Paper review: Fractional Order Plasma Position Control of the STOR-1M Tokamak Outlook of FOC in Plasma Etching: Challenges and Opportunities Zhuo Li PhD student, Dept. of ECE, USU. zhuo.li@aggiemail.usu.edu References • [1]. Shayok Mukhopadhyay, YangQuan Chen, Ajay Singh and Farrell Edwards, “Fractional Order Plasma Position Control of the STOR-1M Tokamak”, 48th IEEE CDC, Dec, 2009, pp.422-427. • [2]. Mukhopadhyay, Shayok, "Fractional Order Modeling and Control: Development of Analog Strategies for Plasma Position Control of the Stor-1M Tokamak" (2009). All Graduate Theses and Dissertations. Paper 460. [online available], http://digitalcommons.usu.edu/etd/460 • [3]. M. Emaami-Khonsari, “Modelling and Control of Plasma Position in the STOR-M Tokamak,” Ph.D., University of Saskatchewan, Saskatoon, April 1990. • [4]. Shane Lynn, “Virtual Metrology for Plasma Etch Processes”, PhD thesis, Electronic Engineering Department, National Univ. of Ireland. • [5] John V. Ringwood, Shane Lynn, Giorgio Bacelli, Beibei Ma, Emanuele Ragnoli, and Sean McLoone, “Estimation and Control in Semiconductor Etch: Practice and Possibilities”, IEEE TRANS ON SEMICONDUCTOR MANUFACTURING, VOL. 23, NO. 1, FEBRUARY 2010 • [6]. Lynn Fuller, “Plasma Etching”, [lecture slides], Microelectronic Engineering, Rochester Institute of Technology. • [7]. Henri Janseny, Han Gardeniers, Meint de Boer, Miko Elwenspoek and Jan Fluitman, “A survey on the reactive ion etching of silicon in micro-technology”, J. Micromech. Microeng. 6 (1996), 14– 28. • [8]. Lab modules, webpage, [online], http://matec.org/ps/library3/secure/modules/047/, [Mar.16.2012] Slide 2 The Physical System • Tokamak: is a device using a magnetic field to confine a plasma in the shape of a “doughnut”. [Wikipedia.org] Fig3-1. The schematic of Tokamak as a transformer.[1] Fig3-2. The STOR-1M Tokamak in USU. [1] Slide 3 Bank Current Waveforms • • • • • BT - Toroidal field bank IOh - Ohmic heating bank IVe - Vertical equilibrium bank IHc - Horizontal compensation bank IVc - Vertical compensation bank Slide 4 Fig4. The bank current waveforms of STOR-1M. [1] Measurement Mechanism • Plasma position estimation mechanism [3] • Four magnetic “pickup” coils measure the magnetic field produced by the toroidal plasma current. • By comparing the strengths of this measured magnetic field one can estimate the position of the current. • Proposed technique in the paper Fig5-1. The Plasma position estimation system.[3] • Ratio of the voltages • π΅π = πΌπ ππ = π΅π = πΌπ ππ = ππ πΌπ 2πππ ππ πΌπ (πΌπ ≈ πΌπ ) 2πππ • ππ + ππ = 100 • E.g. ππ ππ = π΅π π΅π = ππ ππ = 5.6667 Slide 5 (Must hit the wall) Fig5-2. Proposed position estimation approach. [3] Plasma Position Modeling • The transfer function • π π = 2.84π 3 +1.14π7π 2 +1.12π14π +4.5π20 π(π ) π 4 +1.51π4π 3 +3.9π13π 2 +4.3π17π +2.15π21 • First order plus delay model approximation • πΊ π = πΎ π −πΏπ ππ +1 = 0.2096 π −0.0007π 0.0864π +1 Slide 6 Fractional Order Controller • Controller parameters Table: CONTROLLER PARAMETERS FOR THE STOR-1M TOKAMAK Controller Kp Ki Kd order FO-PI 170.2649 32.0719 0 0.7425 ZN-PID 706.584 714.285 0.00035 1 • Results and comparison (on emulator) Slide 7 Fig8-1. Position control results. [3] Fig8-2. Position control results. [3] Conclusion • FO-PI controller is better than the ZN-PID controller in terms of response time, control effort and steady state error. Slide 8 Outlook-challenges • Plasma etching process in semiconductor manufacturing • Etching variables hard to measure • Real-time control hard to achieve • Measurement technology in the literature [5] • • • • • Virtual metrology [4] Optical emission spectroscopy (OES) Mass spectrometry Plasma impedance monitoring Etc. Fig9. OES. [4] Slide 9 Plasma Etching - Intro • Etching outcome and profile • Isotropic (non-directional removal of material from a substrate) • Anisotropic (directional) Ideal etch Poor etch Fig10-1. No process is ideal, some anisotropic plasma etches are close. [6] Fig10-2. One-run multi-step RIE process. Top left: after anisotropic etching the top Si of an SOI wafer. Top right: after etching the insulator and sidewall passivation. Middle left: during isotropic etching of the base Si. Middle right: after isotropic etching the base Si. Bottom: typical finished MEMS products. [7] Slide 10 The Plasma Etching Chamber Fig11-1: Typical parallel-plate RIE system. [*] Fig11-3: Typical RF sputtering system. [*] Fig11-2. RIE Process Chamber. [8] Fig11-4. Physical etch process chamber. [8] * MEMSnet®, https://www.memsnet.org/mems/beginner/etch.html Slide 11 Controls in the Literature Fig12. Etch tool control possibilities with information flow. [4] Slide 12 Controls in the Literature • • • • Run-to-Run (R2R) Control [a],[b],[c]. Predictive functional control [4]. Neural network control Etc. [a], M. Hankinson, T. Vincent, K.B. Irani, and P.P. Khargonekar. Integrated real-time and run-to-run control of etch depth in reactive ion etching. IEEE T. Semiconduct. M., 10(1):121-130, Feb. 1997. [b]. X.A. Wang and R.L. Mahajan. Articial neural network model-based run-to-run process controller. IEEE Trans. Components, Packaging, and Manufacturing Technology, Part C., 19(1):19-26, Jan. 1996. [c]. J.P. Card, M. Naimo, and W. Ziminsky. Run-to-run process control of a plasma etch process with neural network modelling. Qual. Reliab. Eng. Int., 14(4):247-260, 1998. Slide 13 Outlook-Opportunities • Data Fig10. Endpoint mono-chromtor output over four preventative maintenance (PM) cycles. [4] Slide 14 Outlook-Opportunities • Other efficient “learning machines” • RVM • Other fitting methods • TLS fitting for “data boxes” (not point) • Interval computation tools (IntLab) • Dynamic VM – R2R VM • Fractional Order ANN based VM • Neuronal dynamics is inherently “fractional order” • Fractional order iterative learning control • Cognitive process control Slide from Dr.Chen’s Lam Research Talk Slide 15 Outlook-Opportunities • Dynamic Virtual Metrology in Semiconductor Manufacturing Slide 16 http://bcam.berkeley.edu/research/new_researchframes.html Slide from Dr.Chen’s Lam Research Talk Thank you! Q&A Slide 17