CHAPTER: ION CHANNELING BIBLIOGRAPHY
This chapter lists approximately 230 references (chronologically) that are related
to the channeling of ions in crystals, or channeled ion implantation, published
between about 1962 and 1986, or about the first 25 years of ion implantation
technology. In most cases the titles are listed as an aid to the reader who
wishes to search for specific subjects or issues. This is not intended to be a
complete listing, just the ones that I have assembled and used for many years. I
have certainly omitted some relevant papers/books, and I apologize to the
affected authors. The large number of references found here attests to the
interest in and significance of ion channeling in crystals.
PAPERS THAT ARE for BACKGROUND or ARE CLASSICS:
1947 G. Moliere, Z. Naturforch. 29, 133 (1947)
1948 N. Bohr, Kgl. Danske Videnskab. Selskab. Mat-fys. Medd. 18 No 8 (1948)
~1955 W. Whaling, "The energy loss of charged particles in matter," Handbuch der Physik
34, 193-218
1957 O.B. Firsov, " Calculation of the interaction potential of atoms," Sov. Phys.-JETP 6(33),
534-37 (1958)
1958 O.B. Firsov, "A qualitative interpretation of the mean electron excitation energy in
atomic collisions," Sov.Phys.-JETP 36(9), 1076-80 (1959)
1961 J. Lindhard and M. Scharff, "Energy dissipation by ions in the keV region," Phys. Rev.
124, 128-31 (1961)
1964 J. Lindhard, "The motion of swift charged particles, as influenced by strings of atoms in
crystals," Phys. Lett. 12, 126-28 (1964)
1969 J. Lindhard, "Slowing-down of ions," Proc. Roy. Soc. A311, 11-19 (1969)
REVIEWS:
R.S. Nelson & M.W.Thompson, "The penetration of energetic ions through the open channels
in a crystal," Phil Mag 8, 1677-89 (1963)
M. W. Thompson, "The channeling of particles in crystals," Contemp. Phys. 9
375-98 (1968)
W. Brandt, "Channeling in crystals," Scientific American 218, 91-98 (1968)
D.S. Gemmell, "Channeling and related effects in the motion of charged particles
through crystals," Rev. Mod. Phys. 46, 129-227 (1974)
J.M. Poate, "Energy loss of channeled ions: Low velocity ions," in Channeling,
Ed. D. V. Morgan [Wiley, 1973]
REGULAR PAPERS
1962 Dec 5 M.T. Robinson & O.S. Oen, "The channeling of energetic atoms in crystal
lattices," Appl. Phys. Lett. 2, 30-32 (1963)
1963 Feb 22 J.A. Davies, F. Brown, & M. McCargo, "Range of 133Xe and 41Ar ions of
kiloelectron volt energies in aluminum," Can. J. Phys. 41, 829-43 (1963)
1963 Feb 22 F. Brown & J.A. Davies, "The effect of energy and integrated flux on the
retention and range of inert gas ions injected at keV energies in metals," Can .J. Phys.
41, 844-57 (1963)
1963 Mar 20 C. Lehmann & G. Leibfried, "Long range channeling effects in irradiated
crystals," J. Appl. Phys. 34, 2821-36 (1963)
1963 Mar 25 G.R. Piercy, F. Brown, J.A. Davies, & M. McCargo, "Experimental evidence for
the increase of heavy ion ranges by channeling in crystalline structures," Phys. Rev.
Lett. 10, 399-400 (1963)
1963 Apr 16 M. McCargo, J.A. Davies, & F. Brown, "Range of 133Xe and 41Ar ions of keV
energies in tungsten," Can. J. Phys. 41, 1231-44 (1963)
1963 June 6 J.H. Ormrod & H.E. Duckworth, "Stopping cross sections in carbon for lowenergy atoms with Z < 12," Can. J. Phys. 41, 1424-42 (1963)
1963 July 24 M.W. Thompson, "A direct measurement of the focusing energy for <110>
collision sequences in gold," Phys Lett 6, 24-26 (1963)
1963 July 29 M.T. Robinson & O.S. Oen, "Computer studies of the slowing down of
energetic atoms in crystals," Phys Rev 132, 2385-99 (1963)
1963 Aug 22 P. Sigmund, "Effect of channeling on displacement cascade theory," Phys. Lett.
6, 251-53 (1963)
1964 Jan 31 C. Erginsoy, "Anomalous penetration of rare gas atoms in lattice channels,"
Phys. Rev. Lett. 12, 366-67 (1964)
1964 Feb 7 B. Domeij, F. Brown, J.A. Davies, G.R. Piercy, & E.V. Kornelsen, "Anomalous
penetration of heavy ions of keV energies in monocrystalline tungsten," Phys. Rev.
Lett. 12, 363-66 (1964)
1964 Mar 2 J.A. Davies, G.C. Ball, F. Brown, & B. Domeij, "Range of energetic 125Xe ions in
monocrystalline silicon," Can. J. Phys. 42, 1070-80 (1964)
1964 Mar 18 G.R. Piercy, M. McCargo, F. Brown, & J.A. Davies, "Experimental evidence for
the channeling of heavy ions in monocrystalline aluminum," Can. J. Phys. 42, 111634 (1964)
1964 May 11 B. Domeij, F. Brown, J.A. Davies, & M. McCargo, "Ranges of heavy ions in
amorphous oxides," Can. J. Phys. 42, 1624-34 (1965)
1964 June 1 E.V. Kornelsen, F. Brown, J.A. Davies, B. Domeij, & G.R. Piercy, "Penetration
of heavy ions of keV energies into monocrystalline tungsten," Phys. Rev. 136, A84958 (1964)
1964 Aug 26 E. Bogh, J.A. Davies, & K.O. Nielsen, "Experimental evidence for the extinction
of (p, ) yields in single crystals," Phys. Lett. 12, 129-30 (1964)
1964 Sept 17 M.W. Thompson, "Effect of proton channeling at 2.8 MeV on the
65Cu(p,n)65Zn reaction rate in a single crystal of Cu," Phys. Rev. Lett. 13, 756-60
(1964)
1964 Nov 9 J.H. Ormrod, J.R. Macdonald, & H.E. Duckworth, "Some low-energy atomic
stopping cross sections," Can. J. Phys. 43, 275 (1965)
1964 Nov 23 W. Brandt, J.M. Kahn, D. Potter, R.D. Worley, & H.P. Smith, "Effect of
channeling of low-energy protons on the characteristic x-ray production in single
crystals," Phys. Rev. Lett. 14, 42-44 (1965)
1964 Dec 16 B. Domeij & E. Bjorkqvist, "Anisotropic emission of - particles from a
monocrystalline source," Phys. Lett. 14, 127-28 (1965)
1964 G. Dearnaley, "The channeling of ions through detectors," IEEE Trans. NS11, 249-53
(1964)
1965 Jan 21 G.C. Ball & F. Brown, "The ranges of 133Xe and 134Cs ions in tungsten single
crystals and tungsten oxide at energies of 40 and 125 keV," Can. J. Phys. 43, 676-83
1965)
1965 Feb 4 C. Erginsoy, G.H. Vineyard, & A. Shimizu, "Dynamics of radiation damage in a
body-centered cubic lattice II: Higher energies," Phys. Rev. 139, A118-25 (1965)
1965 Apr 1 A.R. Sattler & G. Dearnaley, "Anomalous energy losses of protons channeled in
single crystal germanium," Phys. Rev. Lett. 15, 59-62 (1965)
1965 Apr 26 D.S. Gemmell & R.E. Holland, "Blocking effects in the emergence of charged
particles from single crystals," Phys. Rev. Lett. 14, 945-48 (1965)
1965 June 4 S. Datz, T.S. Noggle, & C.D. Moak, "Anisotropic energy losses in a facecentered cubic crystal for high-energy 79Br and 127I ions," Phys. Rev. Lett. 15, 254-57
(1965)
1965 June 22 W.M. Gibson, C. Erginsoy, H.E. Wegner, & B.R. Appleton, "Direction and
energy distribution of charged particles transmitted through single crystals," Phys. Rev.
Lett. 15, 357-60 (1965)
1965 June 22 C. Erginsoy, "Anisotropic effects in interactions of energetic charged particles
in a crystal lattice," Phys. Rev. Lett. 15, 360-64 (1965)
1965 July 8 P.M. Portner & R.B. Moore, "A precise measurement of the range of 100-MeV
protons in aluminum," Can. J. Phys. 43, 1904 (1965)
1965 Sept 1 C.J. Andreen, R.L. Hines, W. Morris, & D. Weber, "Channeling of 13-keV D+
ions in gold crystals," Phys. Lett. 19, 116-18 (1965)
1965 Sept 23 B.R. Appleton, C. Erginsoy, H.E. Wegner, & W.M. Gibson, "Axial and planar
effects in the energy loss of protons in silicon single crystals," Phys. Lett. 19, 185-86
(1965)
1965 Dec 2 Hj. Matzke & J.L. Whitton, "Ion-bombardment-induced radiation damage in some
ceramics and ionic crystals," Can. J. Phys. 44, 995 (1965)
1965 J.O. McCaldin, "Ion beams and solid state physics," Nucl. Instrum. Meth. 38, 153-64
(1965)
1965 B. Domeij, "Crystal lattice effects in the emission of charged particles from
monocrystalline sources," Nucl. Instrum. Meth. 38, 207-09 (1965)
1965 J.U. Andersen, J.A. Davies, K.O. Nielsen, & S.L. Andersen, "An experimental study of
the orientation dependence of (p, ) yields in monocrystalline aluminum," Nucl.
Instrum. Meth. 38, 210-15 (1965)
1965 E. Bogh & E. Uggerhoj, "Experimental investigation of orientation dependence of
Rutherford scattering yield in single crystals," Nucl. Instrum. Meth. 38, 216-20 (1965)
1965 S. Datz, T.S. Noggle, & C.D. Moak, "Channeling effects on the energy loss of high
energy (20-80-MeV) 79Br and 127I ions in gold," Nucl Instrum Meth 38, 221-30 (1965)
1965 B.W. Farmery, R.S. Nelson, R. Sizmann, & M.W .Thompson, "The channeling of 2.5MeV protons in Cu and some effects of temperature and radiation damage," Nucl.
Instrum. Meth. 38, 231-37 (1965)
1965 H.H. Andersen & P. Sigmund, "Depth distributions in channeling experiments," Nucl.
Instrum. Meth. 38, 238-40 (1965)
1965 H. Lutz, R. Schuckert, & R. Sizmann, "The ranges of fast heavy particles in solids.
Some experimental and theoretical results." Nucl. Instrum. Meth. 38, 241-44 (1965)
1965 J.A. Davies, L. Eriksson, & P. Jersersgaard, "The range of heavy ions (0.1-1.5 MeV) in
monocrystalline tungsten," Nucl. Instrum. Meth. 38, 245-48 (1965)
1965 F. Brown, G.C.Ball, D.A. Channing, L.M. Howe, J.P.S. Pringle, & J.L. Whitton,
"Ranges of heavy ions," Nucl. Instrum. Meth. 38, 249-53 (1965)
1965 B. Fastrup, P. Hvelplund, & C. Sautter, Nucl. Instrum. Meth. 38, 260- (1965); & Kgl.
Danske Vidensk. Selskab. Mat.-fys. Medd. 35, No 10 (1966)
1965 S. Datz, T.S. Noggle, & C.D. Moak, "Channeling effects on the energy loss of high
energy (20-80 MeV) 79Br and 127I ions in gold," Nucl Instrum Meth 38, 24-30 (1965)
1966 Jan 10 R.E. DeWames, W.F. Karl, & G.W. Lehman, "Anomalous particle penetration in
perfect crystals," Phys. Rev. 148, 181-85 (1966)
1966 Feb 3 P.V. Pavlov, D.I. Tetel'baum, E. . Zorin, & V. . Alekseev, "Distribution of
implanted atoms and radiation effects in the ion bombardment of silicon (Monte Carlo
calculation method)," Sov. Phys.-Solid State 8, 2141-46 (1967)
1966 July 11 G.F. Hamilton & A.R. Quinton, "The observation of proton channeling in thin
mica," Phys. Lett. 22, 312-13 (1966)
1966 Aug 13 R.S. Nelson, D.J. Mazey, M.D. Matthews, & D.F. Holloway, "The formation of
channeling patterns on the surface of ion bombarded silicon," Phys. Lett. 23, 18-19
(1966)
1966 Aug 23 J.L. Whitton & Hj. Matzke, "The effects of crystallinity and bombardment dose
on the penetration of 40-keV Xe ions in ionic crystals and ceramics," Can. J. Phys. 44,
2905-14 (1966)
1966 Sept 12 D.E. Harrison & D.S. Greiling, "Computer studies of xenon ion ranges in a
finite temperature tungsten lattice," J. Appl. Phys. 38, 3200-11 (1967)
1966 Oct 24 F.H. Eisen, "Channeling of 375-keV protons through silicon," Phys. Lett. 23,
401-02 (1966)
1966 Apr 7 J.A. Davies & P. Jespersgaard, "Anomalous penetration of xenon in tungsten
crystals - a dissusion effect," Can. J. Phys. 44, 1631-38 (1966)
1966 H.H. Andersen & P. Sigmund, Kgl. Danske Videnskab. Selskab. Mat.-fys. Medd. 34
No. 15 (1966)
1966 May 24 E. Bogh & E. Uggerhoj, "Orientation dependence of Rutherford backscattering
yields in single crystals," Phys. Lett. 17, 116-18 (1966)
1966 E. Bogh, "The string effect and its use in solid state investigations," presented at the
Cairo Solid State Conference, Interaction of radiation with solids [Plenum,1966]
1966 C. Erginsoy, "Channeling and related effects with passage of charged particles through
crystal lattices," Cairo Solid State Conf. Interaction of Radiation with Solids [Plenum,
1966]
1966 Oct 11 L.T. Chadderton, "Wave/particle duality in proton channeling in crystals," Phys.
Lett. 23, 303-04 (1966)
1967 Jan 12 R.S. Nelson, "Proton scattering microscopy," Phil. Mag. 15, 136-54 or 845-53
(1967)
1967 Feb 2 J.L. Whitton, "Channeling in gold," Can. J. Phys. 45, 1947-57 (1967)
1967 Mar 2 R.S. Nelson & D.J. Mazey, "The influence of channeling on radiation damage
produced in silicon during ion bombardment," J. Matl. Sci. 2, 211-16 (1967)
1967 Mar 10 D.K. Brice, "Channeling of 1H+, 2D+, and 3He+ ions in germanium: a
diffraction calculation," Phys. Rev. 165, 475-84 (1967)
1967 Mar 31 B.R. Appleton, C. Erginsoy, & W.M. Gibson, "Channeling effects in the energy
loss of 3-11 MeV protons in silicon and germanium single crystals," Phys. Rev. 161,
330-49 (1967)
1967 Mar 31 A.R. Sattler & G. Dearnaley, "Channeling in diamond-type and zinc-blende
lattices:Comparative effects in channeling of protons and deuterons in Ge, GaAs, and
Si," Phys. Rev. 161, 244-52 (1967)
1967 Apr 28 L. Eriksson, "Range measurements in oriented tungsten single crystals (0.11.0MeV). II. A detailed study of the mchanneling of 42K ions," Phys. Rev. 161, 235-44
(1967)
1967 June 29 J.A. Davies, J. Denhartog, & J.L. Whitton, "Channeling of MeV projectiles in
tungsten and silicon," Phys. Rev. 165, 345-56 (1968)
1967 Sept 1 J.A.Davies, J. Denhartog, L. Eriksson, & J.W. Mayer, Can. J. Phys. 45, 4053-71
(1967)
1967 Sept 18 E.S. Mashkova & V.A. Molchanov, "Some regularities of ion-beam interactions
with semiconductors," Can. J. Phys. 46, 713 (1968)
1967 Sept 25 J.H. Barrett, "Location of shoulders in channeling phenomena," Phys. Rev.
166, 219-21 (1968)
1967 Oct 23 J.W. Mayer, J.A. Davies, & L. Eriksson, Appl. Phys.Lett. 11, 365-67 (1967)
1967 Oct 24 D.V. Morgan & D. van Vliet, "Computer studies of fast ion trajectories in
crystals," Can. J. Phys. 46, 503-16 (1968)
1967 Oct 26 I. McC. Torrens & L.T. Chadderton, "Computer studies of channeling of ions in
alkali halide lattices," Can. J. Phys. 46, 1303-09 (1968)
1967 Oct 30 F.H. Eisen, "Channeling of medium mass ions through silicon," Can. J. Phys.
46, 561 (1968)
1967 Oct 30 D. Onderdelinden, "Single-crystal sputtering including the channeling
phenomena," Can. J. Phys. 46, 739-45 (1968)
1967 Nov 2 W. Brandt, R.Dobrin, H. Jack, Jr, R. Laubert, & S. Roth, "Channeling studies
through characteristic radiations," Can. J. Phys. 46, 537 (1968)
1967 Nov 2 W. J. Kleinfelder, W.S. Johnson, & J.F. Gibbons, "Impurity distribution profiles in
ion-implanted silicon," Can. J. Phys. 46, 597 (1968)
1967 Nov 3 G. Dearnaley, J.H. Freeman, J.H. Gard, & M.A .Wilkins, "Implantation profiles of
32P
channeled into silicon crystals," Can. J. Phys. 46, 587-95 (1968)
1967 Nov 3 R.S. Nelson & D.J. Mazey, "The influence of temperature and channeling on
ion-bombardment damage in Si," Can. J. Phys. 46, 689 (1968)
1967 Nov 3 R.S. Nelson & R. von Jan, "The role of focusing collisions in sputtering," Can. J.
Phys. 46, 747 (1968)
1967 Nov 3 V.E. Yurasova, V.I.Shulga, & D.S. Karpuzov, "Ion reflection from a single
crystal," Can. J. Phys. 46, 759-72 (1968)
1967 Nov 8 1967 W.M. Gibson, F.W. Martin, R. Stensgaard, F. Palmgren-Jensen, N.I.
Meyer, G. Galster, A. Johansen, & J.S. Olsen, "Electrical and physical measurements
on silicon implanted with channeled and nonchanneled dopant ions," Can. J.Phys.
46, 675-88 (1968) and the Grenoble Conf. 1967 Nov 8 P Glotin, "Influence of
temperature on phosphorus ion behavior during silicon bombardment," Can. J. Phys.
46, 705-12 (1968)
1967 Nov 10 J.U. Andersen & E. Uggerhoj, "Investigation of the energy and temperature
dependence of the string effect," Can. J. Phys. 46, 517 (1968)
1967 Nov 22 J.A.avies, L. Eriksson, & J.L. Whitton, "Range measurements in oriented
tungsten single crystals. III. The influence of temperature on the maximum range,"
Can. J. Phys. 46, 573-79 (1968)
1967 Nov 22 J.L. Whitton, "The depth distribution of 40-keV 133Xe ions in various single
crystals," Can. J. Phys. 46, 581-86 (1968)
1967 Nov 22 J.W. Mayer, L. Eriksson, S.T. Picraux, & J.A. Davies, Can. J. Phys. 46, 663-73
(1968)
1967 Dec 4 W. M. Gibson, J. B.Rasmussen, P. Ambrosius-Olesen, & C.J. Andreen, "Charged
-particle energy loss in thin gold crystals," Can. J. Phys. 46, 551-60 (1968)
1967 Dec 22 E.T. Shipatov, "Channeling of high energy protons in some single crystals,"
Sov. Phys.-Solid State 10, 2132-37 (1969)
1967 J.U. Andersen, Kgl. Danske Videnskab.Selskab. Mat.-fys. Medd. 36 No. 7 (1967)
1967 Sept 1 J.W. Mayer, O.J. Marsh, G.A. Shifrin, & R. Baron,"Ion implantation of silicon II
Electrical evaluation using Hall-effect measurements," Can. J. Phys. 45, 4073-89
(1967)
1968 Jan 19 E. Bogh, "Defect studies in crystals by means of channeling," (RBS) Can. J.
Phys. 46, 653-62 (1968)
1968 Apr 18 F. Brown, D.A. Marsden, & R.D. Werner, "Use of blocking in crystals to study
the lifetime of fission of 238U by 12-MeV protons," Phys. Rev. Lett. 20, 1449 (1968)
[12-MeV protons ? fission, not implantation]
1968 L. Eriksson, J.A. Davies, & J.W. Mayer, "The use of channeling to investigate galliumimplanted silicon," Radiation Effects in Semiconductors, [Plenum, 1968] pp. 398405
1968 June 24 I. Bergstrom, K. Bjorkqvist, B. Domeij, G. Fladda, & S. Andersen, "Critical
angles for channeling of low energy ions in tungsten," Can. J. Phys. 46, 2679-82
(1968)
1968 Nov 16 D. Blanchin, J.-C.Poizat, J. Remillieux, & A. Sarazin, "Experimental
determination of the energy loss of protons channeled through an aluminum single
crystal," Nucl. Instrum. Meth. 70, 98-102 (1969)
1968 Nov 25 S.T. Picraux, J.A. Davies, L.Eriksson, N.G.E. Johansson, & J.W. Mayer,
"Channeling studies in diamond-type lattices," Phys. Rev. 180, 873-82 (1969)
1969 Jan 8 R.S. Nelson, "Periodic variations in the Z1 dependence of interatomic potential
revealed by a channeling technique," Phys. Lett. 28A, 676-77 (1969)
1969 May 22 S.T. Picraux & J.U. Andersen, "Measurements and calculations of critical
angles for planar channeling," Phys. Rev. 186, 267-72 (1969)
1969 Aug 29 L.C. Feldman & B.R. Appleton, "Unidirectional channeling and blocking: a new
technique for defect studies," Appl. Phys. Lett. 15, 305-07 (1969)
1969 Sept 3 J. Bottiger & F. Bason, "Energy loss of heavy ions along low-index directions in
gold single crystals," Radiat. Effects. 2, 105-10 (1969)
1969 S Datz, C.D. Moak, B.R. Appleton, M.T. Robinson, & O.S. Oen, "Energy dependence
of channeled ion energy loss spectra," Atomic Collisions in Solids 1969, p. 374
1969 G.J. Clark, D.V.Morgan, & J.M. Poate, "Energy loss of channeled protons in the MeV
region," Atomic Collisions in Solids 1969, p. 388
1969 B.R. Appleton & L.C. Feldman, "Unidirectional channeling and blocking," Atomic
Collisions in Solids 1969, p. 417
1969 D.M. Morgan & D. van Vliet, "Computer simulation applied to channeling," Atomic
Collisions in Solids 1969,"
1969 Yu.V. Martynenko, "Some aspects of the theory of ion interaction with crystal
channeling," Proc 3rd Atomic Collisions in Solids Conf, 400-16 [North Holland,
1969]
1969 G. Dearnaley, "The range and energy loss of implanted ions." Proc. Roy. Soc. A311,
21-33 (1869)
1969 G. Dearnaley, M.A. Wilkins, P.D. Goode, J.H. Freeman, & G.A. Gard, "The range
distributions of radioactive ions implanted into silicon crystals," Proc. 3rd Atomic
Collisions in Solids Conf, 633-56 [North Holland, 1969]
1970 Nov 4 D.M. Morgan & D. van Vliet, "Critical approach distances and critical angles for
channeling," Radiat. Effects 8, 51-61 (1970)
1970 Dec 24 R. A. Moline, "Ion-implanted phosphorus in silicon: profiles using C-V analysis,"
J. Appl. Phys. 42, 3553-58 (1971)
1970 P.M. Goode, M.A. Wilkins, & G. Dearnaley, "The electrical activity of phosphorus
channeled in silicon," Radiat. Effects 6, 237-45 (1970). P <110> Si. 40-400 keV. See
Fig. 9. 700°C annealing. 100% activity. range Rc or Rmax vs E in <110> &
<111> varies as E1/2.
1970 J.M. Shannon, R.A. Ford, & G.A. Gard, "Annealing characteristics of higly doped ion
implanted phosphorus layers in silicon," Radiat. Effects 6, 217-21 (1970). 450°C vs
RT implantation in <110> Si of P of 40 & 100 keV  > 1019 cm-3 for 450°C anneal
vs <1016 cm-3 for RT.
1970 I.G. Massa & G.J. Clark, "Computer simulated flux measurements for ions channeled in
diamond structure lattices," 1970 Reading Conf. 207-11 (1970)
1971 Aug 5 V.G.K. Reddi & J.D. Sansbury, "Channeling of phosphorus ions in silicon," Appl
Phys. Lett. 20, 30-31 (1972)
1971 R.A. Moline & G.W. Reutlinger, "Phosphorus channeled in silicon: profiles and
electrical activity," Proc. 2nd Internat. Conf. on Ion Implantation, Ed. I. Ruge &
J. Graul, [Springer Verlag, 1971] p. 58-69
1971 T.E. Seidel, "Distribution of boron implanted in silicon," Proc. 2nd Internat.Conf. on
Ion mplantation, Ed. I. Ruge & J. Graul, [Springer Verlag, 1971] p. 47-57
1971 J.L. Whitton & G.R. Bellavance, "Ion implantation of sulfur into GaAs, GaP, & Ge
monocrystals," Radiat. Effects 9, 127-31 (1971)
1972 May 23 Y.H. Ohtsuki & M. Kitagawa, ""Abnormal" stopping power for low velocity ion
channeling," Phys. Lett. 40A, 313 (1972)
1972 Dec 6 D.K. Brice, "Application of a stopping power formula to channeled ions," Radiat.
Effects 18, 13-16 (1973)
1972 F.G.K.Reddi & A.Y.C. Yu, "Ion implantation for silicon device fabrication," Solid State
Technol., Oct p. 35-41
1972 V.A. Eltekov, D.S. Karputzov, Yu.V. Martynenko, E.A.Rubakha, V.A. Simon, E.
Yurasova, "Computer studies of boron ion channeling in silicon single crystals,"
Radiat. Effects 13, 237-42 (1972) or Proc. 4th Internat Conf. on Atomic Collisions
in Solids, Gausdal, Norway, Sept. 1971, Atomic Collisions in Solids IV [Gordon and
Breach, 1972]
1972 U.A. Arifov, D.D. Gruich, G.E. Ermakov, & E. Khalmirzayev, "Channeling of low energy
ions on single crystal surfaces," Radiat. Effects 12, 181-82 (1972)
1972 V.V. Beloshitsky, M.A. Kumakhov, and V.A. Muralev, "Multiple scattering of channeled
ions in crystals," Radiat Effects 13, 9-22 (1972)
1972 E.S. Mashkova and V.A. Molchanov, " Correlated atomic collision sequences at solid
surfaces," Radiat. Effects 13, 183-90 (1972)
1972 P. V. Pavlov, E. I. Zorin, D. I. Telel'baum, A. S. Baranova, & V. K. Vasil'ev, "The
influence of channeling and anomalous diffusion on the profiles of implanted
phosphorus and boron atoms in silicon," Radiat. Effects 13, 153-55 (1972)
1972 A.P. Pathak and M. Yussouff, "Channeling of charged particles in perfect crystals,"
Radiat. Effects 16, 1-6 (1972)
1973 Jan 3 M.R. Altman, L.C. Feldman, & W.M. Gibson, "Channeling of 5-MeV protons from
planar channels in silicon and its temperature dependence," Radiat. Effects 18, 17180 (1973)
1973 Jan 8 F.G.K. Reddi & J.D. Sansbury, "Channeling and dechanneling of ion-implanted
phosphorus in silicon," J. Appl. Phys. 44, 2957-63 (1973)
1973 W.F. van der Weg, H.E. Roosendaal, & W.H. Kool, "Radiat. Effects 17, 91-97 (1973)
1973 M. Bernheim, "Influence of channeling on secondary ion emission," Radiat. Effects 18,
231-34 (1973)
1974 Aug 8 K. Morita & R. Sizmann, "Dechanneling by interstitial atoms," Radiat. Effects 24,
281-85 (1975)
1974 Dec 20 V. I. Shulga, "Ion beam focusing by the atomic chains of a crystal lattice,"
Radiat. Effects 26, 61-65 (1975)
1974 F. Cembali, K. Galloni, R. Lottie, & F. Zignani, "Influence of annealing and radiation
damage on electrical characteristics," Proc. 4th Internat. Ion Implantation Conf.
[Plenum, 1974]
1975 Jan 6 M.A. Kumakhov, "the theory of channeling at small depths." Radiat. Effects 26,
43-48 (1975)
1975 Jan 23 F. Cembali, R. Galloni, and F. Zignani, "Electrical activation processes of P +ions
channeled along the [110] axis of Si: Affect of annealing on carriers profiles shape,"
Radiat. Effects 26, 161-71 (1975)
1975 Jan 29 H.J. Pabst, "On transverse plane focusing in channeling," Radiat. Effects 25,
207-08 (1975)
1975 Mar 21 N. Matsunami & N. Itoh, "Empirical determination of the random fraction in
disordered channel," Radiat. Effects 26, 173-76 (1975)
1975 Apr 28 U. Bill, R. Sizmann, C. Varelas, & K.E. Rehm, "Transition of axial to planar
channeling," Radiat. Effects 27, 59-66 (1975)
1975 May 2 Yu. V. Bulgakov & V. I.Shulga, "Transparency oscillations of a silicon single
crystal in passing from axial to planar channeling," Radiat. Effects 28, 15-21 (1976)
1975 May 26 T. Waho & Y.H. Ohtsuki, "The diffusion of channeled beams due to deviations
from the continuum model," Radiat. Effects 27, 151-53 (1976)
1975 June 13 J.D. Melvin & T.A. Tombrello, "Energy loss of low energy protons channeled in
silicon crystals," Radiat. Effects 26, 113-26 (1975)
1975 Sept 22 E.S. Mashkova, V.A. Molchanov, & T.M. Serdobol'syaya, "Experimental study
of focusing of ion scattered by crystals," Radiat. Effects 28, 241-43, (1976)
1975 Nov 10 M.A. Kumakhov & R. Wedell, "Theory of channeling at small depths II, "Radiat.
Effects 30, 1-10 (1976)
1975 Dec 15 H. Grahmann, A. Feuerstein, & S. Kalbitzer, "Critical channeling angles of low
energy ions in silicon," Radiat. Effects 29, 117-19 (1976)
1975 F. Cembali, R. Galloni, & F. Zignani, "Electrical activation processes of P+ ions
channeled along the <110> axis of silicon: effect of annealing on carrier profile
shape," Radiat. Effects 26, 161-71 (1975)
1976 June 8 A. Pathak, "Interatomic potentials and channeling," Radiat. Effects 30, 193-97
(1976)
1977 July 28 V.V. Beloshitsky & M.A. Kumakhov, "A theory of energy loss of channeled
protons," Radiat. Effects 35, 209 (1978)
1977 Aug 4 A. Carnera, G. della Mea, A.V. Drigo, S.L. Riasso, & P. Mazzoldi, "Channeling in
diatomic crystals," Radiat. Effects 35, 201-08 (1978) He ions in Al2O3.
1977 Aug 18 J.M. Lombaard & O. Meyer, "Channeling studies in carbon implanted NbC
single crystals," Radiat. Effects 36, 83-89 (1978)
1977 Aug 26 H. Nishi, T. Inada, T.Sakurai, T. Kaneda, T. Hisatsuga, & T. Furuya, "Uniform
doping of channeled ion implantation," J. Appl. Phys. 49, 608-13 (1978)
1977 Nov 11 O.N. Jarvis, A.C. Sherwood, C. Whitehead, & M W Lucas, "The ionization
energy for 160-MeV alpha particles channeled in Si," Radiat. Effects 36, 215-18
(1978)
1977 Dec 1 T. Furuya, H. Nishi, T. Inada, & T.Sakurai, "Channeled ion implantation of group
III and group V ions into silicon," J. Appl. Phys. 49, 3918-21 (1978)
1977 M. Huez, F. Capellani and G. Restelli, "Channeling effect measurements of arsenic
implants in silicon," Radiat. Effects 32, 147-54 (1977)
1978 Feb 20 A. Goetzberger, C.R. Fritzsche, & R. Diehl, "Superchanneling of accelerated
ions through crystals with large channels," J. Appl.Phys. 49, 4956-57 (1978)
1978 May 23 A. Markovich, G. Bahir, T. Bernstein, & R. Kalish, "A method for measuring
stopping powers of channeled ions: boron in silicon," Radiat. Effects 39, 65-70 (1978)
1978 Oct 16 I.N. Evdokimov, J.A. van den Berg, & D.G. Armour, "Proper surface channeling
of low energy argon ions incident on a nickel (110) crystal," Radiat. Effects 41, 33-41
(1979)
1978 Nov 14 M.A. Kumakhov, E. Kuehrt, & R. Wedell, "The theory of channeling at small
depths. III," Radiat. Effects 41, 1-5 (1979)
1978 Dec 15 S. Steenstrup, "The effect of screw dislocations on the energy loss of
channeled ions," Radiat. Effects 37, 51-57 1978)
1978 J.A. Ellison & S.T. Picraux, "Statistical equilibrium spatial density in planar channeling,"
Nucl. Instrum. Meth. 149, 429 (1978)
1978 J.G. Brennan, D.J. Land, M.D. Brown, and D.G. Simons, "Theoretical interpretations of
the energy dependence of electronic stopping power," Nucl. Instrum. Meth. 149, 14348 (1978)
1979 Jan 18 I.N. Evdokimov, R. Webb, D.G. Armour, D.S. Karpuzov, "Simplified models for
surface hyperchanneling, "Radiat. Effects 42, 83-92 (1979)
1979 Mar 23 D.V. Morgan, "A simple model for planar channeling calculations," Radiat.
Effects Lett. 43, 97-100 (1979)
1979 Aug 15 I. Reid, M.W. Thompson, & B.W. Farmery, "Atomic collision phenomena in
sputtering," Radiat. Effects 46, 163-66 (1980)
1979 Sept 13, "J. Comas & R.G. Wilson, "Channeling and random equivalent depth
distributions of 150-keV Li, Be, and B implanted in silicon," J. Appl.Phys. 51, 36973701 (1980)
1979 Oct 4 K. Morita, "A computer simulation of the surface channeling of MeV heavy
charged particles," Radiat. Effects 52, 235-46 (1980)
1979 Nov 7 T.E. Seidel, "Channeling of implanted phosphorus through polycrystalline
silicon," Appl. Phys. Lett. 36, 447-49 (1980)
1979 Nov 9 N. Matsunami & L. M. Howe, "A diffusion calculation of axial channeling in Si
and Ge," Radiat. Effects 51, 111-26 (1980)
1979 Nov 26 V.A. Khodyrev, E.I. Sirotinin, & F. Tulinov, "Energy loss of channeled protons,"
Radiat.Effects 51, 203-08 (1980)
1980 Mar 12 R. Kauffmann & O. Meyer, "Computer simulation of channeling measurements
in carbon-implanted NbC single crystal," Radiat .Effects 52, 53-60 (1980)
1980 Sept 26 S. Steenstrup & A.P. Pathak, "Energy loss spectra in planar channeling,"
Radiat. Effects 55, 17-22 (1981)
1980 Dec 12 V.V. Beloshitsky & M.A. Kumakhov, "Theory of axial channeling of negative
particles," Radiat. Effects 58, 41-45 (1981)
1980 Dec 23 S.D. Mukherjee & M.W. Thompson, "Transverse plane trajectory focusing in
axial channeling: Theory and comparisons with computer simulations," Radiat Effects
55, 223-34 (1981)
1980 E Uggerhoj, "Channeling in the GeV region," Nucl. Instrum. Meth. 170, 105-113 (1980)
and at the 8th Atomic Collisions in Solids Conf. (1979)
1980 J.H. Barrett & D.P. Jackson, "Role of correlations of lattice vibrations in channeling,"
Nucl. Instrum. Meth. 170, 115-18 (1980)
1980 H.E. Roosendaal, B. Schmiedeskamp, H.H. Hubbes, & H.O. Lutz, "Half wavelength and
stopping power for planar channeled protons in silicon and diamond structure
crystals," Nucl. Instrum. Meth. 170, 119-22 (1980)
1980 E.V. Kornelsen & A.A. van Gorkum, "Enhanced penetration of low energy (25-5000 eV)
helium along the <100> channel in tungsten," Nucl. Intstrum. Meth. 170, 161 (1980)
1981 Jan 5 A. Coreiovei & A. Visinescu, "Semiclassical approach to channeling and
dechanneling," Radiat. Effects 55, 141-48 (1981)
1981 May 27 G.P. Pokhyl & V.V. Cherdyntsev, "Simulation of the stationary potential
distribution in axial channeling," Radiat. Effects 60, 135-41 (1982)
1982 Jan 26 J.A. Golovchenko, D.E. Cox, & A.N. Goland, "Critical analysis of the chargestate dependence of the energy loss of channeled ions," Phys. Rev. B26, 2335-40
(1982)
1982 Apr 26 M. Miyake, M. Yoshizawa, & H. Harada, "Incidence angle dependence of planar
channeling in boron ion implantation into silicon,"J. Electrochem. Soc 130, 716-19
(1983)
1982 May 18 Y.H. Ohtsuki & H. Nitta, "Channeling stopping power for high energy ions,"
Phys.Lett. 93A, 94-96 (1982)
1982 July 29 K. Beck, K. Kopitzki, G. Krauss, & G. Mertler, "A semi-empirical method for the
determination of the spatial distribution of channeled ions," Radiat. Effects 77, 79-87
(1982)
1982 Oct 14 R.A. Lee, "Planar channeling quantum trajectories," Radiat. Effects Lett. 68,
113-19 (1982)
1982 Oct 27 A.W. Saenz, "Rigorous channeling stability theorems," Phys. Lett. 93A, 337-40
(1983)
1982 Dec 14 R.B. Alexander, S.C. Johnson, K.R. Padmanabhan, & J.C. Bucholz, "Effects of
pressure differential on channeling in thin silicon crystals," Appl. Phys. Lett. 42, 80406 (1983)
1983 May 30 E.S. Mashkova & V.B. Fleurov, "Small-angle ion reflections from single
crystals," Radiat. Effects 80, 227-39 (1984)
1983 June 25 E>C> Goldberg and V.H. Ponce,"Energy loss and straggling of channeled
projectiles by inner shell electrons," Radiat. Effects 100, 139-56 (1986)
1983 July 5 E. Fuschini, F. Malaguti, A. Uguzzoni, & E. Verondini, "Shape analysis of
blocking dips: Monte Carlo vs analytical results," Radiat. Effects 81, 37-56 (1984)
1983 July 22 T. Takeda & A. Yoshii, "A two-dimensional Boltzmann transport equation
approach to ion implantation in silicon," IEEE EDL-4, 430-33 (1983)
1983 Nov 3 A.P. Pathak, "Position dependence of channeling stopping power," Phys. Stat.
Sol. (b) 122, 171-74 (1984)
1983 V.A. Bazylev & V.V. Goloviznin, "Theory of stability of transverse energy levels at axial
channels," Radiat. Effects 69, 159-64 (1983)
1983 G.V. Dedkov, A.M. Kumakhov, & M.Z. Sokov, "The study of the flux-peaking effect of
the planar channeling of protons in silicon by computer simulation," Radiat. Effects 71,
261-69 (1983)
1983 G.V. Dedkov, "New approximation for the interaction potential of light channeled
particles with crystals," Radiat. Effects 79, 43-61 (1983)
1984 Mar 21 A.M. Mazzone, "Monte Carlo simulation of channeling effects on recoil motion,"
Radiat. Effects Lett. 86, 191-97 (1984)
1984 June 9 V.V. Rozhkov & S.V. Dyul'dya, "Critical channeling angles for real channels,"
Sov. Tech. Phys. Lett. 10, 499-500 (1984)
1984 June 11 A.M. Mazzone, "Monte Carlo simulation of channeling tail formation under
heavy-dose ion bombardment," J. Appl. Phys. 57, 2337-39 (1985)
1984 June 25 G.P. Pokhyl & V.V. Cherdyntsev, "The effect of a regular arrangement of the
strings upon the energy loss of axially channeled particles," Radiat. Effects 85, 51-55
1984)
1984 Oct 18 J.F. Ziegler & R.F. Level, "Channeling of ions near the silicon <001> axis," Appl.
Phys. Lett. 46, 358-60 (1985)
1984 V.A. Bazylev & A.V. Demura, "The theory of the electron loss by a multiply-charged ion
moving at a small angle to crystal planes," Radiat. Effects 80, 241-59 (1984)
1985 Feb 6 T. Takeda & A. Yoshii, "Axial channeling model for a two-dimensional Boltzmann
transport equation method for ion implantation analysis," IEEE EDL-6, 323-35 (1985)
1985 July 23 G.V. Kovalev, "Asymptotic theory of channeling in the field of an atom chain
and an atomic plane," Sov. Phys.-Solid State 27, 1007 (1985)
1985 M.I.Current, N.L. Turner, T.C. Smith, & D. Crane, "Planar channeling effects in Si(100),"
Nucl. Instrum. Meth. B6, 336-48 (1985)
1986 Aug 4 F. Garofalo & A.M. Mazzone, "Channeling in GaAs," Phys. Stat .Sol. (a) 98, 51720 (1986)
1986 Nov 25 P J.M. Smulders & D.O. Boerma, "Computer simulation of channeling in single
crystals," Nucl. Instrum. Meth.Phys. Res. B29, 471-89 (1987)
Planar Channeling
1973 W.F. van der Weg, H.E. Roosendaal, and W.H. Kool, "High resolution measurements of
energy spectra of protons scattered from silicon crystalsin the case of planar
channeling," Radiat. Effects 17, 91-97 (1973)
1973 V.V. Beloshitsky, M.A. Kumakhov, and V.A. Muralev, " Multiple scattering of channeling
ions in crystals-II. Planar channeling, Radiat. Effects 20, 95-109 (1973)
1974
H.E. Roosendaal, W.H. Kool, W.F. vander Weg, and J.B. Sanders," Critical angles
and minimum yields for planar channeling," Radiat. Effects 22, 89-99 (1974)
1976 D.P. Jackson and .V. Morgan, "Computer modeling of planar dechanneing I:
Monatomic lattices," Radiat. Effects 28, 5-13 (1976)
1976 D.V. Morgan and D.P. Jackson, " Computer modeling of planal dechanneling II:
Diatomic lattices, " Radiat. Effects 29, 99-106 (1976)
1976 D.V. Morgan and D.P. Jackson, "Computer modeling of planar dechanneling III:
Trajectory-dependent electron multiple scattering," Radiat. Effects 29, 107-111 (1976)
Dechanneling
1970 June 5 R.R. Hart, "Disorder dechanneling of low-energy protons and alpha particles in
silicon," Radiat. Effects 6, 51-56 (1970)
1970 Nov 4 D.V. Morgan & D. van Vliet, "Critical approach distances and critical angles for
dechanneling," Radiat. Effects 8, 51-61 (1971)
1970 Nov 4 J. Mory, "Mesure du coefficient de decanalisation par un defaut d'empilement
dans l'or," Radiat. Effects 8, 139-41 (1971)
1972 S.U. Campisano, G. Foti, F. Grasso, M. Lo Savio, and E. Rimini, "Lindhard's multiple
scattering description jutifies axial and planar dechanneling data," Radiat. Effects 13,
157-66 (1972)
1973 Jan 3 M.R. Altan, L.C. Feldman, and W.M. Gibson, "Dechanneling of 5-MeV protons
from planar channels in silicon and its temperature dependence," Radiat. Effects 18,
171-80 (1973)
1974 July 21 H.J. Pabst, "On the influence of the initial row impact parameter and the row
periodicity as ions dechannel," Radiat. Effects 24, 233-37 (1975)
1974 Aug 8 K. Morita and R. Sizmann, "Dechanneling by interstitial atoms," Radiat. Effects
24, 281-85 (1975)
1975 June 9 D.P. Jackson & D.V. Morgan, "Computer modeling of planar dechanneling. I.
Monatomic lattices, Radiat. Effects 28, 5-13 (1976); II. Diatomic lattices," Radiat.
Effects 29, 99-106 (1976) (15 Oct 1975)
1975 D. Ronikier-Polonsky, G. Desarmot, N. Housseau, and Y. Quere, "Dechanneling by gas
bubbles in a solid," Radiat. Effects 27, 81-88 (1975)
1976 T. Waho and Y.H. Ohtsuki, "The diffusion of channeled beams due to potentials from
the continuum-potential model," Radiat. Effects 27, 151-53 (1976)
1977 Nov 14 Y. Quere, "About the dechanneling due to dislocation loops," Radiat. Effects
38, 131-32 (1978)
1978 Sept 4 S.L. Nizhnaya & S. Parilis, "Ion scattering by atomic chains on a solid surface,"
Radiat. Effects 40, 43-52 (1979)
1978 N. Matsunami, T. Goto, & N. Itoh, "Energy and temperature dependences of
dechanneling by displaced atoms," Nucl. Instrum. Meth. 149, 430 (1978)
1978 G. Foti, L. Csepregi, E.F. Kennedy, & J.W. Mayer, "The effect of twins on dechanneling
a charged particle beam," Nucl. Instrum. Meth. 149, 381-85 (1978)
1978 Y. H. Ohtsuki, T. Omura, H. Tanaka, & M. Kitagawa," Decahanneling theory for axial
and planar channels," Nucl. Instrum. Meth. 149, 361-64 (1978)
1979 Mar 23 D.V. Morgan, "A simple model for planar dechanneling alculations," Radiat.
Effects Lett. 43, 97-100 (1979)
1979 Nov 9 N. Matsunami & L.M. Howe, "A diffusion calculation of channeling in Si and Ge,"
Radiat. Effects 51, 111-26 (1980)
1979 Nov 26 P.K. Bhattacharya, J. Chevallier, E. Uggerhoj, J. Mory, & Y. Quere, "Evidence
for dechanneling by dislocations," Radiat. Effects 51, 127-28 (1980)
1979 Dec 3 H. Kerkow, H. Pietsch, & F. Taeuber, "Comparative measurement of proton
dechanneling in Si under channeling, blocking, and double alignment conditions,"
Radiat .Effects Lett. 50, 169-73 (1980)
1980 Dec 11 B. Gruska & G. Goetz, "Dechanneling by dislocations in ion implanted silicon,"
Radiat. Effects 59, 157-67 (1982)
1980 Nov 24 W. Zakowicz & R.H. Pantell, "Effects of dislocations on channeling," J. Appl.
Phys. 52, 2799-2803 (1980)
1980 Dec 11 B. Gruska & G. Goetz, "Dechanneling by dislocations in ion-implanted Si,"
Radiat. Effects 59, 157-67 (1982)
1982 July 15 L.M. Howe, J.A. Moore, N. Matsunami, & D.R. Wright, "Axial dechanneling of
MeV protons in gold," Radiat. Effects 79, 197-216 (1983)
1982 G. Goetz & B. Gruska, "Dechanneling by dislocations and stacking faults in ionimplanted Si," Nucl. Instrum. Meth. 194, 199-204 (1982)
1984 Nov 7 M.L. Swanson, L.M. Howe, N. Matsunami, & A.F. Quenneville, "Dechanneling
by lattice defects," Nucl. Instrum. Meth. B9, 184-96 (1985)
1985 Apr 30 H. Nitta, Semiclassical theory of dechanneling and the diffusion coefficient,"
Phys. Stat. Sol. (b) 131, 75 (1985)
Quasichanneling
1975 L.T. Chadderton, "Comments on the scattering of charged particles by single crystal. 1-3
IV. Quasichanneling, flux peaking, and atom location," Radiat. Effects 27, 13-21
(1975)
Energy Loss
1978 V.V. Beloshitsky and M.A. Kumakhov, " A Theory of energy loss of channeled protons,"
Radiat. Effects 35, 209-16 (1978)
Temperature Effects in Channeling and Dechanneling
1964 Sept 29 D.A. Channing & J.L. Whitton, "Effect of temperature on the channeling of
133Xe ions in gold," Phys. Lett. 13, 27-28 (1964)
1964 J.B. Sanders & J.M. Fluit, "Temperature dependence of the range of focused collision
sequences in copper single crystals," Physica 30, 129-43 (1964)
1965 B.W. Farmery, R.S. Nelson, R. Sizmann, & M.W.Thompson, "The channeling of 2.5MeV protons in Cu, and some effects of temperature and radiation damage," Nucl.
Instrum. Meth. 38, 231-37 (1965)
1967 Feb 27 R.S. Nelson & D.J. Mazey, "The influence of channeling on radiation damage
produced in silicon during ion bombardment," J. Material Sci. 2, 211-16 (1967)
1967 Jan 17 D.A. Channing,"Effect of temperature on the penetration of heavy keV ions in
monocrystalline solids," Can. J.Phys. 45, 2455-66 (1967)
1967 Apr 10 L.M. Howe & D.A. Channing, "Effect of temperature on the penetration of heavy
keV ions in monocrystalline solids," Can. J. Phys. 45, 2467-82 (1967)
1967 Nov 8 P.M. Glotin, "Influence of temperature on phosphorus ion behavior during silicon
bombardment," Can. J. Phys. 46, 705-12 (1968)
1967 Nov 10 J.U. Andersen & E. Uggerhoj, "Investigation of the energy and temperature
dependence of the string effect," Can. J. Phys. 46, 517-25 (1968)
1967 Nov 22 J.A. Davies, L. Eriksson, & J.L. Whitton, "Range measurements in oriented
tungsten single crystals.III.The influence of temperature on the maximum range," Can.
J. Phys. 46, 573-79 (1968)
1973 Jan 3 M.R. Altan, L.C. Feldman, and W.M. Gibson, "Dechanneling of 5-MeV protons
from planar channels in silicon and its temperature dependence," Radiat. Effects 18,
171-80 (1973)
1977 M. Natsunami, T. Goto, and N. Itoh, "Energy and temperature dependences of
dechanneling induced by displaced atoms," Radiat. Effects 33, 209-14 (1977)
1982 Apr 26 E. Fuschini & A. Uguzzoni, "Thermal effects in blocking calculations by a
diffusion model," Radiat .Effects 69, 1113-26 (1983)
1986 M. Hautala, "Channeling of B and As near the <001> axis," Nucl.m Instrum. Meth. B15,
5-77 (1986)
Papers related to enhanced diffusion
1970 Feb 2 O. Meyer & J.W .Mayer, "Enhanced diffusion and outdiffusion in ion implanted
silicon," J. Appl. Phys. 41, 4166 (1970)
Supertails
Note: We do not believe that channeling supertails really exist - from our many years of direct
research. profiling, and study of the literature. We believe that what has been observed is the
result of poor experimental techniques or flaws in the measurement technique, or the result of
thermal redistribution effects.
Papers by R.G. Wilson
R.G. Wilson, "Planar and axial channeling of 800-keV As in <110> silicon," Appl. Phys. Lett.
29, 770-72 (1976)
R.G. Wilson, H.L. Dunlap, and D.M. Jamba, "Angular sensitivity of controlled implantation
doping profiles," NBS Special Publication 400-49, Nat. Bureau of Standards, Nov
1978
D.R. Meyers, R.G. Wilson, and J. Comas, "Consideration of ion channeling for semiconductor
microstructure fabrication," J. Vac. Sci. Technol. 16, 1893-96 (1979)
R.G. Wilson and V.R. Deline, "Ion channeling in GaAs: Si, S, Se, and Te," Appl. Phys. Lett.
39, 793-86 (1980)
J. Comas and R.G. Wilson, "Channeling and random equivalent depth distributions of 150keV Li, Be, and B implanted in Si," J. Appl. Phys. 51, 3697-3701 (1980)
D.R. Meyers, J. Comas, and R.G. Wilson, "Effect of silicon dioxide surface-layer thickness on
boron profiles for directly aligned implants into (100) silicon," J. Appl. Phys. 52, 33579 (1981)
R.G. Wilson, "Channeling depth distributions of Be and Si in GaAs as a function of
implantation energy and fluence," IEEE Electr. Dev. Lett. EDL-3, 210-12 (1982)
R.G. Wilson, "Ion channeling in GaAs: Be, Mg, Zn, and Cd, and calculations of electronic
stopping powers." J. Appl. Phys. 53, 5641-44 (1982)
R.G. Wilson. "Random and channeled implantation profiles and range parameters for P and
Al in crystalline and amorphized Si," J. Appl. Phys. 60, 2797-2805 (1986)
R.G. Wilson, D.M. Jamba,P.K. Chu, C.G. Hopkins, and C.J. Hitzman, "Atom and acceptor
depth distributions for aluminum channeled in silicon as a function of ion energy and
crystal orientation," J. Appl. Phys. 60, 2806-09 (1986)
R.G. Wilson, "Ranges and depth distributions of 200-keV He ions channeled in Si, Ge, and
GaAs crystals," J. Appl. Phys. 61, 2489-91 (1987)
R.G. Wilson, "<110> channeled depth distributions and values of electronic stopping for the
fourth-row transition elements (Z=19 through 28) in the silicon crystal," J. Appl.
Phys. 61, 2734-36 (1987)
R.G. Wilson, "Depth distributions and range and shape parameters for 1H and 2H implanted
into Si and GaAs in random and channeling orientations," J. Appl. Phys, 61, 2826-35
(1987)