Intoducforn to Mos CoPa iho r
semiconduefoy
oSVbS4T4etss)
(8uIK
os
Bo
BIK
Bts-s)
tox
M
S
asios
Cmos
Taunsto nducdante ( MosFer)>TsT
sent
the
in
oxre.
eapacaPactoy
Mas
deal
or
ASsunphons
oy
condu
y
uito
Pa
Ca
Mos
jdeal
Fs
diagsam
de.
Choss
No oxi
the
in
to
Enessy
come
on the
fo of
ugwited
out
elecen
level
ene
Poe
Seni
(eum
M’ondVcto
hasges
S’ band
Enesgy
C
No
Va
=
Eo
Eo-Ef
wok
dutor
Con
eml
S
=
20,
Eo
24s
qts
Ev
(o)
oxide
Metey
(M)
(sio)
Ee
-
Eo
b
iEo
6e
and
Ei
blw
PoFesmi
difesene
afAnttyaffinitfen}Bal
eletson
Eletson
Z=
=
22.
of
(MoscAP)
u'CaPa
for
oferaton
of
sRegion
Vaxious
MOs
opesajed
M
Rogon
Accumulfon
*Aceumulajon
Region
R'gion
+
Deplekon
RegionInyoxsion
be
Can,
egions:
difesent
thyee
opesaton
Capacito
f
o
A
Regibns sMo
Ve
carjer
hase
Majorih
exie potenial
heog
aetumujefed
fot
somebuik
,
ve
aPPIgf e- i t
=
Von
ie
We
iE
we
ande
gte
gate
we =Vog
ve
aP?g
negatve
d
Callea
Tt
f
potenttal
1
in rIen.
cu
no
fruetulee
dan
iS
a
tneduefos)
on
S
c
becomes
utuse
sem'hasges
on
Caprufox
ike
so
Charge
yative
the
tnesome
(he poSiHve
meta Capqctor
plate
thethisCase
hesein
iA
oF
Sfsucuse
one
when
So
have
Side
Chasged
metal
is
ofhes
Should
hgave
the
of
Because
one
Pofentay
of
Plate
th's
*
equib'b Since
ium
w
afpliedb
trat
haveno
&ean
this churges AS
bu|K.
cs
called
s pen
har
to
wny
we
wn
gate aHon.
see
buIk wil what
the mul
tneaccu
thatis goinggae
what
volegels
we
Potental
negtve
.gound
to at
dfe
Cohne
ojl
gene
is
use
QlaB
ByI
i.e
ad
º
+
fo
Sinee
+
bu
the
ince
sen
b<
6
t
g
or
s ailow
ond
Chay
bge4Sio2,
Semt
and6io2 &o
cha
does"not
Posive ype holes
oharged thsough
dtyaited
=negatveig
w
semicoDduefor.
the
in P
bj
of
positv9
them:s3chatged
tanen
interface
sone
Ve ohieh
Plenty
no
e
of-ve
aeowasd
be
have
canotinsylato
havingolesfa holes
mwt
ugn
we
they tnso
wayds tialted
Those.
no.
is
ThLse
flow
Sine
s
It
+
bo'x
tox
Coauen
tox
Cnos
.Rgion
Derletton
|Sio,
Ve6<Vens
ox
tt
++ t t
5
XA
th
late
the
thsesh
Ping into
diesicbld
thnatat
de
ohich
whien
h
andhees
tes
Pusthel
than
matay
aelumuated
to
devel ntesing
on
veeehas9e
io
get
Pand
ex
Rke
!daP)
faxbiaton)
o
holes Csileen
interta).
=L
to (
w
Aegon
tess
the
e
due
at
glon). (due
stasH
.(6eLaUse
benane
battery
e
deveoping
from csio2
capatan
moe
wltm
4ceumwaton
to
eleove
Ve
lag
2i0ed
i0
<
n8aY
deie
auoas
ths
vo
get
The
So
the
whicn
agan
blne
fale
to
to
lsiogholesA
moe,
Lfhelma
box(oc
m
stasß
4
due.
Qs
to depleftd
eLcom
due
is
intes
nsutetor
is
as
sine Föo
iong
there posive out lesons ustharwheh
ue
Stess
qes
incharges
NoS
d ties
po taren SIo
VensVe
t t coUS
Thus
auso thanoFdan cAy
ts
atoms move
s atoms
&nan
-ve
mmobf
tha
plate
een chasge
incsele
wnich
coNt
Canas
the
chaoge
iS
to is
caPaom
<o,
lasty
ohicn
bihed
Paco
As
De
hegion
to Canot
have
meta
tne
masosits
Nons
s Maios'y
belome
Vos inte
ecom har Pustne
HBhar.
we
seres
tagetheSimilariy
Thes we
WN
This
1S
if
is
vol ot
uhen og (sio) NOW
yet,
andSi
oiath
dometon
Chmges
Silten.
S
ujapee
deped
Sio
HHE
del
toy
4
Const
Cai r
vagiobls.
on
aplied
voltae.
dQ
Sleconldurita),
dlekhle
CONS
ffe
wolkeg,
tharge
eyeaftd.
4
heay
bon
to ong
ehasqs
mole
thein
ihange
woltage with
the
how
of
Capatto
mnjaheL
thet otPlate
in
see
s Change
-ve
can
CALitane.
we sCAanges
the
*Hee
wifn
hrahold
beyond
dcease
in
Ragionis
voltage
ton
Invers
ate
the
when
+
O000o
aos
Inesee
slo
beco
aegion
In
mh4e
Aagion qnd
t).
jed cons
defledeputed
oniy
S1,
e
atehasge
+e
ecapallan
Estog
Cmos
tay, A
80,
to
neas de
bo
o
ncseases
&io, (alo,)cafaufoi
dlectu
eglon tne thle not{
V
fo
Vm
detodnes lvta)
>
Vons
sto
Vys
wn
So
VersdePosljed
vense
mo tsease
ineLase
,NO
eonstIn s
we e
we
When
beeomnow
When
So,
0
