- No category
High-Performance Power Packaging: Nanoscale Capacitors & Inductors
advertisement
Emerging high-performance and low-cost power packaging solutions with nanoscale capacitors and inductors P. M. Raj, Himani Sharma, Vanessa Smet and Rao R. Tummala 3D Systems Packaging Research Center, Georgia Institute of Technology, Atlanta, USA Matt Roming and Saumya Gandhi + - Texas Instruments, 13020 TI Blvd, Dallas, TX 75243 Naomi Lollis and Mitch Weaver # A.V.X. Corporation, One AVX Blvd, Fountain Inn, SC 29644 Other Collaborators: ^ - H.C.Starck GmbH, Im Schleeke 78-91, 38642 Goslar/Germany & Heraeus Inc., Leverkusen, Germany. Summary CONFIDENTIAL GT-PRC is innovating power packaging technologies with advanced components and 3D integration, and also creating an industry ecosystem of material suppliers, component manufacturers and end-users: Capacitors in consumer power modules: – Silicon-integrated nanoscale tantalum capacitors High-temperature and high-voltage capacitors with: – Porous copper electrodes – Nanoscale inorganic – organic hybrid dielectrics Capacitors and inductors in integrated voltage regulators: – Low-cost polymer nanomagnetic inductors – Panel-scale inductor and capacitor integration Shielding: – Nanolayered structures for performance beyond copper Slide 2 Packaging R&D at GT-PRC High-temp Material & Reliability RF (WLAN & LTE) Integrated Voltage Regulator High-power & Reliability Radar, Camera with GFO 3 | Georgia Tech PRC 2.5D Glass Interposer 5G & mm-Wave Prof. Rao R. Tummala CONFIDENTIAL Why Collaborate With Georgia Tech PRC No. 1 Academic Leader in IC & Systems Packaging Technical Vision Consistent with Market Needs Co-development of Panel-based Glass Packaging with 50 Global Researchers, Developers, Manufacturers and users Explore and Develop Advanced Systems Packaging Technologies Beyond Industry’s 3-year Horizon Seamless from R&D, Prototype, and Tech Transfer Enabling Commercialization Track Record of Technology Breakthroughs Only 300mm Cleanroom Panel Facility in the Academic World > 50 Person Co-development Team: Full-time Researchers, Manufacturing Industry Partners, Graduate Engineers, Faculty and On-campus Industry Engineers Leverage: $8M/100k Slide 4 4 Global Industry Partners in Co-development NORTH AMERICA Corning – Glass Dow Chemical – Polymers Advantech – Deposition Coherent – Laser ESI – Laser K&S – TCB Bonder MKS – Plasma Etching Rudolph – Lithography SavanSys – Cost Model Tango – PVD Tools Veeco – Cleaning QualiTau – Assembly AMD – 2.5D AVX – Passives GlobalFoundries Intel – Digital Johnson Battery – User Qualcomm – 5G, Fan-out, RF TE – Opto TI – Passives Materials 5 | Georgia Tech PRC EUROPE HC Starck – Capacitors Schott – Glass Atotech – Plating Suss – Laser Via Xyztec – Assembly TDK-Epcos – RF Valeo – ADAS ASIA Orbotech – Metrology PacTech – Assembly CHINA JCET – Bumping JAPAN Ajinomoto – Dry Film Asahi Glass – Glass JSR – Low-loss Polymer Nitto Denko – Magnetics Panasonic – Low-loss Polymer Taiyo Ink – Photopolymer TOK – Photopolymer Asahi Glass – TPV Disco – Dicing KOREA Gigalane – RF TAIWAN Unimicron – 2.5D TSMC – User Hitachi Metals – 2.5D NGK/NTK – 2.5D Shinko – 2.5D Namics – Underfill WALTS – Substrate Murata – RF Tools Substrates Prof. Rao R. Tummala Assembly Users Technology Trends and Drivers CONFIDENTIAL Higher bus voltage to suppress losses Integrated power conversion with the load: – Suppress I2 R losses – Minimize the need for decoupling capacitors Integration of storage elements – should not offset the benefits or interconnection losses Better Power distribution network designs • • • • • • Interconnection Length Discrete Modules IC C C PWB C Inductors L L Short PDN path Low impedance Less voltage drop Less voltage variation Less de-caps More efficiency C IC EMBEDDED ACTIVES INDUCTOR IC CAPACITOR EMBEDDED ACTIVES AND PASSIVES C L Component Density Slide 6 EMBEDDED ACTIVES AND PASSIVES CONFIDENTIAL Large-Area Capacitor and Inductor Integration • Both capacitors are inductors are made as large-area free-standing films • Can be pre-tested for yield and performance • Laminated onto substrate or wafer • Or diced into IPDs and embedded or surface-assembled Magnetic film Insulation layer Magnetic FIlm Insulation layer Capacitor Layer at panel scale Spiral inductor Inductor layers at panel scale Large panel LC integration process Slide 7 CONFIDENTIAL Glass Panel Capacitor and Inductor Integration Embedded power capacitor layer C Embedded power inductor layer Glass L Integrated Power Module with processor C L Glass • Glass to support high-density fine-line wiring on large 510 x 510 panel manufacturing • Currently ongoing, in collaboration with component manufacturers and end-user companies Slide 8 CONFIDENTIAL Capacitors in Consumer Power Modules Silicon-integrated nanoscale tantalum capacitors Slide 9 Capacitor Integration in Consumer Power Modules Discrete power module C L IC C Integrated power module INDUCTOR IC CAPACITOR Wafer Integration of Ta Film Capacitors CONFIDENTIAL Component Manufacturer (Ex. AVX) Ta foil Anode Semiconductor Wafer Cathode Cathode Anode Integrated capacitor on a chip Slide 11 CONFIDENTIAL Bulky Ta Vs Ta Film Capacitors Metal Wafer or substrate • Thickness: 500 microns • Thickness: 75 microns • 200 micron conducting path • 50 micron conducting path • CP/Carbon/Silver paste • Molded in lead-frame • (extra pkg volume) • Minimal interfaces; • Direct metallization of CP with Cu/Au • (Minimal packaging volume) • 100 milliohms x microfarad • 20-50 milliohms x microfarad • 1-5 MHz • >10 MHz Slide 12 CONFIDENTIAL Competitiveness of GT capacitors Parameters Si deep trench Discrete MLCC Foil Capacitors Component thickness (µm) ~ 200-300 200 75 Capacitance (µF/mm2) 1 2-3 1 Frequency (MHz) - 150 1 - 150 Leakage current (µA/µF) 0.1 0.1 0.1 Slide 13 CONFIDENTIAL Capacitor Integration scheme I. Passivation Capacitor foil II. Lamination onto substrate III. Planarization Si or package substrate Si or package substrate Cu pads and interconnects IV. Via drill V. Metallization a. Desmearing Si or package substrate Slide 14 b. Electroless Cu seed layer c. Photolithography Si or package substrate d. Electroplating CONFIDENTIAL Demo. of Capacitor Integration Dielectric Anode • Printed tantalum with lowtemperature sintering Component Integration on silicon • Thin-film design for high volumetric density and frequency stability • Lamination onto silicon with short copper interconnections 100 µm Slide 15 Dielectric Thickness (nm) 160 140 120 100 80 60 • 40 20 0 0 50 100 Anodization for conformal oxide growth with controlled thickness Anodization Voltage (V) Cathode • Cathode dipping process for low ESR and high capacitance density • Lift-off process for easy cathode patterning CONFIDENTIAL Capacitor Reliability 65°C/95%RH for 500 hours 1.15 µF/mm2 at 1 MHz 1.34 µF/mm2 at 1 MHz 65°C/95%RH for 1000 hours 1.19 µF/mm2 at 1 MHz 1.09 µF/mm2 at 1 MHz • Capacitance response to frequency similar before 80 kA-8V and after exposure to elevated temperatures and 200 nm passivation moisture • Improved ESR after testing • Near-hermetic seal that removes need for casing Slide 16 CONFIDENTIAL Manufacturing Ecosystem for Silicon-Integrated Foil Capacitors Texas Instruments Component Manufacturer (Ex. AVX) Ta foil INDUCTOR CAPACITOR IC Power modules with passiveactive integration Anode Cathode Cathode Wafer or substrate Slide 17 Anode CONFIDENTIAL High-temperature and high-voltage capacitors with nanoscale hybrid dielectrics Slide 18 CONFIDENTIAL High-Temperature and High-Voltage Capacitors 700 V; 625 A current; 68 mm x 34 mm x 30 mm Safron’s olymer film capacitors Operating voltage Capacitance Case-size (in mm) 400 V 120mF Diameter: 25 mm Length: 30 mm 400 V 68mF Diameter: f20 Length: 30 mm f Electrolytic caps Vishay 400 V formed dielectric Slide 19 AMS’ metallized polymer film capacitors EPCOS: MLCCs with PLZT 11 microfarad/cc; 350 V CONFIDENTIAL Theoretical versus Achieved Volumetric Density for 450 V Applications Capacitance Density (nF/mm3 or microfarad/cm3) 80.000 PRC approach 70.000 60.000 Technology Gap (between current status and theoretically achievable) 50.000 40.000 30.000 20.000 10.000 0.000 Polymer film Al Foil Cu with hybrid HV MLCC (CZT) HV MLCC (PLZT) 20 Slide 20 Thin Planar HV and HT Capacitors 8-9 microfarad/cm3 450 V 85-115 C 40 microfarad/cm3 450 V >175 C Porous copper Electrode – Porous copper electrodes – Inorganic-organic hybrid dielectric o Permittivity of 20 o BDV of 300 V/micron – – – – – Layering with high thermal conductivity adhesives High thermal-stability adhesives Vias and metallization Solder termination with through-vias 3D stacking for scaling up in capacitance Slide 21 Conformal counter electrode CONFIDENTIAL Inorganic-Organic Hybrid Nanodielectrics (Conformally coated on porous copper electrodes) CONFIDENTIAL • Temperature stability of 300°C Hybrid inorganic-organic dielectric with high permittivity and BDV • Permittivity ~ 20 and high breakdown strength • Extractable energy density of 40 J/cm3 before packaging Joe Perry, GT Slide 22 CONFIDENTIAL Capacitors and Inductors in Integrated Voltage Regulators Panel-scale integration Slide 23 CONFIDENTIAL Competitiveness of GT Embedded Inductors Air core L/RDC (nH/mΩ) Sputtered Thinfilm Magnetic Composites Sputtered films as glass IPDs 0.20 0.20 ~20 5-10 AC losses <1% (% of total loss) <1% <1% <1% Current handling (A/mm2) 1-2 1-2 1-2 >1 IC Inductors Slide 24 L IC L CONFIDENTIAL Advanced Magnetic Substrates Nitto Denko Corporation Magnetic sheets Polymer insulation Magnetic film Copper winding IC v Slide 25 v Substrate Magnetic film Laminate substrate IC Copper 25 v Nanomagnetic High-Sat, Soft Magnetic Core Material Material sample thickness = >40um High deposition rate – high throughput and low cost IC or glass substrate- compatible Deposition thickness capability up to 50um demonstrated μr= 200, Bsat= 1.3 T, Q @ 5 MHz>90, Q@ 20 MHz=30 0.5 microhenries; Isat of 2 Amp demonstrated on 6 inch; Toroid and solenoid inductors demonstrated Cu Windings Core y Confidential Material AIS Company Confidential Relative Permeability • • • • • • • Ur’ Ur’ Ur’’ Ur’’ Frequency (MHz) 26 CONFIDENTIAL Inductors IPDs with Nanomagnetic Films on 50 microns glass Permeability Solenoid inductors 1000 900 800 700 600 500 400 300 200 100 0 1.E+07 Real Imag 1.E+08 1.E+09 Frequency (Hz) 70 Nanomagnetic film : T=0.2um Inductor: T=10um Oxide: T=0.1um : T=10 um 3 layers at the top : 3 nanomagnetic films & 3 Oxides 1 layer at the center : 1 nanomagnetic film 3 layers at the bottom : 3 nanomagnetic films & 3 Oxides Glass: T=100um Slide 27 Inductance (nH) Potcor or racetrack inductors Magnetic inductors 60 50 40 30 ~10X enhancement in inductance 20 10 0 0 5 10 15 20 25 Frequency (MHz) 30 35 CONFIDENTIAL LC-Embedded Power Substrate • Pre-manufactured capacitors fan-out embedded in organic laminate panels • Magnetic components as large-area substrates • Vertical through-via interconnections • Ability to support redistribution layers on the top for routing • Fine-pitch processor or other logic ICs on the topic Slide 28 C L CONFIDENTIAL Component- and Package-Level Shielding Parameter Objectives Shielding 60 - 120 dB Frequency 1 MHz – 40 GHz Illustration borrowed from Murata Distance of 0.1 – 10 mm separation Shield metal thickness ~5-50 um Component-level shielding: • Plated copper • Multilayered metallic structures External shielding: • Spray-coated, plated, sputtered Slide 29 Field patterns for circular loop Materials beyond copper are needed to shield magnetic fields CONFIDENTIAL Better EMI isolation Over Cu with Cu-Magnetic structures (b) -40 (a) NiFe+Ti Isolation (dB) -50 NiFe No shield Cu -60 -70 Cu(7)NiFe(3) Cu(3)NiFe(7)Ti -80 1 2 3 4 5 6 7 8 Separation Distance (mm) (a) -20 (b) NiFe Isolation (dB) -30 Cu NiFe+Ti No shield -40 -50 -60 Cu(3)NiFe(7)Ti Cu(7)NiFe(3) -70 1 2 3 4 5 6 Separation Distance (mm) Slide 30 7 8 CONFIDENTIAL Summary GT-PRC is innovating power packaging technologies and also creating an industry ecosystem of material suppliers, component manufacturers and end-users: • Capacitors in consumer power modules: • Silicon-integrated nanoscale tantalum capacitors • High-temperature and high-voltage capacitors with: • Porous copper electrodes • Nanoscale inorganic – organic hybrid dielectrics • Inductors and capacitors in integrated voltage regulators: • Low-cost polymer nanocomposite inductors • Panel-scale inductor and capacitor integration • Integrated shielding at component and package-level • Materials beyond copper Slide 31
0
advertisement
Download
advertisement
Add this document to collection(s)
You can add this document to your study collection(s)
Sign in Available only to authorized usersAdd this document to saved
You can add this document to your saved list
Sign in Available only to authorized users