* Only Chapter 1, 2 and 14 has been given for free. This book is a demo/sample of our book Publisher : Libgen Books www.cuet.pw www.cbse.page Click the website link to open the webpage Publisher : Libgen Books For CUET UG Question Bank www.cuet.pw For CBSE Question Bank www.cbse.page For Online Reading via Laptops www.libgen.co.in We have recently build our own app where all the question bank books will be available for purchasing and reading. Click here to install the app ▶ App Link Click the photo to install the app Å Click to YouTube icon to see the full question bank video § Features This book is strictly according to CBSE 2024 board exam syllabus. Due to new syllabus, only those previous year questions has been included in this Question Bank that are according to 2024 board exam syllabus so that students don’t get confused by old question papers. Your board exam will be in March 2024 and our book will be available from October 1st week or 2nd week within the price range of Rs. 58 to 61. Till then if you can wait then wait else you can buy other publishers book but other publishers question bank will not contain CBSE 2023 questions [This is challenge]. Why 2023 questions is important for you CBSE has reduced the syllabus in comparison to previous years and increased their level of questions so that you also score well in CUET UG which is the new entrance exam that has been started in 2022 for admission in any top colleges or top universities. After syllabus reduction and change in question pattern, 2023 previous years questions is the only source that represents the new question pattern. As 2022 board examination was conducted in two phases: Term I (Half Syllabus) (MCQ based) Term II (Half Syllabus) (Subjective) So 2022 had different question pattern. That’s the reason why you need to practice CBSE 2023 questions. Keep in mind that from 2023 CBSE is preparing the question paper in such pattern so that students can also score good in CUET UG Entrance exams. We have included all the previous year’s questions from all the question papers till 2023 to 2019 including compartment and 2024 official sample question paper that are strictly according to CBSE 2024 syllabus in one book so that students don’t get exhausted and confused with so many question papers. In 2021 main board examination was not conducted due to covid and students were passed on the basis of their academic scores. But 2021 compart examination was conducted for those students who failed or were absent due to COVID cases. We have even included those questions too in our book. * Unit I Electrostatics Published by : www.cbse.page www.cuet.pw Chapter 1 Electric Charges and Fields Weightage for CBSE Board 2024 Unit I and II Combined Weightage is 16 Marks À Chapter 1 À Chapter 2 À Chapter 3 It’s not fixed which chapters will have more weightage, but overall weightage will be 16 Marks. It may vary too in your question paper. ` Syllabus Electric charges, Conservation of charge, Coulomb’s law-force between two- point charges, forces between multiple charges; superposition principle and continuous charge distribution. Electric field, electric field due to a point charge, electric field lines, electric dipole, electric field due to a dipole, torque on a dipole in uniform electric field. Electric flux, statement of Gauss’s theorem and its applications to find field due to infinitely long straight wire, uniformly charged infinite plane sheet and uniformly charged thin spherical shell (field inside and outside). § 2024 SQP Question 1 An electric dipole placed in an electric field of 5 intensity 2 × 10 N/C at an angle of 30° experiences a torque equal to 4Nm. The charge on the dipole of dipole length 2 cm is (a) 7 𝜇 C (b) 8 mC (c) 2 mC (d) 5 mC A Solution 𝜏 𝑞= 2𝑎 𝐸 sin 𝜃 4 = 2 × 10−2 × 2 × 105 sin 30◦ −3 = 2 × 10 C = 2 mC ¥ 1 Marks [𝜏 = 𝑞𝐸 × 2𝑎 sin 𝜃] This type of same question was asked in 2023 question paper 55/5/1 § 2023 55(B) Compart Question 2 The electric flux through a Gaussian spherical surface enclosing a point charge 𝑞 is 𝜙. If the charge is replaced by an electric dipole, magnitude of its dipole moment being 2𝑞𝑎, the flux through the surface will be : (a) 2𝜙 (b) 𝜙 (c) A Answer 𝜙 2 (d) Zero ¥ Set 1, 1 Marks Zero Question 3 9 10 electrons are transferred to a pith ball with charge 0 · 16nC. Its charge now is : −10 (a) Zero (b) −3 · 2 × 10 C −9 −10 (c) −1.6 × 10 C (d) 3 · 2 × 10 C A Answer Zero ¥ Set 1, 1 Marks Question 4 Assertion (A) : The electrostatic field E is a conservative field. Reason (R) : Line integral of electric field E around a closed path is non zero. (a) Both Assertion (A) and Reason (R) are true and Reason (R) is the correct explanation of the Assertion (A). (b) Both Assertion (A) and Reason (R) are true, but Reason (R) is not the correct explanation of the Assertion (A). (c) Assertion (A) is true, but Reason (R) is false. (d) Assertion (A) is false and Reason (R) is also false. A Answer ¥ Set 1, 1 Marks Assertion (A) is true, but Reason (R) is false. Question 5 [OR Section] (i) Why do we use a small test charge to measure an electric field ? (ii) A small stationary positively charged particle is free to move in an electric field. In which direction will it begin to move ? (iii) Two point charges 𝑄1 ( 40 𝜇𝐶) and 𝑄2 (−16 𝜇𝐶) are placed along 𝑥−axis at 0 cm and 24 cm from the origin respectively. Calculate the net force on a third charge 𝑄3 (−2.5 𝜇𝐶) placed at 𝑥 = 36cm from the origin. A Answer ¥ 5 Marks (i) So that it does not disturb the distribution of charges whose electric field is to be measured. Otherwise field will be different from the actual field. (ii) It will move in the direction of electric field. 𝑘𝑄2𝑄3 𝑘𝑄1𝑄3 (iii) F = F2 − F1 = − 2 2 𝑟23 𝑟13 9 𝐹= 9 × 10 × 16 × 2.5 × 10 2 − 2 10 ) −12 − ( 12 × 9 −12 9 × 10 × 40 × 2.5 × 10 ( 36 × 9 2 − 2 10 ) −12 𝐹 = ( 9 × 10 × 10 𝐹 = 25 − 6.94 𝐹 = 18.06 N ) 16 × 2.5 ( 12 × − 2 10 ) − 2 40 × 2.5 ( 36 × 2 − 2 10 ) § 2023 55/C Compart Question 6 When a negative charge (−𝑄) is brought near one face of a metal cube, the (a) cube becomes positively charged (b) cube becomes negatively charged (c) face near the charge becomes positively charged and the opposite face becomes negatively charged (d) face near the charge becomes negatively charged and the opposite face becomes positively charged A Answer ¥ Set 2, 1 Marks Face near the charge becomes positively charged and the opposite face becomes negatively charged Question 7 An electric dipole with dipole moment 𝑃® = 𝑃0𝑖ˆ − 𝑃0 𝑗ˆ is placed in an electric field 𝐸® = 𝐸1𝑖ˆ + 𝐸2 𝑗ˆ, where 𝑃0, 𝐸1 and 𝐸2 are constants. The torque 𝜏® acting on the dipole is : (a) 𝑃0 (𝐸2 − 𝐸1) 𝑘ˆ (b) 𝑃0 (𝐸2 + 𝐸1) 𝑘ˆ (c) −𝑃0 (𝐸2 + 𝐸1) 𝑘ˆ (d) 𝑃0 (𝐸1 − 𝐸2) 𝑘ˆ A Answer ¥ Set 3, 1 Marks 𝑃0 (𝐸2 + 𝐸1) 𝑘ˆ is the torque acting on the dipole Question 8 The inward and the outward electric flux through a Gaussian surface are 2𝜙 and 𝜙 respectively. (a) What is the net charge enclosed by the surface ? (b) If the net outward flux through the surface were zero, can it be concluded that there were no charges inside the surface ? Justify your answer. A Answer ¥ 2 Marks (a) We know that, electric flux or electric field lines entering in a closed surface ( 2𝜙) is −ve and electric flux or electric field lines leaving a closed surface (𝜙) is +ve. Hence, net electric flux enclosed by the surface, Φ = −2𝜙 + 𝜙 Now, according to Gauss theorem, 𝑞 Φ= Therefore, 𝑞 = Φ𝜀0 𝜀0 𝑞 = (−2𝜙 + 𝜙) 𝜀0 = −𝜙 𝜀0 (b) No. Net flux piercing out through a body depends on the net charge contained in the body. If net flux is zero, then it can be said that net charge inside the body is zero. The body may have equal amount of positive and negative charges. Question 9 A sphere 𝑆1 of radius 𝑟1 enclosing a charge 𝑄1 is surrounded by another concentric sphere 𝑆2 of radius 𝑟2 (𝑟2 > 𝑟1) . If there is a charge −𝑄2 in the space between 𝑆1 and 𝑆2, find the ratio of electric flux through 𝑆1 and 𝑆2. A Answer ¥ Set 2, 2 Marks 𝑄 𝑄1 − 𝑄2 Φ1 = Φ2 = 𝜀𝑜 𝜀𝑜 Φ1 𝑄1 = Φ 2 𝑄1 − 𝑄2 Question 10 A uniform electric field is represented as 𝑁 3 ® 𝐸 = 3 × 10 𝑖ˆ. Find the electric flux of this 𝐶 field through a square of side 10 cm when the : (a) plane of the square is parallel to 𝑦 − 𝑧 plane, and (b) the normal to plane of the square makes an ◦ angle of 60 with the 𝑥−axis. A Answer ¥ Set 3, 2 Marks (a) Φ = 𝐸® · 𝐴𝑖ˆ = 𝐸𝐴 −4 −1 2 3 = 3 × 10 × 100 × 10 = 30 NC m (b) Φ = 𝐸𝐴 cos 60 −1 2 = 15NC m ◦ § 2023 55/1/1 All Sets Question 11 A point charge situated at a distance 𝑟 from a short electric dipole on its axis, experiences a force 𝐹®. If the distance of the charge is 2𝑟 , the force on the charge will be (a) ® F 16 A Answer (b) ® F 8 (c) ® F (d) 4 ® F 2 ¥ Set 1, 1 Marks Let charge q is placed at the distance r from the dipole. Electric field due to the dipole at an axial point is 1 2p E= 3 4𝜋𝜀0 r Force on a charge q placed at distance 𝑟 is 1 2pq F = qE = 3 4𝜋𝜀0 r If we doubled the distance 1 2pq ′ F = 3 4𝜋𝜀0 ( 2r) ′ F = 1 2pq 1 4𝜋𝜀0 r3 8 ∴ " # ® F 8 Question 12 (i) State Coulomb’s law in electrostatics and write it in vector form, for two charges. (ii) Gauss’s law is based on the inverse-square dependence on distance contained in the Coulomb’s law. Explain. (iii) Two charges 𝐴 (charge 𝑞) and 𝐵 (charge 2𝑞) are located at points ( 0, 0) and (a, a) respectively. Let 𝑖ˆ and 𝑗ˆ be the unit vectors along 𝑥−axis and 𝑦−axis respectively. Find the force exerted by 𝐴 on 𝐵, in terms of 𝑖ˆ and 𝑗ˆ. A Answer ¥ 5 Marks (i) Force between two point charges varies inversely with the square of distance between the charges and is directly proportional to the product of magnitude of the two charges and acts along the line joining the two charges. −→ 𝐹12 = 1 𝑞1𝑞2 − → 𝑟 12 3 4𝜋 ∈𝑜 𝑟12 − → Where 𝑟12 is a vector from charge 𝑞2 to charge 𝑞1 . (ii) In derivation of Gauss’s law, flux is calculated using Coulomb’s law and surface area. Here 1 coulomb’s law involves 2 factor and surface 2 𝑟 area involves 𝑟 factor. When product is taken, the two factors cancel out and flux becomes independent of 𝑟 . −−→ (iii) 𝑟® = 𝐴𝐵 = 𝑎b 𝑖 + 𝑎b 𝑗 √ −−→ √ 2 2 r = | 𝐴𝐵| = 𝑎 + 𝑎 = 2𝑎 1 𝑞1𝑞2 ˆ 𝐹® = 𝑟 2 4𝜋 ∈ 𝑜 𝑟 1 b 𝑞 × 2𝑞 (𝑎b 𝑖 + 𝑎 𝑗) 𝐹® = × √ × √ 4𝜋𝜀𝑜 ( 2𝑎) 2 2𝑎 2 b b 1 2𝑞 ( 𝑖 + 𝑗) 𝐹® = × 2× √ 4𝜋𝜀𝑜 2𝑎 2 𝐹® = 2 1 4𝜋𝜀𝑜 𝐹® = √ 𝑞 𝑞 ×√ 2𝑎 2 4 2𝜋𝜀𝑜 𝑎2 1 2 × (b 𝑖+b 𝑗) (b 𝑖+b 𝑗) 2 𝑞 ® = | 𝐹| 2 4𝜋 ∈ 𝑜 𝑎 OR (i) Derive an expression for the electric field at a point on the equatorial plane of an electric dipole consisting of charges 𝑞 and −𝑞 separated by a distance 2a. (ii) The distance of a far off point on the equatorial plane of an electric dipole is halved. How will the electric field be affected for the dipole? (iii) Two identical electric dipoles are placed along the diagonals of a square ABCD of side √ 2 m as shown in the figure. Obtain the magnitude and direction of the net electric field at the centre ( O) of the square. A Answer ¥ 5 Marks (i) The magnitudes of the electric fields due to the two charges +𝑞 and −𝑞 are given by 𝑞 1 E+𝑞 = × 2 4𝜋𝜀𝑜 𝑟 + 𝑎2 1 𝑞 × 2 E−𝑞 = 2 4𝜋𝜀𝑜 𝑟 + 𝑎 The components normal to dipole axis cancel away. The components along the dipole axis add up. Total electric field is opposite to dipole moment. 𝐸® = − 𝐸+𝑞 + 𝐸−𝑞 cos 𝜃 b 𝑝 = = −2𝑞𝑎 2 2 4𝜋 ∈0 (𝑟 + 𝑎 ) b 𝑝 3/2 − 𝑝® 2 3/2 2 4𝜋 ∈0 (𝑟 + 𝑎 ) (ii) At far off point 𝑟 ≫ 𝑎 ® − 𝑝 𝐸® = 3 4𝜋 ∈𝑜 𝑟 When distance is halved. ® − 𝑝 − 8 𝑝® 𝐸® = 𝑟 3 = 3 4𝜋 ∈ 𝑜 𝑟 4𝜋 ∈𝑜 2 𝐸® becomes 8 times (iii) 𝑝1 = 𝑞 × 2𝐶𝑚 (along OA) 𝑝2 = 𝑞 × 2𝐶𝑚 (along OD) √︃ √ 2 𝑝net = 𝑝1 + 𝑝22 = 2 2𝑞𝐶𝑚 Electric field at centre O 𝐸= 𝑘𝑝𝑛𝑒𝑡 2 2 3/2 (𝑟 + 𝑎 ) at point O, r = 0, a = 1 m √ √ 𝑘 × 2 2𝑞 𝐸= = 2 2 𝑘𝑞 3 1 √ 2 2𝑞 = Along DC 4𝜋𝜀𝑜 Alternatively 𝑘𝑞 𝐸= 2 𝑟 AC = BD = 2 m r = OA = OB = OC = OD = 1 m Electric field at O due to charges at B and D E1 = EB + ED = 𝑘𝑞 2 1 + = 2𝑘𝑞 along OB 𝑘𝑞 2 1 Electric field at O due to charges at A and C E2 = EA + EC 𝑘𝑞 𝑘𝑞 + = 2 𝑘𝑞 along OC 12 12 √︃ 2 2 Enet = 𝐸1 + 𝐸2 √ √ 2 2𝑞 = 2 2kq = Along DC 4𝜋𝜀𝑜 E2 = Alternatively Considering AB as dipole, electric field at O E1 = 2𝑘𝑞 × 𝑎 2𝑘𝑞𝑎 = ! 3 / 2 3/2 2 2 1 1 1 1 + + √ √ 2 2 2 2 = 2𝑘𝑞𝑎 Similarly considering DC as another dipole, electric field at O 2𝑘𝑞𝑎 2𝑘𝑞 × 𝑎 E2 = = ! 3 / 2 3/2 2 2 1 1 1 1 + + √ √ 2 2 2 2 = 2𝑘𝑞𝑎 Enet = E1 + E2 = 4kqa = 1 4𝜋𝜀𝑜 √ 1 ×4×√ ×𝑞 = 2 2kq = √ 2 2 2𝑞 4𝜋𝜀𝑜 Along DC § 2023 55/2/1 All Sets Question 13 The magnitude of the electric field due to a point charge object at a distance of 4.0 m is 9 N/C. From the same charged object the electric field of magnitude, 16 N/C will be at a distance of (a) 1 m (b) 2 m (c) 3 m (d) 6 m A Answer ¥ Set 1, 1 Marks As per given in your NCERT Book, (Topic: Coulomb’s Law) 1 9 𝑘= = 9 × 10 4𝜋𝜀𝑜 9 9 × 10 × 𝑞 𝑘𝑞 𝐸1 = 2 ∴ ⇒9= 2 4 𝑟1 ( 9 × 16) −9 𝑞= = 16 × 10 ( 9 × 109) For electric field 16 N/C 𝑘𝑞 𝐸2 = 2 𝑟2 9 16 = −9 9 × 10 × 16 × 10 2 2 𝑟 2 2 𝑟 =9 ⇒ 𝑟2 = 3 m Question 14 An isolated point charge particle produces an ® at a point 3 m away from it. The electric field E ® /4) distance of the point at which the field is ( E will be (a) 2 m (b) 3 m (c) 4 m A Answer (d) 6 m ¥ Set 2, 1 Mark The electric field E produced by a point charge at a distance 𝑟 from it is given by the equation: 𝑘𝑄 𝐸= 2 𝑟 Where 𝑘 is Coulomb’s constant and 𝑄 is the charge on the particle. Let the distance of the point where the electric field is 𝐸 be 𝑥 metres away from the particle. 4 So, the electric field at this point can be calculated as: 𝐸 𝑘𝑄 = 2 4 𝑥 Also, we know that the electric field at a point 3 metres away from the particle is E. So we can write: 𝐸= 𝑘𝑄 2 3 Equating these two equations, we get: 𝑘𝑄 𝑘𝑄 = 2 2 𝑥 3 ×4 By solving, we get: 2 2 ⇒ 𝑥 = 3 × 4 = 36 ⇒ 𝑥 = 6m Question 15 Assertion (A) : Work done in moving a charge around a closed path, in an electric field is always zero. Reason (R) : Electrostatic force is a conservative force. (a) Both Assertion (A) and Reason (R) are true and Reason (R) is the correct explanation of the Assertion (A). (b) Both Assertion (A) and Reason (R) are true, but Reason (R) is not the correct explanation of the Assertion (A). (c) Assertion (A) is true, but Reason (R) is false. (d) Assertion (A) is false and Reason (R) is also false. A Answer ¥ Set 1, 1 Marks Both Assertion (A) and Reason (R) are true and Reason (R) is the correct explanation of Assertion(A). Question 16 (i) Use Gauss’ law to obtain an expression for the electric field due to an infinitely long thin straight wire with uniform linear charge density 𝜆 . (ii) An infinitely long positively charged straight wire has a linear charge density 𝜆 . An electron is revolving in a circle with a constant speed 𝑣 such that the wire passes through the centre, and is perpendicular to the plane, of the circle. Find the kinetic energy of the electron in terms of magnitudes of its charge and linear charge density 𝜆 on the wire. (iii) Draw a graph of kinetic energy as a function of linear charge density 𝜆 . A Answer ¥ 5 Marks (i) Flux through the Gaussian Surface is equal to flux through the curved cylindrical part = E × 2𝜋𝑟𝑙 The surface charge equal to 𝜆𝑙 Δ𝑄 where, 𝜆 = = linear charge density Δ𝑙 According to Gauss’s law 𝑞 𝜆𝑙 𝐸 × 2𝜋𝑟𝑙 = = 𝜀0 𝜀0 𝜆 𝐸= 2𝜋𝜀0𝑟 𝜆 (ii) As 𝐸 = 2𝜋𝜀0𝑟 The revolving electron experiences an electrostatic force and provides necessarily centripetal force. 2 𝑚𝑣 ⇒ = 𝑒𝐸 𝑟 1 2 ∴ Kinetic energy 𝐾 = 𝑚𝑣 2 By Substituting: 1 1 1 𝜆𝑟 𝑒𝜆 2 = 𝑚𝑣 = 𝑒𝐸𝑟 = 𝑒 = 2 2 2 2𝜋𝜀0𝑟 4𝜋𝜀0 This Question was repeated in 2019 (B), 2013 𝑒𝜆 (iii) Kinetic energy 𝐾 = 4𝜋𝜀0 ∴𝐾∝𝜆 This Question was repeated in 2013 § 2023 55/3/1 All Sets Question 17 −16 An electron experiences a force 1.6 × 10 → − → − N î in an electric field E . The electric field E is N N 3 3 (a) 1.0 × 10 î (b) − 1.0 × 10 î C C N −3 (c) 1 · 0 × 10 î C N −3 (d) − 1.0 × 10 î C A Answer 𝐹® = (−𝑞) 𝐸® 𝐸® = ¥ Set 1, 1 Marks −16 1.6 × 10 N î − 19 10 −1 . 6 × C N 3 = − 1.0 × 10 î C Question 18 An infinitely long uniformly charged wire −1 4 produces an electric field of 18 × 10 NC at a distance of 1.0 cm. The linear charge density on the wire is (a) 1.12 × 10 −14 −1 Cm (b) 3.08 × 10 −15 −1 Cm −1 −9 −1 −7 (c) 1.0 × 10 Cm (d) 1.0 × 10 Cm A Answer ¥ Set 1, 1 Marks 𝜆 𝐸= 2𝜋𝜀𝑜𝑟 Therefore 𝜆 = 𝐸 × 2𝜋𝜀𝑜𝑟 𝑑 = 1cm = 0.1m −12 𝜀0 = 8.854 × 10 2 −1 C N 4 −2 m 𝜆 = 18 × 10 × 2 × 3.14 × 8.854 × 10 −7 −12 × 0.1 −1 = 1.0 × 10 Cm Question 19 (i) Define electric flux and write its SI unit. (ii) Use Gauss’ law to obtain the expression for the electric field due to a uniformly charged infinite plane sheet. (iii) A cube of side L is kept in space, as shown in N → − the figure. An electric field E = ( A𝑥 + B) î C exists in the region. Find the net charge enclosed by the cube. A Answer ¥ 5 Marks (i) Electric flux is the number of electric field lines passing through an area normally. 𝜙 = 𝐸® · 𝐴® 2 S.I. unit of electric flux Nm /C or V-m. (ii) From ∫ Gauss’s law: − → 𝑞 𝜙= 𝐸® · 𝑑 𝐴 = 𝜀𝑜 𝜎𝐴 𝜎 2𝐸𝐴 = 𝐸= 𝜀𝑜 2𝜀 𝑜 (iii) 𝜙𝐿 = 𝐸 Δ𝑆 cos 180 = −𝐸 Δ𝑆 = −𝐵𝐿 ◦ 2 𝜙𝑅 = 𝐸 Δ𝑆 cos 0 = 𝐸 Δ𝑆 2 3 2 = (𝐴𝐿 + 𝐵)𝐿 = 𝐴𝐿 + 𝐵𝐿 ◦ 3 Net flux = 𝜙𝐿 + 𝜙𝑅 = 𝐴𝐿 + 𝐵𝐿 𝑞 3 Net flux = 𝐴𝐿 = 𝜀𝑜 2 − 𝐵𝐿 2 3 Net charge enclosed by the cube is 𝑞 = 𝐴𝐿 𝜀0 § 2023 55/4/1 All Sets Question 20 Two charges 𝑞1 and 𝑞2 are placed at the centres of two spherical conducting shells of radius 𝑟1 and 𝑟2 respectively. The shells are arranged such that their centres are 𝑑 [> (𝑟1 + 𝑟2)] distance apart. The force on 𝑞2 due to 𝑞1 is : 1 q1q2 1 q1q2 (a) (b) 2 2 4𝜋𝜀0 d 4𝜋𝜀0 ( d − r1) 𝑞1 𝑞2 1 (c) Zero (d) 2 4𝜋𝜀0 [𝑑 − (𝑟1 + 𝑟2)] A Answer ¥ Set 1, 1 Marks (c) Zero is the correct option Question 21 A point charge 𝑞 is kept at a distance 𝑟 from an infinitely long straight wire with charge density 𝜆 . The magnitude of the electrostatic force experienced by charge 𝑞 is : (a) Zero 𝑞𝜆 (b) 2𝜋𝜀0𝑟 𝑞𝜆 (c) 4𝜋𝜀0𝑟 𝑞𝜆 (d) 𝜀0𝑟 A Answer ¥ Set 2, 1 Marks 𝑞𝜆 (b) is the correct option. 2𝜋𝜀0𝑟 Question 22 A particle of mass 𝑚 and charge −𝑞 is moving with a uniform speed 𝑣 in a circle of radius 𝑟 , with another charge 𝑞 at the centre of the circle. The value of r is 1 q 1 q 2 (a) (b) 4𝜋𝜀0 m v 4𝜋𝜀0 m v m q 2 m q (d) (c) 4𝜋𝜀0 v 4𝜋𝜀0 v A Answer (b) 1 ¥ Set 3, 1 Marks q 2 4𝜋𝜀0 m v is the correct option Question 23 Two identical dipoles are arranged in x-y plane as shown in the figure. Find the magnitude and the direction of net electric field at the origin O. A Answer ¥ 2 Marks → − Dipole moment due to dipole BA is 𝑝1 and dipole → − moment due to dipole DC is 𝑝2. → − Electric field 𝐸®1 due to 𝑝1 is along OB. → − → − Electric field 𝐸2 due to 𝑝2 is along OD. Magnitude of resultant Electric field √ −−→ 𝐸𝑛𝑒𝑡 = 2 2𝐸 𝑞 1 → − → − Since 𝐸1 = 𝐸2 = 𝐸 = · 2 4𝜋𝜀0 𝑎 √ 1 2 2𝑞 𝐸®𝑛𝑒𝑡 = · 2 4𝜋𝜀0 𝑎 Direction of 𝐸®𝑛𝑒𝑡 is 225° to 𝑥− axis. Alternatively: Considering CB as dipole, electric field at O √ 𝐸1 = " 2𝑘𝑞 × (𝑎/ 2) 2 𝑎 𝑎 + √ √ 2 2 √ 2𝑘𝑞 × 𝑎 𝐸1 = 3/2 1 1 3 + 𝑎 2 2 √ 2𝑘𝑞 𝐸1 = 2 𝑎 # 2 3/2 Similarly considering AD as another dipole, electric field at O √ 𝐸2 = " 2𝑘𝑞 × (𝑎/ 2) 2 𝑎 𝑎 + √ √ 2 2 √ 2𝑘𝑞 × 𝑎 𝐸2 = 3/2 1 1 3 𝑎 + 2 2 √ 2𝑘𝑞 𝐸2 = 2 𝑎 √ 𝐸net = 𝐸1 + 𝐸2 = # 2 3/2 2𝑘𝑞 2 𝑎 √ + 2𝑘𝑞 2 √ = 2 2𝑘𝑞 2 𝑎 𝑎 Direction of 𝐸®𝑛𝑒𝑡 is 225° to 𝑥− axis. Question 24 Use Gauss’s law to obtain the expression for electric field due to uniformly charged infinite plane thin sheet. A Answer ¥ Set 2, 2 Marks Net flux through the Gaussian surface𝜙 = 2𝐸𝐴 𝑞 By Gauss Law 𝜙 = 𝜀0 𝑞 = 2𝐸𝐴 where, 𝑞 = 𝜎𝐴 𝜀0 𝜎𝐴 = 2𝐸𝐴 𝜀0 𝜎 𝜎 = 2𝐸 ⇒ 𝐸 = 𝜀0 2𝜀0 Question 25 Use Gauss’s law to obtain the expression for electric field due to a thin infinitely long straight uniformly charged wire. A Answer ¥ Set 3, 2 Marks Flux through the Gaussian surface = flux through the curved cylindrical part of the surface = 𝐸 × 2𝜋𝑟𝑙 The surface includes charges equal to 𝜆𝑙 , 𝜆𝑙 Gauss law then gives 𝐸 × 2𝜋𝑟𝑙 = 𝜀0 𝜆 𝐸= 2𝜋𝜀0𝑟 § 2023 55/5/1 All Sets Question 26 An electric dipole of length 2 cm is placed at an ◦ 5 angle of 30 with an electric field 2 × 10 N/C. If −3 the dipole experiences a torque of 8 × 10 Nm, the magnitude of either charge of the dipole, is (a) 4 𝜇 C (b) 7 𝜇 C (c) 8mC A Answer ¥ Set 1, 1 Marks 𝜏 = 𝑝𝐸 sin 𝜃 𝑝= 8 × 10 (d) 2mC 𝑝= −3 2 × 105 × 1 𝜏 𝐸 sin 𝜃 = 8 × 10 2 −2 𝑑 = 2 cm = 2 × 10 m Therefore, −8 𝑝 8 × 10 𝑞= = = 4 𝜇 C − 2 𝑑 2 × 10 −8 𝑝=𝑞×𝑑 Question 27 A charge 𝑄 is placed at the centre of a cube. The electric flux through one of its face is 𝑄 𝑄 (a) (b) 𝜀0 6𝜀0 A Answer 𝑄 (c) 8𝜀0 𝑄 (d) 3𝜀0 ¥ Set 2, 1 Marks As the charge at the center of the cube, the flux through each surface is same. 𝑄 Using Gauss’s law, 6𝜙 = 𝜀0 𝑄 ⇒𝜙= 6𝜀 0 Question 28 → − An electric dipole of dipole moment ( p ) is kept → − in a uniform electric field E Show graphically the variation of torque acting on the dipole (𝜏) with its orientation (𝜃) in the field. Find the orientation in which torque is (i) zero (ii) maximum. A Answer ¥ Set 2, 2 Marks (i) Torque is zero for orientation corresponding ◦ ◦ to 𝜃 = 0 and 𝜃 = 180 (ii) Torque is maximum for orientation 𝜋 3𝜋 corresponding to 𝜃 = and 𝜃 = 2 2 § 2023 55(B) Question 29 The charge on a body is 8 × 10 the body has : −12 (a) lost 8 × 10 electrons 10 (b) gained 4 × 10 electrons 8 (c) gained 2 × 10 electrons 7 (d) lost 5 × 10 electrons A Answer −12 C. It means that ¥ Set 1, 1 Marks 7 (d) lost 5 × 10 electrons is the correct option. Question 30 (i) What is an electric dipole ? Derive an expression for the torque acting on an electric dipole in a uniform electric field. (ii) An electric dipole with dipole moment −9 6 × 10 C−m is aligned at an angle of 30° with the direction of a uniform electric field of 4 −1 magnitude 4 × 10 NC . Calculate magnitude of the torque acting on the electric dipole. A Answer ¥ 5 Marks (i) Electric Dipole:An arrangement of two equal and opposite charges separated by a small distance. Consider an electric dipole of charges ±𝑞 and length 2𝑙 kept in a uniform electric field E. The dipole makes an angle 𝜃 with the uniform electric field. Forces on two charges due to uniform electric field, 𝑞𝐸 and −𝑞𝐸 are in opposite directions. The distance between the line of action of two force is 2𝑙 sin 𝜃. Torque due to the couple 𝜏 = force × perpendicular distance between the two force 𝜏 = 𝑞𝐸( 2𝑙 sin 𝜃) 𝜏 = = 𝑞( 2𝑙) · 𝐸 sin 𝜃 = 𝑝𝐸 sin 𝜃 (ii) Magnitude of the torque on the electric dipole 𝜏 = 𝑝𝐸 sin 𝜃 −9 4 ◦ 𝜏 = 6 × 10 × 4 × 10 × sin 30 −4 𝜏 = 1.2 × 10 Nm OR (a) State Gauss’s Law in electrostatics. Using it, derive an expression for the electric field due to a uniformly charged thin spherical shell of radius R at a point (i) outside, and (ii) inside the shell. (b) A point charge of 4 𝜇 C is at the centre of a cubic Gaussian surface, 1 m on edge. Find the electric flux through one of the faces of the Gaussian surface. A Answer ¥ 5 Marks (a) Gauss’s law in electrostatics states that net electric flux linked with a closed surface equals 1/𝜀𝑜 times the charge enclosed by the surface. Consider a conducting spherical shell of radius 𝑅, charge given to it is 𝑞. (i) For point P outside the shell construct a concentric sphere(Gaussian surface) of radius𝑟(𝑟 > 𝑅) Electric flux linked with the Gaussian sphere 2 𝜙𝐸 = 𝐸 · 4𝜋𝑟 Charge enclosed by the Gaussian spherical surface = 𝑞 According to Gauss’s Law 𝑞 𝜙𝐸 = 𝜀𝑜 𝑞 2 𝐸 · 4𝜋𝑟 = 𝜀𝑜 𝑞 𝐸= 2 4𝜋𝜀𝑜𝑟 (ii) For a point inside the shell Charge enclosed by the Gaussian spherical surface of radius ′ ′ 𝑟 (𝑟 < 𝑅) = 0 𝑞 𝑖𝑛 ′2 =0 ∴ 𝐸 · 4𝜋𝑟 = 𝜀𝑜 𝐸=0 (b) Net electric flux linked with the cube ′ 𝜙E(net) 𝑞 = 𝜀𝑜 Electric flux linked with one face 𝜙 𝑞 E(net) ′ 𝜙𝐸 = = 𝜀𝑜 6𝜀 𝑜 ′ 𝜙𝐸 = 4 × 10 −6 6 × 8.854 × 10−12 4 2 −1 = 7.5 × 10 Nm C Question is asked to find the electric flux through one of the faces of the Gaussian surface not the net electric flux through the surface. That’s why flux has been divided by 6 Question 31 After centuries of efforts, careful studies, experiments and analysis by different scientists, it was concluded that there are two kinds of entities called the electric charge. The property which differentiates the two kinds is called the polarity of charge. The two kinds of charges were named as positive (+) and negative (−) by American scientist Benjamin Franklin. A small sphere S1 with charge 8𝑞 is 1.6 m away from another identical sphere S2 with charge +2𝑞. The two spheres are brought in contact with each other and then separated by a distance 1.6 m. Initially the force between the −4 two spheres was 8.1 × 10 N. Based on the above facts, answer the following questions : (i) Which sphere will transfer the electrons to the other sphere after they were brought in contact ? A Answer ¥ Set 1, 1 Marks Electrons will be transferred from sphere S1 to sphere S2 when brought in contact. (ii) How does the net electric field at the midpoint on the line joining the two spheres change after contact ? A Answer ¥ Set 1, 1 Marks Net electric field changes from non zero to zero at the midpoint of line joining the centres of the two spheres. (iii) What was initial charge on spheres S1 and S2 ? A Answer ¥ 2 Marks 1 𝑞1 𝑞2 = 𝐹 4𝜋𝜀0 𝑟 2 ( 8𝑞)( 2𝑞) −4 9 = 8.1 × 10 N 9 × 10 × 1.6 × 1.6 −4 8.1 × 1.6 × 1.6 × 10 2 16𝑞 = 9 9 × 10 −4 8 . 1 × 1 . 6 × 1 . 6 × 10 2 𝑞 = 9 9 × 10 × 16 2 −16 −8 𝑞 = 9 × 16 × 10 ∴ 𝑞 = 12 × 10 C −8 Charge on S1 = −8𝑞 = −96 × 10 C −8 Charge on S2 = 2𝑞 = 24 × 10 C OR (iii) What is the charge on spheres S1 and S2 after contact ? A Answer ¥ 2 Marks Charges on S1 and S2 after were brought in contact −3𝑞 and −3𝑞 § 2022 Term I 55/2 Question 32 A negatively charged object X is repelled by another charged object Y. However an object Z is attracted to object Y. Which of the following is the most possibility for the object Z? (a) positively charged only (b) negatively charged only (c) neutral or positively charged (d) neutral or negatively charged A Answer ¥ Set 1, 1 Marks (c) neutral or positively charged Explanation ▲ X is negatively charged. Since it is repelled by Y, Y is also negatively charged. ▲ Now, if Z is neutral or positively charged then it will be attracted by Y. Question 33 In an experiment three microscopic latex spheres are spread into a chamber and became charged with charges +3e,+5e and –3e respectively. All the three spheres came in contact simultaneously for a moment and got separated. Which one of the following are possible values for the final charge on the spheres? (a) +5e, –4e, +5e (b) +6e, +6e, –7e (c) –4e, +3.5e, +5.5e (d) +5e, –8e, +7e A Answer ¥ Set 1, 1 Marks (b) +6e, +6e, –7e Explanation ▲ When three spheres are brought in contact the net charge will be –3e + 3e + 5e = 5e ▲ When separated this 5e charge will be distributed. ▲ In option (A), Total charge is 6e. So, this option is not correct. ▲ In option (B), total charge is 5e. So, this option is correct. ▲ In option (C), Total charge is 5e. But this violates quantization of charge principle. Hence this option is not correct. ▲ In option (D), total charge is -10e, Hence this option is not correct. Question 34 18 An object has charge of 1 C and gains 5.0 × 10 electrons. The net charge on the object becomes: (a) −0.80 C (b) +0.80 C (c) +1.80 C A Answer (d) +0.20 C ¥ Set 1, 1 Marks d) +0.20 C Explanation Charge of 1 electron =−1.6 × 10 −19 𝐶 18 So, Charge of 5.0 × 10 electrons 18 −19 = −5.0 × 10 × 1.6 × 10 𝐶 = −0.8𝐶 Already existing charge = 1C So, net charge at present = 1 − 0.8 = 0.2𝐶 Question 35 The magnitude of electric field due to a point charge 2𝑞, at distance 𝑟 is E. Then the magnitude of electric field due to a uniformly charged thin spherical shell of radius R with total charge 𝑞 at a distance (a) 𝐸 𝑟 2 (𝑟 >> 𝑅) will be (b) 0 4 A Answer (c) 2E (d) 4E ¥ Set 1, 1 Marks (c) 2E Explanation Electric field due to the point charge 𝐾 × 2𝑞 =𝐸= 𝑟 2 Electric field due to the spherical shell 𝐾 ×𝑞 =𝐸 = = 2 𝐸 (𝑟/2) 2 ′ Question 36 A square sheet of side 𝑎 is lying parallel to XY plane at 𝑧 = 𝑎. The electric field in the region is → − 2ˆ E = 𝑐𝑧 𝑘 . The electric flux through the sheet is 1 1 4 3 4 (a) 𝑎 𝑐 (b) 𝑎 𝑐 (c) 𝑎 𝑐 (d) 0 3 3 A Answer ¥ Set 1, 1 Marks 4 (a) 𝑎 𝑐 Explanation → − → − Flux = E · A 2ˆ 2ˆ 2 2 = 𝑐𝑧 𝑘 · 𝑎 𝑘 = 𝑐𝑧 𝑎 𝑧=𝑎 2 2 𝑧 =𝑎 Question 37 Three charges 𝑞, −𝑞 and 𝑞0 are placed as shown in figure. The magnitude of the net force on the 1 charge 𝑞0 at point 𝑂 is 𝑘 = ( 4𝜋𝜀0) (a) 0 (b) 2𝑘𝑞𝑞0 𝑎2 √ (c) 2𝑘𝑞𝑞0 𝑎2 A Answer √ 2𝑘𝑞𝑞0 (c) 2 𝑎 1 𝑘𝑞𝑞0 (d) √ 2 𝑎 2 ¥ Set 1, 1 Marks Explanation Positions of 𝑞0, −𝑞 and 𝑞 are shown. Both −𝑞 and 𝑞 charges are equidistant from 𝑞0. So, the magnitude of both the forces on 𝑞0 will be equal. ◦ The angle between the forces will be 90 as shown in the diagram. Hence the resultant force √ 2 F 2 F +2F×F× √ √ 𝑘𝑞𝑞0 √ 1 𝑞𝑞0 = 2F= 2× 2 = 2× × 2 𝑎 4𝜋𝜀0 𝑎 = + ◦ cos 90 Question 38 Four objects W, X, Y and Z, each with charge +q are held fixed at four points of a square of side d as shown in the figure. Objects X and Z are on the midpoints of the sides of the square. The electrostatic force exerted by object W on object X is F. Then the magnitude of the force exerted by object W on Z is (a) 𝐹 (b) 7 A Answer (b) 𝐹 (c) 5 𝐹 (d) 3 5 Explanation Force on X by W is 2 2 4𝑘𝑞 𝑘𝑞 = 𝐹= 2 2 (𝑑/2) 𝑑 √︂ 2 √︁ 5 𝑑 2 2 𝑊𝑍 = 𝑑 + (𝑑/2) = Force on Z by W is 2 𝑘𝑞 4 𝑘𝑞 𝐹 ′ 𝐹 = 2= = 2 5𝑑 5 5𝑑 4 2 ¥ Set 1, 1 Marks 𝐹 2 𝐹 4 Question 39 Assertion (A) : A negative charge in an electric field moves along the direction of the electric field. Reason (R) : On a negative charge a force acts in the direction of the electric field. (a) Both Assertion (A) and Reason (R) are true and Reason (R) is the correct explanation of the Assertion (A). (b) Both Assertion (A) and Reason (R) are true, but Reason (R) is not the correct explanation of the Assertion (A). (c) Assertion (A) is true, but Reason (R) is false. (d) Assertion (A) is false and Reason (R) is also false. A Answer ¥ Set 1, 1 Marks Assertion (A) is false and Reason (R) is also false. Explanation Assertion is wrong since electron moves in opposite direction of the electric field. Reason is also false since on negative charge force acts in the opposite direction of the electric field. § 2020 55/C Compart Question 40 (a) A uniformly charged large plane sheet has 1 −15 2 charge density 𝜎 = × 10 C/m . 18𝜋 Find the electric field at point A which is 50 cm from the sheet. Consider a straight line with three points P, Q and R, placed 50 cm from the charged sheet on the right side as shown in the figure. At which of these points, does the magnitude of the electric field due to the sheet remain the same as that at point 𝐴 and why? (b) Two small identical conducting spheres carrying charge 10 𝜇 C and −20 𝜇 C when separated by a distance of r, experience a force F each. If they are brought in contact 𝑟 and then separated to a distance of , what is 2 the new force between them in terms of F ? A Answer ¥ 3 Marks (a) Electric field due to a uniformly charged sheet 𝜎 −6 E= = 1 × 10 N/C outward 2𝜀 𝑜 At point Q For finite plane sheet, electric field is uniform in the middle. At the edges it will be curved. (b) q1 = q2 = ′ ′ 𝐹 = ′ 𝐹 2 10 + (−20) 2 = −5 𝜇 C § 2020 55/5/1 All Sets Question 41 The electric flux through a closed Gaussian surface depends upon (a) Net charge enclosed and permittivity of the medium (b) Net charge enclosed, permittivity of the medium and the size of the Gaussian surface (c) Net charge enclosed only (d) Permittivity of the medium only A Answer ¥ Set 1, 1 Marks Net Charge enclosed and permittivity of the medium Question 42 A point charge is placed at the centre of a hollow conducting sphere of internal radius r and outer radius 2r. The ratio of the surface charge density of the inner surface to that of the outer surface will be A Answer ¥ Set 1, 1 Marks 𝑄 Surface charge density 𝜎 = 𝐴 𝑞 Surface charge density on 𝜎1 = 4𝜋𝑟 2 𝑞 Surface charge density on 𝜎2 = 2 4𝜋( 2𝑅) 𝑞 2 𝜎1 4 4𝜋𝑟 = = 𝑞 𝜎2 1 2 4𝜋( 2𝑅) Question 43 Derive the expression for the torque acting on an electric dipole, when it is held in a uniform electric field. Identify the orientation of the dipole in the electric field, in which it attains a stable equilibrium. A Answer ¥ 2 Marks Force on 𝑞 is 𝑞E and a force on −𝑞 is −𝑞E. Hence torque 𝜏 = 𝑞𝐸 × 2𝑎 sin 𝜃 𝜏 = 𝑃𝐸 sin 𝜃 𝜏® = 𝑃® × 𝐸® For stable equilibrium 𝜃 = 0° Question 44 (a) Write two important characteristics of equipotential surfaces. (b) A thin circular ring of radius 𝑟 is charged uniformly so that its linear charge density becomes 𝜆 . Derive an expression for the electric field at a point P at a distance 𝑥 from it along the axis of the ring. Hence, prove that at large distances (𝑥 >> 𝑟) , the ring behaves as a point charge. A Answer ¥ 5 Marks (a) For equipotential surfaces ▲ Potential has the same value at all points on the surface. ▲ Electric field is normal to the equipotential surface at all points ▲ Work done in moving any charge between any two points on the equipotential surface is zero (b) Electric field due to any elemental (point) charge 𝑑𝑞, at point P. = dE = 1 dq 2 2 4𝜋𝜀0 (𝑥 + 𝑟 ) This is directed along AP Its component along the axis OP of the ring is 𝑥 = dE cos 𝜃 = dE √ 𝑥 2 + 𝑟2 The component, perpendicular to the axis gets cancelled by the elemental electric field due to another elemental charge symmetrically located on the other side of the axis. Hence total electric field∫ 𝑑 E cos 𝜃 ∫ 1 𝑑𝑞 𝑥 = √ 2 2 (𝑥 + 𝑟 ) 𝑥 2 + 𝑟 2 4𝜋𝜀0 ∫ 1 𝑥 = 𝜆 d 𝑙 4𝜋𝜀0 (𝑥 2 + 𝑟 2) 3/2 𝐸= = 1 𝑥𝜆 4𝜋𝜀0 (𝑥 2 + 𝑟 2) × 2 𝜋𝑟 3/2 𝑄 𝑥 = 4𝜋𝜀0 (𝑥 2 + 𝑟 2) 3/2 Where 𝑄 = 𝜆 × 2𝜋𝑟 = total charge on the ring This field is directed along the axis. When 𝑥 much larger than 𝑟 , we have 𝑥 𝑄 1 𝑄 𝐸= = 2 3 / 2 2 4𝜋𝜀0 (𝑥 ) 4𝜋𝜀0 𝑥 This corresponds to the expression for the electric field due to a point charge. Thus at large distances the ring behaves like a point charge. OR (a) State Gauss’s law on electrostatics and derive an expression for the electric field due to a long straight thin uniformly charged wire (linear charge density 𝜆 ) at a point lying at a distance r from the wire. −1 (b) The magnitude of electric field (in NC ) in a region varies with the distance r (in m) as E = 10 r + 5. By how much does the electric potential increase in moving from point at r = 1 m to a point at r = 10 m. A Answer ¥ 5 Marks (a) Electric flux through of a closed surface is 1/𝜀◦ times the charge enclosed by the surface. 𝑞 Therefore; 𝜙𝐸 = 𝜀◦ Let the charge be uniformly distributed on a wire ∫ ∫ ∫ ∫ 𝜙= 𝑑𝜙 = 𝐸® · 𝑑 𝑠®1 + 𝐸® · 𝑑 𝑠®2 + 𝐸® · 𝑑 𝑠®3 ∫ ∫ ∫ ◦ ◦ ◦ = 𝐸𝑑𝑠1 cos 0 + 𝐸𝑑𝑠2 cos 90 + 𝐸𝑑𝑠3 cos 90 ∫ =𝐸 𝑑𝑠1 = 𝐸 · 2𝜋𝑟𝑙 𝑞 = 𝐸 · 2𝜋𝑟𝑙 by Gauss’s law 𝜀0 𝑞 1 𝜆 = E= 2𝜋𝜀0𝑟𝑙 2𝜋𝜀0 𝑟 (b) E = 10r + 5 dV = −E · dr ∫ dV = − ∫ 1 10 ® d®r = − E ∫ 1 10 ( 10r + 5) dr V=− "∫ V = 10 10 10𝑟 dr + 1 2 10 𝑟 2 1 + 5 (𝑟) ∫ 1 # 10 5dr 10 1 V = −5 [ 100 − 1] + 5 [ 10 − 1] V = −5 × 99 + 5 × 9 = −540 V § 2019 55/5/1 All Sets Question 45 Derive an expression for the torque acting on an electric dipole of dipole moment 𝑝® placed in a uniform electric field 𝐸®. Write the direction along which the torque acts. A Answer ¥ 2 Marks Force on either charge F = qE Magnitude of torque = Either of force × ⊥ distance between them. 𝜏 = qE2a sin 𝜃 𝜏 = pE sin 𝜃 𝜏® = 𝑝® × 𝐸® Direction is normal to the paper coming out of it. OR Derive an expression for the electric field at a point on the axis of an electric dipole of dipole moment 𝑝®. Also write its expression when the distance 𝑟 >> the length 𝑎 of the dipole. A Answer 𝑞 ® 𝐸− = along (−) 𝑝 2 4𝜋𝜀0 (𝑟 + 𝑎) 𝑞 ® 𝐸+ = along (+) 𝑝 2 4𝜋𝜀0 (𝑟 + 𝑎) ∴ Total field at 𝑃, 𝐸 = 𝐸− − 𝐸+ 𝑞 1 1 = − 4𝜋𝜀0 (𝑟 − 𝑎) 2 (𝑟 + 𝑎) 2 𝑞 2 𝑝𝑟 = 2 2 2 4𝜋𝜀0 (𝑟 − 𝑎 ) For 𝑟 >> 𝑎 1 2𝑝 𝐸= 4𝜋𝜀0 𝑟 3 ¥ 2 Marks Question 46 Why is the direction of the electric field due to a charged conducting sphere at any point perpendicular to its surface ? A Answer ¥ Set 2, 1 Marks If electric field is not perpendicular but has a component tangential to the surface of the conductor, it will exert force on charge and make them more. It means electrostatic condition is violated. Question 47 Why can the interior of a conductor have no excess charge in the static situation ? A Answer ¥ Set 3, 1 Marks Take any arbitrary closed surface S inside the conductor. Since electric field inside the conductor is zero, electric flux through S is also zero. Hence by Gauss’s law there is no net charge enclosed by S OR Electric field inside the conductor is zero § 2019 55 (B) Question 48 Why are electric field lines perpendicular at a point on an equipotential surface of a conductor? A Answer ¥ Set 1, 1 Marks The work done in moving a charge from one point to another on an equipotential surface is zero. If the field is not normal to an equipotential surface, it would have a non zero component along the surface. This would imply that work would have to be done to move a charge on the surface which is contradictory to the definition of equipotential surface. Alternatively Work done to move a charge 𝑑𝑞 on a surface can be expressed as − → 𝑑𝑊 = 𝑑𝑞( 𝐸® · 𝑑𝑟) But 𝑑𝑊 = 0 on an equipotential surface ∴ − → 𝐸® ⊥ 𝑑𝑟 Equipotential surfaces for a charge −𝑞 is shown alongside. Question 49 Using Gauss law, derive an expression for the electric field at a point near an infinitely long straight uniformly charged wire. A Answer ¥ 3 Marks Flux through the Gaussian Surface is equal to flux through the curved cylindrical part = E × 2𝜋𝑟𝑙 The surface includes charge equal to 𝜆𝑙 Δ𝑄 = linear charge density where, 𝜆 = Δ𝑙 Gauss’s Law then gives 𝜆𝑙 𝐸 × 2𝜋𝑟𝑙 = 𝜀◦ 𝜆 𝐸= 2𝜋𝜀◦𝑟 OR (i) An electric dipole of dipole moment 𝑝® is held in a uniform electric field 𝐸®. Show that the torque acting on the dipole is given by 𝑝® × 𝐸®. (ii) How much work is required in turning the electric dipole from the position of most stable equilibrium to that of most unstable ? A Answer ¥ 3 Marks (i) Magnitude of torque = 𝑞𝐸 × 2𝑎 sin 𝜃 = 2𝑞𝑎𝐸 sin 𝜃 = 𝑝𝐸 sin 𝜃 Its direction is normal to the plane of the paper, coming out of it. The magnitue of 𝑃® × 𝐸® Is also PE sin 𝜃 and its direction is normal to the paper, Thus 𝜏® = 𝑃® × 𝐸® (ii) Work done in turning the dipole from most stable euilibirium to most unstable equilibrium position W = 𝑈 𝑓 −𝑈𝑖 U = −pE cos 𝜃 ◦ 𝑈𝑖 = −pE cos 0 = −pE 𝑈 𝑓 − = −pE cos 180 = pE W = pE − (−p𝐸) = 2pE ◦ * Unit I Electrostatics Published by : www.cbse.page www.cuet.pw Chapter 2 Electrostatic Potential and Capacitance Weightage for CBSE Board 2024 Unit I and II Combined À Chapter 1 Weightage is À Chapter 2 16 Marks À Chapter 3 It’s not fixed which chapters will have more weightage, but overall weightage will be 16 Marks. It may vary too in your question paper. ` Syllabus Electric potential, potential difference, electric potential due to a point charge, a dipole and system of charges; equipotential surfaces, electrical potential energy of a system of two-point charges and of electric dipole in an electrostatic field. Conductors and insulators, free charges and bound charges inside a conductor. Dielectrics and electric polarization, capacitors and capacitance, combination of capacitors in series and in parallel, capacitance of a parallel plate capacitor with and without dielectric medium between the plates, energy stored in a capacitor (no derivation, formulae only). § 2024 SQP Official Question 1 Which of the following is not the property of an equipotential surface? (a) They do not cross each other. (b) The work done in carrying a charge from one point to another on an equipotential surface is zero. (c) For a uniform electric field, they are concentric spheres. (d) They can be imaginary spheres. A Answer ¥ 3 Marks Option (c) is not the property of an equipotential surface. Question 2 Assertion (A) : An electron has a higher potential energy when it is at a location associated with a negative value of potential and has a lower potential energy when at a location associated with a positive potential. Reason (R) : Electrons move from a region of higher potential to a region of lower potential. (a) Both Assertion (A) and Reason (R) are true and Reason (R) is the correct explanation of the Assertion (A). (b) Both Assertion (A) and Reason (R) are true, but Reason (R) is not the correct explanation of the Assertion (A). (c) Assertion (A) is true, but Reason (R) is false. (d) Assertion (A) is false and Reason (R) is also false. A Answer ¥ Set 1, 1 Marks Assertion (A) is true, but Reason (R) is false. Question 3 Charges (+𝑞) and (−𝑞) are placed at the points A and B respectively which are a distance 2L apart. C is the midpoint between A and B. What is the work done in moving a charge +𝑄 along the semicircle CRD. A Answer ¥ 3 Marks VC = 0 h i 𝑞 𝑞 −𝑞 1 = − VD = 4𝜋𝜀0 3L L 6𝜋𝜀0L −𝑄𝑞 W = Q [ VD − VC ] = 6𝜋𝜀0L Question 4 (i) Derive an expression for the capacitance of a parallel plate capacitor with air present between the two plates. (ii) Obtain the equivalent capacitance of the network shown in figure. For a 300 V supply, determine the charge on each capacitor. A Answer ¥ 5 Marks (i) Let the two plates be kept parallel to each other separated by a distance 𝑑 and cross-sectional area of each plate is 𝐴. Electric field by a single thin plate 𝜎 𝐸= [𝜎 = surface charge density] 2𝜖 𝑜 Outer region I (region above the plate 1), 𝜎 𝜎 𝐸= − =0 2𝜖 𝑜 2𝜖 𝑜 Outer region II (region below the plate 2) 𝜎 𝜎 𝐸= − =0 2𝜖 𝑜 2𝜖 𝑜 Therefore the total electric field due to inner region between the plates 1 and 2, the electric fields due to the two charged plates add up 𝜎 𝜎 𝜎 𝑄 + = = 𝐸= 2𝜖 𝑜 2𝜖 𝑜 𝜖 𝑜 𝜖 𝑜 𝐴 Potential difference between the plates 𝑉 = 𝐸𝑑 = 1 𝑄𝑑 𝜀0 𝐴 The capacitance 𝐶 of the parallel plate capacitor is then 𝑄 𝜀0 𝐴 𝐶= = 𝑉 𝑑 which depends only on the geometry of the system (ii) The equivalent capacitance = Charge on C4 = 200 × 10 −12 200 3 pF −8 × 300 = 2 × 10 C 3 Potential difference across −12 200 × 10 × 300 𝐶4 = = 200 V − 12 3 × 100 × 10 Potential difference across 𝐶1 = 300 − 200 = 100 V −12 −8 Charge on 𝐶1 = 100 × 10 × 100 = 1 × 10 C Potential difference across 𝐶2 and 𝐶3 series combination = 100 V Potential difference across 𝐶2 and 𝐶3 each = 50 V Charge on 𝐶2 and 𝐶3 each −12 −8 = 200 × 10 × 50 = 1 × 10 C [OR Section] (i) A dielectric slab of thickness 𝑡 is kept between the plates of a parallel plate capacitor with plate separation 𝑑 (𝑡 < 𝑑) . Derive the expression for the capacitance of the capacitor. (ii) A capacitor of capacity C1 is charged to the potential of V0. On disconnecting with the battery, it is connected with an uncharged capacitor of capacity C2 as shown in the adjoining figure. Find the ratio of energies before and after the connection of switch S. A Answer ¥ 5 Marks (i) The capacitance 𝐶 of the parallel plate capacitor is 𝑄 𝜀0 𝐴 𝐶= = 𝑉 𝑑 where 𝐴 is the area of parallel plates. Suppose that the capacitor is connected to a battery, an electric field E0 is produced. Now if we insert the dielectric slab of thickness 𝑡 = less than 𝑑 , the electric field reduces to E. Now the gap between the plates is divided in two parts, for distance 𝑡 there is electric field E and for the remaining distance (𝑑 − 𝑡) , the electric field is E0. If V be the potential difference between the plates of the capacitor, then V = E𝑡 + E0 (𝑑 − 𝑡) E0 [ Given: 𝑡 < 𝑑] = 𝐾 −→ ratio of dielectric constant E E0 1 V = 𝑡 + E0 (𝑑 − 𝑡) = E0𝑡 − 1 + E0 𝑑 𝐾 𝐾 𝜎 𝑞 As E0 = = 𝜀0 𝜀0 𝐴 𝑞 1 𝑞 V= ·𝑡 −1 + ·𝑑 𝜀0 𝐴 𝐾 𝜀0 𝐴 1 𝑞 V= 𝑡 −1 +𝑑 𝜀0 𝐴 𝐾 So finally, the capacitance when the slab of thickness 𝑡 is inserted between the parallel plates of the capacitor is 𝜀0A 𝑞 𝜀0 A 𝐾 = 𝑡 − 𝐾𝑡 + 𝐾𝑑 = 𝑉 1 −1 +𝑑 𝑡 𝐾 𝜀0 A 𝐾 𝜀0A 𝐾 ⇒𝐶= or 𝑡 − 𝐾 (𝑡 + 𝑑) 𝑡( 1 − 𝐾) + 𝐾𝑑 𝐶= Same type of question was asked in CBSE 2013 Board Exam A slab of material of dielectric constant 𝐾 has the same area as that of the plates of a parallel plate capacitor but has the thickness 𝑑/2, where 𝑑 is the separation between the plates. Find out the expression for its capacitance when the slab is inserted between the plates of the capacitor. [2013] A Solution The capacitance 𝐶 of the parallel plate capacitor is 𝑄 𝜀0 𝐴 𝐶= = 𝑉 𝑑 where 𝐴 is the area of parallel plates. Suppose that the capacitor is connected to a battery, an electric field E0 is produced. Now if we insert the dielectric slab of thickness 𝑡 = 𝑑/2, the electric field reduces to E. Now the gap between the plates is divided in two parts, for distance 𝑡 there is electric field E and for the remaining distance (𝑑 − 𝑡) , the electric field is E0. If V be the potential difference between the plates of the capacitor, then V = E𝑡 + E0 (𝑑 − 𝑡) V= E𝑑 E0 𝑑 𝑑 𝑑 + = ( E + E0 ) Given: 𝑡 = 2 2 2 2 E0 = 𝐾 −→ ratio of dielectric constant E 𝑑 E0 𝑑 E0 V= + E0 = ( 1 + 𝐾) 2 𝐾 2𝐾 𝜎 𝑞 𝑑 𝑞 = and V = · ( 1 + 𝐾) E0 = 𝜀0 𝜀0 A 2 𝐾 𝜀0 A 𝑞 2 𝐾𝜀0A 𝐶= = 𝑉 𝑑 ( 1 + 𝐾) Same type of questions can come in your exam by just twisting the question as thickness of the slab to 𝑑/4, 3/4𝑑 , etc. (ii) Let V1 be the common potential of both capacitor after the complete flow of charge. From conservation of charge we have C1V0 = ( C1 + C2) V1 C1 V0 V1 = ( C1 + C2) Energy before connecting the switch 1 2 U1 = C1V0 2 Energy after connection switch 1 2 U2 = ( C1 + C2) V1 2 2 2 C1V0 1 U2 = ( C1 + C2) 2 2 ( C1 + C2) 2 2 C1V0 1 U2 = × 2 2 ( C1 + C2) Now ratio is given by, U2 U1 = 2 2 C 1 V0 2 ( C1 + C2) × 2 2 2 C1V0 Therefore, the ratio of energies before and after the connection of switch S U2 C1 U1 = ( C1 + C2) § 2023 55(B) Compart Question 5 (i) How will the capacitance of a parallel plate capacitor change if : (1) the plates area is doubled ? (2) the separation between the plates is doubled ? (ii) The effective capacitance of three capacitors of the same capacitance connected in series is 1 F. Find the : (1) effective capacitance if they are connected in parallel. (2) ratio of energy stored in the parallel combination of the capacitors to that in the series combination, if the combinations are connected to the same source one by one. A Answer ¥ 5 Marks (i.1) 𝐶 ∝ 𝐴 Capacitance gets doubled (i.2) 𝐶 ∝ 1 𝑑 Capacitance reduces to half (ii) Given that the effective capacitance of three capacitors of the same capacitance connected in series is 1 F. 𝐶 = 1𝜇𝐹 ∴ 𝐶 = 3𝜇𝐹 3 (1) Effective capacitance in parallel 𝐶 𝑃 = 3𝐶 = 3 × 3𝜇𝐹 𝐶 𝑃 = 9𝜇𝐹 1 (2) 𝑈 = 𝐶𝑉 2 2 𝑈𝑃 𝐶 𝑝 9 = = =3:1 𝑃𝑆 𝐶 𝑆 3 Question 6 Case Study : A charged body inside an electric field. A −13 charged latex sphere of mass 1.85 × 10 kg is held stationary in between two horizontal plates which are separated by a distance 0·62 cm. The potential difference between the plates is 3 1.24 × 10 V with the upper plate being positive. Based on the above facts, answer the following questions : (i) What is the nature of charge on the latex sphere ? (ii) What is the direction of electric field between the plates ? (iii) What is the magnitude of electric field between the plates ? OR What is the magnitude of charge on the latex 2 sphere ? (Take 𝑔 = 10 ms ) A Answer (i) Negative Charge (ii) Downwards ¥ 4 Marks 𝑉 (iii) 𝐸 = 𝑑 3 𝐸= 1.24 × 10 V 0.62 × − 2 10 m 5 −1 = 2 × 10 Vm OR 𝑞𝐸 = 𝑚𝑔 −13 𝑚𝑔 1.85 × 10 × 10 𝑞= = 5 𝐸 2 × 10 −18 = 9.25 × 10 C § 2023 55/C Compart Question 7 A uniform electric field E of 500 N/C is directed along +𝑥 axis. O, B and A are three points in the field having 𝑥 and 𝑦 coordinates (in cm) ( 0, 0), ( 4, 0) and ( 0, 3) respectively. Calculate the potential difference between the points (i) O and A (ii) O and B. A Answer ¥ 2 Marks (i) VOA = E (𝑥2 − 𝑥1) = 500 × 0 = 0 V (ii) VOB = −E (𝑥2 − 𝑥1) = −500 × 4 × 10 −2 = −20 V OR Three point charges 1 𝜇 C, −1 𝜇 C and 2 𝜇 C are kept at the vertices A, B and C respectively of an equilateral triangle of side 1 m.A1, B1 and C1 are the midpoints of the sides AB, BC and CA respectively. Calculate the net amount of work done in displacing the charge from 𝐴 to 𝐴1, from 𝐵 to 𝐵1 and from 𝐶 to 𝐶1. A Answer ¥ 2 Marks Initial electrostatic potential energy of the system 𝑘 −12 Ui = [ 1 × (−1) + (−1) × 2 + ( 1) × ( 2)] × 10 𝑟 9 9 × 10 −12 = [−1 − 2 + 2] × 10 1 = −9 × 10 −3 J Now A1 B1 = B1C1 = A1C1 = 1 m 2 Final electrostatic potential energy of the system −9 × 10 𝑈𝑓 = 1/2 −9 = −18 × 10 −3 J Amount of work done W = 𝑈 𝑓 − 𝑈𝑖 −3 W = −18 × 10 + 9 × 10 −3 = −9 × 10 −3 J Question 8 A parallel plate capacitor is an arrangement of two identical metal plates kept parallel, a small distance apart. The capacitance of a capacitor depends on the size and separation of the two plates and also on the dielectric constant of the medium between the plates. Like resistors, capacitors can also be arranged in series or parallel or a combination of both. By virtue of electric field between the plates, charged capacitors store energy. (a) The capacitance of a parallel plate capacitor increases from 10 𝜇 F to 80 𝜇 F on introducing a dielectric medium between the plates. Find the dielectric constant of the medium. A Answer ¥ Set 1, 1 Marks 𝐶 80 𝜇𝐹 𝐾= = =8 𝐶0 10 𝜇𝐹 (b) n capacitors, each of capacitance C, are connected in series. Find the equivalent capacitance of the combination. A Answer 1 𝐶𝑆 = 1 𝐶1 𝑛 1 = 𝐶𝑆 𝐶 + 1 ¥ Set 1, 1 Marks +.........+ 𝐶2 1 𝐶𝑛 𝐶 Therefore, 𝐶𝑆 = 𝑛 (c) A capacitor is charged to a potential (V) by connecting it to a battery. After some time, the battery is disconnected and a dielectric is introduced between the plates. How will the potential difference between the plates, and the energy stored in it be affected ? Justify your answer. OR Find the equivalent capacitance between points A and B, if capacitance of each capacitor is C. A Answer ¥ 2 Marks The charge on the plates does not change as the capacitor is disconnected from the battery. The presence of dielectric slab increases the capacitance, which decreases the potential difference. Thus, the energy stored is reduced. Charge is constant. 𝑄1 = 𝑄2 𝑉1 𝑉2 = 𝐾 𝐶2 = 𝐾𝐶1 𝐶1𝑉1 = 𝐾𝐶1𝑉2 Potential difference decreases by a factor 1𝑄 2 1𝑄 2 1 2 1 𝐾 𝑄 𝑉2 = = = 2 𝐶2 2 𝐾𝐶1 𝐾 2𝐶2 OR As we can see, the capacitors form a Wheatstone bridge. The effective capacitance between M and N is the sum of effective capacitance between P and Q and the effective capacitance between S and T. 𝐶 𝑀𝑁 = 𝐶 𝑃𝑄 + 𝐶𝑆𝑇 Wheatstone bridges can be divided into two halves which have similar capacitance. ∴ 𝐶 𝑃𝑄 = 𝐶𝑆𝑇 The capacitance 𝐶 𝑃𝑄 is the reciprocal of the sums of the reciprocal of the capacitances P and Q. 𝐶 𝑃𝑄 = 1 1 𝐶𝑃 + 1 𝐶𝑄 The capacitance of the capacitor 𝑃 is 𝐶 and capacitance of 𝑄 is 𝐶 . 1 𝐶 𝑃𝑄 = 𝐶 𝑃 = 𝐶, 𝐶𝑄 = 𝐶 1 1 + 𝐶𝑃 𝐶 𝑃𝑄 = 1 1 𝐶 + 𝐶𝑄 1 𝐶 = = 1 2 2 𝐶 𝐶 The capacitance 𝐶 𝑃𝑄 is equal to the capacitance 𝐶𝑆𝑇 𝐶 𝑃𝑄 = 𝐶𝑆𝑇 = 𝐶 2 =⇒ 𝐶 𝑀𝑁 = 𝐶 𝑃𝑄 + 𝐶𝑆𝑇 = =⇒ 𝐶 𝑀𝑁 = 1𝐶 𝐶 2 + 𝐶 2 The effective capacitance between the point M and point N is 1C. Now only two capacitors in parallel left between A and B, so the effective capacitance between the point A and point B is ( 1 + 1) C = 2C. § 2023 55/1/1 All Sets Question 9 (a) Twelve negative charges of same magnitude are equally spaced and fixed on the circumference of a circle of radius R as shown in Fig. (i). Relative to potential being zero at infinity, find the electric potential and electric field at the centre C of the circle. (b) If the charges are unequally spaced and fixed on an arc of 120° of radius R as shown in Fig. (ii), find electric potential at the centre C. A Answer ¥ 3 Marks (a) Electric potential due to point charge 𝑘𝑞 V= 𝑅 Value of each charge = −𝑞, Total charge = −12𝑞 𝑘(−12𝑞) Total potential V = 𝑅 −12𝑘𝑞 −12𝑞 = V= 𝑅 4𝜋 ∈0 𝑅 By symmetry the resultant of all electric field vectors becomes zero. So electric field is zero. (b) Electric potential is a scalar quantity and does not depend on placement of charges −12𝑘𝑞 −12𝑞 Therefore V = = 𝑅 4𝜋 ∈0 𝑅 Question 10 A 100 𝜇 F capacitor is charged by a 12 V battery. (a) How much electrostatic energy is stored by the capacitor ? (b) The capacitor is disconnected from the battery and connected in parallel to another uncharged 100 𝜇 F capacitor. What is the electrostatic energy stored by the system ? A Answer ¥ Set 2, 3 Marks −6 C = 100 𝜇𝐹 = 100 × 10 𝐹, 𝑉 = 12 V 1 2 1 −6 (a) U = 𝐶𝑉 = × 100 × 10 2 2 1 −4 = × 10 × 144 2 = 72 × 10 −4 × ( 12) 2 J = 7.2 m J (b) Ceq = C1 + C2 = 200 𝜇𝐹 −6 −4 𝑄 = 𝐶𝑉 = 100 × 10 × 12 = 12 × 10 C 2 − 4 2 12 × 10 𝑄 144 −4 𝑈= = = × 10 − 6 2𝐶𝑒𝑞 2 × 200 × 10 4 = 36 × 10 −4 J = 3.6 m J Question 11 Three point charges Q1 (−15 𝜇 C) , Q2 ( 10 𝜇 C) and Q3 ( 16 𝜇 C) are located at (0 cm, 0 cm),(0 cm, 3 cm) and (4 cm, 3 cm) respectively. Calculate the electrostatic potential energy of this system of charges. A Answer ¥ Set 3, 3 Marks 1 𝑄1𝑄2 UQ1Q2 = 4𝜋 ∈𝑜 𝑟12 −6 9 −6 × 10 × 10 9 × 10 × −15 × 10 = − 2 3 × 10 = −45 J 1 𝑄2𝑄3 UQ2Q3 = 4𝜋 ∈𝑜 𝑟23 9 −6 −6 9 × 10 × 10 × 10 × 16 × 10 = 4 × 10−2 = 36 J 1 𝑄1𝑄3 UQ1Q3 = 4𝜋 ∈𝑜 𝑟13 9 −6 −6 9 × 10 × −15 × 10 × 16 × 10 = 5 × 10−2 = −43.2 J Unet = UQ1Q2 + UQ2Q3 + UQ1Q3 = −45 + 36 − 43.2 = −52.2 J § 2023 55/2/1 All Sets Question 12 A point P lies at a distance 𝑥 from the mid point of an electric dipole on its axis. The electric potential at point P is proportional to 1 1 1 1 (a) 2 (b) 3 (c) 4 (d) 1/2 𝑥 𝑥 𝑥 A Answer 𝑥 ¥ Set 1, 1 Marks If you know the formula of electric potential due to dipole which is 1 𝑝 𝑉 =± 4𝜋𝜖𝑜 𝑟 2 1 From formula it is clear that 𝑉 ∝ 2 𝑟 1 So 2 is the correct option. 𝑥 Question 13 A point charge 𝑞0 is moving along a circular path of radius a, with a point charge −𝑄 at the centre of the circle. The kinetic energy of 𝑞0 is 𝑞0 𝑄 (a) 4𝜋𝜖0a 𝑞0 𝑄 (c) 4𝜋𝜖0a2 𝑞0 𝑄 (b) 8𝜋𝜖0a 𝑞0 𝑄 (d) 8𝜋𝜖0a2 A Answer ¥ Set 3, 1 Marks To find the kinetic energy of the moving point charge 𝑞0, we need to consider the electrostatic potential energy between the charges and the kinetic energy of the charge in motion. The electrostatic potential energy between two point charges 𝑞0 and 𝑄 separated by a distance 𝑟 is given by: 𝑘 · |𝑞0 · 𝑄| 𝑈= , 𝑟 ▲ 𝑘 is Coulomb’s constant, 𝑘 = 1 4𝜋𝜖0 2 2 9 approximately equal to 9 × 10 N m /C , ▲ 𝑟 is the distance between the charges, and ▲ |𝑞0 · 𝑄| is the product of their magnitudes. The kinetic energy 𝐾 of the moving point charge 𝑞 is given by: 1 2 𝐾 = 𝑚𝑣 , 2 where 𝑚 is the mass of the moving point charge, and 𝑣 is its velocity. Since 𝑞 is moving in a circular path of radius 𝑎 around the charge −𝑄 at the center, there must be a centripetal force acting on 𝑞 to keep it in circular motion. This force is provided by the electrostatic force between the two charges. At any point on the circular path, the electrostatic force (𝐹𝑒) between 𝑞 and −𝑄 is given by Coulomb’s law: 𝑘 · |𝑞 · 𝑄| 1 𝐹𝑒 = , where 𝑘 = 2 𝑎 4𝜋𝜖0 where 𝑎 is the radius of the circular path. The centripetal force (𝐹𝑐) required to keep 𝑞 in circular motion is: 2 𝑚𝑣 𝐹𝑐 = 𝑎 Since 𝐹𝑐 = 𝐹𝑒, we can equate the two expressions: 2 𝑚𝑣 𝑘 · |𝑞 · 𝑄| = 𝑎 𝑎2 2 Solving for 𝑣 , we get: 𝑘 · |𝑞 · 𝑄| . 𝑣 = 𝑚·𝑎 2 Now, substituting this value of 𝑣 into the 2 expression for kinetic energy, we get: 1 𝑘 · |𝑞 · 𝑄| 𝑘 · |𝑞 · 𝑄| = 𝐾 = 𝑚· 2 𝑚·𝑎 2𝑎 1 𝑞𝑄 Replacing by 𝑘 = , we get 4𝜋𝜖0 8𝜋𝜖0a To explain you line by line, the answer has become long but you don’t have to write so long in your answer sheet. Just write the correct option as it’s of 1 Mark only. Question 14 Two charged conducting spheres of radii a and b are connected to each other by a wire. Find the ratio of the electric fields at their surfaces. A Answer ¥ 3 Marks When connected by a conducting wire both spheres will be at the same potential. 𝑞2 1 𝑞1 where 𝑘 = ∴𝑉 =𝑘 =𝑘 𝑎 𝑏 4𝜋𝜖0 1 𝑄 ∵ 𝑉 (𝑟) = 4𝜋𝜖0 𝑟 𝑞1 𝑎 ∴ = 𝑞2 𝑏 𝑞1 𝑘 2 𝐸1 𝑏 𝑎 = 𝑞 = 𝐸2 𝑘 2 𝑎 𝑏2 OR A parallel plate capacitor (A) of capacitance C is charged by a battery to voltage V. The battery is disconnected and an uncharged capacitor (B) of capacitance 2C is connected across A. Find the ratio of (i) final charges on A and B. (ii) total electrostatic energy stored in A and B finally and that stored in A initially. A Answer ¥ 3 Marks (i) Initially 𝑄 = 𝐶𝑉 Finally 𝑞 𝐴 = 𝐶 𝐴𝑉1 𝑞𝐴 𝐶 𝐴 1 = 𝑞𝐵 = 𝐶𝐵 & 𝑞𝐵 = 𝐶 𝐵𝑉1 2 (ii) 𝑞 𝐴 + 𝑞𝑏 = 𝑄 ∴ 𝑞𝐴 = 𝑄 & 3 𝑈 𝑓 𝑈 𝐴 + 𝑈𝐵 = 𝑈𝑖 𝑈 𝐴𝑖 2 2 𝑞𝐵 𝑞𝐴 + 2𝐶 𝐴 2𝐶 𝐵 1 = = 2 3 𝑄 2𝐶 𝐴 Alternatively, Common potential 𝑄1 + 𝑄2 𝑉1 = 𝐶1 + 𝐶2 𝑄 𝑉 = = 3𝐶 3 1 2 𝑒𝑞 1 𝐶 𝑉 𝑈𝑓 2 = 𝑈𝑖 1 2 𝐶 𝐴𝑉 2 𝑄 ∵ =𝑉 𝐶 𝑞𝐵 = 2𝑄 3 1 = 2 3𝐶 × 1 2 2 𝑉 𝐶𝑉 3 = 2 1 3 Question 15 (i) Consider two identical point charges located at points ( 0, 0) and ( a, 0) . (1) Is there a point on the line joining them at which the electric field is zero? (2) Is there a point on the line joining them at which the electric potential is zero? Justify your answers for each case. (ii) State the significance of negative value of electrostatic potential energy of a system of charges. Three charges are placed at the corners of an equilateral triangle ABC of side 2.0 m as shown in figure. Calculate the electric potential energy of the system of three charges. A Answer ¥ 5 Marks (i.1) Yes , electric field is zero at mid point. Electric field being a vector quantity, its resultant is zero. (i.2) No, potential cannot be zero on line joining the charges. Electric potential being a scalar quantity, the net potential due to two identical charges cannot be zero. (ii) Negative value of electrostatic potential energy of a system signifies that the system has attractive forces and is stable. 1 𝑞1𝑞2 𝑈= × 4𝜋𝜖0 𝑟 h i 𝑞 𝐴𝑞 𝐵 𝑞 𝐵𝑞𝑐 𝑞𝑐 𝑞 𝐴 1 + + 𝑈= 4𝜋𝜖0 𝑟 𝑟 𝑟 9 9 × 10 −12 [−16 − 8 + 8] × 10 = 2 −2 = −7.2 × 10 J § 2023 55/3/1 All Sets Question 16 (i) Define electric potential at a point and write its SI unit. (ii) Two capacitors are connected in series. Derive an expression of the equivalent capacitance of the combination. (iii) Two point charges +𝑞 and −𝑞 are located at points ( 3𝑎, 0) and ( 0, 4𝑎) respectively in 𝑥 − 𝑦 plane. A third charge 𝑄 is kept at the origin. Find the value of 𝑄, in terms of 𝑞 and 𝑎, so that the electrostatic potential energy of the system is zero. A Answer ¥ 5 Marks (i) Electrostatic potential at any point in a region with electrostatic field is the work done in bringing a unit positive charge (without acceleration) from infinity to that point. 𝑉= Work Done =− ∫ → − 𝐸® · 𝑑𝑙 𝑞 S.I. unit of electrostatic potential is Volt or J/C. (ii) 𝑄 𝑄 𝑉 = 𝑉1 + 𝑉2 = + 𝐶 𝐶 1 2 𝑄 1 1 =𝑄 + 𝐶𝑒𝑞. 𝐶1 𝐶2 1 = 𝐶𝑒𝑞. 1 𝐶1 1 + 𝐶2 (iii) Potential energy of the system 2 −𝑄𝑞 𝑄𝑞 𝑞 = + − 4𝑎 3𝑎 5𝑎 2 −𝑄𝑞 𝑄𝑞 𝑞 ∴𝐾 + − =0 4𝑎 3𝑎 5𝑎 −𝑄 𝑄 𝑞 𝑄 𝑞 ⇒ + − =0 ⇒+ − =0 4 ⇒𝑄=+ 3 5 12𝑞 5 12 5 § 2023 55/4/1 All Sets Question 17 Obtain an expression for electrostatic potential energy of a system of three charges 𝑞, 2𝑞 and −3𝑞 placed at the vertices of an equilateral triangle of side 𝑎. A Answer ¥ 2 Marks 1 𝑞1𝑞2 𝑈= · 4𝜋𝜖0 𝑟 2 2 2 1 2𝑞 6𝑞 3𝑞 𝑈= − − 4𝜋𝜖0 𝑎 𝑎 𝑎 2 1 −7 𝑞 𝑈= 4𝜋𝜖0 𝑎 OR Two small conducting balls A and B of radius 𝑟1 and 𝑟2 have charges 𝑞1 and 𝑞2 respectively. They are connected by a wire. Obtain the expression for charges on A and B, in equilibrium. A Answer ¥ 2 Marks According to law of conservation of charge 𝑞𝑖 = 𝑞 𝑓 ′ ′ 𝑞1 + 𝑞2 = 𝑞1 + 𝑞2 = 𝑄 When two balls are connected with wire 𝑉1 = 𝑉2 ′ ′ ′ ′ 𝑘𝑞1 𝑘𝑞2 𝑞1 𝑞2 = or = 𝑟1 𝑟2 𝑟1 𝑟2 ′ ′ 𝑞1𝑟2 = 𝑞2𝑟1 ′ ′ 𝑞1𝑟2 = 𝑄 − 𝑞1 𝑟1 ′ ′ 𝑞1𝑟2 = 𝑄𝑟1 − 𝑞1𝑟1 ′ 𝑞1 (𝑟1 + 𝑟2) = 𝑄𝑟1 (𝑞1 + 𝑞2) 𝑟1 𝑄𝑟1 = 𝑞1 = 𝑟1 + 𝑟2 𝑟1 + 𝑟2 (𝑞 ) 𝑄𝑟 𝑄𝑟 + 𝑞 𝑟 1 2 1 2 2 ′ ′ 𝑞2 = 𝑄 − 𝑞1 = 𝑄 − = = 𝑟1 + 𝑟2 𝑟1 + 𝑟2 𝑟1 + 𝑟2 ′ Question 18 Electrostatics deals with the study of forces, fields and potentials arising from static charges. Force and electric field, due to a point charge is basically determined by Coulomb’s law. For symmetric charge configurations, Gauss’s law, which is also based on Coulomb’s law, helps us to find the electric field. A charge/a system of charges like a dipole experience a force/torque in an electric field. Work is required to be done to provide a specific orientation to a dipole with respect to an electric field. Answer the following questions based on the above : (a) Consider a uniformly charged thin conducting shell of radius R. Plot a graph showing the → − variation of | E | with distance 𝑟 from the centre, for points 0 ≤ r ≤ 3R. A Answer ¥ Set 1, 1 Marks (b) The figure shows the variation of potential 𝑉 with 1/r for two point charges Q1 and Q2, where V is the potential at a distance r due to a point charge. Find Q1/Q2. A Answer 𝑄 V=𝑘 ¥ Set 1, 1 Marks r Slope of graph is proportional to 𝑄 𝑄1 tan 60 = = 3 ◦ 𝑄2 tan 30 ◦ (c) An electric dipole of dipole moment of −7 6 × 10 C − m is kept in a uniform electric field 4 of 10 N/C such that the dipole moment and the electric field are parallel. Calculate the potential energy of the dipole. A Answer 𝑈 = −𝑝𝐸 cos 𝜃 ◦ 𝜃=0 4 −7 𝑈 = − 6 × 10 × 10 −3 𝑈 = −6 × 10 J ¥ 2 Marks OR An electric dipole of dipole moment 𝑝® is initially → − → − kept in a uniform electric field E such that p is → − perpendicular to E . Find the amount of work done in rotating the dipole to a position at which → − 𝑝® becomes antiparallel to E . A Answer ¥ 2 Marks Work done W = −pE ( cos 𝜃2 − cos 𝜃1) where 𝜃2 = 180 , 𝜃1 = 90 ◦ ◦ ◦ ◦ ⇒ W = −pE ( cos 180 − cos 90 ) W = +pE § 2023 55/5/1 All Sets Question 19 The capacitors, each of 4 𝜇 F are to be connected in such a way that the effective capacitance of the combination is 6 𝜇 F. This can be achieved by connecting (a) All three in parallel (b) All three in series (c) Two of them connected in series and the combination in parallel to the third. (d) Two of them connected in parallel and the combination in series to the third. A Answer ¥ Set 1, 1 Marks Two of them connected in series and the combination in parallel to the third Question 20 Depict the orientation of an electric dipole in (a) stable (b) unstable equilibrium in an external uniform electric field. Write the potential energy of the dipole in each case. A Answer ¥ 2 Marks (a) 𝑈 = −𝑝𝐸 (b) 𝑈 = 𝑝𝐸 𝜃 = 0° 𝜃 = 180° Question 21 Three point charges 𝑄, 𝑞 and −𝑞 are kept at the vertices of an equilateral triangle of side L as shown in figure. What is (i) the electrostatic potential energy of the arrangement? (ii) the potential at point D ? A Answer ¥ Set 3, 1 Marks 2 𝑘𝑄𝑞 𝑘𝑄𝑞 𝑘𝑞 + − (i) 𝑈 = − 𝐿 𝐿 𝐿 2 𝑘𝑞 𝑈=− 𝐿 (ii) 𝑉 = 𝑉𝐷𝐴 + 𝑉𝐷𝐵 + 𝑉𝐷𝐶 2 𝐾𝑄 2 𝐾𝑞 2 𝐾𝑞 + 𝑉= √ − 𝐿 𝐿 𝐿 3 2 𝐾𝑄 𝑉= √ 𝐿 3 Question 22 A capacitor is a system of two conductors separated by an insulator. The two conductors have equal and opposite charges with a potential difference between them. The capacitance of a capacitor depends on the geometrical configuration (shape, size and separation) of the system and also on the nature of the insulator separating the two conductors. They are used to store charges. Like resistors, capacitors can be arranged in series or parallel or a combination of both to obtain desired value of capacitance. (i) Find the equivalent capacitance between points A and B in the given diagram (ii) A dielectric slab is inserted between the plates of a parallel plate capacitor. The electric field between the plates decreases. Explain. (iii) A capacitor A of capacitance C, having charge Q is connected across another uncharged capacitor B of capacitance 2C. Find an expression for (a) the potential difference across the combination (b) the charge lost by capacitor A. OR Two slabs of dielectric constants 2K and K fill the space between the plates of a parallel plate capacitor of plate area A and plate separation 𝑑 as shown in figure. Find an expression for capacitance of the system. A Answer ¥ 4 Marks (i) 𝐶net = 𝐶 + 𝐶 = 2𝐶 (ii) Within the dielectric slab, the induced electric field due to polarization decreases the electric field. As the dielectric slab is introduced there is some charge distribution in the slab and because of this the electric field between the two plates is decreased, due to which the capacitor can hold more charge. Thus, the capacity to hold charge of the capacitor is increased. E0 E= (iii) (a) 𝐾 𝑄 𝑄Total = 𝑉 = 𝐶eqi 3𝐶 𝑄 𝑉 ′ 𝑉 = = 3𝐶 3 ′ (b) ′ 𝑄𝐴 =𝐶× 𝑉 3 = 𝑄 3 𝑄 𝐴 = 𝐶𝑉 = 𝑄 Charge lost by capacitor A is Δ𝑄 = 𝑄 − 𝑄 3 = 2𝑄 OR Capacitance of left portion, C1 = 3 6 𝐾 ∈0 𝐴 𝑑 3 𝐾 ∈0 𝐴 Capacitance of right portion, C2 = 2𝑑 As the capacitors are in series 1 1 1 + = 𝐶𝑒𝑞𝑖 1 𝐶1 𝐶2 𝑑 2𝑑 5𝑑 = + = 𝐶𝑒𝑞𝑖 6𝐾 ∈0 𝐴 3𝐾 ∈0 𝐴 6𝐾 𝐴 ∈0 6 𝐾 𝐴 ∈0 𝐶𝑒𝑞𝑖 = 5𝑑 § 2022 Term I 55/2 Question 23 The electric potential V at any point (𝑥, 𝑦, 𝑧) is 2 given by V = 3𝑥 where 𝑥 is in metres and V in volts. The electric field at the point (1 m, 0, 2 m) (a) 6 V/m along −𝑥 -axis (b) 6 V/m along +𝑥 -axis (c) 1.5 V/m along −𝑥 -axis (d) 1.5 V/m along +𝑥 -axis A Answer −𝑑 V 𝑑 2 E= =− 3 𝑥 = −6 𝑥 𝑑𝑥 𝑑𝑥 Putting 𝑥 = 1, E = 6 V/m along −𝑥 direction. ¥ Set 1, 1 Marks Question 24 Which of the diagrams correctly represents the electric field between two charged plates if a neutral conductor is placed in between the plates? A Answer ¥ Set 1, 1 Marks Option (d) is correct. Upper side of the neutral conductor will be negatively charged. Lower side of the neutral conductor will be positively charged. Then the field lines will be from negative to positive as shown in the diagram. Question 25 A variable capacitor is connected to a 200 V battery. If its capacitance is changed from 2 𝜇 F to X 𝜇 F, the decrease in energy of the capacitor is (a) 1 𝜇 F (b) 2 𝜇 F (c) 3 𝜇 F (d) 4 𝜇 F A Answer 1 ¥ Set 1, 1 Marks 2 Energy = CV 2 1 −6 2 −2 E1 = × 2 × 10 × 200 = 4 × 10 J 2 1 −6 2 E2 = × (𝑋) × 10 × 200 J 2 Decrease in energy = E1 − E2 −2 −2 −2 ⇒ 2 × 10 = 4 × 10 − 2 × ( X) × 10 ⇒ 2 = 4 − 2𝑋 ∴ X = 1𝜇 F Question 26 A +3.0nC charge 𝑄 is initially at rest at a distance of 𝑟1 = 10 cm from a +5.0nC charge 𝑞 fixed at the origin. The charge 𝑄 is moved away from 𝑞 to a new position at 𝑟2 = 15 cm. In this process work done by the field is −5 5 (a) 1.29 × 10 J (b) 3.6 × 10 J (c) −4.5 × 10 −7 J A Answer (d) 4.5 × 10 −7 J ¥ Set 1, 1 Marks Work done = 𝑈𝑖 − 𝑈 𝑓 1 1 1 1 = 𝑘𝑞𝑄 − = 𝑘𝑞𝑄 − 15 10 𝑟1 𝑟2 100 100 1 𝑘𝑞𝑄 1 𝑘𝑞𝑄 1 − = = − 2 − 2 ( 10 ) 10 15 ( 10 ) 30 9 −9 −9 9 × 10 × 5 × 10 × 3 × 10 1 = − 2 ( 10 ) 30 −7 = 4.5 × 10 J Question 27 A car battery is charged by a 12 V supply, and 5 energy stored in it is 7.20 × 10 J. The charge passed through the battery is 4 3 (a) 6.0 × 10 C (b) 5.8 × 10 J 6 5 (c) 8.64 × 10 J (d) 1.6 × 10 C A Answer 𝑄 = 𝑊/𝑉 5 = 7.2 × 10 /12 4 = 6 × 10 C ¥ Set 1, 1 Marks Question 28 Two charges 14 mC and −4 𝜇 C are placed at (−12 cm, 0, 0) and (12 cm, 0, 0) in an external 𝐵 electric field 𝐸 = 2 𝑟 6 2 where 𝐵 = 1.2 × 10 N/(cm ) and 𝑟 is in metres. The electrostatic potential energy of the configuration is (a) 97.9 J (b) 102.1 J (c) 2.1 J (d) –97.9 J A Answer ¥ Set 1, 1 Marks Potential energy of the system = the total work done in assembling the configuration 𝑞1𝑞2 𝑘𝑞1𝑞2 = 𝑞1𝑉 + 𝑞2𝑉 + = 𝑞1𝑉 + 𝑞2𝑉 + 4𝜋𝜖0𝑟 𝑟 " # |𝛿𝑉 | |𝛿𝑉 | =+ As we know, | E | = − 𝛿𝑙 𝛿𝑙 6 𝐵 𝐵 1.2 × 10 𝑉 = 𝐸𝑟 = 2 𝑟 = = 𝑟 𝑟 𝑟 6 1.2 × 10 −6 = 𝑞1𝑉 + 𝑞2𝑉 = ( 14 − 4 ) × 10 12 × 10−2 9 −6 −6 𝑘𝑞1𝑞2 9 × 10 × 14 × 10 × 4 × 10 And, =− − 2 ( 24 × 10 ) 𝑟 Therefore, combining all 𝑘𝑞1𝑞2 = 100 − 2.1 = 97.9 J = 𝑞1𝑉 + 𝑞2𝑉 + 𝑟 Question 29 Equipotentials at a large distance from a collection of charges whose total sum is not zero are (a) spheres (b) planes A Answer (c) ellipsoids (d) paraboloids ¥ Set 1, 1 Marks (a) spheres is the correct answer. The collection of charges, whose total sum is not zero, at great distance may be considered as a point charge. So, potential is inversely proportional to the distance from the charge. So, electric potentials due to point charge are the same for all equidistant points. The locus of these equidistant points, which are at same potential, is a sphere. Question 30 Four charges −𝑞, −𝑞, +𝑞 and +𝑞 are placed at the corners of a square of side 2L is shown in figure. The electric potential at point A midway between the two charges +𝑞 and +𝑞 is (a) 1 2𝑞 1 1−√ 4𝜋𝜀0 L 5 1 1 𝑞 1−√ (c) 4𝜋𝜀0 2L 5 A Answer (b) 1 2𝑞 1+√ 4𝜋𝜀0 L 5 (d) zero ¥ Set 1, 1 Marks Electric potential due to two +𝑞 charges 1 2𝑞 = 4𝜋𝜀0 × 𝐿 1 Electric potential due to two −𝑞 charges 1 −2 𝑞 = ×√ 4𝜋𝜀0 5𝐿 Total potential at A = 1 4𝜋𝜀0 × 2𝑞 1 1−√ 𝐿 5 § 2021 55/C Compart Question 31 (i.a) Why does the electric field inside a dielectric slab decrease when kept in an external electric field? (i.b) Derive an expression for the capacitance of a parallel plate capacitor filled with a medium of dielectric constant K. (ii) A charge 𝑞 = 2 𝜇 C is placed at the centre of a sphere of radius 20 cm. What is the amount of work done in moving 4 𝜇 C from one point to another point on its surface? ® of a (iii) Write a relation for polarisation P dielectric material in the presence of an external electric field. A Answer ¥ 5 Marks (i.a) A dielectric material gets polarized when it is placed in an external electric field. The field produced due to the polarization of material reduces the effect of external electric field. Hence, the electric field inside a dielectric decreases. (i.b) Electric field in vacuum between the plates 𝜎 = E0 = 𝜀𝑜 Electric field in dielectric between the plates, 𝐸0 E= 𝐾 Potential difference between the capacitor plates V = Et + E0 ( d − t) where ’ 𝑡 ’ is the thickness of dielectric slab. 𝐸0 V = t + E0 ( d − t) 𝐾 𝜎 𝑡 𝜎 𝑡 + 𝐾 (𝑑 − 𝑡) V= + ( d − t) = 𝜀𝑜 𝐾 𝜀𝑜 𝐾 𝜀0 𝐴𝐾 𝑄 ⇒C= As C = 𝑉 𝑡 + 𝐾 (𝑑 − 𝑡) (ii) The surface of the sphere is equipotential. So, the work done in moving the charge from one point to the other is zero. W = 𝑞ΔV = 0 (∵ ΔV = 0) (iii) 𝑃 = 𝜖𝑜 𝜒𝑒 𝐸 Theory Recap Relation between Dielectric and Polarisation The dipole moment per unit volume is called polarisation and is denoted by P. For linear isotropic dielectrics, 𝑃 = 𝜖𝑜 𝜒𝑒 𝐸 where 𝜒𝑒 is a constant characteristic of the dielectric and is known as the electric susceptibility of the dielectric medium. OR (i) Obtain an expression for the potential energy of an electric dipole placed in a uniform electric field. (ii) Three capacitors of capacitance C1, C2 and C3 are connected in series to a source of V volt. Show that the total energy stored in the combination of capacitors is equal to sum of the energy stored in individual capacitors. (iii) A capacitor of capacitance C is connected across a battery. After charging, the battery is disconnected and the separation between the plates is doubled. How will (a) the capacitance of the capacitor, and (b) the electric field between the plates be affected ? Justify your answer. A Answer ¥ 5 Marks (i) Consider a dipole with charges 𝑞1 = +𝑞 and 𝑞2 = −𝑞 is placed in a uniform electric field E, as shown in Fig The dipole experiences no net force; but experiences a torque 𝝉 given by 𝝉 = p × E which will tend to rotate it (unless p is parallel or antiparallel to E ). Suppose an external torque 𝝉ext is applied in such a manner that it just neutralizes this torque and rotates it in the plane of paper from angle 𝜃𝑜 to angle 𝜃1 at an infinitesimal angular speed and without angular acceleration. The amount of work done by the external torque will be given by ∫ ∫ 𝜃1 𝜃1 𝜏𝑒𝑥𝑡 (𝜃)𝑑𝜃 = 𝑊= 𝜃0 𝑝𝐸 sin 𝜃𝑑𝜃 𝜃0 W = U = 𝑝𝐸 ( cos 𝜃0 − cos 𝜃1) (ii) U = 1 𝐶eff U= 1𝑄 2 2 𝐶eff = 1 + 𝐶1 1𝑄 + 𝐶2 2 2 𝐶1 1 + 1𝑄 1 𝐶3 2 2 𝐶2 + 1𝑄 2 2 𝐶3 U = U1 + U2 + U3 (iii) When battery is disconnected then charge (𝑞) remains constant. (a) Capacitance is halved 𝜀𝑜 𝐴 𝐶 C = = 2𝑑 2 ′ (b) Electric field (E) is unaffected. 𝑞 𝜎 𝐸= = 𝜀 𝜀𝑜 𝐴 Alternatively for effect on electric field. 𝑉 E= 𝑑 𝑄 𝑄 ′ = 2V V = ′= 𝐶 𝐶/2 ′ 𝑉 2 𝑉 𝑉 ′ E = = = =E 𝑑′ 2𝑑 𝑑 § 2020 55/C All Sets Question 32 A charge particle is placed between the plates of a charged parallel plate capacitor. It experiences a force F. If one of the plates is removed, the force on the charge particle becomes F (a) F (b) 2F (c) (d) Zero 2 A Answer ¥ Set 1, 1 Marks F is the correct option. 2 Question 33 An air-filled parallel plate capacitor is connected across a battery. After it is fully charged, the battery is disconnected. Now a dielectric slab is inserted between the plates of the capacitor to fill the space completely. Then the (a) capacitance will decrease. (b) electric field between the plates will increase. (c) potential difference between the plates will increase. (d) charge on plates will remain the same. A Answer ¥ Set 2, 1 Marks (d) change on plates will remain the same Question 34 Two point charges 𝑞 and −𝑞 are located at ( 0, 0, −𝑎) and ( 0, 0, 𝑎) respectively. (a) Depict the equipotential surfaces due to this arrangement. (b) Find the amount of work done in moving a small test charge q0 from point (𝑙, 0, 0) to ( 0, 0, 0) A Answer ¥ 2 Marks (a) (b) W = 𝑞0 ΔV As a small test charge 𝑞0 is moving along 𝑥−axis which is equipotential line for a given system, therefore ΔV = 0, Hence W = 0 Question 35 (a) Consider a system of two parallel metal plates of area 𝐴, each placed at a separation 𝑑 in air. Derive the expression for the capacitance of this parallel plate capacitor. (b) If the two plates of the capacitor have +𝑞 and −𝑞 charges, respectively, find the force experienced by the negative plate due to the positive plate. (c) A network of four capacitors each of capacitance 12 𝜇 F is connected to a battery as shown in the figure. Find the total charge stored in the network. A Answer ¥ 5 Marks (a) Electric field believes the plates of parallel plate capacitor. 𝜎 𝑄 = E= 𝜖0 𝐴𝜖0 𝜎 We know V = Ed = 𝑑 𝐴𝜖0 𝑄 𝜖0 𝐴 As capacitance C = = 𝑉 𝑑 (b) Electric Field due to the positive plate on the negative plate 𝜎 𝜎 E= = 2𝜖0 2 𝐴𝜖0 Hence Force experienced by negative plate due to positive plate 2 𝑞 𝑞 F = −qE = −𝑞 × =− 2 𝐴𝜖0 2 𝐴𝜖0 −𝑣𝑒 sign shows attractive force. (c) C2, C3 and C4 are connected in series. 1 𝐶𝑠 = 1 + 1 𝐶2 𝐶3 Cs = 4 𝜇 F + 1 𝐶4 = 1 12 + 1 12 + 1 12 Equivalent capacitance of the Network C = Cs + C4 = 4𝜇 F + 12 𝜇 F = 16 𝜇 F Total charge −16 𝑄 = 𝐶𝑉 = 16 × 10 × 100 = 1600𝜇𝐶 Question 36 Define the SI unit of capacitance. A Answer ¥ Set 3, 1 Marks When a charge of one coulomb develop potential of one volt between the plates of capacitor its capacity is said to be one farad. −1 1 F = 1 CV § 2020 55/5/1 All Sets Question 37 −1 The physical quantity having SI unit NC A Answer m is ¥ Set 1, 1 Marks Electrostatic potential difference or Electric potential Question 38 Obtain the expression for the energy stored in a capacitor connected across a dc battery. Hence define energy density of the capacitor. A Answer ¥ 2 Marks Let the charge on the capacitor plates at any instant, during charging process be 𝑞, amount of work done to supply further charge 𝑑𝑞 to the capacitor 𝑑𝑊 = 𝑉 𝑑𝑞 where 𝑉 is the potential difference and 𝑞 equals to 𝐶 Total work done to charge the capacitor upto charge 𝑄 ∫ 𝑄 𝑊= 𝑉 𝑑𝑞 ∫0 𝑄 2 𝑄 1 2 1 𝑞 𝑑𝑞 = 𝐶𝑉 = 𝑄𝑉 = 2𝐶 2 2 0 𝐶 Since Energy stored = work done 2 𝑄 1 2 1 ⇒𝑈 = 𝐶𝑉 = 𝑄𝑉 2𝐶 2 2 Energy density: Electrical energy stored per unit volume is known as energy density. 1 2 1𝜎 2 Energy density = 𝜀0 𝐸 = 2 2 𝜀0 Question 39 (a) Two point charges 𝑞1 and 𝑞2 are kept at a distance of 𝑟12 in air. Deduce the expression for the electrostatic potential energy of this system. (b) If an external electric field (𝐸) is applied on the system, write the expression for the total energy of this system. A Answer ¥ 2 Marks (a) Work done in bringing the charge 𝑞2, from infinity, to a point = 𝑞2 × potential at the point due to charge 𝑞1 = 𝑞2 × 1 q1 4𝜋𝜀0 𝑟12 ∴ potential energy of the system = 1 𝑞1𝑞2 4𝜋𝜀0 𝑟12 (b) Let the potentials, at two points, due to an external electric field (E) be 𝑉1 and V2 respectively. Now the total energy of the system is: 𝑞1𝑉1 + 𝑞2𝑉2 + 1 𝑞1𝑞2 4𝜋𝜀0 𝑟12 § 2019 55/5/1 All Sets Question 40 Why is the electrostatic potential inside a charged conducting shell constant throughout the volume of the conductor ? A Answer ¥ Set 1, 1 Marks E = 0 inside the conductor and has no tangential component on the surface. No work is done in moving charge inside or on the surface of the conductor. Therefore, Potential is constant. OR Because E = 0 inside the conductor OR No work is done in moving a charge inside the conductor Question 41 Two identical capacitors of 12 pF each are connected in series across a 50 V battery. Calculate the electrostatic energy stored in the combination. If these were connected in parallel across the same battery, find out the value of the energy stored in this combination. A Answer ¥ 2 Marks 𝐶 𝑠 = 6 𝑝𝐹 1 2 𝐸 𝑠 = 𝐶 𝑠𝑉 = 1 × 6 × 10 −12 × 50 × 50 2 2 −12 −9 = 7500 × 10 J = 7.5 × 10 J 𝐶 𝑝 = 24 𝑝𝐹 1 2 𝐸 𝑝 = 𝐶 𝑝𝑉 = 1 2 2 −8 = 3 × 10 J × 24 × 50 × 50 × 10 −12 Question 42 A charge Q is distributed over the surfaces of two concentric hollow spheres of radii r and R (R>>r), such that their surface charge densities are equal. Derive the expression for the potential at the common centre. A Answer ¥ 3 Marks 2 𝑄 = 𝑞1 + 𝑞2 = 4𝜋𝜎 𝑟 + 𝑅 2 Potential at common centre h i 𝑞1 𝑞2 1 𝑉= = + 4𝜋𝜀0 𝑟 𝑅 2 1 4𝜋𝑟 𝜎 4𝜋𝜀0 × 2 + 4𝜋𝑅 𝜎 𝑟 𝑅 (𝑟 + 𝑅)𝜎 1 𝑄(𝑟 + 𝑅) = = 2 2 𝜀0 4𝜋𝜀0 𝑟 + 𝑅 OR Three concentric metallic shells A, B and C of radii a, b and c ( a < b < c) have surface charge densities +𝜎, −𝜎 and +𝜎 respectively as shown. (a) Obtain the expressions for the potential of three shells A, B and C. (b) If shells A and C are at the same potential, obtain the relation between a, b and c. A Answer ¥ 3 Marks 𝑘𝑄 𝐴 𝑘𝑄 𝐵 𝑘𝑄𝐶 (a) 𝑉𝐴 = + + 𝑎 𝑏 𝑐 2 2 2 4𝜋𝑎 𝜎 4𝜋𝑏 𝜎 4𝜋𝑐 𝜎 1 − + 𝑉𝐴 = 4𝜋𝜀0 𝑎 𝑏 𝑐 𝜎 = [𝑎 − 𝑏 + 𝑐] 𝜀0 𝑘𝑄 𝐴 𝑘𝑄 𝐵 𝑘𝑄𝐶 𝑉𝐵 = + + 𝑏 𝑏 𝑐 2 2 2 4𝜋𝑎 𝜎 4𝜋𝑏 𝜎 4𝜋𝑐 𝜎 1 − + 𝑉𝐵 = 4𝜋𝜀0 𝑏 𝑏 𝑐 2 2 𝜎 𝑎 −𝑏 𝑉𝐵 = +𝑐 𝜀0 𝑏 𝑘𝑄 𝐴 𝑘𝑄 𝐵 𝑘𝑄𝐶 + + 𝑉𝐶 = 𝑐 𝑐 𝑐 2 2 2 1 4𝜋𝑎 𝜎 4𝜋𝑏 𝜎 4𝜋𝑐 𝜎 𝑉𝐶 = − + 4𝜋𝜀0 𝑐 𝑐 𝑐 2 2 2 𝜎 𝑎 −𝑏 +𝑐 𝑉𝐶 = 𝜀0 𝑐 (b) 𝑉𝐴 = 𝑉𝐶 2 2 𝑎 −𝑏 𝑎−𝑏+𝑐 = +𝑐 𝑐 𝑐 = 𝑎+𝑏 Question 43 Two identical capacitors of 10 pF each are connected in turn (i) in series, and (ii) in parallel across a 20 V battery. Calculate the potential difference across each capacitor in the first case and charge acquired by each capacitor in the second case. A Answer (i) V = 10 V ¥ Set 2, 2 Marks (ii) Q = CV = 200 pC Question 44 The figure shows a network of three capacitors C1 = 2 𝜇 F; C2 = 6 𝜇 F and C3 = 3 𝜇 F connected across a battery of 10 V. If a charge of 6 𝜇 C is acquired by the capacitor C3, calculate the charge acquired by C1. A Answer C23 = ( 6 + 3)𝜇 F = 9 𝜇 F 𝑞 𝑞 ⇒ V1 = C1 = 𝑉1 2 𝜇𝐹 𝑞 𝑞 C23 = ⇒ V2 = 𝑉2 9 𝜇𝐹 V = V1 + V2 1 1 + ⇒ 10 = 𝑞 2 𝜇𝐹 9 𝜇𝐹 10 × 18 ⇒𝑞= 𝜇 C = 16.4𝜇 C 11 ¥ Set 3, 2 Marks § 2019 55(B) Question 45 Define the term dielectric constant of a material. A Answer ¥ Set 1, 1 Marks The dielectric constant is the ratio of the capacitance of a capacitor filled with the given material (permittivity of the medium) to the capacitance of an identical capacitor in a vacuum without the dielectric material (permittivity of the vacuum). 𝜖 𝐶 𝜅= OR 𝜅 = 𝜖0 𝐶0 Question 46 A 600 pF capacitor is charged by a 100 V battery. (i) Calculate the electrostatic energy stored by the capacitor. (ii) If the capacitor is disconnected from the battery and connected to another 600 pF capacitor, calculate the electrostatic energy stored by the system. A Answer 1 2 ¥ 3 Marks 1 −12 U = CV = × 600 × 10 2 2 −6 U = 3 × 10 J × 100 × 100 When connected across another capacitor of capacitance 600pF, energy stored by the system 1 2 𝑞 ′ 𝑈 = 2 (𝐶1 + 𝐶2) 2 1 (𝐶1𝑉 ) = 2 (𝐶1 + 𝐶2) 2 −12 600 × 10 × 100 1 = × 2 ( 600 + 600) 10−12 ′ −6 𝑈 = 1.5 × 10 J. Å Click to YouTube icon to see the full question bank video Click the photo to see the full question bank video * Unit II Current Electricity www.cbse.page www.cuet.pw Chapter 3 Current Electricity Weightage for CBSE Board 2024 Unit I and II Combined Weightage is 16 Marks À Chapter 1 À Chapter 2 À Chapter 3 It’s not fixed which chapters will have more weightage, but overall weightage will be 16 Marks. It may vary too in your question paper. ` Syllabus Electric current, flow of electric charges in a metallic conductor, drift velocity, mobility and their relation with electric current; Ohm’s law, V−I characteristics (linear and non-linear), electrical energy and power, electrical resistivity and conductivity, temperature dependence of resistance, Internal resistance of a cell, potential difference and emf of a cell, combination of cells in series and in parallel, Kirchhoff’s rules, Wheatstone bridge. Deleted Topics Carbon resistors, colour code for carbon resistors; Metre bridge, Potentiometer - principle and its applications to measure potential difference and for comparing EMF of two cells; § 2024 SQP Question 1 An ammeter of resistance 0.81 ohm reads up to 1 A. The value of the required shunt to increase the range to 10 A is (a) 0.9 ohm (b) 0.09 ohm (c) 0.03 ohm (d) 0.3 ohm ¥ Set 1, 1 Marks A Answer 9 × S = 1 × 0.81 S= 0.81 9 = 0.09 ohm Question 2 A heating element using nichrome connected to a 230 V supply draws an initial current of 3.2 A which settles after a few seconds to a steady value of 2.8 A. What is the steady temperature of the heating element if the room temperature is 27 °C and the temperature coefficient of −4 −1 resistance of nichrome is 1.70 × 10 ℃ ? ¥ 2 Marks A Answer Given: 𝑉 = 230 V, I0 = 3.2 A, I = 2.8 A, ◦ −4◦ −1 𝑇0 = 27 C, 𝛼 = 1.70 × 10 C Using equation R = R0 ( 1 + 𝛼ΔT) V I = V I◦ [ 1 + 𝛼ΔT] and solving ΔT = 840, i.e. T = 840 + 27 = 867 C ◦ § 2023 55/C Compart Question 3 Assertion (A) : The temperature coefficient of resistance is positive for metals and negative for semi-conductors. Reason (R) : The charge carriers in metals are negatively charged whereas in semiconductors they are positively charged. (a) Both Assertion (A) and Reason (R) are true and Reason (R) is the correct explanation of the Assertion (A). (b) Both Assertion (A) and Reason (R) are true, but Reason (R) is not the correct explanation of the Assertion (A). (c) Assertion (A) is true, but Reason (R) is false. (d) Assertion (A) is false and Reason (R) is also false. A Answer ¥ Set 1, 1 Marks Assertion (A) is true, but Reason (R) is false. In intrinsic semiconductors, the free electrons (𝑛𝑒) and holes (𝑛ℎ) are the charge carriers. Question 4 (i) Derive the relation between the current and the drift velocity of free electrons in a conductor. Briefly explain the variation of resistance of a conductor with rise in temperature. (ii) An ammeter, together with an unknown resistance in series is connected across two identical batteries, each of emf 1.5 V, connected (i) in series, and (ii) in parallel. If the current recorded in the two cases be 1 1 A and A respectively, calculate the 2 3 internal resistance of each battery. A Answer ¥ 5 Marks (i) Total charge transported across the area A in time Δt is ΔQ = −𝑛𝑒Avd Δt ....(1) Also the amount of charge crossing area A in time Δt is ΔQ = IΔt ....(2) Comparing equation (1) and (2) ⇒ I = neAvd With increase in temperature, average speed of electrons increases resulting in more frequent collisions. 𝑚𝑙 As R = 2 𝑛𝑒 𝜏𝐴 Hence relaxation time 𝜏 decreases, resistance increases. 𝐸 (ii) I = 𝑅+𝑟 For series For parallel 1 = 3 2 𝑅 + 2𝑟 1 1.5 3 = 𝑅+ 𝑟 R + 2r = 6 2R + r = 9 2 After solving both equation 𝑟 = 1Ω § 2023 55/2/1 All Sets Question 5 A current of 0.8 A flows in a conductor of 40Ω for 1 minute. The heat produced in the conductor will be (a) 1445 J (b) 1536 J (c) 1569 J (d) 1640 J ¥ Set 1, 1 Marks A Answer From Ohm’s law, we know that 𝑉 = 𝐼𝑅 Given: 𝐼 = 0.8 A, R = 40Ω, t = 1 min ( 60sec) Now, 𝑉 = 𝐼𝑅 = 0.8 × 40 = 32 volt Power, 𝑃 = 𝑉 × 𝐼 = 32 × 0.8 = 25.6 watt Heat = 𝑃 × 𝑡 = 25.6 × 60 = 1536 J Question 6 A steady current of 8 mA flows through a wire. The number of electrons passing through a cross-section of the wire in 10 s is 16 (a) 4.0 × 10 17 (b) 5.0 × 10 16 (c) 1.6 × 10 17 (d) 1.0 × 10 ¥ Set 2, 1 Marks A Answer Given: I = 8 mA = 8 × 10 𝑡 = 10 s −3 A 𝑒 = 1.6 × 10 −19 We know that, 𝑄 = 𝑛𝑒 𝑄 = 𝐼𝑡 Equating both the above equations, we get 𝑛𝑒 = 𝐼𝑡 −19 −3 𝑛 × 1.6 × 10 = 8 × 10 × 10 −2 −2 80 10 8 × 10 17 = × = 5 × 10 𝑛= − 19 − 19 1.6 × 10 16 10 Theory Recap Graph for temperature dependence of resistivity for a typical semiconductor. Click the photo to see the full question bank video * Unit III Magnetic Effects of Current and Magnetism www.cuet.pw Chapter 4 Moving Charges and Magnetism Weightage for CBSE Board 2024 Unit III and IV Combined Weightage is 17 Marks À Chapter 4 À Chapter 5 À Chapter 6 À Chapter 7 It’s not fixed which chapters will have more weightage, but overall weightage will be 17 Marks. It may vary too in your question paper. § 2023 55/C Compart Question 7 An electron with velocity 𝑣® = 𝑣𝑥 𝑖ˆ + 𝑣 𝑦 𝑗ˆ moves through a magnetic field 𝐵® = 𝐵𝑥 𝑖ˆ − 𝐵 𝑦 𝑗ˆ . The force 𝐹® on the electron is (a) −𝑒 𝑣𝑥 𝐵 𝑦 − 𝑣 𝑦 𝐵𝑥 𝑘ˆ (c) −𝑒 𝑣𝑥 𝐵 𝑦 + 𝑣 𝑦 𝐵𝑥 𝑘ˆ (b) 𝑒 𝑣𝑥 𝐵 𝑦 − 𝑣 𝑦 𝐵𝑥 𝑘ˆ (d) 𝑒 𝑣𝑥 𝐵 𝑦 + 𝑣 𝑦 𝐵𝑥 𝑘ˆ ¥ Set 1, 1 Marks A Answer 𝑒 𝑣𝑥 𝐵 𝑦 + 𝑣 𝑦 𝐵𝑥 𝑘ˆ Lorentz Force F = 𝑞[ E ( r) + 𝑣 × B ( r)] ≡ Felectric + Fmagnetic § 2023 55(B) Question 8 An electron is revolving around a nucleus in a circular orbit of radius r with a constant speed 𝑣. The magnetic moment associated with the circulating current is evr evr (a) (b) 4 evr (c) 2 evr (d) 4 2 A Answer ¥ Set 1, 1 Marks evr (d) 2 Explanation Current flowing in the circular orbit: e 𝐼 = = ev 𝑇 where, 𝜈 is the frequency of revolution of electron v ∴ 𝐼 =e× 2𝜋 r 2 Area of the circular orbit: A = 𝜋r Magnetic moment of an electron : ev evr 2 𝜇 = IA = × 𝜋r = 2𝜋 r 2 § 2022 Term I Question 9 Two parallel conductors carrying current of 4.0 A and 10.0 A are placed 2.5 cm apart in vacuum. The force per unit length between them is −5 −2 (a) 6.4 × 10 N/m (b) 6.4 × 10 N/m −4 −4 (c) 4.6 × 10 N/m (d) 3.2 × 10 N/m A Answer ¥ Set 1, 1 Marks F 𝜇0𝑖1𝑖2 = 𝑙 2𝜋𝑟 −7 4𝜋 × 10 × 4 × 10 −4 = = 3 . 2 × 10 N / m 2𝜋 × 2.5 × 10−2 Theory Recap Formula for force between two parallel currents, 𝜇0𝐼 𝑎𝐼𝑏 𝐹𝑏𝑎 = 𝐼𝑏𝐿𝐵𝑎 = 𝐿 2𝜋𝑑 Formula for force per unit length F 𝜇0𝑖1𝑖2 = 𝑙 2𝜋𝑟 Parallel currents attract, and antiparallel currents repel. This rule is the opposite of what we find in electrostatics. Like (same sign) charges repel each other, but like (parallel) currents attract each other. Define the ampere (A), which is one of the seven SI base units. The ampere is the value of that steady current which, when maintained in each of the two very long, straight, parallel conductors of negligible cross-section, and placed one metre apart in vacuum, would produce on each of these −7 conductors a force equal to 2 × 10 newtons per metre of length. Question 10 Assertion (A) : When radius of a current carrying loop is doubled, its magnetic moment becomes four times. Reason (R) : The magnetic moment of a current carrying loop is directly proportional to the area of the loop. (a) Both Assertion (A) and Reason (R) are true and Reason (R) is the correct explanation of the Assertion (A). (b) Both Assertion (A) and Reason (R) are true, but Reason (R) is not the correct explanation of the Assertion (A). (c) Assertion (A) is true, but Reason (R) is false. (d) Assertion (A) is false and Reason (R) is also false. ¥ Set 1, 1 Marks A Answer Both Assertion (A) and Reason (R) are true and Reason (R) is the correct explanation of the Assertion (A). Theory Recap Relation between current and magnetic moment of a current carrying loop is 𝑀 = 𝐼 𝐴 𝐴 = 𝜋𝑅 2 𝑀∝𝑅 2 So, If the radius is doubled, the moment becomes four times. The assertion is true. Since 𝑀 = 𝐼 𝐴, ∴ 𝑀 ∝ 𝐴. The reason is true. Click the photo to see the full question bank video * Unit III Magnetic Effects of Current and Magnetism www.cbse.page www.cuet.pw Chapter 5 Magnetism and Matter Weightage for CBSE Board 2024 Unit III and IV Combined Weightage is 17 Marks À Chapter 4 À Chapter 5 À Chapter 6 À Chapter 7 It’s not fixed which chapters will have more weightage, but overall weightage will be 17 Marks. It may vary too in your question paper. ` Syllabus Bar magnet, bar magnet as an equivalent solenoid (qualitative treatment only), magnetic field intensity due to a magnetic dipole (bar magnet) along its axis and perpendicular to its axis (qualitative treatment only), torque on a magnetic dipole (bar magnet) in a uniform magnetic field (qualitative treatment only), magnetic field lines. Magnetic properties of materialsPara-, dia- and ferro - magnetic substances with examples, Magnetization of materials, effect of temperature on magnetic properties. § 2024 Additional Questions ¥ Released by CBSE on 6th September, 2023 Question 11 A rod when suspended in a uniform magnetic field aligns itself perpendicular to the magnetic field as shown below. Which of the following statements is/are true for the rod? (P) Every atom in the rod, has a zero magnetic moment. (Q) The rod is attracted when taken near the poles of a strong magnet. (R) The relative permeability of the material of the rod is slightly less than 1. (S) The susceptibility of the material of the rod is directly proportional to temperature. (a) only Q (c) only Q and S A Answer only P and R (b) only P and R (d) only R and S ¥ Set 1, 1 Marks Click the photo to see the full question bank video * Unit IV Electromagnetic Induction and Alternating Currents www.cuet.pw Chapter 6 Electromagnetic Induction Weightage for CBSE Board 2024 Unit III and IV Combined Weightage is 17 Marks À Chapter 4 À Chapter 5 À Chapter 6 À Chapter 7 It’s not fixed which chapters will have more weightage, but overall weightage will be 17 Marks. It may vary too in your question paper. ` Syllabus Electromagnetic induction; Faraday’s laws, induced EMF and current; Lenz’s Law, Self and mutual induction. § 2024 SQP Question 12 In a coil of resistance 100Ω a current is induced by changing the magnetic flux through it. The variation of current with time is as shown in the figure. The magnitude of change in flux through coil is (a) 200 Wb (b) 275 Wb (c) 225 Wb (d) 250 Wb A Answer ¥ Set 1, 1 Marks ΔΦ 𝐼Δ𝑡 = = Area under 𝐼 − 𝑡 graph, 𝑅 = 100 ohm 𝑅 ΔΦ 1 ΔΦ 𝑒= ,𝐼 = Δ𝑡 𝑅 Δ𝑡 ∴ 1 ΔΦ = 100 × × 10 × 0.5 = 250 Wb. 2 § 2023 55/C Compart Question 13 Answer the following, giving reasons : (a) Induced emf does not always produce induced current. (b) The motion of a copper plate is damped when it is allowed to oscillate between pole pieces of a strong magnet. (c) No power is consumed in an ac circuit containing a pure inductor. A Answer ¥ Set 3, 3 Marks (a) Even in the open loop emf can be induced but since circuit is open no current can flow. (b) When copper plate oscillates between poles of a strong magnet eddy currents are generated in the plate opposing the change in flux. (c) Power consumed by a pure inductor oscillates. For first half of the cycle it is positive and for the next half it is negative. So for a complete cycle it is zero. Click the photo to see the full question bank video * Unit IV Electromagnetic Induction and Alternating Currents www.cbse.page Chapter 7 Alternating Current Weightage for CBSE Board 2024 Unit III and IV Combined Weightage is 17 Marks À Chapter 4 À Chapter 5 À Chapter 6 À Chapter 7 It’s not fixed which chapters will have more weightage, but overall weightage will be 17 Marks. It may vary too in your question paper. ` Syllabus Alternating currents, peak and RMS value of alternating current/voltage; reactance and impedance; LCR series circuit (phasors only), resonance, power in AC circuits, power factor, wattless current. AC generator, Transformer. § 2023 55/4/1 All Sets Question 14 The figure shows variation of current (I) with time (𝑡 ) in four devices P, Q, R and S. The device in which an alternating current flows is : (a) P (b) Q A Answer (d) S (c) R (d) S ¥ Set 1, 1 Marks Theory Recap AC Current moves sinusoidally and has corresponding positive and negative values during each cycle. Click the photo to see the full question bank video * Unit V Electromagnetic waves www.cbse.page Chapter 8 Electromagnetic Waves Weightage for CBSE Board 2024 Unit V and VI Combined Weightage is 18 Marks À Chapters 2 Chapter 8 2 Chapter 9 2 Chapter 10 It’s not fixed which chapters will have more weightage, but overall weightage will be 18 Marks. It may vary too in your question paper. ` Syllabus Basic idea of displacement current, Electromagnetic waves, their characteristics, their transverse nature (qualitative idea only). Electromagnetic spectrum (radio waves, microwaves, infrared, visible, ultraviolet, X-rays, gamma rays) including elementary facts about their uses. § 2024 SQP Question 15 Identify the part of the electromagnetic spectrum which: (a) produces heating effect, (b) is absorbed by the ozone layer in the atmosphere, (c) is used for studying crystal structure. Write any one method of the production of each of the above radiations. A Answer ¥ 3 Marks (a) Infrared Infrared waves are produced by vibration of atoms and molecules hot bodies and molecules (b) Ultraviolet UV Rays is produced and released when inner shell electrons in atoms moving from one energy level to a lower level. (c) X rays One common way to generate X-rays is to bombard a metal target by high energy electrons. § 2023 55/C Compart Question 16 Which of the following physical quantities remain the same for X-ray, red light and radio waves when travelling through a medium ? (a) Wavelength (c) Frequency A Answer (b) Speed (d) Momentum ¥ Set 1, 1 Marks Speed Question 17 Which of the following radiations has the highest frequency ? (a) Visible light (b) Infrared rays (c) Microwaves (d) X-rays A Answer X-rays ¥ Set 2, 1 Marks Question 18 (a) The electric field of an electromagnetic wave passing through vacuum is represented as Ex = E0 sin (𝑘 z − 𝜔 t) . Identify the parameter which is related to the (i) wavelength, and (ii) the frequency of the wave in the above equation. (b) Write two properties of a medium that determine the velocity of light in that medium. ¥ 2 Marks 2𝜋 (i) Parameter relating wavelength is 𝑘 = 𝜆 Parameter relating frequency is 𝜔(= 2𝜋𝜈) A Answer (ii) Electric properties of the medium Magnetic properties of the medium Alternatively: −→ Permittivity (𝜀) of the medium −→ Permeability (𝜇) of the medium § 2023 55(B) Compart Question 19 Speed of electromagnetic waves in vacuum is 1 1 √ (a) √ (c) 𝜇0𝜀0 (d) (b) 𝜇0𝜀0 𝜇0𝜀0 𝜇0𝜀0 A Answer √ ¥ Set 1, 1 Marks 1 𝜇0𝜀0 Question 20 Identify the part of electromagnetic spectrum which is : (i) suitable for radar systems. (ii) sometimes referred to as heat waves. Write their wavelength range. A Answer ¥ Set 1, 2 Marks (i) Microwave Wavelength range (1mm − 0.1m) (ii) Infrared wave Wavelength range (700nm-1mm) OR Write two characteristics of electromagnetic waves. Name the radiation used to kill germs in water purifiers. Write the range of their frequency. A Answer ¥ 2 Marks Any two ▲ EMW travel with speed of light in vaccum. ▲ EMW carries energy and momentum. ▲ Speed of EMW in vaccum is given by 𝑐 = √ ▲ EMW are transverse in nature ▲ In EMW electric and magnetic field are 1 𝜇0𝜀0 perpendicular to each other and to the direct propagation. Ultraviolet(UV) 15 17 Frequency range 10 − 10 Hz § 2023 55/5/1 All Sets Question 21 Which one of the following electromagnetic radiation has the least wavelength? (a) Gamma rays (b) Microwaves (c) Visible light (d) X-rays A Answer ¥ Set 1, 1 Marks (a) Gamma rays Question 22 Identify the electromagnetic wave whose wavelengths range is from about −12 −8 (a) 10 m to about 10 m. −3 −1 (b) 10 m to about 10 m. Write one use of each. A Answer ¥ Set 1, 2 Marks (a) X-rays Used as diagnostic tool in medicine Treatment for certain forms of cancer To study crystal structure Alternatively Gamma rays Used in medicine to destroy the cancer cell. (b) Microwaves Used in radar system for aircraft navigation Question 23 Identify the electromagnetic radiation and write its wavelength range, which is used to kill germs in water purifier. Name the two sources of these radiations. A Answer ¥ Set 2, 2 Marks Ultraviolet rays. It covers wavelengths ranging −7 from about 4 × 10 m ( 400 nm) to −10 6 × 10 m ( 0.6 nm) . Sources : (1) The Sun (2) Any device in which inner shell electrons in atoms move from one energy level to a lower level. Question 24 Choose the correct option related to wavelengths (𝜆) of different parts of electromagnetic spectrum. (a) 𝜆 x-rays < 𝜆 micro waves < 𝜆 radio waves < 𝜆 visible (b) 𝜆 visible > 𝜆 x-rays > 𝜆 radio waves > 𝜆 micro waves (c) 𝜆 radio wave > 𝜆 micro waves > 𝜆 visible > 𝜆 x-rays (d) 𝜆 visible < 𝜆 micro waves < 𝜆 radio waves < 𝜆 x-rays A Answer ¥ Set 2, 1 Marks (c) 𝜆 radio wave > 𝜆 micro waves > 𝜆 visible > 𝜆 x-rays Question 25 How are electromagnetic waves produced? Write their two characteristics. A Answer ¥ Set 3, 2 Marks Electromagnetic waves can be produced by 1. Charged particle moving with varying speed. 2. Oscillating charge 3. By using LC circuit Characteristics of em waves (Any two) (1) Travel with speed of light in vacuum (2) Transverse in nature (3) No medium required for propagation (4) Can be polarized (5) Exert pressure Click the photo to see the full question bank video * Unit VIII Atoms and Nuclei www.cbse.page Chapter 12 Atoms Weightage for CBSE Board 2024 Unit VII and VIII Combined Weightage is 12 Marks À Chapters 2 Chapter 11 2 Chapter 12 2 Chapter 13 It’s not fixed which chapters will have more weightage, but overall weightage will be 12 Marks. It may vary too in your question paper. ` Syllabus Alpha-particle scattering experiment; Rutherford’s model of atom; Bohr model of hydrogen atom, th Expression for radius of 𝑛 possible orbit, velocity and energy of electron in nth orbit, hydrogen line spectra (qualitative treatment only). § 2023 55/1/1 All Sets Question 26 th The radius of the 𝑛 orbit in Bohr model of hydrogen atom is proportional to : 1 1 2 (b) (c) 𝑛 (d) 𝑛 (a) 2 𝑛 𝑛 ¥ Set 1, 1 Marks A Answer 2 𝑛 Theory Recap According to Bohr’s postulates 2 2 𝑛 ℎ 4𝜋𝜀0 𝑟𝑛 = 2 𝑚 2𝜋 𝑒 From the formula we can directly say 𝑟𝑛 ∝ 𝑛 2 2 ▶ Don’t get confused by 1/𝑛 th ▶ If the question was asked energy of the 𝑛 2 orbit then the answer would be 1/𝑛 because −18 2.18 × 10 13.6 𝐸𝑛 = − J = − 𝑒𝑉 2 2 𝑛 𝑛 ▶ The negative sign of the total energy of an electron moving in an orbit means that the electron is bound with the nucleus. Question 27 Hydrogen atom initially in the ground state, absorbs a photon which excites it to 𝑛 = 5 level. The wavelength of the photon is (a) 975 nm (b) 740 nm (c) 523 nm (d) 95 nm ¥ Set 1, 1 Marks A Answer The energy of ground state (𝑛 = 1) will be 𝐸1 = − 13.6 = −13.6eV 12 The energy of fifth energy level (𝑛 = 5) will be 𝐸5 = − 13.6 2 5 =− 13.6 eV 25 Thus, energy of a photon will be 𝐸 = 𝐸5 − 𝐸1 =− = 13.6 25 − − 13.6 × 24 25 13.6 1 = 13.6 × 24 × 1.6 × 10 25 −19 eV = 20.9 × 10 −19 J ℎ𝑐 Also the energy will be equal to 𝐸 = 𝜆 −34 8 6.6 × 10 × 3 × 10 −7 𝜆= = 0 . 95 × 10 m − 19 20.9 × 10 = 95 nm Question 28 The ground state energy of hydrogen atom is −13.6 eV. What is the potential energy and kinetic energy of an electron in the third excited state ? ¥ Set 1, 2 Marks A Answer −13.6 En = eV = Total energy 𝑛2 For third excited state n = 4 −13.6 −13.6 E4 = = = − 0 . 85eV 2 4 16 Potential Energy = 2 × Total Energy = 2 × 𝐸4 = 2 × (−0.85) eV = −1.70eV Kinetic energy = − (Total Energy) = −𝐸4 = 0.85 eV Question 29 Calculate the wavelength of the second line of Lyman series in a spectrum of hydrogen atom. 7 −1 (Take Rydberg constant, 𝑅 = 1.1 × 10 m ) A Answer ¥ Set 2, 2 Marks 1 " 1 1 # − 2 2 𝑛1 𝑛2 =𝑅 𝜆 For second line of Lyman series n1 = 1, n2 = 3 1 𝜆 = 1.1 × 10 7 7 1 1 1 32 1 − 2 = 1.1 × 10 1 − 7 = 1.1 × 10 × 𝜆= 9 8.8 × 10 −7 8 9 9 = 8.8 9 m = 1.023 × 10 −7 7 × 10 m −1 m = 1023Å Click the photo to see the full question bank video * Unit VIII Atoms and Nuclei www.cbse.page Chapter 13 Nuclei Weightage for CBSE Board 2024 Unit VII and VIII Combined Weightage is 12 Marks À Chapters 2 Chapter 11 2 Chapter 12 2 Chapter 13 It’s not fixed which chapters will have more weightage, but overall weightage will be 12 Marks. It may vary too in your question paper. ` Syllabus Composition and size of nucleus, nuclear force Mass-energy relation, mass defect; binding energy per nucleon and its variation with mass number; nuclear fission, nuclear fusion. Deleted Topics Radioactivity; Alpha, beta and gamma particles/rays and their properties; Radioactive decay law, half life and mean life. § 2023 55(B) Compart Question 30 A nucleus with A = 280 splits into two nuclei X1 and X2 whose mass numbers are in the ratio r1 27 : 8. Find the ratio of their radii, r2 ¥ 2 Marks A Answer 𝑅 = 𝑅0 𝐴 1/3 1 1 𝑅1 𝐴1 3 27 3 = = 𝑅2 𝐴2 8 𝑅1 3 = 𝑅2 2 Question 31 (a) Obtain the relationship between atomic mass unit (u) and electron volt (eV). (b) The mass of a ball is 0.5 kg. It is totally converted into energy. Calculate the energy output in eV A Answer ¥ 3 Marks (a) 𝐸 = Δ𝑚𝑐 2 −27 Δ𝑚 = 1.66 × 10 kg −27 8 2 1.66 × 10 × 3 × 10 6 𝐸= eV = 931 . 5 × 10 eV 1.6 × 10−19 2 (b) 𝐸 = 𝑚𝑐 𝑚 = 0.5 kg 8 2 𝐸 = ( 0.5) × 3 × 10 J 16 𝐸 = 4.5 × 10 J 𝐸= 4.5 × 10 16 23 eV = 2 . 8 × 10 − 19 1.6 × 10 eV § 2022 Term II 55/6 (C) Question 32 Determine from the given data, whether the following reaction is exothermic or endothermic 1 1H + 3 1H −→ 2 1H 2 1H + Atomic masses 2 𝑚 1H = 2.014102u 3 𝑚 1H = 3.016049u 1 𝑚 1H = 1.007825u What is the ratio of the nuclear density of the 197 107 gold isotope 79 Au and the silver isotope 47 Ag. A Answer ¥ Set 1, 3 Marks Mass of reactants = ( 1.007825 + 3.016049)𝑢 = 4.023874𝑢 Mass of products = ( 2 × 2.014102)𝑢 = 4.028204𝑢 Mass of reactants < Mass of products Hence, reaction is Endothermic Ratio of the nuclear density of the gold isotope 197 107 Au and the silver isotope Ag is 1 : 1 47 79 Question 33 Determine from the given data, whether the following reaction is exothermic or endothermic 12 6 C + 12 6 C −→ 20 10Ne + 4 2He Atomic masses m m m 4 He 2 12 C 6 20 Ne 10 = 4.002603u = 12.000000u = 19.992439u What is the ratio of the nuclear density of the 30 14 phosphorus 15P and nitrogen 7 N ? A Answer ¥ Set 2, 3 Marks Mass of the products = 19.992439 + 4.002603 = 23.995042𝑢 Mass of the reactant = ( 2 × 12.000000)𝑢 = 24.00000𝑢 As the mass of the reactants is more than the mass of the products, the reaction is exothermic. Ratio of the nuclear density of the phosphorus 30 14 P and nitrogen N is 1 : 1 7 15 Question 34 Determine from the given data, whether the following reaction is exothermic or endothermic 226 88 Ra −→ 222 86 Rn + 4 2He Atomic masses : 226 m 88 Ra = 226.02540u 222 m 86 Rn = 222.01750u 4 m 2He = 4.002603u What is the ratio of the nuclear density of 14 and 7 N ? 4 He 2 ¥ Set 3, 3 Marks A Answer Mass of reactant = 226.02540 u Mass of the products = ( 222.01750 + 4.002603) u = ( 226.020103) u Mass of reactants > Mass of products Hence the reaction is exothermic Ratio of the nuclear density of 4 He 2 and 14 N 7 is 1 : 1 Click the photo to see the full question bank video Å Click to YouTube icon to see the full question bank video * Unit IX Electronics Devices Published by : www.cbse.page www.cuet.pw Chapter 14 Semiconductor Electronics: Materials, Devices and Simple Circuits Weightage for CBSE Board 2024 Unit IX Electronic Devices Chapter 14 : § 7 Marks ` Syllabus Energy bands in conductors, semiconductors and insulators (qualitative ideas only). Intrinsic and extrinsic semiconductors p and n type, p-n junction. Semiconductor diode, I-V characteristics in forward and reverse bias, application of junction diode, diode as a rectifier. Removed Topics from 2024 Syllabus Special purpose p-n junction diodes: LED, photodiode, Solar cell and Zener diode and their characteristics; Zener diode as a voltage regulator. Digital Electronics and Logic gates § 2024 SQP Question 1 Assertion (A) : Putting 𝑝 − type semiconductor slab directly in physical contact with 𝑛 − type semiconductor slab cannot form the 𝑝 − 𝑛 junction. Reason (R) : The roughness at contact will be much more than inter atomic crystal spacing and continuous flow of charge carriers is not possible. (a) Both Assertion (A) and Reason (R) are true and Reason (R) is the correct explanation of the Assertion (A). (b) Both Assertion (A) and Reason (R) are true, but Reason (R) is not the correct explanation of the Assertion (A). (c) Assertion (A) is true, but Reason (R) is false. (d) Assertion (A) is false and Reason (R) is also false. A Answer ¥ Set 1, 1 Marks Both Assertion (A) and Reason (R) are true and Reason (R) is the correct explanation of the Assertion (A). Question 2 (a) Name the device which utilizes unilateral action of a pn diode to convert ac into dc. (b) Draw the circuit diagram of full wave rectifier. A Answer ¥ 2 Marks (a) Rectifier (b) Circuit diagram of full wave rectifier Question 3 Read the following paragraph and answer the questions that follow. A semiconductor diode is basically a pn junction with metallic contacts provided at the ends for the application of an external voltage. It is a two terminal device. When an external voltage is applied across a semiconductor diode such that p-side is connected to the positive terminal of the battery and n-side to the negative terminal, it is said to be forward biased. When an external voltage is applied across the diode such that n-side is positive and p-side is negative, it is said to be reverse biased. An ideal diode is one whose resistance in forward biasing is zero and the resistance is infinite in reverse biasing. When the diode is forward biased, it is found that beyond forward voltage called knee voltage, the conductivity is very high. When the biasing voltage is more than the knee voltage the potential barrier is overcome and the current increases rapidly with increase in forward voltage. When the diode is reverse biased, the reverse bias voltage produces a very small current about a few microamperes which almost remains constant with bias. This small current is reverse saturation current. (i) In the given figure, a diode D is connected to an external resistance R = 100Ω and an emf of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the circuit will be (a) 40 mA (c) 35 mA (b) 20 mA (d) 30 mA A Answer ¥ 1 Mark Net potential across the resistor is difference of the emf and the barrier potential ∴ iR = 𝜀 − Vbarrier = 3.5 − 0.5 = 3 ⇒i= 3 100 A = 30 × 10 −3 A = 30 mA (ii) In which of the following figures, the 𝑝 − 𝑛 diode is reverse biased? (a) (b) (c) (d) A Answer ¥ 1 Mark Correct Option is (c) (iii) Based on the V-I characteristics of the diode, we can classify diode as (a) bilateral device (b) ohmic device (c) non-ohmic device (d) passive element A Answer Correct Option is (c) ¥ 1 Mark OR Two identical PN junctions can be connected in series by three different methods as shown in the figure. If the potential difference in the junctions is the same, then the correct connections will be (a) in the circuits (1) and (2) (b) in the circuits (2) and (3) (c) in the circuits (1) and (3) (d) only in the circuit (1) A Answer ¥ 1 Mark Correct Option is (b) (iv) The V-I characteristic of a diode is shown in the figure. The ratio of the resistance of the diode at 𝐼 = 15𝑚𝐴 to the resistance at 𝑉 = −10𝑉 is 6 (a) 100 (b) 10 −6 (c) 10 (d) 10 A Answer ¥ 1 Mark Considering the diode characteristics as a straight line between 𝐼 = 10 mA to 𝐼 = 20 mA passing through the origin, we can calculate the resistance using Ohm’s law. From the curve, at 𝐼 = 20 mA, 𝑉 = 0.8 V; 𝐼 = 10 mA, 𝑉 = 0.7 V; Resistance under forward bias: Δ𝑉 ( 0 . 8 − 0 . 7) V 𝑟𝑓 𝑏 = = = 10Ω Δ𝐼 ( 20 − 10) mA From the curve at V = −10 V, 𝐼 = −1 𝜇 A, Resistance under reverse bias 10 V 7 = 10 Ω 𝑟𝑟𝑏 = 1 𝜇A 𝑟 𝑓 𝑏 10 −6 ⇒𝑟= = 7 = 10 Ω 𝑟𝑟𝑏 10 § 2023 55(B) Compart Question 4 Which of the following dopants in silicon will make it a p-type semiconductor ? (a) As (b) Al A Answer (c) Sb (d) P ¥ Set 1, 1 Marks Aluminium (Al) is the correct option. 𝑝−type is obtained when Si or Ge is doped with a trivalent impurity like Al, B, In, etc. The dopant has one valence electron less than Si or Ge. Question 5 When a 𝑝 − 𝑛 junction diode is forward biased : (a) the depletion layer width increases and the barrier height is reduced. (b) the depletion layer width decreases and the barrier height is reduced. (c) both the depletion layer width and the barrier height increase. (d) the depletion layer width decreases and the barrier height increases. A Answer ¥ Set 1, 1 Marks The depletion layer width decreases and barrier height is reduced. Question 6 Briefly explain how the valence band and conduction band are formed in a crystal. A Answer ¥ 2 Marks In a crystal, the atoms are close to each other and therefore the electrons interact with each other and also with neighboring atomic cores. This interaction of electrons causes the formation of energy bands. The energy band which includes the energy level of electrons is called valence band. The energy band above the valence band is called conduction band. Question 7 Explain how a depletion region is formed in a 𝑝 − 𝑛 junction. A Answer ¥ 2 Marks When a hole diffuses from 𝑝 → 𝑛 due to the concentration gradient, it leaves behind an ionized acceptor (negative charge) which is immobile. As the holes continue to diffuse,a layer of negative charge(or negative space charge region) on the p-side of the junction is developed. The space charge region on either side of the junction together is known as depletion region. § 2023 55/C Compart Question 8 In which of the following diagrams is the capacitor C connected correctly to provide smooth output of a half-wave rectifier? (a) (b) (c) (d) A Answer ¥ Set 1, 1 Marks Diagram C is correct Question 9 Assertion (A) : Silicon is preferred over germanium for making semiconductor devices. Reason (R) : The energy gap for germanium is more than the energy gap for silicon. (a) Both Assertion (A) and Reason (R) are true and Reason (R) is the correct explanation of the Assertion (A). (b) Both Assertion (A) and Reason (R) are true, but Reason (R) is not the correct explanation of the Assertion (A). (c) Assertion (A) is true, but Reason (R) is false. (d) Assertion (A) is false and Reason (R) is also false. A Answer ¥ Set 1, 1 Marks Assertion (A) is true, but Reason (R) is false Theory Recap Energy required to jump the forbidden band (about 0.72 eV for germanium and about 1.1 eV for silicon) at room temperature in the intrinsic semiconductor. Question 10 (i) Draw the circuit diagram used to study I−V characteristics of a 𝑝 − 𝑛 junction diode in conducting mode. Mark on the graph the threshold voltage of the diode. Explain the significance of this voltage. (ii) In the circuit shown in the figure, the forward voltage drop across the diode is 0.3 V. Find the voltage difference between A and B. A Answer ¥ 5 Marks (i) Beyond threshold voltage in forward bias diode current increases significantly even for very small increases in diode bias voltage. (ii) Let potential across A and B is 𝑉 , so by Kirchhoff’s loop law, −3 𝑉𝐴𝐵 = 0.2 × 10 × ( 5000 + 5000) + 0.3 −3 3 = 0.2 × 10 × 10 × 10 + 0.3 𝑉𝐴𝐵 = 2 + 0.3 = 2.3 V OR (i) Briefly describe the classification of solids into metals, insulators and semi-conductors on the basis of energy level diagrams. (ii) In a silicon diode, the current increases from 10 mA to 20 mA when the voltage changes from 0.6 V to 0.7 V. Calculate the dynamic resistance of the diode. A Answer (i) Energy bands of metals, ¥ 5 Marks Energy bands of insulators, Energy bands of semiconductors, ▶ For E𝑔 > 3eV material is insulator ▶ For E𝑔 < 3eV material is semiconductor ▶ For E𝑔 = 0 or overlapping of conduction and valence band material is conductor. Δ𝑉 0.7 − 0.6 = = 10 Ω (ii) 𝑟𝑑 = − 3 Δ𝐼 ( 20 − 10) × 10 Theory Recap Dynamic Resistance Dynamic Resistance is the the ratio of small change in voltage Δ𝑉 to a small change in current Δ𝐼 in diodes. Δ𝑉 𝑟𝑑 = Δ𝐼 § 2023 55/1/1 All Sets Question 11 An ac source of voltage is connected in series with a p-n junction diode and a load resistor. The correct option for output voltage across load resistance will be : (a) (b) (c) (d) A Answer ¥ Set 1, 1 Marks Theory Recap Half-Wave Rectifier If an alternating voltage is applied across a diode which is forward biased in series with a load, a pulsating voltage will appear across the load only during the half cycles of the ac input during. Such rectifier circuit is called a half-wave rectifier. ▲ When the voltage at A is positive, the diode is forward biased and it conducts. ▲ When A is negative, the diode is reverse-biased and it does not conduct. The reverse saturation current of a diode is negligible and can be considered equal to zero for practical purposes. ▲ The reverse breakdown voltage of the diode must be sufficiently higher than the peak ac voltage at the secondary of the transformer to protect the diode from reverse breakdown. Full Wave Rectifier The circuit using two diodes, gives output rectified voltage corresponding to both the positive as well as negative half of the ac cycle is known as full-wave rectifier. Here the p-side of the two diodes are connected to the ends of the secondary of the transformer. The n-side of the diodes are connected together and the output is taken between this common point of diodes and the midpoint of the secondary of the transformer. So for a full-wave rectifier the secondary of the transformer is provided with a centre tapping and so it is called centre-tap transformer. Question 12 When an intrinsic semiconductor is doped with a small amount of trivalent impurity, then : (a) its resistance increases. (b) it becomes a p-type semiconductor. (c) there will be more free electrons than holes in the semiconductor. (d) dopant atoms become donor atoms. A Answer ¥ Set 1, 1 Marks (b) it becomes a p-type semiconductor Question 13 In the energy-band diagram of n-type Si, the gap between the bottom of the conduction band EC and the donor energy level ED is of the order of (a) 10eV (b) 1eV (c) 0.1eV (d) 0.01eV A Answer ¥ Set 1, 1 Marks (d) 0.01 eV is correct option. ▲ This question was directly asked from diagram. j Students be aware because, CBSE Examination Department is increasing their level of asking questions, so that students can also be ready for CUET UG Exam. Question 14 Differentiate between intrinsic and extrinsic semiconductors. A Answer ¥ 2 Marks Intrinsic semiconductor ▲ This type of semiconductors are in pure form. ▲ Low conductivity at room temperature. ▲ Intrinsic charge carriers are electrons and holes with equal concentration [𝑛𝑒 = 𝑛ℎ] Extrinsic semiconductor ▲ These type of semiconductors are doped with trivalent or pentavalent impurity atoms. ▲ High conductivity at room temperature. ▲ The two concentrations are unequal in it. There is excess of electrons in n-type and excess of holes in p-type semiconductors [ 𝑛𝑒 ≠ 𝑛ℎ] j This Question was repeated in CBSE 2022 Term II 55/1/1, 2015 and 2017 OR Draw the circuit arrangement for studying the V−I characteristics of a 𝑝 − 𝑛 junction diode in forward bias and reverse bias. Show the plot of V−I characteristic of a silicon diode. A Answer ¥ 2 Marks Forward bias Reverse bias Plot of V−I characteristic of a silicon diode Question 15 Briefly explain how the diffusion and drift currents contribute to the formation of potential barrier in a 𝑝 − 𝑛 junction diode. A Answer ¥ 2 Marks The diffusion current due to concentration gradient at the junction forms a space charge region consisting of immobile charge carriers. Due to this an electric field is generated at the junction giving rise to drift current in a direction opposite to diffusion current. The potential at which diffusion current becomes equal to drift current is called potential barrier. § 2023 55/2/1 All Sets Question 16 The formation of depletion region in a p − n junction diode is due to (a) movement of dopant atoms (b) diffusion of both electrons and holes (c) drift of electrons only (d) drift of holes only A Answer ¥ Set 1, 1 Marks Diffusion of both electrons and holes. Question 17 Which one of the following elements will require the highest energy to take out an electron from them? Pb (a) Ge Ge (b) C A Answer Carbon (C) (c) Si C Si (d) Pb ¥ Set 2, 1 Marks Theory Recap Number of free electrons for conduction in Pb, Ge and Si are significant but negligibly small for C. So carbon require the highest energy to take out an electron. Ionisation energy of Carbon(C) is more in comparison to Ge, Si and Pb. Question 18 A semiconductor device is connected in series with a battery, an ammeter and a resisitor. A current flows in the circuit. If the polarity of the battery is reversed, the current in the circuit almost becomes zero. The device is a/an (a) intrinsic semiconductor (b) 𝑝−type semiconductor (c) 𝑛−type semiconductor (d) 𝑝 − 𝑛 junction diode A Answer ¥ Set 3, 1 Marks (d) 𝑝 − 𝑛 junction diode Question 19 In an extrinsic semiconductor, the number 20 −3 density of holes is 4 × 10 m . If the number 15 −3 density of intrinsic carriers is 1.2 × 10 m , the number density of electrons in it is 9 −3 (a) 1.8 × 10 m (b) 2.4 × 10 10 m 9 −3 −3 (c) 3.6 × 10 m (d) 3.2 × 10 10 m −3 A Answer ¥ Set 1, 1 Marks 2 𝑛𝑖 Number of density of electrons = 𝑛ℎ Where, 𝑛𝑖 is density of intrinsic carrier, 𝑛ℎ is the density of holes. 15 𝑛𝑖 = 1.2 × 10 m 20 −3 −3 𝑛ℎ = 4 × 10 m 2 𝑛𝑖 𝑛𝑒 = 𝑛ℎ 𝑛𝑒 = 1.2 × 10 15 2 20 10 4× 9 −3 𝑛𝑒 = 3.6 × 10 m Question 20 With the help of a circuit diagram, explain how a full wave rectifier gives output rectified voltage corresponding to both halves of the input ac voltage. A Answer ¥ Set 3, 2 Marks Suppose the input voltage to A with respect to the centre tap at any instant is positive and B being out of phase will be negative so , diode D1, gets forward biased and conducts while D2 being reverse biased is not conducting. For the next half cycle of input voltage, the polarities are reversed and the diode D2 conducts being forward biased. Question 21 Draw energy band diagram for an n-type and p-type semiconductor at T > 0 K. A Answer n-type ¥ 2 Marks p-type Question 22 Answer the following giving reasons : (i) A 𝑝 − 𝑛 junction diode is damaged by a strong current. (ii) Impurities are added in intrinsic semiconductors. A Answer ¥ 2 Marks (i) Due to strong current, a junction diode gets heated, consequently large number of covalent bonds are broken and the junction is damaged. (ii) Deliberate addition of impurity atoms in intrinsic semiconductor increases its conductivity and is suitable for making electronic devices. OR No electronic device can be developed using intrinsic semiconductor because of their low conductivity. § 2023 55/3/1 All Sets Question 23 At a certain temperature in an intrinsic semiconductor, the electrons and holes 16 −3 concentration is 1.5 × 10 m . When it is doped with a trivalent dopant, hole concentration 22 −3 increases to 4.5 × 10 m . In the doped semiconductor, the concentration of electrons ( ne) will be : 6 −3 7 −3 (a) 3 × 10 m (b) 5 × 10 m 9 −3 38 −3 (c) 5 × 10 m (d) 6.75 × 10 m A Answer 9 (c) 5 × 10 m ¥ Set 1, 1 Marks −3 is the correct option Question 24 If a 𝑝 − 𝑛 junction diode is reverse biased, (a) the potential barrier is lowered. (b) the potential barrier remains unaffected. (c) the potential barrier is raised. (d) the current is mainly due to majority carriers. A Answer the potential barrier is raised ¥ Set 1, 1 Marks Question 25 At 0 K, the resistivity of an intrinsic semiconductor is : (a) same as that at 0°C (b) same as that at 300 K (c) zero (d) infinite A Answer ¥ Set 2, 1 Marks infinite Question 26 For the forward biasing of a 𝑝 − 𝑛 junction diode, which of the following statements is not correct? (a) The potential barrier decreases. (b) Minority carrier injection occurs. (c) Width of depletion layer increases. (d) Forward current is due to the diffusion of both holes and electrons. A Answer ¥ Set 3, 1 Marks Width of depletion layer increases Question 27 Explain the roles of diffusion current and drift current in the formation of the depletion layer in a p-n junction diode. A Answer ¥ 2 Marks During the formation of p−n junction ,and due to the concentration gradient across p-,and n-sides, holes diffuse from p-side to n-side (p→n) and electrons diffuse from n-side to p-side(n→p). When an electron diffuses from (n → p), it leaves behind an ionized donor(positive charge) on n-side which is immobile. Similarly, when a hole diffuses from (p→n) due to the concentration gradient, it leaves behind an ionised acceptor (negative charge) which is immobile. This space–charge region on either side of the junction together is known as depletion region. As a result, an electric field is developed across the junction. Due to this field, an electron on p-side of the junction moves to n-side and a hole on n-side of the junction moves to p-side. The motion of charge carriers due to the electric field is called drift. Initially, diffusion current is large and drift current is small. As the diffusion process continues, the electric field strength and hence drift current increases. This process continues till diffusion and drift current becomes equal. Question 28 Explain the property of a 𝑝 − 𝑛 junction which makes it suitable for rectifying alternating voltages. Differentiate between a half-wave and a full-wave rectifier. A Answer ¥ 2 Marks p−n junction is a uni-directional device which conducts in forward bias. The half-wave rectifier gives output only for half of the input cycle. In half-wave rectifier only 1 diode is used. The full-wave rectifier gives output for both the halves of the input cycles. In full-wave rectifier 2 diodes and a centre tap transformer is used . Question 29 How is the width of depletion layer of a 𝑝 − 𝑛 junction diode affected when it is (i) forward biased, (ii) reverse biased Justify your answers. A Answer ¥ Set 2, 1 Marks (i) In Forward Bias −→ Decreases The direction of the applied voltage (V) is opposite to the built-in potential (V0) (ii) In Reverse Bias −→ Increases The direction of the applied voltage (V) is same as the built-in potential (V0) Question 30 Draw a circuit diagram of a p-n junction diode in (a) forward biasing, and (b) reverse biasing. Draw the V I characteristics for each case. A Answer ¥ Set 3, 1 Marks This question was repeated by CBSE in question paper 2023 55/1 § 2023 55/4/1 All Sets Question 31 The threshold voltage for a p-n junction diode used in the circuit is 0·7 V. The type of biasing and current in the circuit are (a) Forward biasing, 0 A (b) Reverse biasing, 0 A (c) Forward biasing, 5 mA (d) Reverse biasing, 2 mA A Answer ¥ Set 1, 1 Marks (a) Forward biasing, 0 A is correct option. Question 32 Assertion (A) : In n type semiconductor, number density of electrons is greater than the number density of holes but the crystal maintains an overall charge neutrality. Reason (R) : The charge of electrons donated by donor atoms is just equal and opposite to that of the ionised donor. (a) Both Assertion (A) and Reason (R) are true and Reason (R) is the correct explanation of the Assertion (A). (b) Both Assertion (A) and Reason (R) are true, but Reason (R) is not the correct explanation of the Assertion (A). (c) Assertion (A) is true, but Reason (R) is false. (d) Assertion (A) is false and Reason (R) is also false. A Answer ¥ Set 1, 1 Marks Both Assertion (A) and Reason (R) are true, and Reason (R) is the correct explanation of the Assertion (A). Question 33 (i) A germanium crystal is doped with antimony. With the help of energy-band diagram, explain how the conductivity of the doped crystal is affected. (ii) Briefly explain the two processes involved in the formation of a p-n junction. (iii) What will the effect of (1) forward biasing, and (2) reverse biasing be on the width of depletion layer in a p-n junction diode ? A Answer ¥ 5 Marks (i) With proper level of doping, the number of conduction electrons can be made much larger than the number of holes. Due to this conductivity of the doped crystal increases. (ii) Two processes (a) Diffusion (b) drift Diffusion: Due to concentration gradient majority charge carrier that is electron moves from n → p side and holes to p → n side. This movement of charges is called diffusion. Drift: Due to the junction field, an electron on p-side of the junction moves to n − side and a hole on n−side of the junction moves to p−side. The motion of the charge carrier due to electric field is called drift. (iii) (1) decreases (2) increases OR (i) With the help of a circuit diagram, briefly explain the working of a full-wave rectifier using p-n junction diodes. (ii) Draw V I characteristics of a p-n junction diode. Explain how these characteristics make a diode suitable for rectification. (iii) Carbon and silicon have the same lattice structure. Then why is carbon an insulator but silicon a semiconductor ? A Answer ¥ 5 Marks (i) Working: Suppose the input voltage to A with respect to the centre tap at any instant is positive. At that instant voltage at B, being out of phase will be negative. So diode D1 gets forward biased and conducts, while D2 being reverse biased does not conduct. Similarly during second half of the cycle polarity get reversed so only D2 will conduct. (ii) V−I characteristics This diagram shows that the diode conducts when forward biased and does not conduct when reverse biased. This characteristics makes it suitable for use for rectification. (iii) The 4 bonding of electrons of C and Si lie respectively, in the second and third orbit. Hence energy required to take out an electron from their atoms will be much less than that − for C. Hence number of free electrons (𝑒 ) for conduction in Si significant but negligibly small for C. § 2023 55/5/1 All Sets Question 34 During the formation of a p − n junction (a) diffusion current keeps increasing. (b) drift current remains constant. (c) both the diffusion current and drift current remain constant. (d) diffusion current remains almost constant but drift current increases till both currents become equal. A Answer ¥ Set 1, 1 Marks Diffusion current remains almost constant but drift current increases till both currents become equal. Theory Recap Initially, diffusion current is large and drift current is small. As the diffusion process continues, the space-charge regions on either side of the junction extend, thus increasing the electric field strength and hence drift current. This process continues until the diffusion current equals the drift current. Thus a p − n junction is formed. In a p − n junction under equilibrium there is no net current. Question 35 The energy required by an electron to jump the forbidden band in silicon at room temperature is about (a) 0.01eV (b) 0.05eV A Answer (c) 0.7eV (d) 1.1eV ¥ Set 3, 1 Marks Energy required to jump the forbidden band is about 1.1 eV for silicon. Theory Recap The energy required to jump the forbidden band is about 0.72 eV for germanium and about 1.1 eV for silicon at room temperature in the intrinsic semiconductor. Question 36 Assertion (A) : The resistance of an intrinsic semiconductor decreases with increase in its temperature. Reason (R) : The number of conduction electrons as well as hole increase in an intrinsic semiconductor with rise in its temperature. (a) Both Assertion (A) and Reason (R) are true and Reason (R) is the correct explanation of the Assertion (A). (b) Both Assertion (A) and Reason (R) are true, but Reason (R) is not the correct explanation of the Assertion (A). (c) Assertion (A) is true, but Reason (R) is false. (d) Assertion (A) is false and Reason (R) is also false. A Answer ¥ Set 1, 1 Marks Both Assertion (A) and Reason (R) are true and Reason (R) is the correct explanation of the Assertion (A). Theory Recap At higher temperatures (T > 0K), which excites some electrons from the valence band to the conduction band. These thermally excited electrons at T > 0 K, partially occupy the conduction band. These have come from the valence band leaving equal number of holes there. Question 37 Draw the circuit arrangement for studying V-I characteristics of a p − n junction diode in (i) forward biasing (ii) reverse biasing Draw the typical V−I characteristics of a silicon diode. Describe briefly the following terms (i) minority carrier injection in forward biasing (ii) breakdown voltage in reverse biasing. A Answer ¥ 5 Marks Minority carrier injection : Under forward bias electrons from n-side cross the depletion region and reach p−side. Similarly, holes from p−side cross the junction and reach the n-side. Breakdown voltage : It is the voltage under reverse bias for which reverse current increases sharply. OR Name two important processes involved in the formation of a p − n junction diode. With the help of a circuit diagram, explain the working of junction diode as a full wave rectifier. Draw its input and output waveforms. State the characteristic property of a junction diode that makes it suitable for rectification. A Answer ¥ 5 Marks Suppose the input voltage to A with respect to the centre-tap at any instant is positive. At that instant, voltage at B being out of phase will be negative. So, diode 𝐷1 gets forward biased and conducts (while 𝐷2 being reverse biased is not conducting). Hence, during this positive half cycle we get an output current (and a output voltage across the load resistor 𝑅 𝐿). In the course of ac cycle when the voltage at A becomes negative with respect to centre tap, the voltage at B would be positive. In this part of the cycle diode 𝐷1 would not conduct but diode 𝐷2 would, giving an output current and output voltage (across 𝑅 𝐿) during the negative half cycle of the input ac. Characteristic Property :Junction diode allows current to pass only when it is forward biased. § 2023 55(B) Question 38 Which of the following is not a semiconductor ? (a) Ge (b) Si (c) Sn A Answer (d) CdS ¥ Set 1, 1 Marks (c) Sn Question 39 In an intrinsic semiconductor, the intrinsic carrier concentration ( n𝑖 ) , electron concentration ( n𝑒) and hole concentration ( nh) are related as : (a) ne + nh = ni (b) ni = √ nenh (c) ne = nh = ni ni (d) ne + nh = 2 A Answer ¥ Set 1, 1 Marks ne = nh = ni In intrinsic semiconductors, the number of free electrons, n𝑒 is equal to the number of holes, nℎ. Question 40 Assertion (A) : Silicon is preferred over Germanium for making semiconductor devices. Reason (R) : Silicon can be used at a higher temperature as compared to Germanium. (a) Both Assertion (A) and Reason (R) are true and Reason (R) is the correct explanation of the Assertion (A). (b) Both Assertion (A) and Reason (R) are true, but Reason (R) is not the correct explanation of the Assertion (A). (c) Assertion (A) is true, but Reason (R) is false. (d) Assertion (A) is false and Reason (R) is also false. A Answer ¥ Set 1, 1 Marks Both Assertion (A) and Reason (R) are true and Reason (R) is the correct explanation of the Assertion (A). Question 41 Define the following terms in relation to the working of a 𝑝 − 𝑛 junction diode : (i) Knee voltage (ii) Reverse saturation current A Answer ¥ 2 Marks (i) In forward bias of a 𝑝 − 𝑛 junction diode the external applied voltage beyond which the current begins to flow rapidly is called Knee Voltage. (ii) In reverse bias of a 𝑝 − 𝑛 junction diode the current is due to minority carriers which is not very much dependent on the applied voltage. This current is called reverse saturation current. Question 42 How are the potential barrier and width of the depletion region affected when a 𝑝 − 𝑛 junction diode is (i) forward-biased (ii) reverse-biased A Answer ¥ 2 Marks (i) In forward bias ▶ Potential barrier decreases ▶ Width of depletion layer decreases (ii) In reverse bias ▶ Potential barrier increases ▶ Width of depletion layer increases OR Briefly explain doping of a semiconductor and its necessity. A Answer ¥ 2 Marks Doping is the process of adding impurity atom in an intrinsic semiconductor deliberately. An intrinsic semiconductor has low conductivity. By doping, conductivity of semiconductor is increased. § 2022 Term II 55/B Question 43 How is the forward biasing different from the reverse biasing in a 𝑝 − 𝑛 junction diode ? Name one device each which works under forward and reverse biasing. A Answer ¥ 2 Marks In forward biasing the p-side of the junction is connected to the +ve terminal and n-side to the –ve terminal of the battery. In reverse biasing the p-side of the junction is connected to the –ve terminal and n-side to the +ve terminal of the battery. Alternatively In forward biasing the width of the depletion layer decreases / resistance of the junction decreases / current increases. In reverse biasing the width of the depletion layer increases / resistance of the junction increases / current decreases. A device for forward biasing → LED A device for reverse biasing → Zener diode LED, Zener diode is not in your 2024 syllabus. Question 44 How are (a) n-type semiconductor, and (b) p-type semiconductor obtained from an intrinsic semiconductor ? Name the majority charge carriers in each of the semiconductors. A Answer ¥ 2 Marks ▶ 𝑛− type semiconductors are obtained when the intrinsic semiconductor are dopped with a pentavalent impurity. ▶ 𝑝− type semiconductors are obtained when the intrinsic semiconductors are dopped with a trivalent impurity. Majority charge carriers in (i) 𝑛−type −→ electrons (ii) 𝑝−type −→ holes Very Important § 2022 55/6/1 Compart Question 45 A 𝑝−type semiconductor is electrically neutral although it has holes as the majority carriers. Justify. A Answer ¥ Set 1, 1 Marks The crystal maintains an overall charge neutrality as the charge of additional charge carriers is just equal and opposite to that of the ionised cores in the lattice. Question 46 In 𝑛−type semiconductor, explain how the crystal is electrically neutral although electrons are the majority carriers in it. A Answer ¥ Set 2, 1 Marks Crystal is electrically neutral as the charge of additional electrons provided by donor impurity is just equal and opposite to that of the ionised cores in the lattice. Question 47 Draw V−I characteristics of a 𝑝 − 𝑛 junction diode. Answer the following giving reasons (a) Why is the reverse bias current almost independent of applied voltage up to breakdown voltage ? (b) Why does the reverse current show a sudden increase at breakdown voltage ? A Answer ¥ 3 Marks (a) The current is not limited by the magnitude of the applied voltage but is limited due to the concentration of the minority carriers on either side of the junction. (b) At the breakdown voltage, a large number of covalent bonds break, resulting in the increase of large number of charge carriers. Hence current increases suddenly. Question 48 (a) Explain the formation of a 𝑝 − 𝑛 junction. (b) Can we take one slab of 𝑝−type semiconductor and physically join it to another 𝑛−type semiconductor to get a 𝑝 − 𝑛 junction ? Explain. A Answer ¥ 3 Marks (a) During the formation of 𝑝 − 𝑛 junction due to concentration gradient across 𝑝 and 𝑛 sides, holes diffuse from 𝑝 side to 𝑛 side and electrons diffuse from n side to 𝑝 side This motion of charge carriers gives rise to diffusion current across the junction. Diffusion of electrons develops a layer of positive charge on 𝑛 side of the junction and diffusion of holes develops a layer of negative charge on 𝑝 side of the junction. Due to this space charge region on either side of the junction an electric field is developed. This electric field drifts charge carriers across the junction and sets up drift current in a direction opposite to diffusion current. This process continues until the diffusion current is equal to drift current. Thus 𝑝 − 𝑛 junction is formed. (b) No, Any slab, howsoever flat, will have roughness much larger than the inter-atomic spacing (≈ 2 to 3 Å) and hence continuous contact at the atomic level will not be possible. The junction will behave as a discontinuity for the flowing charge carriers. Question 49 Explain how the barrier potential is formed in a 𝑝 − 𝑛 junction. How is it affected in (a) forward bias, and A Answer (b) reverse bias ? ¥ Set 2, 3 Marks In a 𝑝 − 𝑛 junction diode, the loss of electrons from the 𝑛−region and the gain of electrons by the 𝑝−region causes a difference of potential across the junction of the two regions. This potential tends to prevent the movement of electrons from the n region to the 𝑝 region. Hence a potential barrier is created across the junction. (a) In forward bias, the barrier potential is reduced (b) In reverse bias, the barrier potential increases Question 50 C and Si both have the same lattice structure, but C is an insulator while Si is a semiconductor. Justify. A Answer ¥ Set 3, 1 Marks Energy required to liberate an electron (i.e ionisation energy) of C is greater than Si. Hence number of free electrons for conduction in Si is more than C. Question 51 Draw the energy band diagrams (at T > 0 K) for 𝑛−type and 𝑝−type semiconductors. Using diagram, explain why in 𝑛−type semiconductor the conduction band has most electrons from the donor impurities. A Answer ¥ Set 3, 3 Marks Energy Band Diagram of 𝑛−type Energy Band Diagram of 𝑝−type In the energy band of 𝑛−type semiconductors, donor energy level E𝐷 is formed slightly below the bottom of E𝐶 of the conduction band. Hence electrons from this level move into the conduction band easily. § 2022 Term II 55/1/1 Question 52 Write the characteristics of a 𝑝 − 𝑛 junction which makes its suitable for rectification. A Answer ¥ 2 Marks The unidirectional property of a diode makes it suitable for rectification. Alternatively The diode conducts when forward biased and does not conduct when reverse biased. Question 53 Explain the formation of depletion layer and barrier potential in a 𝑝 − 𝑛 junction diode. A Answer ¥ Set 2, 2 Marks Formation of depletion region: During formation of 𝑝 − 𝑛 junction a hole diffuses from 𝑝 to 𝑛 region and electron diffuses from 𝑛 to 𝑝 region due to concentration gradient. It leaves behind immobile ions at the junction on both sides. This space charge region at the junction is together called depletion region. Potential Barrier: The immobile ions on 𝑝 side are negative and on 𝑛 side are positive. They create a potential difference preventing the further flow of majority charge carriers. This potential is called as barrier potential. Question 54 Draw energy band diagrams of 𝑛−type and 𝑝−type semiconductors at temperature T > 0K, depicting the donor and acceptor energy levels. Mention the significance of these levels. A Answer ¥ Set 1, 1 Marks Significance 𝑛−type semiconductors: small energy gap between donor level and conduction band which can be easily covered by thermally excited electrons. 𝑝−type semiconductors: small energy gap between acceptor level and valence band which can be easily covered by thermally excited electrons. Alternatively The conductivity of semiconductor is improved with the creation of donor and acceptor levels. Question 55 Distinguish between intrinsic and extrinsic semiconductors. Although in an extrinsic semiconductor ne ≠ nh, yet it is electrically neutral. Why? A Answer ¥ Set 3, 2 Marks Intrinsic semiconductors are pure semiconductors while extrinsic semiconductors are doped with either trivalent or pentavalent impurities. Extrinsic semiconductor maintains an overall charge neutrality as the charge of additional charge carriers is just equal and opposite to that of the ionised cores in the lattice. § 2021 55/C Compart Question 56 How does the energy gap of an intrinsic semiconductor change when doped with a trivalent impurity? A Answer ¥ Set 1, 1 Marks Energy gap decreases. Question 57 In a 𝑝 − 𝑛 junction under equilibrium, there is no net current. Why? A Answer ¥ Set 1, 1 Marks It is because the diffusion current becomes equal to drift current. OR On what factor does the wavelength of the light emitted by an LED depend? A Answer ¥ Set 1, 1 Marks Depends on energy gap/band gap of the semiconductor. Question 58 State whether the given ideal diodes are forward or reverse biased A Answer ¥ 2 Marks (i) Reverse Biased (ii) Reverse Biased Question 59 With the help of a circuit diagram, explain the working of a diode as a half-wave rectifier. A Answer ¥ 2 Marks When the voltage at A is positive, the diode is forward biased and it conducts. When A is negative, the diode is reverse-biased and it does not conduct. The reverse saturation current of a diode is negligible and can be considered equal to zero for practical purposes. Thus output is obtain only during positive half cycle. § 2020 55/C Compart Question 60 When the temperature of an 𝑛−type semiconductor is increased, then the (a) number of free electrons increases while that of the holes decreases. (b) number of holes increases while that of the free electrons decreases. (c) number of free electrons and holes remains unchanged. (d) number of both the free electrons and the holes increase equally. A Answer ¥ Set 1, 1 Marks Number of both the free electrons and holes increases equally. Question 61 In an unbiased 𝑝 − 𝑛 junction diode, the p-side of the junction is at potential as compared to that on the 𝑛−side of the junction. A Answer Lower ¥ Set 1, 1 Marks Question 62 In an unbiased 𝑝 − 𝑛 junction diode, the n-side of potential as compared to the junction is at that on the 𝑝−side of the junction. A Answer ¥ Set 2, 1 Marks Higher Question 63 The potential barrier of a 𝑝 − 𝑛 junction tends to prevent the movement of from 𝑛−side to 𝑝−side. A Answer ¥ Set 3, 1 Marks electrons Question 64 Explain energy bands in a crystalline silicon semiconductor. (a) Explain energy bands in a crystalline silicon semiconductor. (b) How is an intrinsic semiconductor converted into (i) 𝑝−type extrinsic semiconductor ? (ii) 𝑛−type extrinsic semiconductor ? → Draw their energy band diagrams showing impurity level. A Answer ¥ Set 3, 3 Marks (a) In silicon semiconductor there are two energy bands,conduction band and valence band separated by energy band gap balance band is filled completely or partially with electron while conduction band is empty (b.i) by adding trivalent / 13th Group element (b.ii) by adding pentavalent / 15th Group element Question 65 With the help of the circuit diagram, explain the working of a silicon 𝑝 − 𝑛 junction diode in forward biasing and draw its I−V characteristics. A Answer ¥ 2 Marks In the forward bias the width of depletion layer decreases and barrier height is reduced. It supports the movement of majority charge carriers across the junction. As soon as supply voltage exceeds barrier potential instantaneously current begins to flow through junction and increases exponentially with forward biasing voltage. Question 66 Draw the circuit diagram of a full-wave rectifier using two 𝑝 − 𝑛 junction diodes. Explain its working and draw its input and output waveforms. A Answer ¥ 3 Marks This question was repeated in 2023, 2020 55/5/1 Check 2023 PYQs above to see the answer. § 2020 55/5/1 All Sets Question 67 The , a property of materials C, Si and Ge depends upon the energy gap between their conduction and valence bands. A Answer ¥ Set 1, 1 Marks Conductivity or Resistivity Question 68 an The ability of a junction diode to alternating voltage, is based on the fact that it allows current to pass only when it is forward biased. A Answer ¥ Set 1, 1 Marks Rectify Question 69 Draw the circuit diagram of a full wave rectifier. Explain its working showing its input and output waveforms. A Answer ¥ 3 Marks During one half cycle of the input a.c. signal, only diode 1 is forward biased and conducts. During the next half cycle of the input ac signal only diode 2 is forward biased and conducts. However, due to the use of the centre tapped transformer, the current in the load flows in the same direction during both these half cycles. The current through the load is therefore unidirectional. § 2019 55/5/1 All Sets Question 70 Draw the output signal in a 𝑝 − 𝑛 junction diode when a square input signal of 10 V as shown in the figure is applied across it. A Answer ¥ Set 1, 1 Marks Question 71 When a 𝑝 − 𝑛 junction diode is forward biased, how will its barrier potential be affected ? A Answer ¥ Set 1, 1 Marks Its barrier potential gets reduced. § 2019 55(B) Question 72 Explain briefly how a potential barrier is formed in a 𝑝 − 𝑛 junction diode. A Answer ¥ 2 Marks The loss of electron from 𝑛 region and the gain of electron by the 𝑝−region causes a difference of potential across the junction of two regions. The polarity of this potential is such as to oppose further flow of carriers so that a condition of equilibrium exists. The 𝑛 material has lost electrons and 𝑝 material has acquired electrons. The 𝑛 material is thus positive relative to the 𝑝 material. Since this potential tends to prevent the movement of electron from the 𝑛−region to 𝑝−region. It is called a barrier potential. * Full book is available on Libgen Books App Publisher : Libgen Books www.cuet.pw www.cbse.page www.libgen.co.in Click the website link to open the webpage For CUET UG Question Bank www.cuet.pw For CBSE Question Bank www.cbse.page For Online Reading via Laptops www.libgen.co.in } Telegram Channels Physics Click to join the Telegram Channel Chemistry Click to join the Telegram Channel Physical Education Click to join the Telegram Channel CUET UG Books Click to join the Telegram Channel Click to join the Telegram Channel