IPA045N10N3G
MOSFET
OptiMOSTM3Power-Transistor,100V
TO-220-FP
Features
•N-channel,normallevel
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•175°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplication
•Idealforhigh-frequencyswitchingandsynchronousrectification
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
100
V
RDS(on),max
4.5
mΩ
ID
64
A
Drain
Pin 2
Gate
Pin 1
Source
Pin 3
Type/OrderingCode
Package
Marking
RelatedLinks
IPA045N10N3 G
PG-TO220-FP
045N10N
-
1)
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.4,2016-01-22
OptiMOSTM3Power-Transistor,100V
IPA045N10N3G
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Final Data Sheet
2
Rev.2.4,2016-01-22
OptiMOSTM3Power-Transistor,100V
IPA045N10N3G
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Values
Unit
Note/TestCondition
64
45
A
TC=25°C1)
TC=100°C
-
256
A
TC=25°C
-
-
540
mJ
ID=64A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
39
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-55
-
175
°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
Pulsed drain current1)
ID,pulse
-
Avalanche energy, single pulse
EAS
Gate source voltage
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction-case
Thermal resistance, juntion-ambient,
Leaded
Values
Min.
Typ.
Max.
RthJC
-
-
3.8
K/W
-
RthJA
-
-
80
K/W
-
Unit
Note/TestCondition
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Min.
Typ.
Max.
V(BR)DSS
100
-
-
V
VGS=0V,ID=1mA
Gate threshold voltage
VGS(th)
2
2.7
3.5
V
VDS=VGS,ID=150µA
Zero gate voltage drain current
IDSS
-
0.1
10
1
100
µA
VDS=100V,VGS=0V,Tj=25°C
VDS=100V,VGS=0V,Tj=125°C
Gate-source leakage current
IGSS
-
1
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
3.9
4.7
4.5
7.7
mΩ
VGS=10V,ID=64A
VGS=6V,ID=32A
Gate resistance
RG
-
1.4
-
Ω
-
Transconductance
gfs
60
119
-
S
|VDS|>2|ID|RDS(on)max,ID=64A
1)
See Diagram 3
Final Data Sheet
3
Rev.2.4,2016-01-22
OptiMOSTM3Power-Transistor,100V
IPA045N10N3G
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Unit
Note/TestCondition
8410
pF
VGS=0V,VDS=50V,f=1MHz
1100
1460
pF
VGS=0V,VDS=50V,f=1MHz
-
41
-
pF
VGS=0V,VDS=50V,f=1MHz
td(on)
-
25
-
ns
VDD=50V,VGS=10V,ID=64A,
RG,ext=1.6Ω
Rise time
tr
-
47
-
ns
VDD=50V,VGS=10V,ID=64A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
50
-
ns
VDD=50V,VGS=10V,ID=64A,
RG,ext=1.6Ω
Fall time
tf
-
15
-
ns
VDD=50V,VGS=10V,ID=64A,
RG,ext=1.6Ω
Unit
Note/TestCondition
Min.
Typ.
Max.
Ciss
-
6320
Output capacitance
Coss
-
Reverse transfer capacitance
Crss
Turn-on delay time
Table6Gatechargecharacteristics1)
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
28
-
nC
VDD=50V,ID=64A,VGS=0to10V
Gate to drain charge
Qgd
-
16
-
nC
VDD=50V,ID=64A,VGS=0to10V
Switching charge
Qsw
-
25
-
nC
VDD=50V,ID=64A,VGS=0to10V
Gate charge total
Qg
-
88
117
nC
VDD=50V,ID=64A,VGS=0to10V
Gate plateau voltage
Vplateau
-
4.4
-
V
VDD=50V,ID=64A,VGS=0to10V
Output charge
Qoss
-
117
155
nC
VDD=50V,VGS=0V
Unit
Note/TestCondition
Table7Reversediode
Parameter
Symbol
Diode continous forward current
Values
Min.
Typ.
Max.
IS
-
-
64
A
TC=25°C
Diode pulse current
IS,pulse
-
-
256
A
TC=25°C
Diode forward voltage
VSD
-
0.9
1
V
VGS=0V,IF=64A,Tj=25°C
Reverse recovery time
trr
-
69
-
ns
VR=50V,IF=64A,diF/dt=100A/µs
Reverse recovery charge
Qrr
-
140
-
nC
VR=50V,IF=64A,diF/dt=100A/µs
1)
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.4,2016-01-22
OptiMOSTM3Power-Transistor,100V
IPA045N10N3G
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
50
70
60
40
50
30
ID[A]
Ptot[W]
40
30
20
20
10
10
0
0
50
100
150
0
200
0
50
100
TC[°C]
150
200
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
1 µs
100 µs 10 µs
0.5
2
10
100
0.2
ZthJC[K/W]
ID[A]
1 ms
1
10
10 ms
0.1
0.05
10-1
DC
0.02
100
0.01
single pulse
10-1
10-1
100
101
102
103
10-2
10-5
10-4
10-3
VDS[V]
10-1
100
101
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-2
ZthJC=f(tp);parameter:D=tp/T
5
Rev.2.4,2016-01-22
OptiMOSTM3Power-Transistor,100V
IPA045N10N3G
Diagram5:Typ.outputcharacteristics
250
Diagram6:Typ.drain-sourceonresistance
10
10 V
6V
7.5 V
5.5 V
200
8
4.5 V
RDS(on)[mΩ]
150
ID[A]
5V
100
5V
6
6V
7.5 V
4
10 V
4.5 V
50
0
2
0
1
2
3
4
0
5
0
20
40
VDS[V]
60
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
200
160
150
120
gfs[S]
ID[A]
80
100
80
100
ID[A]
100
80
25 °C
50
40
175 °C
0
0
2
4
6
8
0
0
VGS[V]
40
60
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
20
gfs=f(ID);Tj=25°C
6
Rev.2.4,2016-01-22
OptiMOSTM3Power-Transistor,100V
IPA045N10N3G
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
10
4.0
3.5
8
3.0
1500 µA
2.5
RDS(on)[mΩ]
6
150 µA
VGS(th)[V]
98 %
typ
4
2.0
1.5
1.0
2
0.5
0
-60
-20
20
60
100
140
0.0
-60
180
-20
20
Tj[°C]
60
100
140
RDS(on)=f(Tj);ID=64A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
10
180
Tj[°C]
103
Ciss
25 °C
175 °C
25 °C, 98%
175 °C, 98%
Coss
102
IF[A]
C[pF]
103
102
101
Crss
101
0
20
40
60
80
100
0.0
0.5
VDS[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
1.0
1.5
2.0
VSD[V]
IF=f(VSD);parameter:Tj
7
Rev.2.4,2016-01-22
OptiMOSTM3Power-Transistor,100V
IPA045N10N3G
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
10
25 °C
8
100 °C
80 V
VGS[V]
IAS[A]
50 V
6
150 °C
101
20 V
4
2
100
100
101
102
103
0
0
20
tAV[µs]
40
60
80
100
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=64Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Gate charge waveforms
110
VBR(DSS)[V]
105
100
95
90
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
8
Rev.2.4,2016-01-22
OptiMOSTM3Power-Transistor,100V
IPA045N10N3G
5PackageOutlines
Figure1OutlinePG-TO220-FP,dimensionsinmm/inches
Final Data Sheet
9
Rev.2.4,2016-01-22
OptiMOSTM3Power-Transistor,100V
IPA045N10N3G
RevisionHistory
IPA045N10N3 G
Revision:2016-01-22,Rev.2.4
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.4
2016-01-22
Insert RthJA
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Final Data Sheet
10
Rev.2.4,2016-01-22