http://www.fujielectric.com/products/semiconductor/
7MBR75VB120-50
IGBT Modules
IGBT MODULE (V series)
1200V / 75A / PIM
Features
Low VCE(sat)
Compact Package
P.C.Board Mount Module
Converter Diode Bridge Dynamic Brake Circuit
RoHS compliant product
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC =25°C unless otherwise specified)
Items
Symbols
Inverter
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Converter
Brake
Collector power dissipation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power dissipation
Repetitive peak reverse voltage (Diode)
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I2t (Non-Repetitive)
Conditions
VCES
VGES
IC
Icp
-IC
-Ic pulse
PC
VCES
VGES
IC
ICP
PC
VRRM
VRRM
IO
IFSM
I2t
Junction temperature
Tj
Operating junciton temperature
(under switching conditions)
Tjop
Case temperature
Maximum junction temperature
Operating temperature (under switching conditions)
Storage temperature
TC
Tjmax
Tjop
Tstg
Continuous
1ms
TC =100°C
TC =80°C
1ms
1 device
Continuous
1ms
1 device
TC =80°C
TC =80°C
50Hz/60Hz, sine wave
10ms, Tj =150°C
half sine wave
Inverter, Brake
Converter
Inverter, Brake
Converter
Isolation voltage
between terminal and copper base (*1)
Viso
between thermistor and others (*2)
AC : 1min.
Screw torque
Mounting (*3)
M5
-
Maximum
ratings
1200
±20
75
150
75
150
385
1200
±20
50
100
280
1200
1600
75
520
1352
175
150
150
150
125
175
150
-40 ~ +125
Units
V
V
A
W
V
V
A
W
V
V
A
A
A2 s
°C
2500
VAC
3.5
Nm
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)
1
1391a
MARCH 2014
7MBR75VB120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj = 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Symbols
Conditions
ICES
IGES
VGE (th)
VGE = 0V, VCE = 1200V
VGE = 0V, VGE = ±20V
VCE = 20V, IC = 75mA
VCE (sat)
(terminal)
VGE = 15V
IC = 75A
VCE (sat)
(chip)
VGE = 15V
IC = 75A
Rg(int)
Cies
ton
tr
tr (i)
toff
tf
VCE = 10V, VGE = 0V, f = 1MHz
Inverter
Collector-Emitter saturation voltage
Internal gate resistance
Input capacitance
Turn-on time
Turn-off time
VF
(terminal)
VCC = 600V
IC = 75A
VGE = +15 / -15V
RG = 2.2Ω
Tj =25°C
Tj =125°C
Tj =150°C
Tj =25°C
Tj =125°C
Tj =150°C
IF = 75A
Forward on voltage
Brake
Units
mA
nA
V
V
Ω
nF
µs
V
VF
(chip)
IF = 75A
trr
IF = 75A
Zero gate voltage collector current
ICES
VGE = 0V
VCE = 1200V
-
-
1.0
mA
Gate-Emitter leakage current
IGES
VCE = 0V
VGE = +20 / -20V
-
-
200
nA
VCE (sat)
(terminal)
VGE = 15V
IC = 50A
465
3305
2.20
2.55
2.60
1.85
2.20
2.25
4
0.39
0.09
0.53
0.06
1.90
1.40
5000
495
3375
2.65
2.30
1.20
0.60
1.00
0.30
1.00
2.35
1.0
520
3450
Reverse recovery time
Collector-Emitter saturation voltage
Internal gate resistance
Turn-on time
Turn-off time
Reverse current
Thermistor Converter
Tj =25°C
Tj =125°C
Tj =150°C
Tj =25°C
Tj =125°C
Tj =150°C
Characteristics
min.
typ.
max.
1.0
200
6.0
6.5
7.0
2.35
2.80
2.70
2.75
1.85
2.30
2.20
2.25
10
6.0
0.39
1.20
0.09
0.60
0.03
0.53
1.00
0.06
0.30
2.20
2.65
2.35
2.30
1.70
2.15
1.85
1.80
0.35
VCE (sat)
(chip)
VGE = 15V
IC = 50A
Rg(int)
ton
tr
toff
tf
IRRM
-
Tj =25°C
Tj =125°C
Tj =150°C
Tj =25°C
Tj =125°C
Tj =150°C
VCE = 600V
IC = 50A
VGE = +15 / -15V
RG = 15Ω
VR = 1200V
terminal
chip
Forward on voltage
VFM
(chip)
Reverse current
IRRM
Resistance
R
B value
B
VR = 1600V
T = 25°C
T = 100°C
T = 25 / 50°C
Symbols
Conditions
IF = 75A
µs
V
Ω
µs
mA
V
mA
Ω
K
Thermal resistance characteristics
Items
Thermal resistance (1device)
Rth(j-c)
Contact thermal resistance (1device) (*4)
Rth(c-f)
Inverter IGBT
Inverter FWD
Brake IGBT
Converter Diode
with Thermal Compound
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
2
Characteristics
min.
typ.
max.
0.39
0.55
0.54
0.43
0.05
-
Units
°C/W
7MBR75VB120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
Tj= 150°C / chip
150
150
VGE =20V
VGE=20V
15V
12V
125
Collector current: IC [A]
Collector current: IC [A]
125
100
75
10V
50
25
12V
100
75
10V
50
25
8V
0
8V
0
0
1
2
3
4
5
0
Collector-Emitter voltage: VCE[V]
2
3
4
5
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25°C / chip
8
Tj=25°C
Collector - Emitter voltage: VCE [V]
150
Tj=150°C
125
Collector current: IC [A]
1
Collector-Emitter voltage: VCE[V]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
100
Tj=125°C
75
50
25
0
6
4
IC=150A
IC=75A
IC=38A
2
0
0
1
2
3
4
5
5
10
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
Collector - Emitter voltage: VCE [200V/div]
Gate - Emitter voltage:
VGE [5V/div]
100.0
Cies
1.0
Cres
Coes
0.1
0.0
0
10
20
20
25
[ Inverter ]
Dynamic gate charge (typ.)
Vcc=600V， Ic=75A，Tj= 25°C
VGE=0V, f= 1MHz, Tj= 25°C
10.0
15
Gate - Emitter voltage: VGE [V]
Collector-Emitter voltage: VCE[V]
Capacitance: Cies, Coes, Cres [nF]
15V
30
VCE
0
-700
Collector - Emitter voltage: VCE [V]
VGE
0
Gate charge: Qg [nC]
3
700
7MBR75VB120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Inverter ]
Switching time vs. Collector current (typ.)
VCC=600V, VGE=±15V, RG=2.2Ω, Tj= 125°C
[ Inverter ]
Switching time vs. Collector current (typ.)
VCC=600V, VGE=±15V, RG=2.2Ω, Tj= 150°C
10000
1000
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
10000
toff
ton
tr
100
tf
10
0
25
50
75
100
125
150
1000
ton
tr
100
tf
10
175
0
Collector current: IC [A]
[ Inverter ]
Switching time vs. gate resistance (typ.)
VCC=600V, IC=75A, VGE=±15V, Tj= 125°C
Switching loss : Eon, Eoff, Err [mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]
toff
ton
tr
100
tf
10
0.1
1.0
10.0
50
75
100
125
Collector current: IC [A]
150
100.0
Eon(150°C)
Eon(125°C)
Eoff(150°C)
Eoff(125°C)
15
10
Err(150°C)
Err(125°C)
5
0
0
25
50
75
100
125
150
175
[ Inverter ]
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 2.2Ω ,Tj =150°C
14
200
10
Eon(125°C)
8
Eoff(150°C)
175
Collector current: IC [A]
Eon(150°C)
Eoff(125°C)
6
Err(150°C)
4
Err(125°C)
2
150
125
100
RBSOA
(Repetitive pulse)
75
50
25
0
0
1
10
200
Collector current: IC [A]
[ Inverter ]
Switching Loss vs. gate resistance (typ.)
VCC=600V, IC=75A, VGE=±15V
12
175
20
Gate resistance : RG [Ω]
Switching loss : Eon, Eoff, Err [mJ/pulse ]
25
[ Inverter ]
Switching loss vs. Collector current (typ.)
VCC=600V, VGE=±15V, RG=2.2Ω
10000
1000
toff
0
100
400
800
1200
Collector-Emitter voltage : VCE [V]
(Main terminals)
Gate resistance : RG [Ω]
4
7MBR75VB120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Inverter ]
Reverse recovery characteristics (typ.)
VCC=600V, VGE=±15V, RG=2.2Ω
[ Inverter ]
Forward current vs. forward on voltage (typ.)
chip
1000
150
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
Tj=25°C
Forward current : IF [A]
125
100
75
Tj=150°C
Tj=125°C
50
25
0
0
1
2
3
4
trr(150°C)
trr(125°C)
Irr(150°C)
Irr(125°C)
100
10
5
0
50
Forward on voltage : VF [V]
100
150
200
Forward current : IF [A]
[ Converter ]
Forward current vs. forward on voltage (typ.)
chip
150
Tj=25°C
Tj=125°
Forward current : IF [A]
125
100
75
50
25
0
0
1
2
3
4
Forward on voltage : VFM [V]
[ Thermistor ]
Temperature characteristic (typ.)
100
10.00
n
τ
n
rn
[°C/W]
1
[sec]
0.0023
IGBT 0.04183
FWD 0.05899
B-IGBT 0.05792
Conv 0.04612
2
0.0301
0.10606
0.14957
0.14685
0.11694
3
0.0598
0.14983
0.21130
0.20746
0.16520
4
0.0708
0.09228
0.13014
0.12777
0.10174
1.00
Resistance : R [kΩ]
Thermal resistanse : Rth(j-c) [ °C/W ]
Transient thermal resistance (max.)
FWD[Inverter]
IGBT[Brake]
Conv. Diode
IGBT[Inverter]
0.10
0.01
0.001
10
1
0.1
0.010
0.100
-60
1.000
-40
-20
0
20
40
60
80
100 120 140 160 180
Temperature [°C ]
Pulse width : Pw [sec]
5
7MBR75VB120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
Tj= 25°C / chip
100
VGE=20V
15V
VGE=20V
15V
12V
Collector current: IC [A]
Collector current: IC [A]
100
75
50
10V
25
75
12V
50
10V
25
8V
8V
0
0
0
1
2
3
4
5
0
Collector-Emitter voltage: VCE [V]
4
5
Tj= 25°C / chip
8
Tj=25°C
Collector - Emitter voltage: VCE [V]
Collector current: IC [A]
3
[ Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=150°C
75
Tj=125°C
50
25
0
6
4
Ic=100A
Ic=50A
Ic=25A
2
0
0
1
2
3
4
5
5
10
[ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.)
Collector - Emitter voltage: VCE [200V/div]
Gate - Emitter voltage:
VGE [5V/div]
10.0
Cies
1.0
Cres
Coes
0.1
10
20
20
25
[ Brake ]
Dynamic gate charge (typ.)
Vcc=600V， Ic=50A，Tj= 25°C
VGE=0V, f= 1MHz, Tj= 25°C
0
15
Gate - Emitter voltage: VGE [V]
Collector-Emitter voltage: VCE[V]
Capacitance: Cies, Coes, Cres [nF]
2
Collector-Emitter voltage: VCE [V]
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
100
1
VCE
0
-600
30
Collector - Emitter voltage: VCE [V]
VGE
0
Gate charge: Qg [nC]
6
600
7MBR75VB120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Outline Drawings (Unit: mm)
Weight: 300g (typ.)
Equivalent Circuit
[ Converter ]
[ Brake ]
21(P)
[ Inverter ]
[ Thermistor ]
22(P1)
8
20
(Gu)
1(R)
2(S)
3(T)
19(Eu)
7(B)
14(Gb)
23(N)
13(Gx)
24(N1)
18
(Gv)
16
(Gw)
17(Ev)
4(U)
15(Ew)
5(V)
12(Gy)
6(W)
11(Gz)
10(En)
7
9
7MBR75VB120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2014.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
2. A
ll applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either
express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device
Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or
warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
3. A lthough Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor
products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products
become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
4. T
he products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
normal reliability requirements.
• Computers
• OA equipment
• Communications equipment (terminal devices)
• Measurement equipment
• Machine tools
• Audiovisual equipment
• Electrical home appliances
• Personal equipment
• Industrial robots etc.
5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed
below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for
such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's
product incorporated in the equipment becomes faulty.
• Transportation equipment (mounted on cars and ships)
• Trunk communications equipment
• Traffic-signal control equipment
• Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices
• Safety devices
• Medical equipment
6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic
equipment (without limitation).
• Space equipment
• Aeronautic equipment
• Nuclear control equipment
• Submarine repeater equipment
7. Copyright ©1996-2014 by Fuji Electric Device Technology Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device
Technology Co., Ltd.
8. If you have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before
using the product.
Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in
accordance with instructions set forth herein.
8