AIM:
Design and analysis of SOIFET to NMOS.
Setup the Ini al SOI-FET Structure:
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Define the substrate layers: Typically, SOI-FET consists of a thin silicon layer (channel) on top of
an insula ng layer (usually silicon dioxide) and a handle wafer (bulk silicon).
Define regions for the source and drain: These are typically heavily doped n-type regions (for
NMOS).
Gate oxide: The gate oxide is o en a thin SiO₂ layer, and this needs to be specified above the
channel.
Gate contact: Define the metal or polysilicon gate electrode over the gate oxide.
Covert SOI MOSFET to NMOS and meshing:
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Remove the Buried Oxide (BOX): The BOX layer is etched away to expose the silicon layer.
Doping: Introduce n-type dopants into the silicon layer to form the NMOS channel.
Gate Oxide Forma on: Grow or deposit a thin oxide layer on the silicon surface.
Gate Material Deposi on: Deposit polysilicon or metal to form the gate electrode.
Source/Drain Forma on: Implant n-type dopants to form the source and drain regions.
Metalliza on: Create metal interconnects to connect the NMOS transistor to the rest of the c
ircuit.
Simulated of 𝑰𝒅 𝒗/𝒔 𝑽𝒈 of NMOS
Simulated of 𝑰𝒅 𝒗/𝒔 𝑽𝒅 of NMOS
Conclusion:
Conver ng an SOI-MOSFET to an NMOS involves strategic removal of the Buried Oxide layer, ntype doping, forming gate oxide, deposi ng gate material, and finalizing with source/drain forma on
and metalliza on. This results in an NMOS transistor ready for integra on into circuits, leveraging the
advantages of SOI technology while enhancing NMOS-specific characteris cs.