A1266
Micropower Ultrasensitive 3D Hall-Effect Switch
FEATURES AND BENEFITS
DESCRIPTION
•
•
•
•
•
•
The A1266 integrated circuit is an ultrasensitive Hall-effect
switch with 3D omnipolar magnetic actuation. The single
silicon chip includes: three Hall plates, multiplexer, smallsignal amplifier, chopper stabilization, Schmitt trigger, and
NMOS output transistors. The device outputs turn on when a
magnetic field of sufficient strength is applied to the sensor
in any orientation. Removal of the magnetic field will turn
the output off.
True 3D sensing
Omnipolar operation with either north or south pole
2.5 to 5.5 V operation
Low supply current
High sensitivity, BOP typically 25 G
Chopper-stabilized offset cancellation
□ Superior temperature stability
□ Extremely low switch point drift
□ Insensitive to physical stress
• Solid-state reliability
• Choice of output format
□ Separate X, Y, and Z outputs
□ Combined (X+Y+Z) output
• Tiny SOT-23 packages
PACKAGES:
5-Pin SOT23-W
3-Pin SOT23-W
Two versions of the A1266 offer a choice of output format:
separate X, Y, and Z outputs, or a combined X+Y+Z output.
The low operating supply voltage, 2.5 to 5.5 V, and unique
clocking algorithm assist in reducing the average power
consumption, making it ideal for battery operation (e.g., the
power consumption is less than 25 μW with a 3.3 V supply).
The small geometries of the BiCMOS process allow for
ultrasmall packages suitable for even space-constrained
applications. In this case, a modified SOT23-W surface-mount
package is available in a 3-pin (combined output) or a 5-pin
(separate outputs) configuration, magnetically optimized for
use in a variety of orientations. The packages are lead (Pb) free
and RoHS-compliant, with 100% matte-tin leadframe plating.
Not to scale
VDD
Y Hall
Z Hall
Low-Pass
Filter
Hall
Amp.
Sample, Hold &
Averaging
Note for Pin Designations: Triple-Output (Single Output) Options
OUTX (OUT)
Demultiplexer
X Hall
Dynamic Offset
Cancellation
To All Subcircuits
OUTY (n/a)
Output
Logic
OUTZ (n/a)
GND
Functional Block Diagram
A1266-DS, Rev. 7
MCO-0000135
February 10, 2022
A1266
Micropower Ultrasensitive 3D Hall-Effect Switch
SELECTION GUIDE
Part Number
Packing
Package
Description
A1266ELHLT-T
7-in. reel, 3000 pieces/reel
5-pin SOT23-W
3 Outputs of X, Y, and Z
A1266ELHLX-T
13-in. reel, 10000 pieces/reel
5-pin SOT23-W
3 Outputs of X, Y, and Z
A1266ELHLT-SO3-T
7-in. reel, 3000 pieces/reel
3-pin SOT23-W
Single Output of OR (X, Y, and Z)
A1266ELHLX-SO3-T
13-in. reel, 10000 pieces/reel
3-pin SOT23-W
Single Output of OR (X, Y, and Z)
A1266ELHLT-SO-T*
7-in. reel, 3000 pieces/reel
5-pin SOT23-W
Single Output of OR (X, Y, and Z)
A1266ELHLX-SO-T*
13-in. reel, 10000 pieces/reel
5-pin SOT23-W
Single Output of OR (X, Y, and Z)
* These parts are in production but have been determined to be NOT FOR NEW DESIGN.This classification indicates that sale of this device is currently
restricted to existing customer applications. Samples are no longer available.
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
Characteristic
Symbol
Notes
Rating
Unit
Forward Supply Voltage
VDD
5.5
V
Reverse Supply Voltage
VRDD
–0.3
V
Magnetic Flux Density
B
Unlimited
G
Output Off Voltage
VOUT
5.5
V
Reverse Output Voltage
VROUT
–0.3
V
Continuous Output Current
IOUT
3
mA
Reverse Output Current
IROUT
–3
mA
–40 to 85
°C
TJ(MAX)
165
°C
Tstg
–65 to 170
°C
Operating Ambient Temperature
TA
Maximum Junction Temperature
Storage Temperature
Range E
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
2
A1266
Micropower Ultrasensitive 3D Hall-Effect Switch
PINOUT DIAGRAMS AND TERMINAL LIST TABLE
VDD
OUTX
1
2
5
OUTZ
4
GND
3
OUTY
VDD
1
OUT
2
A1266ELHLT-T,
A1266ELHLX-T
Pinouts
5
NC
4
GND
3
NC
VDD
1
3
OUT
GND
2
A1266ELHLT-SO-T,
A1266ELHLX-SO-T
Pinouts
A1266ELHLT-SO3-T,
A1266ELHLX-SO3-T
Pinouts
Terminal List Table
Pin
Number
A1266ELHLT-T,
A1266ELHLX-T
Symbol
VDD
2
3
Description
Symbol
Description
Power Supply
VDD
Power Supply
OUTX
Output of X magnetic field direction
OUT
OUTY
Output of Y magnetic field direction
NC
4
GND
Ground
5
OUTZ
Output of Z magnetic field direction
GND
NC
A1266ELHLT-SO3-T,
A1266ELHLX-SO3-T
Symbol
Description
VDD
Power Supply
X+Y+Z Output
OUT
X+Y+Z output
No connection
GND
Ground
Ground
–
–
No connection
–
–
1
Y
X
1
A1266ELHLT-SO-T,
A1266ELHLH-SO-T
Z
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
3
A1266
Micropower Ultrasensitive 3D Hall-Effect Switch
THERMAL CHARACTERISTICS
A1266 power consumption is extremely low. On-chip power dissipation will not be an issue under normal operating conditions.
Characteristic
Symbol
Notes
RθJA
Power Dissipation,
P D (mW )
Package Thermal Resistance
1900
1800
1700
1600
1500
1400
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
Rating
Unit
Package LH-3, 2-layer PCB with 0.463 in.2 of copper area,
each side connected by thermal vias
110
°C/W
Package LH-5, 4-layer board based on the JEDEC standard.
124
°C/W
2-
La
ye
r
(R PCB
,P
θJ
A =
4-L
11 ack
ay
0º ag
er
C/ e
W LH
(R PCB
)
-3
,
θJ
Pa
A =
12 cka
4ºC ge
/W LH
-5
)
20
40
60
80
100
120
140
160
180
Temperature (ºC)
Maximum Power Dissipation versus Ambient Temperature
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
4
A1266
Micropower Ultrasensitive 3D Hall-Effect Switch
ELECTRICAL CHARACTERISTICS: Valid over VDD = 2.5 to 5 V and full operating temperature range, unless otherwise specified
Characteristics
Supply Voltage
Output Leakage Current
Output On Voltage
Symbol
VDD
Test Conditions
Operating, TJ < 165°C
IOUTOFF
Typ. [1]
Max.
Unit
2.5
3.3
5.5
V
B < BRP
–
–
10
µA
IOUT = 2 mA, B > BOP
–
50
500
mV
Awake Time
tawake
–
300
–
µs
Mode Cycle Period
tperiod
–
165
–
ms
fC
–
800
–
kHz
–
3.6
mA
Chopping Frequency
Supply Current
VOUT(SAT)
Min.
IDD(EN)
Chip Awake (Enabled)
–
IDD(DIS)
Chip Asleep (Disabled), VDD = 2.5 V, TA = 25°C
–
–
15
µA
VDD = 2.5 V, TA = 25°C
–
7.8
21
µA
VDD = 5 V, TA = 25°C
–
9.5
40
µA
IDD(AVG)
MAGNETIC CHARACTERISTICS: Valid over VDD = 2.5 to 5 V and full operating temperature range, unless otherwise specified
Characteristics
Operate
Point [3]
Release Point [3]
Hysteresis [3]
Symbol
Test Conditions
Min.
Typ.
Max.
Unit [2]
BOPS
South pole to left, bottom, or branded face side
(see Figure 1)
–
25
40
G
BOPN
North pole to left, bottom, or branded face side
(see Figure 1)
–40
–25
–
G
BRPS
South pole to left, bottom, or branded face side
(see Figure 1)
5
17.5
–
G
BRPN
North pole to left, bottom, or branded face side
(see Figure 1)
–
–17.5
–5
G
BHYS
BOPS – BRPS, BOPN – BRPN
–
7.5
–
G
N
S
S
S
N
Y
X
N
Z
Figure 1: Three Dimensions of Magnet Orientation.
Applied field may be either north or south polarity.
Typical data are at TA = 25°C and VDD = 3.3 V (unless otherwise noted).
1 G (gauss) = 0.1 mT (millitesla)
[3] Applicable to all directions (X, Y, and Z)
[1]
[2]
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
5
A1266
Micropower Ultrasensitive 3D Hall-Effect Switch
40
40
35
35
30
TA(ºC)
25
-40
20
25
15
85
10
IDD(AVG) (µA)
IDD(AVG) (µA)
CHARACTERISTIC DATA
5
VDD(V)
25
2.5
20
3.3
15
5
10
5
0
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
-40
-60
-20
0
40
60
80
100
TA (ºC)
Average Supply Current vs. Supply Voltage
Average Supply Current vs. Ambient Temperature
350
25
300
85
250
Y and Z
200
-40
150
25
100
85
500
VOUT(SAT) (mV)
400
TA(ºC)
X Output
-40
450
50
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
450
VDD(V)
X Output
400
2.5
350
3.3
300
5
250
Y and Z
200
150
2.5
100
3.3
50
0
5
5.5
-60
-40
-20
0
VDD (V)
20
40
60
80
100
TA (ºC)
Average Low Output Voltage vs. Ambient Temperature
Average Low Output Voltage vs. Supply Voltage
IOUT = 20 mA
300
300
250
250
TA(ºC)
200
-40
150
25
100
85
50
tPERIOD (ms)
tPERIOD (ms)
20
VDD (V)
500
VOUT(SAT) (mV)
30
VDD(V)
200
2.5
150
3.3
100
5
50
0
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
-60
-40
-20
0
20
40
60
80
100
VDD (V)
TA (ºC)
Average Period vs. Supply Voltage
Average Period vs. Ambient Temperature
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
6
A1266
Micropower Ultrasensitive 3D Hall-Effect Switch
40
10
25
85
0
-10
BOPN
-40
-20
25
-30
85
2.0
2.5
3.0
3.5
4.0
VDD (V)
4.5
5.0
5.5
40
3.3
0
BOPN
-10
5
2.5
-20
3.3
-30
5
-60
-40
-20
0
20
TA (ºC)
40
60
80
100
40
VDD(V)
BOPS
30
20
-40
20
2.5
10
25
10
3.3
85
0
5
0
-10
BOPN
-40
-10
2.5
-20
25
-20
3.3
-30
85
-30
5
-40
BOPN
-40
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
-60
-40
-20
0
20
40
60
80
100
VDD (V)
TA (ºC)
Average Y-Axis Operate Point vs. Supply Voltage
Average Y-Axis Operate Point vs. Ambient Temperature
40
40
TA(ºC)
BOPS
30
VDD(V)
BOPS
30
20
-40
20
2.5
10
25
10
3.3
85
0
BOP (G)
BOP (G)
2.5
10
Average X-Axis Operate Point vs. Ambient Temperature
TA(ºC)
BOPS
30
20
-40
Average X-Axis Operate Point vs. Supply Voltage
BOP (G)
BOP (G)
-40
VDD(V)
BOPS
30
BOP (G)
BOP (G)
20
-40
40
TA(ºC)
BOPS
30
5
0
-10
BOPN
-40
-10
2.5
-20
25
-20
3.3
-30
85
-30
5
-40
BOPN
-40
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
-60
-40
-20
0
20
40
60
80
100
VDD (V)
TA (ºC)
Average Z-Axis Operate Point vs. Supply Voltage
Average Z-Axis Operate Point vs. Ambient Temperature
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
7
A1266
Micropower Ultrasensitive 3D Hall-Effect Switch
40
20
-40
20
2.5
10
25
10
3.3
85
0
-10
-10
2.5
-20
25
-20
3.3
-30
85
-30
BRPN
5
-40
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
-60
-40
-20
0
20
40
60
80
100
VDD (V)
TA (ºC)
Average X-Axis Release Point vs. Supply Voltage
Average X-Axis Release Point vs. Ambient Temperature
40
40
TA(ºC)
BRPS
30
VDD(V)
BRPS
30
20
-40
20
2.5
10
25
10
3.3
85
0
BRP (G)
BRP (G)
5
0
BRPN
-40
-40
5
0
BRPN
-10
BRPN
-40
-10
2.5
-20
25
-20
3.3
-30
85
-30
5
-40
-40
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-60
5.5
-40
-20
0
20
40
60
80
100
VDD (V)
TA (ºC)
Average Y-Axis Release Point vs. Supply Voltage
Average Y-Axis Release Point vs. Ambient Temperature
40
40
TA(ºC)
BRPS
30
VDD(V)
BRPS
30
20
-40
20
2.5
10
25
10
3.3
85
0
BRP (G)
BRP (G)
VDD(V)
BRPS
30
BRP (G)
BRP (G)
40
TA(ºC)
BRPS
30
5
0
-10
BRPN
-40
-10
2.5
-20
25
-20
3.3
-30
85
-30
5
-40
BRPN
-40
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
-60
-40
-20
0
20
40
60
80
100
VDD (V)
TA (ºC)
Average Z-Axis Release Point vs. Supply Voltage
Average Z-Axis Release Point vs. Ambient Temperature
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
8
A1266
Micropower Ultrasensitive 3D Hall-Effect Switch
20
16
16
10
BHYS(N)
-40
8
6
BHYS (G)
85
25
4
2.0
2.5
3.0
3.5
5
10
BHYS(N)
8
2.5
6
3.3
4.0
4.5
5.0
5
2
0
5.5
-60
-40
-20
0
20
40
60
80
100
VDD (V)
TA (ºC)
Average X-Axis Hysteresis vs. Supply Voltage
Average X-Axis Hysteresis vs. Ambient Temperature
20
20
TA(ºC)
BHYS(S)
18
16
16
10
BHYS(N)
-40
8
6
BHYS (G)
85
2.5
14
25
12
VDD(V)
BHYS(S)
18
-40
14
BHYS (G)
3.3
12
4
85
2
0
25
4
3.3
12
5
10
BHYS(N)
8
2.5
6
3.3
4
85
2
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5
2
0
5.5
-60
-40
-20
0
20
40
60
80
100
VDD (V)
TA (ºC)
Average Y-Axis Hysteresis vs. Supply Voltage
Average Y-Axis Hysteresis vs. Ambient Temperature
20
20
TA(ºC)
BHYS(S)
18
16
10
BHYS(N)
-40
8
6
25
4
BHYS (G)
85
2.5
14
25
12
VDD(V)
BHYS(S)
18
16
-40
14
BHYS (G)
2.5
14
25
12
VDD(V)
BHYS(S)
18
-40
14
BHYS (G)
20
TA(ºC)
BHYS(S)
18
3.3
12
5
10
BHYS(N)
8
2.5
6
3.3
4
85
2
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
5
2
0
-60
-40
-20
0
20
40
60
80
100
VDD (V)
TA (ºC)
Average Z-Axis Hysteresis vs. Supply Voltage
Average Z-Axis Hysteresis vs. Ambient Temperature
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
9
A1266
Micropower Ultrasensitive 3D Hall-Effect Switch
FUNCTIONAL DESCRIPTION
Device
Power-On
tawake
X Axis
Sleep
tawake
Y Axis
Sleep
tawake
Z Axis
Sleep
tawake = 300 µs [tawake(X) + tawake(Y) + tawake(Z)]
tperiod = 165 ms (tawake + 3 × tsleep)
tsleep = (tperiod – tawake)/3
tsleep = 54.9 ms
tperiod
Awake
IDD(EN)
Sleep
IDD(DIS)
Latch Output
Sample X
Latch Output
Sample Y
Latch Output
Sample Z
Latch Output
Sample X
Figure 2: Device Sleep and Awake Mode Cycle
Low Average Power
To keep average power low, internal timing circuitry activates
the sensor of each axis for 100 µs (followed by a low power
sleep time, tsleep, of 54.9 ms). This awake and sleep cycle occurs
three times for each tperiod, such that all three axes are sampled
in tperiod. The short “awake” time allows for stabilization prior
to the sensor sampling and data latching at the end of each tawake
cycle. The outputs during each tsleep cycle are latched in the last
sampled state. The supply current is not affected by the output
states.
Operation
For the single output option of the A1266, the output switches
low (turns on) when a magnetic field perpendicular to one of the
three Hall sensors, either the X, Y, or Z direction, exceeds the
operate point, BOPS (or is less than BOPN). The A1266 triple output option is configured with three separate outputs (X, Y, or Z),
which switch low (turns on) when a magnetic field perpendicular
to the corresponding Hall sensor (X, Y, or Z) exceeds the operate point, BOPS (or is less than BOPN). When the magnetic field is
reduced below the release point, BRPS (or increased above BRPN),
the device output switches high (turns off). The difference in the
magnetic operate and release points is the hysteresis, BHYS, of
the device. This built-in hysteresis allows clean switching of the
output even in the presence of external mechanical vibration and
electrical noise.
After turn-on, the output voltage is VOUT. Powering-on the device
in the hysteresis region, between BOP and BRP, allows an indeterminate output state. The correct state is attained after the first
excursion beyond BOP or BRP.
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
10
A1266
Micropower Ultrasensitive 3D Hall-Effect Switch
V+
Switch to High
Switch to High
BRPS
BRPN
VOUT
BHYS
0
VOUT(SAT)
BOPS
BOPN
B–
Switch to Low
Switch to Low
0
VOUT(HIGH)
B+
BHYS
Figure 3: Switching Behavior of Omnipolar Switches
On the horizontal axis, the B+ direction indicates increasing south
polarity magnetic field strength, and the B– direction indicates
decreasing south polarity field strength (including the case of
increasing north polarity)
Applications
It is strongly recommended that an external capacitor is connected (in close proximity to the Hall sensor IC) between the
supply and ground of the device to reduce both external noise and
noise generated by the chopper-stabilization technique. As shown
in Figure 4, a 0.1 µF capacitor is typical.
Extensive applications information on magnets and Hall-effect
sensors is available in:
• Hall-Effect IC Applications Guide, AN27701,
• Hall-Effect Devices: Guidelines for Designing Subassemblies
Using Hall-Effect Devices AN27703.1
• Soldering Methods for Allegro’s Products – SMD and
Through-Hole, AN26009
All are provided on the Allegro website:
www.allegromicro.com
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
11
A1266
Micropower Ultrasensitive 3D Hall-Effect Switch
Typical Application Circuits
A1266ELHLT-SO3-T, A1266ELHLX-SO3-T,
A1266ELHLT-SO-T, AND A1266ELHLX-SO-T
For sensors configured with the single output option, one pin
reports the output state from any of the three Hall elements.
VS
VDD
RLOAD
A1266
CBYP
0.1 µF
Sensor
Output
OUT
GND
GND
Figure 4: Typical Application Circuit for the Single Output Selection
A1266ELHLT-T AND A1266ELHLX-T
For sensors configured with the triple output option, the three
separate open drain outputs report the output state from the corresponding Hall elements.
VS
RLOAD
VDD
CBYP
0.1 µF
RLOAD
RLOAD
A1266
OUTX
Sensor
Outputs
OUTY
OUTZ
GND
GND
Figure 5: Typical Application Circuit for the Triple Output Selection
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
12
A1266
Micropower Ultrasensitive 3D Hall-Effect Switch
Chopper Stabilization
A limiting factor for switch point accuracy when using Halleffect technology is the small signal voltage developed across
the Hall plate. This voltage is proportionally small relative to the
offset that can be produced at the output of the Hall sensor. This
makes it difficult to process the signal and maintain an accurate,
reliable output over the specified temperature and voltage range.
Chopper stabilization is a proven approach used to minimize Hall
offset.
The Allegro technique, dynamic quadrature offset cancellation,
removes key sources of the output drift induced by temperature
and package stress. This offset reduction technique is based on a
signal modulation-demodulation process. Figure 6 illustrates how
it is implemented.
The undesired offset signal is separated from the magnetically
induced signal in the frequency domain through modulation. The
subsequent demodulation acts as a modulation process for the
offset, causing the magnetically induced signal to recover its original spectrum at baseband while the DC offset becomes a highfrequency signal. Then, using a low-pass filter, the signal passes
while the modulated DC offset is suppressed. Allegro’s innovative chopper-stabilization technique uses a high-frequency clock.
The high-frequency operation allows a greater sampling rate
that produces higher accuracy, reduced jitter, and faster signal
processing. Additionally, filtering is more effective and results in
a lower noise analog signal at the sensor output. Devices such as
the A1266 that use this approach have an extremely stable quiescent Hall output voltage, are immune to thermal stress, and have
precise recoverability after temperature cycling. This technique
is made possible through the use of a BiCMOS process, which
allows the use of low-offset, low-noise amplifiers in combination
with high-density logic and sample-and-hold circuits.
Multiplexer
VDD
Low-Pass
Filter
Amp.
Sample, Hold &
Averaging
Figure 6: Model of Chopper-Stabilization Circuit (Dynamic Offset Cancellation)
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
13
A1266
Micropower Ultrasensitive 3D Hall-Effect Switch
PACKAGE OUTLINE DRAWINGS
For Reference Only – Not for Tooling Use
(Reference Allegro DWG-0000628, Rev. 1)
Dimensions in millimeters – NOT TO SCALE
Dimensions exclusive of mold flash, gate burrs, and dambar protrusions
Exact case and lead configuration at supplier discretion within limits shown
2.975
AY
+0.125
–0.075
D
0.11
REF
2.90
4° ±4°
AZ
AX
5
+0.020
0.180
–0.053
E1 D
E1 D
+0.10
–0.20
1.91
+0.19
–0.06
E3 D
D E2
1
0.17
D REF
8× 10° ±5°
2
E2 D
0.25 MIN
0.38 NOM
D E3
0.55
REF
E3 D
0.25 BSC
Branded Face
D E2
0.57 ±0.04
0.10
0.41 ±0.04
3×
C
+0.10
0.05
–0.05
0.40 ±0.10
0.95
BSC
SEATING PLANE
GAUGE PLANE
1.00 ±0.13
C
SEATING
PLANE
E1 D
XXX
0.20 MIN
1
C Standard Branding Reference View
Line 1 = 3 characters
Line 1: Last 3 digits of Part Number
2.40
AX Active Area Depth, X Axis, 1.49 ±0.2
AY Active Area Depth, Y Axis, 1.45 ±0.15
1.00
AZ Active Area Depth, Z Axis, 0.28 ±0.04
0.70
B
0.95
PCB Reference Layout View
B
Reference land pattern layout; all pads a minimum of 0.20 mm from all adjacent pads;
adjust as necessary to meet application process requirements and PCB layout tolerances
C
Branding Scale and appearance at supplier discretion
D
Hall Elements (E1, E2, and E3), not to scale
Figure 7: Package LH, 5-Pin SOT23-W
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
14
A1266
Micropower Ultrasensitive 3D Hall-Effect Switch
For Reference Only – Not for Tooling Use
(Reference Allegro DWG-0000628, Rev. 1)
Dimensions in millimeters – NOT TO SCALE
Dimensions exclusive of mold flash, gate burrs, and dambar protrusions
Exact case and lead configuration at supplier discretion within limits shown
2.975
AY
+0.125
–0.075
4° ±4°
AZ
AX
+0.020
0.180
–0.053
3
D
0.11
REF
2.90
+0.10
–0.20
1.91
+0.19
–0.06
E3 D
D E2
1
0.17
D REF
2
E2 D
0.25 MIN
0.38 NOM
D E3
0.55
REF
E3 D
0.25 BSC
Branded Face
8× 10° ±5°
0.57 ±0.04
D E2
3×
0.10
E1 D
E1 D
0.41 ±0.04
C
+0.10
0.05
–0.05
0.40 ±0.10
0.95
BSC
SEATING PLANE
GAUGE PLANE
1.00 ±0.13
C
SEATING
PLANE
E1 D
XXX
1
C Standard Branding Reference View
Line 1 = 3 characters
Line 1: Last 3 digits of Part Number
2.40
AX Active Area Depth, X Axis, 1.49 ±0.2
AY Active Area Depth, Y Axis, 1.45 ±0.15
1.00
AZ Active Area Depth, Z Axis, 0.28 ±0.04
0.70
0.95
B PCB Reference Layout View
B
Reference land pattern layout; all pads a minimum of 0.20 mm from all adjacent pads;
adjust as necessary to meet application process requirements and PCB layout tolerances
C
Branding Scale and appearance at supplier discretion
D
Hall Elements (E1, E2, and E3), not to scale
Figure 8: Package LH, 3-Pin SOT23-W
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
15
A1266
Micropower Ultrasensitive 3D Hall-Effect Switch
Revision History
Number
Date
Description
–
March 20, 2015
1
May 5, 2015
2
September 22, 2015
3
January 9, 2017
Updated product offering (pages 2, 3, 12)
4
April 10, 2017
Updated package drawings (pages 14-15)
5
January 23, 2019
Minor editorial updates
6
February 4, 2020
Minor editorial updates
7
February 10, 2022
Updated package drawings (pages 14-15)
Initial Release
Revised IDD(EN) value and Figure 1
Added 3-pin SOT23-W package option and included explicit Active Area Depth for 3D sensor in
both package drawings; revised IDD(AVG) values and Figure 1; revised pin labels in Functional Block
Diagram
Copyright 2022, Allegro MicroSystems.
Allegro MicroSystems reserves the right to make, from time to time, such departures from the detail specifications as may be required to permit
improvements in the performance, reliability, or manufacturability of its products. Before placing an order, the user is cautioned to verify that the
information being relied upon is current.
Allegro’s products are not to be used in any devices or systems, including but not limited to life support devices or systems, in which a failure of
Allegro’s product can reasonably be expected to cause bodily harm.
The information included herein is believed to be accurate and reliable. However, Allegro MicroSystems assumes no responsibility for its use; nor
for any infringement of patents or other rights of third parties which may result from its use.
Copies of this document are considered uncontrolled documents.
For the latest version of this document, visit our website:
www.allegromicro.com
Allegro MicroSystems
955 Perimeter Road
Manchester, NH 03103-3353 U.S.A.
www.allegromicro.com
16