VSSC520S-M3
www.vishay.com
Vishay General Semiconductor
Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
SMC (DO-214AB)
Cathode
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Anode
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
LINKS TO ADDITIONAL RESOURCES
TYPICAL APPLICATIONS
3D 3D
For use in high frequency converters, freewheeling diodes,
DC/DC converters and polarity protection applications.
3D Models
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
5.0 A
VRRM
200 V
IFSM
100 A
VF at IF = 5.0 A
0.67 V
Case: SMC (DO-214AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free and RoHS-compliant,
commercial grade
TJ max.
150 °C
Package
SMC (DO-214AB)
Circuit configuration
Single
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
per
Polarity: color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSSC520S
Device marking code
UNIT
V5D
Maximum repetitive peak reverse voltage
Maximum DC forward current
VRRM
200
IF (1)
5.0
IF (2)
2.2
V
A
Peak forward surge current 10 ms single half sine-wave superimposed on rated load
IFSM
100
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
TJ, TSTG
-40 to +150
°C
Operating junction and storage temperature range
Notes
(1) Units mounted on PCB with 25 mm x 25 mm copper pad areas, 1 oz. FR4 PCB
(2) Free air, mounted on recommended PCB 1 oz. pad area
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Instantaneous forward voltage
TEST CONDITIONS
IF = 5.0 A
VR = 180 V
Reverse current per diode
VR = 200 V
Typical junction capacitance
4.0 V, 1 MHz
TYP.
MAX.
1.19
1.70
0.67
0.75
TA = 25 °C
2.0
-
μA
TA = 125 °C
2.0
-
mA
TA = 25 °C
TA = 125 °C
TA = 25 °C
SYMBOL
VF (1)
IR (2)
TA = 125 °C
CJ
UNIT
V
4
200
μA
3.2
25
mA
280
-
pF
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
Revision: 09-Mar-2021
Document Number: 89318
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSSC520S-M3
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
VSSC520S
RθJA (1)
95
RθJM (2)
9
UNIT
°C/W
Notes
(1) Free air, mounted on recommended PCB 1 oz. pad area; thermal resistance R
θJA - junction to ambient
(2) Units mounted on PCB with 25 mm x 25 mm copper pad areas; thermal resistance R
θJM - junction to mount
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
VSSC520S-M3/57T
0.235
57T
850
7" diameter plastic tape and reel
VSSC520S-M3/9AT
0.235
9AT
3500
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Axis Title
5
4
3
2
1
TM Measured at Terminal
TJ = 150 °C
1000
10
1st line
2nd line
2nd line
Instantaneous Forward Current (A)
Average Forward Rectified Current (A)
10000
100
6
TJ = 125 °C
TJ = 100 °C
1
TJ = 25 °C
TJ = -40 °C
0.1
0
0
25
50
75
100
125
150
100
175
0
0.2
0.4
0.6
0.8
1.0
10
1.2
1.4
1.6
TM - Mount Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 3 - Typical Instantaneous Forward Characteristics
Axis Title
4
D = 0.2
3.5
3.0
D = 1.0
D = 0.1
2.5
2.0
T
1.5
1.0
0.5
D = tp/T
tp
10
1
1000
0.1
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
0.01
100
TJ = 25 °C
0.001
0.0001
TJ = -40 °C
10
0.00001
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
1st line
2nd line
D = 0.5 D = 0.8
D = 0.3
2nd line
Instantaneous Reverse Current (mA)
4.5
Average Power Loss (W)
10000
100
10
20
30
40
50
60
70
80
90 100
Average Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Forward Power Loss Characteristics
Fig. 4 - Typical Reverse Characteristics
Revision: 09-Mar-2021
Document Number: 89318
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSSC520S-M3
www.vishay.com
Vishay General Semiconductor
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
1000
100
10
0.1
1
10
Junction to Ambient
100
10
1
0.01
100
0.1
10
1
100
Reverse Voltage (V)
t - Pulse Duration (s)
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMC (DO-214AB)
Cathode Band
Mounting Pad Layout
0.185 (4.69) MAX.
0.246 (6.22)
0.220 (5.59)
0.126 (3.20)
0.114 (2.90)
0.126 (3.20) MIN.
0.280 (7.11)
0.260 (6.60)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.320 (8.13) REF.
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Revision: 09-Mar-2021
Document Number: 89318
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 01-Jan-2023
1
Document Number: 91000