VEMD5510C
www.vishay.com
Vishay Semiconductors
Ambient Light Sensor
FEATURES
• Package type: surface-mount
• Package form: top view
• Dimensions (L x W x H in mm): 5 x 4 x 0.9
• Radiant sensitive area (in mm2): 7.5
• High photo sensitivity
• Suppression filter for near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 65°
• Floor life: 72 h, MSL 4, according to
J-STD-020
DESCRIPTION
VEMD5510C is a high speed and high sensitive PIN
photodiode. It is a low profile surface-mount device (SMD)
including the chip with a 7.5 mm2 sensitive area detecting
visible light much like the human eye. The diode has its
peak sensitivity at 550 nm and a low capacitance.
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Wearables
• Optical heart rate monitoring
• Ambient light sensors
PRODUCT SUMMARY
COMPONENT
VEMD5510C
Ira (μA)
ϕ (°)
λ0.5 (nm)
0.6
± 65
440 to 700
PACKAGE FORM
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
VEMD5510C
Tape and reel
MOQ: 1000 pcs, 1000 pcs/reel
Top view
VEMD5510C-GS15
Tape and reel
MOQ: 5000 pcs, 5000 pcs/reel
Top view
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Power dissipation
Tamb ≤ 25 °C
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
According to reflow solder profile Fig. 8
Thermal resistance junction-to-ambient
ESD safety HBM
± 2000 V, 1.5 kΩ, 100 pF, 3 pulses
SYMBOL
VALUE
VR
20
UNIT
V
PV
215
mW
Tj
110
°C
Tamb
-40 to +100
°C
Tstg
-40 to +100
°C
Tsd
260
°C
RthJA
350
K/W
ESDHBM
≥2
kV
Document Number: 84354
1
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 1.2, 30-Nov-2021
VEMD5510C
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 50 mA
VF
-
0.9
1.3
V
IR = 100 μA, E = 0
V(BR)
20
-
-
V
VR = 10 V, E = 0
Iro
-
0.2
10
nA
VR = 0 V, f = 1 MHz, E = 0
CD
-
80
-
pF
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
VR = 3 V, f = 1 MHz, E = 0
CD
-
30
40
pF
EV = 100 lx, CIE illuminant A
Vo
-
240
-
mV
Temperature coefficient of Vo
EV = 100 lx, CIE illuminant A
TKVo
-
-2.5
-
mV/K
Short circuit current
EV = 100 lx, CIE illuminant A
Ik
-
0.6
-
μA
Ee = 0.2 mW/cm2, λ = 525 nm, VR = 5 V
Ira
2.0
2.6
-
μA
EV = 100 lx, CIE illuminant A, VR = 5 V
μA
Open circuit voltage
Reverse light current
Ira
0.46
0.55
-
Angle of half sensitivity
ϕ
-
± 65
-
°
Wavelength of peak sensitivity
λp
-
550
-
nm
λ0.5
-
440 to 700
-
nm
Rise time
VR = 5 V, RL = 50 Ω, λ = 525 nm
tr
-
40
-
ns
Fall time
VR = 5 V, RL = 50 Ω, λ = 525 nm
tf
-
30
-
ns
Range of spectral bandwidth
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Basic characteristics graphs to be extended to 110 °C ambient temperatures where applicable.
10
Ira - Reverse Light Current (μA)
Iro - Reverse Dark Current (nA)
1000
VR = 10 V
100
10
1
0.1
VR = 5 V, CIE illuminant A
1
0.1
0.01
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
10
100
1000
EV - Illuminance (lx)
Fig. 2 - Reverse Light Current vs. Irradiance
Document Number: 84354
2
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 1.2, 30-Nov-2021
VEMD5510C
www.vishay.com
1000 lx
500 lx
250 lx
1
100 lx
50 lx
25 lx
0.1
10 lx
EV (lx), CIE illuminant A
0.01
0
2
4
6
8
10
12
100
90
80
70
60
50
40
30
20
10
0
400
500
600
700
800
λ - Wavelength (nm)
VR - Reverse Voltage (V)
Fig. 3 - Reverse Light Current vs. Reverse Voltage
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
0°
90
20°
30°
Srpel - Relative Sensitivity
Cp - Capacitance (pF)
10°
f = 1 MHz, E = 0
80
70
60
50
40
30
20
10
0
0.001
900 1000 1100
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
Ira - Reverse Light Current (μA)
10
S(λ)rel - Relative Spectral Sensitivity (%)
Vishay Semiconductors
80°
0.01
0.1
1
10
0.6
0.4
0.2
0
VR - Reverse Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Fig. 6 - Relative Sensitivity vs. Angular Displacement
Document Number: 84354
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For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 1.2, 30-Nov-2021
VEMD5510C
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
Bottom view
4
2.1
1.8
3
5
1.8
Optical
window
Detail X ( 20 : 1 )
Optical
center
3
0.9 ± 0.1
0.2
0.1
Top view
Tie bar, electrically connected to cathode
Detail X
2
Recommended footprint
0.65
1.2
4.1
Cathode
1
0.6
0.9
1.2
0.8
1
5.2
2.5
Exposed pad
(cathode)
0.4 (4 x)
3.1
NC
1
0.8
Center of device
0.8
2
Anode
0.6 (4 x)
Drawing- No.: 6.550-5329.01-4
Issue: 5; 23.09.2020
Not indicated tolerances ± 0.1
Technical drawings
according to DIN
specification
Document Number: 84354
4
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 1.2, 30-Nov-2021
VEMD5510C
www.vishay.com
Vishay Semiconductors
TAPE AND REEL DIMENSIONS in millimeters
Reel design is reperesentative for different types
Unreel direction
X
Label posted here
Ø 1.55
B-B (2:1)
0.3
B
Ø 1.5
8
2
X
Anode
1.75
B
Drawing-No.: 9.800-5129.01-4;
Issue: 2; 23.09.2020
1.42
5.5
Document Number: 84354
5
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 1.2, 30-Nov-2021
VEMD5510C
www.vishay.com
Vishay Semiconductors
SOLDER PROFILE
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
Axis Title
10000
300
Max. 260 °C
255 °C
240 °C
217 °C
245 °C
FLOOR LIFE
1000
200
Max. 30 s
1st line
2nd line
2nd line
Temperature (°C)
250
150
Max. 120 s
100
Max. 100 s
Max. ramp down 6 °C/s
100
Time between soldering and removing from MBB must not
exceed the time indicated in J-STD-020:
Moisture sensitivity: level 4
Floor life: 72 h
Conditions: Tamb < 30 °C, RH < 60 %
Max. ramp up 3 °C/s
50
DRYING
10
0
0
50
100
150
200
250
300
Time (s)
19841
Fig. 7 - Lead (Pb)-free Reflow Solder Profile
According to J-STD-020D
In case of moisture absorption devices should be
baked before soldering. Conditions see J-STD-020 or
recommended conditions:
192 h at 40 °C (+ 5 °C), RH < 5 %
or
96 h at 60 °C (+ 5 °C), RH < 5 %
Document Number: 84354
6
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 1.2, 30-Nov-2021
Legal Disclaimer Notice
www.vishay.com
Vishay
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Revision: 01-Jan-2022
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Document Number: 91000