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Modern Physics Letters B
(2023) 2350162 (11 pages)
#
.c World Scienti¯c Publishing Company
DOI: 10.1142/S0217984923501622
E®ect of temperature on the current transfer mechanism
in the reverse I–V characteristics of the
n-CdS/i-CdSx Te1¡x /p-CdTe heterostructure
A. S. Achilov*,‡, R. R. Kabulov*, Sh. B. Utamuradova†,§ and S. A. Muzafarova†
*Physical-Technical
Institute, Uzbekistan Academy of Sciences,
Chingiz Aytmatov Street 2B, Tashkent 100084, Uzbekistan
†
Institute of Semiconductor Physics and Microelectronics,
NU of Uzbekistan Yangi Almazor Street 20,
Tashkent 100057, Uzbekistan
‡
alimardon.uzb@mail.ru
§samusu@rambler.ru
Received 9 January 2023
Revised 19 April 2023
Accepted 14 May 2023
Published 12 July 2023
In this work, we study the in°uence of the temperature on the mechanism of current transfer in
the reverse branch of the current–voltage (I–V) characteristics of n-CdS/p-CdTe heterostructures. The study of the heterostructure, using the technique of on energy-dispersive X-ray
analysis, showed that a layer of CdSx Te1x is formed at the boundary of the heterojunction with
a varying composition, being equal x 0:48 from the side of CdS and x 0:02 from the CdTe
side. In the studied range of the temperatures and bias voltage, the current-voltage characteristics are described well by a power law J ¼ AV , where the exponent changes with the
temperature and voltage. Under the in°uence of the temperature and charge carrier concentration, the mechanism of current transfer in the structure changes from exclusion ( 0:5) to
ohmic ( 1), and then goes to injection ( 2). The inhomogeneous intermediate CdSx Te1x
i-layer at the boundary of the n-CdS/p-CdTe heterostructure is characterized by the presence of
metastable states that rearrange at high temperatures and certain charge carrier concentrations. As a result of this, the exclusion slows down and electrons are injected from the rear
molybdenum contact.
Keywords: Heterostructure; CdS; CdTe; solid solution; reverse branch of current–voltage
characteristics; temperature; current transfer; exclusion; injection.
1. Introduction
In the process of creating an n-CdS/p-CdTe heterostructure, semiconductor binary
CdS compounds are deposited by low-temperature,1–5 and high-temperature methods.6,7
In the low-temperature method, due to di®erences in the electron a±nity energy and
‡ Corresponding
author.
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A. S. Achilov et al.
the crystal lattice constant, recombination centers are formed at the boundary of the
n-CdS/p-CdTe heterojunction, which lead to a deterioration in photocurrent characteristics. When using high-temperature methods of deposition of a CdS layer on
the surface of a CdTe layer in the process of creating a heterostructure, the layers
interacting with each other form a transition layer (TL) at the heterojunction
boundary, which consists of a CdSx Te1x solid solution (SS) with a continuous
composition x (0 < x < 1),8–10 which arises due to the mutual di®usion of sulfur (S)
atoms in CdTe and tellurium (Te) atoms into the CdS layer. Studies carried out
revealed that the e±ciency of n-CdS/p-CdTe heterostructure solar cell (SC) is
largely determined by the perfection of the crystal structure of the SS and its geometric dimensions.11–20 Ensuring the continuity of the composition of the CdSx Te1x
layer over the entire thickness at the boundary of the heterojunction is important
when creating a heterostructure. The band gap of the TL of the heterostructure (HS)
should increase towards the irradiated frontal surface.21–28 The built-in electric ¯eld,
due to the band gap gradient Eg , leads to the extraction of minority charge carrierselectrons from the photoactive part of the p-CdTe heterojunction layer to the n-CdS
layer. The depth of ¯eld penetration into the volume of the photoactive part of the
structure depends on the level of doping, compensation and concentration of deep
centers,29–33 which will lead to an increase in the collection coe±cient of photogenerated carriers. The decrease in the photosensitivity of the structure in the shortwavelength region of the absorption spectrum is determined by the thicknesses of the
n-CdS bu®er layer and the CdSx Te1x TL, and their band gaps.34–36
Studies carried out in Ref. 37 showed that the phase composition and thickness of
the intermediate layer in the n-CdS/p-CdTe structure strongly depend on the
technological regime of formation of the heterostructure, depending mainly on the
substrate temperature and duration growth process of the n-CdS layer. It should be
noted that with an increase in the substrate temperature, the number of crystallites
with an orientation in the (111) direction increases sharply.7
The study of the phase of the intermediate layer in the SS of the n-CdS/p-CdTe
heterostructure and its in°uence on the I–V characteristics is of scienti¯c and
practical interest. Since the n-CdS/p-CdTe heterostructure is used in instrumentation in the reverse switching regime, the current transfer mechanism was studied
in connection with this in the reverse branch of the I–V characteristics of the
heterostructure.
2. Materials and Methods
More than 30 n-CdS/p-CdTe heterostructures with similar I–V characteristics were
fabricated for the study, with a spread of 5%. n-CdS/p-CdTe structures were
created by thermal deposition of a 3 m thick n-CdS layer in vacuum (106 Torr)
onto the surface of large-block p-CdTe ¯lms,8,37 which were obtained by gas transport epitaxy in a stream hydrogen, at atmospheric pressure on a molybdenum
substrate, under the conditions of the technological regime presented in Ref. 38.
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In°uence of the temperature on the mechanism of current transfer
Fig. 1. Schematic representation of the In/CdS/CdSx Te1x /CdTe/Mo heterostructure.
The molybdenum substrate also served as an electrical contact. p-CdTe ¯lms with an
area S 1 cm2, grown at a substrate temperature T 650–700 C, and a thickness of
50–70 m, had a resistivity 2:5 107 cm.39 The front electrical contact made
of indium (In) was deposited in the form of a comb.40 Figure 1 shows a schematic
representation of the real design of the n-CdS/p-CdTe heterostructure, which consisted of In-CdS-CdSx Te1x -CdTe-Mo. This design of the heterostructure is built on
the basis of experimental studies.
The chemical composition of the intermediate transition layer CdSx Te1x was
determined from the energy-dispersive X-ray analysis of the n-CdS/p-CdTe heterostructure by the depth of the p–n-junction. The studies were carried out using an
energy dispersive X-ray analyzer of the brand energy dispersive X-ray (EDX) Oxford
Instrument Aztec Energy Advanced X-act SDD. For layer analysis, the n-CdS/
p-CdTe heterostructure, after the ¯nal fabrication process, was separated from the
molybdenum substrate. Then it was broken into two parts, and a chemical analysis
of the elemental composition of the n-CdS/p-CdTe structure and its CdSx Te1x
transition layer was carried out on the fresh end of the heterostructure. We determined the elemental chemical composition of the structure at 7 points. The distance
between the dots was 1 m. (Fig. 2).
3. Results and Discussion
An analysis of the distribution of chemical elements Cd, Te and S over the depth of
the CdS/CdTe heterostructure shows the presence of regions of n-CdS, p-CdTe
layers, and an intermediate CdSx Te1x layer between them (Fig. 1). It follows from
2350162-3
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A. S. Achilov et al.
Fig. 2. (Color online) Distribution pro¯le of Cd, Te and S elements over the depth of the CdSx Te1x structure.
the experimental results (Fig. 2) that the n-CdS layer has a thickness of 1 m,
while the atomic content of Cd is 53% and S 47%. The presence of an intermediate CdSx Te1x layer indicates the penetration of S atoms into the CdTe layer,
and Te atoms into the CdS layer, due to di®usion. S at a thickness of 4 m is 1.5%;
the Te content in the intermediate layer increases from 1.5% to 52%. Cd, on the
other hand, decreases slightly from 53% to 47%. Based on the experimental data
(Fig. 2), the main parameters of semiconductor layers, such as band gaps and lattice
constants, were calculated using empirical formulas (1.2), given in Ref. 41:
Eg ðxÞ ¼ 1:73x2 0:73x þ 1:45
ðeVÞ;
a0 ðxÞ ¼ 0:6477 0:0657x ðnmÞ:
ð1Þ
ð2Þ
Here, x is a composition value, a0 (x) – lattice parameter.
It can be seen from the experimental results (Fig. 2) that the size of the transition
layer of the CdSx Te1x SS of the CdS/CdTe heterostructure is 3 m. As a result
of the di®usion of S atoms, the real thickness of the CdS layer decreased to 1 m,
and a CdSx Te1x transition layer was formed at the boundary of the CdS/CdTe
heterostructure.
The studies performed have shown that the phase composition and thickness of
the intermediate SS layer, as mentioned above, depend mainly on the selection of
the substrate temperature and the duration of the process.37,40 The intermediate
CdSx Te1x layer begins to form from the substrate temperature Ts 150 C.42 It has
been experimentally established that with an increase in the temperature of the
substrate, the CdSx Te1x SS begins to be enriched in S atoms and the value of x
increases. Each composition x of SS characterizes the corresponding value of the
lattice constant a0 , which is between the lattice constants of CdS (a0 ¼ 5:832 Å) and
CdTe (a0 ¼ 6:423 Å).
2350162-4
In°uence of the temperature on the mechanism of current transfer
Table 1. The main parameters of the CdSx Te1x
transition layer from the depth of the CdS/CdTe
heterostructure. Calculated by using Eg ; ao .
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d (m)
0
1
2
3
4
5
6
X
Eg (eV)
ao (nm)
1
0.96
0.65
0.3
0.04
0
0
2.45
2.4
2.1
1.75
1.48
1.45
1.45
0.582
0.585
0.605
0.628
0.645
0.647
0.647
Fig. 3. Energy band diagram of the heterostructure n-CdS/p-CdTe. The full structure is In/n-CdS/
i-CdSx Te1x /p-CdTe/MoO3/Mo.
Table 1 presents the results of calculating the main parameters of the CdSx Te1x
transition layer over the depth of the CdS/CdTe heterostructure using relations
(1.2).
Figure 3 shows the energy band diagram of the n-CdS/p-CdTe heterostructure,
taking into account the calculation results (Table 2).
Studies of the reverse branch of the I–V characteristics (Fig. 4) showed that the
dependence plotted on a double logarithmic scale is described by a linear dependence
of the current on the voltage J V .43 In the temperature range from 203 K to
283 K 1 1. As the temperature increases, the value of in the dependence J V gradually decreases and, starting from the temperature T ¼ 343 K, reaches its
minimum value equal to 1 0:44. In the temperature range from T ¼ 303 K to
T ¼ 343 K, from the voltage V 1:5 V, the second section J V 2 appears, which
at T ¼ 303 K has the value 2 1:4, and it decreases with temperature and has the
value 2 1 at T ¼ 343 K. At T ¼ 363–373 K range, the second section disappears.
2350162-5
A. S. Achilov et al.
No.
T ðKÞ
T ( C)
1
2
n, s
1
2
3
4
5
6
7
8
9
10
203
223
243
263
283
303
323
343
363
373
70
50
30
10
10
30
50
70
90
100
1
0.95
0.92
0.93
0.93
0.62
0.51
0.44
0.66
0.64
1.4
1.2
0.95
3.4.109
3.1.109
2.7.109
2.4.109
2.1.109
1.5.109
7.6.108
5.2.108
3.3.108
1.7.108
103
J (µA/cm2)
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Table 2. Results of calculation of parameters 1 and
2 in the J V dependence of the I–V characteristic of
the CdS/CdTe heterostructure.
(1) 203
(2) 223
(3) 243
(4) 263
(5) 283
(6) 303
(7) 323
(8) 343
(9) 363
(10)373
102
101
100
10-1
10-2
10-3
10-2
10-1
U (V)
100
101
Fig. 4. (Color online) Inverse branch of the I–V characteristic of the n-CdS/p-CdTe structure on a double
logarithmic scale at di®erent temperatures T , K: 1-203, 2-223, 3-243, 4-263, 5-283, 6-303, 7-323, 8-343, 9363, 10-373.
Table 2 presents the results of calculating the parameters 1 and 2 in the J V dependence of the I–V characteristics of the CdS/CdTe heterostructure.
Assuming that in the linear section of the I–V characteristics (I ¼ AV 1 , 1 1)
the current transfer in the temperature range 203–343 K is carried out by equilibrium
main carriers, the values of the speci¯c resistance of the base and the concentration of equilibrium holes p0 were calculated for various temperatures.
The results of experimental studies of the calculated p0 values are shown in Fig. 5,
on the basis of which the value of the activation energy of equilibrium charge carriers
in the p-CdTe layer was estimated.
It follows from the results of the study (Fig. 5) that, in the temperature range
T ¼ 203–283 K, the main contribution to the current transfer is made by equilibrium
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In°uence of the temperature on the mechanism of current transfer
Fig. 5. Experimental temperature dependence of the concentration of the main equilibrium charge
carriers in the In/CdS/CdTe structure.
charge carriers, which are activated from levels Ea1 0:22 eV, corresponding to
the activation energy of the acceptor center.39,42 At temperatures 283–373 K, energy
levels with activation energy Ea2 EgCdTe 1:51 eV participate in current
transfer, which corresponds to thermal transitions valence band–conduction band
with the formation of electron–hole pairs. As a result, the slope of the J V dependence changes, and segments with 1 0:5 0:1 appear. The appearance of the
regularity I V 1=2 in the reverse branch of the I–V characteristic as a function of
current versus voltage indicates the presence of an exclusion mode in the reverse
branch of the I–V characteristic, i.e. expansion of the space charge region.43,44
When the p–n junction is turned on in the opposite direction, the reverse current
density (Io Þ, assuming that n ¼ p ¼ 0 , Io can be written as Eq. (3)43:
Io ¼ qLn ðnp = n Þ þ qdðni =2 0 Þ;
ð3Þ
where Ln is the di®usion length of electrons, np is the electron concentration in the
p-CdTe layer, n is the electron lifetime in the p-CdTe layer, d is the thickness of the
space charge region and ni is the concentration of intrinsic carriers in the p-CdTe
layer.
The ¯rst term in relation (3) is the current arising as a result of thermal generation of charge carriers with a speed np = n in the base layer with a width Ln beyond
the space charge region, which means the reverse saturation current ðIsat Þ, and the
second part in relation (3) is the generation current arising in space charge region, in
the p-CdTe layer. The space charge region is depleted in carriers, that is, pn n 2i .
According to the Shockley–Read theory,44 the generation of charge carriers in the
reverse branch of the I–V characteristics has the relation r g ¼ ni =2 0 , that is,
when the p n-junction is reverse-biased, carrier generation in d dominates over
recombination.
2350162-7
A. S. Achilov et al.
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Taking into account the above assumptions, the generation current (3),45 taking
into account d, is written in the form (4), that is, the current in the reverse branch of
the I–V characteristic depends on the applied voltage I V 1=2 .
1
1
n
2q""0 2
n
2q""0 2 1
k i
V 2;
ð4Þ
Ir ¼ i
2 0 NA;eff
2 0 NA;eff
where "; "0 is the permittivity of the semiconductor and vacuum, respectively,
NA;eff ¼ NA ND the e®ective concentration of charged acceptor centers and k
is a contact potential di®erence.
From the experimental results (Fig. 4) it is possible to determine the value of
the lifetime of non-equilibrium carriers in the region of the space charge 0 , using
relations (5).
1
0 ¼
1
1
ni ð2q""0 Þ 2 ðV 22 V 12 Þ
1
2
2N A;eff
ðIr2 Ir1 Þ
:
ð5Þ
The values of the lifetime of non-equilibrium carriers, determined using Eq. (5), are
presented in the last column of Table 2. It is assumed that NA;eff ¼ 3 1010 cm3 . The
e®ective concentration of charged acceptor centers (NA;eff Þ was determined from the
rapidly falling section of the capacitance-voltage dependence C 2 on V .46
As mentioned above, with increasing temperature, the value of the exponent 1
decreases from 1 to 0.93, and starting from the temperature T ¼ 303 K, a linear
section with 1 < 1 0:5 appears on the reverse branch of the I–V characteristics,
which remains until T ¼ 373 K. At the reverse branch of the I–V characteristics, at a
temperature T ¼ 303 K, a second section appears with 2 1:4, which decreases
with temperature, and becomes equal to 2 1 at T ¼ 343 K.
Let us analyze the experimental results of the reverse branch of the I–V characteristics of the heterostructure, taking into account the mechanisms of current °ow
in them. It follows from Fig. 3 (Table 2) that free charge carriers participate in the
current formation mechanism in the case of (a) without a trap semiconductor,47 (b)
generated carriers in the exclusion mode48 and (c) injected charge carriers.47
At relatively low temperatures (T ¼ 203–283 K), the current transfer is determined by the resistance of the high-resistance CdSx Te1x layer, since it is much
greater than the resistance of the base layer and the volume charge region. The I(V)
dependence is described by Ohm's law I ¼ AV 1 with 1 1. With an increase in
temperature in the space charge region, the heat generation of charge carriers
increases and the current transfer is described by relation (4), with is, I ¼ AV 1 with
1 0:5. It is known that in the regime of charge carrier injection, in the case of lowdensity traps,48 the dependence has the form I ¼ AV 2 with 2 2. That is, in the
region 2 , the current transfer from the exclusion mode to injection takes place. This
is most likely due to a change in recombination processes with increasing temperature, as a result of which exclusion slows down and electron injection begins from the
rear contact, which leads to an increase in 2 from 1 to 1.4.43 The inhomogeneous
2350162-8
In°uence of the temperature on the mechanism of current transfer
intermediate i-layer CdSx Te1x at the boundary of the CdS/CdT heterostructure is
characterized by the presence of metastable states that can rearrange under certain
conditions, such as high temperature and certain charge carrier concentrations.42
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4. Conclusions
The distribution of the elemental composition over the thickness of the CdS/CdTe
heterojunction is established. The possibility of the formation of a CdSx Te1x i-layer
SS that changes linearly in composition, which arises as a result of the di®usion of S
atoms into the CdTe layer, and Te atoms into the CdS layer, is shown. The composition of the CdSx Te1x TS at the n-CdS/p-CdTe heterointerface strongly
depends on the technological parameters, especially on the substrate temperature Ts .
The thickness distribution the band gap Eg ðxÞ, the crystal lattice constants aðxÞ of
the CdSx Te1x SS has been determined. Values, aðxÞ for of SS CdSx Te1x formed
at the n-CdS/p-CdTe heterointerface lies in the range between the values a0 ðxÞ of
cadmium sul¯de and cadmium telluride.
In summary, it can be noted that a change in the ambient temperature leads to a
change in the mechanism of current transfer in the reverse branch of the I–V characteristics. The inhomogeneous intermediate i-layer, due to formation of metastable
states in the CdSx Te1x layer at the heterostructure boundary, can be rearranged
under certain conditions, such as high temperature and certain charge carrier concentrations. It has been established that in the n-CdS/p-CdTe heterostructure, in
the temperature range 293–373 K, the reverse branch of the I–V characteristics is
described by the dependence I V 1=2 , which indicates the presence in the I–V
characteristics of the n-CdS/p-CdTe heterostructure exclusion mode, which is associated with the expansion of the volume charge area when a reverse bias voltage is
applied. The appearance of the second section with 2 > 1 indicates a slowdown in
exclusion and injection of electrons from the rear molybdenum contact.
Acknowledgments
The authors would like to thank Prof. Khusniddin Olimov and Dr. Abdurashid
Mavlanov for their assistance during the proofreading of the paper. The work was
supported ¯nancially by the Program of Fundamental Research of the Academy of
Sciences of Uzbekistan on the topic \Physical foundations for the creation of opticalelectronic systems for devices and medical equipment".
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In°uence of the temperature on the mechanism of current transfer
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