Abhinab Mohapatra
+ India
# mabhinab@iisc.ac.in
„ +91-7259875366
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RESEARCH INTEREST
My research bridges the fields of quantum condensed matter physics and advanced materials science, focusing on uncovering novel quantum phenomena and unconventional superconductivity
in topological materials. I employ cutting-edge techniques in solid-state device fabrication, lowtemperature cryogenic measurements, and comprehensive material characterization to explore the
fundamental physics underlying quantum materials and develop potential applications in nextgeneration quantum technologies.
EDUCATION
D.A.V. Public School, PKT
Class X, CBSE,
2012
D.A.V. Public School, PKT
Class XII, CBSE,
2014
Indian Institute of Science
BS, MS in Physics,
2014 – 2019
Coursework: Scientific Computing, Micro and Nano Fabrication, Semiconductor Physics, Crystal and Thin-film growth, etc.
Indian Institute of Science
2019 – 2024
PhD in Physics
Thesis title: Induced p-wave superconductivity in a dual topological insulator BiTe and unconventional superconductivity in a magnetic topological insulator MnBi2 Te4 .
SKILLS
Working in a cleanroom environment
Device Fabrication:
◦ Preparation of 2-D heterostructures through van-der waal epitaxy in Argon atmosphere
using Glove box
◦ Electron-beam Lithography
◦ Reactive ion etching
◦ Wet etching
◦ Thin-film deposition through E-beam evaporation
◦ Atomic force microscopy
◦ Wire-bonding.
Low-temperature Electrical measurement:
◦ Electrical measurements using probe station, and source-meters and nanovoltmeter (Keithley 2400, 2612, 6221, 2182A), and SRS 830 Lock-In Amplifier.
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◦ Low temperatures are achieved using Quantum Design PPMS-14T (2 K), Oxford 2 K Liquid
helium Refrigerator, and Closed-cycle Dilution Refrigerator (30 mK).
Analysis and Interfacing:
◦ Data analysis using MATLAB, Origin, and Python.
◦ Instrument interfacing using LabVIEW.
Crystal growth and characterization:
◦ Chemical vapor transport (CVT) using dual-zone furnace
◦ Vertical Bridgman technique
◦ Physical vapor deposition (PVD)
◦ X-ray diffraction (XRD)
◦ Scanning Electron Microscopy (SEM)
PUBLICATIONS
Restoring superconductivity in the quantum metal phase of NbSe2
using dissipative coupling
Here, we demonstrate that dissipative coupling can fully suppress the anomalous Bose metal phase in NbSe2 , restoring a zero-resistance superconducting
state. These findings confirm the quantum mechanical origin of the Bose
metal phase and highlight the role of dissipation in controlling quantum
phases in 2D superconductors.
Nano Letters 2019 19 (3), 1625-1631 2
2019
Crossover from gapped-to-gapless Dirac surface states in magnetic
topological insulator MnBi2 Te4
This study on MnBi2 Te4 provides a detailed examination of the interplay
between magnetism and topological surface states, demonstrating a transition from gapped to gapless Dirac surface states across the Néel temperature
through the manifestation of weak anti-localization.
J. Phys.: Condens. Matter 36 085703 2
2023
“p-wave superconductivity at the dual topological insulator/s-wave
superconductor interface”
This study presents strong evidence for anisotropic p-wave superconductivity at the BiTe/NbSe2 heterojunction, observed through electrical transport
measurements and differential conductance spectra. The Blonder-TinkhamKlapwijk (BTK) analysis reveals two distinct superconducting gaps, one with
anisotropic p-wave and the other with isotropic s-wave symmetry, both of
which evolve under varying magnetic fields and temperatures, supporting
the presence of proximity-induced unconventional superconductivity at the
interface.
Accepted in Physical Review B 2
2024
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“Emergent p-wave superconductivity in a dual topological insulator BiSe via superconducting proximity effect”
P-wave superconductivity, crucial for topologically protected qubits, is achieved
in dual topological insulator BiSe via proximity to NbSe2 using van der Waals
epitaxy. Low-temperature conductance measurements reveal a V-shaped
dip characteristic of p-wave superconductivity, confirmed by 2D BlonderTinkham-Klapwijk (BTK) fitting. The analysis shows distinct critical fields
and transition temperatures for the p-wave and s-wave gaps.
ACS Appl. Mater. Interfaces 2025, 17, 5, 8456–8463 2
2025
“Induced anisotropic superconductivity on the surface states of
Magnetic Topological Insulator MnBi2 Te4 ”
The magneto-resistance measurements in the MnBi2 Te4 /NbSe2 junction exhibit superconducting tunneling at low temperatures, characterized by a
sharp negative cusp at low fields that vanishes above 5 K. These results, along
with differential conductance measurements, confirm proximity-induced superconductivity at the interface.
Under Review Physical Review B 2
2024
“Signatures of superconducting proximity effect in the flat-land of
dual topological insulators”
The study reveals multiple signatures of proximity-induced superconductivity in the flat-land region of BiTe and BiSe interfaced with NbSe2 , including
a zero-bias dip or peak and high-bias transition in differential conductance
spectra, both of which diminish with increasing temperature and magnetic
field. These features, observed in both local and non-local measurements,
confirm the induction of superconducting correlations into dual topological
insulators through proximity.
Manuscript under preparation 2
2025
CONFERENCES
“Transition from Gapped-to-gapless Surface States in Magnetic
Topological Insulator”
11th International Conference on Materials for Advanced Technologies (ICMAT) in Singapore, Jun. 2023.
2023
“Proximity-induced p-wave superconductivity in dual topological
insulator BiTe”
13th Bengaluru India Nano 2024 in Bengaluru, Aug. 2024.
“Emergent Superconducting Phenomena at the Magnetic Topological Insulator MnBi2 Te4 /s-wave superconductor NbSe2 Interface”
International Conference on Magnetic materials and Applications (ICMAGMA)
in Bengaluru, Feb. 2025.
2024
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2025
SCHOLASTIC ACHIEVEMENTS
RMO (Regional Mathematics Olympiad)
SILVER MEDALIST in Odisha.
KVPY (Kishore Vaigyanik Protsahan Yojana)
JUNIOR SCIENTIST FELLOWSHIP AWARD
JEE (Joint Entrance Examination (Advanced))
RANK- 1,962 in India
GATE (Graduate Aptitude Test in Engineering)
RANK- 142 in India
2012
2014-2019
2014
2019
ADDITIONAL RESEARCH WORK
“Single crystal growth of FeSe, Fe3 GeTe2 and Co3 Sn2 S2 ”
The single crystals were grown using CVT in a quartz tube sealed in 1e-6
mbar. These single crystals were then characterized using XRD and SEMEDS.
2023
“Growth of Ge2 Sb2 Te5 nanowires”
In this project, we have successfully built a VLS (Vapor-Liquid-Solid) growth
chamber that can grow Ge2 Sb2 Te5 nanowires. These nanowires were then
characterized using Scanning electron microscopy (SEM) and Transmission
electron microscopy (TEM).
2018
“Synthesis and Characterisation of SnO2 and ZnO nanoparticles”
This project aimed to develop a bulk preparation method for SnO2 and ZnO
nanoparticles, enabling the formation of pellets. Tin dioxide was synthesized using the nitrate-citrate gel combustion method, while zinc oxide was
prepared by chemical precipitation, with subsequent analysis of their lattice
parameters, crystal size, and thermal properties through XRD, TGA, and
DTA.
2015
REFERENCES
Prof. P S Anil Kumar (Ph.D. Thesis Advisor)
◦ Address: Department of Physics, Indian Institute of Science, Bangalore-560012, India
◦ Email: anil@iisc.ac.in
◦ Phone Number : +91-80-2293 2632
Prof. R. Ganesan (Ph.D. Thesis Advisor)
◦ Address: Department of Physics, Indian Institute of Science, Bangalore-560012, India
◦ Email: gans@iisc.ac.in
◦ Phone Number : +91-80-2293 3287
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