2012.9.17

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DEE4521
Semiconductor Device Physics
Lecture 1:
Introduction
Prof. Ming-Jer Chen
Department of Electronics Engineering
National Chiao-Tung University
09/17/2012
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On this Course
Device Physics is Fundamental to EE Disciplines.
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Pioneers of Device Physics
WILLIAM SH O C K L E Y
Transistor technology evokes new physics
Nobel Lecture, December 11, 1956
JOHN BA R D E E N
Semiconductor research leading to the point
contact transistor
Nobel Lecture, December 11, 1956
WALTER H. BRATTAIN
Surface properties of semiconductors
Nobel Lecture, December 11, 1956
http://www.nobelprize.org/
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Importance of the Course
Currently, the significance of device physics dramatically increases.
•
TSMC is next to the World-Class Level Competitor, Intel.
•
Moore’s Law will again be Effective in the next 20 Years.
(20 nm and beyond; 3-D device; Si ==> Ge, GaAs, etc.)
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SOP in Class
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Experiment Oriented
•
Thinking
•
Understanding
•
Analogy
•
Skipping (or Subtracting)
• Picture
• Calculation
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Contents of the Course
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1.
Physics of Bulk Semiconductors (Si, Ge, and GaAs)
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Conduction- and Valence-Band Structures
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Electrons and Holes
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Energy Band Diagram
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Density-of-States (DOS)
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Effective Mass
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Fermi Level and Thermal Equilibrium
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Fermi-Dirac Statistics and Carrier Population
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2.
Physics and Modeling of a Metal-Semiconductor
Contact System
- Energy Band Diagram
- Ohmic Contact
- Schottky Contact
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3.
Physics of Carrier Transport in Semiconductors
- Energy Band Diagrams
- Drift and Diffusion
- Scattering Events and Mobility
- Generation and Recombination, Optical Injection,
and Continuity Equation
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4.
Physics and Modeling of a p-n Junction Diode
- Energy Band Diagram
- Forward and Reverse Mode
- Depletion and Quasi-Neutral Regions
- Thermionic Injection Over the Junction Barrier
- Tunneling through the Barrier
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5.
Physics and Modeling of a MOS System
- Energy Band Diagram
- Quantum Confinement
- Surface Modulation: Accumulation, Flat-band,
Depletion, and Inversion
- Electrostatics
- C/V
6.
MOSFET Device Physics and Modeling
7.
Bipolar Transistor Physics and Modeling
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Some Textbooks Suggested
1.
Robert Pierret, “Advanced Semiconductor Fundamentals”, Addison-Wesley,
1987. (Classical; no examples of Q&A) (Purdue)
2.
Richard Anderson and Betty Lise Anderson,
“Fundamental of Semiconductor Devices”, McGraw-Hill, 1st Edition, 2005.
(General; more examples of Q&A) (Ohio)
3.
Chenming C. Hu, “Modern Semiconductor Devices for Integrated Circuits”,
Pearson Education, 2010. (Concise; enough examples of Q&A) (Berkeley)
4.
Donald A. Neamen, “Semiconductor Physics and Devices – Basic Principles”
McGraw-Hill, 4th Edition, 2012.
(General; more examples of Q&A) (New Mexico)
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Grading
• Four Exams (85%)
- three midterm exams
- one final exam
• Series of Homeworks (15%).
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Course Website:
http://web.it.nctu.edu.tw/~SMS
Office Hours (Room 535):
11:00am to 5:00pm, Tuesday, Thursday, Friday
TA: L. M. Chang 張立鳴 and C. L. Chen 陳泉利
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