Superradiance, Amplification, and Lasing of Terahertz Radiation in an Array of Graphene Plasmonic Nanocavities
V. V. Popov, 1 O. V. Polischuk, 1 A. R. Davoyan, 1 V. Ryzhii, 2 T. Otsuji, 2 and M.S. Shur 3
1 Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch),
Saratov 410019, Russia
2 Research Institute for Electrical Communication, Tohoku University,
Sendai 980-8577, Japan
3 Department of Electrical, Computer, and Systems Engineering,
Rensselaer Polytechnic Institute,
Troy, New York 12180, USA
Optical conductivity of pumped graphene
Terahertz photonics vs terahertz plasmonics
Array of graphene nanocavities - electromagnetic approach
Terahertz amplification and plasmonic lasing condition
Confinement and superradiance of plasmon modes
Conclusions
Bound- and Free-carrier Oscillations at THz quantum transitions
1 THz
4 meV
50 K
THz k T
B
24 meV @300 K free carrier oscillations
j
2 D
1 ps
0.64 meV
8 K
E pump
E
THz
E
0
k T
B
/
/
Carrier Relaxation Dynamics in Graphene
J.M. Dawlaty et al.
APL 92 (2008) 042116
P.A. George et al.
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J.H. Strait et al.
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Evolution of the carrier distribution function
-
+
Quasiequilibration via carrier-carrier scattering after 20~200 fs
Energy relaxation and
Recombination via optical phonons and carrier-carrier interaction
Population inversion!
after a few ps
intraband processes interband transitions
e
4
2
8 k T
B
(1
i
)
ln 1 exp
F k T
tanh
2
F
4
4 i
0
G
(
F
)
)
G
2
(
4
2
/ 2,
F
) d
G
k T )
k T
/ )
F
/ eV
F
2
E
F
L.A. Falkovsky, S.S. Pershoguba,
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V
F
N ( N n
N p
)
μ 250000 cm2/V∙s (
1 ps) for 40 meV
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=1 ps
=0.1 ps k T
B
24 meV @300 K
3 THz
12 meV
150 K
Stimulated emission of IR and THz photons in graphene
Stimulated emission of THz plasmons in graphene
A. Satou et al. F.T. Vasko, V. Ryzhii,
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(200
F. Rana et al. Phys. Rev. B 84 (2011)
045437
Graphene photonic THz laser
?
Graphene plasmonic THz laser high quality factor – weak dephasing small active volume – small gain strong confinement – large gain strong dephasing – low quality factor
Planar Array of Graphene Nanocavities
D.V. Fateev, V.V. Popov, and M.S. Shur, Semiconductors 44, 1406 (2010)
Electromagnetic approach treats the plasmon radiative damping self-consistently, which is important for describing the lasing process
The system of the integral equations for the array of graphene microcavities over the structure period, 0 < x < L , is j x
Me
( )
Me
Me
K x x j
Me x dx
Me
Gr
K x x j
Gr x dx
j x
Gr
( )
Gr
( ) K x x j
Gr x dx
Gr
Gr
Me
K x x j
Me x dx
2
1
E
Me 0
2
1
Gr
( ) E
0 j
Me x j
Gr x are the electric current densities in the graphene nanocavity and metal contact
Plasmon Resonances in Graphene Microcavities absorption
A max res
A max res
0.5(1R
0
)
Fano-like amplification
=1 ps, a =2
m, L= 4
m
g
rad
sc
g
rad
sc
300 K blackbody radiation amplified above the mW/cm 2
At lasing condition, the plasmon coherence in strongly non-equilibrium graphene is restored due to constructive balance of the plasmon gain and plasmon radiative damping: g
E (s-e)
F
,
rad
E
F
(s-e) ,
sc
THz Apmplification in Plasmonic Nanocavities
=1 ps
Re[
Gr
(ω)]<0
=0.1 ps
Re[
Gr
(ω)]<0
Re[
Gr
(ω)]>0
Re[
Gr
(ω)]>0 a =200 nm, L= 400 nm
graphene nanocavities
lasing
THz
q
2 e
2
E
F q /
2 a
Superradiance:
rad
Giant amplification (exceeding 10 3 ) and lasing of THz radiation due to stimulated generation of plasmons in the array of graphene resonant micro/nanocavities is predicted.
The amplification of THz wave at the plasmon resonance frequencies is several orders of magnitude stronger than away from the resonances.
THz lasing is possible for strong coupling between plasmons and THz radiation due to constructive balance of the plasmon gain and plasmon radiative damping. The lasing at the plasmon resonance is achieved when the plasmon gain balances the dissipative and radiative plasmon damping.
Giant THz wave amplification is ensured due to strong plasmon confinement, plasmon local-field enhancement, and superradiant nature of THz emission by the array of plasmonic micro/nanocavities.