Ver. 1.0
800G DR4 Diff. TFLN PIC
P/N: LB-33542X1XX
(Ver. 1.0)
1. GENERAL DESCRIPTION
The chip is an 800G DR4 differential Mach-Zehnder (MZ) modulator based on thin-film lithium
niobate (TFLN) technology. It is designed to operate at a modulation speed of up to 224 Gbps
per channel, making it suitable for high-speed data center communication systems.
This chip consists of five spot size converters (SSCs) with a mode field diameter of 9 μm, one
1x4 optical power splitter, four differential modulators, four thermal phase shifters, four surfacemounted monitor PDs for MZ automatic bias control (ABC), and one surface-mounted monitor
PD for packaging and laser power control at the input side.
The detailed structure and block diagram are shown in the Appendix 1.
2. CHANGE NOTES FOR SPECIFICATION
Date
Sep. 05, 2024
Ver.
1.0
Remarks
Issued the preliminary spec
Confirmation of I/O port locations and performance specifications
3. ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Temperature
Condition
Note 1
Note 1
Note 1
Note 1
1
2 Operating Temperature
3 Storage Relative Humidity
4 Operating Relative Humidity
5 RF Input Power
Vpp
6 RF Swing Voltage
7 Heater Bias Voltage
8 Heater Bias Current
9 Optical Input Power
10 Maximum MPD Reverse Voltage
Note 1: Ambient temperature and humidity limits conform to GR-468
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Min.
-40
-20
5
10
–
-2.5
–
–
–
0
Max.
85
80
90
85
18
2.5
4
20
20
20
Units
°C
°C
%
%
dBm
V
V
mA
dBm
V
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4. SPECIFICATIONS
4.1 OPTICAL SPECIFICATIONS (Tc = 25°C)
1
Parameter
Operating Wavelength
2
Optical Insertion Loss
3
4
5
Condition
Min.
1304.5
Typ.
1310
Max.
1317.5
Units
nm
–
–
12
dB
22
–
–
dB
–
–
-26
dB
–
9
–
μm
With lens fiber of 9 μm MFD
Note 2
On/Off Extinction Ratio Tested with thermal phase
shifter
Optical Return Loss
With index matching fluids
Input and Output Mode
Field Diameter
Note 2: Includes 9 μm lens fiber coupling loss of 2x2 = 4 dB, chip loss of 2 dB and power splitter intrinsic
loss of 6 dB
4.2 ELECTRICAL SPECIFICATIONS (Tc = 25°C)
Parameter
Half-wave voltage (V)
Condition
50 kHz signal, Note 3
Min.
–
Typ.
–
Max.
6
Units
V
2
3 dB Electro-Optical
Bandwidth (S21)
3 dB down relative to 1.5
GHz, 2% smoothing, 1601
data points, Note 3
70
–
–
GHz
3
P at heater
Note 3
–
–
20
mW
4
Differential RF
Impedance
Differential Terminal
Load Resistance
Heater load Resistance
–
70
_
Ohm
–
70
–
Ohm
–
220
–
Ohm
–
–
-10
dB
Min.
–
Typ.
5
Max.
–
Units
%
3
3.3
5
V
1
5
6
7
Electrical Return Loss
(S11)
100 MHz ≤ f ≤ 50 GHz
Note 3: Testing wavelength is 1310 nm
4.3 ELECTRO-OPTICAL SPECIFICATIONS OF MPD (Tc = 25°C)
2
Parameter
Input and Output MPD
splitting ratio
Operating Voltage
3
Responsivity
–
0.9
–
A/W
4
Monitor Bandwidth
1
–
–
GHz
1
Condition
4.4 DIMENSIONS
Appendix 2 shows the dimensions of the chip.
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Ver. 1.0
5. MARKING
The following information will be marked on the chip.
(1) Company Symbol Mark: LB
(2) Chip Serial Number: AAAAA-Bxxxx-CCCC
AAAAA: Product Item Number (5 digits of figures)
Bxxxx: Wafer Number (B - 1 digits of alphabets, xxxx - 4 digits of figures)
CCCC: Chip Number (4 digits of figures)
6. TEST DATA
Each chip will be supplied with the following test data.
(1) Chip Serial Number
(2) Channel Number
(3) Electro-Optical Bandwidth (Numerical Value, Tc = 25°C)
(4) V Voltage at 50 kHz (RF Input, Numerical Value, Tc = 25°C)
(5) On/Off Extinction Ratio (Use the DC Bias, Numerical Value, Tc = 25°C)
(6) Optical Insertion Loss (Numerical Value, Tc = 25°C)
(7) Typical test curve picture (EO BW, V, DC-ER)
7. HANDLING PRECAUTION
(1) This chip is susceptible to damage from electrostatic discharge (ESD). The minimum
ESD value for HBM is 260V. Appropriate handling precautions against electrostatic
discharge must be taken during handling and testing.
8. STATEMENT
Liobate reserves the right to make changes without further notice to any products or data
herein to improve reliability, function, or design. Information furnished by Liobate is believed
to be accurate and reliable. However, Liobate does not assume any liability arising out of
the application or use of this information, nor the application or use of any product or circuit
described herein, neither does it convey any license under its patent rights nor the rights of
others.
9. Contact information
Email: sales@liobate.com
Address:
Room 102, No.6, Jihuo Road, Huangpu District, Guangzhou, Guangdong, China 510700.
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Ver. 1.0
APPENDIX 1: BLOCK DIAGRAM
Note: MPD - is the cathode of MPD, MPD + is the anode of MPD.
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Ver. 1.0
APPENDIX 2: DIMENSIONS
1
2
3
4
5
6
7
8
9
10
11
Dummy pad
The anode of the MPD1
Dummy pad
Dummy pad
Heater + of CH1
The anode of the MPD2
Dummy pad
Heater + of CH2
The anode of the MPD3
Dummy pad
Heater + of CH3
12
13
14
15
16
17
18
19
20
21
22
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The anode of the MPD4
Dummy pad
Heater + of CH4
Dummy pad
Common cathode for all MPDs
Common cathode for all Heaters
V_DD pad
Dummy pad
Dummy pad
Dummy pad
The anode of the IMPD
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APPENDIX 3: MPD CURRENT CHARACTERISTICS
Note1: The phase of the output MPD is opposite to that of the output optical signal.
Note2: For different chips, the current value of input MPD (IMPD) may be 200-2000uA, which is
due to fabrication error of the input MPD splitter.
<End of Document>
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