EPE 2009, Barcelona
Keynote Speech
Advanced IGBT technologies for HF operation
Gourab Majumdar
Mitsubishi Electric Corporation
Contents:
1) Power module evolution and application
2) Resonant power conversion of IGBT modules
3) Future trends of Power Module technologies
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Power module applications
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Evolution
Evolution of
of Power
Power Module
Module
Simplifying User’s
assembly work
Discrete Power
Maximizing
IGBT’s inherent ability
Improving system’s
performance
IGBT Module
Drive supply and
system level functions
(micro-computer)
Power Chips
(IGBT, Diode)
IPM
Integrated
Drive/Protection
Functions
(HVIC, ASIC)
Integrated power circuit
with appropriate isolation
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Integrated self intelligence
(driving, protection and
diagnostic)
Integrated
system-like
solution
Integrated system level
intelligence (protection,
control and status/data
communication )
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Application
Application of
of Power
Power Devices
Devices
Heavy PE Systems
Traction PE
Output Capacity of PE System (VA)
100M
New Energy
Renewable Energy
10M
Power Transmission
Industrial Equipment
Power Supplies
Medical Equipment
Si
GTO
GCT
1M
Large Drive
Traction
IPM
IGBT Module
10OK
Automotive
Inverter
HF Power Supply
Thyristor
10K
Bipolar
Transistor
Module
1K
PE in Automotive
Discrete
IGBT
Consumer
Electronics
Power Supply
Communication
100
MOSFET
Triac
10
10
100
1K
10K
10OK
Operation Frequency (Hz)
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1M
4
Power device performance improvement
For hard-switched inverter applications
‘80
‘85
High hfe
Bipolar Tr
‘90
1st Gen
’95
3rd Gen
2nd Gen
‘00
4th Gen
Power losses
Operational
power loss in
inverter circuit
Transistor
turn-off loss
‘05
‘08
5th Gen
6th Gen
Drastic reduction
100％ of power losses
Transistor
on-state loss
Transistor
turn-on loss
1st Gen.
Bipolar
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3rd Gen.
Planar IGBT
5th Gen.
6th Gen.
Trench IGBT、CSTBTTM
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Resonant power conversion application
of High Frequency IGBT Modules
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Basic resonant application
(1) Circuit topology: Current resonant inverter
AC/DC
Converter
Full Bridge
Inverter
Primary Secondary
Load
Load
C
L
Rectification
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Power Conversion for Welding
Basic circuit topology
P side
N side
Current pulse train through IGBT
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Power conversion for Medical equipment
(Application : High Voltage source for X-ray, CT etc.)
Current waveforms
Basic circuit topology
＋
P side IGBT
N side IGBT
P side IGBT
－
＋
－
N side IGBT
・ Current resonant circuit
・ Output power is controlled by changing switching
sequence of each IGBT
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Basic resonant application
(2) Operation modes and power loss factors
Welding
Welding
Current
Current
resonant
resonant
inverter
inverter
Mode
ModeAA
gate
P side
N side
>>Without
Collector P side
Withoutturn-on
turn-onloss
loss
>>With
current N side
Withturn-off
turn-offloss
loss
>>Without
WithoutFWD
FWDrecovery
recoveryloss
loss
Medical
Medical
Mode
Mode BB
>>With
Withturn-on
turn-onloss
loss
>>Without
Withoutturn-off
turn-offloss
loss
>>With
WithFwd
Fwdrecovery
recoveryloss
loss
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gate
P side
N side
Collector P side
current N side
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Basic resonant application
(3) Closer look at IGBT/FWD waveforms
FWD IGBT
IGBT
FWD
FWD
FWD
recovery
IGBT turn-off
Current (i)
Current (i)
Voltage (v)
Voltage (v)
(a)
(c)
i x v (IGBT)
IGBT
(e)
(a)
i x v (IGBT)
(b)
i x v (FWD)
i x v (FWD)
Operation Mode A
Welding
Welding
(b)
Operation Mode B
(d)
Medical
Medical
Power loss components:
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(a) IGBT on-state loss (b) FWD on-state loss (c) IGBT turn-off loss
(d) FWD reverse recovery loss (e) IGBT forward recovery loss
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Basic resonant application
(3) IGBT/FWD waveforms and loss factors (Mode A)
IGBT switching waveforms related to power dissipation
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Basic resonant application
(3) IGBT/FWD waveforms and loss factors (Mode B)
GATE (P-side)
GATE (N-side)
IGBT turn-on
Vce (P-side IGBT)
DIODE recovery
Ic (P-side IGBT)
P1
P2
P3
P4
P1： IGBT forward recovery loss
P2： IGBT on-state loss
P3： FWD on-state loss
Power dissipation
= P1+P2+P3+P4
P4： FWD reverse recovery loss
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Basic resonant application
(4) Distribution of different device operating losses
(c) IGBT turn-off loss
(b) FWD steady-state loss
(a) IGBT steady-state loss
Operating
power loss
発生損失
Operating
power
loss
発生損
失
(typical @ 50kHz switching)
(e) Etfr: IGBT forward recovery loss
(e) Err: FWD forward
recovery loss
(b) FWD steady-state loss
(a) IGBT steady-state loss
Mode A Operation
Mode B Operation
Welding
Welding
Medical
Medical
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Basic resonant application
(4) Higher frequency trend
# Free Resonance
# Mode B
# Mode A
・IGBT turn-OFF
Low Freq.
(20～40kHz）
・IGBT turn-ON
・Recovery
Diode recovery
only
High Freq.
(40～80kHz)
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＊Welding Appl. A
Added
Transistor
recovery
＊Med. Appl. A
＊Med. Appl. B
＊Med. Appl. C
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Basic resonant application
(5) Recovery losses of IGBT & FWD
Recovery losses (@resonance) = Edrr + Etfr
FWD Reverse Recovery (Edrr)
Typical case waveforms
IGBT Forward
Recovery (25uC)
FWD Reverse
Recovery (17uC)
6mJ
@hard switching
13mJ
IGBT Forward Recovery (Etfr)
Etfr
7mJ
Edrr
3us
3us
dvdt
@dvdt delay circuit
@1200V/150A IGBT operating at 150A/125degC
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State-of-the-art
High frequency IGBT Module series
5th Gen power chip
technology
(CSTBT/FWD)
Internal design of an
NFM series package
Low package inductance
High frequency IGBTs of NFM series using 5th Gen CSTBT technology
are optimized to provide the highest level of performance in current
resonant HF applications using 10-60kHz operating frequency.
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Frequency characteristics of state-of-the-art
IGBT modules
Total power loss based comparison (IGBT+DIODE)
1200V/150A Duals
Mode A
Welding
Welding
1000
Mode B
Switching cycle
Medical
Medical
TTL(A)
1000
100
TTL(B)
NFH
NFM
Comp A
NF
Power Loss [W]
NFH
NFM
Comp A
NF
Power Loss [W]
Switching cycle
100
1
10
frequency [kHz]
NF
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NFM
100
NFH
1
10
frequency [kHz]
NF
NFM
In the 10 to 60kHz range NFM series using 5th Gen CSTBT/FWD
technology exhibit the lowest power loss performance
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100
Future Trends of
Power Module Technologies
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IGBT
IGBT FOM
FOM Improvement
Improvement
FOM ratio [referenced to 1st gen.]
14
1200V IGBT
CSTBT structure
Thin wafer process
12
4th gen.
10
6th gen.
5th gen.
(with RTC)
Trench structure
8
6
4
Figure Of Merit (FOM) = Jc / {v
{vce(sat)
ce(sat) × eoff}
Fine pattern
process
2
0
1985
3rd gen.
2nd gen.
1st gen.
1990
1995
where,
Jc = device’s rated current density. ［A/㎝2 ］
vce(sat) = saturation voltage drop at rated current
density conduction with Tj at 400K. [V]
eoff = turn-off switching energy per pulse of
operation at rated current density and
Tj at 400K. [mj/pulse/A]
2000
2005
2010
Year
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Advancement
Advancement of
of CSTBT
CSTBT device
device structure
structure
1200V design
5th Gen CSTBTTM
5th Gen CSTBTTM (Ⅱ)
6th Gen CSTBTTM
Emitter electrode
N emitter
High Tj capability
P base
Dummy trench
Trench gate
N+ carrier storing layer
p層
nE層
CS層
Poly-Si
N- drift layer
N+ buffer layer
P+ thin collector
Thickness = 170 um
First CSTBTTM concept
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n－層
Thickness = 130 um
Optimized
vertical thickness
ゲート
Narrower cell pitch for
higher cell density
Retro-graded doping for
optimizing CS layer
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th
Characteristics
of
6
Characteristics of 6th Gen
Gen IGBT
IGBT chip
chip
VCE(sat) vs. Eoff Trade-off Improvement
25
( 150A/1200V)
Mitsubishi
6th Gen
Eoff [mJ/pulse]
20
5th Gen
15
10
0.35V
5
Tj = 125˚C
IC = 150A
0
1.0
1.5
2.0
2.5
3.0
VCE(sat) [V]
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th
Characteristics
of
6
Characteristics of 6th Gen
Gen FW
FW Diode
Diode Chip
Chip
VF vs. Qrr Trade-off Improvement
5th Gen
6th Gen
Anode
45
P+ anode layer
N- drift layer
40
Qrr [μC/pulse]
35
≒120um
≒ 250um
30
N+ cathode
layer
25
Thin LPT structure
5th Gen
20
Cathode
6th
15
Gen
10
Trade-off improvement by employing thin- LPT
vertical profile concept
5
0
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
VF [V]
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66thth Gen
Gen IGBT
IGBT Module
Module series
series using
using new
new chip
chip technologies
technologies
1.20
FOM of IGBT (1200V)
better 1.40
FOM of FWD (1200V)
1.33
1.31
30% up
1.00
1.00
0.80
5th
6th
generation generation
FOM = JC(sat) / (vCE(sat) x eOFF)
The relative FOM
[to conventional diode]
The relative FOM
[to 5th generation IGBT]
better 1.40
1.20
30% up
1.00
1.00
0.80
conventinal
diode
new diode
FOM = JF(sat) / (vF x erec)
Evolvement of advanced IGBT Modules
5th Gen NFA series Æ 6th Gen
5th Gen Nx series Æ 6th Gen
Superior performance
(New Gen chip technology)
☆ Lower loss, higher operational Tj
☆ Lower EMII
MPD Series Æ New MPDs
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☆ Retaining packaging compatibility
☆ Line up extended higher current range
by structural advancement
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Evolvement
Evolvement of
of Power
Power Module
Module Technologies
Technologies
Power chip technologies
Æ5th Gen IGBT/FWD Æ6th Gen IGBT/FWD ÆNext Gen Devices
600～6500V
600～6500V
Improving FOM/ Higher Tj/ Improving ruggedness
Integrating peripheral functions
Advancement of HVIC and LV-ASIC
Refining process (0.8um Æ 0.5um Æ 0.2 um), use of SOI technology
Integrating memory function (ROM, Flash)
New trimming/sensing technologies Æ Higher functionality
Smarter, robust and standardize housings
Advancing transfer-molded and case-type packaging
solutions for higher power density and higher reliability
Solder-less terminal Better thermal conductivity
Higher integration level
Higher operating temperature
Newer bonding technologies
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Thank you for your kind attention !
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