PD - 94831
IRLZ44NPbF
HEXFET® Power MOSFET
Logic-Level Gate Drive
Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
l
D
l
VDSS = 55V
RDS(on) = 0.022Ω
G
ID = 47A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
47
33
160
110
0.71
±16
210
25
11
5.0
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
Typ.
Max.
Units
––––
––––
––––
––––
0.50
––––
1.4
––––
62
°C/W
11/11/03
IRLZ44NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
IGSS
Min.
55
–––
–––
–––
–––
1.0
21
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.070
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
84
26
15
Max. Units
Conditions
–––
V
V GS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.022
V GS = 10V, ID = 25A „
0.025
Ω
V GS = 5.0V, ID = 25A „
0.035
V GS = 4.0V, ID = 21A „
2.0
V
V DS = V GS, ID = 250µA
–––
S
V DS = 25V, ID = 25A
25
V DS = 55V, VGS = 0V
µA
250
V DS = 44V, VGS = 0V, TJ = 150°C
100
V GS = 16V
nA
-100
V GS = -16V
48
ID = 25A
8.6
nC V DS = 44V
25
V GS = 5.0V, See Fig. 6 and 13 „
–––
V DD = 28V
–––
ID = 25A
ns
–––
RG = 3.4Ω, VGS = 5.0V
–––
RD = 1.1Ω, See Fig. 10 „
Between lead,
––– 4.5 –––
6mm (0.25in.)
nH
from package
––– 7.5 –––
and center of die contact
––– 1700 –––
V GS = 0V
––– 400 –––
pF
V DS = 25V
––– 150 –––
ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
IS
I SM
VSD
t rr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 470µH
RG = 25Ω, IAS = 25A. (See Figure 12)
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– –––
47
showing the
A
G
integral reverse
––– ––– 160
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 25A, VGS = 0V „
––– 80 120
ns
TJ = 25°C, IF = 25A
––– 210 320
nC
di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ƒ ISD ≤ 25A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
D
S
IRLZ44NPbF
1000
1000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
100
10
2.5V
20µs PULSE WIDTH
T J = 25°C
1
0.1
1
10
100
10
3.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25°C
100
TJ = 175°C
10
V DS= 25V
20µs PULSE WIDTH
4.0
5.0
6.0
7.0
8.0
1
10
A
100
Fig 2. Typical Output Characteristics
1000
3.0
20µs PULSE WIDTH
T J = 175°C
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
2.5V
1
0.1
A
100
VDS , Drain-to-Source Voltage (V)
2.0
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
TOP
9.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
A
I D = 41A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20
0
20
40
60
A
80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRLZ44NPbF
2400
C, Capacitance (pF)
Ciss
15
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = Cds + C gd
VGS , Gate-to-Source Voltage (V)
2800
2000
1600
Coss
1200
800
Crss
400
0
1
10
100
I D = 25A
V DS = 44V
V DS = 28V
12
9
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
VDS , Drain-to-Source Voltage (V)
20
30
40
50
60
70
A
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
10
100
TJ = 175°C
TJ = 25°C
VGS = 0V
10
0.4
0.8
1.2
1.6
2.0
A
2.4
100
10µs
100µs
10
1ms
TC = 25°C
TJ = 175°C
Single Pulse
1
1
10ms
10
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
A
100
IRLZ44NPbF
50
RD
V DS
VGS
ID , Drain Current (A)
40
D.U.T.
RG
30
+
-VDD
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
0.01
0.00001
PDM
0.05
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.1
L
VDS
D.U.T.
RG
+
V
- DD
IAS
5.0 V
tp
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
EAS , Single Pulse Avalanche Energy (mJ)
IRLZ44NPbF
500
TOP
BOTTOM
400
300
200
100
0
VDD = 25V
25
tp
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
VDD
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
VDS
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
5.0 V
QGS
ID
10A
17A
25A
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
A
175
IRLZ44NPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

RG
•
•
•
•
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
ISD
*
IRLZ44NPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
-B-
3.78 (.149)
3.54 (.139)
4.69 (.185)
4.20 (.165)
-A-
1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
1
2
3
4- DRAIN
14.09 (.555)
13.47 (.530)
4- COLLECTOR
4.06 (.160)
3.55 (.140)
3X
3X
LEAD ASSIGNMENTS
IGBTs, CoPACK
1 - GATE
2 - DRAIN
1- GATE
1- GATE
3 - SOURCE 2- COLLECTOR
2- DRAIN
3- SOURCE
3- EMITTER
4 - DRAIN
HEXFET
1.40 (.055)
1.15 (.045)
0.93 (.037)
0.69 (.027)
0.36 (.014)
3X
M
B A M
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMPL E : T HIS IS AN IR F 1010
LOT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB L Y LINE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
INT E R NAT IONAL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
PAR T NU MB E R
DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/03
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
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contain dangerous substances. For information on
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representatives
of
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Technologies, Infineon Technologies’ products may
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injury.