Wiley
Advances in Materials Science and Engineering
Volume 2025, Article ID 7134012, 11 pages
https://doi.org/10.1155/amse/7134012
Research Article
Performance Analysis of Sr3SbI3-Based Perovskite Solar
Cell Using SCAPS-1D Software
Monira Khanom Mim
and Sunirmal Kumar Biswas
Department of Electrical and Electronic Engineering, Prime University, 114/116 Mazar Road, Mirpur-1, Dhaka 1216, Bangladesh
Correspondence should be addressed to Sunirmal Kumar Biswas; sunirmalkumar@primeuniversity.edu.bd
Received 27 June 2024; Accepted 25 March 2025
Academic Editor: Joon-Hyung Lee
Copyright © 2025 Monira Khanom Mim and Sunirmal Kumar Biswas. Advances in Materials Science and Engineering published
by John Wiley & Sons Ltd. Tis is an open access article under the terms of the Creative Commons Attribution License, which
permits use, distribution and reproduction in any medium, provided the original work is properly cited.
Perovskite solar cells, a potential renewable energy source, could revolutionize the efciency of traditional photovoltaic cells. Teir
high efciency and low cost of materials and processes outshine commercial silicon or other organic and inorganic solar cells. In
this comprehensive research, we develop inorganic Sr3SbI3 as an absorber material for perovskite solar cells using SCAPS-1D
software. Strontium antimony iodide (Sr3SbI3) holds promise as an absorber material for solar cells due to its potential for high
light absorption and suitable electronic properties. Tis study utilized abundant and environmentally friendly tungsten trioxide
(WO3) as the electron transport layer to maximize the device’s efciency. Copper antimony sulfde (CuSbS2) emerges as
a promising photovoltaic hole transport material for Sr3SbI3-based perovskite solar cells. To further boost device performance, we
scrutinized the efects of absorber and bufer layer thickness, acceptor density, Sr3SbI3 defect density, and interfacial defect
densities at the WO3/Sr3SbI3 and Sr3SbI3/CuSbS2 interfaces. We also explored the infuences of operating temperature, series
resistance, and shunt resistance on the fnal optimized device performance and its capacitance voltage, current density–voltage
(J–V), and quantum efciency (Q-E) properties. Te Sr3SbI3–based solar cell exhibited the highest power conversion efciency
(PCE) at 30.51% with Voc 1.078 V, Jsc 35.03 mA/cm2, and FF 80.81%. Te designed Sr3SbI3–based solar cell outputs will be efcient
for the convenient fabrication of the perovskite solar cell.
1. Introduction
Undertaking signifcant adjustments to our energy infrastructure is necessary to address pollution, climate
change, and energy insecurity. Large-scale renewable energy
plans, primarily utilizing solar, wind, and water resources,
have been proposed in numerous studies conducted over the
past decade [1–5]. Te annual sustainable renewable solar
energy supply that the emerging continents receive is more
than 30 times greater than the planetary coal reserves and
ffteen thousand times larger than the current global energy
consumption [1]. Tis has led to a signifcant increase in
interest in photovoltaic (PV) technology, particularly among
academic and business leaders, who are pivotal in its advancement [5]. Solar cells have seen signifcant advancements in recent years, with perovskite materials emerging as
a prominent technology due to their high efciency and
tunable properties. Two primary types of perovskite solar
cells are A3BX3 and ABX3, each with distinct structural and
performance characteristics. Comparing A3BX3 and ABX3
types reveals that while both ofer high efciency, their
structural diferences lead to stability and operational performance variations. For instance, ABX3 perovskites generally show better stability under environmental stress, but
A3BX3 materials may ofer advantages in specifc applications due to their unique electronic properties. Perovskite
solar cells from the A3MX3 group have lately been one of
these materials to watch; they have some exciting properties
that make them an excellent choice for solar energy conversion applications [6–9]. A3BX3 perovskite materials,
where A is typically a sizeable organic cation and B is a metal
cation, exhibit a unique structural arrangement that infuences their PV properties. Tese materials generally ofer
high absorption coefcients and favorable charge transport
characteristics. In addition, among the materials in this
group, A3MX3 is notable for being a direct bandgap material
that is also Pb-free. It ofers mechanical and structural
stability and superior optical properties [10]. Recently, novel
inorganic Sr3SbI3 perovskite, one of the A3BX3 type perovskites, has drawn much interest in solar technology [11].
Due to its remarkable compositional stability, inorganic
Sr3SbI3 perovskites can signifcantly advance the development of solar cells [7]. Its tunable band gap (∼1.31 eV) and
enhanced heat stability have drawn much interest in recent
years from inorganic halide perovskites looking to use it in
high-efciency tandem solar cells [12]. Te bandgap of
a material is pivotal in determining the power conversion
efciency (PCE) of solar cells. It considerably afects charge
carrier generation and light absorption, making it a critical
feature in enhancing solar cell performance [13, 14]. It has
been claimed that doping and grainization reduction can
stabilize halide perovskite in the black phase by utilizing
surface energy or altering the tolerance factor [15]. In addition, doping with host lattices is a widely used method that
modifes the perovskite lattice structure and improves PV
performance by introducing strontium antimony iodide
(Sr3SbI3). Doping is typically paired with various electron
transport layers (ETLs) and the absorber [16–18]. Metalhalide perovskites have exhibited signifcant potential in the
application of PV cells [19].
TiO2 has been a popular electron transport material in
PV solar cells (PSCs) up until now. While it produced good
results, it also had certain disadvantages, such as early deterioration under continuous UV light and oxygen vacancies
that would activate surface traps. Terefore, it is necessary to
synthesize new ETL layer material [20]. Tungsten trioxide
(WO3) has received recognition for its exceptional qualities.
WO3 thin flms have already been produced and documented in several other publications. Its characteristics, such
as its adjustable bandgap (2.6–3.5 eV), allow it to absorb light
in the visible spectrum at a wavelength of 475 nm [21]. It
competes fercely with the traditional TiO2 layer in the
visible spectrum, with a notable transmittance of 80% [22].
Furthermore, WO3 exhibits n-type semiconductor characteristics and excellent conductivity on the order of 10−3/
Ω-cm [23]. WO3 has good electron mobility, and during its
fabrication and processing, the density of states and Fermi
level can be tuned by controlling the oxygen content. Also,
WO3 is easily fabricable and cost-efcient [24]. According to
recent studies, scholastic analysts have found that
perovskite-based cells have the highest efciency, greater
than 20% [25]. A challenge associated with these cells is the
need to use expensive Spiro-OMeTAD due to unclear
synthesis procedures or high-purity requirements such as
HTL [26]. An extra HTL in these solar cells may be suggested
as an organic Spiro-OMeTAD substitute. As a new material
of p-type for use in solar cell architecture, thin flms of
copper-based chalcogenide compounds represented by the
relation CuaBXb (where X � S, Te, Se, and B � Bi, Sb, Sn) are
being actively investigated [27, 28]. Copper antimony sulfde
(CuSbS2) was selected due to its abundant and available
Advances in Materials Science and Engineering
material and high open circuit voltage of about 988 mV [29].
Te earth-abundant CuSbS2 is a promising solar absorber
and hole transport layer material due to its high optical
absorption coefcient and low cost. CuSbS2–based solar cells
can be fabricated in a vacuum-free environment [30].
CuSbS2 is among the most abundant and cost-efective
sulfates [31]. In contrast to CuInS2, CuSbS2 has a straight
bandgap of around 1.5 eV. Furthermore, the antimony (Sb)
component has an ionic radius that is similar to indium (In)
but more conservative [32].
In this simulation, we introduce the ITO/WO3/Sr3SbI3/
CuSbS2/Au perovskite solar cell. During this simulation,
a total efciency of 30.51% was gained. Tis perovskite solar
cell can be used for its high efciency.
2. Numerical Simulation and
Parameters of Materials
Te University of Gent created the window application
program SCAPS using the national instrument’s lab windows and CVI. Te application is divided into multiple
panels where the user can adjust the parameters or see the
results of calculations [33]. Te recombination profles,
electric feld distribution, carrier transport method, and
individual current densities are all explained by the model’s
physics as analyzed by SCAPS [34, 35]. Te following are the
electron and hole continuity equations:
1 dj
d
−􏼠 􏼡 n − Un + G � n ,
dt
q dx
(1)
dp
1 djp
− Up + G � .
−􏼠 􏼡
dt
q dx
Jn and Jp are electron and hole current densities, and G is
the generation rate. Te Poisson equation is
d2
e
ρ(x) − n(x) + ND − NA + ρP ρn 􏼁,
2 ψ(x) �
ϵo ϵr
dx
(2)
where ψ is the electrostatic potential, e is the electrical
charge, εr is the relative, and ε0 is the vacuum permittivity,
and p and n are the concentrations of holes and electrons,
respectively, NA and ND are the charge impurities of the
acceptor and donor types, and ρP and ρn are the distributions
of holes and electrons [36]. SCAPS is potent software for
performing solar cells, and a description of the program and
its algorithms is found in the literature and its user manual
[37–40].
For this, the ITO/WO3/Sr3SbI3/CuSbS2/Au–based PSC
schematic diagram is shown in Figure 1.
Table 1 shows the material parameter used in the
SCAPS-1D simulation for each layer [15, 41–43].
Te proposed energy band diagram for the ITO/WO3/
Sr3SbI3/CuSbS2/Au–based perovskite solar cell was executed
using the SCAPS-1D program. Te energy band diagram is
shown in Figure 2.
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2
Light
Light
Light
ITO
WO 3
Sr 3Sbl 3
CuSbS 2
Gold
Figure 1: Schematic diagram of the proposed solar cell.
3. Result and Discussion
3.1. Efect of Absorber and Bufer Layer Tickness.
Figure 3(a) shows the impact of absorber layer thickness on
the proposed perovskite solar cell parameters. Here, the
thickness was varied from 0.5 μm to 3 μm to fnd the optimum absorber layer thickness for this solar cell. Here, the
efciency grows from 29.29% to 30.51% and from 0.5 μm to
1.5 μm due to the increased exciton generation [44].
However, after 1.5 μm, it is observed that the efciency
gradually decreased. It occurred because of the rise in recombination and reduction of the lifetime of the charge
carrier in the perovskite layer [45]. Te fll factor also decreases with the increase in thickness. Te electric feld
heavily infuences the fll actor, and as the forward bias
increases, the electric feld in the absorber diminishes. As
a result, fewer carriers will be collected, which the electric
feld helped to facilitate. Here, Voc decreases because of the
increased recombination of the thicker absorber layer.
Short-circuit current increases by increasing absorber
thickness. Tis is due to increased spectral response at the
longer wavelengths by increasing the thickness [44]. For this
reason, the optimized thickness of the absorber layer
(1.5 μm) was gained where Voc � 1.077 V, Jsc � 35.03 mA/
cm2, FF � 80.82%, and PCE � 30.51%.
Figure 3(b) demonstrates the efect of the bufer layer
thickness on perovskite solar cell parameters. Te ETL layer
thickness is varied from 0.01 μm to 0.05 μm. It shows that all
the parameters are slightly reduced but almost constant. Te
reduction is negligible, indicating that the ETL thickness’s
efect on the perovskite solar cell’s electrical characteristics is
relatively small [46]. For this simulation, 0.02 μm was the
optimized value, where Voc � 1.077 V, Jsc � 35.03 mA/cm2,
FF � 80.82%, and PCE � 30.51%.
3.2. Efect of Acceptor Concentration and Defect Density on the
Absorber Layer. Depending on the doping type, the materials might be either acceptor or donor type [47–49].
Figure 4(a) shows the efect of the doping density of the
3
absorber layer on the PCE of the proposed solar cell. Here,
the doping concentration of the absorber layer is varied from
1E15 cm−3 to 1E19 cm−3 with a variation of absorber layer
thickness from 0.5 μm to 3 μm. It is analyzed that all the
parameters except Jsc rise sharply with the increasing Na .
PCE has increased from 29.2% to 33.5%. An increase in the
doping concentration, which results from an increase in the
absorber layer’s conductivity and internal electric feld,
causes this improvement in device performance [50].
Defect density, which is unavoidable for any material,
signifcantly impacts PSC’s stability [51]. Figure 4(b) shows
the infuence of the absorber layer’s defect density with
thickness variation on efciency. Here, the defect varies from
1E10 cm−3 to 1E16 cm−3. Absorber layer thickness is varied
from 0.5 μm to 3 μm. It is observed that as the defect increases, the efciency drops signifcantly. Here, for an optimized thickness of 1.5 μm, efciency decreases from
33.56% to 20.4% with the increase of defect. Shorter carrier
lifetimes result from reduced efective carrier mobility
brought on by a rise in defect density, making additional
traps and recombination paths available [52]. Defects must
occur in all materials due to the possibility of achieving high
efciency at low defect concentrations [53]. For this reason,
we chose 1E12 cm−3 for our absorber layer defect density.
3.3. Efect of Series and Shunt Resistance. Series and shunt
resistance are important factors that afect the performance of
solar cells. As a result, a low Rshunt might have an impact on the
collected photocurrent as well as photovoltage loss. Rseries
primarily infuences the FF and short-circuit current values in
parallel. It is often recognized that to exhibit extremely efcient
devices, a low Rseries and a high Rshunt must be achieved [54]. Te
following formula is utilized in a frst, broadly applicable
method to comprehend the efects of Rshunt and Rseries on the
optimal single-diode gadget performance [55].
M
I � IL − I0 􏼔e((q(m))/(AkB T)) − 1􏼕 − 􏼠
􏼡,
RShunt
(3)
where M � V + S, S � I ∗ Rseries , IL is the light-induced current,
I0 is the reverse saturation current of the diode, A is the ideality
factor, kB is Boltzmann constant, T is temperature, and q is the
charge of the electron. Figure 5 shows the series and shunt
resistance efect on the solar cell parameters. For this SCAPS
simulation, Rs was varied from 0 to 5 Ω-cm2 and Rsh 1E1 to
1E7 Ω-cm2. Here, for series resistance, both FF and efciency
rapidly dropped with the increasing resistance. FF quickly drops
from 80.81% to 65.77%. PCE drops from 30.51% to 24.83%. It is
noticeable that both Voc and Jsc variations are unnoticeable. For
shunt resistance variation, resistance was varied between 1E1
and 1E7 Ω-cm2. All the parameters are improved with the
variation. It is noticeable that there is not much efect on the
short-circuit current [54].
3.4. Current Density–Voltage (J–V) and Quantum Efciency
(Q-E) Characteristics of the Proposed Solar Cell. Te device’s
J–V characteristics are displayed in Figure 6 with the absorber layer thickness varying between 0.25 μm and 3 μm. At
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Advances in Materials Science and Engineering
Advances in Materials Science and Engineering
Table 1: Materials parameters.
Material parameter
Tickness (μm)
Band gap (eV)
Electron afnity (eV)
Dielectric permittivity (relative)
CB efective density (cm−3)
VB efective density (cm−3)
Electron thermal velocity (cm/s)
Hole thermal velocity (cm/s)
Electron mobility (cm2/V-s)
Hole mobility (cm2/V-s)
Donor density ND (cm−3)
Acceptor density NA (cm−3)
Total defect density (cm−3)
ITO
0.1
3.5
4
9
2.2 × 1018
1.8 × 1019
1 × 107
1 × 107
20
10
1 × 1021
0
1 × 1015
Sr3SbI3
1.5
1.31
4
5.4
1.2 × 1019
2.4 × 1019
1 × 107
1 × 107
100
50
0
1 × 1017
1 × 1012
WO3
0.02
2.6
3.8
4.8
2.2 × 1021
2.2 × 1021
1 × 107
1 × 107
30
30
6.35 × 1017
0
1 × 1015
CuSbS2
0.3
1.58
4.2
14.6
2.2 × 1018
2.2 × 1019
1 × 107
1 × 107
49
49
0
1 × 1018
1 × 1015
4.5
4.0
3.5
ITO
Energy (eV)
3.0
2.5
Sr3Sbl3
2.0
CuSbS2
WO3
1.5
EC
1.0
0.5
0.0
−0.5
−1.0
0.00
EV
0.25
0.50
0.75
1.00
Position (μm)
1.25
1.50
1.75
Figure 2: Energy band diagram of the proposed perovskite solar cell.
1.5 μm, the maximum PCE was increased by 30.51%.
Concurrently, there was an 82.58% gain in Voc , Jsc , and FF
and a 1.089 V gain in 32.56 mA/cm2. According to earlier
research, the current density progressively dropped as the
voltage rose [56]. Efciency increases in tandem with
thickness, as the J–V curve shows. Te accumulation of
electron-hole pairs with increased active layer thickness is
the cause of that [36].
Te ratio of carriers collected by the solar cell to photons
incident on the solar cell at a specifc energy is known as Q-E
[57]. Te proposed solar cell’s Q-E curve is depicted in
Figure 7. Te absorber layer thickness is adjusted from
0.25 μm to 3 μm, afecting the Q-E curve. As thickness grows,
the curve is shown to rise at longer wavelengths. For an
optimal absorber layer thickness of 1.5 μm, it has been
discovered that Q–E has fallen from 100% to 0% between
790 nm and 950 nm.
3.5. Efect of Temperature. Figure 8 shows the efect of
temperature on the device’s parameters; for this simulation,
the temperature was varied from 300 K to 400 K with
absorber layer thickness variation from 0.5 μm to 3 μm. Te
graph illustrates that both Voc and efciency are decreased
from 1.08 V to 0.98 V and 30.51% to 27.3% for optimum
thickness. Short current remains constant during variation.
Tere is a noticeable change in the fll factor. It is observed
that FF rises from 300 K to 375 K, then decreases to 400 K.
Te operating temperature signifcantly afects a solar cell’s
efciency [58]. Since fewer free electrons and holes are
accessible at higher temperatures, the rate of electron and
hole recombination increases [59]. For this signifcant
reason, PCE drops rapidly.
3.6. Efect of Interface Defect Density. Table 2 shows the
interface defect density for the device [60]. Optimizing
interface defect density will aid in better charge–carrier
transport in the material since interface faults impede charge
transport. Figure 9 shows the efect of interface defect
density on the proposed perovskite solar cell. In this simulation, the ETL or WO3/absorber layer and the absorber/
HTL or CuSbS2 interface varied from 1E10 cm−3 to
1E16 cm−3. Trough simulation, it is observed that interface
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4
0.5
1.0
1.5
5
2.0
2.5
3.0
0.01
30.42
31.68
30.03
30.80
0.02
0.03
0.04
0.05
PCE (%)
29.92
29.64
29.25
PCE (%)
82.28
Fill factor (%)
81.60
29.04
82.65
FF (%)
81.70
80.75
80.92
80.24
79.80
36.0
34.71
35.5
33.82
Jsc (mA/cm2)
35.0
32.93
Jsc (mA/cm2)
32.04
1.09
Voc (V)
34.5
34.0
1.08
Voc (V)
1.2
1.1
1.07
1.0
1.06
0.5
1.0
1.5
2.0
2.5
Absorber layer thickness (μm)
0.9
3.0
0.01
(a)
0.02
0.03
0.04
0.05
Buffer layer thickness (μm)
(b)
Figure 3: (a) Impact of variation of absorber layer thickness on solar cell performance parameters. (b) Impact of variation of bufer layer
thickness on solar cell performance parameters.
PCE
1E + 18
33.58
1E + 16
32.91
1E + 15
32.23
31.56
30.88
1E + 17
30.21
29.53
1E + 16
28.86
28.18
1E + 15
0.5
1.0
1.5
2.0
2.5
Absorber layer thickness (μm)
3.0
(a)
Absorber defect density (cm−3)
Acceptor density (cm−3)
1E + 19
PCE
33.70
31.97
30.25
1E + 14
28.52
1E + 13
26.80
25.07
1E + 12
23.35
1E + 11
21.63
19.90
1E + 10
0.5
2.5
1.0
1.5
2.0
Absorber layer thickness (μm)
3.0
(b)
Figure 4: (a) Impact of variation of absorber layer acceptor density on solar cell efciency. (b) Impact of variation of absorber layer defect
density on solar cell efciency.
defects negatively afect efciency. Figure 9(a) shows the
WO3/absorber layer interface, where PCE drops from
30.51% to 23.6% for 1.5 μm as the optimized thickness.
Figure 9(b) shows the absorber/CuSbS2 interface, where PCE
drops from 30.51% to 23%. It can be observed that efciency
decreases rapidly because of heavy interface defect density.
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Advances in Materials Science and Engineering
28.8
36
1E + 07
5
PCE (%)
1E + 06
4
1E + 05
3
1E + 04
2
1E + 03
1
1E + 02
0
30.6
1E + 01
Advances in Materials Science and Engineering
27
27.0
18
25.2
9
PCE (%)
0
80
FF (%)
72
75
54
70
36
65
36.0
35.5
18
39.1
Jsc (mA/cm2)
35.0
FF (%)
36.8
34.5
34.5
Jsc (mA/cm2)
32.2
34.0
1.147
Voc (V)
1.110
0.96
0.72
0.48
5
1E + 07
4
1E + 05
3
1E + 04
2
1E + 03
1
Series resistance (Ω-m2)
1E + 02
0
Voc (V)
0.24
1E + 01
1.036
1E + 06
1.073
Shunt resistance (Ω-cm2)
(a)
(b)
Figure 5: (a) Impact of variation of series resistance on solar cell performance parameters. (b) Impact of variation of shunt resistance on
solar cell performance parameters.
30
80
QE (%)
Current density J (mA/cm2)
100
20
60
40
20
10
0
0.0
0
300
0.2
0.4
0.6
Voltage (V)
0.8
1.0
Absorber layer thickness (μm)
0.25 μm
0.5 μm
1 μm
1.5 μm
2 μm
2.5 μm
3 μm
Figure 6: Current density–voltage (J–V) characteristics of diferent
absorber layer thicknesses.
Defects cause charge carriers to form recombination centers,
which lowers current density and efciency [61]. For this
reason, the highest efciency interface defect density should
be < 1E11 [60] and thickness 1.5 μm.
400
500
600
700
800
Wavelength λ (nm)
900
1000
Absorber layer thickness (μm)
0.25 μm
0.5 μm
1 μm
1.5 μm
2 μm
2.5 μm
3 μm
Figure 7: Quantum efciency (Q-E) characteristics of diferent
absorber layer thicknesses.
3.7. Capacitance–Voltage (C–V) and Mott–Schottky (MS)
Characteristics. A popular and powerful tool for determining the built-in potential (Vbi), or the diference
between an electrode’s operational functions and its doping
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6
7
VOC
400
1.070
1.029
1.009
340
0.9881
0.9678
320
0.9474
300
0.5
0.9270
1.0
1.5
2.0
2.5
Absorber layer thickness (μm)
3.0
FF
400
34.96
34.61
34.27
360
33.92
340
33.58
33.24
320
300
83.92
32.89
32.55
0.5
1.0
1.5
2.0
2.5
Absorber layer thickness (μm)
3.0
PCE
400
30.52
83.49
380
Temperature (K)
Temperature (K)
1.049
360
35.30
380
82.64
360
82.21
340
81.78
81.36
320
80.93
80.50
300
0.5
1.0
1.5
2.0
2.5
Absorber layer thickness (μm)
3.0
29.96
380
83.06
Temperature (K)
Temperature (K)
380
JSC
400
1.090
29.40
28.83
360
28.27
340
27.71
27.15
320
300
0.5
26.58
26.02
1.0
1.5
2.0
2.5
Absorber layer thickness (μm)
3.0
Figure 8: Impact of variation of temperature on solar cell performance parameters.
Table 2: Interface defect parameter of the proposed solar cell device.
Interface defect parameters
Defect type
Capture cross section electrons (cm2)
Capture cross section holes (cm2)
Energetic distribution
Reference for defect energy level Et
Energy with respect to reference (eV)
Total density (integrated over all energies) (cm−2)
ETL/absorber
Neutral
1E19
1E19
Single
Above the highest EV
0.6
1E10–1E16
HTL/absorber
Neutral
1E19
1E19
Single
Above the highest EV
0.6
1E10–1E16
level, is the MS test [62]. Te concentration of occupied
trapping centers is represented by a 1/C2 (V) slope in the MS
plot, and the x-axis intercept typically indicates the Vbi of
organic semiconductor devices [63–65]. Te suggested solar
cells’ C–V characteristics and MS simulation are shown in
Figure 10 as a function of the WO3 structure’s shallow
uniform donor density (Nd ). Tere is a range from 6.35E15
to 6.35E19 cm−3 for the donor density. As seen in
Figure 10(a), the capacitance progressively increases with
applied voltage progressively and peaks at higher voltages. It
has been noted that this structure is depleted at zero bias, as
seen in Figure 10(a). Te depletion width approaches a value
about equal to the absorber layer thickness when the forward
bias is applied at a voltage of roughly 0.5 V. Consequently,
the capacitance grows in tandem with the forward bias
voltage [55] Te capacitance value will rise as doping increases because of the charge that forms at the interface [66].
According to the MS relation, in Figure 10(b) the built-in
potential (Vbi ) value is at 1/C2 � 0 on the associated potential
axis [67]. Te formula is given as [68]
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Advances in Materials Science and Engineering
Advances in Materials Science and Engineering
PCE
30.52
29.45
1E + 15
28.38
1E + 14
27.31
1E + 13
26.24
25.17
1E + 12
24.10
1E + 11
1E + 10
23.03
21.96
0.5
1.0
1.5
2.0
2.5
Absorber layer thickness (μm)
(a)
PCE
1E + 16
Absorber/HTL interface defect (cm−3)
ETL/absorber interface defect (cm−3)
1E + 16
29.41
1E + 15
28.31
1E + 14
27.20
1E + 13
26.09
24.98
1E + 12
23.88
1E + 11
1E + 10
3.0
30.52
22.77
21.66
0.5
1.0
1.5
2.0
2.5
Absorber layer thickness (μm)
(b)
3.0
Figure 9: (a) Impact of variation of ETL/absorber interface defect on solar performance efciency. (b) Impact of variation of absorber/HTL
interface defect on solar performance efciency.
0.18
110
0.16
100
0.14
1/C2 (cm2/μm)2
C (nF/cm2)
120
90
80
70
0.12
0.10
60
0.08
50
0.06
0.0
0.2
0.4
Voltage (V)
0.6
0.8
0.0
0.2
0.4
Voltage (V)
0.6
0.8
Donor density of ETL
Donor density of ETL
6.35E15 cm−3
6.35E15 cm−3
6.35E16 cm−3
6.35E16 cm−3
6.35E17 cm−3
6.35E17 cm−3
6.35E18 cm−3
6.35E18 cm−3
6.35E19 cm−3
6.35E19 cm−3
(a)
(b)
Figure 10: (a) Capacitance–voltage (C–V) characteristics curve of the proposed solar cell (b) Mott–Schottky characteristics of the proposed
solar cell.
1 2 Vbi − V􏼁
�
,
C2 qƐƐo A2 Nd
(4)
where V � applied voltage, Vbi � built-in potential, A � area,
C � capacitance, Nd � donor density, ε � the semiconductor’s permittivity, and Ɛ0 � free-space permittivity.
4. Conclusion
Tis research investigates noble perovskite solar cell structure as ITO/WO3/Sr3SbI3/CuSbS2/Au using SCAPS-1D
simulation software. Tis research studied absorber layer
thickness, bufer layer thickness, acceptor concentration,
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8
defect density of absorber layer, series resistance, shunt
resistance, and interface defect density to get the optimized
value. Furthermore, Q-E and J–V were investigated for the
device. After simulation, the optimum value of absorber
layer thickness, 1.5 μm, NA 1E17 cm−3, and Nt 1E12 cm−3,
was gained. It is observed that at 300 K, the device performs
at its highest level. Interface defect density for ETL/absorber
and absorber/HTL was gained (1E10 cm−3) for maximum
PCE. C–V and M-S curves were also analyzed based on
donor density. After simulation, PCE 30.51%, Voc 1.078 V,
Jsc 35.03 mA/cm2, and FF 80.81%, and Q-E ≥ 90% in the
range of 300–950 nm of AM1.5G spectra were gained as
optimized values. Overall, this PSC is observed as a highefciency, green, and stable heterojunction cell.
Data Availability Statement
Te data that support the fndings of this study are available
from the corresponding author upon reasonable request.
Conflicts of Interest
Te authors declare no conficts of interest.
Funding
Tis research received no external funding.
Acknowledgments
Te authors would like to thank Dr. Marc Burgelman and his
colleagues at the Department of Electronics and Information
Systems (ELIS), University of Gent, Belgium, for providing
the SCAPS simulation package.
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