High efficiency system design with
Infineon power discretes
-Infineon CoolMOSTM,OptiMOSTM, IGBT and SiC diode
Vincent Zeng(曾伟权)
System application engineer
Infineon Technologies China
Weiquan.zeng@infineon.com
Infineon Products help reduce losses along
the Entire Energy Distribution Chain
Energy
Generation
Energy
Distribution
Energy Consumption
Losses


AC/AC
AC/DC/AC
Losses
Losses

Losses
Motor Drives,
Traction
AC/DC/AC
~10%
10.02.2010
Losses


Power Supply
AC/DC
Point of Load
DC/DC
The evolution on power semiconductor is
never end
Mature Super Junction Technology
G
S
Trench+ Field Stop IGBT
G
S
Emitter
-
n
p+
pp
n
+
Gate
n
-
n
p+
n+
p+
p
n epi
epi
-
-
-
sub
D
Conducting state
Bi-Polar Boost like
Structure SiC Diode
n- (substrate)
n + sub
n (fieldstop)
D
Collector
p+
Blocking state
New die attachment method
Diffusion soldering technology
New Packaging Concept
<1mm HV ThinPAK, TO-247 High Creepage
1200V SiC JFET
10.02.2010
Content
CoolMOS technology
OptiMOS technology
TrenchStop IGBT technology
SiC diode technology
10.02.2010
Copyright © Infineon Technologies 2010. All rights reserved.
What is CoolMOS™ technology
 On state:
Reduction of resistance of epitaxial layer by
high doped n-columns
Standard MOSFET
Source
Gate
n+
p+
 Higher doping level in n-type drift region
results in lower Rds(on)
nepi
 Blocking state:
Compensation of additional charge by
adjacent p-columns
 Half of active chip area is covered by pcolumns
CoolMOS™
Source
Gate
 During blocking state the p-column
compensates the charge of the adjacent ncolumn resulting in high breakdown voltage at
an area specific on-resistance below the silicon
limit!
n+
p+
nepi
Drain
08.04.2015
n+
Drain
p
n+
A short description of CoolMOS™
 High voltage MOSFET in 500V, 600V,
650V, 800V and 900V
30
Standard MOSFET
25
Ron x A ~ V(BR)DSS2,4...2,6
 Offers a significant reduction of
conduction and switching losses
20
 Enables high power density and
efficiency for superior power
conversion systems
10
New horizons
for high voltage
applications
15
5
CoolMOSTM
0
 Best-in-class price/performance ratio
400
500
600
700
800
900
Fig.: A near-linear relationship between Rds(on) and V(BR)DSS
indicates the significant difference between CoolMOS and
conventional MOSFET
CoolMOSTM – Technology leader in high voltage MOSFETs
08.04.2015
1000
CoolMOSTM generation and milestone
Performance
CoolMOSTM C6/E6
CoolMOSTM CP(C5)
• Self-limited dv/dt,
di/dt, easy-to-use.
• Enhanced Diode
Commutation
• 37 mOhm/650V in
TO247
• 50% parastic Cap. and Qg. reduction
• Best-in-class : 99 mOhm in TO220,
45 mOhm in TO247 IPW60R045CP
CoolMOSTM C3
• Revolution in switching losses
• Fast Diode “CFD” Series
• High current capability.
• Best-in-class: 160 mOhm in TO220
CoolMOSTM S5
• SJ Revolution in conduction loss
• Lowest Rds(on) on the market: 70mOhm
• Best-in-class: 190 mOhm in TO220
98
10.02.2010
99
01
04
08
09
Time
Page 7
CoolMOS™ C6 high efficiency @ affordable costs
CoolMOS™ C6 is the new generation of Infineon´s market
leading high voltage power MOSFET´s designed according to the
revolutionary superjunction (SJ) principle
The new 600V&650V C6 portfolio provides all
benefits of a fast switching SJ MOSFET while not
sacrificing ease of use
10.02.2010
CoolMOS™ C6 high efficiency @ affordable costs
Features:
Benefits:

lower area specific on-state
resistance (RDS(on))*A)

lower costs compared to previous
CoolMOS™ generations

reduced energy stored in output
capacitance (Eoss)

low switching losses (due to low
Eoss)

high body diode ruggedness

proven CoolMOS™ quality
combined with high body
diode ruggedness guarantee
outstanding reliability

reduced reverse recovery charge
(Qrr)

easy control of switching
behavior
10.02.2010
CoolMOS C6 reduced energy stored in
output capacitance
CoolMOS™C6 shows the best Figure-of-merit Ron ∗ Eoss
12
IPP60R190C6
Eoss [µJ]
10
SPP20N60C3
8
IPP60R199CP
6
4
2
0
0
100
200
300
Vds [V]
400
500
Low energy stored in output capacitance make make
CoolMOS™C6 the right choice for hard switching
applications.
CoolMOS™ C6 600V efficiency measurement
86%
84%
82%
80%
78%
76%
74%
72%
70%
0.7%
0.6%
0.5%
0.4%
0.3%
0.2%
0.1%
0.0%
-0.1%
2x
IPP60R190C6
Rg,ext=3.3 Ohm
2 x SPP20N60C3
Rg,ext=3.3 Ohm
0
100
200 300
Pout [W]
400
500
Efficiency difference
C6 vs C3 [%]
Efficiency [%]
Efficiency comparison CoolMOS C6 versus C3
0
100 200 300 400 500
Pout [W]
Ease of use & good efficiency especially
in light load conditions!
10.02.2010
CoolMOS™ C6 650V efficiency measurement
DCM PFC stage, 150W, AC in 90V
Ecellent price performance ration, ease of use and good efficiency
especially in light load conditions make 650V CoolMOS™C6 the right
choice for hard switching applications.
CoolMOS C6 gate switching behavior
Under high conduction current
Vgs
40A
pulse current
20A
Nominal current
C6 shows no gate spikes
up to pulse currents
beyond 2 times rated
current
C6
Id
Dynamical allowed value of gate voltage (30V)
Vgs
40A
pulse current
20A
Nominal current
Id
Comp SJ
Competitor part shows turn off
gate spikes even below nominal
current.
drain current IDS [A]
Hard commutation of body diode
40
30
20
10
0
-10
-20
-30
SPP20N60C3
IPP60R190C6
SPP20N60CFD
0
0.2
0.4
0.6
time [µs]
0.8
1
CoolMOS™ C6 shows less reverse recovery charge
than C3 and better softness than CFD
10.02.2010
But, a MOSFET with integrated fast body diode
is required in some design…
Buck
Isolation + Rectification
S3
S8..9
S5
230V
AC
D2..5
S1
350..500V
DC
DC/AC stage
D1
S2
S4
S6..7
 ZVS topology
 S2..S5 require the MOSFET has low reverse recovery charge Qrr and
robustness body diode for hard-commutation
 Reactive power operation
 S6,S7 switches to hard commutation of body diodes
…Infineon has officially launched CoolMOS CFD2
4/8/2015
Page 15
Main differences between CFD and CFD2
 CFD2 is a 650V class MOSFET (CFD is 600V)
 Better light load efficiency due to reduced gate charge
 Softer commutation behavior and therefore better EMI behavior
 CFD2 offers customers a new cost down roadmap
20
Id [A]
15
CFD: fast switching of voltage
or current i.e. di/dt or dv/dt
(main causes of EMI)
Ids_SPW47N60CFD
Ids_IPW65R080CFD
10
CFD2: softer commutation
reduces this problem saving
customer time and money in
designing in the part
5
0
-5
0.25
0.3
0.35
0.4
0.45
0.5
time [µs]
Set date
Page 16
Voltage overshoot CFD2 vs. CFD vs. Competition
T=25°C; If=20A; Rg,d=5.6 Ohm; Ugs=13V
224V less overshoot with CFD2 for reliable systems
800
676V
U [V]
600
SPW47N60CFD
IPW65R080CFD
Comp2 43A
569V
452V
400
200
0
0
100
200
300
t [µs]
400
500
CoolMOS™ C6/E6 Portfolio 600V
TO-252 D-Pak
[D]
3.3 Ω
1.8 A
IPD60R3k3C6
2Ω
2.5 A
IPD60R2k0C6
1.4 Ω
3.2 A
IPD60R1k4C6
0.95 Ω
4.5 A
IPD60R950C6
0.75 Ω
6.2 A
IPD60R750E6
0.6 Ω
7.3 A
IPD60R600E6
0.52 Ω
8A
TO-263
D²PAK [B]
TO-220 [P]
TO-220
Fullpak [A]
TO-262
I²-PAK [I]
TO-247 [W]
IPP60R1k4C6
IPB60R950C6
IPP60R950C6
IPA60R950C6
IPP60R750E6
IPA60R750E6
IPP60R600E6
IPA60R600E6
IPD60R520C6
IPP60R520E6
IPA60R520E6
0.45 Ω
9.5 A
IPD60R450E6
IPP60R450E6
IPA60R450E6
0.38 Ω
11 A
IPD60R380C6
IPB60R380C6
IPP60R380E6
IPA60R380E6
IPI60R380C6
0.28 Ω
15 A
IPB60R280C6
IPP60R280E6
IPA60R280E6
IPI60R280C6
IPW60R280E6
0.19 Ω
20 A
IPB60R190C6
IPP60R190E6
IPA60R190E6
IPI60R190C6
IPW60R190E6
0.16 Ω
24 A
IPB60R160C6
IPP60R160C6
IPA60R160C6
IPW60R160C6
IPP60R125C6
IPA60R125C6
IPW60R125C6
IPP60R099C6
IPA60R099C6
IPW60R099C6
IPB60R600C6
0.125 Ω
30 A
0.099 Ω
35 A
IPB60R099C6
0.07 Ω
47 A
IPW60R070C6
0.041 Ω
77 A
IPW60R041C6
CoolMOS™ C6 Portfolio 650V
IPW65R037C6: 650V 37mΩ TO247
CoolMOS™ E6 650V Portfolio
650V CoolMOS™ CFD2 Portfolio
600 mΩ, 80 mΩ, and 41 mΩ are already launched.
420 mΩ to 110 mΩ will be launched around February to March 2011.
1400 mΩ and 950 mΩ will be launched around May 2011.
Set date
Copyright © Infineon Technologies 2010. All rights reserved.
Page 21
Content
CoolMOS technology
OptiMOS technology
TrenchStop IGBT technology
SiC diode technology
10.02.2010
Copyright © Infineon Technologies 2010. All rights reserved.
Low Voltage MOSFETs
Target Applications
Computing
 Server VRD/VRM
 Notebook
Telecom DC/DC
 Bricks, IBC, POL
SMPS AC/DC
 Telecom SMPS 48V SR
 Server SMPS 12V SR
 NB Adapter 16-20V SR
Industrial
HP Vantage Platinum 2,5kW; 94% Eff.
 Low Voltage Drives
 Solar µ-inverter
Small Signal
 LED
 Automotive
NB Adapter
Beyond the silicon limit
normalized on-resistance
OptiMOS™
CoolMOS™
Si-limit in
TO-220
IFXproducts
Si-limit in
SuperSO8
Si-limit (die)
0
20 40 60 80 100 120 140 160
600
breakdown voltage [V]
2015/4/8
800
1000
Infineon OptiMOSTM
(25V~250V)
 Efficiency
 Lowest RDS(on) and FOM RDS(on) *Qg against competitors
Infineon
160
RDS(on)
Next Best Competitor
FOM RDS(on) *Qg
6000
5000
120
4000
80
3000
2000
40
1000
0
0
25
30
40
60
75
80
100 120 150 200 250 V
CanPAK M
80V
100V
120V
150V
200V
250V
Set date
SuperSO8
BSB044N08NN3 G BSC047N08NS3 G
4.4 mOhm
4.7mOhm
BSB056N10NN3 G BSC060N06NS3 G
5.6mOhm
6.0mOhm
BSC077N12NS3 G
7.7mOhm
BSB150N15NZ3 G BSC190N15NS3 G
15mOhm
19mOhm
BSC320N20NS3 G
32mOhm
BSC600N25NS3 G
60mOhm
25
30
40
60
75
80
100
120
150
D²PAK-7 pin
D²PAK
TO-220
IPB019N08N3 G
1.9mOhm
IPB025N10N3 G
2.5mOhm
IPB036N12N3 G
3.6mOhm
IPB065N15N3 G
6.5mOhm
IPB025N08N3 G
2.5mOhm
IPB027N10N3 G
2.7mOhm
IPB038N12N3 G
3.8mOhm
IPB072N15N3 G
7.2mOhm
IPB107N20N3 G
10.7mOhm
IPB200N25N3 G
20.0mOhm
IPP028N08N3 G
2.8mOhm
IPP030N10N3 G
3.0mOhm
IPP041N12N3 G
4.1mOhm
IPP075N15N3 G
7.5mOhm
IPP110N20N3 G
11.0mOhm
IPP200N25N3 G
20.0mOhm
200
250 V
Package resolution
DPAK
SO8
SuperSO8
S3O8
Performance
Package Size
D²PAK/TO220
SMD leadless package has higher efficiency
94
93
efficiency [%]
92
Higher efficiency through
lower power losses
with SuperSO8 packaging
91
90
BSC047N08NS3
89
IPP057N08N3
88
10
20
30
40
50
output current [A]
Tested in a 12V server power supply in the Sync Rec stage
SMD leadless has lower voltage overshoot
Overshoot comparison
same chip
75 V
70 V
overshoot
65 V
60 V
55 V
SSO8
TO220 low Ls
50 V
TP220 high Ls
45 V
10 A
15 A
20 A
25 A
30 A
35 A
40 A
output current
 Longer electrical MOSFET connections mean
¬ Higher inductance
08.04.2015
¬ Higher voltage stress for the MOSFET
45 A
50 A
Adapterboard
TO220 to SuperSO8
08.04.2015
Source
Drain
Gate
What do I need this board for?
- quick replacement of TO220 in
existing designs
- electrical verification of SuperSO8
Source
Drain
Gate
Sync Rec MOSFETs: Q1, Q2
MOSFET – Gate Resistor: R1
RCD Snubber – Diode: D3
RCD Snubber – Capacitor: C3
RCD Snubber – Discharge Resistor: R3
Connectors for RCD Snubber: A
Screw holes
Content
CoolMOS technology
OptiMOS technology
TrenchStop IGBT technology
SiC diode technology
10.02.2010
Copyright © Infineon Technologies 2010. All rights reserved.
How to improve the standard IGBT-technology?
 Concept of thin wafer with Fieldstoptechnology reduces VCE(sat) dramatically
Emitter
Emitter
Gate
Gate
 Reduction of Conduction Losses for higher Efficiency and
improved thermal properties
n+
p+
 Reduction of Swtiching Losses for higher Efficiency
 Introduction of trench gate technology
reduces VCE(sat) further
n- (substrate)
 Reduction of Conduction Losses for higher Efficiency
n (fieldstop
(fieldstop))
Collector
Collector
2015/4/8
p+
IGBT Technology selection
 TrenchStopTM in thin wfr technology with carrier profile optimized for fast
switching
High Speed 3
08.04.2015
New Highspeed 3 IGBT technology
Trade-off diagram 150°C
32
0.16
30
0.14
IKW25T120
IKP15N60T
28
26
SKB15N60HS
24
22
0.12
Eoff / mJ/A
Eoff / m J/A
Trade-off diagram
Ic = In/2, Tj= 150°C
Competitor A
20
0.10
Competitor A
Competitor A
0.08
IKW25N120T2
0.06
Competitor A
SKW25N120
IKW25N120H3
0.04
18
16
0.02
IGW40N60H3
HighSpeed3
14
Competitor B
High Speed 3
Competitor B
0.00
2
12
2.4
2.8
3.2
3.6
4
VCEsat / V
1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4
VCEsat / V
 Trench gate+ Field Stop offers superior trade-off
 Reduced switching losses for switching Frequencies above 30 kHz
 Soft switching behaviour
 Optimized diode for target applications
08.04.2015
Applikationsbewertung
4.4
New highspeed 3 IGBT switching behavior
Elimination of tail current at high temperature…
Std IGBT3
High Speed 3
CoolmosC3
High Speed 3
…for MOSFET-like switching behavior
08.04.2015
Powerloss comparison
Simulation with IPOSIMTM
3-phase
inverter
Vbus=600V
Fsw=20kHz
Iload=40A
 In comparison with the previous generation TrenchStop2, the HighSpeed 3
shows 30% reduction in switching losses and only 16% increase in conduction
losses.
 The HighSpeed 3 shows approx 10% lower losses than the best competitor,
setting benchmark performance.
2015/4/8
Turn-off Waveform comparison
IGBT Best competitor
IKW30N60H3
Ic=5A
Vce=400V
Vge=+15/0V
 Smooth switching waveforms
 Low dV/dt and dI/dt for reduced EMI
2015/4/8
Infineon’s High Speed 3 IGBT Portfolio
600V and 1200V Product Family
600V
TO-263
1200V
TO-220
TO-247
TO-247
Continuous
collector
current
at T C=100°C
15A
Single IGBT
20A
IGB20N60H3*
IGP20N60H3

25A
30A
IGB30N60H3*
IGP30N60H3
40A

IGW40N60H3
IGW50N60H3
50A


DuoPack ™
15A
20A
IKB20N60H3*
IKP20N60H3*
IKW20N60H3

25A
30A
IKB30N60H3*
IKP20N60H3*
40A
50A
75A
√ Devices are fully released!
08.04.2015

IKW40N60H3 
IKW50N60H3 
IGP15N120H3

IGP25N120H3

IGP40N120H3

IKW15N120H3

IKW25N120H3

IKW40N120H3

IKW30N60H3
IKW75N60H3*
* Engineering samples October 2010
TrenchStop IGBT for low switching
frequency
TO-247
Continuous
collector
current
at T C =100°C
Continuous
collector
current
at T C =100°C
20A
IKW20N60T
30A
IKW30N60T
50A
IKW50N60T
75A
IKW75N60T
 Polarity selection switch
@50Hz switching frequency
conduction loss dominated
Vce(sat) @25°C=1.75V
DuoPack™
Vce(sat) @25°C=1.5V
DuoPack ™
TO-247
15A
IKW15N120T2
25A
IKW25N120T2
40A
IKW40N120T2
Content
CoolMOS technology
OptiMOS technology
TrenchStop IGBT technology
SiC diode technology
10.02.2010
Copyright © Infineon Technologies 2010. All rights reserved.
This is a huge application potential for Schottky
diode in high voltage application, but …
… today’s voltage range of Schottky ends at 250V
Reasons:
 very high leakage currents (reverse loss~forward loss)
 on resistance increases with Ubr2.5 and increasing the area
again increases the reverse loss
With SiC Schottky diodes the range can be extended exceeding 1000V
2015/4/8
SiC feature fast forward conduction
Reduce the Maximum VDS Stress of Power MOSFET!
Very low Vds spike
with SiC Schottky diode
VDS spike up to 600 V with extremely
fast switching boost MOSFET and
competitors tandem diode
Vds
High losses and EMI problems
Vds
Vgs
Due to unipolar nature of shottky,
No need for forward recorver
time to get conductive
Vgs
Improved gate waveform
Using competitor tandem diode
Using SiC Schottky diode
 Replacement of diode allows spike reduction of more than 100 V
 Full switching speed range of boost MOSFET useable for highest efficiency
2015/4/8
Zero reverse recovery charge only with unipolar devices…
SiC Schottky diode
6
T=125°C, UAK=400V
IF=6A, di/dt=200A/ms
4
I [A]
2
0
-2
SiC Schottky diode: 6A, 600V
Si-pn Tandem diode 8A, 600V
Standard Ultrafast 5A, 600V pn-diode
-4
-6
0.05
0.1
0.15
0.2
0.25
Time [µs]
Not possible with Si technology at 600 V rating…
…therefore SiC Schottky diode concept required!
2015/4/8
0.3
Switching loss of SiC keep constant vs Io,Rg and
Tc
Advantages of your design: switching loss does not change with
load condition, Rg of Boost MOSFET and temperature.
2015/4/8
Ruggedness and improved surge current capability
@ elevated Tc (Infineon Patented)
40
Ideal characteristic:
merged pnSchottky diode
bipolar pn diode
forward characteristic
35
IF (A)
30
25
20
unipolar diode
forward
characteristic
15
10
5
0
0.00
2.00
4.00
6.00
8.00
VF (V)
2015/4/8
10.00
12.00
14.00
SiC diode 3rd generation Package updated
Creepage distance improved by a factor of 2
2G
3G
Average creepage
distance 1.78mm
Average creepage
distance 3.64mm
TO-220 real 2pin package
 Besides, SiC diode in SMD package is available
2015/4/8
SiC 3rd generation RthJC updated
Reduction of thermal resistance junction to case
New die attachment method
Diffusion soldering technology
 Thin soldering technique reduces dramatically solder contribution to RthJC
 Thermal margin (Tcase) in your design may be improved.
2015/4/8
SiC 3rd generation stored Qc updated
Reduction of device capacitances
3G offers ever lowest
Qc(Qrr) per given
current rating in the
market
 Enable higher switching frequency and smaller form-factor design
2015/4/8
SiC Diode Portfolio overview
Voltage
600V
600V
1200V
2015/4/8
P/N
IF
QC
Package
IDD03SG60C
IDD04SG60C
IDD05SG60C
IDD06SG60C
IDD08SG60C
IDD09SG60C
IDD10SG60C
IDD12SG60C
3.0 A
4.0 A
5.0 A
6.0 A
8.0 A
9.0 A
10.0 A
12.0 A
3.2 nC
4.5 nC
6.0 nC
8.0 nC
12.0 nC
15.0 nC
16.0 nC
19.0 nC
In mass
In mass
In mass
In mass
In mass
In mass
In mass
In mass
production
production
production
production
production
production
production
production
IDH03SG60C
IDH04SG60C
IDH05SG60C
IDH06SG60C
IDH08SG60C
IDH09SG60C
IDH10SG60C
IDH12SG60C
IDH05S120
IDH08S120
IDH10S120
IDH15S120
3.0 A
4.0 A
5.0 A
6.0 A
8.0 A
9.0 A
10.0 A
12.0 A
5.0 A
7.5 A
10.0 A
15.0 A
3.2 nC
4.5 nC
6.0 nC
8.0 nC
12.0 nC
15.0 nC
16.0 nC
19.0 nC
18.0 nC
27.0 nC
36.0 nC
54.0 nC
In mass
In mass
In mass
In mass
In mass
In mass
In mass
In mass
In mass
In mass
In mass
In mass
production
production
production
production
production
production
production
production
production
production
production
production
Package
DPAK(TO-252)
TO-220 real 2pin
1200V SiC Diode in TO-247HC
IDY10S120
IDY15S120

package pin dimensions compatible to TO3P / TO247

full green package (RoHS compliant & halogen free)

high creepage / air distance of 6.35 / 3.6mm at pins

no pin shoulders

distance “screw hole center” to “pin out plain” is compatible to TO247 / TO3P => no change of heatsink design
required
2015/4/8
SiC Diode in TO220FullPAK package
IDV02S60C
IDV03S60C
IDV04S60C
IDV05S60C
IDV06S60C
2A
3A
4A
5A
6A
 System cost / size savings due to
reduced cooling requirements
 Good thermal performance without
the need for additional isolation layer
and washer
 Higher system reliability due to
lower operating temperatures
and less fans
2015/4/8
Summary
 Explore our website, put us to the test and see why Infineon's
power semiconductors lead to your Superior Solutions.
 CoolMOS (500V~900V)
¬ www.infineon.com/CoolMOS
 OptiMOS (25V~250V)
¬ www.infineon.com/OptiMOS
 IGBT
¬ www.infineon.com/IGBT
 SiC diode (600V/1200V)
¬ www.infineon.com/SiC
08.04.2015