IGBT - Field Stop, Trench
650 V, 40 A
FGH40T65SHD
Description
Using novel field stop IGBT technology, ON Semiconductor’s new
series of field stop 3rd generation IGBTs offer the optimum
performance for solar inverter, UPS, welder, telecom, ESS and PFC
applications where low conduction and switching losses are essential.
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Features
•
•
•
•
•
•
•
•
•
Maximum Junction Temperature: TJ =175°C
Positive Temperature Co−efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(sat) = 1.6 V(Typ.) @ IC = 40 A
100% of the Parts Tested for ILM (Note 1)
High Input Impedance
Fast Switching
Tighten Parameter Distribution
This Device is Pb−Free and is RoHS Compliant
E
Applications
C
G
TO−247−3LD
CASE 340CH
• Solar Inverter, UPS, Welder, Telecom, ESS, PFC
MARKING DIAGRAMS
$Y&Z&3&K
FGH40T65
SHD
$Y
&Z
&3
&K
FGH40T65SHD
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
April, 2020 − Rev. 3
1
Publication Order Number:
FGH40T65SHD/D
FGH40T65SHD
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
Symbol
FGH40T65SHD−F155
Unit
Collector to Emitter Voltage
VCES
650
V
Gate to Emitter Voltage
VGES
±20
V
±30
V
80
A
40
A
ILM
120
A
ICM
120
A
IF
40
A
20
A
Parameter
Transient Gate to Emitter Voltage
Collector Current
TC = 25°C
Collector Current
TC = 100°C
Pulsed Collector Current (Note 1)
TC = 25°C
IC
Pulsed Collector Current (Note 2)
Diode Forward Current
TC = 25°C
Diode Forward Current
TC = 100°C
Pulsed Diode Maximum Forward Current (Note 2)
Maximum Power Dissipation
TC = 25°C
Maximum Power Dissipation
TC = 100°C
IFM
120
A
PD
268
W
134
W
Operating Junction Temperature
TJ
−55 to +175
°C
Storage Temperature Range
Tstg
−55 to +175
°C
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
TL
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. VCC = 400 V, VGE = 15 V, IC = 120 A, RG = 30 , Inductive Load
2. Repetitive Rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Characteristic
Symbol
FGH40T65SHD−F155
Unit
Thermal Resistance, Junction to Case, Max. (IGBT)
RJC
0.56
°C/W
Thermal Resistance, Junction to Case, Max. (Diode)
RJC
1.71
°C/W
Thermal Resistance, Junction to Ambient, Max.
RJA
40
°C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FGH40T65SHD−F155
FGH40T65SHD
TO−247−3
Tube
−
−
30
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
−
−
Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage
BVCES
Temperature Coefficient of Breakdown
Voltage
BVCES/TJ
VGE = 0 V, IC = 1 mA
650
IC = 1 mA, Reference to 25°C
0.6
V
V/°C
Collector Cut−Off Current
ICES
VCE = VCES, VGE = 0 V
−
−
250
A
G−E Leakage Current
IGES
VGE = VGES, VCE = 0 V
−
−
±400
nA
G−E Threshold Voltage
VGE(th)
IC = 40 mA, VCE = VGE
4.0
5.5
7.5
V
Collector to Emitter Saturation Voltage
VCE(sat)
IC = 40 A, VGE = 15 V
−
1.6
2.1
V
IC = 40 A, VGE = 15 V, TC = 175°C
−
2.14
−
V
ON CHARACTERISTICS
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2
FGH40T65SHD
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
−
1995
−
pF
DYNAMIC CHARACTERISTICS
VCE = 30 V, VGE = 0 V, f = 1 MHz
Input Capacitance
Cies
Output Capacitance
Coes
−
70
−
pF
Reverse Transfer Capacitance
Cres
−
23
−
pF
−
19.2
−
ns
−
34.4
−
ns
td(off)
−
65.6
−
ns
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
td(on)
tr
Turn−Off Delay Time
Fall Time
VCC = 400 V, IC = 40 A,
RG = 6 VGE = 15 V,
Inductive Load, TC = 25°C
tf
−
9.6
−
ns
Turn−On Switching Loss
Eon
−
1010
−
J
Turn−Off Switching Loss
Eoff
−
297
−
J
Total Switching Loss
Ets
−
1307
−
J
Turn−On Delay Time
td(on)
−
18.4
−
ns
−
32.8
−
ns
td(off)
−
71.2
−
ns
tf
−
14.4
−
ns
Turn−On Switching Loss
Eon
−
1390
−
J
Turn−Off Switching Loss
Eoff
−
541
−
J
Total Switching Loss
Ets
−
1931
−
J
Total Gate Charge
Qg
−
72.2
−
nC
Gate to Emitter Charge
Qge
−
13.5
−
nC
Gate to Collector Charge
Qgc
−
28.5
−
nC
Min
Typ
Max
Unit
V
Rise Time
tr
Turn−Off Delay Time
Fall Time
VCC = 400 V, IC = 40 A,
RG = 6 VGE = 15 V,
Inductive Load, TC = 175°C
VCE = 400 V, IC = 40 A, VGE = 15 V
ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted)
Parameter
Diode Forward Voltage
Reverse Recovery Energy
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Symbol
VFM
Erec
trr
Test Conditions
IF = 20 A
IF = 20 A,
dIF/dt = 200 A/s
Qrr
TC = 25°C
−
2.2
2.8
TC = 175°C
−
1.94
−
TC = 175°C
−
50
−
J
TC = 25°C
−
31.8
−
ns
TC = 175°C
−
192
−
TC = 25°C
−
50.6
−
TC = 175°C
−
699
−
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGH40T65SHD
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 2. Typical Output Characteristics
Figure 1. Typical Output Characteristics
Figure 4. Saturation Voltage vs. Case Temperature
at Variant Current
Figure 3. Typical Saturation Voltage
Characteristics
Figure 6. Saturation Voltage vs VGE
Figure 5. Saturation Voltage vs. VGE
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4
FGH40T65SHD
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
Figure 9. Turn−On Characteristics
vs. Gate Resistance
Figure 10. Turn−Off Characteristics
vs. Gate Resistance
Figure 12. Turn−On Characteristics
vs. Collector Current
Figure 11. Switching Loss vs. Gate Resistance
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5
FGH40T65SHD
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Figure 13. Turn−Off Characteristics
vs. Collector Current
Figure 14. Switching Loss vs. Collector
Current
Figure 15. Load Current vs. Frequency
Figure 16. SOA Characteristics
Figure 18. Reverse Recovery Current
Figure 17. Forward Characteristics
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6
FGH40T65SHD
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Figure 19. Reverse Recovery Time
Figure 20. Stored Charge
P DM
t1
t2
Figure 21. Transient Thermal Impedance of IGBT
P DM
t1
t2
Figure 22. Transient Thermal Impedance of Diode
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CH
ISSUE A
DATE 09 OCT 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13853G
TO−247−3LD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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