N-channel 100 V, 5.1 mΩ typ., 110 A, STripFET™ VII DeepGATE™ Power MOSFETs in TO-220FP and TO-220 packages Datasheet - production data Features Order codes TAB 1 2 3 1 TO-220FP 2 3 VDS RDS(on) max 100 V 0.007 Ω ID PTOT 45 A 30 W 110 A 150 W • Ultra low on-resistance • 100% avalanche tested TO-220 Applications • Switching applications Figure 1. Internal schematic diagram Description These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. ' 7$% * 6 $0Y Table 1. Device summary Marking Package Packaging TO-220FP Tube TO-220 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits .............................................. 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Unit Parameter TO-220FP TO-220 VDS Drain-source voltage 100 V VGS Gate-source voltage ± 20 V ID(1) Drain current (continuous) at TC = 25 °C 45 110 A (1) Drain current (continuous) at TC = 100 °C 32 76 A Drain current (pulsed) 180 415 A Total dissipation at Tc = 25 °C 30 150 W ID IDM(2) PTOT (1) EAS(3) Single pulse avalanche energy TJ Operating junction temperature Tstg Storage temperature 490 mJ °C -55 to 175 °C 1. This value is rated according to Rthj-c. 2. Limited by safe operating area. 3. Starting TJ=25 °C, ID=18, VDD=50 V. Table 3. Thermal resistance Value Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-amb Unit TO-220FP TO-220 5.00 1.00 62.50 °C/W °C/W Electrical characteristics 2 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Max. Unit - V VDS = 100 V 1 µA VDS = 100 V; TC=125 °C 10 µA 100 nA 4.5 V 5.1 7 mΩ Min. Typ. Max. Unit - 5117 - pF - 992 - pF - 39 - pF - 72 - nC - 31 - nC - 16 - nC Min. Typ. Max. Unit - 25 - ns - 36 - ns - 52 - ns - 21 - ns V(BR)DSS Drain-source breakdown voltage (VGS= 0) IDSS Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = 20 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source onresistance ID = 250 µA Min. Typ. 100 2.5 For TO-220FP: VGS= 10 V, ID= 22.5 A For TO-220: VGS= 10 V, ID= 55 A Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS =50 V, f=1 MHz, VGS=0 VDD=50 V, ID = 110 A VGS =10 V Figure 17 Table 6. Switching times Symbol td(on) tr td(off) tf Parameter Test conditions Turn-on delay time Rise time Turn-off delay time Fall time VDD=50 V, ID= 55 A, RG=4.7 Ω, VGS= 10 V Figure 16 Electrical characteristics Table 7. Source drain diode Symbol ISD ISDM(1) VSD(2) Parameter Test conditions Min Typ. Max. Unit Source-drain current: For TO-220FP - 45 A For TO-220 - 110 A Source-drain current (pulsed): For TO-220FP - 180 A For TO-220 - 415 A - 1.2 V Forward on voltage For TO-220FP: ISD = 22.5 A, VGS=0 For TO-220: ISD = 55 A, VGS=0 trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration=300 µs, duty cycle 1.5% ISD = 110 A, di/dt = 100 A/µs, VDD=80 V, Tj=150 °C - 77 ns - 150 nC - 4.3 A Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220FP AM15957v1 ID (A) Figure 3. Thermal impedance for TO-220FP Zth_TOFPDEF K δ=0.5 Tj=175°C Tc=25°C Single pulse 0.05 0.02 0.01 100 10 -2 s ai are n) his RDS(o t n n i max tio ra d by e Op ite Lim 10 100µs 1ms 1 10 -3 Single pulse 10ms 0.1 10 1 0.1 VDS(V) Figure 4. Safe operating area for TO-220 AM15958v1 ID (A) Tj=175°C Tc=25°C Single pulse 10 -4 10 -6 10 -5 10 -3 10 -4 10 -2 10 -1 tp(s) Figure 5. Thermal impedance for TO-220 Zth_280TOL K δ=0.5 100 s ai are n) his RDS(o t n n i max tio ra d by e Op ite Lim 10 100µs 0.05 0.02 0.01 10 -2 1ms 1 Single pulse 10ms 0.1 10 1 0.1 VDS(V) Figure 6. Output characteristics 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 tp(s) Figure 7. Transfer characteristics AM15948v1 ID (A) AM15949v1 ID (A) VGS=8, 9, 10V 350 VDS=2V 300 300 250 7V 250 200 200 6V 150 150 100 100 5V 50 4V 0 0 1 2 3 4 5 6 7 8 VDS(V) 50 0 0 2 4 6 8 VGS(V) Electrical characteristics Figure 8. Gate charge vs gate-source voltage AM15950v1 VGS (V) VDD=50V ID=110A 12 Figure 9. Static drain-source on-resistance for TO-220FP AM15959v1 RDS(on) (mΩ) 5.25 10 5.20 8 5.15 6 5.10 4 5.05 2 5.00 VGS=10V 4.95 0 0 40 20 60 80 Qg(nC) Figure 10. Static drain-source on-resistance for TO-220 AM15960v1 RDS(on) (mΩ) 15 25 35 ID(A) Figure 11. Capacitance variations AM15952v1 C (pF) 6000 VGS=10V 5.3 5 Ciss 5000 5.2 4000 3000 5.1 2000 5.0 1000 4.9 0 20 40 60 80 100 ID(A) Figure 12. Normalized gate threshold voltage vs temperature AM015953v1 VGS(th) (norm) 0 0 Figure 13. Normalized on-resistance vs temperature 2 1.1 1.8 1 1.6 0.9 1.4 0.8 1.2 0.7 1 0.6 0.8 0.5 0.6 25 50 75 100 125 150 AM15954v1 RDS(on) (norm) ID=250µA 1.2 0.4 -75 -50 -25 0 10 20 30 40 50 60 70 80 Coss Crss VDS(V) TJ(°C) 0.4 -75 -50 -25 0 ID=55A 25 50 75 100 125 150 TJ(°C) Electrical characteristics Figure 14. Normalized BVDSS vs temperature AM15955v1 V(BR)DSS (norm) Figure 15. Source-drain diode forward vs temperature AM15956v1 VSD (V) ID=250µA TJ=-55°C 1.1 1.04 1 1.02 0.9 1.00 TJ=25°C 0.8 0.98 0.7 TJ=175°C 0.96 0.94 -75 -50 -25 0 0.6 25 50 75 100 125 150 TJ(°C) 0.5 0 20 40 60 80 100 ISD(A) Test circuits 3 Test circuits Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF VGS 3.3 μF 2200 RL μF IG=CONST VDD VD Vi=20V=VGMAX RG 2200 μF D.U.T. 100Ω D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 19. Unclamped inductive load test circuit Figure 18. Test circuit for inductive load switching and diode recovery times A A D.U.T. FAST DIODE B B AM01469v1 L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 21. Switching time waveform Figure 20. Unclamped inductive waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 10% AM01473v1 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: ECOPACK® is an ST trademark. Package mechanical data Table 8. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Package mechanical data Figure 22. TO-220FP drawing 7012510_Rev_K_B Package mechanical data Table 9. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Package mechanical data Figure 23. TO-220 type A drawing BW\SH$B5HYB7 Revision history 5 Revision history Table 10. Document revision history Date Revision 03-Dec-2012 1 16-Jul-2013 2 Changes Initial release. – Modified: title, IDM value for TO-220 – Added: EAS – Modified: the entire typical values in Table 5 and 6 – Modified: typical and max values in Table 7 – Modified: Figure 16, 17, 18, 19, Table 9 and Figure 23 – Minor text changes