The Sustainability Challenge: Wet Etching and Surface Cleaning for Device Z-scaling Ian Brown Yasutoshi Okuno October 18, 2022 SCREEN Semiconductor Solutions Co., Ltd. SPE-221014151348808-L1 1 The names of company or products or services, etc. on this document are the trademarks or registered trademarks of their respective companies. Although "TM" and "®" may not be specified in this document, it is prohibited by the Trademark Law, etc. to use them without the permission of each right holder. 本資料に記載の会社名、製品名、サービス名等は、各社の商標または登録商標です。 本資料上では「TM」「®」を明記していない場合もありますが、これらを各権利者の許諾なしに使用等することは、 商標法等で禁止されています。 SCREEN Semiconductor Solutions Co., Ltd. SPE-221014151348808-L1 2 Outline ♦ Device Z-scaling and Cleaning Challenge ♦ Sustainability Challenge ♦ R&D Challenges to develop next generation cleaning ♦ Summary SCREEN Semiconductor Solutions Co., Ltd. SPE-221014151348808-L1 3 ♦Device Z-scaling and Cleaning Challenge – Logic scaling trend – Defect requirement and trend – Cleaning challenge for Nanosheet and Forksheet era SCREEN Semiconductor Solutions Co., Ltd. SPE-221014151348808-L1 4 ♦Device Z-scaling and Cleaning Challenge – Logic scaling trend – Defect requirement and trend – Cleaning challenge for Nanosheet and Forksheet era SCREEN Semiconductor Solutions Co., Ltd. SPE-221014151348808-L1 5 Logic scaling trend (1) ♦ Z-scaling for sub-nanometer node, not 2D materials Victor Moroz, Synopsys, SSDM2022 Short Course SCREEN Semiconductor Solutions Co., Ltd. SPE-221014151348808-L1 6 Logic scaling trend (2) ♦ Lateral scaling is going to the end ~ 2030 Mustafa Badaroglu, Qualcomm, SSDM2022 Short Course SCREEN Semiconductor Solutions Co., Ltd. SPE-221014151348808-L1 7 ♦Device Z-scaling and Cleaning Challenge – Logic scaling trend – Defect requirement and trend – Cleaning challenge for Nanosheet and Forksheet era SCREEN Semiconductor Solutions Co., Ltd. SPE-221014151348808-L1 8 FinFET to GAA defect requirement Layer-based tolerable defect density for achieving yield of 80% [def/cm2] ♦ Difficulty doubled for GAA defect control 0.350 0.300 0.250 Defect density needs to be reduced almost by half. 0.200 FinFET GAA 0.150 0.100 0.050 0.000 IRDS2022 YE SCREEN Semiconductor Solutions Co., Ltd. SPE-221014151348808-L1 9 More defect challenges are on the way ♦ Defect control becomes even more challenge beyond ~2030 Defectivity D0 target (defects/inch2) 0.070 Defectivity D0 target (defects/inch2) 0.060 0.050 0.040 0.030 0.020 0.010 0.000 2020 2025 2030 YEAR OF PRODUCTION SCREEN Semiconductor Solutions Co., Ltd. 2035 2040 Redraw from IRDS2022 MM SPE-221014151348808-L1 10 ♦Device Z-scaling and Cleaning Challenge – Logic scaling trend – Defect requirement and trend – Cleaning challenge for Nanosheet and Forksheet era SCREEN Semiconductor Solutions Co., Ltd. SPE-221014151348808-L1 11 Cleaning challenge for GAA and Forksheet era 16 Number of surfaces 14 12 10 Horizontal surface 水平面 Vertical surface 垂直面 Surface in 複雑構造内の面 complicated structure 8 6 4 2 0 FinFET Nanosheet SCREEN Semiconductor Solutions Co., Ltd. Forksheet SPE-221014151348808-L1 12 Cleaning challenge for GAA and Forksheet era 16 Number of surfaces 14 12 10 Horizontal surface 水平面 Vertical surface 垂直面 Surface in 複雑構造内の面 complicated structure 8 6 4 2 0 FinFET Nanosheet SCREEN Semiconductor Solutions Co., Ltd. Forksheet SPE-221014151348808-L1 13 Cleaning challenge for GAA and Forksheet era 16 Number of surfaces 14 12 10 Horizontal surface 水平面 Vertical surface 垂直面 Surface in 複雑構造内の面 complicated structure 8 6 4 1 Horizontal Top Plane 2 0 FinFET Nanosheet SCREEN Semiconductor Solutions Co., Ltd. Forksheet SPE-221014151348808-L1 14 Cleaning challenge for GAA and Forksheet era 16 Number of surfaces 14 12 10 6 Vertical surfaces Each surface needs to be cleaned/etched equally to reduce variability 8 Horizontal surface 水平面 Vertical surface 垂直面 Surface in 複雑構造内の面 complicated structure 6 4 2 0 FinFET Nanosheet SCREEN Semiconductor Solutions Co., Ltd. Forksheet SPE-221014151348808-L1 15 Cleaning challenge for GAA and Forksheet era 16 Number of surfaces 14 12 10 Horizontal surface 水平面 Vertical surface 垂直面 Surface in 複雑構造内の面 complicated structure 8 6 4 2 0 FinFET Nanosheet SCREEN Semiconductor Solutions Co., Ltd. Forksheet SPE-221014151348808-L1 16 Cleaning challenge for GAA and Forksheet era 16 Number of surfaces 14 Forksheet adds to the complexity 12 10 Horizontal surface 水平面 Vertical surface 垂直面 Surface in 複雑構造内の面 complicated structure 8 6 4 2 0 FinFET Nanosheet SCREEN Semiconductor Solutions Co., Ltd. Forksheet SPE-221014151348808-L1 17 New devices create more challenges in cleaning ♦ New materials, more surfaces, defect density Drying Collapse of vertical structure Collapse of horizontal structure Collapse of horizontal structure Etching uniformity 3 faces / Fin # fins 4 faces / Sheet # sheets 3 faces / Sheet # sheets Cleanliness and removal efficiency Damage (Fin breakage, etc.) Insufficient cleaning inside complex shapes Insufficient cleaning inside complex shapes Exposed material (selectivity) Si / SiO2 / Si3N4 + Spacer material + PMOS/NMOS + Spacer material + PMOS/NMOS FinFET Nanosheet Forksheet SCREEN Semiconductor Solutions Co., Ltd. SPE-221014151348808-L1 18 ♦Sustainability Challenge – Defect reduction to lowering CO2 emission – Life-cycle assessment (LCA) challenge – Recent achievement by SCREEN – Team-up for sustainability SCREEN Semiconductor Solutions Co., Ltd. SPE-221014151348808-L1 19 Defect reduction to lowering CO2 emission ♦ Yield improvement is more important for Nanosheet even for CO2 emission CO2 emission pre X% of Yield improvement 0.06 [kg/cm2] 0.05 5% 10% ~60% more effective cp. N28 0.04 0.03 0.02 0.01 0 iN28(193i) iN8 SCREEN Semiconductor Solutions Co., Ltd. iN3 NSH SPE-221014151348808-L1 20 ♦Sustainability Challenge – Defect reduction to lowering CO2 emission – Life-cycle assessment (LCA) challenge – Recent achievement by SCREEN – Team-up for sustainability SCREEN Semiconductor Solutions Co., Ltd. SPE-221014151348808-L1 21 Life-cycle assessment (LCA) challenge ♦ Adding process related LCA (Red) Process resource Raw Mat Gas & Chemicals Utility electricity Gas Exhaust SEMI STD New challenge Process related LCA Exhaust Air release (Air) prc Vac LN2 prc N2 g (Air) prc P.Air Heat exhaust Water prc CW Heat prc DIW CO2g O2g HF aq NH3 aq H2O2 aq HCl aq prc prc prc DIW-CO DIW-O3 HDI 2 Prc Tool Scrubber Cooling Chemical Ex. Solvent prc Alkali prc O3 aq prc HF aq prc Acide prc Collaboration with Nagase SCREEN Semiconductor Solutions Co., Ltd. SPE-221014151348808-L1 22 Effect of adding process related LCA ♦ More than 80% increase of CO2 emission Add Process LCA Electricity Fab Utility Exhaust SEMI STD Chemical LCA Waste liquid treatment ~ 80% more CO2 emission Collaboration with Nagase SCREEN Semiconductor Solutions Co., Ltd. SPE-221014151348808-L1 23 ♦Sustainability Challenge – Defect reduction to lowering CO2 emission – Life-cycle assessment (LCA) challenge – Recent achievement by SCREEN – Team-up for sustainability SCREEN Semiconductor Solutions Co., Ltd. SPE-221014151348808-L1 24 Recent achievement by SCREEN ♦ Hot DIW recirculation to reduce waste DIW & energy DIW consumption Energy consumption 1,500 - 85% 20,000 MW / Year kL / Year 30,000 10,000 0 Conventional One-way model 1,000 500 0 New Cirtulation model DIW usage > Reduced by 20,000 kL/year - 82% Conventional One-way model New Circulation model Power consumption at 60℃ HDIW > Reduced by 900 MW/year SCREEN Semiconductor Solutions Co., Ltd. SPE-221014151348808-L1 25 Recent achievement by SCREEN ♦ DIW water and SPM usage reduction DIW Consumption with reclaim - 80% 15,000 kL / Year Normalized volume per wafer 20,000 10,000 5,000 0 Conventional Conventional Process SPM Reduction New Newapproach Process DIW usage > Reduced by 10,000 kL/year 1 - 68% 0.8 0.6 0.4 0.2 0 Conventional Conventional Process New New Process Process Sulfuric acid and hydrogen peroxide (SPM) volume reduced by 68% per wafer SCREEN Semiconductor Solutions Co., Ltd. SPE-221014151348808-L1 26 ♦Sustainability Challenge – Defect reduction to lowering CO2 emission – Life-cycle assessment (LCA) challenge – Recent achievement by SCREEN – Team-up for sustainability SCREEN Semiconductor Solutions Co., Ltd. SPE-221014151348808-L1 27 Team-up for sustainability ♦ International – IMEC SSTS (Sustainable Semiconductor Technologies and Systems) – SIA the Semiconductor PFAS Consortium – SEMI Sustainability Advisory Council – SEMI Semiconductor Climate Consortium – IRDS Water + Energy Taskforce ♦ Japan – SDRJ (The System Device Roadmap Committee of Japan) EHS WG – AIST Green Sustainable Semiconductor Manufacturing Technology WG – TIT Research Institute for Integrated Green-niX ♦ Private – Collaboration with Nagase & Zeroboard – Many customer collaboration SCREEN Semiconductor Solutions Co., Ltd. SPE-221014151348808-L1 28 ♦R&D Challenges to develop next generation cleaning – In-situ TEM study for pattern collapse – Scientific model base development SCREEN Semiconductor Solutions Co., Ltd. SPE-221014151348808-L1 29 ♦R&D Challenges to develop next generation cleaning – In-situ TEM study for pattern collapse – Scientific model base development SCREEN Semiconductor Solutions Co., Ltd. SPE-221014151348808-L1 30 Overview of joint research LC-TEM Substrate observation technology IPA Columnar pattern Substrate processing technology Hokkaido University’s proprietary technology TEM In-liquid observation holder https://www.protochips.com/products/poseidon-select/ Si substrate Cross-section of Si pattern after IPA drying (TEM image) Purpose: To develop observation technology that is capable of in-liquid observation of nano-scale structures under atmospheric pressure and in real time https://www.screen.co.jp/news/NR220729 SCREEN Semiconductor Solutions Co., Ltd. SPE-221014151348808-L1 31 In-situ TEM observation of nano-pillar collapse behavior Source: Y. Sasaki et al., ACS Applied Nano Materials Deepening the understanding of drying behavior and seeking sophistication of SCREEN’s drying technology SCREEN Semiconductor Solutions Co., Ltd. SPE-221014151348808-L1 32 ♦R&D Challenges to develop next generation cleaning – In-situ TEM study for pattern collapse – Scientific model base development SCREEN Semiconductor Solutions Co., Ltd. SPE-221014151348808-L1 33 Scientific model base development for wet equipment ♦ Leverage progress in “compute” CFD calculation size: μm - mm time: sec - min CFD calculation size: 0.1 μm -100 μm time: msec CFD calculation size: 10 μm -1 μm time: μsec MD calculation/responsive force-field MD size: 1 nm - 10 nm time: nsec Ab inito DFT size: 0.1 nm -1 nm time: fsec - psec Concentration on full wafer surface Concentration in liquid film Substances near wafer Reaction at surface SCREEN Semiconductor Solutions Co., Ltd. SPE-221014151348808-L1 34 Full scale dynamic modeling of liquid film on wafer ♦ Recent compute power allows full wafer modeling Comparison of calculated and measured values Thickness Vr Source: M. Sato et al., 17th OpenFOAM Workshop This achievement has been obtained through a subsidized project by the New Energy and Industrial Technology Development Organization (NEDO) Some of the results of this research were obtained using SQUID at the Cybermedia Center, Osaka University.. SCREEN Semiconductor Solutions Co., Ltd. SPE-221014151348808-L1 35 Summary ♦ Sustainably in device Z-scaling is a critical factor for both device manufacturers and equipment manufacturers. ♦ Defect reduction by wet-cleaning technology is the most effective pathway for reducing CO2 emission in advanced nodes. ♦ Scientific model base development for wet cleaning technology becomes relevant thanks to recent “compute” progress. This positive feedback loops are the key for further growth of “semiconductor industry”. SCREEN Semiconductor Solutions Co., Ltd. SPE-221014151348808-L1 36
0
advertisement
Download
advertisement
Add this document to collection(s)
You can add this document to your study collection(s)
Sign in Available only to authorized usersAdd this document to saved
You can add this document to your saved list
Sign in Available only to authorized users