BAV99
Discrete POWER & Signal
Technologies
N
BAV99
CONNECTION DIAGRAM
3
3
3
A7
2
1
SOT-23
2
1
2
1
High Conductance Ultra Fast Diode
Sourced from Process 1P.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
W IV
Working Inverse Voltage
70
V
IO
Average Rectified Current
200
mA
IF
DC Forward Current
600
mA
if
Recurrent Peak Forward Current
700
mA
if(surge)
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
1.0
2.0
-55 to +150
A
A
°C
150
°C
Tstg
TJ
Operating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max
Units
BAV99
350
2.8
357
mW
mW/°C
°C/W
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
BV
Breakdown Voltage
I R = 100 µA
IR
Reverse Current
VF
Forward Voltage
CO
Diode Capacitance
VR = 70 V
VR = 25 V, TA = 150°C
VR = 70 V, TA = 150°C
I F = 1.0 mA
I F = 10 mA
I F = 50 mA
I F = 150 mA
VR = 0, f = 1.0 MHz
2.5
30
50
715
855
1.0
1.25
1.5
µA
µA
µA
mV
mV
V
V
pF
TRR
Reverse Recovery Time
6.0
nS
VFM
Peak Forward Voltage
I F = IR = 10 mA, IRR = 1.0 mA,
RL = 100Ω
I F = 10 mA, tr = 20 nS
1.75
V
70
V
Typical Characteristics
150
Ta= 25°C
140
130
120
110
1
2
3
5
10
20 30
50
I R - REVERSE CURRENT (uA)
400
350
300
250
225
3
5
10
20
30
IFIF - FORWARD CURRENT (uA)
50
250
200
150
100
50
0
10
100
20
30
50
VR - REVERSE VOLTAGE (V)
70
100
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 0.1 to 10 mA
VVFF - FORWARD VOLTAGE (mV)
VVFF - FORWARD VOLTAGE (mV)
485
Ta= 25°C
450
2
300 Ta= 25°C
100
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1.0 to 100 uA
1
1N4150 MMBD1201 1205
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 10 to 100 V
IR - REVERSE CURRENT (nA)
VRR - REVERSE VOLTAGE (V)
V
50
0
05
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 1.0 to 100 uA
725
Ta= 25°C
700
650
600
550
500
450
0.1
0.2 0.3 0.5
1
2
3
5
IF - FORWARD CURRENT (mA)
10
BAV99
High Conductance Ultra Fast Diode
(continued)
Typical Characteristics (continued)
1.5
1.4
CAPACITANCE vs REVERSE VOLTAGE
VR - 0.0 to 15 V
Ta= 25°C
1.3
CAPACITANCE (pF)
VFF - FORWARD VOLTAGE (V)
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 10 - 800 mA
1.2
1
0.8
0.6
10
20
30
50
100
200 300
IF - FORWARD CURRENT (mA)
1.1
1
500
Ta= 25°C
3
2.5
2
1.5
20
30
40
50
REVERSE CURRENT (mA)
60
IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms
2
4
6
8
10
REVERSE VOLTAGE (V)
500
IR
400
-F
OR
WA
R
300
200
100
0
0
DO-35 Pkg
300
SOT-23 Pkg
200
100
0
0
D
CU
R
RE
NT
ST
EA
D
50
100
150
TA - AMBIENT TEMPERATURE ( o C)
POWER DERATING CURVE
400
12
Y
Io - A
ST
VERA
AT
GE R
E
ECTIF
-m
IE D C
A
URR
E NT
- mA
500
P
PDD - POWER DISSIPATION (mW)
1
10
0
Average Rectified Current (Io) &
Forward Current (I F) versus
Ambient Temperature (TA)
PD - POWER DISSIPATION (mW)
4
3.5
Ta= 25°C
1.2
REVERSE RECOVERY TIME vs REVERSE CURRENT
TRR - IR 10 mA vs 60 mA
REVERSE RECOVERY (nS)
BAV99
High Conductance Ultra Fast Diode
50
100
150
IO - AVERAGE TEMPERATURE ( oC)
200
14 15
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