Home Assignment- 1 / Due Date: 04.09.2023
TA to Collect the Solution Sheets / Plagiarism Cases will be handled as per NU norms
Q-1: Calculate the value of for gallium arsenide (GaAs) at T = 300 K. The constant B = 3.56 x
1014 cm–3K–3/2 and the bandgap voltage Eg = 1.42 eV. [10 marks]
Q-2: Find values of the intrinsic carrier concentration for silicon at −70° 𝐶, 0° 𝐶, 20° 𝐶, 100° 𝐶,
𝑎𝑛𝑑 125° 𝐶. At each temperature, what fraction of the atoms is ionized? Hint: a silicon crystal
has approximately 5x1022 atoms/cm3. [10 marks]
Q-3: In the circuit Fig. 1, diode is ideal with a cut-in voltage of 0.7 V.
a) Find the magnitude of current I2. [10 Marks]
b) If 2 KΩ arm is removed from the circuit, find the bias point for D1. [15 Marks]
Fig. 1
Fig. 2
Q-4: For the Fig. 2, diode is ideal.
a) Find the relation between Vo and Vi. Note that Vi can be both +ve and -ve. [15 Marks]
b) Which circuit you have studied so far mimics this circuit’s behavior. Is there any advantage
of this circuit in Fig. 2 over the other circuit that you have studied? [10 Marks]
Q-5: Express the output X at the output of diode circuit in Fig. 3 in terms inputs A, B, C, and D.
Give brief justification. [10 marks]
Fig. 3
Q-6: Find V1, V2 and ID in the circuit given in Fig. 4. Assume CVDM of the diodes. [10 marks]
Fig. 4
Q-7: Find I2 and V2 in Fig. 5. Assume CVDM of diodes. [10 marks]
Fig. 5