Benha University - Benha Faculty of Engineering
Inter-Disciplinary Programs with Credit Hours
Electro-Mechanical Engineering Program. (Credit Hours System)
Subject: Electronic Devices and Circuits
Summer Semester 2025
Subject Code: EME306
Lecturer: Dr. Ayman Soliman
TA: Eng. Moh Hafez
Sheet No: 6
Date: 08/2025
REVIEW QUESTIONS
1. Write short notes about the following items with the aid of formulas and sketches:
a. BJT Simplified Structure
b. Transistor Types & symbols
c. Modes of Operation of BJT and their applications
d. Active, saturation and cutoff modes of operation of a BJT
e. BJT small signal models
PPROBLEMS
5.1 The terminal voltages of various npn transistors are measured during operation in their respective circuits
with the following results:
In this table, where the entries are in volts, 0 indicates the reference terminal to which the black (negative)
probe of the voltmeter is connected. For each case, identify the mode of operation of the transistor.
5.2 In a particular BJT, the base current is 10 μA, and the collector current is 800 μA. Find β and α for this
device.
5.3 An npn transistor of a type whose β is specified to range from 50 to 300 is connected in a circuit with
emitter grounded, collector at +10 V, and a current of 10 μA injected into the base. Calculate the range of
collector and emitter currents that can result. What is the maximum power dissipated in the transistor? (Note:
Perhaps you can see why this is a bad way to establish the operating current in the collector of a BJT.)
© Dr. Ayman Soliman
5.4 Measurements made on a number of transistors operating in the active mode with iE =1 mAindicate base
currents of 10 μA, 20 μA, and 50 μA. For each device, find iC, β, and α.
5.5 Complete the following table
5.6 For the circuits in Fig. P5.6, assume that the transistors have very large β. Some measurements have been
made on these circuits, with the results indicated in the figure. Find the values of the other labeled voltages
and currents.
5.7 Measurements on the circuits of Fig. P5.7 produce labeled voltages as indicated. Find the value of β for
each transistor.
© Dr. Ayman Soliman
5.8 For the circuit in Fig. P5. 8 let VCC =10 V, RC =1 kohms, and RB = 10 kohms. The BJT has β=50. Find
the value of VBB that results in the transistor operating (a) in the active mode with VC =2 V; (b) at the edge
of saturation;(c) deep in saturation with βforced = 10. Assume VBE = 0.7 V.
5.9 The pnp transistor in the circuit in Fig. P5.9 has β=50. Show that the BJT is operating in the saturation
mode and find βforced and VC. To what value should RB be increased in order for the transistor to operate
at the edge of saturation?
© Dr. Ayman Soliman
5.10 The transistor in the circuit of Fig. P6.51 has a very high β. Find VE and VC for VB (a) +2.0 V, (b)
+1.7 V, and (c) 0 V.
© Dr. Ayman Soliman