BPV10NF
www.vishay.com
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• High sensitivity
• Daylight blocking filter matched with 850 nm
to 950 nm emitters
• Fast response times
16140-1
• Angle of half sensitivity: . = ± 20°
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
BPV10NF is a PIN photodiode with high speed and high
sensitivity in black, T-1¾ plastic package with daylight
blocking filter. Filter bandwidth is matched with 850 nm to
950 nm IR emitters.
APPLICATIONS
• High speed detector for infrared radiation
• Infrared remote control and free air data transmission
systems, e.g. in combination with TSFFxxxx series IR
emitters
PRODUCT SUMMARY
COMPONENT
Ira (μA)
at Ee = 1.0 mW/cm2, λ = 940 nm, VR = 5.0 V
ϕ (°)
λ0.5 (nm)
60
± 20
780 to 1050
BPV10NF
Note
• Test condition see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
BPV10NF
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
BPV10NF-CS21
Reel
MOQ: 5000 pcs, 1000 pcs/reel
T-1
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Power dissipation
Tamb ≤ 25 °C
SYMBOL
VALUE
UNIT
VR
60
V
mW
PV
215
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
-40 to +100
°C
°C
Storage temperature range
Soldering temperature
Thermal resistance junction to ambient
Rev. 2.1, 26-Jul-2021
Tstg
-40 to +100
t ≤ 5 s, 2 mm from body
Tsd
260
°C
Connected with Cu wire, 0.14 mm2
RthJA
350
K/W
Document Number: 81503
1
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPV10NF
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 50 mA
VF
-
0.85
1.3
V
Breakdown voltage
IR = 100 μA, E = 0
V(BR)
60
-
-
V
Reverse dark current
VR = 20 V, E = 0
Iro
-
0.1
5
nA
Diode capacitance
VR = 0 V, f = 1 MHz, E = 0
CD
-
11
-
pF
Open circuit voltage
Ee
= 1 mW/cm2, λ = 850 nm
VO
-
410
-
mV
Short circuit current
Ee = 1 mW/cm2, λ = 870 nm
IK
-
50
-
μA
Ira
-
55
-
μA
Reverse light current
Ee
= 1 mW/cm2, λ = 870 nm, V
R=5V
Ee
= 1 mW/cm2, λ = 940 nm, V
R=5V
Ira
30
60
-
μA
Temperature coefficient of Ira
Ee = 1 mW/cm2, λ = 870 nm, VR = 5 V
TKIra
-
-0.1
-
%/K
Absolute spectral sensitivity
VR = 5 V, λ = 870 nm
s(λ)
-
0.55
-
A/W
Angle of half sensitivity
ϕ
-
± 20
-
°
Wavelength of peak sensitivity
λp
-
940
-
nm
λ0.5
-
780 to 1050
-
nm
η
-
70
-
%
-
3 x 10-14
-
W/√Hz
Range of spectral bandwidth
λ = 950 nm
Quantum efficiency
Noise equivalent power
VR = 20 V, λ = 950 nm
Detectivity
VR = 20 V, λ = 950 nm
D
-
3 x 1012
-
cm√Hz/W
Rise time
VR = 10 V, RL = 50 Ω, λ = 830 nm
tr
-
80
-
ns
Fall time
VR = 10 V, RL = 50 Ω, λ = 830 nm
tf
-
60
-
ns
NEP
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Axis Title
Axis Title
10000
1000
1
100
0.1
0.01
10
20
40
60
80
100
100
1000
80
1st line
2nd line
100
1st line
2nd line
2nd line
Iro - Reverse Dark Current (nA)
VR = 20 V
10
10000
120
2nd line
Ira rel. - Relative Reverse Light Current (%)
1000
60
100
40
VR = 5 V,
Ee = 1 mW/cm2,
O = 940 nm
20
10
0
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Tamb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 2.1, 26-Jul-2021
Document Number: 81503
2
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPV10NF
www.vishay.com
Vishay Semiconductors
Axis Title
Axis Title
10000
100
100
1
10
0.1
0.01
0.1
10000
90
80
70
1000
60
1st line
2nd line
1000
10
1st line
2nd line
50
40
100
30
20
10
0
1
400
500
600
900
10
1000 1100
λ - Wavelength (nm)
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
Axis0°
Title 10°
10000
1 mW/cm2
20°
10000
30°
10
0.2 mW/cm2
1000
0.1 mW/cm2
0.05 mW/cm2
1
0.02 mW/cm2
100
λ = 950 nm
2nd line
Srel. - Relative Sensitivity
0.5 mW/cm2
1st line
2nd line
2nd line
Ira - Reverse Light Current (μA)
800
Ee - Irradiance (mW/cm2)
Axis Title
100
700
1000
40°
1.0
0.9
50°
0.8
100
60°
70°
0.7
φ - Angular Displacement
2nd line
2nd line
Ira - Reverse Light Current (μA)
VR = 5 V, λ = 940 nm
2nd line
Srel. - Relative Spectral Sensitivity (%)
100
80°
10
0.1
0.1
1
10
10
100
0.6
0.4
0.2
0
VR - Reverse Voltage (V)
1st line
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 7 - Relative Sensitivity vs. Angular Displacement
Axis Title
10000
12
f = 1 MHz
1000
8
1st line
2nd line
2nd line
Cp - Capacitance (pF)
10
6
100
4
2
10
0
0.1
1
10
100
VR - Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Rev. 2.1, 26-Jul-2021
Document Number: 81503
3
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BPV10NF
www.vishay.com
Vishay Semiconductors
5.75 ± 0.15
PACKAGE DIMENSIONS in millimeters
A
(4.4) chip position
C
R2.45 (sphere)
0.8 - 0.1
+ 0.2
0.63 - 0.1
< 0.7
7.6 ± 0.15
8.6 ± 0.3
+ 0.2
+ 0.2
1 - 0.1
1.5 ± 0.25
11.9 ± 0.3
34.9 ± 0.5
Ø 5 ± 0.15
Area not plane
0.5 +0.15
Technical drawings
according to DIN
specifications
2.54 nom.
Drawing-No.: 6.544-5185.01-4
Issue: 2; 11.04.2008
Rev. 2.1, 26-Jul-2021
Document Number: 81503
4
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 91000
1
For technical questions, contact:
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 01-Jan-2024