2003
1
C.W. Kuo, C.C. Hsiao, C.C. Ho and Y.J. Chan, “Scalable large-signal model
of 0.18 mm CMOS process for rf power predictions”, Solid State Electronics,
vol. 47, pp. 77-81, 2003.
C.C. Ho, C.W. Kuo, C.C. Hsiao and Y.J. Chan, “A 0.18 mm p-MOSFET
2 large-signal RF model and its application on MMIC design,” to be published in
Solid State Electronics, 2003.
3
C.W. Wang, S.C. Yang, C.K. Lin and Y.J. Chan, “A modified scalable
large-signal RF model for quasi-enhancement mode AlGaAs/InGaAs
pHEMTs,” to be published in Solid State Electronics, 2003.
4
C.C. Ho, C.W. Kuo, C.C. Hsiao and Y.J. Chan, “A fully integrated 2.4 GHz
class-E amplifier with a 63% PAE by 0.18 mm CMOS technologies”,
submitted to IEEE J. Solid State Circuits, under revision, 2003.
H.C. Chiu, T.J. Yeh, M.J. Hwu, S.C. Yang and Y.J. Chan, “High performance
5
BCB-bridged AlGaAs/InGaAs power HFETs”, submitted to IEEE Trans.
Electron Devices, under revision, 2003.
S.C. Yang, H.C. Chiu, M.J. Hwu, W.K. Wang, C.K. Lin and Y.J. Chan,
6 “Submicron RIE recessed InGsP/InGaAs doped-channel FETs,” submitted to
IEEE Trans. Electron Devices, under revision, 2003.
M.J. Hwu, H.C. Chiu, Y.J. Chan and L.B. Chang, “Improved gate leakage and
7 microwave performance by inserting a thin praseodymium gate metal in
AlGaAs/InGaAs DCFETs,” submitted to Electronics Lett., 2003.
S.M. Lin, F.H. Hang, C.K. Lin, S.C. Yang and Y.J. Chan, “A Novel 1.55μm
8 Dual-Modes SSO/MSM Photodetector”, submitted to IEEE Photnic Tech. Lett,
2003.
C.C. Ho, C.W. Kuo, C.C. Hsiao and Y.J. Chan, “Enhanced PAE in 1.9 GHz
9 CMOS Class-E Amplifier by Adding a Class-F Driver Stage”, submitted to
IEEE Trans. Microwave Theory Tech, 2003.
C.W. Kuo, C.C. Ho and Y.J. Chan, “The Bandwidth Enhancement Design of
10 CMOS Transimpedance Amplifier by Using Inductive Peaking Technology”,
submitted to IEEE Trans. Circuit and System (I), 2003.
H.C. Chiu, S.C. Yang, C.K. Lin, M.J. Hwu and Y.J. Chan, “0.2 μm gate-length
11 InGaP/InGaAs DCFET for C-band MMIC amplifier application”, submitted to
IEEE Trans. Electron Devices, 2003.
12 M.J. Hwu, H.C. Chiu, S.C. Yang and Y.J. Chan, “A novel double recessed 0.2
um T-gate process for heterostructure InGaP/InGaAs doped-channel FET
fabrication”, submitted to IEEE Electron Device Lett., 2003.
13
C.C. Ho, C.W. Kuo, C.C. Hsiao and Y.J. Chan, “A 2.4 GHz low phase noise
VCO fabricated by 0.18 um pMOS technologies,” submitted to IEEE
Microwave and Wireless Component Lett., 2003.
14
H.C. Chiu, S.C. Yang, C.K. Lin, M.J. Hwu, H.K. Chiou and Y.J. Chan,
“K-band monolithic InGaP/InGaAs DCFET amplifier using BCB coplanar
waveguide technology,” submitted to IEEE Microwave and Wireless
Component Lett., 2003.
M.W. Hsieh, W.K. Wang, C.W. Kuo, H.K. Chiou and Y.J. Chan, “A 5.2 GHz
15 CMOS amplifier with an active gate bias circuit to improve the PAE,”
submitted to IEEE J. Solid State Circuits, 2003.
2002
H.C. Chiu, S.C. Yang and Y.J. Chan, “Improved device linearity of
1 AlGaAs/InGaAs HFETs by a second mesa etching,” IEEE Electron Device Lett.,
vol. 23, pp. 1-3, 2002.
H.C. Chiu, M.J. Hwu, C.S. Yang and Y.J. Chan, “Enhanced power performance
2
of enhancement-mode AlGaAs/InGaAs pHEMTs by using a low-k BCB
passivation layer,” IEEE Electron Device Lett., vol. 23, pp. 243-245, 2002.
3
H.C. Chiu, S.C. Yang and Y.J. Chan, “High power density and large voltage
swing of enhancement-mode AlGaAs/InGaAs pHEMTs for 3.5V L-band
applications,” Jpn. J. Appl. Phys., vol. 41, pp. 2902-2903, 2002.
4
C.K. Lin and Y.J. Chan, “An extended RF non-linear model for power
prediction of AlGaAs/InGaAs pHEMTs,” J. Vac. Sci. Tech., vol. A20, pp.
1048-1051, 2002.
C.W. Kuo, C.C. Hsiao and Y.J. Chan, “2.4 GHz VCO and PA MMICs based on
5
0.25 m CMOS technologies,” J. Vac. Sci. Tech., vol. A20, pp. 1034-1037,
2002.
C.K. Lin, W.K. Wang and Y.J. Chan, “A new empirical large-signal model for
6 enhancement-mode AlGaAs/InGaAs pHEMTs,” Solid State Electronics, vol.
46, pp. 2135-2139, 2002.
C.C. Hsiao, S.C. Yang, C.C. Ho and Y.J. Chan, “Improved quality-factor of 0.18
7 m CMOS active inductor by a feedback resistance design,” IEEE Microwave
and Wireless Component Lett., Dec. 2002.
2001
S.C. Yang, H.C. Chiu, F.T. Chien, Y.J. Chan and J.M. Kuo, “RIE gate-recessed
1
(AlGa)InP/InGaAs double doped-channel FETs using CHF3+BCl3 mixing
plasma,” IEEE Electron Device Lett., vol. 22, pp. 170-172, 2001.
H.C. Chiu, S.C. Yang, F.T. Chien and Y.J. Chan, “High power density and low
2 DC power supply of AlGaAs/InGaAs doped-channel FETs,” Electronics Lett.,
vol. 37, pp. 597-598, 2001.
H.C. Chiu, S.C. Yang, Y.J. Chan and H.H. Lin, “High power InGaP/InGaAs
3 doped-channel heterostructure FETs,” IEICE Trans. Electronics, vol. E84-C. pp.
1312-1317, 2001.
F.T. Chien, H.C. Chiu, S.C. Yang, C.W. Chen, and Y.J. Chan, “Device linearity
4 and gate voltage swing improvement by AlGaAs/InGaAs double doped-channel
design,” IEICE Trans. Electronics, vol. E84-C. pp. 1306-1311, 2001.
5
6
H.C. Chiu, S.C. Yang and Y.J. Chan, “AlGaAs/InGaAs heterostructure
doped-channel FETs exhibiting good electrical performance at high
temperatures,” IEEE Trans. Electron Devices, vol. 48, pp. 2210-2215, 2001.
S.C. Yang, H.C. Chiu, Y.J. Chan, H.H. Lin and J.M. Kuo,
“(AlxGa1-x)0.5In0.5P/InGaAs (x=0, 0.3,1.0) heterostructure doped-channel
FETs for microwave power applications,” IEEE Trans. Electron Devices, vol.
48, pp. 2906-2910, 2001.
C.W. Kuo, C.C. Hsiao and Y.J. Chan, “2 Gbps transimpedance amplifier
7 fabricated by 0.35 mm CMOS technologies,” Electronics Lett., vol. 37, pp.
1158-1160, 2001.
2000
1
P.C. Chen and Y.J. Chan, “Improved microwave performance on
low-resistivity Si substrates by Si ion implantation,” IEEE Microwave Theory
and Tech, vol. 48, pp.1582-1585, 2000.
2
F.T. Chien, S.C. Chiol and Y.J. Chan, “Microwave power performance
comparison between single and dual doped-channel designs in
AlGaAs/InGaAs HFETs,” IEEE Electron Device Lett., vol. 21, pp. 60-62,
2000.
3
F.T. Chien and Y.J. Chan, “Monolithically integrated AlGaAs/InGaAs
doped-channel FETs/MSM-PD photoreceivers,” Microwave and Optical
Technology Lett, vol. 27, pp. 79-80, 2000.
4
Y.H. Lin and Y.J. Chan, “2.4 GHz single-balanced diode mixer fabricated on
Al2O3 substrate by thin-film technology,” Microwave and Optical Technology
Lett., vol. 25, pp. 83-86, 2000.
5
H.C. Chiol, F.T. Chien, S.C. Yang, C.W. Kuo, and Y.J. Chan, “Source and
drain resistances reduced of InGaP/InGaAs doped-channel FETs by a Si
d–doping Schottky layer,” Electronics Lett., vol. 36, pp. 1320-1322, 2000.
6
M.J. Yu, Y.J. Chan, L.H. Lai and J.H. Hong, “Improved microwave
performance of spiral inductors on Si substrates by chemically anodizing a
porous Si layer,” Microwave and Optical Technology Lett., vol. 26, pp.
232-234, 2000.
7
H.C. Chiu, S.C. Yang, Y.J. Chan and J.M. Kuo, “High Schottky barrier of
AlInP/InGaAs doped-channel HFETs with superior microwave power
performance,” Electronics Lett., vol. 36, pp. 1968-1969, 2000.
8
C.C. Hsiao and Y.J. Chan, “A 6.8 GHz monolithic oscillator fabricated by
0.35 um CMOS technologies,” Electronics Lett., vol. 36, pp. 1927-1928, 2000.
1999
H.H. Wu and Y.J. Chan, "High-Q inductors and low-loss band-pass filters on Al2O3
1 substrates by thin-film technology," Microwave and Optical Technology Lett., vol. 20,
pp. 322-326, 1999.
L.S. Lai, H.C. Kao and Y.J. Chan, "InAlGaAs fully quaternary doped-channel FETs
2 recessed by CHF3+BCl3 reactive ion etching," Electronics Lett., vol. 35, pp.1674-1676,
1999.
F.T. Chien and Y.J.Chan, "Improved voltage gain of transimpedance amplifier by
3 AlGaAs/InGaAs doped-channel FETs", IEEE Trans. Electron Devices, vol. 46, pp.
1094-1098, 1999.
4
F.T. Chien and Y.J. Chan, "Characteristics improvement by a double doped-channel
design in AlGaAs/InGaAs HFETs," Electronics Lett., vol. 35, pp. 427-428, 1999.
F.T. Chien and Y.J. Chan, "Bandwidth enhancement of transimpedance amplifier by a
5 capacitive-peaking design, " IEEE Journal of Solid-State Circuits., vol. 34, pp.
1167-1170, 1999.
1998
1 H.C. Kao, L.S. Lai and Y.J. Chan, ”Reactive-ion-etching of CHF3+BCl3 for
ternary InAlAs and InGaAs compounds with various In-contents”, J. Vac. Sci.
Technol(B), vol. 16, pp-253-254, 1998.
C.F. Liao, Y.J. Chan and Y.C. Chiang, “2.4 GHz monolithic microwave mixer
2 with lump balanced circuits”, Microwave and Optical Technology Lett., vol. 17,
pp. 357-359, 1998.
L.S. Lai, Y.J. Chan, J.W. Pan, and J.I. Chyi, “Characteristics of fully quaternary
3 In0.52(Al0.8Ga0.2) 0.48As/In0.53(Al0.2Ga0.8)0.47As heterostructure
doped-channel FET’s“, Electronics Lett., vol. 34, pp. 308-309, 1998.
Y.J. Chan, C.H. Huang, C.C. Wen, and B.K. Liew, ”Characteristics of
4 deep-submicrometer MOSFET and its empirical non-linear RF model ”,IEEE
Microwave Theory and Tech., vol. 46, pp. 611-615, 1998.
5
L.S. Lai and Y.J. Chan, “Selectively dry-etched AlGaAs/InGaAs doped-channel
using CHF3+BCl3 plasma “, to be published in Solid State Electronics, 1998.
F.T. Chien and Y.J. Chan, ”Transimpedance amplifiers fabricated with
6 InAlAs/InGaAs doped-channel heterostructures “, Electronics Lett., vol. 34, pp.
1142-1143, 1998.
Y.C. Chiang, C.C. Lin, and Y.J. Chan, “The design of a narrow band MIC lumped
7 element coupled-resonator bandpass filter “, to be published in Microwave and
Optical Technology Lett., 1998
L.S. Lai, H.C. Kao, and Y.J. Chan, “Characteristics of RIE etching in
8 InAlAs/InGaAs HEMT’s using fluorine and chlorine gas mixtures “ ,J. Vac. Sci.
Technol(B), in revised, 1998.
Y.J. Chan, H.H. Wu, L.H. Laih, and J.W. Hong, “Improved microwave
9 performance of spiral inductors on Si substrates by the insertion of an amorphous Si
layer “,submitted to Electronics Lett., 1998.
L.S. Lai, Y.J. Chan, J.W. Pan and J.I. Chyi,“ Fully quaternary
In0.52(Al1-xGax)0.48As/In0.53(AlxGa1-x) 0.47As(x=0,0.1,0.2) heterostructure
10
doped-channel FET’s on InP substrates “,submitted to IEEE Trans. Electron
Device, 1998
11
C.H. Huang, Y.J.Chan and B.K. Liew, “The large signal RF model of 0.25
micrometer n- and p-MOSFET’s “, submitted to Electronics Lett., 1998.
F.T. Chien and Y.J.Chan, “Improved voltage gain of transimpedance amplifier by
12 AlGaAs/InGaAs doped-channel FETs“, submitted to IEEE Trans. Electron
Devices, 1998.
13 Y.J. Chan and J.W. Huang, “The correlation between high-voltage kink and
substrate current in GaAs MESFET,” submitted to Electronics Lett., 1998.
H.H. Wu and Y.J. Chan, “High-Q inductors and low-loss band-pass filters on
14 Al2O3 substrates by thin-film technology,” submitted to Microwave and Optical
Technology Lett., 1998.
1997
Y.J. Chan, C.S. Wu, C.H. Chen, J.L. Shieh, and J.I. Chyi, “Characteristics of
1 In0.52(AlxGa1-x)0.48As/In0.53Ga0.47As heterojunction and its application on
HEMT’s “, IEEE Trans. Electron Devices, vol.44, pp. 708-714, 1997.
L.S. Lai and Y.J.Chan, “Enhanced breakdown voltage in InP-HEMT’s by using a
2 In0.53(AlxGa1-x)0.47As(x=0.1,0.2) quaternary channel”, Electronics Lett, vol.33,
pp-1739-1740,1997.
1996
Y.J. Chan, C.S. Wu, J.I. Chyi, R.J. Lin, and J.L. Shieh,” GaAs-based
In0.29Al0.71As/In0.3Ga0.7As heterostructure and its application on
1
HEMT’s”, Microwave and Optical Technology Letters, vol. 11, pp.
148-150, 1996.
M.T. Yang and Y.J. Chan,” Device linearity comparisons between
2
doped-channel and modulation-doped designs in pseudomorphic
Al0.3Ga0.7As/In0.2Ga0.8As heterostructures”, IEEE Trans. Electron
Devices, vol. 43, pp.1174-1180, 1996.
Y.J. Chan, C.S. Su and K.T. Sung,” Reactive-ion-etching of WSix in
3 CF4+O2 and the associated damage in GaAs”, J. Vac. Sci. Technol(B), vol.
B14, pp. 2550-2554, 1996.
M.T. Yang, Y.J. Chan, J.L. Shieh, and J.I. Chyi,” The performance
4 enhancement in metamorphic InAlAs/InGaAs doped-channel FET’s on GaAs
substrates”, IEEE Electron Device Lett., vol. 17, pp. 410-412, 1996.
L.W. Ke, Y.J.Chan, and Y.C. Chiang,” Monolithic AlGaAs/InGaAs
5 doped-channel FET microwave switches”, Microwave and Optical Letters,
vol. 13, pp. 47-49, 1996.
1995
1
Y.J. Chan, and M.T. Yang,” Device linearity improvement by
Al0.3Ga0.7As/In0.2Ga0.8As heterostructure doped-channel FET’s”, IEEE
Electron Device Lett, vol. 16, pp. 33-35, 1995.
Y.J. Chan, and M.T. Yang,”AlGaAs/InxGa1-xAs( 0
x
0.25)
2 doped-channel FET’s,” IEEE Trans. Electron Devices, vol. 42, pp. 1745-1749,
1995..
C.S. Wu, Y.J. Chan, J.L. Shieh, and J.I. Chyi,”
3 In0.52(Al0.9Ga0.1)0.48As/In0.53Ga0.47As HEMT for the improved device
reliability”, Electronic Lett, vol. 31, pp. 1105-1106, 1995.
Y.J. Chan, T.J. Yeh and J.M. Kuo,” High temperature performance of
4 GaInP/In0.2Ga0.8As pseudomorphic HEMT’s with WSix gates”, Solid State
Electronics, vol. 38, pp. 457-459, 1995.
C.S.Wu, Y.J. Chan, C.D. Chen, T.M. Chuang, F.Y. Juang, C.C. Chang and J.I.
Chyi,” Double heterostructure pseudomorphic AlGaAs/In0.15Ga0.85As high
5
electron mobility transistor and its short-channel effects”, Solid State
Electronics, vol. 38, pp. 377-381, 1995.
M.T. Yang, Y.J. Chan, C.S. Wu, and J.I. Chyi,” Novel
6 In0.29Al0.71As/In0.3Ga0.7As heterostructure FET’s fabricated on GaAs
substrates”, J. of Chinese Institute of Electrical Eng, vol. 2, pp. 29-36, 1995..
T.H. Gan, Y.J. Chan, and C.S. Wu,” S-band and X-band monolithic microwave
7 amplifier design using pseudomorphic AlGaAs/In0.15Ga0.85As HEMT’s”, J.
Chinese Institute of Electrical Engineering, vol. 2, pp. 299-306, 1995.
C.C.Chu, Y.J.Chan, R.H. Yuang, J.I. Chyi, and C.T. Lee,” Performance
8 enhancement using WSix/ITO electrodes in InGaAs/InAlAs MSM
photodetectors”, Electronics Lett., vol. 31, pp. 1692-1694, 1995.
C.S.Wu, Y.J. Chan, J.L. Shieh, T.H. Gan, and J.I. Chyi,”
9 In0.52Al0.48As/InxGa1-xAs( x=0.53,0.6 ) lattice-matched and strained HEMT’s
on InP substrates”, J. Chinese Institute of Engineers, vol. 18, pp. 707-712, 1995.
1994
M.T. Yang, Y.J.Chan, C.H.Chen, J.I. Chyi, R.M. Lin, and J.L. Shieh,” The
1 characteristics of pseudomorphic AlGaAs/InxGa1-xAs( 0
x
0.25 )
doped-channel FET’s”, J. Appl. Phys, vol. 76, pp. 2494-2498, 1994.
Y.J. Chan, T.J. Yeh, and J.M. Kuo,” GaInP/In0.15Ga0.85As heterostructure
2 pulsed doped-channel FET’s”, Electronics Lett, vol. 30, pp. 1094-1095,
1994.
3 Y.J. Chan, M.T. Yang, T.J. Yeh, and J.I. Chyi,” High uniformity of
AlGaAs/In0.15Ga0.85As doped-channel structure grown by MBE on 3-GaAs
wafer”, J. Electronic Materials, vol. 23, pp. 675-679, 1994.
C.S. Wu, Y.J. Chan, C.D. Chen, T.M. Chuang, F.Y. Juang, C.C. Chang and
J.I. Chyi, “DC and microwave characteristics of pseudomorphic
4
AlGaAs/In0.25Ga0.75As HEMT’s by deep-UV source”, J. of Chinese
Institute of Electrical Eng, vol. 1, pp. 45-50, 1994.
Y.J. Chan and D. Pavlidis,” Low frequency noise and frequency dispersion
5 characteristics of GaInP/GaAs HEMT’s”, IEEE Trans. Electron Devices,
vol. 41, pp. 637-642, 1994.
1993
1
Y.J. Chan and C.H. Chen,” C+Ar co-implanted p-channel GaAs
MESFET’s”, Appl. Phys. Lett. vol. 63, pp. 1092-1094, 1993.
Y.J. Chan, M.T. Yang, J.I. Chyi, J.L. Shieh, and R.M. Lin,” AlGaAs/GaAs
2 heterostructure FET’s grown by molecular beam epitaxy ”, Proceedings of
National Science Council, vol.17, pp. 428-432, 1993.
Y.J. Chan, and M.T. Yang,” Enhancement- and depletion-mode AlGaAs/GaAs
3 HEMT inverter fabricated by selective ion implantation”, Electronics Lett., vol.
29, pp. 2220-2222, 1993.
J.M. Kuo, and Y.J. Chan,” Cryogenic and high temperature operation of
4 AlInP/In0.2Ga0.8As high electron mobility transistors”, J. Vac. Sci. Technol.,
vol. B11, pp. 976-978, 1993.
J.M. Kuo, Y.J. Chan, and D.Pavlidis,” Modulation-doped
5 Al0.52In0.48P/In0.2Ga0.8As FET’s”, Appl. Phys. Lett, vol. 62, pp.
1105-1107, 1993.
1992
Y.J. Chan, and D.Pavlidis,” Single and dual p-doped
1 In0.52Al0.48As/InxGa1-xAs(x=0.53,0.65) FET’s and the role of doping”, IEEE
Trans. Electron Devices, vol. 39, pp.466-472, 1992.
W.Q. Li, Y.J. Chan, and P.K. Bhattacharya, “ Improved performance of highly
2 strained InGaAs/GaAs heterostructure devices grown on patterned GaAs
substrates”, J. Vac. Sci. Technol., B10, PP. 1035-1037, 1992.
1991
Y.J. Chan, and D. Pavlidis,” In0.52Al0.48As/InxGa1-xAs(0.53≦x≦0.7) lattice
1 matched and strained heterostructure insulated-gated FET’s ”, IEEE Trans.
Electron Devices, vol. 38, pp. 1999-2005, 1991.
Y.J. Chan, and D. Pavlidis and G.I. Ng,” The influence of gate-feeder/mesa-edge
2 contacting on sidegating effect in InAlAs/InGaAs heterostructure FET’s”, IEEE
Electron Device Lett., vol. 12, pp.360-362, 1991..
R. Clarke, W. Dos Passos, Y.J. Chan and D.Pavlidis,” Enhanced annealing kinetics
3 in ion-implanted InxAl1-xAs studied by x-ray diffractometry”, Appl. Phys. Lett.,
vol. 58, pp. 2267-2269, 1991.
M. Razeghi, F. Omnes, Ph. Maurel, Y.J. Chan and D. Pavlidis,” GaInP/GaxIn1-xAs
4 lattice-matched(x=1) and strained(x=0.85) 2DEG FET’s”, Semiconed. Sci.
Technol., vol. 6, pp. 103-107, 1991.
1990
Y.J. Chan, D. Pavlidis, M. Razeghi and F. Omnes,
“Ga0.51In0.49P/GaAsHEMT’s exhibiting good electrical performance at
1
cryogenic temperatures“, IEEE Trans. Electron Devices , vol.37, pp. 2141-2147,
1990.
M. Razeghi, F. Omnes, M. Defour, Ph. Maurel, Ph Bove, Y.J. Chan and D.
2
Pavlidis, “The first fabrication of n- and p-type GaInP/Ga(In)As lattice matched
and strained HIGFET structures grown by MOCVD “, Semicond. Sci. Technol.,
vol 5, pp. 274-277, 1990.
Before 1990
G.I. Ng, D.Pavlidis, M. Quellec, Y.J. Chan, M.D. Jaffe and J. Singh, “ Study of the
1 consequence of excess indium in the active channel InGaAs/InAlAs HEMT’s on
device properties”, Appl. Phys. Lett. vol. 52, pp. 728-730, 1989.
2
Y.J. Chan and M.S. Lin, “Rapid thermal annealing of Si implanted GaAs”, J.
Electronic Material vol. 15, pp. 31- 36, 1986.
Y.J. Chan and M.S. Lin, “Deep-level transient spectroscopy study of thermal
3 conversion layer on SI-GsAs grown by LEC method”, J. Appl. Phys., vol. 60, pp.
2184-2186, 1986.
Y.J. Chan and M.S. Lin and T.P. Chen, “Thermal annealing study on GaAs
4 encapsulated by plasma-enhanced chemical-vapor-deposited SiOxNy”, J. Appl.
Phys., vol. 58, pp. 545-549, 1985.