PolarTM Power MOSFET
HiPerFETTM
IXFB44N100P
VDSS
ID25
=
=
RDS(on) ≤
≤
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
PLUS264TM (IXFB)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
1000
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
1000
V
VGSS
Continuous
± 30
V
VGSM
Transient
± 40
V
ID25
TC = 25°C
44
A
IDM
TC = 25°C, pulse width limited by TJM
110
A
IAR
TC = 25°C
22
A
EAS
TC = 25°C
2
J
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
15
V/ns
PD
TC = 25°C
1250
W
TJ
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TL
1.6mm (0.062 in.) from case for 10s
300
°C
TSOLD
Plastic body for 10s
260
°C
FC
Mounting torque
30..120/6.7..27
N/lb.
10
g
Weight
1000V
44A
Ω
220mΩ
300ns
G
D
(TAB)
S
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
z
Advantages
z
Plus 264TM package for clip or spring
mounting
z
Space savings
z
High power density
Applications
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min.
Typ. Max.
BVDSS
VGS = 0V, ID = 3mA
1000
VGS(th)
VDS = VGS, ID = 1mA
3.5
IGSS
VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
V
6.5
V
± 200 nA
TJ = 125°C
© 2008 IXYS CORPORATION, All rights reserved
z
Switched-mode and resonant-mode
power supplies
z
DC-DC Converters
z
Laser Drivers
z
AC and DC motor controls
z
Robotics and servo controls
50 μA
3 mA
220 mΩ
DS99867A(04/08)
IXFB44N100P
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
gfs
20
VDS = 20V, ID = 0.5 • ID25, Note 1
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
PLUS264TM (IXFB) Outline
35
S
19
nF
1060
pF
41
pF
1.70
Ω
RGi
Gate input resistance
td(on)
Resistive Switching Times
60
ns
tr
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
68
ns
td(off)
RG = 1Ω (External)
90
ns
tf
56
ns
Qg(on)
305
nC
104
nC
126
nC
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
0.10
RthCS
0.13
Source-Drain Diode
TJ = 25°C unless otherwise specified)
°C/W
°C/W
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
44
A
ISM
Repetitive, pulse width limited by TJM
176
A
VSD
IF = IS, VGS = 0V, Note 1
1.5
V
300
ns
trr
QRM
IRM
IF = 22A, -di/dt = 100A/μs
VR = 100V
2.5
μC
17
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFB44N100P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
45
90
VGS = 10V
9V
40
35
70
30
60
8V
ID - Amperes
ID - Amperes
VGS = 10V
9V
80
25
20
15
10
50
40
8V
30
20
7V
5
10
0
7V
0
0
1
2
3
4
5
6
7
8
9
10
11
0
5
10
45
25
30
3.0
VGS = 10V
8V
40
2.8
VGS = 10V
2.6
35
2.4
RDS(on) - Normalized
ID - Amperes
20
Fig. 4. RDS(on) Normalized to ID = 22A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
30
25
20
7V
15
2.2
2.0
I D = 44A
1.8
1.6
I D = 22A
1.4
1.2
1.0
10
0.8
5
6V
0.6
0
0.4
0
2
4
6
8
10
12
14
16
18
20
22
24
-50
-25
0
VDS - Volts
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 22A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
50
2.6
VGS = 10V
2.4
TJ = 125ºC
45
40
2.2
35
2.0
ID - Amperes
RDS(on) - Normalized
15
VDS - Volts
VDS - Volts
1.8
1.6
TJ = 25ºC
1.4
30
25
20
15
1.2
10
1.0
5
0
0.8
0
10
20
30
40
50
ID - Amperes
© 2008 IXYS CORPORATION, All rights reserved
60
70
80
90
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
125
150
IXFB44N100P
Fig. 7. Input Admittance
Fig. 8. Transconductance
50
60
45
55
TJ = - 40ºC
50
40
45
TJ = 125ºC
25ºC
- 40ºC
30
g f s - Siemens
ID - Amperes
35
25
20
25ºC
40
125ºC
35
30
25
20
15
15
10
10
5
5
0
0
5
5.5
6
6.5
7
7.5
8
8.5
0
9
5
10
15
VGS - Volts
20
25
30
35
40
45
50
350
400
450
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
16
130
120
VDS = 500V
14
I D = 22A
110
100
I G = 10mA
12
VGS - Volts
IS - Amperes
90
80
70
60
50
TJ = 125ºC
10
8
6
40
30
4
TJ = 25ºC
20
2
10
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
0
50
100
VSD - Volts
150
200
250
300
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
100,000
1.000
10,000
Ciss
0.100
Z(th)JC - ºC / W
Capacitance - PicoFarads
f = 1 MHz
1,000
Coss
0.010
100
Crss
10
0
5
10
15
20
25
30
35
40
VDS - Volts
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_44N100P(97)4-01-08-D
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.