Optical and Electrical Spin Injection in Semiconductor Quantum Dots

Optical and Electrical Spin Injection in Semiconductor Quantum Dots
Xavier MARIE
Laboratory of Physics and Chemistry of Nano-Objects ; INSA-CNRS
135 avenue de Rangueil, 31077 Toulouse cedex 4, France
[email protected]
The manipulation of carrier spins in semiconductor quantum dots (QD) is an important step
towards future spintronic or quantum information processing applications. This approach is attractive
since a long coherence time is expected, as a result of the inhibition of classical spin relaxation
mechanisms : the discrete energy levels in semiconductor quantum dots and the corresponding lack of
energy dispersion lead to a slowdown of the spin relaxation processes compared to bulk or twodimensional structures.
We have studied the spin dynamics of electrons, holes, neutral and charged excitons in
undoped and doped QD by time-resolved photoluminescence1-6 .
We will give a review of our recent experimental results on optical spin injection in
InAs/GaAs quantum dots. The possibility of dynamical polarization of nuclei in InAs QD will be also
discussed 7-9.
Finally we will present results on electrical spin injection in a Spin-LED quantum dots
Device 10.
Paillard et al., Phys. Rev. Lett. 86, 1634-1637 (2001).
Cortez et al, Phys. Rev. Lett. 89, 207401 (2002).
Laurent et al., Phys. Rev. Lett. 94, 147401 (2005)
Braun et al., Phys. Rev. Lett., 94, 116601 (2005)
Senes et al , Phys. Rev. B 71, 115334 (2005)
Laurent et al, Phys. Rev. B 73, 235302 (2006)
Eble et al , Phys. Rev. B 74, R081306 (2006)
Braun et al, Phys. Rev.B 74, 245306 (2006)
Lombez et al, Phys. Rev. B 75, 195314 (2007)
Lombez et al, App. Phys. Lett, 90, 81111(2007)
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