VS-150EBU04
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Vishay Semiconductors
Ultrafast Soft Recovery Diode, 150 A FRED Pt®
FEATURES
1
• Ultrafast recovery time
• 175 °C max. operating junction temperature
2
Cathode
• Screw mounting only
Anode
• Designed and qualified
JEDEC®-JESD 47
according
to
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
PowerTab®
BENEFITS
LINKS TO ADDITIONAL RESOURCES
• Reduced RFI and EMI
• Higher frequency operation
3D 3D
• Reduced snubbing
3D Models
• Reduced parts count
DESCRIPTION / APPLICATIONS
PRIMARY CHARACTERISTICS
IF(AV)
150 A
VR
400 V
VF at IF
0.9 V
trr (typ.)
See recovery table
TJ max.
175 °C
Package
PowerTab®
Circuit configuration
Single
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
MECHANICAL DATA
Case: PowerTab®
Molding compound meets UL 94 V-0 flammability rating
Terminal: nickel plated, screwable
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
400
V
Cathode to anode voltage
VR
Continuous forward current
IF(AV)
TC = 104 °C
150
Single pulse forward current
IFSM
TC = 25 °C
1500
Maximum repetitive forward current
IFRM
Square wave, 20 kHz
300
Operating junction and storage temperatures
TJ, TStg
A
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Breakdown voltage, blocking voltage
VBR, VR
Forward voltage
VF
TEST CONDITIONS
UNIT
S
MIN.
TYP.
MAX.
IR = 200 μA
400
-
-
IF = 150 A
-
1.07
1.3
IF = 150 A, TJ = 175 °C
-
0.9
1.1
IF = 150 A, TJ = 125 °C
-
0.96
1.17
VR = VR rated
-
-
50
μA
TJ = 150 °C, VR = VR rated
-
-
4
mA
V
Reverse leakage current
IR
Junction capacitance
CT
VR = 400 V
-
100
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
3.5
-
nH
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Document Number: 93003
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VS-150EBU04
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
TEST CONDITIONS
trr
Peak recovery current
IRRM
Reverse recovery charge
Qrr
MIN.
TYP.
MAX.
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
-
-
60
TJ = 25 °C
-
93
-
TJ = 125 °C
-
172
-
-
11
-
-
20
-
IF = 150 A
VR = 200 V
dIF/dt = 200 A/μs
TJ = 25 °C
TJ = 125 °C
UNITS
ns
A
TJ = 25 °C
-
490
-
TJ = 125 °C
-
1740
-
MIN.
TYP.
MAX.
-
0.22
0.29
-
0.2
-
-
-
5.02
g
-
0.18
-
oz.
1.2
(10)
-
2.4
(20)
N·m
(lbf · in)
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Thermal resistance,
junction to case
RthJC
Thermal resistance,
junction to heatsink
RthCS
TEST CONDITIONS
K/W
Mounting surface, flat, smooth, and greased
Weight
Mounting torque
Case style PowerTab®
150EBU04
1000
1000
IR - Reverse Current (μA)
IF - Instantaneous Forward Current (A)
Marking device
100
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
10
1
0.2
UNITS
TJ = 175 ˚ C
100
125 ˚ C
10
1
25 ˚ C
0.1
0.01
0.001
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0
100
200
300
400
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
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VS-150EBU04
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CT - Junction Capacitance (pF)
10 000
TJ = 25 °C
1000
100
10
10
100
1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Impedance (°C/W)
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.1
PDM
t1
Single Pulse
(Thermal Resistance)
t2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
.
1
t1 - Rectangular Pulse Duration (s)
180
300
160
250
Average Power Loss (W)
Allowable Case Temperature (°C)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
140
DC
120
100
Square wave (D = 0.50)
Rated VR applied
80
60
RMS Limit
200
150
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D DC
= 0.20
D = 0.50
DC
100
50
see note (1)
40
0
0
50
100
150
200
250
0
50
100
150
200
250
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
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Document Number: 93003
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-150EBU04
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250
Vishay Semiconductors
5000
VR = 200 V
TJ = 125 °C
TJ = 25 °C
IF = 150 A
IF = 75 A
VR = 200 V
TJ = 125
TJ = 25
4500
4000
200
Qrr (nC)
trr (ns)
3500
150
IF = 150 A
IF = 75 A
3000
2500
2000
1500
100
1000
500
0
50
100
100
1000
1000
dIFdt (A/μs)
dIFdt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
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Document Number: 93003
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VS-150EBU04
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
150
E
B
U
04
1
2
3
4
5
6
1
-
Vishay Semiconductors product
2
-
Current rating (150 = 150 A)
3
-
Single diode
4
-
PowerTab® (ultrafast / hyperfast only)
5
-
Ultrafast recovery
6
-
Voltage rating (04 = 400 V)
ORDERING INFORMATION
PREFERRED P/N
VS-150EBU04
QUANTITY PER T/R
25
MINIMUM ORDER QUANTITY
375
PACKAGING DESCRIPTION
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95240
Part marking information
www.vishay.com/doc?95370
Application note
www.vishay.com/doc?95179
Revision: 07-Dec-2021
Document Number: 93003
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Outline Dimensions
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Vishay Semiconductors
PowerTab®
15.90 (0.62)
15.60 (0.61)
11.90 (0.47)
12.40 (0.49)
Lead 1
Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)
Lead 2
4.95 (0.19)
4.75 (0.18)
Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)
5.20 (0.20)
4.95 (0.19)
3.15 (0.12)
3.00 (0.11)
0.60 (0.02)
0.40 (0.01)
5.45 REF.
(0.21 REF.)
39.95 (1.57)
39.55 (1.56)
“G” see note
27.65 (1.08)
27.25 (1.07)
15.60 (0.61)
14.80 (0.58)
1.35 (0.05)
1.20 (0.04)
18.50 (0.73)
17.85 (0.70)
8.80 (0.35)
8.20 (0.32)
4.70 (0.19)
4.50 (0.18)
DIMENSIONS in millimeters (inches)
1.30 (0.05)
1.10 (0.04)
12.20 (0.48)
12.00 (0.47)
Lead assignments
Lead 1 = Cathode
Lead 2 = Anode
Note:
Outline conform to JEDEC® TO-275, except for dimension “G” only
Revision: 10-Jun-2021
Document Number: 95240
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Vishay
Disclaimer
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