2N5109
JAN, JTX, JTXV AVAILABLE
CASE
STYLE
79-02,
1
MAXIMUM RATINGS
TO-39 (TO-205AD)
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
20
Vdc
Co Hector- Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
v EBO
3.0
Vdc
<B
400
mAdc
"C
400
mAdc
PD
2.5
Watt
20
mW/°C
Rating
HIGH FREQUENCY TRANSISTOR
NPN SILICON
Base Current
Collector Current
— Continuous
Total Device Dissipation
@
Tq =
75°C(1)
Derate above 25°C
Storage Temperature
(1)
ELECTRICAL CHARACTERISTICS
(TA
= 25°C unless otherwise
-65
T stg
Total Device Dissipation at T/\
= 25°C
is
to
+200
°C
Max
Unit
1.0 Watt.
noted.)
Symbol
Characteristic
Min
Typ
|
J
OFF CHARACTERISTICS
Breakdown Voltage(2)
mAdc, RflE = 10 O)
Collector-Emitter
dC =
5.0
Collector-Emitter Sustaining Voltage
Oc =
5.0
mAdc,
=
Ib
= 15 Vdc, B =
40
—
—
Vdc
v (BR)CEO
20
—
—
Vdc
'ceo
—
—
20
AiAdc
-
-
5.0
5.0
mAdc
mAdc
100
/jAdc
0)
Collector Cutoff Current
(V CE
V(BR)CER
0)
l
Collector Cutoff Current
ICEX
(Vce = 15 Vdc, Vbe = -1.5 V, Tq = 150°C)
(V C e = 35 Vdc, V BE = -1.5 V)
Emitter Cutoff Current
(Vbe = 3.0 vdc,
'ebo
=
ic
—
—
5.0
-
o)
ON CHARACTERISTICS
DC
Current Gain
hFE
dC = 360 mAdc, V C e = 5.0 Vdc)
dC = 50 mAdc, Vce = 15 Vdc)
40
120
SMALL SIGNAL CHARACTERISTICS
Current-Gain
flC
— Bandwidth Product
= 50 mAdc, Vce =
15 Vdc,
f
= 200 MHz)
Collector-Base Capacitance
(Vcb = 15 Vdc,
Ie
=
0, f
=
1.0
FUNCTIONAL
f
—
-
MHz
Ccb
—
1.8
3.5
PF
NF
—
3.0
—
dB
G ve
11
-
-
dB
_
0.1
mW
= 200 MHz)
TEST.
Common-Emitter Amplifier Voltage Gain
dC = 50 mAdc, V C c = 15 Vdc, f = 50
(Figure
to
1)
216 MHz)
Power Input (Figure 2)
dC = 50 mAdc, Vce = 15 Vdc, Rs = 50 ohms,
Pout = 1 -26 mW, f = 200 MHz)
(2)
1200
MHz)
Noise Figure
dC = 10 mAdc, Vce = 15 Vdc,
h
Pulsed thru a 25
mH
Inductor;
50% Duty
Pin
Cycle.
7-34
2N5109
FIGURE
1
- RF AMPLIFIER FOR VOLTAGE
GAIN TEST CIRCUIT
Pin
(Zg
75
!!
CI.C2.C3.C5
C4
C6, C7
C8
0.002 „f
0.03„f
I500pf
18 pF
R3
R4
330!!,
1W
200S1.
Tl
4 Turns
1/4W
»30 Win
wound on "Indiana General'
»CF 102 Ql, or equivalent
Bifilar
Core
FIGURE
2
- 200 MHz TEST CIRCUIT
C1.C2.C3 1.0-30pF
C4 1.0-20pF
C5 10.000 pF
C6. C7
1.000 pF
Ct 0.01
=
15Vdc
VCE
5
20
60
40
IC,
80
100
COLLECTOR CURRENT
120
140
4- 1/2
turns. No.
L4
3- 1/2
mm. Mo. 22 win, 3/16" 1:0.
WATTS
iiF
FIGURE 4 - COLLECTOR-BASE TIME CONSTANT
FIGURE 3 - CURRENT-GAIN - BANDWIDTH PRODUCT
VCE
22 win. 3/16" U).
LI
L2.L3 0.12 vH RFC
R 1 240 OHMS. 2
=
15Vdc
20
20
160
(mAdc)
40
60
IC.
7-35
80
100
120
COLLECTOR CURRENT (mAdc)
140
160
2N5109
5 -
FIGURE
5.0
6- CAPACITANCES versus REVERSE VOLTAGE
FIGURE
SATURATION VOLTAGES
10
II"
3.0
7.0
2.0
VBEIsat)
°
S
—
0.5
'
/\
>
K Ceb
5.0
0,
\
CE
'
3.0
!
*^^c
2.0
j
b
0.)
j
0.05
1
20
IC,
60
30
70
COLLECTOR CURREN
200
100
[
300
500
n
0.1
0.2
0.5
0.3
0.7
1.0
7
- INPUT ADMITTANCE
versus
3.0
5.0
7.0
10
40
20
,
FIGURE
FIGURE
2.0
V R REVERSE VOLTAGE (VOLTS)
(mAdc)
FREQUENCY
versus
4U
8 - INPUT ADMITTANCE
COLLECTOR CURRENT
50
1
1
_V CE =15 Vdc
l
C = 50
Vce=
mAdc
f
30
Vdc
15
MHz
= 200
40
9ie
30
9ie
*>n
^
t>ie
10
k
^"-10
n
200
f.
FIGURE
9
FREQUENCY
700
1000
20
10
30
(MHzl
IC,
- REVERSE TRANSFER ADMITTANCE
versus
VCE
500
300
FIGURE
10
40
50
60
COLLECTOR CURRENT
70
80
90
100
(mAdc)
- REVERSE TRANSFER ADMITTANCE
versus
COLLECTOR CURRENT
FREQUENCY
=
vc E
50 mAdc
I
f
= 15
Vdc
= 20C
MHz
"
H
-bre
-bre
9re*0
"9te
200
300
f,
FREQUENCY
500
700
1000
10
(MHz)
20
30
IC,
7-36
40
50
60
70
COLLECTOR CURRENT (mAdc)
80
90
100
2N5109
FIGURE
-
11
FORWARD TRANSFER ADMITTANCE
versus
S
FIGURE
12
400
—
I
I
1
VrF
=
15Vdc
ir Adc
1
VCE
tC = 50
S
FORWARD TRANSFER ADMITTANCE versus
COLLECTOR CURRENT
-
FREQUENCY
f
= 15
= 200
MHz
-bfe
300
<
§
200
z
<
100
<
bfe
cc
o
en
9fe
<
.
cc
•S-100
300
200
I,
20
10
500
FREQUENCY
(MHz)
FIGURE 13 - OUTPUT ADMITTANCE
versus
40
30
IC.
50
FIGURE 14- OUTPUT ADMITTANCE
FREQUENCY
70
60
COLLECTOR CURRENT
80
90
100
(mAdc)
versus
COLLECTOR
CURRENT
20
1
I
1
:
vCe
=
ic =
5 Vdc
18
mAdc
f
!
|
,40
16
^
35
14
=
MHz
200
j
12
10
b
b ze
8.0
6.0
4.0
I
|
200
FIGURE
15
500
300
f,
-
FREQUENCY
2.0
a 3e
9oe
700
10
1000
20
(MHz)
150°
160°
170°
180°
190°
60
f
1
70
80
FREQUENCY
340°
200°
350°
330°
150°
210°
7-37
160°
90
100
COLLECTOR CURRENT (mAdc)
FIGURE 16 - OUTPUT REFLECTION COEFFICIENT
versus
FREQUENCY
350°
50
40
30
IC,
- INPUT REFLECTION COEFFICIENT
"
T-
II
170°
180°
190°
340°
200°
330°
210°
versus
2N5109
FrGURE 18- FORWARD TRANSMISSION COEFFICIENT
FIGURE 17 - REVERSE TRANSMISSION
COEFFICIENT versus FREQUENCY
150°
160°
170°
180°
FIGURE
190°
19 -
200°
versus
210°
30°
20°
10°
150°
160°
170°
FREQUENCY
180°
INPUT REFLECTION COEFFICIENT AND OUTPUT REFLECTION
COEFFICIENT versus FREQUENCY
7-38
350°
340"
190°
200°
330°
210°