2N5109 JAN, JTX, JTXV AVAILABLE CASE STYLE 79-02, 1 MAXIMUM RATINGS TO-39 (TO-205AD) Symbol Value Unit Collector-Emitter Voltage VCEO 20 Vdc Co Hector- Base Voltage VCBO 40 Vdc Emitter-Base Voltage v EBO 3.0 Vdc <B 400 mAdc "C 400 mAdc PD 2.5 Watt 20 mW/°C Rating HIGH FREQUENCY TRANSISTOR NPN SILICON Base Current Collector Current — Continuous Total Device Dissipation @ Tq = 75°C(1) Derate above 25°C Storage Temperature (1) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise -65 T stg Total Device Dissipation at T/\ = 25°C is to +200 °C Max Unit 1.0 Watt. noted.) Symbol Characteristic Min Typ | J OFF CHARACTERISTICS Breakdown Voltage(2) mAdc, RflE = 10 O) Collector-Emitter dC = 5.0 Collector-Emitter Sustaining Voltage Oc = 5.0 mAdc, = Ib = 15 Vdc, B = 40 — — Vdc v (BR)CEO 20 — — Vdc 'ceo — — 20 AiAdc - - 5.0 5.0 mAdc mAdc 100 /jAdc 0) Collector Cutoff Current (V CE V(BR)CER 0) l Collector Cutoff Current ICEX (Vce = 15 Vdc, Vbe = -1.5 V, Tq = 150°C) (V C e = 35 Vdc, V BE = -1.5 V) Emitter Cutoff Current (Vbe = 3.0 vdc, 'ebo = ic — — 5.0 - o) ON CHARACTERISTICS DC Current Gain hFE dC = 360 mAdc, V C e = 5.0 Vdc) dC = 50 mAdc, Vce = 15 Vdc) 40 120 SMALL SIGNAL CHARACTERISTICS Current-Gain flC — Bandwidth Product = 50 mAdc, Vce = 15 Vdc, f = 200 MHz) Collector-Base Capacitance (Vcb = 15 Vdc, Ie = 0, f = 1.0 FUNCTIONAL f — - MHz Ccb — 1.8 3.5 PF NF — 3.0 — dB G ve 11 - - dB _ 0.1 mW = 200 MHz) TEST. Common-Emitter Amplifier Voltage Gain dC = 50 mAdc, V C c = 15 Vdc, f = 50 (Figure to 1) 216 MHz) Power Input (Figure 2) dC = 50 mAdc, Vce = 15 Vdc, Rs = 50 ohms, Pout = 1 -26 mW, f = 200 MHz) (2) 1200 MHz) Noise Figure dC = 10 mAdc, Vce = 15 Vdc, h Pulsed thru a 25 mH Inductor; 50% Duty Pin Cycle. 7-34 2N5109 FIGURE 1 - RF AMPLIFIER FOR VOLTAGE GAIN TEST CIRCUIT Pin (Zg 75 !! CI.C2.C3.C5 C4 C6, C7 C8 0.002 „f 0.03„f I500pf 18 pF R3 R4 330!!, 1W 200S1. Tl 4 Turns 1/4W »30 Win wound on "Indiana General' »CF 102 Ql, or equivalent Bifilar Core FIGURE 2 - 200 MHz TEST CIRCUIT C1.C2.C3 1.0-30pF C4 1.0-20pF C5 10.000 pF C6. C7 1.000 pF Ct 0.01 = 15Vdc VCE 5 20 60 40 IC, 80 100 COLLECTOR CURRENT 120 140 4- 1/2 turns. No. L4 3- 1/2 mm. Mo. 22 win, 3/16" 1:0. WATTS iiF FIGURE 4 - COLLECTOR-BASE TIME CONSTANT FIGURE 3 - CURRENT-GAIN - BANDWIDTH PRODUCT VCE 22 win. 3/16" U). LI L2.L3 0.12 vH RFC R 1 240 OHMS. 2 = 15Vdc 20 20 160 (mAdc) 40 60 IC. 7-35 80 100 120 COLLECTOR CURRENT (mAdc) 140 160 2N5109 5 - FIGURE 5.0 6- CAPACITANCES versus REVERSE VOLTAGE FIGURE SATURATION VOLTAGES 10 II" 3.0 7.0 2.0 VBEIsat) ° S — 0.5 ' /\ > K Ceb 5.0 0, \ CE ' 3.0 ! *^^c 2.0 j b 0.) j 0.05 1 20 IC, 60 30 70 COLLECTOR CURREN 200 100 [ 300 500 n 0.1 0.2 0.5 0.3 0.7 1.0 7 - INPUT ADMITTANCE versus 3.0 5.0 7.0 10 40 20 , FIGURE FIGURE 2.0 V R REVERSE VOLTAGE (VOLTS) (mAdc) FREQUENCY versus 4U 8 - INPUT ADMITTANCE COLLECTOR CURRENT 50 1 1 _V CE =15 Vdc l C = 50 Vce= mAdc f 30 Vdc 15 MHz = 200 40 9ie 30 9ie *>n ^ t>ie 10 k ^"-10 n 200 f. FIGURE 9 FREQUENCY 700 1000 20 10 30 (MHzl IC, - REVERSE TRANSFER ADMITTANCE versus VCE 500 300 FIGURE 10 40 50 60 COLLECTOR CURRENT 70 80 90 100 (mAdc) - REVERSE TRANSFER ADMITTANCE versus COLLECTOR CURRENT FREQUENCY = vc E 50 mAdc I f = 15 Vdc = 20C MHz " H -bre -bre 9re*0 "9te 200 300 f, FREQUENCY 500 700 1000 10 (MHz) 20 30 IC, 7-36 40 50 60 70 COLLECTOR CURRENT (mAdc) 80 90 100 2N5109 FIGURE - 11 FORWARD TRANSFER ADMITTANCE versus S FIGURE 12 400 — I I 1 VrF = 15Vdc ir Adc 1 VCE tC = 50 S FORWARD TRANSFER ADMITTANCE versus COLLECTOR CURRENT - FREQUENCY f = 15 = 200 MHz -bfe 300 < § 200 z < 100 < bfe cc o en 9fe < . cc •S-100 300 200 I, 20 10 500 FREQUENCY (MHz) FIGURE 13 - OUTPUT ADMITTANCE versus 40 30 IC. 50 FIGURE 14- OUTPUT ADMITTANCE FREQUENCY 70 60 COLLECTOR CURRENT 80 90 100 (mAdc) versus COLLECTOR CURRENT 20 1 I 1 : vCe = ic = 5 Vdc 18 mAdc f ! | ,40 16 ^ 35 14 = MHz 200 j 12 10 b b ze 8.0 6.0 4.0 I | 200 FIGURE 15 500 300 f, - FREQUENCY 2.0 a 3e 9oe 700 10 1000 20 (MHz) 150° 160° 170° 180° 190° 60 f 1 70 80 FREQUENCY 340° 200° 350° 330° 150° 210° 7-37 160° 90 100 COLLECTOR CURRENT (mAdc) FIGURE 16 - OUTPUT REFLECTION COEFFICIENT versus FREQUENCY 350° 50 40 30 IC, - INPUT REFLECTION COEFFICIENT " T- II 170° 180° 190° 340° 200° 330° 210° versus 2N5109 FrGURE 18- FORWARD TRANSMISSION COEFFICIENT FIGURE 17 - REVERSE TRANSMISSION COEFFICIENT versus FREQUENCY 150° 160° 170° 180° FIGURE 190° 19 - 200° versus 210° 30° 20° 10° 150° 160° 170° FREQUENCY 180° INPUT REFLECTION COEFFICIENT AND OUTPUT REFLECTION COEFFICIENT versus FREQUENCY 7-38 350° 340" 190° 200° 330° 210°