http://www.fujielectric.com/products/semiconductor/
1MBI400VF-120-50
IGBT Modules
IGBT MODULE (V series)
1200V / 400A / 1 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC =25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power dissipation
Junction temperature
Operating junction temperature
(under switching conditions)
Case temperature
Storage temperature
Isolation voltage Between terminal and copper base (*1)
Mounting (*2)
Screw torque
Terminals (*3)
Symbols
VCES
VGES
Conditions
IC
Continuous
IC pulse
-IC
-IC pulse
PC
Tj
1ms
1ms
1 device
TC =100°C
TC =25°C
Maximum ratings
1200
±20
400
480
800
400
800
3330
175
Tjop
150
TC
Tstg
Viso
M4
M6
125
-40~+125
2500
6.0
2.0
5.0
AC : 1min.
Units
V
V
A
W
°C
VAC
Nm
Note *1: All terminals should be connected together during the test.
Note *2: Recommendable Value : 1.96-6.0 Nm (M5, M6)
Grease type : Shin-Etsu Chemical Co.,Ltd "G-747"
Note *3: Recommendable Value : 0.98-2.0 Nm (M4)
Recommendable Value : 1.96-5.0 Nm (M6)
1
8003
SEPTEMBER 2014
1MBI400VF-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj = 25°C unless otherwise specified)
Items
Symbols
Conditions
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
ICES
IGES
VGE (th)
VGE = 0V, VCE = 1200V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 400mA
VCE (sat)
(terminal)
Collector-Emitter saturation voltage
VCE (sat)
(chip)
Internal gate resistance
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
RG(int)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
VGE = 15V
IC = 400A
Tj =25°C
Tj =125°C
Tj =150°C
Tj =25°C
Tj =125°C
Tj =150°C
VGE = 0V, VCE = 10V, f = 1MHz
VCC = 600V, IC = 400A
VGE = ±15V, RG = 1.8Ω
Tj =150°C, LS =35nH
VGE = 0V
IF = 400A
IF = 400A
Tj =25°C
Tj =125°C
Tj =150°C
Tj =25°C
Tj =125°C
Tj =150°C
Characteristics
min.
typ.
max.
4.0
400
6.0
6.5
7.0
1.95
2.40
2.25
2.30
1.75
2.15
2.05
2.10
1.9
36
600
200
80
1000
140
1.85
2.35
2.00
1.95
1.70
2.15
1.85
1.80
200
-
Units
mA
nA
V
V
Ω
nF
nsec
V
nsec
Thermal resistance characteristics
Items
Symbols
Thermal resistance (1device)
Rth(j-c)
Contact thermal resistance (1device) (*4)
Rth(c-f)
Conditions
IGBT
FWD
with Thermal Compound
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
2
Characteristics
min.
typ.
max.
0.045
0.077
0.0125
-
Units
°C/W
1MBI400VF-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
1000
1000
VGE=20V
15V
VGE= 20V
12V
800
Collector current: IC [A]
600
10V
400
200
12V
600
10V
400
200
8V
8V
0
0
1
2
3
4
0
5
0
1
Collector-Emitter voltage: VCE [V]
Tj=25 ˚C
125˚C 150˚C
Collector-Emitter Voltage: VCE [V]
Collector Current: IC [A]
5
10
800
600
400
200
8
6
4
0
0
1
2
3
Collector-Emitter Voltage: VCE [V]
IC=800A
IC=400A
IC=200A
2
4
5
10
15
20
25
Gate-Emitter Voltage: VGE [V]
Gate Capacitance vs. Collector-Emitter Voltage
VGE= 0V, ƒ= 1MHz, Tj= 25°C
Dynamic Gate Charge (typ.)
VCC=600V, IC=400A, Tj= 25°C
20
100
800
Gate-Emitter voltage: VGE [V]
15
Cies
10
***
Gate Capacitance: Cies, Coes, Cres [nF]
4
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C / chip
1000
Cres
Coes
1
3
Collector-Emitter voltage: VCE [V]
Collector current vs. Collector-Emitter voltage (typ.)
VGE= 15V / chip
0
2
0
5
10
10
20
25
30
400
5
200
0
0
-5
-200
VGE
VGE
-10
-400
-15
-20
15
600
VCE
-600
-4
-2
0
2
Gate charge: Qg [μC]
Collector-Emitter voltage: VCE [V]
3
4
-800
Collector-Emitter voltage: VCE [V]
Collector current: IC [A]
800
15V
1MBI400VF-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching time vs. Collector current (typ.)
VCC=600V, VGE=±15V, RG=1.8Ω, Tj=125°C
Switching time vs. Collector current (typ.)
VCC=600V, VGE=±15V, RG=1.8Ω, Tj=150°C
10000
Switching time: ton, tr, toff, tf [nsec]
Switching time: ton, tr, toff, tf [nsec]
10000
toff
1000
ton
tr
tf
100
10
0
200
400
600
800
1000
toff
1000
ton
tr
tf
100
10
0
200
Collector current: IC [A]
100
Switching loss: Eon, Eoff, Err [mJ/pulse]
Switching time: ton, tr, toff, tf [nsec]
800
toff
ton
tr
1000
100
tf
1
10
100
Eoff
Tj=125 oC
Tj=150 oC
80
Eon
60
Err
40
20
0
0
200
400
600
800
1000
Collector current: IC [A]
Gate resistance: RG [Ω]
Reverse bias safe operating area (max.)
VGE=±15V, RG=1.8Ω, Tj=150°C, Ls=35nH
Switching loss vs. Gate resistance (typ.)
VCC=600V, IC=400A, VGE=±15V, Tj=125°C
150
1000
Switching loss vs. Collector current (typ.)
VCC=600V, VGE=±15V, RG=1.8Ω, Tj=125°C
10000
1000
Tj=125 oC
Tj=150 oC
Eon
800
Collector current: IC [A]
Switching loss: Eon, Eoff, Err [mJ/pulse]
600
Collector current: IC [A]
Switching time vs. Gate resistance (typ.)
VCC=600V, IC=400A, VGE=±15V, Tj=125°C
10
400
100
Eoff
50
600
400
200
Err
0
1
10
0
100
Gate resistance: RG [Ω]
4
0
400
800
1200
1600
Collector-Emitter voltage: VCE [V]
(Main terminals)
1MBI400VF-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Forward Current vs. Forward Voltage (typ.)
chip
Reverse Recovery Characteristics (typ.)
VCC=600V, VGE=±15V, RG=1.8Ω, Tj=125°C
1000
10000
Forward current: IF [A]
Reverse recovery current: Irr [A]
Reverse recovery time: trr [nsec]
Tj=25 ˚C
800
600
400
125˚C
200
0
150˚C
0
1
2
1000
Irr
trr
100
10
3
0
200
400
Reverse Recovery Characteristics (typ.)
VCC=600V, VGE=±15V, RG=1.8Ω, Tj=150°C
1
Thermal resistance: Rth(j-c) [˚C/W] ***
Reverse recovery current: Irr [A]
Reverse recovery time: trr [nsec]
1000
Irr
trr
100
400
600
800
1000
Forward current: IF [A]
Reverse recovery current: Irr [A]
1000
800
Pmax=400kW
400
200
0
0
500
1000
Collector-Emitter voltage: VCE [V]
(Main terminals)
n 1
rn
1 e
n
FWD
0.1
IGBT
0.01
n
n
0.001
0.001
rn
[°C/W]
[sec]
IGBT
FWD
0.01
1
2
3
4
0.0009 0.0178 0.0541 0.0557
0.00412 0.00954 0.02073 0.01062
0.00705 0.01632 0.03546 0.01817
0.1
Pulse Width : PW [sec]
FWD safe operating area (max.)
Tj=150°C
600
t
4
Zth
200
1000
Transient Thermal Resistance (max.)
10000
0
800
Forward current: IF [A]
Forward on voltage: VF [V]
10
600
1500
5
1
1MBI400VF-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Outline Drawings(Unit:mm)
Equivalent Circuit
6
1MBI400VF-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
WARNING
1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of September 2014.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specifications.
2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual property rights which may arise from the use of the applications described herein.
3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become
faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, flame retardant, and free of malfunction.
4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.
• Computers
• OA equipment
• Communications equipment (terminal devices)
• Measurement equipment
• Machine tools
• Audiovisual equipment • Electrical home appliances
• Personal equipment • Industrial robots etc.
5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,
it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment
becomes faulty.
• Transportation equipment (mounted on cars and ships)
• Trunk communications equipment
• Traffic-signal control equipment
• Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices
• Safety devices
• Medical equipment
6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment
(without limitation).
• Space equipment
• Aeronautic equipment
• Nuclear control equipment
• Submarine repeater equipment
7.Copyright ©1996-2014 by Fuji Electric Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.
8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions
set forth herein.
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