000833
Handbook of
X-ray Photoelectron
Spectroscopy
AReference Book of Standard Spectra
for Identification and Interpretation of XPS Data
by ,
Jolm F. Moulder
William F. Stickle
Peter E.'Sobol
Kennetlf D. Bomben
Edited by
Jill Chastain
Published by
Perkin-Elmer Corporation
Physical Electronics Division
6509 Flying Cloud Drive
Eden Prairie, MinnCSOla 55344
United Stales of America
£55f 'lOr 0£
Preface
X-ray Photoelectron Spectroscopy (XPS), also known as Electron Spectroscopy for Chem.ical Analysis (ESCA), is widely used LO investigate the chemical composition of surfaces. The usc of XPS in analytical laboratories throughout the
world attests to the problem-solving capability of this technique. The ability to explore the first few atomic layers and
assign chemical states to the detected atoms has shown XPS to be a powerful addition to any analytical laboratory.
A great deal of information has been published on the principles of the technique and the diverse range of applications
for which it is used. Volumes of XPS speclra exisl in the scientific literature, and international committees are establishing databases with reference spectra that will be made available to the geneml public. It is nOi the authors' intent to
exclude these specua or to ignore these databases. Rather the intent is to assemble a concise volume of standard spectra
to aid in the identification of XPS data.
"
The prevIous version of this handbook, published in 1918, ~ontained data acquired with a cylindrical mirror analyzer
(CMA). Since that time, our XPS hardware has evolved., We currently use a spherical capacitance analyzer (SCA) in
conjunction with improved detector technology and the choice of either a high-perfonnance AI x-ray monochromator or
an achromatic Mg/AI dual anode x-ray source. This handbook is an update of the previous handbook with data acquired
using our currenl SeA, which has a transmission function different from thai of a CMA, and both monochromatic and
achromatic x-ray sources. In addition, data are included from several elements not contained in the previous handbook.
This handbook is meant to selVe as a guide and reference work for the identification, quantification, calibration and
interpretation of XPS spectra for users of Perkin-Elmer XPS systems equipped with SCAs and Omni FOCUS™ lenses. It
is the authors' hope thai this handbook will playa useful role in the practice of XPS.
Perkin-Elmer Corporation
Physical Electronics Division
Oc.ober 1992
Acknowledgments: The authors and editor would like to thank the following individuals for their contributions to the
completion of this handbook: Dr. Charles Wagner, Surfex, for his contributions to the chemical states database; Dr.
Albert Bevolo, Iowa Stale University, Ames Laboratory (USDOE), for providing the rare eaI1h samples; Linda Wirtjes,
Physical Electronics Laboratory; Teresa Salvati; Dr. Douglas Stickle; and Dr. Michael Burrell, General Electric Company. The National Museum of Natural History - Smithsonian Institution provided the cinnabar sample (NMNH R630)
used for the mercury dala. Wc also gratefully acknowledge the authors of the previous handbook.
Table of Contents
I. X-ray Photoelectron Spectroscopy
A. Introduction
9
B. Principles of the Technique........................................................................................................................•.... 10
C. Preparing and Mounting Samples
I. Removing Volatile Material
2. Removing Nonvolatile Organic Contaminants
3. Surface Etching
4. Abrasion
5.. Fracturing and Scraping
6. Grinding to Powder
7. Mounting Powders for Analysis
12
D. Experimental Procedure
:
I. Technique for Obtaining Spectra
2. Instrument Calibration
3. Programming Scans for an Unknown Sample
a. Survey Scans
b. Detail Scans
14
E. Data Interpretation
I. The Nature of the Spectrum
a. General Features
b. Types of Lines
2. Line Identification
3. Chemical State Identification
a. Determining Static Charge on Insulators
b. Photoelectron Line Chemical Shifts and Separations
c. Auger Line Chemical Shifts and Auger Parameter
d. Chemical Information from Satellite Lines and Peak Shapes
16
4. Quantitative Analysis
5. Detennining Element Location
a. Depth
b. Surface Distribution
c. Insulating Domains on a Conduclor
F. Hnw to Use this Handbook
29
II. Standard XPS Spectra of the Elements
III. Appendix
A. Auger Parametm
198
B. Chemical States Tables
213
C. Chemical States Tables References
,
243
D. Valence Band Spectra
250
E. Atomic Sensitivity Factors for X-ray Sources at 90'
252
F. Atomic Sensitivity Factors for X-ray Sources at 54.7'
253
G. Line Positions by Element for AI Ka X-rays
254
H. Line Positions by Element for Mg Ka X-rays
256
J. Line Positions in Numerical Order
258
K. Periodic Table
261
I. X-ray Photoelectron Spectroscopy
Handbook of X-ray Photoelectron Spectroscopy
A. Introduction
A. Introduction
X-ray Photoelectron Spectroscopy (XPS) was developed in the
mid-l960s by Kai Siegbahn and his research group at the
University of Uppsala, Sweden. The technique was first known
by the acronym ESCA (Electron Spectroscopy for Chemical
Analysis). The advent of commercial manufacturing of surface
analysis equipment in the early 19705 enabled the placement
of equipment in laboratories throughout the world. In 1981,
Siegbahn was -awarded !.he Nobel Prize for Physics for his
wotk with XPS.
This handbook is meant to furnish the user with much of lhe
information necessary to use XPS for diverse types of surface
analysis. Information is provided on methods of sample
preparation, data gathering, elemental identification, chemical
stale identification, quantitative calculation and elemental distribution.
Surface analysis by XPS involves irradiating a solid in vacuo
with monoenergeLic soft x-rays and analyzing the emitted
electrons by energy. The spectrum is obtained as a plot of the
number of detected electrons per energy interval versus their
kinetic energy. Each element has a unique SpecUliffi. The
spectrum from a mixture of elements is approximately the
sum of the peaks of the individual constituents. Because the
,mean free path of electrons in solids is very small, the
, detected electrons originate from only the top few atOlruc
layers, making XPS a unique surface~sensitive technique for
chemical analysis. Quantitative data can be obtained from
peak heights or peak areas, and identification of chemical
states often can be made from exact measurement of peak
positions and separations, as well as from certain spectral features.
Included in this handbook are survey spectra, strong line
spectra and x-ray excited Auger spectra for most of the elements and some of their complunds, in addition to plOIS and
tables of energy shift data which aid in the identirlCation of
chemical states.
m
Perkin-Elmer Corporation
Physical Electronics Division "-'
9
Handbook of X-ray Phnloelectron Spectroscopy
B. Principles of the Technique
B. Principles of the Technique
' r . : : - - - - - - - - - - - - - - - - Fonli Levtl
~
Surface analysis by XPS is accomplished by irradiating a
sample with monocnergetic soft x-rays and analyzing the energy
of the detected electrons. Mg Ka (1253.6 eV) or Al K~ (1486.6
eV) x-rays are usually used. These photons have limited
penctrating power in a solid on the order of 1-10 micrometers.
Thcy interact with alOms in the surfacc region, causing electrons
to be emitted by the photoelectric effect. The emitted electrons
have measured kinetic energies givcn by:
KE =hv - BE - Ii.
•
I==-~~
"'"
>,
...
<oolo=========~ ~;;_- 4Fm
(I)
where hv is the energy of the pholon, BE is the binding energy
of the atomic orbital from which the electron originates, and f,
is the spectrometer work function.
The binding energy may be regarded as the energy difference
between the initial and final states after the photoelectron has
left the atom. Because there is a variety of possible final states
of the ions from each type of atom, there is a corresppnding
variety of kinetic energies of the emilie<! electrons. Moreover,
there is a different probability or cross-section for each final
state. Relative binding energies and ionization cross-sections for
an atom are shown schematically in Figure 1. The Fenni level
corresponds 10 zero binding energy (by definition), and the
deplh beneaLh the Femli level in the figure indicates the relative
energy of the ion remaining after electron emission, or the binding energy of the electron. The line lengths indicate the relative
probabilities of the various ionization processes. The p, d and f
levels become split upon ionization, leading to vacancies in the
Plfl, Pm, dlfl, dsn , f.'i12 and (1/2. The spin-orbit splitting ratio is 1:2
for p levels, 2:3 for d levels and 3:4 for f levels. As an example,
the spin-orbit splitting of the Si 2p is shown in Figure 2.
..
•
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,
,
•
•,
1
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•
4d~
"m
'00
100)
r---'''''
IlOO
1<00
Because each element has a unique set of binding energies, XPS
can be used to identify and determine the concentration of the
elements in the surface. Variations in the elemental binding
energies (the chemical shifts) arise from differences in the
chemical potential and polarizability of compounds. These
10
Figure I. Relati~e binding mergies lmd iO/Jization CroSNecliQlU for U. The
binding energy is jlroporriolla/lo llle distance below tile li,le illl/icating tile
Fenni level, and the ioniWlion cross-section is pro/JOrtionalto tile length of
the line.
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Perkin-Elmer Corporation
Physical Electronics Division
B. Principles of the Technique
Handbook of X-ray Photoelectron Spectroscopy
2p~
- - e - e - e - e - e - e - - L2,)or2p
Si 2p
e e'----- L,oc2s
Phoroelectron
"
/
- - - 0 - -••1 - - - - - Kor Is
os
,0>
BindiD& Energy (tV)
Auger electron •
Fi,Wft 2. High-tuolUliOll sptetrum If sillg/~·<:I'ptalSi slwwing 1M spin-orbil
spUrling of the 2p lt~L
/~
•
chemical shifts can be used to identify the chemical state of the
materials being analyzed.
In addition to photoeleclfons emitted in the photoelectric
process, Auger electrons may be emitted because of relaxation I
of the excited ions remaining after photoemission. This Auger
electron emission occurs roughly I(}"I. seconds after the
photoelectric event. The competing emission of a fluorescent x.-
ray photon is a minor process in this energy range. In the Auger
process (Figure 3), an ouler electron falls into the inner orbital
vacancy, and a second electron is simultaneously emitted, carry·
iog off the excess energy. The Auger electron possesses kinetic
energy equal to the difference between the energy of the initial
ion and the doubly charged fmal ion, and is independent of the
mode of the initial ionization. Thus, photoiol)ization normally
leads to two emitted electrons - a photoelectron and an Auger
electron. The sum of the kinetic energies of the electrons
emilie<! cannot exceed the energy of the ionizing photons.
Probabilities of electron interaction with matter far exceed those
of the photons, so while the path length of the photons is of the
order of micrometers, that of the electrons is of the order of tens
of angstroms. Thus, while ionization occurs to a depth of a few
micrometers, only those electrons that originate within tens of
Perkin-Elmer Corporation
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e~L2)OC2p
"
Llor2s
e• e
Kor Is
Figure 3. The XPS emissiOll process (top) for 0 model atom. An incoming
photon COUstS the ejection of the photoelectron. The relaxation process (bol·
tom) for 0 model atom I't:su/ting in Ik emission of a Kf...uLzJ eleclron. The
simullo~ous fWO-eleclron cou./ombic reomlllgemenl mulJs in a [mal Slate
with two elte/TOII varoneia
angstroms below the solid surface can leave the surface without
energy loss. These electrons which leave the surface without
energy loss produce the peaks in the spectra and are the most
useful. The electrons that undergo inelastic loss processes before
emerging form the background. Calculations of the inelastic
mean free paths of electrons in various materials are shown in
Figure 4.
11
Handbook orx·ray Photoe)ec)ron Spectroscopy
C. Preparing and Mounting Samples
The electrons leaving the sample are detected by an electron
spectrometer according to their kinetic energy. The analyzer is
usually operated as an energy window, referred to as the pass
energy, accepting only those electrons having an energy within
the range of Ihis window. To maintain a constant energy resolution, the pass energy is fixed. Incoming electrons are adjusted to
the pass energy before entering the energy analyzer. Scanning
for different energies is accomplished by applying a variable
electrostatic field before the analyzer. This retardation vollage
may be varied from zero up to and beyond the photon energy.
Electrons are detected as discrete events, and the number of
electrons for a given detection time and energy is stored and
displayed.
.,',---------------------,
•
"
AI
"
figure 4. Calculated inelastic elec/ron mean free paths in various me/als from
{he me/hod of S. Tanuma, C.J. Powell and D.R. Penn, Sr/rf. brrerjace Anal.
17,911 (l99ll
C. Preparing and Mounting Samples
In the majority of XPS applications, sample preparation and
mounting are not critical. Typically, the sample is mechanically
attached to the specimen mount, and analysis is begun wiltJ the
sample in the aNeceived condition. Additional sample preparation is discouraged in many cases because any preparation
might modify the surface composition. For those samples where
special preparation or mounting cannot be avoided, the following techniques are recommended.
1. Removing Volatile Material
Ordinarily, volatile material is removed from the sample
before analysis. In exceptional cases, when Ihe volatile
layer is of interest, lhe sample may be cooled for
analysis. The cooling must be to a sufficiently low
temperatufC to guarantee that the volatile element is not
warmed to evaporation by any heat load thaI the analysis
conditions may impan.
Removal of unwanted volatile materials is usually accomplished by long-term pumping in a separate vacuum
system or by washing with a suitable solvent. Use freshly distilled solvent to avoid contamination by high boiling point impurities within the solvent. Choice of the
solvent can be critical. Hexane or other light hydrocarbon solvents are probably least likely to alter the surface,
providing the solvent properties are satisfactory. Samples
may also be washed efficiently in a Soxhleu extractor
using a suitable solvent.
2. Removing Nonvolatile Organic Contaminants
When the nature of an organic contaminant is not of interest or when a contaminant obscures underlying
material that is of interest, the contaminant may be
removed with appropriate organic solvents. As with
volatile materials, the choice of solvent can be critical.
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Perkin-Elmer Corporation
\ j ! Ph.ysical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
C. Preparing and Mounting Samples
3. Surface Etching
6. Grinding to Powder
Ion sputter-etching or other erosion techniques, such as
the use of an oxygen plasma on organic materials (see
Section E.5.a.(J), p. 27), may be used to remove surface
contaminants. This technique is particularly useful when
removing adventitious hydrocarbons from the sample or
when the native oxides, formed by exposure to the atmosphere, are not of interest.
If spectra charactcristic of bulk composition are desired,
samples may be ground to a powder in a mortar. Protection of the fresh surfaces from the atmosphere is required. When grinding samples, localized high temperatures can be produced, so grinding should be done slowly to minimize heat-induced chemical changes at the
newly created surfaces. The mortar should be well
cleaned before reuse.
Argon ion etching is commonly used to obtain information on composition as a function of the exposure time
to ion etching. Calibration of the spuller rates can be
used to convert spuner timc to infonnation on depth into
the specimen. Because sputtering may cause changes in
the surface chemistry, identification of the changes in
chemical stales with depth may not reflect the true composition.
4. Abrasion
Abrasion of a surface can be done without signiflCaI1t
contamination by using a laboratory wipe, a cork, a file
or a knife blade. This may cause local heating, and reaction with environmental gases may occur (e.g., oxidation
in air and formation of nitrides in nitrogen). To prevent
oxidation of more active materials, perform abrasion in
an inell atmosphere such as a glove box. The abraded
material should then be transferred to the ultra-high
vacuum (UHV) chamber in a sealed vessel to preserve
the clean surface.
5. Fracturing and Scraping
With proper equipmen~ many materials can be fractured
or scraped within the test chamber under UHV conditions. While this obviates contamination by reaction with
atmospheric gases, allention must be given to unexpected results which might occur. Fracturing might occur
along the grain boundaries which may not be representalive of the bulk material. Scraping can cover hard
material with soft material whcn the sample is lllultiphase.
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7. Mounting Powders for Analysis
There are a number of methods which can be used to
mount powders for analysis. Perhaps the most widely
used method is dusting the powder onto a polymer-based
adhesive tape with a camel-hair brush. The powder mUSl
be dusled across the surface carefully and lightly, with
no wiping strokes. Some researchers shun organic tape
" for UHV work, but others have successfully used certain
types of tape in the 10. 10 Torr range.
Alternative methods for mounting powders include
pressing (he powder into indium or other soft foils, supporting the powder on a metallic mesh, pressing the
powder into pellets or simply depositing (he powder by
gravity. With the foil method, the powder is pressed between two pieces of pure foil. The pieces arc then
separated, and one of them is mounted for analysis. Success with this techntque has been varied. Sometimes
bare foil remains exposed and, if lhe sample is an insulator, pans of the powder can charge differently. Differential charging can also be a problem when a metallic
mesh is used to suppon (he powder. If a press is used to
form the powder into a pellet of workable dimensions, a
press with hard and extremely clean working surfaces
should be used. Gravity can effectively hold some
materials in place, particularly if a shallo.w well or
depression is cuI in the surface of tht sample mount.
Allowing a liquid suspension of the powder to dry on
the specimen holder is an effective way of producing a
D. Experimental Procedure
unifonJl lflyer. With the.~ methods, care must be taken in
pump-down to ensure that gas evolution does not disturb
Handbook or X-ray Photoelectron Spectroscopy
the sample. A throttled roughing valve is especially effcctive.
D. Experimental Procedure
1. Technique for Ohtaining Spectra
All spectra in this handbook were obtained using a PHI
Mooel 5600 MultiTcchnique system. A schematic
diagram of the apparatus (Figure 5) illustrates the
relationship of major components, including the electron
energy analy:r.er, the x-ray source, and the ion gun used
ror sputter-etching_ The Model !(}.J60 Electron Energy
Analyzer incorporated into the 5600 is an SeA, and the
input lens to the analyzer is an Omni Focus JII lens. The
excitation sources used were a Model 10.550 x-ray .source with a Model 10-410 monochromator and a
Model 04-548 dual-anode source which was used with 'a
magnesium anode. All of the spectra in the handbook
were taken with the x·ray source operating at 400 W(15
kV - 27 rnA). The specimens were analyzed at an
electron take·off angle of 70', measured with respect to
the surface plane. The monochromatic x-ray source is located perpendicular to the analyzer axis, and the standard x-ray source is located at 54.7' relative to the
analyzer axis.
In the PHI Model 5600 MultiTechnique system, energy
distribution, energy resolution and analysis area are all a
function of the analyzer. For all of the spectra in this
handbook, the spectrometer was operated in a standard
mode. The Omni Focus III lens was used to scan the
spectrum while Ihe SeA was operated at a constant pass
energy. This resulted in constant resolution (.6.£) across
lhe entire energy spectrum. The size of the analysis area
was defined by the aperture selection of the Omni Focus
III lens. Analyzer energy resolution (6EJE) was determined by the choice of pass energy and the seiected
J4
aperture. AU of the spectra in this handbook were 00.
tained using an 800 11m diameter analysis area.
All of the spectra in lhis handbook were recorded and
stored using the PHI ACCESSfM data system. The instrument was calibrated daily, and the calibration was checked several times each day during data acquisition. The
analyzer work. function was determined assuming the
binding eocrgy or the Au 4rm peak to be 84_0 eV. All
survey spectra scans were taken at a pass energy of 58.7
eV. The narrow scans of strong lines were, in most
cases, just wide enough to encompass the peak(s) of interest and were obtained with a pass energy of 23.5 eV.
A lower pass energy may show more structure for some
materials. The narrow spectra were necessary to accurately determine the energy, shape and spin-orbit split.
ting of the strong lines. On insulating samples, a highresolution spectrum was taken of the adventitious
hydrocarbon on the surface of the sample to use as a
reference for charge correction. The generally accepted
binding energy for adventiLious carbon is 284.8 eV.
The samples analyzed to obtain the spectra in this handbook are standard materials of known composition.
Metal foils and polycrystalline materials with large sur·
face areas were mechanically fastened to the specimen
mount. Powder samples were ground with a mortar and
pestle to expose fresh surfaces and were dusted onto adhesive tape. Most elemental standards were sputteretched immediately prior to analysis to remove surfn
contamination. Most compounds, however, were ground
or cleaved, and lhe freshly exposed surface was analyzed
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Perkin-Elmer Corporation
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, Handbook of X-ray Photoelectron Spectroscopy
D. Experimental Procedure
a pass energy of 23.5 eV or less (corresponding to the
pass energy nonnally used for high resolution scans)
should be used.
There is general agreement 011 accurate values of Cu, Au
and Ag standard line energies. The values in Table I are
recommended for clean Au, Ag and Cu:
Table 1. Referellce Billdillg Energies (eV)
Cu 3p
Au4fm
Ag3d~
AIKa
MgKa
75.14
8198
361.26
75.13
84.00
361.27
334.94
932.66
895.75
Cu L~lM 561.96
93167
Cu 2Pl'2
A, M,NN 1128.78
fran M. P. Seah Swf/fIlu/QaAnoJ. 14,488 (1989)
Because tbe 2Pl'l and JPl'l photoelectron peak ,n''Eies
of Cu are widely separated in energy, measurement of
Figuft 5. A sclllrnOlic diagram of the PHI MOtkI 5600 Mul1l7lChniqul sysrem.
without etching in order to avoid possible changes in
surface chemistI)'. Ne, Xe and Kr were implanted in
graphite and Ar ill silicon via ion implantation to unknown concentrations prior to analysis.
2. Instrument Calibralion
To ensure the accuracy of the data presented in this
handbook, the instrument used 10 obtain the data was
calibrated regularly throughout the data-gathering
process. The best way to check calibration, and the
method used here, is to record suitable lines from a
known, Conducting specimen. Typically, the Au 4f or Cu
2p and 3p lines are used. The lines should be recorded
with a narrow sweep width in thc range of 5-10 cV, and
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these peak binding energies provides a quick and simple
means of checking the accuracy of the binding energy
scale. Utilizing all of the above standard energies establishes the linearity of the energy scale and its position,
i.e., the location of the Fermi level.
3. Programming Scans for an Unknown Sample
For a typical XPS investigation where the surface composition is unknown, a broad scan survey spectrum
should be obtained flrst to identify the elements present.
Once the elemental composition has been detennined,
narrower detailed scans of selected peaks can be used
for a more comprehensive picture of the chemical composition. This is the procedure that has been followed in
compiling data for this handbook, even though specimen
composition was known prior to analysis.
a. Survey Scans. Most elements have major
photoelectron peaks below 1100 eV, and a scan range
from 1100-0 eV binding energy is usually sufficient to
15
E. Data Interpretation
identify all detectable elements. The spectra in this handbook were recorded with a scan range of 1400-0 eV (AI
excit3tton) or 1200.0 eV (Mg excitation) binding energy.
In an unknown sample, if specific elements are suspected
at low concentrations, their standard s~ctra should be
consulted before programming the survey scan. If the
strongest line occurs above 1100 eV binding energy, the
scan range can be morlificd accordingly.
An analy-ar pass energy of 187 eV, in conjunction with
the appropriate apenure, is recommended for survey
scans with the PHI Model 5600 MultiTechnique system.
These settings result in adequate resolution for elemental
identification and produce very high signal intensities,
minimizing data acquisition time ,md maximizing
elemental delectability.
b. Detail Scans. For purposes of chemical state iden:
litication, for quantitative analysis of minor components
and for peak deconvolution or other mathematical
manipulations of the data, detail scans must be obtainetl
for precise peak location and for accurate registration of
line shapes. There arc some logical rules for this
programmmg.
Handbook of X·ray Photoelectron Spectroscopy
terest, yet with small enough step sizes 10 permit
determination of the exact peak position. Sufficient
scanning must be done within the time limits of
the analysis in order to obtain good counting statistics.
(2) Peaks from any species thought to be radiation-sensitive or transient should be run first.
Otherwise, any convenient order may be chosen.
(3) No clear guidelines can be given on the maximum duration of data gathering on anyone
sample. It should be recognized, however, that
chemical states have vastly varying degrees of
radiation sensitivity and that for anyone set of irradiation conditions, there exists for many samples
a condition beyond which it is impraclical to attempt gathering data.
(I) Scans should be wide enough to encompass
(4) With the PHI Model 5600 MultiTechnique system, an analyzer pass energy of 23 eV is nonnally
used for mutine detail scans. Where higher energy
resolution is needed, lower pass energies can be
utilized. For example, the sputter-cleaned Si 2p on
p. 56, taken at 23 eV pass energy, can be compared
to the chemically etched Si 2p shown in Figure 2
the background on both sides of the region of in-
(p. II)
E. Data Interpretation
1. The Nature of the Spectrum
a. Gencr<ll Features. The spectrum is displayed as a
plot of the number of electrons versus electron binding
energy in II fixed, small energy interval. The position on
the kinetic energy scale equal to the photon excitation
energy minus the spectrometer work function cor-
responds 10 a binding energy of 0 eV with reference to
the Fermi level (Equation I, p. 10). Therefore, a binding
energy scale with 0 at that point arKI increasing to the
left is customarily used.
The speclra in this handbook are typical for the various
elements. The well-defined peaks are due to electrons
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Perkin-Elmer Corporation
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E. Data Interpretation
Handbook of X-ray Photoelectron Spectroscopy
strumental contribution to the observed line width.
Less intense photoelectron lines at higher binding
energies are usually wider by 1-4 eV than the lines
at lower binding energies. All of the photoelectron
lines of insulating solids are of the order of 0.5 eV
wider than photoelectron lines of conductors. The
approximate hinding energies of all photoelectron
lines detectable by AI or Mg radiation are
cataloged in Appendices Gand H.
which have not suffered an inelastic energy loss emerging from the sample. Electrons that have lost energy inCTCase the level of the background at binding energies
higher than the peak energy. The background is continuous because the energy Joss processes are random
and multiple. The background in the Mg Ka induced
spectra is larger than the background in the
monochromalcd Al Ka induced spectra because of excitation by Bremsstrahlung radiation of the nonmonochromated light.
(2) Auger Lines. These are groups of lines in
The "noise" in the spectrum is not instrumental in origin
but is the consequence of the collection of single
electrons as counts randomly spaced in time. The standard deviation for counts collected in any channel is equal
to the square root of the counts SO thaI the percent standard deviation is lOO/(counts)1f2. The signal-to-noise ratio
is then proportional to the square root of the counting
time. The background level upon which the peak is superimposed is a characteristic of the specimen, the excitation source and lhe transmission characteristics of the
instrument.
b. Types of Lines. Several types of peaks are observed
in XPS spectra. Some are fundamental to lhe technique'
and are always observed. Others are dependent upon the
exact physical and chemical nature of the sample. A
third type is the result of instrumental effects. The following describes the various spectral features that are
likely to be encountered:
Photoelectron Lines. The most intense
photoelectron lines are relatively symmetrical and
are typically the narrowest lines observed in the
spectra. Photoelectron lines of pure metals can,
however, exhibit considerable asymmetry due 10
coupling with conduction electrons. Peak width is
a convolution of the natural line width (the
lifetime of lhe "hole" resulting from the
photoionization process), the width of the x-ray
line which created the photclectron line and the in-
(1)
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tT\
\II
.'
rather complex patterns. There are four main
Auger series observable in XPS. They arc the
KLL, LMM, MNN and NOO series, identified by
specifying the initial and final vacancies in the
Auger transition. The KLL series, for example, includes those processes with an initial vacancy in
the Kshell and final double vacancy in the Lshell.
The symbol V (e.g., KVV) iodieates that the final
vacancies are in valence levels. The KLL series
has, theoretically, nine lines, and others have still
more. Because Auger lines have kinetic energies
which are indePendent of the ionizing radiation,
they appear on a binding energy plot to be in different positions when ionizing photons of different
energies (i.e., different x-ray sources) are used.
Core-type Auger lincs (with final vacancies deeper
than the valence levels) usually have at least one
COOlponent of intensity similar to the most intense
photoelectron line. Positions of the more
prominent Auger components are cataloged along
with the photoelectron peaks in Appendices G and
H.
(3) X-ray Satelliles. The x-ray emission spectrum
from a nonmonochromatic source used for irradiation exhibits not only the characteristic x-ray but
also some minor x-ray components at higher
photon energies. For each photoelectron peak that
results from the routinely used Mg and AI Kn x-
17
E. Data Interpretation
Handbook of X-ray Photoelectron Spectroscopy
ray photons, there is a family of minor peaks at
lower binding energies, with intensity and spacing
characteristic of the x-ray anode material. The pattern of such satellites for Mg and AI is shown in
Table 2. A resultant spectrum using Mg x-rays is
shown in Figure 6.
48.7
0.5
generation of x-rays within the sample itself. This
last possibility is rare because the probability of
x-ray emission is low relative to Auger electron
emission. Nevertheless, such minor lines can be
puuling. Table 3 indicates where such peaks are
most likely to occur relative to the most intense
photoelectron lines. Because such ghost lines rarely appear with nonmonochromatic x-ray sources
and are not possible with monochromatic x-ray
sources, .they should not be considered in line
identification until all other possibilities are excluded.
69.7
0.6
Table 3. Displactlllent of X-ray GIIOSI lilies (eV)
Tobie 2. X-m] SaUllile Ellergits (l.IId In/lnsiJies
a"
Mg displacemcnl, eV 0
relative height
100
AI displacement, eV
relative height
0
100
"8.' 10.1'" 17.6" 20.6"'
8.0
• .1
0.6
OJ
9.8
6.4
11.8
J.2
20.1
0.4
23.4
OJ
P
Contaminating
Radiation
."
.'
o(K.)
c, (La)
Mg (Ka)
AI (K.I
'"
JOO
FiglUt 6. Mg x-roy SQuf/it~s
obs~1Vtd
in tht C Is sp«1nun of graplUrt.
(4) X-ray Ghost Lines. Occasionally, x-radiation
from an element other than the x-ray source anode
material impinges upon the sample, resulting in
small peaks corresponding to the most intense
spectral peaks but displaced by a characteristic
energy interval. These lines may result from Mg
impurity in the Al anode or vice versa, eu from
the aoode base structure, oxidation of the anode, or
generation of x-ray photons in the AI foil x-ray
window. On occasion, such lines can originate via
18
(5) Shake-Up Lines. Not all photoelectric proces-
210
Binding Energy (eV)
Anode Material
Mg
AI
728.7
961.7
323.9
556.9
233.0
·233.0
ses are simple ones which lead to the fonnation of
ions in the ground state. but there is a finite probability that the ion will be left in an excited state a
few electron volts above the ground state. In this
event, the kinetic energy of the emitted
photoelectron is reduced, with the difference corresponding to the energy difference between the
ground state and the excited state. This results in
the foonation of a satellite peak: a few electron
volts lower in kinetic energy (higher in binding
energy) than the main peak. For example, the characteristic shake-up line for carbon in aromatic
compounds, a shake-up process involving the ener·
gy of the 1t -? 1t* transition, is shown in Figure 7.
In some cases, most often with paramagnetic com·
pounds, the intensity of the shake-up satellite may
Perkin-Elmer Corporation
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Electronics Division
Handbook of X-ray Photoete<lron Spectroscopy
E. Data Interpretation
C I'
C"
)
\
280
Bindint Fllergy (eV)
Figure 7. The 11 bond shflke.up salel/ile for C 1£ in polystyrene. The peak is
aboul6.7 eV higher ihan/he main photopeak.
approach that of the main line. More than one
satellite of a principal photoelectron line can also
be observed, as shown in Figure 8. The occunence
of such lines is sometimes also apparent in Auger
spectral contours (Figure 9). The displacements
and relative intensities of shake.up satellites can
sometimes be useful in identifying the chemical
stale of an element, as discussed in Section EJ.d.
""0
.
(p.24).
(6) Mulliplet Splitting. Emission of an electron
from a core level of an atom that itself has a spin
(unpaired electrons in valence levels) can create a
vacancy in two or more ways. The coupling of the
new unpaired eleclTOn left after photoemission
from an s-type orbital with orner unpaired
electrons in the alOm can create an ion with
several possible final state configurations and as
many energies. This results in a photoelectron line
which is split asymmelricaJly into several components similar to the one s~own in Figure 10.
MUltiplet splitting also occurs in the ionization of
p levels, but the result is more complex and subtle.
In favorable cases, it results in an apparent slight
Perkin-Elmer Corporation
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970
925
Binding Energy (eV)
Figurr 8. &amp/a of shoU-up lintS (s)
of Ihe c~r 2p obstmd in cop-
fJlr c<mpOunds.
increase in the spin doublet separation, evidenced
in the separation of the 2pln and 2P3r2 lines in
first-row transition metals. and in the generation of
a less easily noticed asymmetry in the line shape
of the components. Often such effects on the p
double! are obscured by shake-up lines.
Energy Loss Lines. With some materials, there
is an enhanced probability for loss of a specific
(7)
cD
19
Handbook of X-ray Photoelectron Spectroscopy
Ii:. Oa1.1 InteqJrelation
Ni (C2HJOm' 4Hi)
""L_~_ _~--~--~--'~600
M,
\
BlIldiD& Encrzy (eV)
Figure 9. Examplts of tht tJJtclS of chemical stalts OR Augtr lint shopts in
nickel compounds.
:
amount of energy due 10 interaction between the
photoelectron and other electrons in the surface
region of the sample (Figure 11), The energy loh
phenomenon produces a distinct and rather sharp
hump 20-25 eV above the binding energy of the
parent line. Under certain conditions of spectral
display, energy loss lines can cause confusion.
Such phenomena in insulators are rarely sharper
than that shown in Figure II and arc usually much
more muted. They are different in each solid
medium.
With metals, the effect is often much more
dramatic, as indicated by the loss lines for
aluminum shown in Figure 12. Energy loss to the
conduction electrons occurs in well-defined quanta
characteristic of each metal. These plasmons arise
from group oscillations of the conduction
electrons. The photoelectron line, or the Auger
line, is successively mirrored at intervals of higher
binding energy with reduced intensity. The energy
''''
80
Binding EncItY (eV)
Figurr: 10. Multiplet splitting of t~ Mn Js.
interval between the primary peak and the loss
peak is called the plasmon energy_ The so-called
bulk plasmons are the more prominent of these
lines. Asecond series, the surface plasmons, exists
at energy intervals detennined approximately by
dividing the bulk plasmon energy by the square
root of two. The effect is not easily observed in
nonconductors, nor is it prominent in all conductors. Plasmon lines are especially prominent in the
Groups 13 and lIa metal spectra in Ihis handbook.
(8) Valence lines atuf Bands. Lines of low inten-
sity occur in the low binding energy region of the
m
W
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Handbook or X-ray Photoelectron Spectroscopy
tween insulators and conductors are especially
notcd by the absence or presence of electrons from
conduction bands at thc Fermi level. Valcnce
bands may also be used to distinguish between
materials where the core level XPS photoelectron
lines arc quite similar in shape and position. Appendix 0 contains valence band spectra of several
materials.
0"
2, Line Identification
520
""
Binding Energy (eV)
Figuft II. Enff8Y loss tRW:/opt from Iht 0 Is line in AllYl (sopphire).
In general, interpretation of the XPS spectrum is most
readily accomplished first by identifying the lines that
are almost always present (specifically those of C and
0), then by identifying major lines and associated
weaker lines, and lastly by identifying the remaining
weak lines. Most modem, commercially available
5peClrOmetcTS have peak identification algorithms within
" their data reduction packages. Poor signal-to-noise of the
data or database limitations may require manual identification of some peaks. The following step-by-step procedure simplifies the data interpretation task and minimizes data ambiguities.
Step I, The Cis, 0
•
NornW •
•
b
""""
'~
\'--'---
190
11O
Binding Energy (eV)
FigUft 11 Sutface (s) and bulJ: (b) Jiasmotlli1ltS assockl/td wi/It the AI 2s
at IIOnMI and gmting
IQu-<Jff OIIglts.
spectrum between the Fermi level and 10-20 eV
binding energy_ These lines are produced by
photoelectron emission from molecular orbitals
and from solid state energy bands. Differences be-
Perkin-Elmer Corporation
Physical Electronics Division
I~
C (KLL) and 0 (KLL)
lines are usually prominent in any spectrum. Identify these lines first along with all derived x-ray
satellites and energy loss envelopes.
Step 2. Identify other intense lines (Appendix J)
present in the spectrum, then label any related
satellites and other less intense spectral lines associated with those elements. The energy positions
of the less intense lines are noted in the line position table with the spectra. Keep in mind that some
lines may be interfered with by more intense,
overlapping Jines from other elements, The most
serious interferences by the C and 0 lines, for example, are Ru 3d hy C Is, V 2p and Sb 3d by 0
Is, I (MNN) and Cr (LMM) by 0 (KLL), and Ru
(MNN) by C (KLL).
E. Data Interpretation
Step 3. Identify any remaining minor Jines. In doing
this, assume they are the most intense lines of an unknown clement. If not, they should already have been
identified in the previous steps. Again, keep in mind
possible line interferences. Small lines that seem unidentifiable can be ghost lines. Use Table J (p. 18) to check
for the more intense parent photoeleclron lines.
Step 4. Check the conclusions by noting the spin
doublets for p, d and f lines. They should have the right
separation (cf. spin orbit splitting for individual elemenls
and Appendices G and H) and should be in the correct
intensity ratio. The ratio for p lines should be about 1:2,
d lines 2:3 and f lines 3:4. P jines, especially 4p lines,
may be less than 1:2.
Handbook of X-ray Photoelectron Spectroscopy
electrons and tends to make the peaks appear at higher
binding energies, whereas excessive charge compensation can makc thc peaks shift to lower binding energies.
The following are four methods which are usually valid
for charge correction on insulating samples:
(/) Measurement of the position of the C Is line
from adventitious hydrocarbon nearly always
present on samples introduced from the laboratory
environment or from the glove box. This line, on
unspullered inen metals such as Au or Cu, appears
at 284.8 eV, so any shift from this value can be
taken as a measure of the stalic charge. At this
time, it is not known whether a reproducible line
position exists for C remaining on the surface after
ion beam ctching.
3. Chemical State Identification
The identification of chemical Slates primarily depends:
on the accurate deternlination of line energies. To determine line energies accuralely, the voltage scale of Ihe
instrumenl must be precisely calibrated (cf. Section 0.2.,
p. 15), a line with a narrow sweep range m~st be
recorded wilh good statistics (of lhe order of several
thousand counts-per-channel above background), and accurate correction must be made for SIalic charge if the
sample is an insulator.
(2) The use of an internal standard, such as a
hydrocarbon moiety of a polymer sample. For the
study of supported catalysts or similar materials,
one can adopt a suitable value for a constituent of
the support and use that to interrelate binding energies of different samples. One must be certain that
treatments of the various samples are not so different that the inherent binding energies of support
constituents are changed.
a. Determining Static Charge on Insulators. During
analysis, insulating samples tend to acquire a steadystate charge of as much as several volts. This steadystate charge is a balance between electron loss from the
surface by emission and electron gain by conduction or
by acquisition of slow or thermal eleclrons from the
vacuum. The steady-slale charge, usually positive, can
be minimized with an adjacent neutralizer or flood gun.
It is often advantageous to do this to reduce differential
charging and sharpen the spectral lines.
(3) The use of a normally insulating sample so
thin that it effectively does not insulate. This can
be assumed if the spectrum of the underlying conductor appears in good intensity and if line positions are flOt affected by changes in electron flux
from the charge neutralizer.
A serious problem is exactly determining the extent
of charging. Any positive charging retards outgoing
(4) For the study of insulating polymer films,
binding energies of the C functional groups may
also be determined by applying a small amount of
poly(dimethyl siloxane) solution (10.6 M) 10 the
sample surface and chargc reference to the Si 2p
of the silicone (at about 102.1 eV).
iI'\
W
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Handbook of X-ray Pholoeleclron Speclroscopy
SOffie precautions should be kept in mind. If the sample
is heterogeneous on even a micrometer scale, particles of
different materials can be charged to different extents,
and interpretation of the spectrum is complicated accordingly. One cannol physically mix a conducting standard
like Au or graphite of micron dimensions with a powder
and validly use the Au or graphite line in order to COfrect for static charge. Differential charging can be minimized to a great extent by using a flood source of lowenergy electrons.
b. Photoelectron Line Chemical Shifts and Separations. An imponant advantage of XPS is its ability to
obtain information on chemical stales from the variations
in binding energies, or chemical shifts, of the
photoelectron lines. While many auempts have been
made to calculate chemical shifts and absolute binding
energies, the factors involved (especially in the solid
Slate) are imperfectly understood, and one must rely on
experimental data from standard materials. The tables
accompanying the spectra in this handbook record considerable data from the literature as well as data obtained
specifically for this handbook. All literature data have
been carefully evaluated to the instrumental calibration
and static charge reference values given above and are,
therefore, directly comparable.
Because occasional line interferences do occur, it is
sometimes necessary to use a line other than the most
intense one in the spectrum. Chemical shifts of a minor
line are within 0.2 eV of the chemical shift of the
primary line. However, exceptional separations can
occur in paramagnetic materials because of multiplet
splitting. Separations of photoelectron lines can be determined approximately from the line position tables in Appendices G and H.
c. Auger Line Chemical Shifts and the Auger
Parameter. Core-type Auger lines (transitions ending
with double vacancies below the valence levels) usually
have at least one component that is narrow and intense,
Perkin-Elmer Corporation
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E. Data Interpretation
often nearly as intense as the strongest photoelectron
line (cr. spec", for F, Na, As, In, Te and Ph). There are
four core Auger groups that can be generated by Mg or
Al ,-mys: the KLL (Na, Mg); the LMM (Cu, Zo, Ga,
Ge, As, Se); the MNN (Ag, Cd, 10, So, Sb, Te, I, Xc, Cs,
Ba); and NOO (Th, U).. The MNN lines in the rare
earlhs, while accessible, are very broad because of multiplet splitting and shake-up phenomena with most of the
compounds. Valence-type Auger lines (final states with
vacancies in valence levels) - such as those for 0 and
F (KLL); Mo, Fe, Co and Ni (LMM); and Rn, Rh aod
Pd (MNN) - can be intense and are, therefore, also
useful. Chemical shifts occur with Auger lines as well as
with photoelectron lines. The chemical shifts are different from those of the photoelectron lines, but they are
often more pronounced. This can be very useful for
identifying chemical states, especially in combination
: with photoelectron chemical shift data. If data for the
various chemical Slates of an element are plotted with
the binding energy of the photoelectron line on the
abscissa and the kinetic energy of the Auger line on the
ordinate, a two-dimensional chemical slate plot can be
obtained. Such plotS are in Appendix A for F, Na, AI, Si,
5, Cu, ?n, As, Se, Ag, Cd, In, So and Te.
With chemical states displayed in two dimensions, the
Auger parameter method becomes more powerful as a
tool for identifying the chemical components than using
photoelectron chemical shifts alone. In the (annat
adopted for this handbook, the kinetic energy of the
Auger line is plotted against the binding energy of the
photoelectron line, with the latter plotted in the ·x direction (kinetic energy is still, implicitly, +x). The kinetic
energy of the Auger electron, referred \0 the Fermi level,
is easily calculated by subtracting from the photon energy the position of the Auger line on the binding energy
scale.
With this arrangement, each diagonal line represents all
values of equal sums of Auger kinetic energy and
21
E. Data InterpreL'ltioll
Handbook of X-ray Photoelectron Spectroscopy
photoelectron binding energy. The Auger parameter, a,
is defined as,
or as the difference in binding energy between the
photoelectron and Auger lines. This difference can be
accurately determined because static charge corrections
cancel. With all kinetic and binding energies referenced
to the Fermi level, and recalling that
KE =hv - BE
(3)
MuJtip/~1 spliJlillg and slulU-up Jillts art generally aptettd ill/he pammaglittle SIales btlow:
Atomic No.
22
23
2'
25
26
27
28
29
.2
then...
KE A + BEp :::hv +a
1i1blc 4. Gcneral Guilfe 10 I'aramugllelic Species
(4)
or the sum of the kinetic energy of the Auger line and
the binding energy of lhe photoelectric line equals the .Auger parameter plus the photon energy. A plot showing
Auger kinetic energy versus photoelectron binding energy then becomes independent of the photon energy. I
In general, polari7.able materials, especially conductive
material~, have a high Auger parameter, while insulating
compounds have a lower Auger parameter.
d. Chemical information from Satellite Lines and
Peak Shapes
(I) Shakt-up Unts. These satellite lines have in·
tensities and separations from the parent
photoelectron line that are unique to each chemical
state (Figure 8, p. 19). Some Auger lines also exhibit radical changes with chemical stale that
reflect these processes (Figure 9, p. 20). With transition clements and fare earths, the absence of
shake-up satellites is usually characteristic of the
elemental or diamagnetic slates. Prominent shakeup patterns typically occur with paramagnetic
stales. Table 4 is a guide 10 some expected
paramagnetic states.
44
.7
58
59,70
7.
75
76
77
92
Pammagrctic States
Diamagnetic States
11(/1)11(111)
1i{lV)
V(/I, V(III), V(IV)
V(V)
C«II), C«III), C«IV), C«V)
C«VI)
Mn(l!). Mn(ltI). Mn(IV), Mn(V) Mn(VII)
F,(II), F.III1
"'Fo(CNI6. Fo(CO)dlo
Co(/I, Co(lII)
Coli, Co(No,hNHllJ,
KJCo(CNI6. Co(NHl)oO:
Ni(lI)
K1Ni(CN)4,
square planar complexes
C,(lI)
CuO)
Mo(IV), Mo(V)
M"VI, MoS" "'Mo(t}
R»(III), R,(lV), R»(V)
R.(II)
Ag(lI)
Ag(1I
Co(III)
Co(IV)
Pr. Nd, Sm. Eu, Gd, Tb, Dy.
Ho, Er. Tm, Yb compoollds
W(lV), W(V)
W(VI), W02. WCI4,
WC, "'W(CN),
Ro(Il), R.III), Re(IV),
Re(VII). Re03
R«V), Ro(VI)
Os(III), Os(IV), Os(V)
Os(lIl, Os(VI), 0s(V1II)
)«IVI
1«11I) .
U(III), U(IV)
U(VI)
(2) Multiplet Splitting. On occasion, the multiplet
splitling phenomenon can also be helpful in identifying chemical states. The 3s lines in the first
series of transition metals, for example, exhibit
separations characteristic of each paramagnetic
chemical state. The 3s line, however, is weak and
therefore is not oflen useful analytically. The 2p
doublet separation is also affected by multiplet
splitting, and the lines are more intense. The effect
becomes very evident with Co compounds where
the separation varies up 10 I eV. When first·row
transition metal compounds are under study, it is
m
l4
Perkin·Elmer COfl>oration
' " Physical Electronics Division
E. Data Interpretation
Handbook of X-ray Pbotoelectron Spectroscopy
useful
10
accurately record these linc separations
and make comparisons with model compounds.
(3) Auger line Shape. Valence-type Auger transitions (onn final-state ions with vacancies in
molecular orbitals. The distribution of the group of
lines is strongly affected, therefore, by the nature
of the molecular orbitals in the different chemical
states. Although little has yet been tabulated on
this subject, the spectroscopist should bear in mind
the possible utility of Auger line shapes.
4. Quantitative Analysis
-For many XPS investigations, it is important LO determine the relative concentrations of the various constituents. Methods have been developed for quantifying
the XPS measurement utilizing peak area and peak
height sensitivity factors. The method which utilizes
peak area sensitivity factors typically is the more accurate and is discussed below. This approach is satisfactory for quantitative work. For transition metal spectra
with prominent shake·up lines, it i.s best to include the
entire 2p region when measuring peak area.
For a sample that is homogeneous in the analysis
volume, the number of photoelectrons per second in a
specific spectra peak is given by:
are detected, and T is the detection efficiency for
electrons emitted from the sample. From Equation 5:
n ~ UfoGyl.AT
(6)
The denominillor in Equation 6 can be defined as the
atomic sensitivity factor, S. If we conr;idcr a strong line
from each of two elements, then:
nJ
(7)
n,
This expression may be used for all homogeneous
samples if the ratio SdS2 is matrix-independent for all
materials. It is certainly true that such quantities as (J
and A. vary somewhat from material to material (especially A), but the ratio of each of the two quantities 01/02
and llA.2 remains nearly constant. Thus, for any
" spectrometer, it is possible to develop a set of relative
values of S for all of the elements. Multiple sets of
values may be necessary for instruments with multiple
x-ray sources at different angles relative to the analyzer.
A general expression for determining the atom fraction
of any constituent in a sample, C1 , can be written as an
extension of Equation 7:
~
t ~ nfoGyl.AT
(5)
where n is the number of atoms of the element per cm3
of the sample, f is the x-ray flux in photons/cm2-sec, 0"
is the photoelectric cross-section for the atomic orbital of
interest in cm2, e is an angular efficiency factor for the
instrumental arrangement based on the angle between
the photon path and detected electron, y js the efficiency
in the photoelectric process for formation of
photoelectrons of the normal photoelectron energy, A. is
the mean free path of the photoelectrons in the sample,
A is the area of the sample from which photoelectrons
Perkin-Elmer Corporation
I~hysical Electronics Division
(8)
Values of S based on peak area measurements are indicated in Appendices E and F. The values of S in the
appendices are based on empirical data (CD. Wagner et
al. Surf Inierface Anal. 3, 211 (1981)) which have been
corrected for the transmission function of the
spectrometer. The values in the appendix are only valid
for and should only be applied when the electron energy
analyzer used has the transmission characteristics of the
SCA supplied by Perkin-Elmer. An example of the
application of Equation 8 to analysis of a sample of
E. D3ta Interpretation
Handbook of X-ray Photoelectron Spectroscopy
b. Transition metals, especially of the first series, have
widely varying and low values of y, whereas y for the
other elements is rather unifonn at about 0.8 eV. Thus, a
value of S detennined on olle chemical state for a transition metal may not be valid for another chemical state.
This effect can be minimized by including shake-up
peaks in the area measurement.
F Is
Atomic Concentration
Theoretical
C
33
F
Experimental
33
67
67
c. When peak imerferences occur, alternative lines must
sometimes'be used. The ratios of spin doublets (except
4p) are rather uniform, and the weaker of the pair can
often be substituted. The spectra of the elements should
be consulted, but caution must be exercised because the
spectra of the elements themselves can be different from
the spectra of their compounds.
F
Cis
.'
F
•
1100
o
d. Occasionally, an x-ray satellite from an intense
photoelectron line interferes with measurement of a
weak component. A mathematical approach can then be
used to subtract the x-ray satellite before the measurement.
Biooing f.Jlergy (tV)
Figuft /3. Quamiwlive analysis ofpoI)(lelrajluorotlhylene).
known composition, poly(telrafluoroohylene), is shown
in Figure 13.
The use of atomic senSItiVity factors in the manner
described will nonnally furnish semiquantitative results
(within 10-20%), except in the following situations:
The technique cannot be applied rigorously to
heterogeneous samples. It can be useful with
heterogeneous samples in measuring the relative number
of atoms detected, but one must be conscious that the
microscopic character of the heterogeneous system influences the quantitative results. Moreover, an overlying
contamination layer has the effect of diminishing the in~
tensity of high binding energy peaks more than that of
low binding energy peaks.
3.
For quantitative work, check the spectrometer operation
frequenlly to ensure that analyzer response is constant
and optimum. Auseful test is the recording of the three
widely spaced spectral lines from Cu. Measurement of
the peak height in counts-per-second should be made on
2o-voh-wide scans of the 2p312. LMM Auger and 3p
lines. Maintenance of such records makes it easy to
notice if an instrument change occurs that would affect
quantitative analysis.
5. Determining Element Location
Depth. There are four methods of Obtaining information on the depth of an element in the sample. The first
two methods described below utilize the characteristics
of the spectrum itself but provide limited infonnation.
The third provides more detailed information but is attcnded by cenain problems. The founh utilizes measurements at two or more electron escape angles.
3.
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HandbOOk of X-ray Photoelectron Spectroscopy
(I) The presence or absence of an energy loss peak
(3) Depth profiling can be accomplished using
controlled erosion of the surface by ion sputtering.
Table 5 lists some data on sputter rates as a
general guide. One can use this technique on organic materials, but few data are available for
calibration. Chemical states are often changed by
the sputter technique, but useful infonnation on
elemental distribution can slill be obtained.
or envelope indicates whether the emitting atoms
are in the bulk or at the surface. Because electrons
from sUlface atoms do not traverse the bulk, peaks
from the surface atoms are symmetrical above
level baselines on both sides, and the energy loss
peak is absent. For a homogeneous sample, peaks
from all elements will have similar inelastic loss
structures.
(2) Elements whose spectra exhibit photoelectron
lines widely spaced in kinetic energy can be approximately located by noting the intensity ratio of
the lines. In the energy range above approximately
100 eV, electrons moving through a solid with
lower kinetic energy are attenuated more strongly
than those with higher kinetic energy. Thus, for a
surface species, the low kinetic energy component
will be relatively stronger than the high kinetic
energy component, compared to that observed in
the pure material. The data for homogeneous bulk
solids can be compared with intensity ratios observed on unknowns to determine qualitatively the
distribution of the elemen! in the sample. Suitable
elemen~ include Na and Mg (Is and 15); In, Ga,
Ge and As (2pll1 and 3d); and Cd, In, Sn, Sb, Te,
I, Cs and Ba (3p," and 4d or 3d512 and 4d).
When the element is in a bulk homogeneous layer
beneath a thin contaminating layer, the characteristic intensity ratio is modified in the opposite
direction. Thus, for a pair of lines from subsurface
species, the low kinetic energy line will be attenuated more than the high kinetic energy line,
distorting the characteristic intensity ratio. By 0bserving such intensity ratios and comparing them
with the pure bulk elements, it is possible to
deduce whether the observed lines are from
predominantly sUlface-, subsurface- or homogeneously distributed material.
Table 5. Rtfative SpIltler Rala aI4,tV.
Ia:get
Si02
1.00
O!Xl
0.85
~
120
C,
1.<0
0.95
4.10
Tat.05
S;
:
Spu!lCT Rale
Al
A'
Another useful method of controlled erosion, especially of organic materials, is reaction with oxygen
atoms from a plasma. This tcchnique may also
change the chemical states in the affected surface.
Further, because the elements differ in their rates
of reaction with oxygen atoms, the rate of removal
of surface materials will be sample dependent.
(4) In XPS studies, the sample-mounting angle is
nOl usually critical, though it does have some effeci on the spectra. Very shallow electron take-off
angles accentuate lhe spectrum of any component
scgregated on the surface, whereas a sample
mounted al an angle normal to the analyzer axis
minimizes the contribulion from such a component. This effect can be used to esJ.imate lhe
depth of layers on or in the surface. This effect is
not limited to flat surfaces, because angular dependence is even observed with powders, though
the effects are muted. The spectrometer used to
oblain the spectra presented in this handbook in-
m
Perkin-Elmer Corporation
Physical Electronics Division ' "
27
E. Data Interpretation
Handbook of X·ray Photoelectron SpectrosCOI»)'
tegrates the signal over only a narrow range of
take-off angles.
It is possible to cbange the angle between the
plane of tbe sample surface and the angle of
entrance to the analyzer. AI 90" with respect to the
surface plane, the signal from the bulk is maximized relalive to that from the surface layer. At
small angles, the signal from me surface becomes
greatly enhanced, relative to that from me bulk.
The location of an element can thus be deduced by
noting how me magnitude of its spectral peaks
changes with sample orientation in relation to
those from other elements. The analysis depth may
be estimated by d =Asine, where d is the analysis
depth of the overlayer, Ais the inelastic mean free
path, and e is the take-off angle of the analyzed
electrons.
Perkin-Elmer SCAs permit angle-dependent
studies by simply varying the angle of the sample
surface with respect to the input lens of the
analyzer. The magnification of the lens detennines
the half-angle acceptance of the analyzer. An example of the information that can be gained
through the use of this capability is shown in Figure 14. Data were obtained at normal (near 90')
and grazing (near 15') take-off angles from a
silicon sample with a thin silicon oxide overlayer.
The observed intensity ratio of oxidized to elemental Si is much greater at the low take-off angle.
b. Surface Distribution. Many current XPS systems
have the capability (0 obtain data from areas as small as
30 IJI11 in diameter. This relatively high lateral resolution
allows for the acquisition of XPS maps which show both
elemental and chemical state information.
Si 2p
"'"
Si
Gnu,.
,.,.,
:
\
/\
110
96
BindiDg Energy (eV)
"'igurt 14. All Uilmpf~ of /he ~nhanctd surfaee sensilivity achkvtd by va,)'ing /he elte/ron take·offangle. A thin oxidt on silicon is enhallctd at the low
lakt-off(lllgit.
c. Insulating Domains on a Conductor. The occurrence of steady-state charging of an insulator during
analysis sometimes has useful consequences. Microscopic insulating domains on a conductor reach their
own steady-state charge, while the conductor remains at
spectrometer potential. Thus, an element in the same
chemical state in both phases will exhibit two peaks. If a
change is made in the supply of low-energy electrons
which stabilize the charge (as from the neutralizer filament) or if a bias is applied to the conductor, the
spectral peaks from the insulating phase will move relative to those from the conducting phase. For such
heterogeneous systems, this can be an extremely useful
technique. It makes it possible to determine whether the
elements that contribute to the overall spectrum arc in
the conducting phase, the insulating phase or both.
m
28
/1
Perkin-Elmer Corporation
\j!' Physical Electronics Dil'isioll
F. How to Use this Handbook
Handbook or X·ray Photoelectron Spectroscopy
F. How to Use this Handbook
gies by comparing the binding energy to the charts
with the standard spectra and with the tabulated
data in Appendix B.
1. Qualitative Analysis
Elemental and chemical identification of sample constituents can be perlormed by combining the infonnation
in the survey spectra with the binding energy tables of
Appendices G, Hand J.
(3) As suggested above, much about the chemical
state can be learned frol11 the magnitude and posi·
tion of shake-up lines as well as from the energy
and shape of valence Auger lines.
a. Identify all major photoelectron peaks by using the
line position tables in Appendix J.
b. Compare the elemental identifications with the
elemental survey spectra to see that line positions and
relative intensities are consistent. Also note the positions
of the Auger electron peaks.
Review Section E (pp. 16-28) to account for fine
structures such as energy loss lines, shake-up peaks,
satellite lines, etc., not identified in the handbook spectra
or energy tables.
Co
d, Identify any remaining peaks assuming lhey are intense photoelectron or Auger lines using Appendices G
or H.
e. Chemical stale identification can be determined from
high resolution spectra of the strongest photoelectron
and sharpest Auger lines.
(I) Correct binding energies for slatic charging of
insulators. When applicable, charge reference the
binding energy scale to the C Is phOioelectron
peak at 284.8 eV.
(2) Deteffiline the chemical state from the
measured shifts in the photoelectron binding ener-
Perkin-Elmer Corporation
Physical Electronics Division
"
(4) For the elemell~ F, Na, AI, SI, S, Cu, Zn, As,
Se, Ag, Cd, In, Sn and Te, the Auger parameter
tables in Appendix Amay prove useful. The Auger
line positions may be convened to kinetic energy
by sublracting from the pboton energy (AI =
1486.6 'V, Mg = 1253.6 eV). Note the locatiou of
the points for Auger kinetic energy and
photoelectron binding energy on the respective
elemental piaL. Proximity of the experimental
points to those of recorded chemical slates should
be considered probable identification. Note that
experimental error is much greater along the Auger
parameter grid than normal to the grid lines.
2, Quantification
The atomic sensitivity factors presented in Appendices E
and F are applicable to the Perkiu-Elmer Model 10-360
SCA and the Omni Focus III lens. A simp~fied expression to determine the atomic concentration of any element is given by Equation 8 (p. 25). However, the accuracy is limited by the assumptions made in Section
E.4 (p.25).
29
II. Standard XPS Spectra of the Elements
:
Standard Spectra of the Elements
This ste1iOll if I~ hnndbooi eM/aillS SUM)' spectra of 8/ elemellfs. high ~solufion spectra of the mo.ll ustful photot/Utfrlll lints, a d1alt of binding
tntrgies for each of Ihe oostrvtd plrmotlettmn and major Auger electron peaks, alld a phol«ItclrfJn chemicoI Slalt binding tntrgy CNIf/ jor tacit oj
Ille eJemtlJ/s. Used i'l combinatioll willi the appendices, Ihe survey spectra Oil! ill elemellIal idelllijicalion, while lire high-resolutiOil sl,eerra Gnd binding
trltrgy daln aid in Ihe idelJ/ijicalioJJ ofchemical Slale5.
Survey Spectra
Tk survey data include all of the lines which are normally useful. For
most elements, the survey data wele acquired with both a
mmochromatic Al x-I3Y source and a nonmooochromatic Mg Hay
source. WIlen survey sptCtlt for two compoonds are presented, the
monochromatic SOIJrce is used for both. The photon soorce fa each
survey is noted on the survey. TIle photoelectron and Auger lines for
the element of interest are identified. lines which occur d~ to olber
elements are only designated by the elemental symbol, and x-ray
S3lClliles and energy loss lines are not noted. Fa many elemenlS, tile
Auger peaks are presented in expanded form.
lk ordinate is left undesignated, bm the general conlours and intensilY ratios of the sJX=ctra are lypical of measuremenlS made using a
Perkin-Elmer ModellD-360 SeA with an Omni r"OCus lens.
:
High-Resolution Spectra
The high-resolution SJX=ctra of the most useful photoelectron peaks are
!X"tsented Unless otherwise nored, the high-resolution data were acquired using the same photon soorct as the survey on the sarrc page.
The binding energy of the main line is Jl)te<! and when awrc¥iate, !he
spin 0Tbi1 separation (&) is given. The lino from insulators were
charge-corrected to adventitioos hydrocarbon 3t284.8 eV.
The spectra of the inert gas atoms implanted in graphite or silicon
deserve special mcntiolL The high-resolution data often show an
asymmetric peak shape or a secord resolvable peak when a single
sytlll'OOric peak is expwell. The intensity of the second, high binding
energy peak is dcpeOOenl 00 the implantation energy and is
diminished at lower eneTgies. The spcctI3 are of inert gas atoms implanted at 4 kV.
Photoelectron and Auger Electron Line Position Tables
'J'b; photoclectron and Auger line position tables reflect the energies
reduced species, the measured values may differ by a few electron valls.
of the elemental peaks observed in this handbook. For oxidized or
Chemical State Binding Energy Tables
The binding energy tables hnve been constructed to renecl the general
chnnges in binding energy with change in oxidation state or chemical
environment. A more eXlensive listing wilh specific binding me'!)'
values for more than 1500 compounds is presented in Appendix B.
Perkin-Elmer Corporation
Physical Electronics Division
Abbreviations in the chemical slale database are as follows: acac =
acetyl acetonate; metallocene metal (C)H1h; Bu butyl; Et ethyl;
Me methyl; Ph phenyl; OAc acetate.
=
=
=
=
=
=
Lithium
Handbook or X·ray I)hotoelectron Spectroscopy
Li
Atomic Number
3
F
Li in LiF
Monochromated Al Ka.
F
:
·1
r'--1400
F
,
A
F
'; I
1000
1200
800
600
Binding Energy (eV)
400
200
o
Line Positions (eV)
Is =55.6 eV
Is
Pholoclccuoo Lines
j
60
Binding Energy (eV)
lQ
m
'II
Perkin-Ehner Corporation
Physical Electronics Division
HandbOOk of X-ray Photoelectron Spectroscopy
Lithium
Atomic Number
Li
3
F
Li in LiF
MgKa
'.
F
F
F
:
A
"
.
j
,
1000
1200
800
F
1: I
600
Binding Energy (eV)
Is Binding Energy (eV)
Compound Ty~
54
55
56
400
Is =55.6 eV
51
o
200
Is
U
LiBr
UC1
uF
LhO
LOH
UzCOJ
t.;,ro.
--
u.P,Q,
~
LiNbOJ
10
Perkin-Elmer Corporation
Physical Electronics Division
60
Binding Energy (tV)
~
50
Beryllium
Handbook of X-ray Photoelectron Spectroscopy
Be
Atomic Number
4
Monochromatcd Al Ka.
/~
1391l
1410
"
KVV
1370
Binding Energy (eV)
Ac
Ac
/
KVV
Ac
1400
0
1200
I
1000
800
.11
0
I
Fe
,
600
,j
.,~
400
200
"
o
Binding EnelgY (eV)
Line Positions (eV)
Is=111.8eV
Is
PbotoekctronLines
I,
112
Auger Lim
KVV
1384
1151
\
125
'"
(AI)
(Mg)
105
Bindins F.nergy (cV)
m
\M
Perkin-Elmer Corporation
Physical Electronics Division J
Handbook of X~ray Photoelectron Spectroscopy
Beryllium
Be
Atomic Number
4
Is
Mg KlX
KVV
1175
N
1155
Binding Enelgy (eV)
1135
Ar
F,
0
1200
1000
800
600
400
o
200
Binding Energy (eV)
I, Binding Energy (eV)
Compoundl'ype
III
112
113
)[4
JJS
116
1,= 1I1.8eV
117
I,
Ik
BoO
BeMo(1
BeRhtO.
1kF,
NaBeFl
Na2BeF4
\
'"
Perkin~Elmer Corporation
Physical Electronics Division
115
BiOOin& Energy (eV)
lOS
Boron
Handbook of X-ray Photoelectron Spectroscopy
B
Atomic Number
5
Is
Monochromated Al Ko.
KLL
\.
N,
1J>J
BilXlint &Iergy (eV)
1350
KLL
:
120)
N'
c
o
1400
1000
1200
800
600
Binding EneIg)' (eV)
N,
400
200
o
Line Positions (eV)
Is =189.4 eV
Is
f\
Photoelectron Lines
Is
189
Auger Lines
KLL
\
200
190
Binding Energy (tV)
1310
(AI)
Ion
(Mg)
180
m
1ft
\II
Perkin-Elmer Corporation
Ilhysical Electronics Division
HandbOOk or X-ray Photoelectron Spectroscopy
\
B
Atomic Number
5
I,
/,\
MgKa
Boron
KLL
KLL
No
\.
~
1Il0
Ill<!
BiDding Energy (eV)
No
~
.,
~
.,
C
JJ
,
No
•
1200
1000
800
600
Binding Energy (eV)
L
400
200
o
Is Binding Energy (eV)
ComlXlund Type
,
Ilorido
'N
'>0,
186
188
I~
NaBF4
NaBH,
H,ao,
Na 2B..{h. IOH,o
B1OH14
190
•
•
192
19'
1%
Is =189.4 eV
Is (\
III
•
'"
IOJ
Binding Energy (eV)
Perkin-Elmer Corporation
Physical Electronics Division
39
Handbook of X-ray Phntoelectron Spectroscopy
C
Carbon
Atomic Number
6
Is
C as graphite
Monochromalcd AI Ka
'''''
/
KVV
1200
BiDdiaS Energy (eV)
"
.
KVV
1400
,
1000
1200
.
800
-4
600
400
200
o·
Binding EneJgy (eV)
Is =284.5 eV
Line Positions (eV)
Is
Photoelectron Lines
Is
285
Auger Lines
KVV
'95
122J
(AI)
990
(Mg)
'85
Binding Entrgy (eV)
'"
40
'II'
Perkin-Elmer Corporation
Physical Electronics Division
Handtwok of X-ray Photoelectron Spectroscopy
Carbon
C
Atomic Number
6
Is
C as graphite
Mg Ka
~
KVV
1m
91<1
BiOOillg f.Dc:rgy (tV)
KVV
.r
:
"V
,
,
1200
1000
800
600
Binding Energy (eV)
400
200
o
Is Binding Energy (eV)
Compound Type
Carbide
280 282
284
286
288
290
292
Is = 284.5 eV
294
Is
eMboo
C with N
Cwith S
Cwith 0
,-
K,.,,,,,,,,,,,,,,,
"""
""""'"
""""""
C with 0
C with F
CHF
a;
a;
29l
"5
215
Bildill& Eatrzy (tV)
Perkin-Elmer Corporation
Physical Electronics Division
41
Nitrogen
Handbook of X-ra)' Photoelectron Spectroscopy
N
Atomic Number
7
Is
N in BN
KLL
Monochromated Al Ka.
\
1120
Binding Encrv (eV)
1160
lOW'
B
:
KLL
B
0
,
~
1400
1200
1000
800
600
Binding Energy (eV)
"\
c
400
200
0
Line Positions (eV)
Is =398.1 eV
Is
Pholoelectron Lines
Is
398
Auger Lines
KLL
)
"0
\
1107
874
(AI)
(Mg)
400
Binding Enetgy (eV)
m
42
W
I
Perkin-Elmer Corporntion
Physical Electronics Division 1
HandbOOk of X-ray Photoelectroo Spectroscopy
Nitrogen
N
Atomic Number
Nin BN
I'
J\
MgKa
910
B
7
KLL
•
\
B90
BilldiDg Energy (tV)
""
KLL
B
ftI
f)
.
I
J.
C
•
1200
I()()()
800
600
400
200
Binding Energy (eV)
o
Is Binding Energy (eV)
CO~nd Type
396
398
400
402 404
406
408
Is =398.1 eV
410
NHl
Nitride
Is
BN
~'"'
Cy",,,,,
Nitrites
Ammooium Sail
AZidt{N*NN*)
Azide (NN*N)
Nitrates
/'
Organic MatriJ:
410
Perkin·Elmer Corporation
Physical Electronics Division
m
\lI
400
Binding Eqy (tV)
390
Oxygen
Handbook of X-ray Photoelectron Spectroscopy
0
Atomic Number
8
o in Al203 (sapphire)
I'
Monochromaled AI Ka
KlL
~
990
Bindin& Energy (cV)
1030
\
KlL
9,.
.
~
IZOO
.
Al
..
,
14110
,
Al
"
.-J
" cI
2s
I
8110
600
Binding Energy (eV)
1000
L-
zoo
400
a
o
Line Positions (eV)
Is =531.0 eV
Is
f\
Pb~oeIeclron
Lines
531
2s
23
KLILI
KL1L23
1Ol3
999
7M
I'
Auger Lines
)
545
535
\
m
KLnL23
978
(AI)
745
(M81
S2S
Binding Energy (tV)
m
44
W
Perkin-Elmer Corporation
Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Oxygen
Atomic Number
0
8
Is
o in AI203 (sapphire)
KLL
Mg Ka
~
\
,.,
KLL
120
Binding EncIIY (eV)
fi
AI
Al
~,
N
,
N
,
IIXKJ
1200
800
•
600
Bindiog Energy (eV)
400
C
2s
""
200
Is Bioding Energy (eV)
Compoulld Type
S28
529
530
53]
Is
532
533
•
o
A
534
Metal Oxides
"'0,
S;o,
HyIloX~
Phosphates
Nitrates
Sulfates
c.mooates
Odorates
)
AI,o,
Silicones
Perkin.Elmer Corporation
Physical Electronics Division
'45
m
Binding Emgy (eV)
\
525
Fluorine
Hanlbook of X-ray Photoelectron Spectroscopy
F
Atomic Number
9
I,
Fin LiF
Monochromated AI Ka
Kil.
\
'45
'"
""
Binding Energy (tV)
KLL
..
.1 .
A
'-.
1400
Is = 684.9 eV
1200
1000
~r
800
600
Binding Energy (eV)
400
200
o
Line Positions (eV)
Is
Photoelectron Lines
I,
685
h
30
Auger Lines
KLILn
.58
\
700
625
KLn L23
832
599
(AI)
(Mg)
680
m
Perkin-Elmer Corporation
\j! Physical Electronics Division
I
Han dl.""k or X-ray Photoelectron Spectroscopy
IJ\}\I
Fluorine
F
Atomic Number
9
's
Fin llF
MgKa
Kll
"
KLL 615
595
575
Binding EllCrgy (eV)
:
~
.
j
,
1000
1200
800
600
Binding Energy (eV)
Is Binding Enelgy (eV)
C'_"IT,,"
6IJ
684
615
686
617
Li"
d
688
689
400
Is =684.9 eV
o
200
Is
KF
UF
N,F
&F,
MgJ;
AIF)·3H1O
NaBF4
NaN iF6
P{C"~F,)
EJ.NHillF)
Ph)PI3F)
Perkin-Elmer Corporation
Physical Electronics Division
,.
Neon
Handbook of X-ray Photoelectron SpectroscoPJ
Ne
Atomic Number 10
c
Ne implanted in graphite
Momx:hromated AI Ka
KlL
~~j
no
Binding Energy (eV)
""
Is
.'
.
C
KlL
.--J\.
v1
,
~C
,
1400
1000
1200
800
600
Binding Energy (eV)
4110
Is
Is =863.1 eV
o
200
Line Positions (eV)
Photoelectron Lines
Is
2s
863
41
2p
14
KLILI
KL]L2J
KLnLn
Auger Unes
ns
492
\.
875
865
702
(ffJ
(AI)
469
436
(Mg)
855
Binding Eottgy (eV)
..
m
Perkin-Elmer Corporation
\j! Physical Electronics Division
Han dl.n"k
uvu or X-ray Photoelectron Spectroscopy
Neon
Ne
Atomic Number 10
c
Ne implanted in graphite
KlL
MgKa
'\.
~N
><Xl
'll
Bindillg Encq;y (eV)
C
.f1
Is
KLL
:
-'\
,
,
1200
800
1000
ac
600
Binding Energy (eV)
400
200
o
Is Binding Energy (eV)
Compound Type
Ne in Ag
Ne in Au
Ne in Cu
Ne in Fe
Ne in gnphile
861
862
863
- -
Is=86J.leV
864
Is
/
j
'"
Perkin.Elmer Corporation
PhYSical Electronics Division
..,
Binding Enttty (eV)
49
Sodium
Handbook of X-ray Photoelectron Spectroscopy
Na
Atomic Number 11
MonochromaLed AI Ka
KU.
Is
~
,..
53.
Bindinz Etcrgr (e V)
-
...
KU.
:
2s
,
2,
•
1400
1200
1000
.I
800
600
400
lA
200
o
Binding EneIgy (eV)
Line Positions (eV)
Is
Photoeleclron Lines
Is
1012
2,
2s
64
31
AUger Lines
KLIL23
'32
299
108'
so
1075
Binding &le:IxY (eV)
KLnLn
493
(AI)
260
(Mg)
1065
If'
W
Perkin-Elmer Corporation
Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Sodium
Atomic Number
Na in NaCI
Monochmmaled AI Ka
Na
II
Is
KIl.
./'
--JV
,'"
'-
""
BilWilll Enqy.(eV)
CI
KIl.
a
a
L/
~
,
~L-J
,
'-
,
1400
1200
1000
800
600
Binding Energy (eV)
400
1070
1071
2p
200
Is Binding Energy (eV)
ComlXlund Type
2s
l1 o
Is
1072
Na in NaCI
1073
N.
Is= 1072.1 cV
N.I
NoB,
N.a
No!'
No,cQ,
Na2S2OJ
Na,sQ,
....p,o,
NaHzP'Ch
Mol Sieve
tOO
11m
Bindill& Energy (eV)
Perkin·ELmer Corp<lration
Physical Electronia Division
\
tOO
Magnesium
Mg
Atomic umber
12
Is
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Ka
KLL
KU
J'~
A
340
Binding Energy (eV)
390
~
,
J
290
,
1400
1200
I(XX)
2s
2,
~
800
600
400
.>!
.I
o
200
Binding Energy (eV)
Line Positions (eV)
2p=49.8eV
2p
Photoelectron Lines
Is
1303
2s
89
2,
50
Auger Lines
KLnL2l
301
(AQ
\
68
60
50
Binding Energy (eV)
(Mg)
40
m
Perkin-Elmer Corporation
' " Physical Eledronics Division
l..n"k of X-ray Photoelectron Spectroscopy
»an d~
Magnesium
Mg
Atomic Number
12
Mg Ka
KLL
"'-on from 2p
KLL
2p
o
"
1000
1200
800
600
Binding Energy (eY)
2p Binding Energy (eY)
Compound Type
48
Mg
Mg,C,
M&JBh
MgF,
Mg(OHn
MgAhO.
49
50
51
zoo
400
2p =49.8 eY
2p
•
....
--
\
so
Binding Enero' (tV)
Perkin·Elmer Corporation
Physical Electronics Division
o
..
53
Handbook of X-ray Photoelectron Spectroscopy
Aluminum AI
Atomic Number 13
"
Monochromaled AI Kn
2p
At
:
At
I
,
• )~
•
1400
1200
1000
800
600
Binding EneJgy (eV)
400
o
Line Positions (eV)
2p
2p = 72.9 eV
200
Photoelectron Unes
"
118
2p
73
Auger lines
LnMlMn
1419 (AI)
1186
8l
71
(M&>
65
Binding EncliY (tV)
m
54
W
Perkin-Elmer Corporation
Physical Electronics Division
HandbOOk 01' X-ray Photoelectron Spectroscopy
Aluminum AI
Atomic Number 13
MgKa
2s
.1 )
_~
..
2p
i\J\
1200
1000
800
600
Binding Energy (eV)
400
200
o
2p Binding Energy (eV)
COmpound Type
AI
AlAs
AIGaAs
"Alii,
Halides
72
73
74
75
16
AI in A1J:0) (sap~rt)
Mooochromated AI Ka
11
••
All;
2p =74.4 eV
•
Oxides
AlA Apphrro
AIA~ph.
Ali>J, gamma
AIDOH, boehmite
)
85
75
Binding Energy (eV)
m
Perkin·Elmer Corporation
Physical Electronics Division \jl
65
Silicon
Si
Atomic Number
14
Handbook or X·ray Pholoelectron Spectroscopy
2s
2p
MOllochromated AI Ka
,
.
"
LMM
.___ 1' -Al) ¥~I
:
,
d
t400
1000
1200
800
600
Binding EnelEY (eV)
400
200
o
Line Positions (eV)
2p : 99.3 eV
2p
Photoelectron Lines
2s
2p
151
99
Auger Lines
L2JM23M23
1394
1161
110
56
(AI)
(Mg)
100
Binding Energy (tV)
Perkin-Elmer Corporation
(J) Physical
Electronics Division
Handbook nr X·",y Photoelettron Spetlros",py
Silicon
Si
Atomic Number 14
2,
MgKa
II., IMM
1000
1200
800
600
400
200
o
Binding Energy (eV)
2p Binding Energy (eV)
Compoo.. Tl'P'
SilicKles
smcoll
98
101
10<
Si in SiCh
Monochrornaled Al Ka.
2p
•
2p = IOJ.J eV
Carbides
Nitrides
S~~ (Silanes)
S~icates
•
smca
Perkin-Elmer Corporation
Physical Electronics Division
m
\M
)
II'
\
100
Binding Ene!gy (tV)
90
Handbook of X-ray Photoelectron Spectroscopy
Phosphorus P
Atomic Number 15
2p
LMM
Monochromated Al Ka
\
1340
1310
1400
Binding Energy (eV)
LMM
1400
1200
1000
800
600
400
o
200
Binding Energy (eV)
Line Positions (eV)
2pll2
2plI2 =129.9 eV
A=O.84eV
2s
188
2p112
2P3t2
3s
131
130
14
Auger Lines
L,JMnM2J
1367
1134
140
130
(AI)
(Mg)
120
Binding EneJgy (tV)
if\.
W
l)erkin·Elmer Corporation
Physical Electronics Division
of X·ray Photoelectron Spectroscopy
Ban dl.""k
IJVV
Phosphorus P
Atomic Number 15
MgKa
2p
LMM
.15
LMM
\
1170
1200
1140
Birding Energy (eV)
1000
800
1110
600
Binding Energy (eV)
2p Binding Energy (eV)
Comr-ound Type
128
129
130
131
132
133
134
400
200
2Plil = 129.9 eV
135
o
2Plll
6=O.84eV
P
P(rod)
GoP
loP
PIospha"
1'yrophospM"
M~aph0sph3te
•
PcOlo
Ph,p
Ph,PSH
(PhOJ,PO
/
140
\
130
120
Binding Energy (eV)
Perkin-Elmer Corporation
PhYsical Electronics Division
<n
Sulfur
Han~book
S
of X-ray Photoelectron Spectroscopy
Atomic Number 16
J\
Monochromated AI Ko:
'"
LMM
,
2s
\
1370
1310
'340
Binding EnertY (tV)
LMM
/
f-.rJ
0
,
,
1400
1200
1000
800
600
Binding Energy (eV)
~w
o
200
400
Line Positions (eV)
2plIl' 164.0 eV
2plll
!J.= Ll8eV
Photoelectron Lines
2s
228
2plfl
165
2PY2
164
3s
18
Auger Lines
L2JM23 MU
I7S
,.
'65
Binding Enetgy (eV)
IJJ6
(AI)
1I0J
(Mg)
'55
m
W
Perkin-Elmer Corporation
Physical Electronics Division
HandbOok of X~ray Photoelectron Spectroscopy
Sulfur
S
Atomic Number 16
1200
1000
800
600
Binding Energy (eV)
400
o
200
2p312 Binding Energy (eV)
Compound Type
160
163
166
S
Sulfide
Sulfite
SulFate
SF,
SO,
Thiophene
Mercaptan
Cysteine
SulFone
I
•
169
172
175
2p312 = 164.0 eV
118
6= 1.18eV
•
\
175
16'
1S5
Binding Energy (eV)
Perkin.Elmer Corporation
Physical Electronics Division
m
'II
61
Chlorine
Handbook of X-ray Photoeleclron Spectroscopy
CI
Atomic Number 17
K
Clin KCI
Mooochromated AI Ka
LMM
(V
,
2,
11JlO
1330
BindingEMgy(eV)
K
2s
LMM
~
K
/
W,.J
1400
~l--AJ
1000
1200
~
v,
,
800
600
200
400
3,
o
Binding EneJgy (eV)
Line Positions (eV)
2pYl =198.5 eV
2p,.
A=L60eV
Photoele<:tron Lines
2s
271
lpln
20t
2p,.
199
j,
11
3,
6
Auger Lines
L23 M23M23
1304
1071
\
21l
WI
(AI)
(Mg)
191
Billding FJJergy (eV)
Perkin-Elmer Corporation
(J) Physical
Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Chlorine
Cl
Atomic Number 17
CI in KCI
MgKa
Compound Type
Alkali Chloride
C"Ch
Ni01
PdCh
KllrC"
Pt{NHJhCh
I'trchlorate
KCIQ,
"'00.
4Ii,Q
~CH,'£Hal
K
IMM
2plI2 Binding Energy (eV)
202 204 2M
198 200
-.•
~
•
2pll2
210
2pll2
=198.5 eV
!J.=J.60eV
• ••
r
Perkin-Elmer Corporation
PhvsiC3\ Rlectmnics Division
208
)
2lS
""
Binding Enttgy (eV)
(I)
\
I"
Argon
Handbook of X-ray Photoelectron Spectroscopy
Ar
Atomic Number 18
51
Ar implanted in Si
Monochromaled AI Ka
51
.
2p
51
2s
,
I , )
lMM
1400
3,
1000
1200
800
600
Binding Eoogy (eV)
400
o
200
Line Positions (eV)
2P31l = 241.9 eV
6=2.12eV
PhOl:oelectron Lines
2s
320
2pIIZ
2PJn
35
244
242
24
Auger Lines
LnM,)M13
1272
1039
)
215
'45
(AI)
(Mg)
235
Binding fJlergy (eV)
m.
Perkin-Elmer Corporation
\jI Physical Electronics Division
Han dbo ok of X-ray Photoelectron SpectroscollY
Argon
Ar
Atomic Number
s;
18
s;
Ar implanted in Si
s;
Mg Ko:
1\
2p
2,
I
'lJ
3,
1200
1000
800
600
Binding Energy CeV)
2p3I1 Binding Energy CeV)
Compound Type
Ar in Ag
Ar in Au
Ar in eu
Ar in PI
Ar in graphite
Ar inSi
240
241
2pll2
242
400
o
200
=241.9 eV
fl:;;2.12eV
--
P1n
2
A
\
J
2.\5
245
~
235
Binding EneJgy (eV)
Perkin-Eitner Corporation
Physical Electronics Division
65
Potassium
Handbook oIX-ray Photoelectron Spectroscopy
K
Atomic Number 19
2p
LMM
Monochromated AI Ko:
124{}
1280
1100
Binding Energy leV)
LMM
3p
"
1400
1000
1200
800
600
Binding Energy (eV)
400
o
200
Line Posilions (eV)
2plI2
2Pl12 ~ 294.4 eV
Ii = 2.80 eV
Photoelectron Lines
2s
380
2PJn
2pln
297
294
3s
35
3p
19
Auger Lines
LnM23M23
JIO
1239
(AI)
1006
(Mg)
JOO
Binding fJltlly (tV)
m
66
\lI
Perkin-Elmer Corporation
Physical Electronics Division
HandbOOk or X-ray Photoelectron Spectroscopy
Potassium
K
Atomic Number 19
Kin KCI
Monochromated Al Ka
CI
2s
a
a
LMM
:
L..,.,J
1400
,
1200
1000
3p
j'V
.
~
800
600
Binding Energy (eV)
400
a
:k
B,
I V
200
0
2p3I1 Binding Energy (eV)
Compound Type
291
292
293
294
KinKO
295
2P3l1
2py, = 292.9 eV
•
K
Halides
KCN
IJ. = 2.77 eV
KNo,
KCJo,
KC1O<
K}PO~
K.P,Q,
K>OO,
K,o,o,
Perkin-Elmer Corporation
Physical Electronics Division
•m
\lI
)
JlO
300
Binding Energy (eV)
v
\
290
Calcium
Handbook or X-ray Photoelectron SpectroSCOP}'
Ca
Atomic Number 20
2,
Monochromaled Al Kn
LMM
2s
1175
1200
1225
Biodin! Energy (eV)
LMM
3,3,
a
1400
1000
1200
800
600
Binding Energy (e V)
o·
200
400
Line Positions (eV)
2plIl = 346.7 eV
1I = 3.60eV
2plll
Photoelecuoo Lines
2s
440
2p1l2
3S I
2p3ll
341
3s
45
3p
26
Auger lines
L2J M23 M23
lt9)
(AI)
964
351)
1M,)
340
Binding fJlerzy (cV)
m
68
'II
Perkin-Elmer Corporation
Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Calcium
Ca
Atomic Number 20
0
Ca in CaCO)
Monochromated Al Ka
2PJn
2P1I2
.
IMM
0
---..A
,
2s
C
. ---"'\
Jp
3s
_I
1400
1000
1200
800
600
Binding Energy (eV)
2Pl1l Binding Energy (eV)
Compound Type
345
c.
CaS
each
CoF,
346
347
•
34a
349
400
o
200
Ca in CaffiJ
2Pl1l =346.6 eV
A=3j5eV
CaQ
CaCOl
C'NO,),
C.c.o.
''''"'''
CaMo04
C.so.
CaJSi)O,
\
3JjJ
Bindillg Enc:tu (tV)
Perkin-Elmer Corporation
Physical Electronics Division
m
W
Scandium
Handbook of X-ray Photoelectron Spectroscopy
Sc
Atomic Number 21
2p>2
Monochroma,oo Al Ka
lMM
117<)
1100
Binding Energy (tV)
lMM
2s
3p
3,
14110
1000
1200
2plI2 =398.6 eV
8110
600
Binding EnelgY (eV)
400
o
2110
Line Positions (eV)
2p>2
6 = 4.87 eV
Photoelectron Lines
2s
499
u
2p312
399
3s
51
3p
29
Auger Lines
\
410
2pln
404
400
Binding Enagy (eV)
LM23 M2)
L,MnM<, I'P)
1149
1118
916
885
IA1)
IMg)
390
'------
----.J
m
W
Perkin-Elmer Corporation
Physical Electronics Division
I
I
Handbook of X-ray Photoelectron Spectroscopy
Scandium
Sc
Atomic Number 2]
2pyz
lJ,iM
MgKa
.
2Pl12
2s
~
/~
I•
~\
LMM
)
...
1200
,
'- '"
•
"BiDding En(flY (tV)
I()()()
3.
I
.1.
870
600
800
3,
A<
400
200
o
Binding Energy (eV)
2plI2 Binding Energy (cV)
Compound Type
398
399
5<
5<N
&,0,
<1S«C,",l>
SqC,",XCoH,l
400
401
402
Sc in &203
Monochromaled AI Ka
2pll2
2pll2 = 401.8 eV
A=4.4eV
•
410
\
400
390
Binding Energy (tV)
Perkin-Elmer Corporation m
Physical Electronics Division \.&I
"'
Titanium
Handbook of X-ray Photoelectron Speclrnscop)'
Ti
Atomic Number 22
Monochromated AI Kll
f\
IIlKI
'.
lMM
1050
1065
Binding Encrzy (cV)
2s
LMM
I
3p
3,
" "
1400
1200
1000
2pll2 =454.1 eV
800
600
Binding Energy (eV)
400
200
0
Line Positions (eV)
2plI2
A =6.17 eV
Photoelectron Lines
2s
561
1
...
Binding Enetgy (tV)
2p3J2
454
\
4"
LM2)Mn
11198
865
3p
33
L}fI-12JM~s (II')
1068
(AI)
83)
(Mg)
m.
72
3s
59
Auger Lines
1------470
2pln
460
'II
Perkin-Elmer Corporation
Physical Electronics Division
HandboOk of X-ray Photoelectron SIJcctroscopy
Titanium
Ti
Atomic Number 22
2Pl11
Mg Kll
LMM
2pII2
,
2s
A
~'/
3p
,
1000
1200
800
A,
A,
,
3,
-.1
•
600
Binding Energy (eV)
400
o
200
2Pln Binding Energy (eV)
Compound Type
••
453 454
TI
liB~
TIN
liCI4
no
T~
BaTiOl (cubic. tetra.
CaTIOl
PbytOl
455
456 457
459
Ti in TIOz
MonochrollUllcd AI Ka
460
2p3l.!
2pll1 • 458,& eV
I
•
Metalloctne
T
(J)
!J. = 5.54 eV
•
•
•
SmOl
Perkin-Elmer Corporation
Phvsical Electronics DiYision
458
T
/
<1.
Bind:il~
...
\
E.iqy (eV)
450
Vanadium
Handbook of X-ray Photoelectron Spectroscopy
V
Atomic Number 23
2plI2
Monochromated Al Ku
'\
,
LMM
~
lOIS
1030
2Pl12
1(0)
Binding Energy (cV)
LMM
1\
/
2,
A
~t)
3p
,
,
1400
1000
1200
M
800
600
3s
M
,
400
j
o
200
Binding Energy (eV)
2P312 =512.2 eV
Line Positions (eV)
2plI2
!:.l.= 7.64 eV
Photoelectron Lines
2s
627
2Pl12
520
2P3f2
512
3s
66
3p
37
Auger Lines
535
74
51S
Binding l!nergy (eV)
LlMnM4S (I p)
1014
L3 M4S M4S
977
(AI)
781
744
(Mg)
495
Perkin-Elmer Corporation
(I) Physical
Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Vanadium
V
Atomic Number 23
2plIl
MgKa
\
LMM
LMM
~
,
~
795
2pln
185
Binding Fne~y (tV)
115
2s
M-J
/
3p
,
1200
1000
600
800
3!'
'" '"
,
400
o
200
Binding Energy (eV)
o Is
2pY2 Binding Energy (eV)
Compound Type
512
513
V
VB,
VN
Oxide
VOCb
VOS04
Vanadate
K,VICN,
V(acae)3
VO(acac)l
Melallocene
514
515
516
517
Vin V1Js
Monochromated AI Ka
518
2plll
2PJa=511.4eV
•
D.=7.6eV
/
535
LA
~
\
520
Binding Ene~y (eV)
Perkin.Elmer Corporation
Physical Electronics Division
505
Handbook or X-ray Photoelectron Spectroscopy
Chromium Cr
Atomic Number 24
2"",
Monochromated AI Ka
LMM
'"
,,,
""
BiOOing ~ (tV)
LMM
2,
I
3p
3,
Ac
0
1400
1200
800
1000
600
Binding Energy (eV)
Ac
400
200
0
Line Positions (eV)
2PJn =514.4 eV
A=9.WeV
Pholoelet\ron Lines
2s
696
2pln
583
2J>3I2
574
3s
75
3p
'3
Auger Lines
L3MnM4S ('P)
959
726
\
5"
L3~i45M.i5
917
684
(AI)
(Mg)
510
Binding Energy (tV)
m
W
Perkin-Elmer Corporation
Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Chromium Cr
Alomic Number 24
2P312
'\
MgKa
LMM
LMM
2pln
'"
\.
125
110
Rindilll F.nagy (eV)
h
tJ
3p
3,
M
1200
I ()()()
800
600
400
Ac
A
o
200
Binding Energy (eV)
2p312 Binding Energy (eV)
Compound Type
C,
574
I
Cr Nitride
CtBrl
00,
Oxide
C,F,
U(OH),
CcOOH
K,o,Q,
I(,U(CN'
Cr(acacb
Perkin-Elmer Corporation
Physical Electronics Division
576
578
Cr in Cr203
580
MonochromalCd AI Ka
582
2p312
2P3i2 = 576.9 eV
I
•1':'-.
••
'•"
A::: 9.8 eV
I
595
570
Binding Energy (eV)
77
Manganese
Handbook of X-ray Photoelectron Spectroscopy
Mn
Atomic Number
25
21'>2
LMM~~
Monochromated Al Ka
\..
2pII1
90S
Bindint Enttgy (eV)
""
""
LMM
1\ /\vU
3p
Js
J.
fu
1400
800
1000
1200
600
400
o
200
Binding Energy (eV)
Line Positions (eV)
2Pl11
2pll1 = 639.0 eV
6 = 11.05 eV
Ptlotoeb:tronLines
l'
2s
2Pll1
2m
7fB
650
639
3s
83
3p
48
Auger Lines
\
645
L23MnMn
944
L3M2}M4~
L3 M4S M45
900
JIl
667
852
619
(AI)
(Mg)
630
Binding Enetgy (eV)
It'
78
\J!
Perkin-Elmer Corporation
Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Manganese
Mn
Atomic Number
MgKa
25
U'M
LMM 2pj
\
685
610
BiJdng fJlcqy (eV)
655
3,
3,
1200
1()()()
800
600
Binding Energy (eV)
2PlI2 Binding Energy (eV)
Com",,,,,, 1)""
638
639
Mn
640
641
642
643
644
645
400
200
o
Mn in Mn02
Monochmmaled Al Ka
2plIl
2Plll = 642.1 eV
MnS
A=ll.1eV
MnCh
MnFJ
MoO
Mn,Q,
MoJO.
MnD,
MnOOH
MnSQ,
M~C,J-t,n
•
Perkin-Elmer Corporation
Physical Electronics Division
'45
BindiDg E1q)' leV)
6JO
Iron
Handbook of X-ray Photoelectron Spectroscopy
Fe
Atomic Number 26
Monochromalcd Al Ka
LMM
2plI2
770
LMM
Ilinding Ellergy (eV)
3p
3s
1400
I()()()
1200
400
800
600
Binding Energy (eV)
o
200
Line Positions (eV)
2PJn = 707.0 eV
2p3ll
I:J. = 13.10 eV
Photoelectron lines
2s
845
2Pln
12Q
2P3n
7tr1
3s
92
3p
53
Auger Lines
lMuMn
L3M.(sM45
784
(AI)
888
\.
740
1W
551
655
(Mg)
700
Binding fJlergy (eV)
m
RO
W
Perkin·Elmer Corporation
Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Iron
Fe
Atomic Number 26
MgKa
LMM
5"
565
Binding Energy (eV)
2,
LMM
Jp
1200
1000
800
600
400
200
o
Binding Energy (eV)
2p312 Binding Energy (eV)
CompoundTypc 706
707
708
709
710
711
712
Fe in FC20J
Monochromalcd Al KCt
713
F,
reS
Fclh (markasile, pyr)
FcCl,
FeCl)
•
2p", =710.9 eV
FeO
6= 13.6eV
•
Fe,O)
I
FcOOH
FeS04
•
K3Fe(CNj(,
K4fe(CNj(,
Perkin-Elmer Corporation
Phv~;"'!11 Ji'1"I'Io.... n;l'<' ni",<,i,,"
m.
u.J
•
740
120
Binding Energy (eV)
700
Cobalt
Handbook nr X-ray Pboloeleclron Spectroscopy
Co
Atomic Number 27
Monochromated AI Ka
'710
Binding Energy (tV)
735
685
LMM
3p
A,
1400
1200
1000
800
600
Binding Energy (eV)
o
200
400
Line Positions (eV)
2"", ; 778.3 eV
Pbocoelectron Lines
A= 14.97 eV
2s
925
2pln
793
2PJn
778
3s
101
3p
60
Auger Lines
Ljt1nM23
838
605
815
710
L:zM23Mn
831
598
L)MnM45 (I P)
m
544
LJMl]M" <'PI
LJM<JM<,
nt
538
698
465
(AI)
(M8)
(AI)
(M8)
Binding Energy (eV)
m.
W
Pcrkin~Elmcr
Corporation
Physical Electronics Division
Handbook nf X-ray Photoelectron Spectroscnpy
Cobalt
Co
Atomic Number 27
2plI2
Mg Ka.
\.
500
450
415
Binding Entl!y (eV)
2s
\1>IM
3p
Js
1200
600
Binding Energy (eV)
1000
o
200
400
Co in 00
Co
Col',
<:of,
CoO
•
C",o.
C",o.
Mooochromated Al Ka
•
•
CoOOH
Co(OHh
CoSo.
-
Co(NI'hhCh
Perkin-Elmer COrtlOration
Phv..i('!'I1 li'1Pl"trnniM: ni11;"inn
IYo\.
W
2p"
2plI2 = 780.4 eV
1i=ISleV
l.~:;t
710
815
Binding Ene!gy (tV)
Nickel
Handbook of X-ray Photoelectron SpectroscoPJ
Ni
Atomic lumber 28
2pYl
Monochromated AI Ka
LMM
635
660
610
Binding Ene!gy(eV)
LMM
3p
3,
1400
1200
woo
400
600
Binding Energy (eV)
800
o
200
Line Positions (eV)
2pYl =852.7 cV
!J. = l7.27 eV
2pYl
Photoelectron Lines
2s
1009
2P112
870
211312
853
35
III
3p
67
Auger Lines
L3M23~5 (I p)
712
479
LIMnMn
772
539
LJM1JM4S ep) L2MnM45 (I p)
865
Binding Ene'&Y (eV)
840
7116
473
641
408
m.
L3M4SM4S
624
391
(AI)
(Mg)
Perkin-Elmer Corporation
\U Phvsical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Nickel
Ni
Atomic Number 28
2PJt2
Mg Ka
LMM
430
405
Binding Enetgy (eV)
2s
380
LMM
Jp
3,
1200
1000
800
600
400
o
200
Binding Energy (eV)
2P3a Binding Energy (eV)
Compound Type
852
853
854
855
856
857
Ni in NiO
858
2plI1
2pll1 = 853.8 eV
Ni
Silicides
!J. = 11.49 eV
NiS
!lalides
NiQ
Ni203
Ni(N03n
Ni(acac)l
Ni(OAcn·4Hi>
Ni(dimclllylglyoxim)l
•
890
865
Binding Enetgy (eV)
841)
Copper
Handbook of X-ray Photoelectron Spectroscopy
Cu
Atomic Number 29
2plI2
Monochromated Al Ka
LMM
lSO
S60
570
Binding Energy (eV)
LMM
3p
35
1400
1200
800
1000
a
200
400
600
3d
Binding Ene<gy (eY)
Line Positions (eV)
2pll2 =932.1 eY
2pll2
/1 = 19.80 eV
Photoelectron Lines
28
1097
2PIn
953
2P312
933
35
123
3pll2
77
3p312
75
Auger Lines
L3MnM4s t'P)
648
415
f------/
\..::=====~-"\~
925
970
L3M23M45 ep) L2M23M4~ (Ip)
640
401
(AI)
(MgI
L2M4sM.ts
628
395
548
(AI)
315
(Mg)
Binding Energy leV)
it"'\.
\.U
Perkin-Elmer Corporation
Phvdf'!ll trl.."t.....
"i,..'" T'li"idnll
Handbook of X-ray Pholo~edron SpeclroscoPl'
Copper
CD
Atomic Number 29
2pyz
MgKa
LMM
2pln
32'
JJI
Binding Energy (eV)
""
2s
LMM
~/"
~
3p
3s
~
1200
800
1000
2"", Binding Energy (eV)
Compound Type
93 I
C,
CUlS
C..s
C..cl
932
933
••
934
400
600
Binding Energy (eV)
935
936
I
200
fl
3d
o
Cu in CUO
Monodlromated AI Ka
2pyz
=933.6 eV
A=19.geV
C,o,
C,lO
C,O
Cu(OHh
C..so.
C"OA,"
Cu(saHcylaldOJ:ime)
910
Binding Enagy (eV)
Perkin-Elmer Corporation
Physical Electronics Division
m
'II
.7
Zinc
Handbook of X-ray Photoelectron Spectroscopy
Zn
Atomic Number 30
2m
Monochromated Al Ka.
LMM
'\
515
480
Binding Energy (tV)
2plI1
LMM
1\
2s
J.
1200
1400
./
~~
1000
3p
I
400
800
600
Binding Energy (eV)
3d
3,
o
200
Line Positions (eV)
2PJn =1021.8 eV
Photoelectroo Lines
2PJn
6 = 22.91 tV
2s
1195
2Plf2
2plI2
35
1045
1022
140' 91
3pln
3pYl:
3d
89
10
Auger Lines
2Plfl
~
L,M"M<> ('P)
L,M""n
660
427
L,M""'5 <'PI L2Mnt-45 ( lp)
'-./
573
1010
1001
582
349
340
559
326
(AI)
(Mg)
LJM4"""
L2~5M4S
495
262
239
4n
(AI)
(Mg)
Binding EneJgy (tV)
it\.
W
Perkin·Elmer Corporation
Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Zinc
Zn
Atomic Number 30
2plI2
MgKa
LMM
285
250
Binding Energy (eV)
LMM
3p
l' j
!Ooo
1200
800
600
Binding Energy (eV)
400
3d
o
200
2plI2 Binding Energy (eV)
Compound Type
1020
1021
1022
1023 1024
2PJa' 1021.8 eV
!J.:= 22.97 eV
Phosphide
Halides
",,0
Zn(acach
2p"
•
•
(Me.NhZnBr~
Znso4
Zn 4Sb07(OHh . 2H20
ZnCf204
ZnRh204
11l6O
1010
Binding Energy (eV)
Perkin-Elmer Corporation
Physical Electronics Division
89
Gallium
Handbook of X-ray Photoelectron Sp<etroscopy
Ga
Atomic Number 31
lpJ12
Monochromated AI Ka
LMM
4!'
430
410
Bindllg F.neru (cV)
LMM
2s
3d
3p
3s
1400
1200
1000
800
600
400
o
200
Binding Energy (eV)
Line Positions (eV)
2pJl2= 1116.1 eV
Pb:>toelecum Lines
Ii =26.84 eV
2pII2
2s
2pln
2pYl
3s
3pln
3p312
3d
1301
1144
1117
160
107
104
19
Auger Unes
L3Mn.\ti5 (Ip)
1110
1100
L3MnM45ep)
501
271
514
(AI)
281
(Mg)
L~4S
L1~sM4s
419
1116
392
159
(AI)
(Mg)
BilKling Ene'l)' (eV)
m.
90
\II
Perkin-Elmer Corporation
Physical Eledronics Division
Handbook of X-ray Photoelectron Spectroscopy
Gallium
Ga
Atomic Number 31
Mg KCt
LMM
~
LMM
l&l
195
115
Bmilll EDergy (eV)
3p
1000
1200
2"", Binding EnelID' (eV)
Compound Type
400
600
Binding Energy (eV)
1116
o
2plll' 1116.7 eV
1118
1117
200
3d
A= 26.84 eV
3d Binding Energy (cV)
CompoundType
18
19
20
21
G. '
GaAs
GaP
A1GaAs
1100
(;"oJ
1110
Binding &1ergy (eV)
'·erkin-Elmer Corporation
Physical Electronics Division
m
'II
n,
Germanium
Ge
Atomic Number
32
Handbook of X-ray Photoelectron Spectroscopy
LMM
Monochromated Al Kex
~
3SO
lJO
340
Birdinc EneJgy (eV)
LMM
3d
3p
3,
1400
1000
1200
800
400
600
o
200
Bin<ling Energy CeV)
Line Positions (eV)
3d ~ 29.4 eV
3d
Photoe\eclron Lines
2PI!2
[248
2PJ/2
1217
3,
181
3pll2
122
3Plfl
126
3d
29
Auger Lines
LJMnM4,
'"
2ll
433
200
LJMnMn
LzMnMn
L]M.'UM4S ep)
534
301
525
292
444
(AI)
211
(Mg)
('I»
L2M~~, ('Pj
L~14S
412
179
342
1119
L1M45M45
(AI)
310
(Mg)
77
Bindilll Encrzy (eV)
if\.
Perkin·Elmer Corporation
~ Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Germanium
Ge
Atomic Number
32
MgKo
LMM
LMM
~
105
III
91
BiOOing Energy (eV)
3p
3d
600
Binding EnelJlY (eV)
800
1000
1200
3d Binding EnelJlY (eV)
Compound Type
29
30
31
32
33
400
3d =29.4 eV
200
o
3d
Go
GeA"
GeTelAs2
GeS2TeAS2
G<S,As
GeTC:2
GoTe
GeSe,
G<Se
Sulfides
•
aeo,
Perkin-Elmer Corporation
Physical Electronics Division
., \
20
Binding EnetxY (eV)
m
\Jl
0'
Arsenic
Hand,book or X-ra.y Photoelectron Spectroscopy
As
Atomic Number 33
Monochromated Al Kll
'00
270
'"
Binding f.neJgy (eV)
LMM
3d
lp
Js
1400
1200
1000
800
600
400
o
200
Binding Energy (eV)
Line Positions (eV)
3d",: 41.6 eV
tJ.=O.6geV
3d",
Photoeleclron Lines
2Plf2
1359
2pll2
1324
3s
205
3pln
146
3p3f2
141
3dY.!
43
3d5,12
42
Auger Lines
L,MnM.,('P)
360
'"
(At)
L2MnM45 ep)
LJ~5M45
L2~5~5
lJ6
262
226
(At)
40
Biooing f.nef!)' (eV)
Perkin-Elmer Corporation
(I) Physical
Electronics Division
Handbook or X-ray Photoelectron Spectroscopy
Arsenic
As
Atomic Number 33
3p
MMN
MgKa
3d
3s
1200
1000
800
600
Binding Energy (eV)
3d", Binding Energy (eV)
Compound Type
40
41
AlGaAs
GoA,
IMs
Sulfides
Ash
43
44
45
46
47
•
A,
AlAs
42
400
200
3d", =41.6 eV
!J. =0.69 eV
3d",
3d"
•
•
I
•
"'Bo
A,,,,
"''''
Perkin-Elmer Corporation
ir\.
Ph,,~il'!ll Ji'1Pf'trnniN: n;"i"inn ~
f•
.
Bindilg Encfty (tV)
o
Selenium
Handbook 01 X-ray Photoelectron Spectroscopy
Se
Atomic Number 34
Monochromated AJ Ko:
LMM
LMM
210
ISO
3s
150
3p
Binding Energy (eV)
3d
1400
1200
1000
400
800
600
Binding Energy (eV)
o
200
Line Positions (eV)
3d", = 55.6 eV
3d",
A=O.86eV
Photoelectron Lines
3s
3plI2
3p312
232
169
163
Jd]12
51
Jdsn
5<i
Auger Lines
65
"
L2MnM4~ (lp)
L3~5M45
257
18\
45
Binding Energy (eV)
m.
96
W
Perkin-Elmer Corporation
Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Selenium
Se
Atomic Number 34
3d
MgKa
Jp
MMN
. 3>
1200
1000
Compound Type
800
58
600
Binding Energy (eV)
59
400
200
3d", = 55.6 cV
60
6=O.86eV
So
3dll1
AS25eJ
/
o
3d",
Ga2Sel
G<S,
G<S~
Selenides
S<Q,
•
H>SeO,
[B.c.H.hS~
(CI.H~n
(c.H£OOHns<o
Perkin-Elmer Corporation if\.
Physical Electronics Division \jI
•
}
"
~
"
~
45
Binding Encqy (eV)
97
Bromine
Handbook of X-ray Phntoelectron Spectroscopy
Br
Atomic Number 35
•
Br in KBr
Monochromated Al Ko:
3d
3,
•
3,
MMN
•
--J
1\
1400
/'!
•
•
LP
4d
LAW
1000
1200
800
600
Binding EneIgy (eV)
400
o
200
Line Positions (eV)
3d", =68.8 eV
3d",
6,=I.05eV
~oelectron
35
256
Lifl(S
3pln
189
3p312
182
Jd312
70
3d512
69
45
15
4d
5
Auger Lines
M,JM4"'"
)
80
\
1390
1157
(AI)
(Mg)
JO
Binding Energy (tV)
m
98
W'
Perkin-Elmer Corporation
Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Bromine
Br
Atomic Number 35
K
Sr in KBr
Mg Ku
MMN
3d
Jp
K
K
4d
1000
1200
600
800
400
o
200
Binding Energy (eV)
3dSll Binding Energy (eV)
Compound Type
CsBr
RbBr
KBr
NaBr
68
•-
69
3dSll
3dSll = 68.8 eV
70
Ii= I.05eV
3d]12
,J
LiBr
c,Bo
PbBo
Ni(NH))(,B11
Pt(NH)).Brl
~
K1PtBr4
K2PtBr6
SO
\
10
/'
fIJ
Binding Energy (eV)
Perkin-Elmer Co~por~ti~~
Physical Electromcs DIVIsiOn
if\
'M'
99
Krypton
Handbook or X-ray Photoelectron Spectroscopy
Kr
Atomic Number 36
c
Kr implanted in graphite
Monochromatcd Al Kn
c
1400
~
'"
1200
1000
3d
3p
'-J
800
600
Binding Energy (eV)
200
400
0
Line Positions (eV)
3d", =87.0 eV
3d",
Ii= l.23eV
Photoelectron Lines
3d 312
35*
287
3pln
216
3pyz
2llI
3d312
88
3d~
87
48
21
4p
8
)
10l
90
Binding EneI1Y (tV)
7l
m
100
W'
Perkin-Elmer Corporation
Physical Electrvnics Division
Handbook of X-ray Photoelectron Spectroscopy
Krypton
Kr
Atomic Number 36
c
MgKa
c
.......r
Fe
3p
3d
4,
1200
Com~und
Type
1000
800
3d", Binding Energy (eV)
84
86
600
Binding Energy (eV)
3d",
!:J.=1.23eV
3d"
""
Perkin-Elmer Corporation·
!)hysical Electronics Division
o
200
3d", =87.0 eV
88
•
Kr in graphite
400
'"
75
Binding EnertY (eV)
m
\Jl
101
Handbook of X-ray Photoelectron Spectroscopy
Rubidium Rb
Atomic Number 37
Jp
3d
MOllochromated Al Ka
MMN
v
4p
4,
1400
1000
1200
800
400
600
o
200
Binding EnelID' (eY)
une Positions (eY)
Jdsn = 111.5 eY
b.
= 1.49 eV
PhollX:lectron Lines
35
325
v
]PIn
249
3P312
240
3d312
113
3dsn
III
4s
31
4p
16
Auger Lines
\
'25
115
105
Birxling Energy (eV)
m
102
'II
l)erkin·Elmel' Corporation
Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Rubidium Rb
Atomic Number 37
3PJil
Rb in RbCl
Monochromated Al Ka
3d
\3PII2
\
CI
a
3s
MMN
I~
1400
I
0
~W
4p
4,
1000
1200
109
400
800
600
Binding Energy (eV)
3d", Binding Energy
Compound Type
"'VI II
0
o
200
Rb in Rl£I
110
111
Rb
RbN3
Rbi
RbBr
-
3d",
3d", = 109.9 eV
Ii= 1.48 eV
3d,. (\
RhO
RbF
Rbffi
RboP,Q,
-
RbCIo.
Perkin-Elmer Corporation .
Physical Electronics Division
m
'l'
)
12'
"'
105
Binding Ene'!}' (cV)
,.,
Strontium
Handbook or X-ray Photoelectron Spcctros<oPl'
Sr
Atomic Number 38
3d
Monochromaloo Al Ka
ls
o
\tJ\
0
4p
"
.J
1400
1200
800
\000
600
200
400
0
Binding Enetgy (eV)
Line Positions (eV)
3d", = 134.3 eV
3d",
!1=1.7geV
3d3ll
Photoelectron Lines
3:s
300
3Pl12
3PYl
3dyz
3d~
4s
281
270
136
134
39
4p
2\
\
150
140
130
Binding Energy (eV)
m
104
I'erkin-Elmer Corpondion
\j! Physical Electronics Division
Handbook of X-ray Photoetectron Spectroscopy
Strontium
Sr
Atomic Number 38
3d
Mg Kll
j,
~
0
L
0
\V\
4p
4,
.11
1000
1200
800
600
Binding Energy (eV)
400
200
0
3d", Binding EnelID' (eV)
Compound Type
s,
s,o
Srl',
SrCOl
s,so.
S«No,h
SrMoO.
SrRh204
133
134
135
-- -
3d", =134.3 eV
136
3dJ12
\
150
Perkin-Elmer Corporation
Physical Electronics Division
IT'
W
3d",
1:.= 1.7geV
1<0
Binding Energy (eV)
130
Yttrium
Handbook or X-ray Photoeledron Spe<:troscopy
Y
Atomic Number 39
Monochromated AI Ka
MNV
3P111
)P,.
1375
1360
1345
Bindil\& Energy (eV)
3,
MNN
4p
4,
1400
1200
1000
800
600
Binding Energy (eV)
o
200
400
Line Positions (eV)
3d.. ; 156.0 eV
3d,.
lJ.=2.05eV
Photoelectron Lilies
3dlll
j,
3plfl
3PJn
3<>t
311
299
3dJn
Jdsn
158
156
4,
45
4p
24
Auger Lines
v
M<"",V
1356
1123
170
160
Billdin& Energy (tV)
(AI)
1M,)
ISO
m
106
Perkin·Elmer Corporation
' " Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Yttrium
Y
Atomic Number 39
3d",
MgKa
MNV
3pyz
3s
MNN
1140
1125
Rinding Energy (cV)
1110
4p
4,
1200
1()()()
600
800
400
o
200
Binding Energy (eV)
3d", Binding Eoergy (eV)
Compound Type
155
156
3d", =156.0 eV
157
!:J. = 2.05 eV
v
V,o,
110
I'"
\
150
Binding Eoogy (tV)
Perkin-Elmer Corporation
Physical Electronics Division
'0'
Handbook 01 X-ray Photoelectron Spe<:lroscopy
Zirconium Zr
Atomic Number 40
Monochromated AI Kex
,]SO
1320
1335
JP312
Binding Enttgy (eV)
3p1/2
MNN
~'-c
~
4p
4,
_/0
1400
3d", =178.9 eV
1000
1200
200·
400
800
600
Binding Energy (eV)
0
Line Positions (eV)
3d",
6. = 243 eV
Photoelectron Lines
3s
3Pll2
3m
3d312
3d:rn
4s
430
343
330
181
179
51
4p
2&
Auger Lines
M4S N23 N2J
v
M4S N4S N45
1331
(AI)
1393
1160
''
t08
'80
1104
(Mg)
110
Binding £mru (eV)
if\
W
Perkin·Elmer Corporation
Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Zirconium Zr
Atomic Number 40
MgKa
J\
MNN
1""-
MNN
3dsn
3d",
lp",
1120
1105
1ll9ll
Bindillg F.nergy (tV)
JplIl
Js
'\.
~
'p
4.s
1200
1000
800
600
400
200
Binding Energy (eV)
3dsn Binding Energy (eV)
Compound Type
a
z,o,
118
119
180
181
I
a',
K£lrFi
K,z,n
K2lF5' H2O
182
18l
18'
3dsn =178.9 eV
185
. .
sn
3d",
••
""
Perkin-Elmer Corporation ' "
Physical Electronics Division 'II
3d
!J. = 2.43 cV
o
180
Bindin&
110
EM:rtY (cV)
109
i
Handbook of X-ray Photoelectron Spectroscopy
Nb
Niobium
Atomic Number 41
Monochromated Al Ka
MNV
3dJ12
1305
1320
1335
3P312
Binding Enagy (eV)
MNN
Js
4p
4s
1400
1200
1000
800
600
400
o
200
Binding Energy (eV)
Line Positions (eV)
3dll2 =202.4 eV
3d,n
I!. = 2.72 eV
Photoelectron Lines
3s
467
3pln
JPJ12
376
J61
3dJ12
205
Jdll2
202
4s
56
4p
JI
Auger Lines
M4SN2)V
1319
1086
v
M4S VV
1287
(AI)
1054 (MgI
\
'IS
205
195
Binding Ellergy (eV)
m.
lIO
l'erkill·Elmcr Corporation
\ j / Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Niobium
Nb
Atomic Number 41
MgKa
MNV
~
MNV
\
3dsn
)
Jdjn
JP3I1
1100
1085
1070
Binding Energy (eV)
3PIf2
Js
\
~
\t
-J
4,
4,
1200
1000
800
600
Binding Energy (eV)
400
200
!
o
3d", Binding Energy (eV)
Compound Type
201
202
20J 204 205
206
3d", =202.4 eV
207 208
3d,"
f1 = 2.72 eV
Nb
NbN
NbO
Nb;O,
l1li
•
LiNb03
CaNtn06
Ca2NbJOJ
Br6(Nb6Chl)(BlI4Nl2
C!2(Nb6ClJl)(Pf]P).l
C!2(Nb6C1Il)(Mt1S0)4
Perkin-Elmer Corporation
l)hysical Electronics Division
••
•
215
205
195
Binding Energy (eV)
'"
Handbook of X-ray Pholoeleclroo SpeclroscoPJ'
Molybdenum Mo
Atomic Number
42
Monochromaled Al Ka.
MNV
\310
1280
1295
Binding Encrzy (eV)
3,
4p
4,
1400
1000
1200
400
800
600
Biodiog Eoergy (eV)
o
200
Line Positions (eV)
3d", = 228.0 eV
3d",
A=3.13eV
POOtoelectron Lines
3<
506
3pln
412
3P1'2
394
3dJn
3d",
2JI
228
4,
63
4p
36
Auger Lines
M<,N"V
1299
1066
M4jVV
1264
(AI)
1031
(Mg)
\
'40
2JO
Binding EneIgY (tV)
m
112
Perkin-Elmer Corporation
' " Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Molybdenum Mo
Atomic Number
MgKa
/
MNV
42
3ds12
-
3d,"
'Iv
MNV
lOW
1065
IOSO
Binding Energy (eV)
3pli2
3p1I2
\
3,
1l
'J
d
~
4p
4, ~
1200
1000
800
600
Binding Energy (eV)
3ds" Binding Energy (cV)
Compound Type 226
227
228
229
230
231
232
400
3d", = 228.0 eV
233
o
200
3dsr'2
IJ.:::3.13eV
Mo
Botide
M~C
MoS,
MoCb
MoCl.
MoCI 5
3dli2
•
MoO,
MoO,
(NH)4Mo04
(CO),Mo{Ph)Ply
•
Perkin-Elmer Corporation
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•
\
240
230
220
Binding Energy (eV)
113
Ruthenium
Ru
Atomic Number
44
Handbook of X-ray Photoelectron Spectroscopy
Monochromated Al Kex
3d,"
MNN
Jdli2
1230
1215
Binding Energy (eV)
IlOO
MNN
4,
1400
114
1200
1000
800
600
Binding Energy (eV)
400
200
4p
o
Perkin-Elmer Corporation
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Hrmdbook or X-ray Photoelectron Spectroscopy
MgKa
Ruthenium
Ru
Atomic Number
44
3d512
MVV
3d",
MNV
,.,
'"
965
BiDding Energy (eV)
3PlJl
~
3PI12
V
3.
\.
-J
.A
.p
4p
4.
A
"\
1000
1200
800
600
400
200
Binding Energy (eV)
3d512 Binding Energy (eV)
Compoond Type T/6
271
R"
R..a,
R..o,
RuO)
RuO.
Ru(NH3hNlh
Ru(NH3l.sN1Br2
Ru(NH).sN1Q2
Perkin-Elmer Corporation
l)hysical Electronics Division
278
279
280 281
3d", =280.1 eV
282 283
o
3d",
Ii = 4.17 eV
••
• •
\
290
210
...
Rhodium
Handbook of X-ray Photoelectron SpectroscoPJ
Rh
Atomic Number 45
Monochromated AI Ka
MVV
1110
1205
Binding Enel&Y (tV)
3PlIl
MNV
3,
4p
4,
1400
1000
1200
800
600
o
200
400
Binding Energy (eV)
3d", = 301.2 eV
Line Positions (eV)
3d",
A:4.74eV
Photoelectron Lines
3dm
3s
629
A
3ptn
521
3plll
497
3d",
312
3d",
J01
4,
81
4p
48
Auger Lines
\
J20
."
310
Biodin& fnclJY (tV)
M4SN2]V
M.isVV
1234
1001
1185
952
(AI)
(Mg)
JOO
m.
W
Perkin·Elmer Corporation
Physical Electronics Division
Handbook of X-ra)' Photoelectron Spectroscopy
Rhodium
Rh
Atomic Number 45
\.
MgKa
MVV
MNV
Jdll1
~
",0
Jdll1
93'
Binding Energy (tV)
3Pl11
3pln
3s
\.
J
_I'
4s 4p
• A
1000
1200
800
600
Binding Energy (eV)
400
o
200
3d", Binding Energy (eV)
Compound Type
307
308
309
Rh
I
Halides
••
Rhih
CIRh(Ph,p),
CbRh(Ph)p»)
CloRhlPh,Ph
310
3d," • 307.2 eV
311
3d,"
Ii = 4.74 eV
3dll1 f\
Br6Rh(Ph)Ph
ClzRMcytlooctoo;e,,"
Rhz(OAc)4·2H:10
\
Rh(NH2CH2COOh . H20
320
m
Perkin-Elmer Corporation
Phvsical Electronics Divi.~ion \II
310
BiMinI Energy (tV)
300
Hand~ook of X-ray
Palladium Pd
Photoelectron Spedroscopy
Atomic Number 46
Monochroma,ed AI Ka
MVV
1170
1140
!ISS
Bindi"& Energy (eV)
3P3Jl
3pln
MNY
3s
4s
As
1400
'"
1200
1000
600
Binding Energy (eV)
800
200
400
If\.
W'
4p 4d
0
Perkin-Elmer Corporation
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Handbook of X-ray Photoelectron Spectroscopy
Palladium
._.~-_.
Pd
Atomic Number 46
JdSll
MgKa
MYY
940
925
Binding Energy (eV)
MNY
910
4d
4s 4p
1200
1000
800
600
400
200
Binding Energy (eV)
Pd
Pd,Si
PdJSi
o
3dSll = 335.1 eV
•
A::: 5.26 eV
3d3i2 t
Halides
PdQ
Pd02
K2Pd04
\J
K1PdBr4
K,PdCI~
Pd(OAc)2
Pd(SPh)z
Perkin·Elmer Corporation
Physical Electronics DivisiOiI
•
350
340
Binding Energy (eV)
330
Silver
Handbook of X-ray Photoelectron Spectroscopy
Ag
Atomic Number 47
3d5ll
Monochromatcd Al Ka
~
1145
3d",
1120
BiDdi"l FJlergy (eV)
3"",
MNV
I~
3PI(2
3s
.JU
"
4<1
/
4s 4p
"'
1200
1400
800
600
Binding Encrgy (eV)
1000
400
o
200
Line Positions (eV)
3d5ll = 368.3 eV
Ii = 6.00 eV
PlllJloelectron Lines
3d",
3,
)P,n
3"",
719
604
573
3d",
37.
3d5ll
368
4,
4p
98
60
AugerU~
\
J82
3n
M.uNn V
M5 VY
1191
958
1135
902
M4 VY
1129
(AI)
896
(Mg)
J62
Bindin& Energy (eV)
it'\. Perkin-Elmer Corporation
W
Ph.vsical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Silver
Ag
Atomic Number 47
MgKa
MVV
910
885
Binding Energy (eV)
MNV
3py,
3pln
3,
4d
4s 4p
lZ00
800
!OOO
600
Binding Energy (eV)
ZOO
400
0
3d", Binding Energy (eV)
Compoooo Type
367
368
3d", =368.3 eV
369
3d",
!J.=6.00eV
A,
Alloys
A"s
A~
AgF
A,F,
Oxides
A"co,
Sulfate
AgOOCCFl
Ag(OAc)
382
312
362
Binding Energy (eY)
Perkin-Elmer Corporation
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IZI
Cadmium
Handbook or X-ray Photoeletlron Spectroscnpy
Cd
Atomic Number 48
Mooochromated Al Ka
MNN
3d",
I~
1120
3d.,
1105
1090
Binding Entru (eV)
3"",
MNN
I~
1400
3Plf2
4d
3s
V
/\/
A
/
45 4p
1000
1200
800
600
Binding Energy (eV)
400
o
200
Line Positions (eV)
3dll1; 405.1 eV
3dll1
Ii = 6.74 eV
Pholoelectron Lines
35
772
3Pl12
652
3P312
618
3d}'2
412
3d512
405
4s
110
4p
69
4d
II
Auger Lines
~N4SN45
"0
1103
(AI)
870
(Mg)
395
Binding EnerJy (eV)
It'
122
\JI
Perkin-Elmer Corporation
Physical Electronics Division
Handbook of X.ray Photoelectron Spectroscopy
Cadmium
Cd
Atomic Number 48
MgKa
3d",
f~
MNN
3d",
I-----'
\
'v
8lO
'"
""
Dindin! Energy (eV)
MNN
3p",
''0
3pln
3s
A.
-1\
,
4d
J
4s 4p
~
1200
1000
800
600
400
200
3d", ' 405.1 eV
3d",
Binding Energy (eV)
o
3d", Binding Energy (eV)
COOIJXlUnd Type
404
405
406
407
6. = 6.74 eV
Cd
3d",
H8lU~.2Te
000
CelSe
CdS
Halides
CdO
CdO,
Cd(OUh
CdCO>
420
395
Biooiag Eoc:rtY (eV)
Perkin-Elmer Corporation
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if\.
'lI
Indium
Handbook of X-ray Photoelectron Spectroscopy
In
Atomic Number 49
Monochromated Al Ka
34jJ2
MNN
~
~
3d3l1
V\
1060
1075
1100
Binding Energy (eV)
3p3I1
3.Pl/2
MNN
4d
3s
I"
V
J;
4s 4p
'1400
1200
1()()()
400
800
600
Binding Energy (eV)
o
200
Line Positions (eV)
Jd 5J2 =443.9 eV
t:.=7.54eV
Photoelectron Lines
3s
828
Jd m
3Pl12
703
3p312
665
3dJ12
452
3d512
444
4s
123
4p
78
44
17
Auger Lines
M4 N4S N4S
1016
(A1)
843
(M,)
4Jj
'60
Binding Energy (eV)
124
if\.
W
Perkin-Elmer Corporation
Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Indium
In
Atomic Number 49
I~
MgKa
f-/
3d5!2
MNN
3dJ12
U\
855
840
Binding Energy (eV)
825
MNN
V'v
.
3P3fl
3p1I2
3,
j
•
4d
4s
1200
woo
600
800
400
4p
o
200
Binding Energy (eV)
Compound Type
3d,n Binding Energy (eV)
443
444 445
446 447
3d,n = 443.9 eV
C. = 7.54 eV
3dsn
I"
!nSb
I"P
IOlTe]
InCh
InCI
ln203
In(OH)3
In(acac)J
Br2InEl4N
Br41nPr4N
••
3dJ12
~
~
460
/'
43S
Binding Energy (eV)
Perkin-Elmer Corporation
Physical Electronics Division
125
Tin
Handbook of X-ray Photoelectron Spectroscopy
Sn
Atomic Number 50
Monochromated AI Ka.
3d",
I~
MNN
~J
nno
3d",
0\
1040
1055
BiDding Energy (cV)
.
3m
MNN
3Pln
I'"
3,
V
~
4d
j
4, 4p
-u
1000
1200
1400
800
600
o
200
400
Binding Energy (eV)
ld",;485.0eV
6=8.41 eV
Line Positions (eV)
3d",
3s
885
3p In
751
3p]n
715
JdYl
493
3dsn:
485
4s
137
.4p
4d
89
25
Auger Lines
~N45N.(5
\
1049
816
(AI)
(Mg)
Binding fucJgY (eV)
m
126
Perkin-Elmer Corporation
\jI Ph)'sical Electronics Division
Handbook of X-ray Photoelectron SllcctroSCO!>y
Tin
So
Atomic Number 50
Mg Ka
~
MNN
Jd",
..
v\
835
820
Jdll1
805
BilldiDg EntItY (tV)
.
MNN
'v
3Pl11
3pII2
J.
;
4d
4, 4p
V
1200
1000
600
Binding Energy (eV)
800
3d", Binding Energy (eV)
Compound Type
484
S,
SOlS
Halides
SOO
485
486
487
400
3dll1 =485.0 eV
488
6=8.4IeV
•
o
200
3d",
3d",
S..o,
N32Sn(h
PhiSn
PluSn (Halide)
Me3SnF
\
Mt:!SnF2
BriSo(El.Nh
500
Binding Energy (tV)
Perkin-Elmer Corporation
Physical Electronics Division
''"
Antimony
Handbook of X-ray Photoelectron Spectroscopy
Sb
Atomic Number 51
3d",
Monochromated Al Ka
MNN
)
.
3d3ll
I~
\J\
1040
.
1010
102.5
Binding Energy (e V)
3p3Il
MNN
I~
3pII2
V
3,
4<l
)
-l~
4, 4p
....A
1200
1400
3d",
1000
400
800
600
Binding Enei&Y (eV)
o
200
Line Positions (eV)
=528.3 eV
l'1 = 9.34 eV
Photoelectron Lines
3d3ll
38
944
3pJn
813
3p312
767
3dJ12
537
3dYl
528
4s
153
lip
99
4<l
33
Auger Unes
MtN4S N4S
t022 (AI)
789 (Mg)
545
...
520
m
W
Perkin-Elmer Corporation
Physical Electronics Division
Handbook of' X-ray Photoelectron Spectroscopy
Antimony
Sb
Atomic Number 51
3ds12
MgKa
(~
MNN
Jd3i2
0\
810
MNN
795
780
Binding Energy (eV)
3PI12
,
V J~n
!~
U
\
4d
"0
1200
1000
800
600
Binding Energy (eV)
3d sn Binding Energy (eV)
Compound Type
528
Sb
AISb
Sulfides
Halides
Sb,O,
529
530
531
532
3d", =528.3 eV
533
Il = 9.34 eV
••
Ph3Sb
BU3Sb
a
200
3d",
3d3i2
".
Shi)5
KSbF6
NaSbF6
CsSbF4
400
•
\
545
/
520
Binding Energy (eV)
Perkin-Elmer Corporation
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110
Tellurium
Handbook of X-ray Photoelectron Spectroscopy
Te
Atomic Number 52
Monochromated AI Ka
MNN
985
'''''
1015
Binding Energy (eV)
MNN
4d
4s 4p
\400
\200
1000
800
600
400
o
200
Binding Energy (eY)
Line Positions (eV)
3d,n = 573.\ eY
6= IO.3geV
3d1ll
Photoelectron Lines
3d.,
)PIn
871
3"",
820
3d.,
583
3d",
1009
4,
170
4,
4d.,
4d",
III
47
41
5,
12
j,
573
Auger Lines
\
~
\.
MsN45 N45
~N4514,
1005
995
762
772
'Ol
(AI)
(Mg)
Bindilll f..Dc'IY (eV)
rn.
Perkin-Elmer Corporation
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Handbook of X-ray Photoelectron Spectroscopy
Tellurium
Te
Atomic Number 52
Mg Kll
MNN
MNN
""
765
Bindint FneJu (cV)
750
Js
4d
4s
1000
1200
800
600
Binding Energy (eVJ
400
4p
o
200
3d", Binding Energy (eV)
Compwnd Type
572
573
514
575
$76
577
Te
518
3d", = 573.1 eV
A = 10.39 eV
We
GeTe
Hgo.A2Te
Tellurides
Halides
TeOz
TeOz
•
T~OH'
P!l2Te2
Br}TePh
Perkin-Elmer Corporation
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•
m
'lI
\
16l
Binding
f.rJaD (cv)
"'
Iodine
Handbook of X-ray Photoelectron Spectroscopy
I
Atomic Number 53
3dsn
1in KI
Monochromated Al Ko:
3d.,
MNN
IIA
~
~
~
\
95JJ
1100
BiMing FMrgy (tV)
~J
K
~
........
J.
K
Jp3ll
4d
3plIl
/
K
4,
I
4p
~
1400
400
SOO
600
Binding Energy (eV)
1000
1200
~l,
o
200
Line Positions (eV)
3dsn
3d sn = 619.3 eV
KK 55
V
A=IJ.50eV
3d.,
PhoI:oelectron Lines
35
107)
3pln
930
3m
875
3d.,
630
3dsn
619
45
187
4p
4dsn
4dS/1
ls
123
51
49
18
Allger Lines
~
/
640
\.
615
Binding
~y
M5N45N45
M4N.o,N41
982
749
971
738
(tV)
m
132
(AI)
(Mg)
W
Perkin-Elmer Corporation
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Handbook of X-ray Photoelectron Spectroscopy
Iodine
I
Atomic Number 53
3d512
I in KI
MgKa
MNN
IIv\
3dJi2
~
~
\J\
no
MNN
K
3,;"
j
140
110
Binding E'nergy (eV)
3'lll
~
'V LAI!
K
4d
K
4,
A
4,
KK
cI
800
1000
1200
600
Binding Energy (eV)
400
200
,
tJ
o
3ds12 Binding Energy (eV)
Compound Type
618
619
620
621
&22
623
3d,n= 619.3 eV
624
3d5l1
!:J=lI.5eV
"
Alkali iodides
3dJi2
Agi
Nih
Nih· 6H20
•
Nal03
Nal04
H5J06
bOl
lei
leb
Perkin-Eimer Corporation
Physical Electronics Division
••
\
615
640
Binding Energy (eV)
133
Xenon
Handbook of X-ray Photoelectron Spectroscopy
Xe
Atomic Number 54
C
Xc implanled in graphite
Monochromated AI Kll
MNN
M
3,312
fI
i-'-
3d",
~
970
'\
3d1l2
,..,
94'
Binding Energy (eV)
MNN
C
Jplll .3P1t'2
4d
~
"'1<\
4p
4,
I
1400
1000
1200
3d", = 669.7 eV
800
600
Binding Energy (eV)
400
o
200
Line Positions (eV)
3d",
Photoelectron Lines
6= 12.67eV
3d1l2
.
3,
Jp,n
3pll2
3d1l2
3d",
1141
996
934
683
670
4,
4,
4d1l2
4d",
2ff1
139
63
61
"17
Auger Lines
MsN4SN45
955
\
700
67'
Bn.lirl& Erqy (tV)
722
M.iN4sN45
942 (AI)
709 (Mg)
""
m
'II
Perkin-Elmer Corporatiol
Physical Electronics Dh'isioJ
Handbook of X-ray Photoelectron Spectroscopy
Xenon
Xe
Atomic Number 54
MNN
C
Mg Ka
c
740
j1
115
Binding F1!cIgY (cV)
690
3dJ12
3pJ12
,
MNN
3d5J2
~
\
•
'\,
-1
4d
4,
1200
1000
800
600
Binding Energy (eV)
3dS/2 Binding Energy (eV)
Compound Type
Xc in Ag
Xe in Au
Xc in Cu
Xe in Fe
Xe in graphite
N34XeQ,
668
669
610
•
•
•
611
672
673
400
200
3d512 =669.7 eV
614
4p
6 = 12.67 eV
o
3d512
3dJ12
•
100
615
650
Binding Energy (cV)
Pcrkin·Elmer Corporation
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U5
,
Handbook of X-ral' Photoelectron Spectroscopl'
Cs
Cesium
Atomic Number 55
Monochromaled AI Ka.
MNN
95.
920
890
BiJJlint Energy (eV)
3P1I2 3pYl MNN
3,
4d
4p
4,
o
1400
1200
1000
400
800
600
Binding Energl' (eV)
o
200
Line Positions (eV)
3d"," 726.4 eV
3d",
Ii = 13.94 eV
PhOloelectron Lines
3dJll
3s
1219
4,
234
3Plfl
1069
3Pl1l
1002
3dJll
740
3d",
726
4plfl
4Pl1l
161
4dJll
4d",
80
77
173
5,
25
Auger Lines
761
740
Bindilll FJlergy (tV)
115
MsN45N.ts
931
698
~N45~S
918
685
m
(AI)
(Mg)
Perkin-Elmer Corporaliol
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Cesium
Cs
Atomic Number 5S
Jdsn
Mg Ka
MNN
3dJll
710
Binding Energy (tV)
MNN
4d
4p
4,
800
1000
1200
600
400
o
200
Binding Ene~y (eV)
3dsn Binding
Compound Twe
723
Ene~y
724
(eV)
3dsn = 726.4 'V
.725
3d sn
fo"o:.l3.94eV
3dJll
Cs
Halides
CsN,
es,so.
CSlPO.
CS.P20J
CsCl0~
CS1Cr04
CS£r-/h
CsOU
Perkin·Elmer Corporation
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765
740
Binding Enol)' (tV)
137
Barium
Handbook of X-ray Photoelectron Spectroscop)'
Ba
Atomic Number 56
Monochromaled AI Ka.
MNN
930
MNN
3p3/2
Binding Energy (cV)
4d
4p
4,
5s
1400
1200
3d", =780.6 eV
400
800
600
Binding Energy (cV)
1000
5
o
200
Line Positions (eV)
3d",
6= 15.33eV
3d3/2
Photoelectroo Lines
3,
~
138
195
Jp3/2
1064
3d3/2
796
4,
254
4PII2
193
4pyz
4d3/2
93
4d",
90
179
78\
5,
31
Sp
15
Auger Lines
\.
'"
3pII2
1138
3d",
1m
no
M5N.t5N.(s
~N45N'(5
900
886
667
653
(AI)
(Mg)
Binding Energy (eV)
iY\
'II
Perkin-Elmer Corporation
Physical Electronics Diyision
Handbook of X·ray Photoelectron Spedroscopy
Barium
Ba
Atomic Number 56
MgKn
MNN
OJ<}
700
Binding Energy (eV)
MNN
4d
4p
4,
S. 5p
gOO
1000
1200
600
400
200
o
Binding Energy (eV)
3dl/2 Binding Energy (eV)
Compound Type
778
T19
·780
-
B,
B'lS
B,O
Ba(NOlh
BaCO)
B'lSO.
BaCr04
BaMo04
BaRh~
Perkin-Elmer Corporation
Physical Electronics Division
-
3d"" 780.6 eV
781
l!.=1533eV
810
795
710
BindillJ Energy (eV)
139
Lanthanum
La
Atomic Number
57
Handbook of X-ray Photoelectron Spectroscopy
Monochromated AI Ka
3d1ll .
MNN
4d
MNN
4p
45
~
1400
1200
1000
V
400
&00
600
Binding EneTID' (eV)
55
200
5p
0
Line Positions (eV)
3d", =&35.& eV
!J. = 16.78 tV
Photoelectron Lines
3d1ll
3d",
1128
iS3
836
45
4Plfl
21J
41'312
4dlll
197
106
MsN4SN4:i
867
55
5p
34
IJ
820
634
M4N4S N45
854
621
m
140
4dlll
103
Auger lines
\
845
Binding EPe'l)' (tV)
3Pl1l
1208
27S
~
87<1
3plI2
(AI)
(Mg)
Perkin. Elmer Corporation
\j! Physical Electronics Division
iandbook of X-ray Photoelectron Spectroscopy
Lanthanum
La
Atomic Number 57
3d",
MgKa
Jdlll
3PlIl
MNN
'--'"
,
4d
4,
.A
G
"\
1200
800
1IlOO
600
Binding EnelID' (eV)
3d", Binding Energy (eV)
Co~ndType
833
834
835
Corporation
'hysical Electronics Division
400
5s 5p
o
200
3d", = 835.8 eV
831
838
839
A= 16J8eV
3d",
~
u
uH,
u,o,
'erkill~Eliller
836
4p
(])
141
Handbook of X-ray Photoelectron Spectroscopy
Ce
Cerium
Atomic Number 58
Monochromaled Al Ka
3dsn
ld",
/
lPln
\:V
lJ
MNN
4d
4p
4,
0
""\.
1400
1200
!OOO
800
600
Binding Energy (eV)
400
5
Is,
200
0
Line Positions (eV)
3d", = 883.8 eV
Photoelectron Lines
3d",
6= 18.10eV
3d",
3Plll
1m
lPln
Jd3ll
liS<
902
3d",
814
4s
290
4pln
4P3ll
4d",
4d",
223
'If1I
112
109
5,
36
5p
18
Auger Lines
M45N~5N45
\
940
...
900
Binding Fnergy (eV)
8ll
Wl
(AI)
(Mg)
"60
m
'lI
Perkin-Elmer COl:poratioll
Physical Electronics Division
Handbook of X-raj' Photoelectron Spectroscopy
Cerium
Ce
Atomic Number S8
3d",
MgKa
3d",
.
.
MNN
0
'-
•
4d
'--~
4,
4p
I
'--
1200
600
800
1000
Is
o
200
400
5p
Binding Energy (eV)
3d", Binding Ene~y (eV)
Compou,d Type
881
882
883
884
885
886
3d", ~ 883.8 eV
3d",
/::, = 18.10 eV
3d",
Co
etA.
CePdl
CoSe
CeCU1:Sh
c.o,
•
CoH,
900
Binding EMgy (eV)
Corporation
Physical Electronics Division
l)erkin~Elmer
860
Handbook of X-ray I)hotoelcctron Spectroscopy
Praseodymium Pr
Atomic Number
59
Monochromated Al Ka
3d",
Line Positions (eV)
3d," =931.8 eV
!J. = 20.4 cV
Photoelec!roll lines
3d312
3PI12
3plI2
3d312
3d",
1339
1242
952
932
4,
4Pln
4p1l2
4d
5,
305
234
218
115
38
5p
18
Aliger Lines
990
'50
910
M45 N4S N4S
797
(AI)
564
(Mg)
BindiDg Erqy (cV)
144
Perkin-Elmer Corporation
(J) Physical
Electronics Division
landbook of X-ray Photoelectron Spectroscopy
Praseodymium Pr
Atomic Number
S9
3d",
MgKa
3d",
.•
~V
MNN
4d
~
1200
1000
4p
I
.--J
~
400
600
800
4,
200
5.< 5,
o
Binding Energy (eV)
3d", Binding Energy (eV)
Compound Type
931
932
•
93J
3d", =931.8 eV
Ii:::: 20.4 eV
934
935
•
4d Binding Energy (eV)
Compound Type
liS
116
II?
99OL_~_ _-----C9C:C50::-------'"-=-;910
Bindin: Energy (tV)
Perkin·Elmer Corporation
Ilhysical Electronics Division
145
Handbook of X-ray Photoelectron Spectroscopy
Neodymium
Nd
Atomic Number
60
3d",
Monochromated Al Ka
3dJlJ
3pJIJ
\.;\
MNN
\
J
4d
4p
4s
0
14110
I
zoo
woo
800
600
Binding Energy leV)
6= 22.6eV
5s
zoo
400
3d",
3d", =980.8 eV
U
5p
o
Line Positions (eV)
Photoelectron Lines
3pJlJ
nOJ
3d",
1003
3d",
98J
4s
320
4PIf2
4P312
4d
245
228
J2J
5s
39
5p
19
Auger Lines
M4S N45 N45
1040
100II
758
525
(AI)
(M,)
Binding Energy (eV)
m
146
W
Perkin-Elmer Corporation
Physical Electronics Division
iandbook of X-ray Photoelectron Spectroscopy
Neodymium
Nd
Atomic Number
60
3dsn
MgKa
3d",
MNN
0
4d
~
1200
1000
800
4s
400
600
4p
0
200
Is 5p
o
Binding EnelID' (eV)
3d", Binding EnelID' (eV)
Compoond Type
9SO
981
3d",; 980.8 eV
982
!J. = 22.6 eV
Nd
Ndf)3
4d Binding EneIgy (eV)
Compound Type
119
120
1040
)erkin-Elmer Corporation
lhysical Electronics Division
1000
Binding Energy (eV)
147
Handbook or X-ray Photoelectron Spectroscop)
Samarium Sm
Atomic Number 62
3d3f2
3dS12
Monochromated AI Ka
MNN
4d
4p
4s
5s
1200
1400
1000
400
800
600
Binding Energy (eV)
,
i'
3d"," 10Sl.1 eV
A:; 26.8 eV
Sp
o
200
Line Positions (eV)
3d512
Photoelectron Lines
3d"
3d5n
IOSl
3d312
1108
4s
349
4pJ/2
283
4p}(.I:
250
4d
129
5$
41
Sp
19
Auger Lines
M4S N4S N45
1140
1100
Binding fJlergy (eV)
682
(AI)
449
(Mg)
1060
m
148
\II
Pcrkin~Elmcr
Corporatiol
IJhysic~d Electronics Divisiol
Handbook nf X-ray Phnln<leclron Spectroscopy
Samarium Sm
Atomic Number 62
MgKa
MNN
4d
4p
5,
1000
1200
600
800
200
400
5p
o
Binding Energy (eV)
3d", Binding Energy (eV)
COlD;lOOnd Type
Sm
Sm203
..
1081
1082
3d", = 1081.1 eV
100
1084
Ii = 26.8 eV
-
3dJi2
"40
"00
1060
Binding Energy (eV)
Perkin-Elmer Corporation
Physical Electronics Division
149
Handbook of X-ray Photoelectron SpectroSCOJlY
Europium Eu
Atomic Number 63
Monochromaled Al Ka.
MNN
4s
4p
5,
1400
1200
1000
400
800
600
Binding Energy (eV)
o
200
Line Positions (eV)
3dlll =1125.6 eV
3d",·
3dlll
t. = 29.8 eV
Photoelretron Lines
3dYl
1155
Jd512
1126
4$
363
4pln
289
4PY2
255
4d
128
55
39
5p
19
Auger lines
M.(sN~sN.s
1190
ISO
1150
Binding Enc'!y (eV)
631
(AI)
'04
(Mg)
1110
if\.
W
Perkin-Elmer Corporation
Physical Electronics Oi.vision
Handbook of X-ray Photoclectroo Spectroscopy
Europium Eu
Atomic Number 63
MNN
Mg Ka
5p
1000
1200
800
600
Binding Energy (eV)
400
200
o
3d", Binding Energy (eV)
Comp(xliKI Type
1123
1124 1125 1126 1121
4d = 128.2 eV
1128 1129
•
Eu
4d Binding Energy (eV)
Compound Type
Eu
EU20J
128
129
130
131
•
Perkin-Elmer COr(JOration
l)hysical Electronics Division
132
133
134
135
I'
180
150
120
Binding EIlerv (tV)
if\
W
1'::;1
Gadolinium
Gd
Atomic Number
64
Handbook of X-ray Photoelectron Spectroscopy
Monochromated AI Kn
MNN
4d
4p
5p
5s
1400
1200
I()()()
800
400
600
o
200
Binding Energy (eV)
Line Positions (eV)
4d. 140.4 eV
4d
Photoelectroo Lines
3d",
1186
3dJn
1218
4s
31S
4Pln
291
4p1l2
m
4d
140
5s
43
5p
4f
21
S
Auger Lines
~~
602
180
130
369
(AI)
IMS)
Binding EnCl!Y (eV)
m
1.1\1.
Perkin-Elmer COrjlOration
\jI Physical Electronics Division
landbook of X-ray Photoelectron Spectroscopy
Gadolinium
Gd
Atomic Number
64
Mg Kll
MNN
4d
,[
5p
1200
tooo
400
600
800
o
200
Binding Energy (eV)
4d Bindiog Energy (eV)
Compound Type
140
141
142
143
4d
144
=140.4 eV
4d
Gd
Gd,o,
3d5ll Binding Energy (eV)
Compound Type
1181
Gd
Gd,o,
'erkin-Elmer Corporation
'hysical Electronics Division
1188
1189
ISO
Birding EnettY (eV)
'30
'"
Terbium
Handbook of X-ray J)hotoelectron SpectroscOIJ)'
Tb
Atomic Number 65
3d",
ldyz
Monochromated AI Kn
MNN
4d
4f
5,
1400
1200
1000
800
600
Binding Enelty (eV)
400
5p
o
200
Line Positions (eV)
4d = 146.0 eV
4d
Pholoeleclr1:m Lines
3d",
1276
3d",
4,
396
'P,n
1241
322
4"",
285
4d
Is
5p
146
45
22
"
8
Auger lines
''
M4sN4sN45
M4SN 4sV
MsVV
M,VV
559
326
411
260
230
178
(AI)
(Mg)
'40
Binding Energy (eV)
if\,
W
Perkin-Elmer Corporation
Physical Electronics Division
Handbook nf X-ray Phntoelectron Spectroscopy
Terbium
Tb
Atomic Number 65
MgKa
MNN
4f
Sp
~
1200
tOOO
800
600
400
200
o
Binding Energy (eV)
4d Binding Energy (eV)
Compoond Type
Tb
Tb,Q,
ThO,
145
146
147
148
~,
149
~
4d
4d
=146.0 eV
Jd 5ll Binding Energy (eV)
Compound Type
1240
Tb
Tl>,o,
ThO,
)Jerkin-Elmer Corporation
Physical Electronics Division
1241
1242
--
140
190
Binding Enesgy (eV)
J55
Dysprosium
Dy
Atomic Number
66
Handbook of X-ray Photoelectron Spectroscopy
3d1ll
Monochromatcd Al Ka
3d",
MNN
4d
4p
4
5s
1400
JOOO
J200
SIlO
600
Binding Energy (eV)
400
5p
o
200
Line Positions (eV)
4d; 152.4 eV
Photoelectron Unes
3d1ll
1333
3d",
4,
417
4Plf2
4P3n
4d
j,
331
'!J1
152
48
1296
5p
23
4f
8
Auger Lines
200
170
~sN4sN45
M45~5V
526
36ll
(AI)
140
Binding &1ergy (eV)
m
W
Perkin-Elmer Corporation
Physical Electronics Division
landbook of X-ray Photoelectron Spectroscopy
Dysprosium
Dy
Atomic Number
66
4d
MgKa
4f
5p
5,
1200
600
1000
400
200
o
Binding Energy (eV)
4d Binding Energy (eV)
Compoond Type
152
156
160
'164
4d = 152.4 eV
168
Dy
4d
Drill
3d", Binding Energy (eV)
Compoond Type
1287
Dy
DnO)
1289
,
129\
1293 1295
•
200
110
140
Binding Energy (eV)
~crkin·Elmer
Corporation
=-hysical Electronics Division
157
Holmium
Handbook or X-ray Photoelectron Spectroscopy
Ho
Atomic Number 67
3dlll
Monochromated AI Ka
IV
3d",
MNN
4d
4f
5
5p
'.J
1400
1200
800
1000
600
400
o
200
Binding Energy <eV)
Line Positions (eV)
4d ~ 159.6 eV
4d
Pholoeleeuoo Lines
4PII2
4Pl1l
4d
1352
4,
435
353
309
160
50
SPin
5Pl1l
49
30
24
'f
9
3dlIl
3d",
1393
Auger Lines
100
M.1srt.5N4j
~sN4SV
488
31'
""VV
111
(AI)
IlO
BirKling Energy (eV)
m.
158
'II
Perkin-Elmer Corporation
Physical Electronics Division
Handbook nf X-ray Photoelectron Spectroscopy
Holmium
Ho
Atomic Number 67
MgKa
4,
4Pi12
4f
5p
1200
1000
800
600
Binding Energy (eV)
400
o
200
4d Binding Energy CeV)
Compoooo T""
158
159
Hn
-
t60
4<1: 159.6eV
4d
200
Binding Energy (tV)
Perkin-Elmer Corporation
Physical Electronics Division
m
'II
''0
Erbium
Handbook or X-ray Photoelectron Spectroscopy
Er
Atomic Number 68
MNN
Monochromated Al Ka
4PlIl
4d
4r
5p
1400
1200
1000
800
600
400
o
200
Binding EnclJiY (eV)
Line Positions (eV)
4d =167.3 eV
4d
Photoelectron Lines
4s
451
4plfl
368
4P312
321
4d
167
5s
52
5p1l2
31
5pY2
24
4f
9
Auger Lines
MsVV
M,VV
98
56
(AI)
,(;)
210
Binding &letu (eV)
m
160
Perkin-Elmer Corporation
\jI Physical Electronics Division
Handbook of X-my Photoelectron Spedroscopy
Erbium
Er
Atomic Number 68
Mg Ktt
'f
5,
1200
soo
1000
600
400
200
Binding Energy (eV)
o
4d Binding Energy (eV)
COffiJXlund Type
167
&
&
&,0,
168
4d = 167.3 eV
169
4d
-
210
BiJldilll EaefD (cV)
Perkin-Elmer Corporation if\,
Physical Electronics Division W
160
161
Thulium
Handbook of X-ray Photoelectron Spectroscopy
Tm
Atomic Number 69
MNN
'P3Il
Monochromated AI Ka
•
J
1400
I()()()
1200
800
600
o
200
400
Binding Energy (eV)
Line Positions (eV)
4d = 175.4 eV
4d
Photoelcaroo Lines
4$
4pJn
384
470
4Pl12
4d
5$
5p1I2
5pYl
4f
333
175
53
32
25
8
Auger Lines
M4S N4S N45
398
(AI)
220
190
160
Binding EPelgy (eV)
m
162
W
Perkin-Elmer Corporation
Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Thulium
Tm
Atomic Number 69
4d
'f
Sp
1200
gOO
1000
600
Binding Energy (eV)
4<1 Binding Energy (eV)
Compound Type
175
11'
Tm
-
400
4<1 =175.4 eV
116
220
o
200
4<1
190
Binding Energy (tV)
160
m
IJerkin-Elmer COfJlOration
Physical Electronics Division \j!
163
Handbook of X-ray Photoelectron Spectroscopy
Ytterbium Yb
Atomic Number 70
\
Monochromated Al Kn
4d
41
4PlI2
4PJf2
5p
5,
1400
1200
800
600
Binding Energy (eV)
1000
400
o
200
Line Positions (eV)
4d =182.4 eV
4d
Photoelectron Lines
4s
<In
4Pln.
389
4PYl
341
4d
182
5s
51
5pln
30
5p3i2
24
4f
3
170
220
Binding Energy (eV)
m.
t64
W
Pcrkill~Elmer
Corporation
Physical Electronics Division
Handbook or X-ray Photoelectron Spectroscopy
Ytterbium Yb
Atomic Number 70
Mg Ko.
44
4f
4,
5p
t200
1000
800
4d Binding Energy (eV)
COOlp>Und Type
Vb
Yb,Q,
181
182
•
183
184
400
600
Binding Energy (eV)
185
186
o
200
4d; 182.4 eV
4d
•
170
22Jl
Binding Enogy (tV)
Perkin·Elmer Corporation II\,
Physical Electronics Division W
165
Lutetium
Handbook of X-ray Photoelectron Spectroscopy
Lu
Atomic Number 71
Monochromatcd Al Ka
4d
'f
'PJn
4,
5p
5,
1400
1200
1000
800
600
o
200
400
Binding Energy (eV)
Line Positions (eV)
41112 =7.3 eV
.1.=1.5eV
41",
Photoeleclroo Lines .
4,
509
55
57
20
10
4pln
413
'l'J/2
3!0
4dl12
206
4d",
1%
SPIn
5pl12
4f",
4f7(2
34
T1
9
7
o
Binding Energy (cV)
if\
166
Perkin-Elmer Corporation
\j!' Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Lutetium
Lu
Atomic Number 71
4f
Mg Ka
4d
4PlIl
5p
1000
1Z00
800
600
Binding Energy (eV)
4fln Binding Energy (eV)
Compound Type
5
Lo
6
7
..
8
9
400
zoo
o
4fln =7.3 eV
t::.=1.5eV
4flll
4f712
\
10
./
o
Binding Energy (eV)
Perkin-Elmer Corporation
Physical Electronics Division
167
Handbook or X-ray Photoelectron Spectroscopy
Hf
Hafnium
Atomic Number 72
4f
Monochromated AI Ka
NNN
1l4<l
1310
Binding Energy (tV)
1280
4PlI2
4s
5p
5s
1400
1200
1000
800
400
600
200
o
Binding Energy (eV)
Line Positions (eV)
4f712
41," = 14.3 eV
t:. = 1.7J eV
Photoelectron Lines
41",
4s
534
'PI" 4Pl12
4dll2
431
380
222
4dY2
211
5s
lp,"
5Pl12
41",
16
4f112
14
63
38
JO
Auger Lines
2S
"
N~61N1
N4N~1N7
1311
1084
1306
1013
(AI)
(Mg)
5
BiIldill& EaeW (tV)
168
m
W
l'erkin·Elmcr Corporation
Physical Elettronics Division
Handbook of X-ray Photoelectron Spectroscopy
Hafnium
Hf
Atomic Number 72
'I
NNN
Mg Ka
'dl/1
1100 .
'''''
"
BMiDg Energy (tV)
Sp
1200
1000
800
600
400
200
o
Binding Energy (eV)
4fJn Binding Energy (eV)
Compound Type
HI
HIO,
I'
-
IS
4fJn =14.3 eV
16
!J = 1.71 tV
4dl/1 Binding Energy (eV)
Compound Type
HI
HfO,
2lJ
212
~
Perkin-Elmer Corporation
Physical Electronics Division
214
"
15
Binding Encro (tV)
5
m
W
169
Tantalum
Handbook nf X-ray Photoelectron Spectroscopy
Ta
Atomic Number 73
Monochromated AI Ka
NNN
4f
1J40
NNN
1280
1310
Biooing Energy (eV)
4pJll
4,
5p
Is
1400
1200
1000
800
600
400
200
o
Binding Energy (eY)
m
170
W
Perkin-Elmer Corporation
Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Tantalum
Ta
Atomic Number 73
MgKa
4f
NNN
NNN
4dsn
'd312
1100
1050
Binding Energy (eV)
4,
5p
5,
1200
!OOO
800
600
Binding Energy (eV)
400
o
200
4f7n Binding Energy (eV)
Compoulld Type
T,
T,S
ToS,
HaMes
21
22
•
T,,o,
Br6CT36CIn)(BILlNh
Cr.cr..cI,>XE4Nh
23
2'
25
26
27
28
4fm =21.9 eV
.1.= 1.91 eV
--.
--
4fm
4f",
"
JLj_~_ _-~----'2::j-~--'~--~--:15
Bioding Energy (eV)
I)crkill-Ebncr Corporation
Physical Electronics Division
./
'"
Thngsten
Handbook of X-raj' Photoelectron Sptctroscopy
W
Atomic Number 74
Monochromated AI Ka
NNN
.1
1340
1310
Binding Energy (eV)
1280
NNN
'''''
4s
5s,
1400
1000
1200
800
600
200
400
o
Bioding Energy (eV)
Line Positions (eV)
4f7n = 31.4 eV
4f112
6=2.18eV
Photoelectron Lines
4f.,
's
594
4Pl12
'91
"'"
5s
75
5Plfl
41
5py>
J7
.24
4dy>
4d",
256
2'3
.1.,
4fm
13
31
Auger Lines
.!'"
V
NsN61 Nl
N4 N67N7
13~
1307
101'
1087
45
15
Bioding Er.ergy (eV)
"
t1"\
172
(AI)
(Mg)
W'
Perkin-Elmer Corporation
Ph)'sical ElectroniCs Dhrision
Handbook of X-ray Photoelectron Spectroscopy
Thngsten
W
Atomic Number 74
MgKa
/
NNN
4'
NNN
1100
1050
4d,n
Binding Energy (eV)
4dl/2
'Pl/2
4,
'PIn
~
J\
'--'\.
~
1000
1200
600
800
400
o
200
Binding Energy (eV)
4fm Binding Energy (eV)
Compound Type
31
32
33
34
35
36
37
4fm = 31.4 eV
38
4f712
A=2.18eV
W
we
4fSll
WS,
Halides
WOC,
Oxides
Tungstate
•
•
'h,Wl\
a.W(E1,ph
a,s,W(CO)](C>!ls)
""PWeCO.
•
•
Perkin-Elmer Corporation
Ph)'sical Electronics Division
5pl/2
"
/
II
Binding Enc:rzy (eV)
25
m
W
173"
Rhenium
Handbook or X-ray Photoelectron Spectroscopy
Re
Atomic Number 75
4fm
Monochronlliled AI Ka
NNN
4'",
1340
.
1310
881;Tl& Enqy (eV)
1280
NNN
1400
1200
1000
800
600
Binding Energy (eY)
400
o
200
Line Positions (eV)
41112 =40.3 eY
lJ. = 2.43 eV
Photoelectron Lines
4s
4PI12
625
518
4p)n
446
4dll2
4dstl
5$
4f5(2
4fm
274
260
99
42
40
Allger Unes
v
40
Binding Ene!Ey (eV)
N>N6,N,
N4N61N7
1122
1089
lJll9
1076
30
iY\
174
(AI)
(M,)
Perkin-Elmer Corporation
\jI Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Rhenium
Re
Atomic umber 7S
Mg Kll
4fm
NNN
4f",
1100
1050
NNN
Binding EneTID' (eV)
4s
5s
1000
1200
800
600
Binding Energy (eV)
Chemical State Database
Compound Type 40
R,
R<O,
R<O,
41
•
42
K,..a.
43
•
45
•
46
47
200
4fm = 40.3 eV
Ii = 2.43 eV
o
4fm
4f",
I
CbReO(PhlP):l
ChReN(PhlPh
o,R«EtsPh
C""~PM"Phh
•
ChRt(PMelPhh n~r
fIi
ChRc(PMe:2Ph).lttlrtS •
CIReNiPMezPh4uallS
44
400
Perkin-Elmer Corporation
Physical Electronics Division
v
"-
~
5O.L~_~~-~-:::40---''''--''''---=~~30
Binding Energy (eV)
(J)
175
Osmium
Handbook or X·ra)' Photoelectron Spectroscopy
Os
Atomic Number 76
Monochromated Al Ka
NNN
12911 .
1340
Binding Energy (eV)
5p
1400
1000
1200
800
600
Binding Energy (eV)
200
400
o
Line Positions (eV)
4fm ; 50.7 eV
1J.=2.neV
4fm
Pbotoclectroo Lines
4f5n
4,
658
4pw
548
4Pll2
471
5>*
41"
54
4rm
5p
51
44
89
4d3n
293
4d"
279
Auger Lines
V
\
OJ
'"
Binding F..llCIlY (eV)
5p
N5N67 N7
N4N61N7
1326
1093
1078
J31l
40
'WilllalC
if'
176
(AI)
(M,)
Ilerkin-Elmer Corporation
\ j I Physical Electronics Division
Handbook of X.ray Photoelectron Spectroscopy
Osmium
Os
Atomic Number 76
4f712
MgKa
4fm
NNN
NNN
1110
11l8O
Binding Energy (eV)
1050
4dJ12
5p
1000
1200
800
600
400
200
Binding Energy (eV)
o
4fm Binding Energy (eV)
Compound Type
50
51
52
53
4fm , 50.7 eV
4fm
54
1J.=2.72cV
Os
Oso,
•
K,Os~
K,OsBr6
K20SCI6
•
OSC14(EIJPh
OsClt(phPMC2h tfilns
OsCl,(PhPMeVJ mer
OSC!2(PhPMe,}l tr3ns
Perkin-Elmer Corporation
Physical Electronics Division
•
v
60
50
Binding Energy (eV)
40
177
Iridium
Handbook of X-ray Photoelectron SpectroSCOlly
Ir
Atomic Number 77
Monochromated Al Kcr
K.
4fm
7
NNN
4[5/1
\350
\290
1l2l1
Binding Encrgy (eV)
4d5/1
4d,n
NNN
4PJn
4,
\...
1400
1200
1000
4Plfl
~~
800
600
Binding Energy (eV)
" ~
400
200
if\.
5p
o
Perkin-Elmer Corporation
\j! Physical Electronics Division
lfandbook of X·ray Photoelectron Spectroscopy
Iridium
Ir
Atomic Number 77
4f712
MgKa
NNN
41111
NNN
.
1110
1060
Binding EDagy (eV)
4PII2
4,
5p
lZoo
1000
BOO
600
Binding Energy (eV)
400
o
ZOO
4f," Binding Energy (eV)
Com(XlUnd Type
60
61
62
63
64
4f," = 60.9 eV
65
4f712
6=2.98eV
Ir
IrCb
K2IrBr6
KJlrBr6
K2IJC16
K,lrC~
v
(NH.»I~
(NH.lJ!~
KlrCI,NO
K1n1CO)oCl.
K,Ir,(COl<Cb
Perkin-Elmer Corporation
Physical Electronics Division
\
"
"
Bindillg Enetu (eV)
"
m
'Ie'
179
Platinum
,.
Handbook 01 X-ray Photoelectron Spectroscopy
Pt
Atomic Number 78
4f7ll
Moncx:hromated AI Ka
NNN
l350
4f5J2
1300
Binding Energy (tV)
4<1512
NNN
4d1ll
4PlI2
A,
1400
HXX)
1200
800
600
200
400
o
Binding Energy (eV)
41Jn = 71.2 eV
Line Positions (eV)
41Jn
A=3J3eV
P~oelectron
41112
V
4s
J25
4Pl12
(if)
4P311
520
4d)12
332
5s'
103
4fll2
14
4f712
71
5p
12
"
Binding Energy (tV)
"
N.$N67N1
1114
N4N67Nl
1101
I~
1317
(AI)
(Mg)
''''''''''
'"
180
4d",
315
Auger Lines
\.
Jj
Lines
W'
Perkin-Elmer Corporation
Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Platinum
Pt
Atomic Number 78
r:::::::
MgKa
4fm
NNN
4f5f2
\
NNN
1OJ{)
Binding Energy (eV)
1120
1ll6ll
4d",
"'311
4P312
4,
4Pln
''.--
~
5p
\
1200
1000
800
600
Binding Energy (eV)
4fJn Binding Energy (eV)
ComlXlund Type
PI
Pt$i
Pt.2Si
PtCI2
PtC].
Oxides
Pt(OH)2
(IV) Halides
ChP((PhlPh cis
7l
72
73
74
75
76
77
400
4f3l1 =71.2 eV
78
o
200
4fm
!J.=3.33eV
4fsn
••
•
•
\
bPt(MejPh cis
bPt(MelPh (rans
85
15
65
Binding Energy (eV)
Perkin-Elmer Corporation
Physicall!:lectronics Division
'01
Gold
Handbook orx-ray Photoelectron Spectroscopy
Au
Atomic Number 79
4fm
Monochromated AI Ka
4flll
4dsfl
NNN
4dJ12
4p312
NNV
4,
"
4Pln
A
/"
5p
v...
1400
1200
800
600
Binding EneIgy (eV)
1000
41,. =84.0 eV
o
Line Positions (eV)
4fm
!J.= 3.67 eV
200
400
Ptxltoclectron Lines
4111l
4,
4pln
4pl/2
76J
643
547
4dlfl
353
4d1ll
335
5,'
110
4f512
4f712
Spln
88
84
74
5plfl
57
AugCf Lines
\,
100
9<l
Biooing &erg)' (tV)
N61O~5045
N,NoN67
[416
1183
1342
1109
1091
NsN61 V
1247
1014
(AI)
(Mg)
80
'Ell'fIIale
m
182
N<NoN61
1324
'lI
Perkin.Elmer Corporation
Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Gold
Au
Atomic Number 79
4fm
MgKIl
41",
NNN
4<1",
4dll2
NNV
41'>2
4PI12
4,
A
~
5p
l-c
1000
1200
600
Binding Ene'tY (eV)
800
4fJn Binding Energy (eV)
.Compound Type
83
Au
AuSn
AuSI\4
YbAu2
CIAuPhlP
C1Aul!'bJPb
ChAuPhlP
(PhlP)AuNOl
ClAu(P!lJAs)
(-AuSPEl,s-l>
84
85
87
0
tJ. = 3.67 eV
4f",
\
'00
if\.
W
200
4fJn =84.0 eV
88
•
••
•
•
(-AuCH2PEI2CH:rn
l)erkin·Elmer COrj>oration
Physical Electronics Division
86
400
90
Binding Ener!y (eV)
80
,,,
Mercury
Hand,book of X-ray Photoelectron Spectroscopy
Hg
Atomic Number 80
4fm
Hg in HgS
l-J
Monochromated AI Ko:
NOO
4fll2
1380
1415
Binding Enagy (eV)
4dSf2
"'312
4plI2
I~v
S
,
4Pl12
4,
" /
c
S
5d
LA
I
J(
1400
1200
1000
800
600
Binding Energy (eV)
400
o
200
Line Positions (eV)
4fm
4fw = 101,0 eV
Photoelectron Lines
!'J=4.05eV
4f512
4s
805
4PIf2
'fill
105
4f712
682
\01
4p312
579
4d3fl
381
4dll2
361
5s'
125
5PIIl
85
5pll2
67
5d312
12
5d512
10
Auger Lines
N704S045
V
'15
184
105
Binding Energy (eV)
1412
1179
\
NsN70
1246
1013
N4 N60
1230
997
(AI)
IMg)
95
*F.slimale
if\.
W
Perkin-Elmer Corporation
Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Mercury
Hg
Atomic Number 80
Hg in HgS
4[7/2
MgKa
NOO
41",
1185
1165
Binding Energy (eV)
1145
S
4d,n
4dm
4pm
NNV
4,
S
4p1/2
C
5d
5p
1200
1000
800
600
400
200
0
Binding Energy (eV)
4fm Binding Energy (eV)
Compound Type
99
100
101
4f712
4fm = 101.0 eV
102
L\ = 4,05 eV
Hg
4f",
Hgo.8C&12Te
HgS
Hgh
HgBr1
HgCh
HgF1
HgO
Et2NCciH4HgOAc
\
Hg(thiodibenzoylmeh
(P~PI2Hg(SCN),
Perkin-Elmer Corporation
I'hysical Electronics Division
115
if\
\lI
105
Binding Energy (eV)
95
185
Thallium
Handbook or X.ray. Photoelectron Spectroscopy
TI
Atomic Number 81
Monochromated Al Ko:
NOO
41",
1400
1415
1385
Bindin& Energy (tV)
4dsa
4dll2
NNN
4Pln
NMV
'PIa
45
Sd
0
Spin
1
5Pl12
1400
1000
1200
800
400
600
200
0
Binding Energy (eV)
4fm = 117.1 eV
tJ.= 4.42 cy
Line Positions (eV)
4fm
Photoelectron Lines
4f",
4PlI2
4dll2
610
406
4d",
385
55'
133
4f712
5pln
95
5plI2
74
5dll2
IS
Sd",
118
"
'PIn
847
no
4f",
122
13
Auger Lines
U
lJO
120
Binding Enttu (eV)
"-
N704so..s
..0.,0"
1401
1199
1166
1168
1008
",".,0,
1m (AI)
989 (M,)
110
"Esti.lJe
m
186
NsN,o,
1241
W
Perkin-Elmer Corporation
Physical Electronics Division
Handbook of X~ray Photoelectron Spectroscopy
Thallium
TI
Atomic Number 81
4f712
N()()
Mg Ku
41",
1110
"65
1110
Binding Energy (eV)
NNN
4<1",
44l/2
NNV
4Pl12
4,
4Pln
0
54
5p
SOO
1000
1200
600
Binding Energy (eV)
41m Binding Energy (eV)
Compound Type
TI
Til
TIB,
TIC1
TIP
TI,s
TIIS3
TI,o,
. CbTl{pyridineh
CI611z(PhPEtI)S
117
118
---
Perkin-Elmer Corporation
Physical Electronics Division
if\
'=II
119
400
200
41m =117.7 eV
120
li = 4.42 eV
0
4f712
41"
\J
no
120
Binding Energy (tV)
110
Lead
Handbook of X-ray Photoelectron Spectroscopy
Pb
Atomic Number 82
Monochromaled Al Ka
NOO
4fll2
13.,
1<05
NOO
1375
Bjndin~ Energy (eV)
4d1l2
4dJl1
NNN
4"",
NNV
4,
4Pln
5plI2
50
/5PJI1
1400
1200
1000
600
800
400
0
200
Binding Energy (eV)
Line Positions (eV)
4rm
4f7n = 136.9 eV
1J.=4.86eV
POOloelcdroo Lines
4fll2
4,
893
4pll2
4"",
644
4d)12
434
4d1l2
412
5s'
762
4f)12
142
4f1l2
Spin
5"",
107
84
5OJl1
21
5dl/2
1J7
ISO
18
Auger Lines
U
150
1<0
Binding EntItY (eV)
\.
N7045 0 45
N6045045
1394
1J91
1158
1161
130
"Esti1lllle
m
188
(All
(Mg)
W
Perkin-Elmer Corporation
Physical Electronics Division
Handbook of X-ray Photoelectron Spcttroscopy
Lead
Ph
Atomic Number 82
00
MgKa
NOO
4f",
. 1110
NNN
1140
1155
Binding ElltID' (tV)
4<1",
NNV
4<1312
4Pl12
4,
4Plf2
Sd
Sp
1200
1000
800
400
600
200
0
Binding Energy (eV)
4fm Binding Energy (eV)
~C~om~poo~nd~T2ype~ _ _c.13~6
Pb
PbT,
PbSe
Halides
PbO
PbA
I'bO,
Pb(OHn
Pb(No,n
137
139
417n = 136.9 eV
140
A= 4.86 eV
••
•
m
\M
4f7n
4f",
••
PbSOl
PbSO.
Perkin-Elmer Corporation
Physical Electronics Division
138
v
150
140
Bindill& F..nerty (tV)
no
Bismuth
Handbook of X-ray Photoelectron Spectroscopy
Bi
Atomic Number 83
Monochromated AI Kn
4fm
)
NOO
4f",
1390
1405
'1375
Binding Energy (eV)
NOO
4d",
4dYl
NNN
.,
NNV
4pYl
5d
4PII2
•
Spin
>
1400
1000
1200
800
600
400
o
200
Binding Eoergy (eV)
4f7fl
Line Positions (eV)
4fm ; 157.0 eV
6=5.31 eV
PIlotoeloctron Lines
4f",
.,
4pl/2
4dy!
464
Is'
806
''''
679
4d",
940
4Ml
161
'f",
4fm
5P1l2
162
157
119
5py!
93
5dYl
27
5d",
2'
Auger Lines
...J
170
160
Billding EJJeTgy (eV)
190
N,o.,o.,
"-
1387
1154
150
N604S0 45
1383 (AI)
1150 (Mg)
tE$limale
m
W
Perkin-ELmer Corporation
Physical Electronics Division
Handbook of X-ray Photneletlron Spectroscnpy
Bismuth
Bi
Atomic Number 83
41m
Mg Ka
NOO
41",
NOO
IISS
·1170
\140
Binding Energy (eV)
NNN
44512
NNV
4pyz
4,
4Plf2
54
5p
1000
1200
800
400
600
200
0
Binding Energy (eV)
4fm Binding Energy (eV)
Compound Type
156
157
ISS
159
160
161
4fm =157.0 eV
162
!J.=5.31eV
Bi
Bi2S)
Bih
BiF)
4f712
4f",
Bi20J
BiOCl
NaBiCh
BhMo06
BhTi107
(BiOhCr207
Bi,(SD.h· H,Q
Perkin-Elmer Corporation
Physical Electronics Division
•
''
160
Binding Energy (tV)
ISO
'0'
Thorium
Handbook of X-ray Photoelectron Spectroscopy
Th
Atomic Number 90
Monochromated Al Ka.
,['"
NOO
1415
14~
'<00
Binliog Energy (eV)
NOO
4<l,n
'd312
'P312
4Pl12
5d",
5d312
AI
1400
1200
1000
4f7/2
4f",
6s6p
0
Photoelectroo Lines
l/
340
Binding Ene'!)' (eV)
'Pill
1170
'P312
4d1ll
4<l,n
4f1ll
4f7/2
1330
965
113
616
342
333
5s
Spill
5P312
5d1ll
5d",
294
234
111
93
85
6s
'2
6p,.
25
6p",
11
Auger Uncs
N60n V
N67045045
N70405
N67045 V
1419
1404
1335
1239
1186
1171
1'02
1006
(AI)
(Mg)
J25
-Estillllle
m
192
\ /
200
400
,,'
]55
5p
Line Positions (eV)
4f,. = 333.2 eV
A = 9.34 eV
800
600
Binding Ene~y (eV)
5,
'lI'
Perkin.Elmer Corporation
Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Thorium
Th
Atomic Number 90
MgKo
NOV
NOO
""
1200
Binding Energy (eV)
4d3J2 4dsn
AT
1200
800
1000
600
Binding Energy (eV)
4fm Binding Energy (eV)
ComJXlUnd Type
Th
ThO,
-.
333
ThF,
334
3J6
335
400
'fm =333.2 eV
337
IJ.:=9.34eV
5s
5p
o
200
4fm
4f512
• •
4d", Binding Encrgy (eV)
Compound Type
675
67'
~
-
Th
7,0,
Perkin-Elmer Corporation
Physical Electronics Division
676
if\
\II
\
315
340
325
Binding EoaJy (eV)
,.,
Uranium
Handbook or X-ray Pholoeledron Spectroscopy
U
Atomic Number 92
Monochromated Al Ka
'fm
NOV
1<00
BiOOing Energy (tV)
1430
1310
NOO
4dY2 .,
.d312
'P312
0
5d~
ls C5Pu15py,
1400
1200
1000
800
600
400
200
5d",
I
6s 6p
0
Binding Energy (eV)
m
194
Perkin-Elmer CorporatiOi
' " Physical Electronics DivisiOl
Handbook of X-ray Photoelectron Spectroscopy
Uranium
U
Atomic Number 92
MgKn
4f",
NOO
-.
NOO
"'"
1140
Binding f.nefgy (eV)
NOV
jPlIl
1000
1200
800
600
Binding Energy (eV)
4fm Binding Energy (eV)
eo"""""" Typ<
3n
378
379
380
381
382
400
4fm = 377.3 eV
383
6 = 10.89 eV
U
Tellurides
o
200
4fm
4r
'"
Selenides
Sulfides
Halides
lli;re,
lliy Hal""
U(So.h
U(aeoc~
\.
CaU04
K2UF6
400
J8j
370
Binding Energy (eV)
Perkin-Elmer Corporation
Physical Electronies Division
([>
195
III. Appendix
Appendix A. Auger Parameters
The following Iables plot /he binding t:~'V of l~ mo51 illlt!1lSt phofotltclrtJfl liM WnrLS the kiMtic tntrg, of lht most inttrest Auger Irtmition. The Augtr
fXJromtttr plOiS QIlIUt/ul for junher Sl!parotion ofthe chtmical stOIa
1344
662
Fluorine
Compound
Pis
FKLL
PbF,
B>F,
K}!'eF,
NaF
CdF,
CuI',
C,F,
C,F,
LaF,
Zn F2
"'F,
SmF)
K,z,F,
C>F,
NdF,
ThF,
K21iF,
Sd',
NiF2
LiF
btl',
K2Ta fJ
YF,
N<l211F6
NaSnJ1
HIF,
K2Nbry
Na)A1F6
MgF,
CaF
N.,ad',
N32S iF6
KSbF,
NaBF~
NiOOCCF3
p-(Cr"l"CF,)
198
682.1
683.6
683.1
684.0
684.5
684.5
684.5
684.5
684.5
684.5
684.6
684.6
684.6
684.6
684.8
684.8
684.9
684.9
• 685.0
685.0
685.1
685.2
685.2
685.3
685.3
685.3
685.4
685.•
685.5
685.8
685.9
Ml.9
686.0
686.6
681.0
688.'
689.0
659.3
658.5
656.2
656.0
655.0
656.0
651.0
656.2
656.2
658.0
655.6
651.2
651.0
655.1
655.4
651.0
651.0
655.1
656.3
655.5
654.1
656.4
655.0
655.8
655.1
655.3
655.3
655.2
654.1
654.4
653.8
654.0
653.0
656.6
652.8
652.9
652.4
/ 1/
i
1/ /
r
V I 1/ •
1/ V 1/
r
1/ ~ 1/
[Meta li
1/ I} II 1/
1/ 1/ ~ I~ 1/ 1/
1/ 1/ Ii 1/ 1/
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ASF
1342
660
658
1340
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•
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656
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654
I
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1336
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690 689 688 687
."
686 685 684 683 682 68\ 680
Binding F..Iler&Y (tV)
if\.
Perkin·Elmer Corporation
' " Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Appendix A. Auger Parameters
1000
Sodium
em-od
Na2SeO)
Na2Cil4
Nil2 Mo04
NaAs02
N.F
Na:/OO.
N:I)P04
NaH,PO,
N"snOr 3H,o
NaOAc
NaP
Na2S04
NaOOCCH2SH
Na2SO:J
N.
N.
Nail<
NaNO:J
Na,GO.
NaCl
Na,COJ
Na2 HP0 4
Na2S20J
N.ND,
Na,Cr,o,
N.I
NaB,
Na,Co,
NaOAc
N.
NaCl
NaCl
Na20
Mol Sieve Y
NaBF4
An rides
,
Na Is
N. Kll
Ilio&I &azr (eVI Kioeuc: FJqy (tV)
1070.8
1070.8
1070.9
1070.9
991.0
990.5
991.0
99o.J
1071.0
1071.0
1071.1
1071.1
1071.1
1071.1
1071.2
1071.2
1071.2
1071.3
1071.4
1071.4
'1071.4
1071.4
1071.4
10715
1071.5
I07l.S
1011.6
1071.6
1071.6
1071.7
1071.7
1071.7
1071.7
1071.8
1071.8
1072.5
1072.5
1072.6
1072.7
Perkin·Elmer Corporation
Physical Electronics Division
-
998.6
991.2
990.1
989.8
990.1
989.9
998.6
989.8
990A
990A
994.1
994.5
990.6
989.6
9912
990.1
989.8
989.1
990.1
989.8
990.6
998
/
996
994
99
V
V
/""
2V
990
988
987.1
~
Y
V
V
V
./'
986L
1074
V
./'
V
./'
991.2
990.6
9S9.8
9S9.9
994.1
990.1
990.0
989.8
981.8
V
V
V
V
V
V
V
V
II
I
V
2084
1072
~
I
a
+
~
~
V
2082
V
V
2080
I
Binding Energy (tV)
>
~
I
,I"
./ V
'V
l----<
1073
~
I
I
V
2086
o
I
Vi
V
Is
V
,
l--('
omc Compo
nds"
•
V
V
2088
1071
1070
~
Appendix A. Auger Parameters
Handbook or X-ray Photoelectron Spectroscopy
1395
Aluminum
V
1394
Al2p
~
AI
AlAs
A1203, gamma
A120), alpha
AbO}, gamma
Ai(OH)30 gibbsite
AlzOJ, sapphire
AIOOH, boehmile
AI(OHh, hayerite
A1203, gamma
AI KLL
&crzl'lcV) K-* "*'b' leV)
n.8
73.6
73.7
73.9
74.0
74.0
742
74.2
74.2
V
1393
1393.3
1391,2
1387.8
1392
1388.2
1387.8
1387.4
1387.8
1387.6
74.3
1387.8
74.4
1389.0
Al:2SiOj, sillimanite
74.6
13&6.9
~
~
••i
;;
1389
1388
./
V-
V
/"
V
1390
V./
VV
V
1391
1387.7
AlN
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V
./
V-
V
V
/'
./
V V
V
V
1387
1386
1385
75
V
l-;) id~
.J V
i? V-
I
./
I
V-
/'
V
/"
/'
V
/"
V
M
V
V
/'
~i Ie
A
/"
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VV
V
V
/"
/"
./
V-
VV-
V
V
/"
V
/"
V
/"
~
/"
/"
/"
V
1467
V
1466
V
1465
1464
V
V
/"
/"
V-
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V
/"
/"
V
V-
V
1463
V
1462
V
1461
V
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74
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73
72
BimJing Energy (cY)
200
m
'II
Perkin-Elmer Corporation
Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Appendix A. Auger Parameters
1718
1618
Silicon
Compound
I
Si 2p
lWill& &qy (~V)
s;
MoSi:!
PdSi
Mol Sieve A
Hydroxysodalite
SiJN4
Mol Sieve X
Natrolite
Mica. muscovite
Wollastooii, Capi:P9
jrMethylsiL (linear)
LiAISi2~ spodumene
NaAlSi30s. albite
A1Si~ sillimanite
,
jrPhenylsil. (resin)
Mol Sieve Y
Pyrophyllite
jrMelhylsi1. (resin)
Kaolinite
Talc, M&:jSi40"iOHh
Si02, alpha cristobal
HZeolon
Si02, gel
Si02,Vycor
Si02
SiD:!, quartz
1716
,
Metal ilie'
Si (KLL)
,,-.:
>
c
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~
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1616
99.5
99.6
99.8
101.4
101.7
101.8
102.2
102.2
102.4
t02.4
102.4
1025
102.6
102.6
102.7
102.8
102.9
102.9
1010
lOll
103.3
1013
1014
103.5
1016
1017
1714
1616.6
,~
,
1617.4
1610.0
1609.4
~
1614
1712
:;
1609.6
"t,
1609.2
.g
l609j
1610.0
1608.7
1609.2
1608.8
1609.0
1608.9
1608.8
c
w
.'
d
1612
1710
.•,
~
1610
II
1608.4
1608.3
1608.5
1608.8
1608.6
I.
1608
"
iL---=---1--....,IL::-.---+--t----t----1
1606
14-t-++f-+-t-H-++++-H-t++t+lH-+-H-t-H+l
104
103
102
101
Binding Energy (eV)
Corporation 'IY\
Physical Electronics Division W
~
3
1617.2
1610.1
1610.7
1612.6
1609.4
1609.6
1609.6
••
100
99
98
Perkin~Elmer
201
,~
,m
•
,~
Appendix A. Auger Parameters
Handbook of X.ray Photoele<:lron Spe<:lrosOOp)'
2280
2118
Sulfur
S
2116
Compouoo
WS,
NiS
WS,
Na2S03
Nlt2S 0 3
Nlt2S0J
So,
So,
a,sO,
SF,
SF,
S2p
s..-, &aa:t '"'
162.1
162.2
163.0
165.6 .
166.6
167.2
167.4
168.1
1693
174.4
177.2
1/II 1/
1/1/1/1/
1/1/1/1/1/
1/IIII I 1/
/ 1/II71/
/ / 1/1/1/
1/ '/ / 1/1/
lLII ;;11/
IIII II II
2276
.
S KIl.
K-. &azy ~V)
2114
2115.6
2116.1
2115.6
2112
2108."5
21085
2108.5
21061
21061
2108.0
21005
21005
II~ /
2278
~
>
2110
~
,
~
••
.,,
2108
•
" 2106
2104
2102
2100
2098
180
178 176 174
172 170 168 166 164 162
2274
2272
160
Binding Energy (tV)
202
m
W
Perkin-Elmer Corporation
Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Appendix A. Auger Parameters
921
1853 1852
r---,-,---,-,---,--'i-=---T-...
1851
Copper
o,2p
Compound
o,LMM
920
B~ Enorl)' (eV) ki_ &laJ:J(eVJ
Cu2MO)OlO
Cu2Se
CuAgSe
CuSe
o,S
CuBr2
o"s
CoC!
C..cl
0.,0
0.,0
0.,0
a.,o
0,
Ca
c...zn"
Ca
Ca
Ca
CuCN
o,ClCNlJ
0,0
o"M",o,
CuMo04
CuCr204
CuSiO]
c..co,
Ca(OHh
•
931.6
931.9
931.9
932.0
932.2
932.3
932.5
932.5
9325
932.5
932.5
932.5
932.5
932.6
932.6
932.6
932.6
932.6
932.7
914.5
935.1
OC"
Cu(NO,h
935.2
CaSo,
935.5
935.5
Cal',
Cal',
CaF,
93H
936.8
937.0
Perkin-Elmer Corporation i'f\
Physical Electronics Division \j!
919
1849
•
,
,•
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,
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917.4
914.5
918.1
916.6
916.6
918.0
915.2
916.3
916.2
9153
915.3
915.6
916.0
934.1
3
917.7
933.1
•,
~
918.4
917.9
916.9
915.0
915.6
916.2
9161
916.6
9171
918.6
918.7
918.6
918.6
918.7
918.6
>
c
~
••
916.5
917.6
933.2
933.7
934.1
934.6
934.9
935.0
1850
>
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,
918
1848
917
1847
c
.,
W
•
c
916
>!
915
I'-----f--f-----,l----f--f--I-:f----j---j
914 f'-----;/'---f--+-f--j'---+---j--t
913 R-r-t+i'+tt+f++tt-ft+++f+tt+t++ttt++++t++++l
938 937 936 935 934 933 932 931
930
Biming Energy (eV)
914.4
914.8
•••
~
Appendix A. Auger Parameters
Handbook of X·rny Photoelectron Spectroscopy
995
Zinc
994
Compound
Zn 2p312
211 LM M
Bm;" Entru (eV) Kllltllc l!nt:p (eV)
1021.4
1021.6
Zno
1021.75
In
l()ll.!"
In
J()lI.!9
ZnClz
1021.9
Zn4siz07(OHn' 2Hj) 1021.96
z:,S
J()l2
lnF,
J()l2.2
lnO
J()l2.5
lnF,
J()l2.8
Znlz
1023
ZnBrz
1023.4
Zn(acacn
Cu#nl6
993
981.7
I
m.7
9885
m.1
m.1
989.4
981.3
989.7
986.2
981.7
986.7
988.7
981.3
992
99 I
~
j
.,
~
"
/
990
989
V
/
8/
98
987
/
V
/
/
/
/
V
/
/
1/
/
6/
985~
"
V
/
1/
1024
V
1/ 1/
V V V
1/ 1/ 1/
1/ V V V
/
I
V/
98
1025
/
~
1/
V
V
I
/
V
1023
V
V
V
V
/
y
Oxi
1/ /
1/
V
Vlalide
,1/
V
1022
/
V
/
/
V
2014
2013
2012
2011
2010
2009
V
2008
V
/
1021
1020
Binding Energy (cV)
204
m.
W
Perkin-Elmer CoqJoration
Physical Electronics Division
Handbook of X-ray Photoelectron SpectroscopJ'
Appendix A. Auger Parameters
1228
1268
1226
1266
Arsenic
Compoond
As 3d
As l.MM
~intF.nau (eV) Kindic
'*'"
NbAs
GaAs
40.8
40.8
1226.0
1225.3
As
41.6
42.8
1224.8
1221.1
1222.3
Ph3As
AS2Sc3
Asl)
MeAsI2
Pb)AsS
N.M>,
Pls,AsO
"'fiJ
As&,
NaH1AsO.
"'fiJ
KAsF,
42.9
43.5
43.5
44.1
44.2
44.3
44.9
45.3
455
46.2
48.0
(eVI
12195
1217.1
1217.5
1213.8
5
1264
I,
1222
1262
•
•m
•
~
,•
", 1220
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1260
1224
~
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0
0
·is
0
;l
1218
1216
V---¥------l----,V--*--+--+
1214 V--+-----;j'~__c;ojL--+--+--+
1212 I't-t+t-¥-r-H-t-f'+-+++-t+t+t-I--t-+l-+-f+-+-t-t-+
52
so
48
46
44
42
40
Biooing t.:rzy (eV)
Perkin-Elmer Corporation
Phv<:i('~II?IM'Irt\n;M: ni"i~i .... n
iI"\.
u.J
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1222.9
12223
1220.0
12195
1218.8
1218.1
•
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Appendix A. Auger J)arameters
Handbook of X-ray Photoelectron Spectroscopy
1310
/
Selenium
Compound
Se
Se
Ph2Se
Pb,Se,
I'h,SeO
Cl2SePh2
12SePh 2
SeO,
N"sea,
H,SeO)
H,SeO,
Sc 3d
ScLMM
1IiIIdiII&&oIv1ev}
KiltticEtlcrs7(eV)
55.1
55.5
55.8
55.8
57.6
57.7
58.1
58.9
59.1
59.2
61.2
/
1308
1306
1301.9
1302.9
1302.1
1301.4
1301.2
,-
1JOI).8
1297.9
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1304
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V V V
Metal
1306.7
1307.0
1304.0.
1304.3
1364
1362 ~
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1360 ,m
0
,
"
1/
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V V V 1/
1/ 1/ 1/ /
1/ V V
1/ 1/ 1/
V V
1358
•
I
Oxide
1300
1298
/
1296
/
62
•
/
61
/
60
59
58
57
56
55
54
Binding Energy (tV)
?or.
m
W
l)erkin-Elmer Corporation
Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Appendix A. Auger Parameters
360
Silver
Metal
Comp.,.,d
AgF2
AgO
AgF
CuAgSe
Ag,5o
Ag,O
A&2 S04
A~
A'IfJ
A",S
Ag
Ag
MgzlAg19
Ag,SO,
A:f)
M&JoA&so
A""'88l
Mg97Ag)
AgOOCCF,
A"jAg,
Ag 3d
Ag MNN
~&azy(eV'
K___ !iazJleVI
367.3
367.4
367.7
367.8
367.8
367.8
367.8
368.0
368.0
368.1
368.2
368.2
368.3
368.3
368.4
368.7
368.8
368.8
368.8
369.0
349.6
355.5
349.3
351.3
351.4
356.6
354.2
350.1
350.6
351.2
358.2
357.9
352.1
354.7
350.6
351.9
351.7
3521
355.1
351.5
I
358
356
V
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>
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35
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722
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720
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,
369
3611
367
366
Binding EneltY (tV)
Perkin-Elmer Corporation
Physical Electronics Division
?"?
Appendix A. Auger Parameters
Ha~dbook
of X-ray Photoeledron Spectroscopy
386
Cadmium
385 f--+--+--+---"jL--,jL--~
Compound
Cd 3~,V2
Cd MNN
Kjodillg FJI<IV (eV) Ki. Eneru(eVj
orr,
Cd
CdO
CdS,
CdS
Cd!,
CdI',
404.9
405.0
405.2
405.3 .
405.3
405.4
405.9
787
384
3814
383.8
382.2
383
381..
381.1
381.0
382
378.8
;;-
",t
w
.",,
381
>
380
~
379
I A ri e
378
m
376
375
408
407
406
405
404
403
402
Binding Energy (eV)
208
m
Perkin-Elmer Corporation
\jI Ph)'sical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Appendix A. Auger Parameters
856
412
854
Indium
I
Compound
In 3d5J2
Binding Eo.~ (eV)
1095SnS
I,
JnSb
1020 3
hl,Te)
luP
I,P
In,Se3
In,S)
In(OH)]
(NH4hlnF6
In!)
hlBr]
loCi]
InF]
InBr]
4436
4438
444.1
4443
444.5
444.6
444.6
444.8
444.8
Ki~li<:
EntllY (eV)
408.3
4073
404.1
4058
404.8
404.6
403.1
404.8 .
446.6
",,
,,•"
I
I
Oxides
3
408
850
,~
,
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"
m
>
0
w
406
848
Halides
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•
0
;l
404
846
402 iL--+----,f"--+------+"--l---j
400
fLH-++-i+++-t-f'i-++-++++-t-HH-t-++++++t-I
448
447
446
445
444
443
442
Binding Energy (eV)
Perkin-Elmer Corporation
Physical Electronics Division
••
,
•
411.0
445.6
446.4
852
>
0
401.6
406A
408.9
408.0
405.0
446.0
446.0
410
410.5
410.4
445.0
446.0
Metal
InMNN
209
~
Appendix A. Auger Parameters
Handbook of X-ray Photoelectron Spectroscopy
440
Tin
439
Compound
Sn Jdyz
Sn MNN
Binding 1::Io'D' (eV) Kinelic:
So
So
So
485.0
SOS
485.6 .
No,SoD,
SoD,
Na2Sn03
Na2SnOJ
NaSnf)
486.2
484.9
485.1
486.7
486.7
481.2
481.4
~
437.4
437.4
437.4
435.7
431.7
432.7
431.1
431.7
430.8
1/
leV)
438
V
V 1/
V
V
V
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/
1/
l/';
437
436
V
V
Mel~
V
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j 435 /
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.,
V V
V
i
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1/
434 1/
V
V
V
V
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1/
433 1/
V
V
~
1/ 1/
432 1/
Vf Vi
~
923
922
921
920
I
~
m
919
918
I
I
431
/
L
430
488
/
/
487
486
485
"
484
Binding Energy (tV)
210
m
'lI
,>
I
,!
•
l,
0\
Perkin-Elmer Corporation
l)hysical Electronics Division
~
Handbook of X-ray Photoelectron Spectroscopy
Appendix A. Auger Parameters
484
483
fL--.,IL---*--+'-------o¥--+----I
14--f-H-!4++-t+'f-H-+-f'+-+++t+!-H+t++t-+
518
511
516
515
514
513
512
Binding Energy (eV)
Perkin-Elmer Corporation
Physical Electronics Division
211
Appendix B. Chemical States Tables .
11lis compilMioll of all Ihe elemtll/s, listed (llphaM/ical/y, provides specific binding energies of various compol/llds wId pl41't elements, alld a reference in abo
breviated IIQ/ulioll. When Auger lines art listed, they are in k.ine/it tlU?rgy. For compounds with mort than ont chemical stalt, (Ill asterisk dtllotts rhe QlOm whose
binding energy if listed. The rtftrtnces ort upandtd in Appendix C. An] listing with 0 ¢l refers /0 the wort cOnIaintd in this handbook.
This apptndiJ:, most of which was compiled by Dr. Chtlrlu Wagner for Pt,*in-~r, is part if 1M d1emical $Ia~ itklllijiC1Jtioo algori/hIIl c{ the PHI Mftwart and
is also lire basis for 1M XPS dalabast SRD·20 of lire NlJIionaf Ins/ilUle for Standards and Technology (NISI) Further reftrtnus may also be found in Iht journal
Surface Science Spectra published by Ihe American Vacuum Society.
AgJd
Ag
Ag
Ag
Ag
A,
A,
Ag
A,
A,
AgtsSns
A""'..
Alw\~
M!2IAgl9
"""'..
"g"A~
Ag:Yb
CuAgSo
Ag,&
Ag,S
Agi
AgF
Ag~
Ag,Q
Ag,Q
ApfJ
ApfJ
AgJOOl
AgISO.
AglSO.
AgOOCCF)
Ag(OAc)
Ag(J.O.pyri<iohNo,
Ag,&
368.3
368.2
368.2
368.1
368.2
368.2
368.2
368.2
368.2
368.0
368.'
369.0
368.3
368.1
368.'
368.,
361.8
367.8
368.1
368.0
<I>
At-~
"""'16
BiSwSO
BiSw80
BiSwSO
nlBK73
.NyMaSO
HOMS, Schon. WRDM79,
Agi
A,F
351.4
35L2
JlO.I
349.3
Ag~
349.6
A,,o
A,,o
A,O
AgO
Ag,SO.
Ag,SO.
AgOOCCFJ
356.6
350.6
GaWi17, SFS71. Waga15
RRD18, Scho72
HSBSSI
WeAn80
WeAn80
WeAn80
Al
AlA. sapphire
Al
RRO"
AlB}
AIM
WWCl1l
367.7
Gawm
367.3
367.8
368.'
361.4
368.0
367.5
367.8
368.3
368.'
368.'
368.6
Gawm
357.9
WRDM79
Wagn75
RRD 78, PWA 79
GaWi11
HGW75, GaWi77, Scho73
RRO"
HGW75. GaWiTI. Sfbo13
WRDM79
HOW7S
TMR80
Wagn7S
Wago15
HHODSI
SmWt77
Ag MNN
Ag
Ag
Ag
A,
Ag
A~Ag.
358.2
351.9
35\.6
"'.3
"""",
Mg9JA&l
351.7
351.5
352.1
351.9
352.2
CuAgS<
351.3
AIJ.&$
Mg11Agl'
Perkin-Elmer Corporation
Physical Electronics Division
Al~s
r'eJAI
LiAu-t.
AIN
A!,S,
All,
AlB!]
Ala,
A1Fl
AI2(MoO.)J
Ah(W<hl)
CoAJ,O,
"gAlA
NiAhOo
AI""
AllOJ
AI~Ol, sapphire
Aho;' alplla
Aho;' pmma
AIApmma
Schon. FKWFn
AI~pmallI
W<A"'
"
WeAo80
AIOtH, boehmite
Al(OH»), bayerite
AI(OH)), gibbsile
W,,"'"
WeAnS(}
WeAnSO
RRO"
354.2
"'.1
355.1
AI2p
w,,"'"
W,,""
RR07l
RRD18
GaWm
355.5
350.6
AI1Si05> kyanile
AI~iO" mullite
AI~iOs, sillimanile
AIbtte. NaAlSiJOa
72.9
14.4
12'
RRD78
RRD7S
Gowm
Gowm
GaWi71
Scho73
RRD78, GaWm
WRDM79
GaWi17
Wagn1S
TMRW
WIgn1S
•
<I>
11.9
LMKJ7S. Tayl82, WPHK82.
WRDM79, WtTaBO
MOCC1J
136
73.6
Tayl82
Tayl82
73.4
ShTr75
MSC13
MSC1J
MSC1J
MSC1J
MSC1J
MSC13
MSC13
PCLH76
75.6
14.4
14.6
74.6
75.2
14.7
76.3
74.2
74.3
13.6
14.1
74.2
74.3
74.7
74.2
719
717
74.0
70
74.2
74.2
74.0
14.7
14.8
14.6
14.3
NgHc76
PCLH76
HNUW18
LFWS79, NgHe76
Nefe82, MSC13, NSLS71
KlIle83, t..'GDS7S
Tay182, WPHK82
WPHK82
WP!-IK82
B...,
NgHe76
Tayl82. WPHK82
Tay182, WPHK82
WPHK82
AnSw74
AnSw14
AnSw74, WPHK81
WPHK82
1.11
Appendix 8. Chemical States Tables
Bentooite
Kaolinite
Mica, muscoyite
Nalrolitc
Pyrott!yUile
"""'-
II """""
HydftUysOOalite
Mol SicyeA
A~aca:)J
Handbook or X-ray PholoeJedron Spectroscopy
75.0
74.6
74.3
74.3
74.7
74.3
74.8
75.0
73.6
Ban!3. WPHK82
WPlIK&2
WPllK82
WPHK82
WPlIK82
WP'rlK82
WPIlK82
WPHK82, BarrS3
",,s,
",,s,
72'
"S03
KH2AsO.
NaH)I\sO.
NWO,
""'"
AIKLL
Al
AlAs
A'N
AbOl, sapphire
AhOJ.a~
AI,<>,. ,,,"''''
AlOOH
AI(OHh, bayerite
A~OH)}, gibbsite
AhSiOj, sillimanite
Abite, NaAISiA
KlOIinite
Mica, IT\USCOYite
Nalrolite
Pyro~ymle
Spodumeoe
II """""
Hydroxysoda61e
Mol Sieye
I
I
Ar2p
AI inSi
AI inA&
ArinAg
Ar inAu
ArinAu
AI in Cu
AI ia PI
AIintraphite
Ar in graphile
1393.3
1391.2
1389.0
1387:8
1]88.2
1]87.8
1387.6
1387.7
1]87.4
1386.9
1386.5
1386.7
1387.1
1386.5
1386.8
1387.1
1l8S.5
1386.4
1386,9
241.9
241.2
241.9
240.3
240.7
241.1
240,4
241.8
241.5
WP'rlK82, WaTaSO
Tayl82
TaRa81
Tay182. WPHK82
WPlIK82
WPHK82
WF'tIK82, Tay182
WPHK82, Tayl82
WPtlK82
WPHK82
WF'tIK82
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
wm""
WPHK82
WI'HK82
•
CiHa74
KiWi75
CiHa74
KiWi75
CiHI74
Ki't'!'i.75
KiWi75
WRDM79
"'""
'"
"''
..,
AsBr}
"''''
"''''
K""'"
N.""",
N34AstO!
'"'"
NbAs
A''''
AlGoA.
OW
OW
lnAs
AS~l
214
41.6
4\.6
•
Bert8I, BWWI76. MINN7&,
SMAYn, UeOd8I
40.8
41.0
41.0
"'40.'..
40.6
42.9
BWWI76
Tayl82
Tay182
LPMK74
GGVL79. WRDM79. Tayl82,
MINN78. IMNN79
LPMK74
BWWI16,1JeOj82
46.7
45.5
44.2
44.'
44.'
45.4
KAsF.
.<0
LiliF.
49.4
""",
"",IuS
"",,;'"
1'h,lAs{OHh
MeAsl)
""""
I'l4IuB,
".
44.1
44.3
44.5
435
44.6
44.6
BWwn6
RWW176
SMAV12
BWW176
BWWI76
LPGC77, MINN78.
Tayl82, WRDM79
Ben81, BWWI76,
MINN78, SMAV72
SMAV72
WRDM79
T2)'I82, WRDM79
SMAV72
SMAV12
SMAV12
SMAV72, WRDM79
SMAV72
HVV79. SMAvn
BWWl76. HVV79
BWWl76, SMAV12. HVV79
SMAV72
BWWI76
IIVV79
HVV79. SMAYn
AsLMM
'"
NbA.
OW
As2Tel
"'' '
AS2SJ
Ash
"'B"
"''''
"''''
NaHIAsO.
NaAsOl
K1AsF,
""""
"",IuS
""MeAsh
A,3d
43.4
44.'
43.5
45.3
44.'
1224,8
1226.0
1225.]
1225.0
[223.]
12221
1222.9
1218.1
121&.8
1217.5
[217.1
1219.5
1213.8
1221.1
1220.0
1219.5
12213
Au4f
""A.
A.
A.
A.
A.
A.
AoS,
AuS",
YbAul
OAuPh,p
84.0
84.1
840
84.0
83.'
84.'
84.2
84.'
85.1
846
85"
m.
Wagn75, BWWI76
BWW176
T2)'I82, WROM79
BWWl76
.WWI76
BWWI76
BWW176
BWW176
Tlyl82, WRDM79, BWWl76
BWWI76
WRDM79
Tay182, WRDM79
WRDM79
BWWI76
BWW176
BWWl76
BWWl76
•
Asam16
BiSwSO
BiSw80
BiSwSO
PEl"
ALM""
FIIPW7J
FIIPW7:l
WWC78
BMCKn, VVSW77
Perkin-Elmer Corporation
\ j ! Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
C1AlI(PhJ1'h
85.4
BMCK71
CbAlII'hlP
(Ph)f')AlINOl
C1AlI(PhlAs)
(·AuSPEI1S·h
(·AuCHlPEtjCHl-n
87.3
85.4
85.2
84.8
84.0
BMCK71
BMCK71
VVSW77
VVSW77
VVSW77
AuMNN
A"
A"
A"
2015.8
2101.6
2015.7
rEm
WaTa80
WaTa80
B Is
B
B
B.C
AlBl
C",B
CoB
FelB
FoB
HfB,
MnB 2
M02Bj
MoB 2
TiBl
VB,
WjB j
CrBl
BN
Na1806
B,o,
B10)
NaBF.
NF4BP~
NaBH.
H)BO)
NaJB.Or . IOH l O
BlOH I4
Me.NBlHI
NaB~
NH)BFJ
CsH~BF)
EtNH1BF)
McJNRFl
NaBH(OMe))
PhIS!')
Ph)POBF)
PhlOBCb
PhJPBCh
CH)CNBf)
CIC.H~B(OHh
FCJl.B(OHh
(EI)PhI'tBloH Il
(PhJPhI'tB1oH 11
189.4
187.3
186.5
188.5
189.1
188.1
188.4
187.9
188.3
187.2
187.7
188.4
187.5
188.3
187.9
188.0
190.5
192.0
192.0
193.3
194.9
195.2
187.2
193.0
192.6
187.8
187.2
187.5
194.9
194.3
194.6
193.6
192,1
193.3
193.8
192,6
192.7
195.5
191.7
191.7
188.9
188.5
Perkin-Elmer Corporation
Phvsical Electronics Division
"
HHJ70
HHJ70
MECC73
MECC73
MECC73
MECC73
MECC73
MECC73
MECC73
BrWh78
MECC73
MECC13
MECC73
MECC73
MECC73
HJGN70, KOK83, WRDM79
HHJ70
BrWh78
NGDS75
HHJ70, RNS73
RNS73
HHJ70
HHJ70
HHJ70
HHJ70
Hm70
HHJ70
BCGH73
BCGH73
BCGII73
Hm70
HflJ70
HHJ70
HHJ70
HHJ70
HHJ70
BCOH73
HHJ70
HHJ70
Rigg72
Rigg72
Appendix B. Chemical States Tables
Ba 3d512
B.
B.
BaS
BaD
B,O
BaD
Ba(NOJh
BaCOl
BaSO~
BaS04
BaSO.
BaCrO.
BaMoO.
BaRhJO.
780.6
779.3
779.8
779.9
779.6
779.1
780,7
779.9
780.8
780.4
779.9
778.9
779.1
779.6
VaVe80
SiWo8O
WRDM79
SiWoBO
VaVe80
CLSW83
CLSW83
Wagn77
CLSW83
SiW080
ACHT/3
NFS82
NFS82
602.B
597.5
598.4
596,1
VaVc80
WRDM79
VaVe80
Wago77
111.8
111.7
113.8
113.7
113.8
115.3
116.1
115.3
114.7
$
HJGN70, SMKM77, WRDM79
HJGN70, KOK83, NFS82
NFS82
NFS82
NKBP73
HJGN70
NKBP73
NKBP73
157.0
156.9
157.0
157.0
158.9
159.3
160.8
158.8
159.3
159,8
159.9
159.1
158.3
159.7
159.6
161.2
SFS77
LKMP73
WRDM79, MSV73
MSV73
MSV73
MSV73
NGDS75
MSV73
DSBG82
MSV73
MSV73
MaWo75
MSV73
MSV73
MSV73
$
Ba MNN
B.
B>O
B.O
BaSO.
Be Is
Bo
Bo
BoO
BeMo04
BeRh1O.
Bop,
Bop,
NaBeP)
Na1BeF.
Hi 4r
B;
B;
B;
B;
BilS j
Bih
BiPj
BhO)
BhOj
Bi 2O)
BiOCI
NaBiO)
Bi 2Mo<\
Bh1hOr
(RiOnerlOr
Bi 2(S04h' H2O
$
Br 3d
KB'
CsBr
CsBr
68.8
68.1
69.6
$
MVS73
Shlq78
'"
Appendix B. Chcmical States Tables
RbBr
KB'
NaBr
Lin,
CdBr!
CuBrz
HgBl)
PbBl)
""n,,
Co(NH1)pbBr6
Ni(NHJk,Brl
Pt(NHl)..Brl
KIP1Br.
K1Pl:Br.
Cs~ln8r.
RbJSblBr.
Bromanil
Pl4AsBr
PhiSbBr
~NhZnBc.
(E4NhMnBr.
(EllNhNiBrl
HY'OBBr)
H)!'BBI)
BnPt(CHJCONH).
BI'LMM
LiBr
NoB'
KB'
KB.o,
C~HJ1McJNBr
68.'
68.8
68.8
"'1
"'.2
68.9
69.0
68.1
10.0
68.9
68.1
68.4
693
69.2
'0.1
10.1
70.1
661
68.0
67.8
67.9
68.9
69.3
"'68.1.,
1389.2
1"'3
13&8.0
1384,4
1390.1
CI4
Gnptile
Gllphile
CrlC1
F,,c
Hie
Mo,C
NbC
NilC
r.e
ToC
VC
WC
z,c
28,.
2812
1818
KCN
281.1
286.1
N.eN
".,
K,e.,(CN),
K,caiCNJ.
K)r-e(CN;r.
I(,""CN,
KJMn(CNli
285.9
283.9
283.9
283.5
284.0
284.0
285.5
N"""CNJ.
K.V{CN~
216
2845
284.3
282.8
283.9
2808
2811
281.9
283.9
281.9
Handbook of X-ray Photoelectron Spectroscopy
MVsn
MVS73, WaTa80
MVS73, Shlq78
MVS13
SAT073
VWIISSI
SAT073
Nefe82
SATD73
Tric74
NZB78
SNMK78
SNMK78
SNMK78
Tric74
Tric74
OYK74
HVV19
HVV19
EMGK74
EMGK74
EMGK74
HVV79
HVV19
NeSa78
.....,.
Wagn78
WaTaSO
Wagn73
Wagn78
•
JHBK73
RHJF69
SbTr75
RHlF69
RlUF69
RHlF69
SiLe78
RIIJF69
RHJF69,IKlM73
RHJF69
RHJF69, CoRa76
RmF69
Vann76
Vann76
Vano76
Vann76, ZeHa71
Vann76, ZelIa71
Vann76
Vann76
Vann76
Vann76
Cr(COJ.
281.9
Co(CO))NO
288.2
""CO,
Fc(COb(NOh
,,<0
288.2
MniCO)11
Ni(CO)4
"7>
288.2
(M~CO)IBth
287.6
288.0
288.'
289.4
289.6
289.3
289.8
289.'
29Q0
289,5
287.0
291.9
29>4
293.9
296.7
285.2
2841
2841
285.1
285.0
2845
284.'
BrMn(COh
A"co,
o.co,
CaCOl
CdCQl
LiiXl)
N.,co,
NaHCOl
S<CO,
05,
co,
co.
COF,
CF,
Cyclohexaoe
.""'"
"""'"II,
4!lsOh (c;.CH})
~HICH)
(C-·H)
Pe(CsHln
en""",
CHJC%OH
CHJCOO(.'4'H~h
CoF,
Inositol
H~illOJle
(C-HCOHh
(CHCtOHh
(CH)C%hO
HCHO
(CH)C-uOh
C!!,C'OCl1,
"'"
"".
"'"
2669
289.5
286.7
284.8
286.5
287.7
281.'
281.9
CFJCtQCth
28.,
C"FlCOCHl
292,6
288.3
289.3
288.2
28&.8
288.3
289.9
289.0
29Q.
2929
289.5
288.3
2921
288.9
281.4
(co.
rn,c'OOH
CHJC400Na
CH~a
CHlC'OOAg
HOOCCOOH
(COONah
Cf,C'OOO
C'F,CQ()EI
CI)C·COONa
CllCC'OONa
FJC"COONa
FJX:-QONa
p-Benzoquinone
m
\Jl
BCGHn, BC!l~1n,
K1WY76, PF073
BCGH72
BCGHn
BCGHn
VWVBn
BCGH72
VWVBn
VWVBn
HGW75
u.s""
CLSW83
HGW75
O5FG19
GHHL70. HHDDSI
GHHL70
CLSW83
GHHL70
GHHL70
GIIHL70
GHHL70
GHHL10
GHHL70
GHHL7O, LaFo76, CKAMn
CKM7I
CKM11
CKM11
BCDII73
KTWY7'
GHHL70
GHHL70
CKAMn
GHHL70
OYK74
GHHL70
GHHL70
GHHL70, ClTh78
GHHL70
GHHL70
GHHL70
GHHL70
GHHL70
GHIlL70
GIIHL70
HHDDSI
GHHL70
HHDD81
GHlIL70
GHHL70
GIIHL70
GIIHL70
GHIIL70
GIUlL70
GIlHL70
GHIIL70
OYK74
I)crkin-Elmcl' Corporation
Physical Electronics Division
Handbook or X-ray Photoelectron Spectroscopy
O(""h
CHCHtOCOCl
E1OC'oa
(PhOhCO
HC'(OCH,h
HCOONH.e
OC'(OCH,h
O(C'HJC(K)Hh
O(cn~'OOUh
CHJC'H~I
CBIB!"!
CHICb
HCF)
HCeh
C6111CI (C'Cl)
C6HJC1(C'U)
C6II,Br
C6HsF(C'F)
C6HsF(C'II)
c.Ha,
C6HFslC'H)
C.HFslC'f)
"'"
ChIUl'(l,
C1JiC'(R],
C'IIJCN
CH""N
CHJCONIIl
E>NH,
EtNli]BF,
PhNH,
ONHilia
(CHl~'
CsHsN
PhCN
C'HJCNBFl
CHlC'NBFl
TriaUJIe
NC'N:C(NH,n
NCN=C'(NHlh
HINCHJC'OONa
HlNCONHl
H2NCSN~h
H2NCQNHCONHl
PhNo,
I'hJ'
",po
I'hJ'B<
""',
~CH~)
~CH~)
~HOCOCH<CHu
~No<lCOCMo<:Hu
P(CtHJX.'OCIl=Old
p(CHJOC'OCH=CH1)
p(MeOCOCMe=CHv
286.0
287.'
290.,
290.1
289.1
2884
2911
ZtHa1l
GHHI.10
GHHL10
ClTh18
GHHL10
GHHL10
GHHL10
GHHL10
GHHL10
GHHL10
GHlIL10
GHHL10
GflllL10
GmU,10
CKM7l
CKM71
l..IFo16
CKM71
CKM71
CKAM15
CKAMn
"'"
289.5
"'281.1"
281.8
294.1
289.6
281.1
285.7
285.1
287.8
285.6
"'"'""
clWln
289.2
2881
291.7
GHIII.10
GHHL10
GIIIIL10
BOOH1]
BOOH1]
SNMK18
BOOH73, GIIHL70
8001173
UFo16
LtR.17
GIIHL70
BCGII13
Lar'076
BCGH13
BCGII73
GmlL70
LtRan
LtRa17
GHHL10
GHHL70, LeRa77
teRa77, Srwan
YYS78
LaFo16
"'-,
2B6J
2871
288.4
285.6
"'"
284.6
289.4
286.9
285.5
285.4
287.3
289.1
286.3
286.4
288.2
287.9
28&.1
2880
289.3
285.3
284.'
284.6
285.4
284.6
286J
286J
289.0
288'
286.4
288.6
289.0
Perkin-Elmer Corporation
Ph\'.~i{,:ll Ji:1P.f'.tmnir<;: Oivi.<;:inn
LMfOl
LMfOl
LMF80. LaFo16
BAlS76
PRcm
PRcm
HIIDDSI
HI/DDS!
ClTh18
ClTh18
HHDDSI
if'\.
W
Appendix B. Chemical Stales Tables
PVA ('(H£*HOH-)n
"''''"''
!'EO (<:H,coli,<>.
poly (<:H"",va..
CoH.lC'OOHh
II~(CH!)£*OOH
SociUIll Siearale
Mylar PoIytSltt C'-H
Mylar PoIytSlef C;--O
MylM Polyeslef ~
PoIycarnooate-OCtDtTellon {-CF£F:!-)n
(-C'FHCF!")n
(-CA-lC'F!")n
(-CHICFH.)n
(-C%CF!")
(-ClhC'Fr)n
(.C%CFH-)n
(-CHp'FH-)n
PVC (.('HICHCI-)
PVC (.(II£*IICI-)
Ca 2p
C.
e.co,
C.
C.
CallI
c.s
"'"
c.a,
C.~
28.,
286.2
"'"
281.4
288.'
288.9
28ll
284.85
2803
288.1
290.4
292.2
289.3
.291.6
288.4
286.3
290.8
285.9
2880
284.9
28.,
..
"6J
"
345.9
346.8
,,6.2
345.9
".,
"8J
347.8
PRcvn
COW81
COWSI
COW8!
COWSI
COWSI
COWSI
JFM
COW8l
COW8]
roW8l
CFK13
CFK13
CFK13
CFK73
CFK73
CFK73
CFK13
CFK"
PRcvn
PRcvn
$
$
V,VdIO
SMKM77
FMUK77
FMUK77
FMUKl1
W""TI
".,
Wagn17, NSLS71
lnYa81
FMUKl1
VaVeSO
Wagn77. CLSW83, WRDM19
CLSW83
ACHT73
NFS82
NFS82
CLSW83
Nefe82
WPHK82
V,V,",
V,V,",
c.~
2982
292J
291.9
291.9
289.1
Cd 3d512
Cd
Cd
405.1
405.0
C.O
C.O
C.O
CaCOl
Ca(NOln
CaCrO.
CaMoO.
CaRhA
C.so.
CaW(h
c.~;,o,
CaLMM
C.
c.o
e.co,
c.a,
C""".
346.1
341.3
346.9
348.1
346.3
341.2
345.7
348.0
3465
341.0
404.'
WRDM19. Wagn77
WopTl
WopTl
$
GaWi17, HSBSSI,WRDM19. Wagn15
HSBSSI
Appendix B. Chemical States Tables
BgUCdo.lTe
00,
CdS'
CdS
Cdb
CdBrt
CdCh
CdF,
CdO
CdC,
Cd(Ofib
CdCO,
CdRht04
CdMNN
Cd
404.6
404,9
405.3
"".3
Handbook of X·ray Photoelectron Spectroscopy
SBBSO
SBB80. GaWi77
GaWi77
G:4Wi77
"".,
""-0
SATDn
406.1
405.9
40\.2
'03.6
"".0
405,1
404.7
SATD73
GaWi77,SATD13, Wagnn
Gawm, NODS75, NFS82. SBB80
HGW15
WRDM79. HGW75
HOW75
NFS82
383.8
WRDM79, Wagn75,
GaWi77
GaWi77
GaWiTI
GaWiTI
GaWiTI
GaWi77
GaWi77
QaWin
K1Re(\
KlR~
KJSnt\
KlWa.
K"""
KlRhC16
~MOlCII
Na,PdC4
Co(NHl>.sllO.
P(NH,),CI,
Pl(NHl)cCb
Pt(NH)~C1l
Rh(NH)ACll
C"Sb,CI,
c.sbC1o
00,
CdS<
CdS
381'
381.4
381.1
381.0
378.8
3812
Cdb
CdF,
CdO
c<3d
'"'"
<>A"
"'I'd,
CoSo
""""',
"'0,
00,
C<H,
883.8
883.9
883.5
884.3
884.3
883.6
881.8
881'
88M
•
&0.82
WBCgo
ll'BCiO
Il'BC8O
I.FBCSO
WRDM79
NODS75. SaRalll
S<o.82
KlrCl,NO
'0
UCla.
KOo,
KOO.
uoo.
NaCIO.
Ni(NHJ>.(CI01h
Nielo. . 6Ht<)
RbCIo.
"'-NO
"'NO
I'I4NO
N14a
""""""'"
Panachlaobenzene
ORh(phJPh
(El)PlJPtHCI
(I'tIJPnPLHCl trans
(B,P),"""
CI2p
KCI
=
KO
N.a
Liel
RbCl
Cue!!
NO,
PdCl,
RbCJ,
RhCll'
""",
z,a,
12H~
"'' ' '
KlM0C!6
Kl0sC~
"'PdCh
kPlCk
"'PlCIo
198.5
196.l
198.2
198.'
198.5
197.9
2000
199.4
198.'
199.3
199.2
199.7
1985
198.6
[98.4
198.6
198.8
198.8
198.8
•
MVS73
MVS73,NSLS77, YYS78
MVS73,NSLSn, SGS07Q
MVS73,CSFG79
MVS73
VWHSSI
KJHe83, TRLI<73, YYS 78
NKBP73
01"'"
CMllL77
Ben 75
KIHo8l
NSBN71. LeBrn, CoHe72
CoHen
CoUe72. LeBr72
NKBP73
CMHL77, SNMK78
CoIle72.ltBr72, SNMK78
(El)P'hPtCh
(Ph)i'hNiCh
(f'hlPhNiCh
",PBCJ,
Ph,PO"'"
(NbjO'a)(.\(EtJi)J
(Nb6all)CI'~E4Nh
CdC"
OCJ,
HA
loCl
InCi)
T',"
UCb
ua.
00,
UDCI
UDO,
"o,
(N14'''''''
OPO,
19..
199J
198.4
199.0
198.7
198.'
198.8
199J
198.'
198.8
197.8
197.8
198.1
198.0
199.2
198.9
200.1
208.2
206.5
208.8
209.0
208.5
208.2
2Ol6
208.,
196.2
196.4
1%.1
191.9
200.1
200.0
198.0
198.0
191.1
199.2
198.1
199.0
198.3
199.4
198.'
199.4
197.5
199.0
199.2
198.7
19M
199.0
198.2
198.1
191.7
191.7
198.5
198.3
199.7
198.2
201.7
If'\,
21R
\lI
CoHen
LeBr72
CoHen
LeBrn
NS81m
SNMK78
HUGH79
SeTs76
Tnc74
CMHL77, Nefe78
SNMKn
SNMK78
Nefe78
BCH75. Tnc74
Tric74
NSBN77
Sher76
MVS73
MVS73
MVS73
MVS73
MVS73
NZB18
NZB78
MVS73
EMGK74
EMGK74
HVV79
EMGK74
CKAM75
CKAM75
Nefe78, Olm9, MMRC72
Rigg72
CBA13
LeBr12, Ncfe78, RiU72
Riggn
BNSA70, STIIU76
NZB78
HVV19
HVV19
BeW,79
BeWa79
SAID73
YYS78
SATD13
FH177
HIm
MRV83
TBVL82
TBYL82
TBVL82
TBYL82
TBVL82
SA1D73
K_
FlWe75
Perkin-Elmer Corporation
Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Koo,
Koo.
HOPl(RllPh
HOPl(FJ:fh
ChPl(PhlPh
P!ljPCuCh
PhIPCuCi)
C,lhO
c.ll~CCb
C(NHllJCJ
~CH,""HCI)
Co2p
ll)6j
"""
197.9
198.0
198.0
198.9
199.0
201.0
201.0
198.0
100.0
NZKn
NZKn
ALn
ALn
AL77
FSJL83
FSJL83
CKMll
LeRaTI
CrlN
Crl<
CrBl
n.,
Co
Co
nB3
ns.1
LANM81
WROM19
ThSh"
Co;l
nS.4
778.0
781.9
783.0
782.6
782.4
180,2
780.4
MElX13
MElX13
LimoSl
CSC72
Co~
·4HJO
COFl
COO
COO
eo,o.
eo,o.
780.2
Co,(>,
779.9
780.0
781.0
780.8
781.9
780.2
CoOOH
Co(OH),
CoAIA
CoAIA
CoO"'
.
COfei)1
n9.5
Cl)Sl
$
$
NBMO?)
csen
WRDM'79
Kim75. NGDS75,
NFS82, CBR76
NGDS15.0kHi76
GPIlG19
Mc:Co75
McCo75
McCo7S
otHi76
781.2
z.co,o.
784.0
780.•
OkHi76
C5JCo~
180.'
180.8
181.0
180.'
781.8
Cs~oBr.
c.""",
K,Co(CAn
K,Co(_
Co<CO),NO
K,Co(CN'
K,Co(CN'
Co{NHJlJC:h
Co(Nlh))OJ
Co(NHJl.C1J
Co(Nlh16Cb
Co(C}li5h
Co(C}Hili
780.7
181.2
7811
181.4
781.9
?8U
781.8
779,1
7S1.3
Perkin-Elmer Corporation
Physical Electronics Division
S76.l
578.3
580.3
C<O,
Cri',
C<o,
Cr(DHh
C<OCH
Cr(COl6
Cr(COl.
"',00.
",,c,,o,
C..oo,
C","",
K~lOI
LoOO,
<';,00.
NazC!O.
Na£rlOl
NaJCrO.
Na£rO.
N.oo,
ZoO""
B.ao,
c.c.o.
(Nl-4hCrl~.
BCGH1'
Ollii76
Vann76
NBM073
YNAB17
csen
NBMO?3
BCDH73
CIAd71
574.3
576.7
c.o,
NBM013
NBM013
576.9
514,3
514.3
576.1
575.3
5743
576.8
NBMon
HBMon
=
574.4
Cl)()l
Na£~
CoSO.
"'"'""
5161
LiCJ(h
CoMoO.
CoMoO.
CoRhzQ.
n9.7
780.0
780.9
782.8
"'"
Cn,
Cril>,
COO,
PCLH76
OkHi76
OkHi76
OkHi76
GPOO79
PCLH76
NFS82
Lim081
CoMni>.
Cr2p
PRCV77, WRDM79
780.'
CoO
COS
COr'1
CbCo(lbioureah
CKM71
CoO
m,
Br.<:o(EJ.Nh
c~n
C,
Cr?OJ
C,
C,
Co
eo,os..
Appendix B. Chemical States Tabl~
D{NH,;a,
K,D{CN'
<,of,
Cr{acacb
Cliacacb
C!JCr(ureal.
Cr{CsHsn
Cr(CSHlh
CnCSHIXC1H1)
C<{OJ"
C<{CJ<.'
CI(COhPHJ
m.'
579.8
S77J
517.0
576.3
517.0
579.8
519.5
516.4
577.1
579.9
515.&
519.8
517.0
519.8
580,5
579.4
518.5
577.9
517.1
517.2
579.1
578.9
519.5
"Ill
516.3
583.0
517.7
576.1
579.9
574.8
576.3
574.4
574,J
575.4
575.3
EMGK14
EMGK74
NBM073
•
<,<
LANM8!
WRDM79
RoRo16
STAB76
MElX13
=
=
=
=
BOFP8I, CDFM82, <:sen,
WRDM79. NGDS75
IIKK76
ACHTI)
CSC72
COFMS2
CDFM82
IlKK76
BeGHn, BCHMn
PfD13
A11'
A11'
ACHT73
CDFM82
NSSPOI
HoThlll
AClffi3
AClm3
ACHT73
LaKe76
ACHT73
LaKe76
LaKe76
LaKc76. ACHT73
BDFP81
ArJb76
ACHT73
A'M.
AITh1<i
Vaon16. ZeHa7l
AITu'16
AITh1<i
leHa?l
AITh76
BCOIl73, CDH 74. GSMJ74
ClAd?1
COll74, GSMJ74
CDH74
PF07l
BCGHn
""
Appendix 8. Chemical States Tables
C:l(CO)sNH)
D(co},c.Il.
C,CObc.H.
Cl(COJs(MeJI)j
CI~r(CsHs)
IC,c.H.l
CrLl\lM
C,
Cs JdSll
C.
C.
515j
515.1
576.3
575.2
576.1
516.4
BCGH72, B01M72
CDH74
PfD73
BCGH72, BCI-lM72
GSMJ74
CDH74
527.2
WROM'19
OCro.
726.4
726.0
723.9
724.0
723.1
724.0
m6
723.9
723.9
723.8
724.2
c.,c,,"
n45
DOH
m,
724.5
c.r
CsBr
ocr
ill
DN,
c.~o.
Cs;PO,
C>.p,o,
c.,e"o,
Hand~ok
""0
a.et
9313
VWIlS81
9325
CA.wm. Wtgn75
CuF)
"',0
934.4
935.2
934.8
935.6
93"
931.0
936.8
932.5
•
Gawm
WRDM79
VWllS81
YYS18
"'W077
WRDM19
VWHS81
CDFM82, GaWi77, Wagn75.
HMUZ18, MSSS81, Scho73b
M
933.7
MVS73
MVS73
MVS73
MVS73
SGRS72
Wag.17
MVS73
MVS73
MVS73
ACKT7l
ACHl73
WRDM79
"'tOH},
Cu(NOJh
CoCN
COC,
CuCh
OCt,
COC,
"'"
"'''
KDR77
c.qCNb
935.1
935.5
933.1
9312
c.co,
93"
c.so.
••
ColO"'},
Cll(OAch
Cu(acach
Cll(8-HydlOzyquiooJ.)
C. Salicylakllnime
934.'
935.5
934.9
931.6
934.1
934.6
932.3
933.8
932.6
934.1
934.4
931.8
935.0
934.5
935.0
934.0
LANM8I
"""'IE>JIb
'325
""0.
CuSiO)
ClIlMOJOII
c>",o,o,
<>coo.
a.ao,
CuFeIO~
CsMNN
c.~
DOH
Cu2p
C,
M
c>
a.
C,
C,
C,
a.
c>
c...""
CutsSns
a.,P
"""
c.s,
"""
CuAgSe
Culn$ez
Co~
c.s
c.s
C"'
COS
CoB,
220
568.4
'8'-'
932.7
9316
9316
9316
9316
932.6
932.7
932.7
9316
932.6
932.5
932.2
932.2
931.9
932.0
931.9
931.9
932.5
9312
9331
931.9
935.0
932.1
of X-ray Photoelectron Spectroscopy
Waf'17
WRDM79
AtMP82
BiSw80
BiSw80
BiSw80
PEl82
KPMl.73,
WRDM79, Wagn75
V,,;yn
llegd82
NSDU75
!iSDU7'
RRD78
RRD18
RRD78
KJI081
WllgII75
RRD18
Asam76,~Wm,
LimoSl
BSRR81
NSSPSO
BrFr74
CuFe0l
CuMo04
""""'"
CUJO(I'hNCONHCONHlbl 935.8
HMU'l18, Qawm.
WRDM79, MSSSSI
MSSS&1
NZK77
Wagn75
NZKn
WRDM79
CmoSI
NZK77
WRDM79
HMUZ18
HMl1l78
CDI'M82
AClm3
LDDB80
LDDB80
HMUZ18
NFS82
BrFr74
YY~
BrFr74
BrFr74
BuBu74
EMGK74
YYS7lI
Cu Ll\1M
a.
c>
a.
a.
Co
c..z..
"""
Cl&
CuAgSe
C,~
c.s
CuBrl
c.cr
a.et
ocr,
CuF I
Co',
918.6
918.1
918.6
9117
918.6
918.6
917.6
918.4
917.7
917.4
917.9
916.9
915.0
915.6
915.3
916.0
914.8
m
BiSw80
BiSwSO
BiSwSO
PEl82
KPMl.13, WRDM79, Wagn75,
Asam16,GaWin
_n
RROJ.
RROJ,
RRD78
Wagn75
RRD78
VWHS81
Wap75
GaWi77
WRDM79, VWHS81, GaWi77
GaWi77
WRDM79
Perkin-Elmer Corporation
\ j / Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
C,F,
c,,o
c"o
c"o
c"o
00
Cu(OHh
c.(NQ,),
OCN
c.qCNh
c.co,
c.so.
"";0,
CU1MOJO.
CuJMOJO,
e,e"o.
""'''''
914,4
916,2
916.2
916.6
917.2
918.1
916.2
9153
914j
914j
916.3
915.6
9152
916.5
91 ..
91 ..
916.6
Dy4d
Dy
""'"
""'"
152.4
167.7
Dy JdYl
Dy
1295j
1298.9
E,4d
""
""',
167.3
169.4
168.7
VWHS81
CDFM82. HMUZ78
CDFM82. GaWi71. Wagn75,
HMUZ78. MSSS8 [. SclJ:l73b
MSSSBI, Wagn75
GaWin
GaWi77, MSSS81. Scbo73b
MSSSSI
Cd~
Cd~
NZKn
CdI',
Wagn75
c,~
NZKn
WRI>M79
NZKn
c,~
WRDM79
HMl1l78
HMl1l78
CDFM82
HMl1l18
.
.
s.....
SaRaSO
.
WRDM79
WRDM79
Eu 3dYl
'"
1125.6
E,
128.2
135.9
KF
KF
LiF
LiF
N,F
N,F
N,F
'bF
RbF
,,~
'oF,
c.F,
D~
S,~
AiF
,,~
684.9
685.9
683.9
6$4.4
685.1
685.0
684.5
684.5
683.7
683.6
682'
683.7
6843
684.
684.
Perkin-Elmer Corporation
Physical Electronics Division
.
WRDM79
NBK74. MVS73
PMDS77
WRD~179
MVS73, NBK74
WRDM19
NBK74. NSLS71
MVS73
MVS73
NBK74
WRDM79
NBK74
WRDM79
NBK74. NSLS71
Wagn80
NBK74
WRDM79
NBK74
GaWi77
NBK74, NKBP73
GaWin, WRDM79
NBK74, SATD73
NSI.S77
Ga Win. WRDM79
VWIIS8I
H8~
686:.
SAID73
684.8
685.0
'684.7
6816
684.6
685.1
WRDM1'J
GaWi77, WRDM79
NSI.S77
WRDM79
GaWin, Wagn77
NBK74
NBK74, NKBP73
NBK74, NKBrn
Mol'"
WRDM79
NBK74. NKBP73
WRDM79
WRDM79
WRDM79
WRDM79
WRDM79
TOVL81
TBVL82, PMDS77
TOVL82
WRDM79
WRDM79
NKBP73
NKBP73
NKBP73
WRDM79
RNS73
WRDM79
Wagnn
NSLS77
NBK74
WRDM79
NBK74
Wagnn
WRDM79
Pb~
z.~
z.~
AIF) ·3Hz{)
""'·lH,o
00,
1,1\
lnf)' 3Hz{)
1.01\
N<IF,
"""
SmF,
YF,
UF,
UF,
UF,
ThF,
. HfF4
NaBeF)
NNBF68
NNBF68
685'
685.7
685.0
684'
6817
685'
684.'
684.8
684.2
684.
685.9
M"',
NiF:!
NiFz ·4Hz{)
NalBeF~
FIs
UF
CoF
MgF,
MiF,
S<f,
uF,
Eu 4d
Eu10j
Appendix B. Chemical States Tables
NaBr~
NF~BF.
NaJAIF,
NaJ5iFj
NaJSiFj
KJSi~
KlliF,
K1liF,
NalTiF,
KJFeF,
K1NiF,
"""F.
N""'~
K,Z<F,
N"",.
KZfFs' Hz{)
K,z,~
N""I\
~FI'HP
OO>F,
686J
68>1
684.8
68>1
68'3
684'
6848
684>
684.6
685.3
685.3
684.'
684.'
684.9
685.4
685.1
685.7
685.2
687.0
694.2
685.5
686.0
686,4
68..
685.0
684.9
685.3
684.'
687.6
685.2
685.9
684.6
685.0
684.8
6843
6853
685.1
683.6
TRLK73
NBK74
WRDM19
NBK74, NKBP73
WRDM79
NKBP73
NKBP73
WRDM79
NBK74
BeH75
22\
Appendix B. Chemical Slates Tables
K2SbFl
KSbF.
KSblFJ
NazSbF;
NaSbF.
K)RhF,
KlNbFl
K2NbFl
K2TaF1
K2TaF1
NaTaI'.
Na2TaF7
NaJTaFI
K2UF6
EuOF
"OF
NdDF
PrOF
YOF
Cs2Mo(hF.
Cs2WOIF.
U01F2
p-(CF1=CFV
NiOOCCF)
CHlCNBF)
NHlBF)
Clli;NBFJ
EtNH2BF)
E!4NSbF.
Phy>BFl
Ph,POBFJ
Handbook of X-ray Photoelectron Spectroscopy
683.9
686.6
684.3
683.4
685.l
685.7
685.4
685.2
685.2
685.1
685.2
685.6
685.5
684.7
685.3
685.2
685.1
685.0
685.5
684.7
684.7
685.6
689.0
688.4
687.0
686.6
685.6
686.6
684.7
685.7
685.8
Trie74
Wagn77
Trie74
Trie74
BCH75
Ncfe78
WRDM79
NBK74
WRDM79
NBK74
NKBI'73
NKBP73
NKBP73
PMDS77
RGBH80
RGBH80
RGBli80
RGBli80
RGBli80
NKBP73
NKBP73
TBVL82
Wagn77
WRDM79
BCGm3
BCGH73
BCGli73
BCGlm
BCH 75
HVV79
HVV79
653.8
654.7
655.0
656.2
655.4
6S4.4
656.3
659.3
656.0
657.0
656.2
656.2
655.5
658.5
655.6
656.4
658.0
657.0
657.2
657.0
655.8
657.0
655.3
WRDM79
WRDM79
Wagn77
WRDM79
WRDM79
Wagn77
WRDM79
GaWi77
GaWi77, WRDM79
GaWi77
WRDM79
WRDM79
GaWi77, WRDM79
WRDM79
GnWi77, WRDM79
WRDM79
WRDM79
WRDM79
WRDM79
WRDM79
WRDM79
WRDM79
WRDM79
FKLL
C,F
LiF
N,F
B,~
C.~
MgFI
SrFl
AgF
OJF,
C"~
C"~
C"~
NiF)
Pb~
,,~
InF)
"F,
NdF)
PrFJ
SinFl
YF,
ThF.
HIF,
222
NaBF.
Nay'llF,
NazSiF.
Kl1iF.
NaJ1iF.
K)FcFb
NailcF,
Na2ZrF,
NaSnF)
KSbF.
KINbFJ
K1TaF1
p-(CF1=Ch)
NiOOCCFJ
Fc2p
F,
FeID)
F,
F,
F,
FeJAI
FClSi
Ft1B
F'B
FeJC
FoS
FoS
Fesl (markasite, pyr)
KFe.'h
FeBrl
FcRr)
FeCh
FeCI,
FeFI
FcF)
F<O
FeJO.
Fe)O.
Fe20)
Fe20), alpha
Fe20), gamma
FCOOH, alpha
FeOOH, gamma
CeFtjO.
Fe(C:(hlJ 61bO
FeSO.
K)FeF6
NiFeil.
Kj Fe(CNl6
K.Fe(CN),;
K.Fc(CNl6
Na2Fe(CN))(NO)
Na)re(CN)~N20)
Na.Fe(CNHNOJl
Na)Fc(CN)14HJ
652.8
654.1
653.0
655.7
655.1
656.0
654.0
655.1
655.3
656.6
655.2
655.0
652.4
652.9
WRDM79
WRDM79
Wagn77
WRDM79
Wagn77
WRDM79
WRD.\179
WRDM79
WRDM79
Wagn77
WRDM79
WRDM79
Wagn77
WRDM79
707.0
710.9
706.7
706.8
707.0
707.6
707.5
706.9
707.1
708.1
710.3
712.2
706.7
708.7
710.3
710.1
710.6
711.3
711.3
714.2
709.4
708.2
710.4
710.8
7l0,9
710.9
711.8
711.3
710.5
713.6
712.1
714.4
710.5
709.6
7fJ7.1
708.5
709.7
707.4
706.8
707.6
$
"
LANM81
Asam76
WRDM79, MeZe77
ShTr75
ShTr75
MECC73
MECC73
ShTr75
cscn
Bind73, LimeSI
Sind73
Bind73
CSC72
CSC72
CSC72
CSC72
CSC72
CSC72
MeZe77
MeZe77
OkHi76
WRDM79, NGDS75
MeZen
MeZe77
MeZe77
KoNa80
MeZe77
Kilk73
Lime8l
CSC72
MeZe77
Vann76
Vann76
YNNA77
YNNA77
YNNA77
YNNA77
YNNA77
Perkin-Elmer Corporation
(J) Physical
Electronics Division
Handbook of X-relY Photoelectron Spectroscopy
Na~CN~11i4
F«COl>
F«COh(NOh
KFee(NOh~h
.2HzO
Fe(SMe)(COh
R<W1sn
lJPe(CI~ls)l
Fc(CsHACOOHh
Fc(phlhaloeyanine)
FeLMM
F<
Ga 2pYl
0.
G.
G.'
Gop,
G.,o,
1m}
109.6
'095
BCGH12
BCGlm
709.9
708.4
109.1
Neft78
BBFRn
FWUM79, BCDH73,
CDH74, Nefe18
CDH74
FWUM79
MSV79
'0&,
'707.1
0&'
'02'
1116.7
1116.5
1116.8
1116.9
1117.8
YNNAn
WRDM19
•
Scho73a
NSDU75
BDFPSI
ScooBa
GaLMM
G.
GoA,
GoA,
G.'
G.,
GoN
o.,so,
o.,so,
0.,0,
MO,
Gop,
G,Jd
G.
1068.2
I,,"]
1067.1
1065.6
106l>ll
111645
1ll6i2
106i'
1061.6
1062.4
1062.9
18.6
GaSb
GaAs
20.2
GoA,
G.'
G.'
o.P
o.P
19.2
o.N
AIOW
o..so,
Ga~)
GaPI
GaP)
GaJO)
GaJO)
las
las
19j
I"
I"
195
19.0
19.1
19.9
19.6
20.2
20.5
21.0
Gd 4d
Gd
140.4
Perkin-Elmer Corporation
Physical Electronics Division
WRDM79. MINN18, Scho73a
MINN78
MINN78
M1NN78, MIN81
MINai
"'11182
11182
MINN18
11182
Sehona
MINN78, LBHK73,
Scho13a. WRDM19
LBHK73
lPMK14
IMNN79, MlNN78, Tayl82,
MINHI
NIMN18, IMNN79
LBHK13, MlN81
LPMK74
Appendix B. Chemical States Tables
Gd,(),
Gd 3d
Gd
Gd,O,
Ge 2pyz
Go
G<
G<S,
G<S,
"""
ad,
G<F,
G<Q,
">G<Q,
"'''''~
K!ieF,
""'"
GeLMM
G<
G<
G<
G<To
Go&
GoS
G<Q,
N""""
G<Jd
G<
G<
G<
G<
GoA"
GeTejAsl
GcSlTeAsl
GoS,A,
G<T~
G<T,
G<T,
Go&,
Go&
He~U80
G<S,
Toy'"
GoS
GoS
11182
11182
GGVL19
lBHK73, Schema
11182
MINN18
•
1418
G<Q,
""'"
PbJC;el
PhIGeBr
Ph.JGeCI
1187.0
1189.0
1217.2
1217.4
121~.8
1219.8
1218.8
121&.2
.1220.1
1220..
121&.9
1221.3
1220.7
1218.9
1146.2
1145.4
1145.1
1144.8
11418
11417
1137.7
I13i1
29.4
29.3
29.0
29.1
29.7
29.9
30.2
J<l.'
30.1
30.0
29.7
3\.0
Jo.9
30..
J<lj
29.5
J15
31.2
31.8
31.8
31.8
1If4f
Hf
14.3
,,"'"
•
SaRaSO
McWe76
TI.R78, MoYa13, Wagn75
MoYa73
MoYa73
n.R78
MoYa13
MoYa13
MoYa1), Wqn75
MoYa7)
Wagn75
MoYan
MoYa1)
McWe16
SFS77
Wagn15, WRDM79
SFSn
SFSn
SFSn
Wap75
W>p71
•
McWe16
SFSn
HKMP74, UeOd82, WRDM79
HKMP74
IlKMP74
HKMP74
HKMP74
HKMP74
SFSn
HKMP7-4
lJoOd82
SFSn
HKMP74
SFSn
HKMP74
HKMP74
HWVV74
HWVV74
HWVV74
HWVV74
•
Appendix B. Chemical States Tahles
Handbook of X.ray Photoelectron Spectroscopy
'.
IIf
1I1D,
14.4
16.7
Uf4d
1I1D,
213.2
WRDM19
bN",Ph,p),
SaRa80
hPt(EtJP)1
41njPr.N)
SaRallO, NGDS75
llPl(MeJPh cis
hP(MeJ'h trall
4(MoJ''>
Hg4f
HgS (cillllabar)
II,
Hr,..CduTe
1Ol.0
99.'
II,S
'00.2
100.8
II~,
100.7
HgBr!
IIgCI,
101.0
1IgF,
Hg(lhiodibenzoylll¥h
101.2
100.8
101.3
101.3
101.3
(l'bJ'hllg{SCN'
101.4
llgO
EIINCJ4HgOAc
CIzHg(H~HroNHV!
101.4
•
&Men, SATD73,
5MBM76, WRDM79
SBSSO
NSSPSO
SATD73
SATD73
SAID13
SAT073
NSSPSO
NSSP80
YYS78
TBHH77
R>U82
Li'
A"
Cdi
X,
"""
'"N_
K1
Li'
I.iI
A~
Cd!
Cdi
C.,
II~,
,,'
~"
Nih
Nih·6H{)
lob
Zob
NalO!
Nal0~
1110,
H"'"
',0,
'0
·le!)
es,shrJg
"""",
Na(NilO6) . H10
224
619.3
619.9
618.2
618.2
618.8
618.6
619.7
61&.9
619.4
619.2
619.4
619,0
619.4
619.0
619.1
619.0
619.7
619.8
619.7
623.5
624.0
623.1
6210
,23.3
621.5
622.5
618.5
,"'.
624.4
•
""'''
MVS73
501.3
506.0
In Jdsn
'0
'0
4418
Ill9sSnl
443.6
[nSb
444.1
444.6
"".5
~,s,
~"
'0'
"".8
4460
443.9
InCh
445.1
446.0
446.9
MVS13
r.WiI1
~C1
'I«"
Shcr76
SIler76
S1«16
......
.....,
~C1,
GaWi77
NZB18
GaWin
SATD1J
443.9
~'"
WRDM79
FIm1
FIm1
Gawm
GaWi77
Nih
!nBf)
InSr
SAT073
Ga\\'i77
SATD73
501.0
lob
MVS73
MVS73
MVS73, Sher76
Gawm
'''
InJOJ
lnJOJ
In~l
In(OHh
(Nl-4.hinF.
CulnSez
In(acach
BfllnEwN
OllnE4N
Br.lnPr.N
4lnPr.N
C4InPr.N
.....0
......
......
444.3
444.6
444.9
445.0
445.6
"".7
445.4
445.7
445.2
445.9
445.4
445.8
G>WiI1
G>WiI1
•
Bert81.liegd82, WRDM79,
PVVA19, LAKn
""'"
IMNN79
Bert8!. CFRS80
WRDM19
WRllM19
WJgo n, MSC 73
Wagnn. MSC 73
Am1
.....n
MSC13
FIm1
Wagn77
MSC73
MSC13
~75,MSC73
Wagn77, NGDS75. Bert81
CFRS80
LAK77. MSC73
WRDM19
....on
KJID81
MSC13
Arm
FIm1
FIm1
Arm
FHm
InMNN
Sher76
BCH75
Tric74
'0'
410.4
410.5
401.6
408.0
411.0
NZB18
linTel
408.'
""'''
SI«"
BcWa79
BeWa79
WRDM79
G>WiI1
SOH
,"""
l3dsn
CAB?I
CAB11
517.0
50,,"
C,'
In)Tt]
159.6
NZB"
Riggn
FHT71
IMNN
'0'
Ho4d
110
l'.(M06I!)
6193
619.2
619.6
621.1
621.9
620.'
619.3
"In,sSn,
lnSh
~,
m
W
WRDM79
PVVA19. KISCSO, LAKn
lMNN79
Den8l
K1SCSO
WRDM79
Perkin-Elmer Corporation
Physical Electronics Division
Handbook of X-ray Pbotoelectron Spectroscopy
''""""",
Inh
InBl)
'''''
"'~
1,,0,
In(OHJ]
(N1~)llnP.
408.3
WROM79
4073
w""n
"",n
w""n
"",n
.....,
....
405.'
.737
""'71
"",n
." ..
....,
405.0
WRDM79
Wago77
Appendix B. Chemical States Tables
K!I'ICIi
K,"""
K1RtO.
K"""
K2Wa.
29),]
K31~
293.0
"'''''''''
2912
i.cllm
NSBN77
HUGH79
KSbfF,
293.7
KUFFJ' Hi>
"'-7
"".n
KIUF,
K2Zrl<,
K,Zrri
K,Co(CN\;
K,Cr<CN16
63.0
WRDM79. BUliK7D, EPC75
Folk?3
Nerc78KllrBr~ 1.8Nefe78
CoHe72, LeBr72
63.6
62.5
KSPB76, NSBN71
NSBN77
KJMn(CN>.
K.Ft(CN16
EPCl5
EPCl5
KJrCI~O
KIrCisNO
63.1
63.0
63.4
65.0
"'CO,a.
'27
&Q,(Bd'h
63.0
63.6
KSPB16
KSPB76
LeBrn
lrONaPhMl:
60.7
""'73
"liH,)<CH,cH,N!hh
I<O,(H,NOl,QI,NH",
&Q,(H,NCH,cH,NH",
63.1
NcBan
NeBa12
Nefe78
IrCl,
K2[rBr6
K,lrClr,
KllrCli;
KJlrC"
(N~hlrC\
(NH.o)JItC!6
l>(COhCl
Kllrt<CO}.(\
60.9
60.8
62.7
62.6
KSPB76
NSBN77
631
63.2
K
KO
K
Ki
KB,
KCl
KF
KF
KF
KCN
KN,
KNo,
Kao,
Kao.
KJPO.
""A
K,oo.
K,o,o,
K,o,o,
K,MoO.
KR>O,
KAb(A1Si,oIOMOHh
KllrC\j
K,MoClo
K,a.a.
Kl Ft(CNl6
!<..V(CNl6
K1Pl(CN).·3Hi)
K1Pl(CN).0:!· 3H~
K.JC(SCH:oCHNH1COO»)
K U\1M
KB'
KF
KSbF.
K'3d
Kr in graplite
K2p
294..
2929
$
$
294.6
292.8
SMKM17, PeKa77
MVS73
MYS73, WRDM79
MVS73, NSLS77
2910
292,8
292.5
Wagn75
292.8
2911
PMDS77
MV$73
Vann76
294.7
292.5
292.9
293.2
SGRS72
293.4
NSLSn
MVS73
MVS73
293j
"'-2
MVS1J
MVS1J
"'-I
ACHTJJ
Aom3
"'-,
"'-8
NSSPOO
NfS82
NfS82
WPHK82
NSBN77. LeBr72,CoHen
illle12
"'"'-5-,
293.0
292.8
2927
293.0
J)erkin-Elmcr Corporation
Physical Electronics Division
CoHen, LeBr72
(J)
1.<Bm
CoHen
$
U
I,
293.7
CoHen. LeBrn
",,",n
"'-,
KtNiF,
Ir 4£
"'-,
"'-,
La 3d
La
La
Lalh
LaIO)
La,o,
Lll4d
La
La,O,
LaOO,
294.2
293.1
292.6
292.8
293.7
~92.2
NKBP73
TRLK13
PMDS77
NKBP73
NKBP73
Vann76
ZcHa71
Vann76
291.9
291.9
291.9
293.7
293.1
293.3
292.9
292..
SSEW79
"".7
"".1
249.3
"",n
w..,n
Vann76
Vann76
Vann76
NSBN71
001.<73
001.<73
WRDM79
87.0
835.8
835.9
838.8
835.1
8317
SCSC82
ScSc82
WRDM79
SaRaSO
103.9
IOU
NISTI, KEML74
SaRaBO, NGDS?S, HoThllO
1OJ.1
~loThro
$
Lib
LiF
Li
LiN,
UBr
CO
CF
Li~
LiOIl
Li~l
LhPO.
55.6
".7
55.2
56.8
56.0
55.7
55.'
".9
55.2
55.4
$
KLMm, CSffi79
SGRsn
MVS1J
CSFG79, MVS13
MVS73. WRDM19
CSFG79
CSFG79
CSFG79
MVS73
Appendix B. Chemical Stales Tables
LiJ'>o,
55.6
u,oo.
571
57.1
l.iao.
u~
LiNbOJ
55.6
54.'
Lu 4f
'"
Lu4d
7J
L"
196.2
196.0
Lu~)
Mg2p
''""
".
49.6
Handbook of X-ray Photoelectron Spectroscopy
MVS73
MVS73
MnF)
ACHT13
ACHT73
5111079
•
HAS1S. LMKn5, HfV 71,
FuggT1, WRDM79
49.8
fWFA15
M&lBh
"tf,
50.6
FWFA75
WagnfK)
"to
50.8
Mg(OHh
"tAlA
Tak, M&JSilOIO(OHh
"j
50.4
505
MnzO~alpha
641.7
MnOJ:. bela
"',j
"'641.1
Mn02
MnOOH
6423
641.7
"""
CoMnzO..
CuMnA
•
IIYaSl
HNUW7i>
HNUW7Sb
WPtlK82
"""""
MnSo.
KMnOl
Mnz(CO}lo
B"'~CO'
(BrMn(COJ.ih
BrMn(COMPh}i'j
BrMn(COb(P(OMebh
Mn~COMPhJPh
K)Mn(CN16
N~Mn(CN16
Mg Is
",,00
1303.1
13010
Mz,BiJ,
MgF1
Mg(Ollh
MgAhO.
1304.0
13OS.0
1302.7
1304.0
'"
HAS7S. LMK175, FuUT1
FWFA1S
FWFA1S
Wagn80
HNUW78a
HNUW78b
Mn(C,H,h
"~COh(e,""
MIl(CO)iCs~
'"
1185.5
IMKJ7S,SRHH'1S. WRDM79,
Fuggn.HFVTI
M&2Cu
Mg,Bil
1185.7
11&4.6
1178.2
11803
~WFA1S
Mn2p
".MnOJ
".
"'21
Mo
638.8
639.0
"oN
"'"
"'13
MnS. beu
MnS. alpha
"'.,
"oS
"oa,
"'21
641.9
"'20
"'20
MnF1
642.6
MnB~
226
"',j
"".
....,
640.6
647.0
641.6
641.9
641.7
""j
"".
6<07
639.7
6383
638..5
.."
6<0.
FWFA1S
WagnSO
WPHK~
639.0
6<03
641.9
••
LANM81
WRDM79
<:sen
<:sen
Aoki76
Aoki76
LimoSl
Aoki76.
Aoki76, cscn
Aoki76.
Aoki76,
cscn
cscn
cscn
eSC12
OHm
otHi76
Aoki16, CSC72
011175
CSC72
otHi76
otHi16
00115
WRDM79
OHm
Aoki76,
cscn, NODS7S
OH175
otHi76
OtHi76
otHi76
Limolll
UmRe78
VWVBn
VWVBTI
VWVBn
VWVBTI
VWVBn
vwvnn
Vann76
Vann76
BCDH73, COH?4
ffiH74
""<!II
MnLMM
".
",
",
",
MoB!
MOlBs
"o,C
·MnIJ
..
641.4
617.6
VayrSl
m.O
•
MoJd
MgKLL
MgFI
Talc, M&lSi.OrO(OHh
6<07
Mn~)
MuzO). alpha
"oA
KEML74, LPWF1S
SaRa~O, NODS7S
"',.
MQj
641.4
641.2
641.6
MnzOJogamma
M~Cu
51.0
",o
",o
",o
m.,
228.0
227.9
2273
227.8
MoSil
227.7
"oS<,
22<3
MoS1
229.0
229.6
"oCh
230.0
230..
"oCh
"oe,
231.0
229.3
"00,
2316
"oS,
MoCk
",o,
{NH)QMoO.
AIJ(MoO.b
Ah{MoOilJ
232'
2321
232.5
233.3
NyMa80
CiDe75, WRDM79. CGR 78,
GrMa75, KBAW74, WaTaSO
"ECC73
"'BrWh78
Wh"
WPHK82
GrMa75
PCLH76, GrMn75
SSOTSI.SIEd7S
GrMa7S
OrMa7S
GrMa75,SwHe71
SaRaSO, CGR18,
CiDe75, KBAW74
G1'0079, KBAW74. SaRaSO.
ODe7S, CGR78, GrMa7S
WRDM79
SwHe71
PCLH76
NFS82
Perkin-Elmer Corporation
Physical E1cclronics Division
Handbook of X-ray Photoelectron Spectroscopy
CaMo<>.
CoMo04
CrMo04
CUMo04
K1MoO.
NajMoUt
NalMoUt ·2Hi)
(NH.)lMOlOJ
(NIl4hMo~' 4Hi)
CUjMoJOlo
CuJM0109
RhlMoO o
ChMo(NOh
!<4M{}JClg
r..(MQ61s)
Br4(Moollr!l
CI4Mo(PhlPh
C~Moi&,pj4
ChMo(PhPMew mer
C~MOJ(PhPMC1l4
(COhMo(PhlPj
(CO).J.1o(PhJPh
(CO)sMO(PhlPll
ChMo(COh{PhJPh
ChMo(COlJ{PhJPh
CllMo(NOh(PhlPh
ChMo(NO)j(MeCNh
ChMo(pyridylh
C4MOl(pyridyl14
Ci4Mo(pyridylh
Br4(MOr,Brs)(pyridylh
ChJM06(Pyridyl)
C4Molbipyridyl)
ChMoO(bipyridylj
ChMoOz(bipyridyl)
(CO)4Mo(bipyridyl)
Cll1M06(PhlPh
C4(MOr,Brl)(E4N)l
Br6lMCl6Brl}(E4Nh
(B UlNhMo(COl4
(BI4N}.>MOiIIi
(BI4NjJMOlCI,
(CIH.llMo(COh
MoOiacach
232.8
232.4
232.2
232.7
232.1
232.1
232.5
232.5
232.7
232.4
232.8
231.8
230.4
229,2
228.8
229.3
231.9
228.7
229,4
228.7
228.3
227.8
227.4
229.3
228,8
230.3
23l.5
22905
228,9
230.8
229.7
229,6
232.0
231.9
232.3
226.3
229.6
229.2
229.3
227.4
229.0
229.5
227,4
232,0
N Is
BN
NH,
NH,
Cr1N
C,"
G.N
GcJN~
SoN
TiN
398.1
399,6
398.7
3974
396,7
397.0
397.4
396.2
396.9
Perkin-Elmer Corporation
Physical Electronics Division
NFS82
GPDG79, CiDc75, AMA...74
TVG76
HMUZ78
NFS82
CiDe75, NFS82, SwHe71,
NSLS77
GrMa75
AMA...74
GrMa75
HMUZ78
HMUZ78
NFS82
Nefe78
HUGH79
BeWa79
BcWa79
HuBa74
Walt77
LeBrn
Walt77
HVV79
HuBa74
HuBa74
Nefc78
HuBa74
HuBa14
Nefe78
CEt.C76
Walt77
SwHe71
BeWa79
HaWa74
CELC76
CELC76
CELC76
GrMa75
HaWa74
BeWa79
BeWa79
GrMa75
BeWa79
Walm
GrMa75
GrMa75
•
HHJ69
LaLu79, RNS73
RoRo76
STAB76
HcMa80
TLR18
STAB?6
STAB76
Appendix B. Chemical States Tables
VN
ON
SiJN~
SlN 1
SP{NHlh
S~N3CI
(NPCh)J
CS(N*NN*)
Cs(NN*N)
K(N*NN*)
K(NN*N)
Li(N*NN*)
Li(NN*Nj
Na(N*NN*)
Na(N*NN*)
Na(NN'Nj
Na(NN'N)
Rb(N*NN'j
Rb(NN*N)
K3Co(CNl6
K3Cr(CNl6
KJFe(CNl6
KlMn(CNl6
!<4Fe(CNl6
!<4Fe(CNl6
!<4Y{CNl6
N34Mn(CNl6
NaJf"c(CN)j(N*Oj
NaJf"e(CN*h(NO)
397.4
398.1
397.4
398.9
398.8
400.4
400.3
397.9
402.2
398,S
402,8
398.7
403.1
39805
400.1
402.9
404.5
398.1
402.4
3!>9.6
397.6
398.1
398.3
398.0
397.8
39805
JIn.6
402.7
m,4
N34Fe(CN~*Ol
404.3
N34Fc(CN*hNOl
396.6
399.8
398.3
400.6
400.2
400.3
40lJ
401.9
402.3
403.1
403.3
401.7
402.9
401.4
402.6
402.1
3993
399.1
397.9
417.1
404.9
403.9
4075
408.0
407.2
407.3
KCN
KCN
KCN
NaCN
(NH.)lPlC4
(NH.hSOl
N*H~NO)
N*H~Ol
N*H~Ol
N1H~O.
N1H~o.
NHlOI1Cl, ionic
NHlOHC1, ionic
NHlSO J
NaN1Ch
KSCN
KOCN
KOCN
NF4BF4
NaNOJ,
NaNOJ,
Ba(NOlh
Ca(NOlh
KNO,
NH.N'Ol
STAB76
WRDM79, HJGN70
TLR78
SOI077
F1We75
HHJ69
HHJ69
SGRS72
SGRS72
SGRS72
SGRS72
SGRS72
SGRS72
SGRSn
HHJ69
SGRS72
HHJ69
SGRS72
SGRS72
Vann76
Vann76, ZtHa71
Yann76
Yann76
Yann76
YNNA77
Yann76
Yann76
YNNA77
YNNA77
YNNA77
YNNA77
HHJOO
YNNA74
Yann76
Yann76
KaEI79
SwAI74
SwA174, BCM78
BTE7)
HHJ69
HHJ69
Folk73
HHJ69
Folk73
HHJ69
HHJ69
HHJ69
HHJ69
Folk?3
RNS73
HHJ69, uHc75
BTE77
CLSW83
CLSW83
NSLS77
BTE77
','.7
Appendix B. Chemical States Tables
Ni'LN"OJ
NHIN*OJ
NaNOl
NaNOl
Ni(NOln
Ni(NOJh'6H~
I'b(NChh
Sr(NOln
KII~(NOJ.
K2Pl(NOzlt,
K,co(NO,Jo
K,Rh(NO,Jo
K,RhlNQ,),
MoC!J(NOh
K1Os(NO}Cls
K1Ru(NOlh
K~u(NO)Br}
IU1](NO)J.'h
Co(COhNO
Fc(COh(NOh
Co(NHI)!Ol
Ni(NH~l"1:
Ni(NH~c:IO.n
Pt(NtHJh(NOth
Pt(NHln(NtChh
Pt(NHlhCh
Rh(NtU~J
M~Br
",.Na
"oNa
EIiNCI
ElJNHCI
Et!NHHSOt
B,,,.
BlNHJH50.
Bl4NHS~
EINHl
EiNH)BF)
NH.O
N140
NHJllF.l
C,H,N
CjHsN
CvisNHO
CsHsNBF.l
Hwmelhy\epdelJal'llll
PhCN
C(NHlhO
PhNHl
",,NO
OI'(NM""
P\NM<,),
Cysteine HCI Hyoolte
Cyslcine
lhN(CHuJCOOIl ionic
HN(CH~h ioric
1.111:
<nao
405.8
408,1
407.'
401.0
.".
407.1
<nal
404.7
404.7
404.2
404.1
407.3
401.4
4<)'8
4<)2.5
403.30
4OI.SO
""10
401.80
""'0
399.60
399.90
""4<)
404.4<)
400,20
400.10
401.40
4<)150
""30
401.40
401.20
401.80
3..90
401.00
401.10
39&.90
401.40
400.80
4<)150
401.90
398.80
399.30
401.00
401.40
399,40
399.20
400.10
399.40
403.00
399.10
3..30
401.20
400,00
400.80
"'70
Handbook or X.ray Pholoeledron Spectroscopy
HIU69
BCM78
HHJ69, uHe7S
BTE77
TRU73
""'78
11.R18
a.5\Y33
SNMK78
SNMK78
NBM073
SNMK7S
SHMK78
Nefe78
Nefe7S
Nefe78
Nefe78
Hefe7S
BCmln
BCOIl72
YNAB77
""'18
"'" 18
Hefe78, CMHLT1
Nefe78, CMHLT1
Nefe7&, CMHL77
Hefe7S
SGCT7'
EM.GJC74
Wle7S
EMGK74
LiHe7S
EyRe81
LiHe7S
EyRe81
EvRe81
BCGH73
BCGH73
SwAf14
EMGK74,mn
Ooon73
LiHe75
BCGH73
HHJ 69
BCGII73
LiHe7S
lille7S
teRa77
ulle75
LiHe75
AWe75
GBMP79
SSEW79
UMa79
YoSa74
YoSa7.
NtO"COOHh
H2NCHlCOOH
HJNClitCOQ ionic
EtCHNH 2COOH
HIN(Oh)JCOOH
CUJCHNthCOQH
IhNCo.~1l1
H1NCSNHt
H1NCSNHl
CthCONlh
PhCONHI
PhN::NPh
PhN==NPh
PhCH==NPh
1,1··azonaphthalcne
NCN=C(NtHili
AmONO
PhC==NOHC==NOHPII
MeC=NOHC::NOHMe
Ni(di methylglyoximeh
Cu Salicylaldoxime
Cu(8·hydroxyquinolh
8-QuinolillOl
Cl(CObNfh
N(EtO)JSiCl
N(EtO)JSill
Morphine
MClIphine H2SOc
Na Is
N.
NaCI
"'
N.
N.1
NoB,
NaBr
NaCI
NoCl
NoCI
NoCI
NoCl
N.f
N.f
N.,co,
N.,co,
Na;-IPO~
NalHPO~
NI2S,oJ
",,so,
N.so.
N.,sd),
NalTeO~
NalPO~
NllPi'J
""p,o,
"'10
398.70
400.(/)
400,60
398.80
401.00
39950
399.80
399.20
399.60
39950
399.(/)
400.10
399.10
400.00
399.20
4045
4006
399.8
400.4
400.3
3995
398.9
3995
400.5
399.&
398.5
4<)11
1071.8
1072.1
1071.8
1071.4
1071.7
107L7
1071.4
1071.6
lon,
1071.5
1071.8
lon3
1071.2
1071.0
1071.5
1071.7
1071.6
1071.5
1071.6
1071.3
10711
1070.8
1071.1
1071.1
1070.8
1071.6
YoSa74
YoSa74
Yo$a74
YNAIl77
YoSa74
YNAB77, KNPP74
LcRaT1
SrWaT1, NBMOn
LcRa77
SNMK7S
LBNN78, Hill 69
BiFe76
Lille7S
S"lNsn
Yosh80
LcRa77
Wle7S
YOIh7S
YOIh78
NZB7S
BuBu74
YoSa74
V",..,
OCGHn
GrHe77
GrHe77
SCKK7S
SCKK75
••
BaSl15
KLMP73
WRoM'79
Wagn7S
MVS73
Wagn7S
SOS070
KOK83
NSLS17
HHoDSI
Wagn7S
MVS73, NSLS77
WRDM79
HHODSI
WRDM'79
Swif82
Wagn75
Wagn75
""'''
Wagn7S
Wagn75
MVS73, Swif"82, GMD79
MVS73
GMD79
Perkin-Elmer Corporation
Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Noaa.
NaHzl'OJ
NaH:PQ.
NaHOh
N>N,
N>NO,
N>NO,
NaPO)
NaPO,
N"o,o,
N,,oo.
NaJCrO~
NallrC\t,
NalMoO.
NalMoO.
NalPdCl.
NalSnOJ·3Hll
Na lW(1
N...o,
NaBi~
NaC~
NIjBeF~
N"od'.
NllSiI)
NllSiF.
NIjTaI;
NIlTIf.
N.,z,F.
NaJA-IF,
NairaF,
NaBF~
NaBeF)
NaTaF.
N,,o
NoOOCH
NaJCll.
NaA1SijO,. albile
HydroxysodalilC
Nalrolile
Mol Sieve A
Mol Sieve X
Mol Sieve Y
NaOAc
NoOA<
NaOOCCHlSH
NoO,S",
PiNaOCOCMe:=CHtl
1011.8
1071.1
IIl1l0
10713
1070.8
1071.6
1071.4
1011.7
1011.7
1011.6
1071.4
1071.0
1071.9
1070.9
1071.8
1011.8
1071.1
10720
1070.9
1071.3
11l1l'
1071.8
1071.7
1071.7
11l1l1
1071.9
1071.6
1071.5
1071.8
1071.8
IIl1l7
1071.9
1071.7
10725
107l.!
1070.8
1072.2
1070.5
1072.4
1011.8
10723
10726
1071.1
1071.7
1011.2
1071.3
IIl1l2
MVS13
Swif82
Swif82
WRDM79
SGRS72
Wagn15
Wagn75
Wagn75
Swif82, GMD 79
WRDM79
Wagn75
Aam3
Wagn75
Wagn75
NSLS77
Wagn7S
WRDM79
Wagn7S
Wagn7S
WRDM79
Aam3
NKBP73
Wagn7S
Wagn7S
NSLSn
NKBm
War,17S
WIl17S
Wail7S
NKBP73
Wagn75
NKBf'73
NKBP73
Ba$t75
WROM79
WROM79
WPHK82
WPHK82
WPHK82
WPlIK82
WPHK82
WPHK82
Wap75
IIH0081
WRDM79
WRDM79
HHOOSI
NaKLL
N.
N.
No
N.I
NaBr
N>Cl
NaCI
Appendix B. Chemical States Tahles
NoCl
N,F
N,,co,
NalHpo'
NalHPO.
N""'"
N,,so,
N,"'"
N."""
BaSt75
9943
994j
'LMm
9911
990.'
9903
990.0
Perkin-Elmer Corporation
Phv.. ir~1 Ji',1f'rlroni,... nivkinn
SRHII78
WRDM79
Wat,n75
Wagn75
SGS070
988.0
987.1
989.8
989.8
990,5
988.8
988.4
987.8
989.9
990.4
989.7
KOK83
Wagn7S
WRDM79
WRllM19
Swif82
Waga1S
Waga75
Waga7S
Wagn7S
Wagn75
Swif82
Swif82
Swif82
WRDM79
Wagn7S
Wagn7S
Wagn7S
Swif82
WRDM79
Wagn75
Wagn75
Wap75
Wagn75
WROM79
Wagn75
Waga75
WRDM79
Waga7S
WagD75
WagD75
Wagn75
Wagn75
Wagn75
BaSt75
WROM79
WROM79
WPHK82
WPHK82
WPHK82
Wags75
WROM79
WROM79
202..
202.J
•
NllTeO~
99O.S
N.,po.
990.1
989.8
989.1
.989.8
989.8
989.6
989.3
989.4
990..
9911
9891
991.0
990.2
9903
989.'
990.7
990.,
998.1
987.7
NIHlP02
NaHlPO.
NaHCO)
NaNClj
NaND)
N.ro,
N.ro,
NaJOA
N,,oo.
N,,.,,.
NalMl:JOi
N.PdC4
NIlSIlOJ . 3HJC)
N.wo,
Nv..o,
NaBiO.l
N"od'.
NllSiF,
NIjTIf,
NIjZrf,
NaJA-1F,
NaBF.
No,Q
NaOOCH
Na2CtO.
Mol Sieve A
Mol Sieve X
Mol Sieve Y
NoOA<
NaOOCCHlSH
NaOJSPh
''''
988.7
Nb3d
Nb
Nb
Nb
Nb
Nb)Te.
99"
990.1
998..
989.8
989.'
989.7
990.1
990..
989.8
991.0
NbT~
Nb"'NbS<,
NbS,
.'N
NbBr)
NbCI,
202.2
201.8
202.8
2018
2010
203.4
207.7
203.8
207.1
"".0
NyMaSO
MSC73, NSCP74, WRDM79
""'
""'0.,'
Bah175
""'.,
Bah175
MSC73
Ball175
MSC73
MSC73
Appendix B, Chemical States Tables
Handbook of X-ray Photoelectron Spectroscopy
NOO
NbO
NbO
202.8
203.7
'04.7
SPB76
Bahl75
Nb,O,
""j
N~NOJ)j.6H~
LiNbO,
KNbOJ
207.1
SPB76, MSC73, fCFGn.
NFS82, NGDS75
SlHo79
MSC73
""'"'
NiOa.·6H~
,..,
2()6j
CoNbA
DlNbA
CazNbih
RhNb(h
C~NbtChiH~).·
4tiJO
CW''''''.xE4Nh
Br~Nb60I1XBt4Nh
Ch{N~J
IIXP1)P).,
CIiN~IlX~)'
"".0
206.7
2065
'01.7
204.7
204.7
204.6
204.'
R:FG71
Bah05
Bah175
NFS82
NbO,
Ni(OHh
Ni(NOJ)j
NiAIA
NiAIA
Ni~~
BeWa79
BeWa79
NiFeA
NiRhJ0.
NiSO.
NiSiO:I
NiWa.
NaNil06·BlO
K1NiF.
&W.79
N,CO,
&W.79
&W.79
BrlNi(NHlli
Nd3d
Nd
Ndi})
980.8
9820
•
SaRaSO
N~NHUi(CIC4n
N~acach
N~OAeh·
N,C",,)
Nd,(),
120.8
Nels
Ne in zraphile
Ne in Ag
Ne in Au
NeinCu
Ne in Fe
8611
862.4
861.6
8622
863.4
SaRa80
•
CiHa74
CiHa74
CiHa74
Wap75
ChNi(Ph)!'h
ChNi(PhV'h
CIv"fi(PhP>h
N~dirrabylglYOlimh
ChNi(bipyridyl)
Ni(SPbh
ChNi(NlizCON~ICONHili
N(2-amillObenzolleh
1f(P(llElh).
NeKLL
Ne in Fe
818.0
857.7
856.4
861.0
854.8
855.9
,56.5
ChNi(EtlPh
Brl Ni(E4Nh
85"
854.2
""
855.0
854.4
857.0
855.0
855.7
854.6
856.7
855.9
853.8
854.7
855.2
KiWi74
DPsn, U:WS79, McCo75
TRLK73
NZB78
SDR 80, LrwS79
NgHe76
U-'WS79
H'"lB78
McCo75
NFS82
ShRe79
SRD79
NgHe76
NZB78
TRLK73
BCGHn
NZB78
NZB78
NZB78, TRLK73
NZB78
BCOH73
QAd7I, TRl.K73
BNSA70
N'lB78
STHU76
N'lB78,YoYaBl
NSWU77, NZB7a
BBFR71
YYS78
YoYaSl
TRLK73
FaBa79
EMGK74
NiLMM
Ni2p
N;
NiO
N;
N;
N;
N;
Ni~Yb
NhSi
NiSi
NiS
NiS
If'
Nil ·6Hi)
l
N'"rCh
NiF1 '4H1O
N<)
N;o
N<)
NiJO)
710
Wagn75
,56.,
855.9
4H1O
N~CsHs)
Nd4d
855.8
855.6
857.1
856.9
855.8
851.4
856.1
857.2
855.4
855.9
856.8
852.7
853.8
85"
85"
8518
852.7
8517
853.0
8535
852.8
853.2
855.1
855.3
856.7
857.5
853.5
854.3
854.3
857.3
••
LANM81
illlP82
PfJ82
WRDM79, ShRe79
WWC78
GGM82
GO."
ShRe79
DPS77
NgUe76
NZB78
TRLK73, KIHe83, YVm
NSLS77
WRDM79
DPS77, KJHe83, LFWS79,
NFS32. NZ878. SRD79
KiWi74. McCo75
NgHe76
'"
N;
N;
846.1
846.2
846.1
o Is
AlzOJ, sapphire
A.,o
AsO
AI,Q,
AIIO. sapphire
AhQ" alpha
AlA g:unrna
"'A,,o,' '
0,0,
"'"
Il<O
Biz{))
C.O
531.0
529.2
528.6
531.3
531.0
531.8
530.9
531.7
531.6
533.0
,2>,
531.7
530.0
529.4
PfJ82
WRDM79
KiWi74, KGW76
•
Scho73
Sl::ho73, SRD80
Nefe82, SORBO,
BGD75, ZS0S79
Tay182, WPHK82
WPHK82
BanSJ, wPHK82
Tay182, MlNN78
WZRSO
NGDS75
laYaSl
NGDS75. NFS75, HJGN70
NGDS75, DSBG82
JnYaSl
Perkin-Elmer Corporation
Physical Electronics Division
Handbook of X-ra)' Photoelectron Spectroscopy
C,O
CdO
CdOl
<>,0,
CoO,
C""',
COlO.
ColO.
CoP.
00
CrlO)
CrlO)
00,
531.3
529.2
530.3
530.3
529.2
529.9
530.2
529.6
529.7 .
530.1
531.0
Cu!>
CoO
531.5
529.3
530.2
527.5
530.5
530.3
529.6
F~O)
530.2
Fel0)
Fe:JO), alpha
feJO), gamma
FelO.
FoO
Ga!»
529.6
529.6
529.8
530.0
529.8
530.8
Goo,
MgO
MgO
M,O
M"O
Mn)O.
MnJOl
M"o,
MnO:!, bela
MoO,
MoO,
MoO,
MoO)
MoO,
M"",
520.0
533.2
530.4
529.9
529.8
530.3
530.5
528.6
531.3
529.5
530.0
531.2
532.1
529.1
529.6
529.6
530.0
529.6
531.l
530.7
529.9
530.9
531.6
530.4
NajO
Nb,Q,
529.7
529.6
00,
C,o,
0,,0,
H,o
HID,
hO~
ln lOj
lnj0:2
InlO)
",,0,
LiJO
w2D)
Perkin-Elmer Corporation
Phvsical Electronics Division
WZRSO
NFS75, NGDS75, SBBSO
HGW75
PKHLSO
NGDS75
McC075
NGDS75, WZRSO
BGD75
CBR76, 01'0079. I1SU76
BGD75, NFS82, NODS75
HoThSO, OPS76,
WZR80, BOrPSI
NGDS75
JIKK76
OPS76
YaBaSO
YaBaSO
HMUZ78, MSSS81, RB072, Seh073b
MSSS81, Mct::075, HMUZ78,
RBOn, Scho73b
NGDS75, WZR80,
Kilk73, Limo81
HSU76, NSLS77
Meum
MeZe77
MeZe77
McZc77
NGDS75, Scho73a,
WZR80, ZSOS79
NGDS75, WZR80
NGDS15, WZR80
NGDS75
Shcr76
NGDS75
CFRS80
LAK77
NGDS75
CSFG79
NGDS75
NFS82, NGDS75
lnYa81
WZR80
OH[75
OHl75
OHI75
NGDS75, WZR80
OHI75
PCLH76
CGR78, KBA\V74
SaRa80
NGDS75, NFS82
PCLH76
SaRa80. KBAW74.
I1MUZ78, CGR78
BaSt75
OBPSI
Appendix n. Chemical States Tables
Nb,O,
Nb,O,
NbO,
NdlOl
NilO)
NiO
530.6
531.3
530.7
530.6
531.8
529.6
P{l~
ti32.2
532.6
533.6
534.3
528.9
531.6
529.4
530,9
521.5
528.9
527.4
529.0
529.3
529.3
528.6
531.4
530.1
531.9
530.4
529.4
529.4
530.7
530.0
530.0
533.0
534.3
5325
5328
5329
5325
5327
533.2
530.1
530.6
(bridging 0)
(bridging 0)
P{ls (nonbridging 0)
I'{ls (nonbridging 0)
PbO
PbO
PbO.rhombic
PbO,rhombic
PbO, telrngonal
PbO, telrngonal
P{l~
PbD,
PbD,
PdO
PrjO)
PR),
~O,
RoO,
RoO,
RIljO)
RUOI
R"o,
RuO)
SbIO)
Sel0l
Si0:2
Si0:2
Si0:2
Si0:2, gel
SiDl, Yyoor
SiOl, alpha cristobal
Si0:2, alpha quartz
Si0:2, alpha quartz
5"0
5"0,
5<0
Th,O,
ThO,
TeOl
11\01
TiO l
Uo,
UO,
Y1Dl
V,o,
Y10 l
V,o,
WO,
530.5
528.8
528.8
530.2
530.0
529.9
530.4
529.9
530.5
530.0
529.9
530.5
530.4
NGDS75, NFSS2
SaRa80
SaRa80
SaRu80
KiWi74, NgHc76
DPS77, LFWS79, NFSS2,
NGDS75, SRD79, WZR80
NGDS15
OMD79
NGDS75
GMD79
NFS82
WZR80
KOW73
ZiHe78
KOW73
ZiHe78
KOW73
TLR78
KGW74
SaRaSO
SaRa80
CMHL77
BHU81
BHUSI
CMHL77, NFS82
MWLF78
KiWi74, McGi82, SaRaW
KiWi74
WZR80
NGOS75, WZR80
BarrS3, KMH78, NGDS75
Kilk73
NSLS77, SRD79
WPHK82
WPHK82
WPHK82
WPHK82
TLR78
ADPS77
AD1'S77, LAK77, MWl.FJ8,
NGDS75, TLR78
VaVe80
SaRa80
SaRa80
GBPSI. SBB80
NGDS7S
MWLF78, WZR80, NGDS75
MSSS81
MSSS81
CGR78
KKL83
BCM78, KKL83
NSLS77, NODS75, NFS82
CoRa76
Appendix B. Chemical Stales Tables
wo,
".,
ZOO
530.4
W,
530.2
5JO,'
531.4
531.5
531.5
531.2
531.2
z.o,
A__Oflh, bayoite
A1(OI/h, :ibbsile
AIOOH, boehmite
Co(OHh
O(OHh
CI(OHh
R(OHh
FeO'OH
FeOO*H
In(OUh
KOH
UlH
Mg(OHh
NaOH
Ni(OHh
AII'O<
c."""
c..P,o,
KjPO.
I4P2OJ
LhPO.
u.p,o,
"'' ' '
Na.P~
(bridling 0)
Na.PzOJ (nonbridgin8 0)
NaPOJ (bridging 0)
NaPOJ (noabridging 0)
"NO,),
D(NO,J,
<No,
Pb(NOJ),
BaW.
""""
c.so.
O><Sl1b
,<so,
K;SO.
NiSo.
I'bSl1
z.so.
N.;;o,
NalS20,
I'bSOj
PbS,o,
..,co,
a.co,
'DCo,
CdCO j
CuCO)
Li,CO,
232
5311
531.3
530.1
531.2
531.8
BI.8
531.2
530,9
532.8
531.3
532.8
5JO,I
5JO,2
53<1.4
530.1
531.5
531.7
5JO,4
531.!
532.9
531.5
533.4
5310
m.6
532.7
532.7
531.8
532.5
5310
5311
5)2,4
531.2
5311
5315
5315
531.2
531.8
530.8
531.1
5JO,6
531.)
531.4
531.4
531.5
531.5
Han~book
or X-ray Photoelectron Spectroscop)'
CoRa76, KMH7&, NFS82,
NGDS75, NSLSn
NFS82, NGDS75. NSLS77,
StOO73, WZR80, ZSOS79
NGDS75
Cseto,
WZRIlO
LiC1o,
5314
WPHK82
WPIlKSO
Tayl82
HSU76
DPS76
MSSS81
HSU16
McZe77
MeZe77
N.c](),
5310
AhSiOs. sillimanilc
AIJ5iOs. silhmanile
Ca,(HSiOth
COlSi(h
Na!SiO'" SHt)·
WZR80
NllSiOl · 5HP'
Kilk73
CSFG79, WZR80
Ni»iO.
NiSiOJ
MgSiO*)' 2Hjl}
5323
532.0
532.8
531.0
532.0
529j
5JO,6
529.9
532.2
533.5
531.4
532.5
532.7
532.6
532.2
SRD79
ORi16
CIRi16
PCLH76
NgHe16
ACHTIJ
HNUW18
BaSt7S
LFWS79
CFRSSO
MVS13
MVS73
MVS13
MVS73
MVS13
MVS73
MVS71GMIm
GM079
GMD19
GMD79
GMD19
a..sW8J
a..sW8J
NSLS71
TLR78
CLSW83
WZR80
a..sW83. WZRSO
OPS16
N.,co,
PbCO,
531.6
531.2
5317
532.2
Ket04
KetOl
532.3
RbClGc
5318
AI~iOl,
kyanitc
531.3
AI~i(h.
mullile
531.6
MgSiOl'21[zO~
Ah(MoO.h
AIt(WO.h
e.c""
c.MoO.
COWO,
p.Benzoquinone
Hydroquinone
PlCOO",
p(MeJSi(O»
Methylsificone Resin
Phenylsilicone Resin
PhCONlh
531.3
OsCh
00,
00,
Oo(HSQ,),
K""'-
WPHK82
532.5
ORi76
WZR80
CIRi76
CIRi76
531.9
lJ'WS79
530.6
".7
"6
50.2
511
'"
5V
WZRSO
ZiHc78
ZiHe78
Os(NHl)~2h
0s(NHllli'llBr2
HGW75
52'
O:l:(NH~iliBf2
51.6
522
WZR80
Os(NI!JhN,cb
KPsl;NO)Brj
K10s(NO)Ch
HOs(Ph]P)CI(CO)
CSFG79
o.a.("J'h
No'' '
WZRIlO
a..sW",
CLSW83. WZRSO
HGW75
KzOsBr6
K,o.a.
K,o.a.
K,o.a.
K,o.a.
Ki>sOl.(OH).
AnSw74
AnSw74
531.2
531.6
521
51.9
52.9
510
531
515
519
55.2
50.9
LimoSl
WZR80
NSLS77. Nefe82
Zil1e78
\\7JtIlO
MVS73
MVS73
MVS73
MVS73
MVS13
MVS13
AnSw14
531.9
Os"
'"'"
'"
HHDOSI, WlRlIl
513
53.4
51.l
52.6
m.
':II
NFS82
NFS82
OYK14
OYK74
LBNN7&
WPHK82
WPHK82
WPHK82
LBNN78
•
Folk13, BNMN79
RHHK70
Nefe78
SaRaSO
FoIt13
Ncfe78
Nere78
NcfdS
FoIk73
Collen
leBrn
Ncfe78
Ncfe78
Folk73
FoIk73
FoIk73
FoIk13
Nde78
Nefe78
Hcfe7S
leBr72
Perkin-Elmer Corporation
Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
OsOilllPMe2n lrm
OsCh(PhPMeJ)J Iller
OsOillll'MeUi lrans
,,
53.0
51.1
SI)'1
LeBr72
LeBr72
LeBr72
"""""
GaP, anodiany oxid.
GaP, thomally oxid.
'"
'In'',
"
In',
.,po.
",,po.
K,HPO.
K)PO.
LhP04
NaflP<h
NaY'O.
NaHlP<h
NaPOJ
RbJ!'O.
NaHjPfh
""",0,
",',0,
LilP~
Na.PA
RbJl207
P.01o
OPeh
129.9
130.0
130.0
129.6
129.7
128.8
128.5
129J
128.3
129.~
128J
129.8
132'
132.1
132.8
133.2
133.6
133.1
132'
134,2
134.2
132.5
132.6
132.6
132.6
134J
133.2
Ill!
135.3
Ph,p
135.7
13SJ
133.4
130.9
Ph,p
Ph"
Ph,ps
130.9
130.9
1325
Ph""
Ph,po
132.6
132.5
PIlJPBh
1322
132.1
1322
1320
1323
1323
134.3
133.1
134.7
SPell
SP(Nrh)1
PhJ!'BBl)
Ph,p1lCJ,
Ph,FBfJ
PhlPSI!
""P&II
(PJ>Sh\'
(PJ>ShfS
(PbOh\'
(PhOhPS
(PhOlJI'Se
(PhO)jI'O
(PhOhl'O
P2p
P (red)
Co"
Aplicndix B. Chemical States Tables
Perkin-Elmer Corporation
Physical Electronics Division
~
I'h"POBD!)
I'h"POBQ)
I'h"PODF)
NSD1J75
ScBrSl
NSD1J75
NSD1J75
WITa8O, IMNtn9. NIMN78
MIN81
MIN81
CFRSill
"""
""PH,
""'"
""PC!
Mel'PhJBr
NSD1J75
NSD1J75
CFRSOl
1'h2PO{OH)
OI'O(OOh
0PIiN'"
0l'O,0O
OP(NMe))J
(PbJ'hl"·P,
(PI1rhPF,
MVS13
Pl(P>,P),
""'"
Ph,l'=CHCOPh
Ph,l'=CHCOOM<
CJ,N,Ph"h
MVS73
MVS73
Swif82, WRDM79, WaTaSO
MVS73, GMD79, Swi182
Swif82
Swif82,GMD79
MVS13
Swif82
MVS13
MVS13
MVS13
MVS7J, GMD79, Bert81
MVS73
NIMN78, NGDS75, CFRSSO,
Bert8!. GMD79
F1We75
FIWe75
F1Wc75
Da!c76. NSMS79,
TRLK73, GBMP79
HVV79, LMFSO, SRH72
MSAV7I, GZF73
HVV79, STA74,
RWe75, MSAV71
HVV79, MSAV71
GZF73, SfA74, AWe75,
MSAV7I, HVV79, BNSA70
HVV79
HVV1')
HVV19
HVV19
NSWM80
NSWMSO
MSAV11
MSAV11
MSAV11
Ni(COh(PhJPn
Ph4f
Ph
Ph
Ph
Ph
Pb
"""",
Pb"
PbS<
PbS
PhI,
PbBrj
Ph~
PbO
PbO
Ph,o.
PbO,
I'h(OHh
I'h(NO,j,
1'hSO,
J'hS(h
I'hS,Q,
""""'
I'4I'h "
Ph,I'bCI
Ph,J'bCl,
Pb(OAch
Pb(OAe).
134.7
134J
133.6
J3.U
l3J.7
133.4
l3J.3
133.3
134.8
135.8
135.2
133.4
133.0
133.5
132.8
133.0
136.1
133.5
131.2
132.2
IJ2j
132.4
iliA
136.9
136..01
B6.8
136.8
136.8
136.8
137.4
137.4
137.6
138.7
138.8
139.0
138.9
138.9
138,0
137A
138.4
139.3
138.6
139.4
138.4
137.3
138.2
138.9
139.4
138.5
137.2
MSAV71
MSAV71
CFRSill
AWe75
HVV19
HVV1')
HVV79
MSAV71
AWe75
AWe75
AWe75
AWe75
HVV19
LMFSO, SRHn
HVV19
SRH'
I),lF!O
I),lF!O
Rizgn
Dale76, srA7~
STA74
BNSA70
TRLK73
~
LKMr73
SfS22
BeA8O, K0W73, KiWi73,
TLR78, WRDM79, WaTa80
HSBSSI, OCH79
HSBS8l
SfS22
SfS22
MoVan, SFS77, 'liHe78
MoVan
NeFe82
MoVan
KOwn, 'liHe78, WRDM79,
NFS82, NSSPSO, MoVa73
MoVan, BeASO
MoVan
BeRSO, KOW73,
TLR78, MoVa73
NSS,,",
BeFl8O, TLR78, NSSPlIO
Zille78
NSSPll, 'liHe78
ZiHe78
""82
MoVa73
MoVa73
MoVa73
""'"
""'"
233
Appendix B. Chemical States Tables
Handbook nr X-ray Photoelectron Spectroscopy
Pd 3d
P,4d
Pd
Pd
Pd
Pd
Pd
Pd
Pd
335.1
335.1
335.2
335.2
335.5
335.2
335.3
Agt>PdIO
AgsOl'dJO
Ag,OPdrO
AJ,OPd,O
3J4.6
334.9
334.9
337.4
336.2
336.8
336.2
Mg:rsPd~
Pd~i
Pd,5i
Pd.
PdBo
"CI
PdO
PdOI
NatPdo.
K,1'dCIo
K2Pt1Br.
K2Pd(N'h).
K2PdC4
BrIPd(PhlPh
ChPd(RlJI'h
bPd(",P),
(CNhPd(",Ph
",(Ph,P),
ChPd(~P)l
Pd(Ph~
Pd(OAch
Pd(SPhh
336.4
JJ1.l
JJ1.8
336.3
337.9
338.0
338.2
JJ1J
339.0
340.2
337.8
337.8
337.5
338.2
336.6
342.9
336.0
338.6
337.7
$
NyMaSO
BiSwSO
BiSwBO
BiSwSO
JHBK73.Asam76
WRDM79, WtAnlltl, BHHK70,
Scllon. GGM82, KBAM12
WcAn80
-"so
W<A"",
W<A"",
WeAnSO
GGM82
AWUQ
KBAM12
KBAM72
KBAM12, NKBP73
KGW74
KGW14
SeTs76
KBAM72. NKBP73
KBAM72
KBAM12
KBAM72, Nefe78
KBAM72
KBAM12, NSMS79
KBAM72
KBAM72
NSMS79
BNSA70
NSMS79
NSMS79
BOffin
I'd MNN
Pd
A""PdP
A""P<W
A&!OPdIO
At.OPlhQ
MglSPdn
Pm 3d
PmCI,
Pm4d
PmClJ
Pr~l
1'<0,
234
""
"
"PIS;
71.2
71.0
71.2
",s;
"CI
725
"C~
"0
1'<0
"0,
"'"
P1(OH)l
K2Pll6
KlPlBr.
K2P1Br,
K2Pl:U
K2P1CI.
K2P1C4
K2P1F,
Pl(NHJ).Brl
Pl(l%hCIl
Pl(NHJ)'Cb
P1(NHlJoCI.
Pt(NHJ)z(NOm
Pt(NHJMNOili
K2Pt(OHlri
K2f'1(N0V0
K2f'1(N~Ji
WcAn80, WRDM79
W<AolO
71.2
73.0
73.6
15.5
73.8
74.2
74.6
75.0
n.6
73.4
72.6
74.6
73.0
73.4
15.4
77.6
73.4
73.2
73.4
76.3
73.7
74.4
75.1
74.1
15.9
72.4
71.4
71.4
_olO
WeAn80
WcAn80
OIPl(PhtPh cis
Q 2PtO'blP)z cis
O.Pt(EiJPh
ClIPt(EhPh
HCIPt(EltPh
1033j
MNTB70
o,l\{Ph,P),
73.0
Pt(SPhh
Ph,PPt{SPPhl)
ChPt(EllPh
hl'l(EllPh
hPl(f\.1cJlh cis
hPtCMe.tPh traItS
hPttCHJCONH).
Br2Pt(CtbCONH).
CIIPI(CHJCONH).
718
"""'"
128.3
MNT1l7Q
931.8
933.2
935.3
$
SaRa80
SaRaBO
"'oM
SaRaSO
PI4f
327.8
328.8
329.1
329J
315.5
326.4
"'3d
'"
"""
"""
116.1
116.2
(NH.)lPtCl.
Pt(Ph)!lh
"(Ph""
71]
73.0
15.3
75.9
716
11.8
13.1
72.5
716
711
74.6
14.9
74.8
m.
W'
$
lHBK73
BHUK70, KW07I, Nefen,
&0072, WRDM79. Wagn75
CMHL77, CaLe73,
HaWi77, BACB75
GGM82
GGM82
EPCCl5
EPCC75
KWD71
EPCCl5
KWD71
EPCC15
HaWi77
SNMK18
SNMK78
SNMK78
CMHL77, EPCC75, SNMK78
Wagn75
Collen, EPCC75, LeBr72,
SNMK78
SNMK78
Nefe78
CMHLn, Neft7S
SNMK78
SNMK18
Nefc78
CMHLn
SNMK78
SNMK78
SNMK78
KaEl19
Nefc78
Rigg72
CAB71
Riggn
LeBr72
Nefe78. Rigg72
RiUn
Rig:72
BBFRn
Ne5a78
Rigg12
Rigg72
CAB11
CAB71
NeSa78
NeSa18
NeSa78
Perkin·Elmer Corporation
Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
0,zI't(H2NCHJCH!NHm
Qzl't(cydooctadim)
KIPlC\
710
719
318.1
EPCC7S
196<>.7
21)41.1
Wago78
Wagn78
YMK78
CMHLn
Pt MNN
~
"
Rb3d
Rb
RhO
RbN,
Rbi
RbBr
RbC1
RbF
R_
RboP""
Rbe'"
ilLS
109.9
109.8
110.4
Ro
no
Ro
Ro
RoO,
RoO,
''''<CIo
a,Rdl(Ph>1'h
Q,R<N(Ph,p),
a.R«El,p,
(\Rc(PMe:!Pbh
C1 jRc(I'MeIPbh. mer
OlRc(PMClPbJ.. uw
C1ReNi:I'MtJ:A1)., trans
••
109.9
109.8
110.0
110.0
110.4
40.3
40.S
•
Re 4r
4QS
41.0
43.6
468
442
419
417
413
416
41.8
"",WOo
"'bO.
RbTaO.
RhVo.
K,'hClo
SGRS72
MVS73
MVS73
MVS73
MVS73
MVS73
MVS73
MVS73
lJo.O
Appendix n. Chemical SUiles Tables
FJ-IRSO
SSHU83, WRDM79
RHUSI
BHUSI
BHUSI
CoHen, LeBr12
Folk13. Ncfe1S
Nefe78
'-'Bm
'-'Bm
4QS
'-'l1<n
'-'l1<n
40.3
LeBrn, FoDm
KIRhF,
KJRh(NOJJ.
K)Rh(N01J.
Rh(NHj)J:!]
Rh(NOJ.O)
C1Rh(Phlfl»
a,R1(Ph,Ph
C\Rh(Ph,Ph
B<oRh(I'h,I'h
NORI(1'h,P),
a,Rh(I'h,P),M<CT<
H(COjRl(I"',p),
C1(COhRb(Ph,p)
CI(CO)Rh(PluPh
CbRhI(cyclooctadih
RhiOAc).·2H10
Rh(NHt:H1COOh' H2O
Rh
Rh
Rh
RhI,
RhO,
RbCh ·3Hil
RhCIJ· 12H:oO
Rh,O,
Rh,o,
B""",,,
BoRhA
DRhA
CoRbp.
PbKh2O.c
KRhOl
LiRh01
307.2
301.2
307.2
30<.
310.[
310.0
310.1
30<'
30<2
30<4
30<'
30<8
308.8
308.6
308.5
308.9
•
NyMa80
OIlT19, WRDM79, FHPW73
Nefe78
0IIT79
CWn82
CMHLn
NFS82, CMHLTI
0IIT79
NFSI,·
NFS82
NFS82
NFS82
NFS82
NFS82
NFS82
Zo'hA
30&7
NFS82
RhjMo(%
309.2
NFS82
Perkin-Elmer Corporation
Ph)'sical Electronics Division
309.'
lO8.5
30<7
30<.
308.7
309.0
310.3
Ru 3d
NFS82
NFS82
NFS82
NFS82
SNMK78
Nefe78
SNMK78
SNMK78
Nefe78
Nde78
CWH82. Nde78, 0ITT19
CWn82
Nefe78
Nefe78
Nefe78
OlWa79
OIIT79
Nefe78
CWIl82, OIIT19
CMHL77, CWH82
Nefe78
NPBS74
•
R,
R.
R.
18111
18110
18111
RoCI,
RoO,
RoO,
R.o.
281.8
18117
28ll
RIl(NBJ)sNlll
2812
2805
28?S
27&6
LeBr12
164.0
164.1
•
Ru(NHM~lBr1
Ru(NHM~:Ch
ChRu(PhPMelh mer
Rh3d
309.4
309.2
3095
309.2
3098
3122
310.5
311.1
310.5
309.8
301.4
309.7
309.7
lm.'
.lO8.2
2833
S 2p
S
S
..,
CdS
CdS
eo,s
A."
CdS
CdS
""F",
Gajo.';'
G"
G<S,
HgS
MoS
1601
161.7
1620
1613
1624
1620
161J
16\.6
162.9
162.2
161.8
161.1
162.0
162.5
NyMaSO
Folk73. BHHK1O, KiWi14,
FEMY77. WRDM19
",~73
SlRaBO. KiWi14, McGi82
KiWi74
KiWi14
",~73
Folk13
Folm
SNRS76, WRDM79,
RiVeS3. LHJG70
SiWo8O
BSRR81
Urro81
BSRR81
NSS""
Umo8I. NSSPSO
BSRR81
Bind73. LimoSl
Bind73, UrnoS!
llWB12
SFS77
HKMP74
NSSPSO
LimoSl
'"
Appendix B. Cherni",' Slales Tables
MoS,
162.5
SSOTS!. StEm. PCLH76
N"s
N,oS
NiS
''''
SWlI7I
PbS
160.8
Sb,S,
161.8
161.1
161.5
""us,
US
161.8
162.2
162.6
WS,
WS,
W
162.1
163.0
GeS1TeAsl
N»(55'O,)
161.5
161.6
161.6
162.5
161.7
167.1
,,so,
167.5
NatS~
165.6
166.6
167.2
168.6
GeSJASl
KFeSl
Nat(S·SOJ)
NaiS-SO))
Na1S0J
Na§(h
A.,so.
Al,(so.h
a.so.
CaSa.
COSO.
CoSo.
164.0
,,8.8
168.8
169.0
169.7
169.3
"",a.
,,8.8
F<,(so.h
169.1
169.1
,,so.
mo
LHlG10
ShRe79, NgHe16, DPsn
SFSn
BOt"
SFm
SNRS76
SNRS76
Nglle76
Wagn7S
LimoSl
HKMP74
HKMP74
Bin:l73
Wagn7S
UilGlII
LHJG'Xl
TMR80
SWH71
WaTa82, lllJG70
TMRSO
TMR80
LIUG1II
SiWoSO, a.sW83
CLSW83
Limo8l
WaTa8O, NSSPSO, Um08J
Lidl. UUG71l
LHIGIO
TMRSO
LimoSl
TMR80
Udl, NSLS77,
Nefe82, ShRe79
MnS04
Na}S04
NiSo.
168.8
169.2
PbSa.
168.'
NSSP80
srSo~
z.so.
169.1
169.1
169.s
No,so,
166.8
SoN>
164.6
174.4
177.2
167.4
168.1
168.1
170.0
162.3
163.7
163.5
174.4
163.7
163.7
163.3
163.1
163.2
CLSW83
Chad73
Nere82
BCM18
SOI077
WaTa82
LHJG70
WaTa82
UilG10
U(SO~h
SF,
SF,
SO,
So,
soa,
SOF,
SP(NH)n
SPCb
S,a,
S,a.
CS,
(CHJCQOHhS
(CIIIPhhS
PhSH
PhoS
236
Handbook of X-ray Photoelectron Spectroscopy
Ul1070
LlUG10
FlWe75
FlWe75
LIllG10
LIllG10
UilG1ll
LHlG1II
LHJG70
LHJG70
LHlG70
Ph,ps
Ph,PS
P11)AsS
PhSSPh
PbClhSSClhPII
l!'l>SbP
l!'l>SbPS
BuSSBu
MeSSMe
NHJCSNH2
2·Mm:apIObenrimidn
2·Mereapobcnzimidll.
BuNH3 HSO;
lJu;NHS04
ElJNHHS04
1'hSCM"
TetRthiouplthalc:De
Cysteine
Cysceine 110 hydrate
Cysteine HO hydrate
MClbioniJle
NBMH.SO»H
1M"".
M,,so
(PhOhhSO
PhlSO
"',so,
164.3
161.
161.8
161.7
164.4
164.2
163.6
163.5
164.1
164.3
1611
162.2
162.8
167.]
168.0
168.5
162.4
164.4
163.2
163.1
163.6
162.8
161.8
164.s
166.'
165.9
166.0
169.0
OiJOS(O)OQiJ
,,8.4
"""'"
169.3
168.5
166.3
167.9
~CH~
PhS01Na
p-NHl4H.SQMl4NHr
p-Nth4H.tS02NHI
"'~
p-NfuCJioSOJNa
p-O:!NCJt,SNa
COlN411~SH
oWl",",,"
~CJt.SMe
o-OIN4H.SNH1
o-OzNc.H.SCJ
p-(hNCH4S01F
o-OJNCl-I.S01F
PhOl»SCJhPh
PbQI§tSOCJhPh
PhOhSS"OCH1Ph
PhOl§tS01QhPh
PhCH~S·O:zCH1Ph
(OhhS+I.
(CHWS~OII·
(HOOCCH>hS<Oi,coo.
168..
168.'
UilGlII
AWe7S. MSAV71
HVV79
HYV79
RiVeS3, UUG70
RiVt83
MSAV7I
MSAV11
RiVeS3
RiVeS3
LeRan, NBM073, SrWaTI
YYS79
"''''''
EvRe81
EvRe81
EvRc81
PiLu72
RiVeS]
L1Ma19, LHJG70
SSEWJ'
LHIG70
BBFR77
HaSIl?3
UilGlII
LHlGIO
LHIGW
LHJG71l
LHlG70
UilG10
LHlG7lJ
LHlG1ll
LHIG7ll
LHJG70
LHlO;,)
LHlG;,}
LHlG1ll
LHlG1ll
LHlG7ll
UUG70
168.1
161.0
163.5
163.9
163.5
164.1
163.9
169.6
170.0
163.6
163.7
165.9
163.9
168.0
165.8
168.2
166.2
LJUG'70
LIUG1II
LIUG1II
LHlG70
LHJG70
LHlG70
LHlG1ll
LHlG1ll
LHJG70
LHJG70
LHlG70
UilG1ll
LHlG1ll
2116.1
2115.9
WaTaSO
W",,18
SKLL
NiS
NiW§
IT\.
Perkin-Elmer Corporation
\ j ! Physical Electronics Division
Handbook of X-ray Photoelectron SpectroscOIJ)'
WS2.
""""
~SS*O.ll
NaiS*SOiJ
a.So.
so,
SF.
2115.6
".,.,
2107.8
2112.5
2108.0
2106.2
2100.5
Wap78
WaTa82
Wagn15
Wagn75
WaTa80
WaTaS2
WaTaS2
Appendix
S<2p
S<
398.6
"""
401.8
S<
S<N
Sc:-O,
C1Sc(C l lhh
Sc(C~H.\XC,HI)
51) 3d512
Sb
Sb
A.b
Sb"So,
Sb,S.
Sb>'.
Sbb
SbCl,
SbFJ
Sb,O,
Sb,O,
Rb,.lIblBr,
Rb,J$bll,
Cs1Sbll,
Cs1SblBl't
C"SbA
c.,sbA
C"",,"
Co(NHillSbBr,
Co(NH,~
KSbF,
KSbF.
NLIbF.
C&F,
KSb,F,
K1SbFl
Na~bF,
BuNH,$bt.
BuNH,5!J..lI,
E4NSbF6
Pb,sb
Bu.JSb
PltJSbBrl
Me,sbBrl
Pb,sbS
{C,tHnhSSb
"""""'"
SbMNN
Sb
Sb~J
Sb~s
Sb!Ol
KSbF,
528.3
528.2
52&.6
52&.0
'''5
529.2
,,0.,
"<l9
531.1
530.0
BO.8
529,9
529.9
529.2
530.0
529.3
,,0.,
530.9
')0.1
')0.'
"23
5329
5321
BO.6
53L2
BLO
531,3
529.6
529.9
B14
52&.9
52&.1
'''J
')0.3
",.1
529.8
531.7
464.1
4611
462.2
462.1
454.4
Perkin-Elmer Corporation
Physical Electronics Division
•
HSBSBI,MSV 13,PVVA79,
SFS77,WRDM79,Wagn15
MSV73
HSBS81
MSV73,Wap15
MSV73,Wagn15
MSV73
BCH15
MSV73
MSV73.Wagn15
MSV73
Tric74
Tric74
BCH75
BCH75,Tric74
BCII75
Tric74
Tric14
Tric74
Tlic14
MSV73
Wagn7S
Be""
aCH15
Tric74
Tric74
Tric74
BCH75
aCH75
BCH75
aCtf75
BCH15
Be""
BCIf75
BCH7S
MSV73
MSV73
WRDM79. PVVA79, Wagn75
Wagn75
Wagn75
Wagn7S
Wagn75
Se3d
S<
S<
S<
"'' '"
""'
G<S<
G<S<,
CulnSe:z
In1SeJ
NbJ5tl
NbS.
PbS<
PbS<
S"S<
SoS<
MoS<,
""'"
S<Q,
S<Q,
""""
""""
">S<O,
Na~J
Na1SeO.
Na~eS.o.
Ph1Se
(BrCJ{.hSe
PI"S.
,,"""'»S<,
(CI4H~h
1,&"'"
39<'
400.7
401.9
401.4
400.2
55.6
555
55.1
55.1
54.6
54'
545
54.0
54.'
54.9
517
514
54.1
517
55.0
54.6
><'
",
59.8
59.2
59.9
61.2
59.1
61.6
,.,
55.8
'"
,.,
'"'
S5.S
'"m
Cl,S<Pb,
''''''''''
57.1
a~l
C"H""",
'"57.1
HSd'b,I'
S<PbI
Pb>S<O
(PhCHiliSeO
(BrCJ14)zSeO
(C.HsCQOflhSeO
PhSeO(OHj
C14HoSeO(OH)
54'
543
,,.
'"
'"
58.4
58.8
59,3
n.
Chemical States Tables
••
SMKMn
STAB76
NGDS7S,WRDM79
WcMe78
WcMe78
•
Sfo'sn. BWlao, l.IcQ182,
WRDM79, wsm, MllIB71
,W""
UeOd82., WSP77
m82, l1WBn
SFSn
lJ<Od82
KJIOSI
KIIOS1
Bnh175
Bnh175
SFsn
WSP1
SFSn
wsm
'WI79
'WI79
BWlSI. IT182
MTHB11. WSPT1
BWISI
MlllB11
BWISI
WSP17
WSP77
WSP77
BWISI
MTHB1!
aWISI
BWISI
MllIB71
BWtBl
BWI8I
aW1S1
M1lIB11
MlliB71
NSWMlll
HVV79
aWISI
MTIlB11
MTHB71
MTHB11
MTIlB11
MTIlB71
Appendix B. Chemical States Tables
FCJi.'<O(OII)
CJCoH&{),(OH)
(MeCJ(4Il.chScOl
(HOC1H..snse
59.3
60.2
60.0
Handbook or X-ray Photoelectron Spectroscnpy
M'ffiB71
MTliB71
MTliB71
,<2
wsm
1301.0
1306.1
lJOU
1l00.8
1297.9
aWI81
WarJl75
aW1S1
sWI81
SWI81
Wagn75
BWl81
BWISI
BWISI
BWI81
aWl81
SeL!\IM
""
"'"
H_
H?5eO~
Na<StOJ
non
""'"""""
1304.0
1304.3
1l02.1
13Ol.'
1301.9
''''''
Q,Sd'h,
I'l>,S<O
Si 2p
99.3
1013
995
&
S<h
~
Si, p-Iype
Si, n-1ype
SUIOO)
!'<,Si
MoS,
MoS,
98.9
NhSi
NiSi
NiSi
PdJSi
PdJo'ii
P1JSi
P>Si
9&8
9&'
99.1
99.6
99.8
100.5
100.5
Si~
1Ol.8
SiS2
SiD,
103.4
103.6
""
SiOl, Vycor
SiDl, qUU12.
SiD"
oJ,.. """""
SiOJlCl
NilSiO.
NiSiOJ
AhSiO l , kyanite
A~SiOs. mullitc
AIJSiO), sillimanite
NaALSiA, albite
BellCr1ile
II Ztolon
Zn.tSh(},(OHh ·2Hll
238
99.0
100.0
99.1
995
99.6
99.1
103.5
103.7
1033
1014
102..
103.3
102.8
103.0
102.6
102.6
102..
103.3
102.0
••
A\VlM. PADS78. WRDM79,
WPHK82, 1ay181, KBHN74
HBSK72
HBBK72
11..R78
ShTr75
Wi'll""
BrWh78
GGM82
GGM82
AW180
GGM82
AW1.8O
WaTaSO
GGM82
GGMS2
WHMC18, WaTa8O,
TayI81.1U78
MoVa1J
KBHN14, NGDS15,
MoYa73, Barr83
WPHK82
WPHK82, TLR 78
WPI-IK82
WFtlK82
lFWS19
SRD79
AnSw74
AnSw74
AnSw74
Wi'll""
a"",
WPHK82
WPHK82
Hydrolysa;lalite
JUoIillde
KaoIi.ite
Mica, Muscovile
Natrolite
PyrojXJyllite
AlSiOs, sillimanite
LiALSiA, spolklmellt
Talc. Mg)!i40.0Hh
WoIlaslOnii.CaJSi,o,
Mol Sieve A
Mol Sieve A
Mol Sieve A. Ca fllll11
Mol Sieve X
Mol Sieve X
Mol Sieve X, Ca ram
Mol Sieve Y
Mol Sieve Y
Mol Sieve Y, Ca form
Klo'ii~
Na:}5iF.
p.MdbyisiL (IiDw)
p-MethyisiL (resin)
p-Phel'Jylsil. (resin)
M~Si
Pb.si
Pb.si
Et,sill
E1Jo'iiOH
Et,siBr
EtjSiCI
Et,siF
F.lJ5i01
ElSie!]
(CHFCHJ,.Si
MeJSiSiMe)
M~iOSiMeJ
Ph,5iSiPbJ
PhJSiOSiPh,
101.7
102.1
10lO
10204
102.2
102.9
102.7
102.5
lOll
102..
lOlA
101.3
101.8
102.2
102.2
102.7
102.8
102.8
102.8
I(M.6
104.3
102..
102..
102.7
100.5
100.1
101.2
100.1
101.1
101.0
lOlA
101.8
102.1
102..
100.1
100.5
100.9
100.7
101.3
WPHK82
"""
WPHK82
WPIIK82
WPHK82
WPHK82
WPHK82
WPHK82
WP!IK82
WPHK82
WPHK82
BarrS3
"n83
WPHK82
"""
"n83
WPHK82
BarrS3
BarrS3
MoVa73
NSLSn
WPHK82
WPHKS2
WPHK82
GCH76
MoYa73
00176
GCII16
GCH16
GCH76
GCH76
GCH16
GCH76
GCII16
GCII16
GCH16
GCH76
GCH76
GCH76
S;(KLL)
50
MoS~
PdSi
SiJN~
SiD,
SiD,,_
S~,quanz
SiDl, aljXJa aistobal
Si~ gel
NaAlSi,o" albite
II Zcolon
Hemimorphilc
Hydroxysodalilt
Kaolinite
Mica, MllSCOvite
1616.6
1611.2
1617.4
16126
,'' '-,
'''''
' ...6
1608.8
1608.3
1609.3
,'' '-.
1610.5
1610.7
1609.0
1609.6
m
WPHK82, roN 77
WPHK82
WaTa80
WaTaSO
KBHN74
WffiK82
WFtlKS2
WPHK82
WPHK82
WPHK82
WPltK82
WFtlK82
WP'tlK82
WPHK82
WPllK82
Perkin-Elmer Corporation
\ j I Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Natrolite
Pyropbyllitc
A1SiO}. sillimanite
LiAISiIO.. spodumenc
Talc, MSJS~Olo(OHh
Wollastonii, Ca)$i,Q,
Mol Sieve A
Mol Sieve X
Mol Sieve Y
p-Methylsil. Oincar)
p-MclhylsiL (resin)
p-Phenylsil. (resin)
1609.6
1609.2
1609.5
1609.6
1608.9
1610.0
1610.1
1609.4
1608.6
1609.4
1608.8
1610.0
8m 3d512
Sm
Sm
SffijOJ
1081.1
1081.2
1083.4
8n 3d512
S"
S"
S"
S"
485.0
484.9
485.1
485.0
Sn alpha
Sn beta
Ag9lSnS
485.0
484.6
485.6
485.2
484.9
485.3
485,6
485.2
486.4
485,2
485,6
485.7
485,6
486,9
486.7
481.0
481.0
486,0
486,9
486,7
A,s"
AuSJ14
Cdw' 5Sn' OOs
C~Snj
[n9lSnj
P~Snj
S~SIl5
SoT>
SnSe
SoS
SnBrl
SuCh
SnFl
SnFl
SoD
SoD
SnO)
(NH4hSnC!I;
BaSnCk
Ba(SnCbh
KSnFj
KISnF,
NaSnFl
Na~nOl
Na2SnOl
Na~nOl
Ph,S0
PI4Sn
486.1
486.8
486.8
486.1
487.6
487.4
486.2
486.7
487.2
485.1
486,3
Perkin-Elmer Corporation
Phvsical Electronics Division
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
WPHK82
WPflK82
WPflK82
WPHK82
WPHK82
WPHK82
WPHK82
•
DKMB76
WRDM79
•
NyMa80
SFSn
WRDM79, PYVA79, LAK 77,
Wagn75, OCH 79
Hcgd82
Hegd82, HSBS81
HSBS81, Hegd82
FHPW73
FHPW73
Hcgd82
Hegd82
Hegd82
Hcgd82
Hcgd82
SFSn
SFsn
SFsn
GZF73
WVV79
MoYa73
MoVa73
ADPS77
WYV79, MoVa73
LAK 77, MoYa73, WRDM79,
NGDS75, WYV79
GZF73
WVV79
WVV79
GZF73
MoYa73
Wagn75
MoVa73
Wagn75
ADPS77
WVV19
MoYa?3
Appendix B. Chemical States Tables
487.1
486.3
487.5
487.5
486.3
487,0
487.6
486,2
487.3
485.6
487.3
487.2
487.2
486.7
487.1
487.0
485.6
487.0
486.1
487.0
HWYV74
WYY79
HWVV74
HWVV74
WVV79
MoYa13
HWVV14
WVV19
HWVV14
WVV79
WVV79
WVV79
WVV79
WVV79
WVV79
WVV79
WVV79
WVV79
OZF73
GZF73, WVV19
S"
437.4
S"S
SnOI
NaSnFl
435.7
432.7
430.8
431.7
PVVA79, Wagn75, WRDM79,
LAK 77
Wagn75
LAK77
Wagn75
Wagn75
""S"
Ph)$nl
Ph.Jo'jnl
Ph)$nBr
Ph)$nCl
Ph.Jo'jnCI
Ph)$nCI
Ph)$nF
Ph)$nP
Ph)$nOH
CLtSn(pyridineh
CbSn&(pyridineh
ChSnPh(pyridineh
Me)$nF
MC1SnF2
Me lSnS04
Bd~nO
Br6Sn(Et 4Nn
CbSn(Ml'-lN)
CLtSn(Me:JSOh
SnMNN
Na2SnO~
S,3<I
S,
S,
S"'
SrFI
S,ro,
SIS0.
Sr{NOln
SrMoO.
ScRh,O.
Ta4f
T.
T.
T,
T'
T.S
TaS,
TaBrl
TaCh
134.3
134.4
135.3
133.8
133.2
134.3
134.1
133.5
133.0
TaJOj
21.9
21.6
21.6
21.9
26.6
26.1
26.9
27.3
27.8
26.1
KTa04
RhTa04
KiraF J
25.9
25.8
29.4
TaF~
•
VaVe80
VaVe80
WRDM79
CLSW83
CLSW83
CLSW83
NFS82
NFS82
•
VHP.82
MSC73
WRDM79, WaTa80
MSC73
MSC73
MSC73
MSC7J
MSC73
SaRa80, MSC 73,
NFS82, NGDS75
MSC73
NFS82
MSC73
110
Appendix B. Chemical States Tables
QzT..aIl(H!Olt·4HJO
Br6f!'I6CI12XBll.lNh
C4(Tflt,aI1XE\.iNh
25.8
26.3
26.2
Handbook of X-ray Pholoeledron Spectroscopy
8<"'19
8<"'19
BeWa79
TeMNN
T'TeBl)
ChTePl1.,
Bl)TePIQ
hTeAll
49'2.2
48703
486.1
487.1
4855
485.1
486.4
485,5
48603
486.6
487.8
hTeEh
487.'
Ph2TCl
BrircPh
bTePh
!}TeMC1
p-lOIylTeOOH
Br)TeBu
488,5
486.8
488.2
TcC~
TaMNN
To
T""
1674.8
Tb4d
Th
Th,o,
1bO>
146.0
148.7
149.2
Tb3<l
Th
Th,o,
1bO>
Te JdY):
T,
T,
T,
T,
T'
CdT,
GeTe
"""""'1<
1242.0
1241.5
1241.4
513.1
573.0
513.0
5110
m.T
sno3
sn.7
5no3
Nb,T~
'722
S71.
NbT~
5n.8
PbTe
SnTe
VIle,
572.0
sno3
N~Te
Uf.
"'T,
T,"
TeBll
T<O.
T""
T""
5n.9
513.0
'72.9
515.8
576.7
576.9
515.1
576.6
Te(O~
m.l
(NH.hTeC16
(NH.lJTeO.
576,9
576.5
5155
576.8
576.2
576.2
575.4
",no,
NIITe<1
C1JTePh1
BrlTePhl
bTePh)
bTeEi1
Ph1Tez
Bf)TcPIJ
IjTePh
IzTeMC)
p'lolylTcOOll
Br)TeBu
515.3
513.9
576.6
575.8
575.6
576.1
516.6
WaTaSO
•
"....
•
SaRaSO
SaRaBO
SaRaSO
•
T""
Te(OHJr,
(NH.hTtCI6
NalTeO~
486.
486.
486'
NyMa80
SFSn
PVVA.79, WRDM79.
BWtn,BmI75
SNRS76. SWH71
SBSSO
SFS77
SBBSO
SWH71
B"""
Bahl75
SFS77
SFS77
SNRS76
SNRS76
SWH71
BW177
BW[77
BW177
GBPSl, SBRSO
SWH71
BWI71
BW177
SWH71
SWHll
Wa&n15
Th 4h12
Th
Th
ThO,
ThF.
333.2
333.2
334.4
336.5
•
WRDM79
VLDH77
WRDM79
Th 4d!ll
Th
ThO,
Ti 2p
Ti
T""
TI
TI
TI
TiB)
TIN
Toa.
m
T""
TiOJ {anatase. rutile}
BaTrO) (cubic.Idn1.)
CaTIO)
BWm
!'bTrO)
BWI71
BWI77
BWI71
BWI71
SIr""
Chli(CjH.I))
CIT(CVisll
TI(CjH.sXC.h)
67503
6755
454.1
458.8
453.7
453.9
453.9
454.4
m.8
FBWF7'
VlDH77
••
459.2
458.5
458.9
458.6
458.8
457.1
455.8
455.4
ALltP82
LANM81
NSCP74, WRDM79
MECC73
STAB76
MRVgJ
SPB76i
NSCP74, SPB16a.
WRDM19, NGDS75
MWl75
MWI15
MWI7'
MW175
MWI15
GSMJ14
GSMJ14
GSMJ14
419.1
WRDM19
'585
m.l
458.1
BWm
BWm
BWI77
BWI77
BWI17
TI LMM
TI
m
240
WRDM19
BW178
BWl78
BWl78
BWl78
BWl78
BWl78
Wago75
BWI78
aWI78
aWI7S
aW178
aW[78
BW[78
aWl78
aWl78
aW17S
BWt7S
!)erkill-Elmer Corporation
' " Physical Electronics Division
Handbook of X·ray Photoelectron Spectroscopy
TI4I
11
11
111
11B'
m
l1F
TJ,S
TJ,S,
11,0,
ChTI(pyridineh
C~TIiPhPEl')J
111.7
$
111.8
,,8.5
MBNg). WRDM19
MSC73
MSC73
MSC13
MSC13
MSC13
MSC13
MSC13
WaltTI
WallTI
1191
119.0
119.2
118.7
118.7
117.5
118.5
117.9
Appendix 8. Chemical States Tables
V 2p
V
vI»
V
V
V
V
V
v"'
VN
v,o,
yo,
v,o,
Tm4d
1'111
175.4
U4rm
U
U
U,TCl
Iff"
US<
us..
US
US,
U""
UII<,
Ua,
Ua.
Ua,
UF,
UF,
UF,
UF,
uo,
U,o.
U,o.
UO,
UOBr
UOBr,
UOCI
UOCI,
UO!Br
U(hBr,
uo,a,
U<J,/\
U(SCMl
UO!<NOlh ' 6HJO
U(IQC).
UQiAtOh·2H,Q
COUO,
LhUO.
K,UF,
377.3
377.2
J80.1
381.3
380J
379.1
J80.1
379.4
378.4
319.9
$
VRPC74, Chad73, WRDM79
SNRS76
SNRS76
SNRS76
SNRS76
SNRS76
SNRS76
THVl82
THVl82
J783
TB~2
380.2
381.9
380.1
3m
382.7
3816
380.0
381.0
379.9
381.7
380.1
380.4
380.0
380J
380j
38LJ
381.6
3829
381.6
3820
379.7
381.0
380.7
381.4
382'
THVl82
TBVL82
THVl82
TBVL82
Ch>d13
TBVL82
VRPC74, Chad73. MSSS81
Chad73, ChGr72
HoTh79
MSSS81, Chad73, ChOm
TBVL82
TBVL82
TBVL82
TBVL82
TBVL82
THV,",
THv,",
TBVL82,Chad73
a..m
a..m
Ch>d13
Cbod13
a..d13
Ch>d13
PMDS17
VOCh
YOSO.
CsNO.
RbNo.
NaNo.
Li,Va.
Rh.No.
K.V(CN~
V(acach
V(Xaach
aV{CsHsb
V(CsH,),
V(CsH.!XC:lh)
<D
$
$
512.9
5133
LANM81
WROM79, NSCP74
KKLXl
SMKMTI
RoRo76, lFS 73, Fm,75
MECC13
RoRo76, STAB76
aJR78
KKL83
NSLSTI, NSCP74, WRDM79,
NGDS75, NFSB2
LFS73
LFS73
NFS82
NFS82
NFS82
NFS82
NFS82
Vann76
LFS1J
LFS1J
GSM/14
GSMJ74, BCDH73
GSMJ74
472.0
....6
468.0
WRDM79
KKJ.83
KKl.8J
516.4
515.9
516.9
516.9
5173
5175
516.9
513J
514.2
515.1
513.s
VLMM
v
yo,
VI»
W4r
W
W
W
31.4
31.4
31.4
we
we
WS,
WB"
WBr,
Wa.
woo.
wo,
3J.S
32.2
33.2
~3
35.9
~9
Wo,
37.2
32'
l4J
35.1
Wo,
35.1
WI{J~
Ab(WOth
~1
COWO.
H1WOi
H,WOI
35.0
35.3
36.2
36.0
~wo.
Perkin-Elmer Corporation
Phvsical Electronics Division
1121
511.4
512.1
512.3
512.9
513.4
512.4
513.2
514.4
515.7
516.3
517.6
•VHE82
WRDM19, CoRa76, COR 7B.
BiPo73, NSLS77
CoRa16
MSC13
Wagn75
MSC13
MSC13
MSC73
MSC73
CGR78, CoRa76, NgHe76
BiPon
SaRaSO, CoRa76, COR 18.
BiPon, KMH 78
NFS82, NGDS75
BiPon
Nefe82. NFS 82
CGR78
RiPon
NFS82
'"
Appendi, B. Chemical Slates Tables
LiJ:Wo.
N~Wo.
Nac.,WO)
NilQ.1WO,
NiWO.
Rh I WC4
(NH.l6WA·4H;P
K1WC16
Cl j W(EtJPh
CI,snW(COn<CsHs)
Pl"rW(CCh
36.0
36.3
35.8
35.6
35.4
35.6
303
34.'
34.6
HandbOOk of X-ray Pholoeleclron Spectroscopy
NFS S2, MSC 73
Wagn75
BiPo13
lliPo13
NgHe76
NFS82
BiPo73
Lesrn
3>'
LeBrn
WWVV77
31.6
HV""
1.o~,
1.o~
1.01,
ZnBr2
z.a,
z.a,
1.o~
1.o~
1.00
1.00
Zn(""h
(MC4N~r4
z.so.
Xl' Jdy}
Xe in graphite
Xc in Ag
Xc in Au
Xc in Cu
Xc in Fe
Xe in graphile
NoJ<""
669.1
669.6
668.'
669.6
670.2
669.1
674.1
XeMNN
Xc in Fe
Xc in graphilC
Na.X~
544.8
,.."
~
CiHa74
CiHa?4
W3gJl15
WROM79
Wagn17
....
"
WRDM19
1.0
9921
Z"
992.1
99V
989.1
'88.1
C..z..
z.s
ZnI,
Wagn17
V
1>6.0
~
V
VA
LS5.8
156.8
NyMa80
WRDM79, NGDS75
ZnF,
ZnF,
ZoO
ZoO
~
1.00
Zll(acac12
Zn.sil).,(OHh· 2HzO
Vb4d
V"",
1824
1813
182.7
[85.4
Zn ZP3i2
HHL70. KEML74
lPWF7'
HHL70
•
1.0
1.0
Z.
1021.8
1021.9
102\.8
1.0
1021.8
1021.6
GaWi77, KLMP74, MaDu77,
SchoBa, KPML13, K1He83
WRDM79, Wagn7S, SMKM77
VooOT/
lOll.
GaWi77
c..z..
z.s
1021.4
1020.'
1023.1
1022.0
1022.1
1021.7
Gawm, SATon
Wagn75, SATD73
KIHe&3
SAmn
Gawm
Wagn75
Scho73a, WRDM79
GaWi17
Wagn75
EMGK74
Ncfe82
WPHK82
BOFPSI
NFS82
ZnLMM
S41.4
Vb
Vb
Vb
1023.1
1022.2
1022.8
1021.8
10215
NSDU15
NSDlJ/5
aHa?
V3d
242
Wi2OJ(Olih' 2HtO
ZnCrIl.
1.oRh,O.
1020.6
IOW.9
10210
10214
1021.9
lANM81. LKMY13
1.0'0
ZnCb
"'3
989.4
986.2
GaWi17, KlMP74, MaDlIn,
S<:ho73a, KPML73, K1Hc83
WRDM79, Wagn75
Vo.on
GaWi17
Gawm
Wagn75
K1He83
GaWi77
"'"
,.,,,
"",""
988.2
KIHc83
Wagn75
WPHK82
!l88.5
987.7
987.3
S<ho'"
GaWi77
Z,3d
Z,
Z,
Z,
Z,
17&.9
178.8
178.3
118.9
K1JFj' H2O
BrJl40HhCHJCHNHJC
1812
ISB
184.2
1817
184.7
181'
QZJ{OHncthCHNHzC
1810
W,
aF,
Kluf(,
K"'~
if\.
W'
~
NyMa80
NSCP74
WRDM79
SaRa8O, NGDS7S, NS0'74
NKBP73
NKBP13
NKBP73
NKBP73
KNPP74
KNPP74
Perkin-Elmer Corporation
Physical Electronics Division
Appendix C. Chemical States Tables References
N{)/t: ]ht reftrtnus in the Chemical Slalts Tab/es an madt wilh IhfU orfOlU Itltm II'hiclr rtJlTUtni Ihe aulhon' initials. Thru or four capital leQm intiicale
thrte or more authors; alternating upptr· and lowtr-case letlen repreunl two Qu/hort (the letlm art! the ftrSllI«J ltllen of tach last namt): and a CQpilalltltu
followed by three iOWlr ca.ft /tllers indicmis Q single author. The initials QI"l! lal/owed try IWO digits, which represenllhe Iiw two digits of/Ire year of publica/ion.
This mllY be followed by Q small/cller; /0 disringuish betWtflllWa olhefWise idemical reference /lO/lIIio/1.!.
AClrri3
ADPS77
AU1P82
AMFL74
AWI.8(l
AT76
ALn
AnSw74
...."
Aoki76
BACB7S
BAlS76
nBFR71
BCDH7]
BCGlIn
BCGH7J
8(1175
BCII~t72
ReM78
B1H'I'81
BG075
BHIIK7Q
BHUSI
Allen, G.C., Curtis, M.T~ Hooper, AJ., locker. P.M. 1. Oltm. Soc.
Dol/OIl TffUU., 1617 (191]).
AnseI~ R.O~ Didinson., T., Povey. A..F~ Shefwood. f,M.A. J. Ekclmt
Sptarosc. Rdllt. PInom. 11,301 (1977).
Andcnon, C.R.. Lee. R.N., Mc:nr, lE, and M, R.L J. Ibt:.
Ttdrnol.. 10,611 (1982).
Armour. A.W., MitebelJ, P.C.H.. Foikesson. B., l.aruon, R. J. Less
Commoll Mm1.f 36, 361 (1974).
Alzrodl, Y" Wirth, T., Lange, H. f'hys. SrawsSolidi A 62, 531 (1980).
Allen, G.C.. Tucker, P.M./Ilorg. Chim, Acta 16,41 (1976).
Andersson, C.. laruon, R. Om!. SeT. II, 140 (l97n
Anderson, P.R., Swartt, W.E./IlO'f. Chtlll. 13,2293 (1974).
Aoki, A. Jpn. J. Appl. PIrp. IS, )OS (1976).
Asami, K. J. fJtctron SptctTfIIC. Rtlat. P1ItnoIN.. ',469 (1976).
Ballctoft, G.M~ Adams., L CoatsWOrth. LL., BeMewitz, C.D.. BrowJ.,
W., Westwood, WD. Anal. 0-. 47, 586 (1975).
Ballctoft, G.M., Adams, I~ lampe. H., Sham. T.K. J. EJ«lmt
SptcIIOsc. Relal. P/re1llJnl. 9, 191 (1976).
Best, SA, Brant, P., Feltham, R.D., Rauchfuss, T.B., Roondhill, D.M..
Wallon, R,A./norg. Chern. 16, 1977 {1977).
Barber, M.. Connor, J.A.. Derrick, LM.R., Hall. M.B., Hillier, I.H. J,
Chemical Soc., 560 (1973).
Barber, M.. COl\Jla", l.A., Gucst, M.F., .Hall, M.B., Hillier, LN..
Mem!ith, W. DiJaw. Famdtly Soc. 54, 220 (1972).
BaIber, M.. ee-or, lA., Guest. M.F, Hillier, I.H.. Schwan, M~
Stacey, M. J. CAt.. Soc. Fatr¥kq Tmru. /169, 551 (1973).
Birtmll, T., Conmr, JA, Hil!ier, I.H. J. 0ttIIL S«.. DaIIOIl Tnw..,
2003 (1911).
BaIber, M., Connor, J.A~ Hilli~, I.H., Meredith, W.N.E. J. Ekatal
Sp«/IOSC. RdDl. Phenom. I, 110 (1972).
BaJbaray, B., Conlour. J.P., MOIIvier, G. &Iv. Sci. TtChliol. 12, 1294
(1978),
Battistoni, C., Donnann, J.l., flOrnni, D., Paparazzo, E., Yiticoli, S.
Solid Slait COI/lIIIWI. 39, 581 (1981).
Bonrdle, lP.. Grinblot, J., D'Hu)'SSCI, A. J. £ltC/FVfl SptetlOst:. Rtlal.
PUIIOm. 7, 151 (1975).
Bxr, Y., Hcden, P.E, Hedmu, J.. Kbsson, M., Nord1itg. SiqbabI.,
K. Pkp. Sa: 1,55 (1970).
Broclawik, F.. Haber, l, Ungi~, L J. Ph]!. Chtl/l. Solids 42, 2m
sa.
c..
RWI77
BW[78
IlNMN79
RNSA.70
BSRKSI
6TJm
BanislOni, C.. Mattogno. G., Cariati, E, Kaklini, L, Sgame110Ili, A.
Inorg. Chim. Acta 24, 207 (1977).
Bcmdsson, A" Nyholm, R., Mal'1ensson, N., Nilsson, R., Hedman, J.
Phys. Status Solidi (b) 93, K103 (1919),
Blackburn, J.R., NOfdbtTx, C.R., Slevje, F., Albridge. R.G.• Jones,
M.M./II01'8' Chtnl. 9, D74 (1970).
Bl)ide, V.G~ Salka1adlc:n. S.. RaslOgi, A.C., 100, C.N.R., Hegde, M.s.
J. PIrys. D 14, 16(7 (1981).
Bwger, K. Tschismarov. F~ EbeI, H., J. E1taron Spta.1I)J(:. IkIaL
Phtnom. 10,461 (1m).
Perkin-Elmer Corporation
PhYSical Electronics Division
Bahl, M.K. WaIson, Rl.., Irgolic,
KJ~
J. C1Itm.. P#rp. 68,
32n
(191~.
8W]79
RWI80
1bhI, M.K. Watson, R.L, lrgolic, KJ, PItys. Rtv.lLJt. 42, 165 (1979).
Bahl, M.K. WaISOn, Rl.., lrgolic, KJ., J. CIItm. PIIys. 72, 4069
(1980).
8W181
IIWW]76
8aSl7.5
Bahl75
ll=S3
"1lSO
ReWa79
""'I
BiPo73
8,i8\\'80
Rind73
BrFe76
BrFr74
BrMc72
8rWh7S
8uBu74
CAB7]
CBA73
CBR76
cm'MS2
M.K. Watson, R.I.., Irgolic, KJ., cf (seJd-13) WGR, Alla/.
Chem. 51, 466 (1979J,
Bahl, M,K. Woodall, R.o., Walson, R.l., lrgolic, KJ., J, Chem. PhJj.
64,1210{l976).
Barrie. A. Slrtd, FJ.. J. ElwlVfl Stxc/fOSC. RtID/. PhtnOnl- 7, I
B~hl,
(1977).
1bhI, M.K. J. PhJS. O!DL Salim 36, 4&5 (1975).
Ban, n. Appl. 5.1. Sci. 15, I (1983).
8tMnd, P.A. Fk:iJthaUtl", PD., J. \tic. Sci. TtCMoI. 17, 1309, (1980).
Best. S.A~ Walton, RA. 1/101;. Chtm. 18,486 (1979).
Bertrand. P.A., J. \.be. Sd. Ttthnoi. 18,28(1981).
Billien, P., Poll. G.T. J, Cawl.30, 169 (1973).
Bird, R.I., Swift, P. J. Elee/rot! SptClrosC. Relnl. Phtnom. 21, 227
{1980).
Binder, H. Z. Naturfonch. B 28. 256 (1973).
Br3n~ P, Feltham, R.D. J. Orga/101lltlfJl. Chtni. C53,120 (1976).
Brand. P., Fmscr, B. And. CIltIll 46, 1147 (1974).
Brinen. J.S.• trkCIuTe., J.E. AtIaL LttL 5, 737 (19n).
Brainard, W.A., Wbe:der, D.k. J. \be. Sci. TtdutoI.. 15, Illli (1971).
Barga, K., Bum, A. fnatg. Chitrt. Mil, 11,25 (1974).
Out, D.T., Adams, D.B~ Briggs, D. J. Chtm. Soc. ChoIt CommwL.
603 (1971).
Clark, D.T., Briggs, 0 .. Adams, O.B. 1. Chtm. Soc. DoII/lll Trans., 169
(l973).
Chuang, T.1., Brundle, C,R., Rice, D.W. Surf. Sci. 59,413 {1976}.
Capece, EM., Dicaslro, Y.. Futlani, C., Mauogno, G., Fragale, C., Galgano, M., Rossi, M. J. Eltr.1rOfl SptCllOst:. Relal. PhtJ\OlII. 27, !l9
(1981).
COll74
Connor, lA., Dmick, LM.R., Hillier, I.H. 1. Chtm. Soc. FaroOtq
cmm
CELC7'
CarIsoo., TA, Oem. W.B, Nyberg, Gl.. Phyt.. SCJ: 1'- 211 (1917).
0Iat~ J., Elson. C.M~ Leigh, GJ.. Connor, J.A. J. 0It1ll Soc. Dt:l1l0ll
CFRSSO
Clark, D.T., Fok, T., Robens, G.G., Sykes, RW. Thin
Tnvu. fl70,941 (1974).
Tnvu., 1352 (1976).
(1981).
BMCK77
Bah!, M.K. Watson. R.L, lrgolic, KJ., J. Oem. PhJs. 66, 5526
(1977).
CGR78
CKAM12
CKAI\175
CKM71
~id Films 70,
26! (1980).
Colton, R.I., Guzman, A.M., Rabalais, J.w. J. Appl. Pilys. 49,409
(1978).
Clark, D.T., Kilcast. D., Adams, D.B., Musgrave, W.K.R. J. £ltctrotl
Sptc/IOSC. RdD/, Phtnom. 1,232 (1912).
Clark. D.T., Kik:ast. D., A~ 0.8., Musgrave, W.K.R. J. £ltC/ron
Sptctrose.. Rtlal. Phmont. 6, 117 (1975).
Clark. D.T~ Kik:ast, O~ Musgrave, W.K.R. J. ChtJn. Soc. Olta ea.
MIn., 517 (1971}
'"
Appendix C, Chemical States Tables References
CLSW83
CMIIL17
CSC72
CS~'G7?
CWII82
CaLt73
ChGr72
Chlla79
Chad73
Ci~75
Cilla74
Citr73
CIAd?1
CIRi7/)
CITh78
Colle72
CoRa76
OKMB76
DPS7.
DI'S77
DSBG!2
Oalt76
EMGK74
I!:PC75
EI'CC75
EvRtSl
FBWli;4
rCfG71
FEM\'77
FlWW1)
FHR80
nrrn
t'KWJo'77
Ouistie, A,B~ lee, J., SutherlRl, L Walls. J.M. AppI, SIlrf. Sci. 15,
224 (1983),
COllIOOf, J.P~ Moumr, G., Hoogewijs, M., LeClere, C. J. CllkJI, 48,
217 (1977).
Carver, J.e., Schwcitzer, G.K.. Carlsoo, tA. J. ~m. flIp. 57, 973
(1972).
Conlour, J.P., Salcssc, A.. Fromenl. M" Garreau, M" 1'hevenin, J.,
\Varin. D. J. Micro.l'(. SpeCirosc. Eleclroll, 4, 483 (1979).
Carvalho, M., Wiescrman, LE, Hcltulcs, D.M. A/JP/. Sr'eetmsc. 36,
290(1982).
Caben, D~ Lester, 1.E. ~IIL Phyt. 1.Lf/, 18, 109 (1973).
OIadwict, D., Graham. J.. NaJurr (Lom/oo) PhJS. Sri., 237, 127
(1912).
Oladwick, O~ Hzhc:mi, T. Surf. Sd. 89, 649 (1979).
OIadwid. D. Omt Phys. un, 21, 293(1913).
Cimino, A., De Angdis. B.A. J, CuUJi. 36, II (1975).
Ciuin, P.H., Hamann, D.R. Ph,$, Rn. B 10, 4948 (1974).
Citrin, PR, PtlJ$, Rev.. B8, 8 (1973).
Cbrk, D.T., Adams, I. J. Chim. Soc. Chem. CommUIl., 741 (1971).
Clarke, T.A.. Rizkalla, EN. Chem. Pity!. Len. 37, 523 (1976).
Oark, D.T., Thomas. H,R., J. PolJ'lI, Sci.:PoI)'IJl. Chern. Ed.. 16,791
(1978).
Cox, L,E" llcrcu\es, DM. 1. Elee/roll SptClroU. Refar, Pilellolll, I,
193 (1972).
Colton, RJ., Rabalais, J.W./norg. Chem. 15,237 (1976),
Dufour, G., Kamatak, RD., MariO!, J.M., Bonnelle, C. CIrtm. Phy!.
UtI. 42, 433 (1976).
DicUlson, T" Pavey, AF.. Shttwood. P.M.A. J. Oem. Soc, F(lroJoy
Tnl/ll, I 686 (1976),
Dickins!». T~ Pavey. AF., ShQwood. PM.A. J. Otm.. Soc. F./TJIJay
Trruu. 173, 332 (1m),
Dharmadhitlri, V5., Sainkar, S.R~ Badrinarayan, S., Goswani, A. J.
FlUfrQI/ Spec/rr»c. Relot. PIrt/lOlJl. 25, 181 (1982).
Dale, AJ. PIrospliofllS 6, 81 (1976).
EscKd, J., Mavel, G., Guerthai$, lE., Kergoal, R. Inorg. Chtm. q,
695 (1974).
Escard, J., POl1l~ianne, B" Contour, J.P. 1. Eltc/ron Sptc/rosc. Re/QI.
Phellom.6, 17 (1975).
&card, J., Ponl~ianne, B., Chenel»ux, M.T., Cosyns, J. Bull. Chim.
Soc, Fr.. 2400 (1975).
Eve.rlIart, D,S., Reilley, C.N. Surf. /II/eif«t Anal. 3, 258 (1981).
Fuggle, lC" Burr, A,E, WillSOn, Ut, Fabian, OJ~ Lang, W. J. Phys.
F4,335{l974).
Foraine, R.. CaiI1al, R" Feve, L, Gttillel, MJ. 1. Fkctrorr Sp«/rt)JC,
RehJJ, Pite-. 10,349 (1977).
Fisher, UB.. Erikson, N.£., Madey, T,E., Yates, J.T. SMrf. Sci. 65, 210
(1971).
Friedman, R.M., HlIdis, J., Perlman, ML, WalloOn, R.E. Pity!. RtI'. B
8, 2434 (1913),
Fukuda, Y., Honda, F" Rabalais, J.w. SIlrf. Sci. 93, 335 (1980).
Freeland, n.H., Habeeb, J.J., Tuck, D.G. Can. J, Chem. 55, 1528
(1971).
Fugglc, J.e., Kallnc, E, Watson, LM., Pabian, DJ. P/iys. Rtl'. 816,
750(1917).
n.
Handbook
FMUK77
n"FA75
FWUI\t79
FaBa79
FI\\'t75
FoLa82
.'olk7J
FrSa75
.'ugg77
GBMP79
GBPSI
GCII76
GGM82
GG"L79
GHlIL70
GMD79
GPDG79
GS~U74
GZF'73
GaWi77
GIWa79
GrUe71
GrMa75
HAS7S
HBBKn
Fnmcn, H.F.. Merrict, J., UnQlla, M~ Khan. A.S., Ptleoon. D.T.. McCreary, lR., Thorn, RJ. J. EkcffOll Spearmc. /Mol. PItmOlfL 11,439
(1977).
Folkcssoo. B" SUI'Idberg, P.. Johal15:SOll, L, UB.'iOlI, R. J. EkCIIUII
s,leCrrosc. Rdm. P~/IWI, 32, 248 (1983).
Fuggle. le., Watron, L.M., Fabian, OJ., Affrm.llI1an, S, 1. Phys. f 5,
375 (l975).
Fi~cher, A,B., Wrighlon, M.S.. Umana, M.. Murruy, R.W. J. 11m. Chew.
So<'. 101,3442 (1979).
Fahey, D.R.,Baldwin, BA Illorg. Chim. Atla 36, 269 (1979).
I~uei, E.., Weber, D. ZAIII''I'. A.II~. Ole/ll. 412, 47 (1975).
Folkes5on. B., Larsson, R, 1. £1«1"", Spearwr. Rela/. ~'IOIr1. 26.
157 (1982).
Folkesson, B. Ado C1lol &wid. n, 287 (1973~
Fr.wtn; H.F., Slwauty, G. J. Solid $iDle c.v.. IS, 229 (1975).
Fugzle. lC Surf. Sci 69, 581 (Im~
Grimblol, J.. BoMdle, J.P., MOl1JtUl, A., Ptti~ E InOf!. Chilll A.cto
34,29(1979).
GaTbassi, E, Ban, J.CJ" Pelrini, G. J. Elec/f[IfI SptCfImC, Re/o/.
Plrenom. 22, 95 (1981).
Gmy, R.C., Carvtr, le., flcrcules, O.M, 1. file/fOIl Spewosc. Rl/m.
Phenom. 8, 343 (1976),
Gl1Inlhancr, PJ., Gnmlhancr, 1'.1., Madhubr, A. 1. ~IC. Sd., T~chn(/I.
20,680(1982).
Gl1Inthaoer. FJ., Grunlhanef, PJ" Vasquez, R.P., Lewil, B.F.. Maser,
jian. J., Madhukar. A,J, Inc. Sci. Tedmol. 16,1443 (1919).
Gelius. U., Heden, P.E, Hedman, 1.. UIllberJ, BJ., MaJtDe, R.,
Nordberg. R~ Nord6ng. C., Siegbahn. K. PhJS. Scr. 2, 70 (1970).
Glu:h, R., Mueller·Warmu1h, W., lXIlZ, I-t J. NOIt-Crpl. Solids 34.
127 (1979).
Gajri>, p.. PiI'lllU:, 0" Defosse, L Gfmge, P., Delmon. g, J. Ekarotl
Sp«/rose. RtlDI. P/ttnorrI. 17. 121 (1979).
Groenenboom, CJ.. Sawatzky, G., Meijer, HJ.D" Jeltmet, E 1. Or16_101. OrI'llL C4,16 (1974).
GrulSCh, P.A., Zeller, M.V., Fehlner, T.P./norg. Chem, 12, 1432 (1973).
Gaarenstroom, S.W., Winogf.ld. N. J. Chern. PIr)'s. 67, 3500 (1977).
Glicksman, H.D.. Wallon, R.A. hlorg. Chim Acro 33, 255 (1979).
Gray, R.C., Hercules, D.M./llorg. Chem. 16. 1426 (1977).
Grim, S.o., Matienzo, W, 1110'1'. Chem. 14,1014 (1975),
Halder, H.C~ Alonso, J., Swartz, W.E.., Z Nnlur!orsch A 30, 1485
(1975).
Hedman. J~ Bzr, Y., BemdtSSOll, A.. Klmon, M" Leonhardt, G"
NiISSCll, R" NonllillJ, C J. EJec/roll SpecuoSC, He/Ill. PMnom. I. 101
(1m).
HFV77
HOO&ewijs, R., Rennans. L. Venrit, 1 J. fleclron Spec/rose. Relnt.
PIJ«Jnt 11, 171 (1m).
HGW75
UIID081
HUJ69
UIlj70
HlIL70
244
or X-ray Photoelectron Spectroscopy
Hammond, J.5., Ga¥enstroom, S,W., v,'1~, N. AIIII1. Chem. 47,
2194 (1975).
Hammond, J.S" HoIubta. lW" De~rics. J.E.., Duekie, R.A. CO/7US.
Sri. 21, 239(1981).
HeOOricksoo. D.N., Hollandef, 1M., Jolly. W.L. hIOTt:. Chem. 8,2642
(1%9).
Hcoorickwn, I).N" Hollander, J.M" lolly, W.L: IJJo'S, Chem. 9, 612
(l970).
HagslfOrn, S.B.M.. Heden. P.O., Lofgren, Ii. Solid Stale COlllmurl. 8.
1245 (1970).
Perkin-Elmer Corporation
Physical Electronics Division
Appen~ix C, Chemical States Tables References
Handbook of X-ray Photoelectron Spectroscopy
IUGlI'70
IIKMI'74
IlMUZ78
IINUW78a
IINUW78
USBS8\
IISU76
HUGII79
t1VV79
IIWVV14
IbSh73
IIIW.74
lIawm
IIcMa80
HC1:d82
HoTh79
i1oThSO
IIuBa74
lIKK76
IKIM73
IMNN79
11'182
hlYa81
JUlIK73
KBAM72
KBAW74
KBIIN74
KDRn
KEI\lL74
KGW14
KGW16
Hanni•. K.. JoharMoo. G., Gcliu5, U" NooIling. Co, Siegbahn, K.
Ph)'S. Ser. 1,277 (I970).
I~ollillger. G,. Kumurdjian. II.. Macl:owski. J.M., Pel1osa, P., Porte, L.,
Due, Tr.1I1 Minh J. fMc/mil S/IWrII.IC. NellII. Phcllilm. S, 237 (1974).
Haber, J.. Machcj. T., Ungier. L" Ziolkowski. J. J. Solid Sialt Chem.
25,207 (1978).
Haycod:.. D.F_ Nicholls. CJ" Urch. D.S" Webber. MJ., WItCh, G. J.
a-. Soc. DoIIOR TroRS.• 1791 (1978~
Haycod:.. D.E., Nicholls. CL Urth. D.S~ Webber, MJ.. WICCh, G. J.
Otnt.5«. DoIIOl/l TI1IIlS.• 178S (1978~
Hegde, R.I.. Sainkar. S.R... BDinarayanan. S~ Sinha, A.P.B. J.
EIre/ron Sp«trosr. Rtfal. Pt-Im. lA, 19 (1981).
Haber, J., Sloch. J., Ungier, Ih J. fl«lfQlr Sp«fnnt:. Rt/al. Pht'I(Jffl. 9.
459 (1976).
Haycock, 0 .. Ufth, D.S., Garner, C.D" Hillier. I.B. J. E/etlrtlll
SpeelrrJJ'c. Re/II/. PheIUJl!l. 17,345 (1979).
~10S1e, S.. Van De \bode!. D.E. Van Der Kelen, G.P. J. Elrelron
SpecI1l1SC. Relol. P/tenmr. 17, 191 (1979).
HosIe. S., WHitman, iI., Van Dc 'lbndcl. 0" Villi Del" Kelen. G. P. J.
E1tclron Sp«trosc. Rdal. PherIoM. S, 227 (1974~
!-bRO". H~ Sherwood, P.M.A. Phil Mal. n, 1241 (1973).
Hamer. A.D.. Wa~(lQ. R.A. Itr«f. ChtM. 13. 1446 (1914).
Hamroood, lS., W"lIlograd, N. J. Elfflrodltnt EltctroontJl. C1ltlll 78,
55 (1977).
Hedman, J., Mal1~nlson, N. Phys. Ser. 22,176 (19&0).
Hegde. RJ. Sljif/merfuce Anal. 4,205 (1982).
Ilowng, W,Y" Thorn, RJ. Chtlil. PhyJ. UII. 62. 51 (1979).
Howiig. w,Y.. Thorn, RJ. J. Chern. Ph]s. Solids 41. 75 (1980).
Hughes. W.B" Baldwin, BAlllorg. Chem. 13, 1531 (1974).
IkeR'll:nl. I.• IshiL K_ Kinoshita, S~ K.... H.. Franco. M.A.A.,
1bomas.. l, J. SoIitI S,alt C1wrI. 17,425 (1976).
Ihara. H., Kumashiro. Y.. hob, A.. Maeda, K. JptIt. J. Appl. Ph,s.. 12,
1462 (1973).
Iwasaki. H" Mioowa, Y., NishilJlli, R., Nakamura, S. SIlif. Sci. 86,
811 (1979),
lwaktrO, H., Tatsuyama, C., lchimuR, S. lpn. J. App/. Phys. 21, 94
(1982),
Inoue, Y., Yasumori, I. Bull. Chew. Soc. lpn. 54, 1505 (1981).
JohansJOn. G" Hedman, J., BemdlMOll. A., Klasson, M" Nilsson, R. J.
£ltc/ron s,mtrtnt:. Relal. PhellOfll. 2. 295 (1913).
Kum:.-. G., Blackburn. l.R.. Albidge. R.G., Moddeman, w.E., Jones,
M.M.mOfl. C1ltIII. 11,296(1972).
Kim, K.S~ Baitingcr, WE., Amy, J.W.. Winop;nd. N. J. E1«trorI
Spmnm. Rdill. P/te/lO/ll. 5, m (1974).
KIasson, M" Bcmltsson, A" Hedm:lll, l., Nilsson, R.. Nyholm, R..
Nordling, C. J. Eltctron Sp«/rosc. Relal. Phnwm.. 3, 427 (1974).
Krishnan. N.G" Delgass, W.N" Robertsoo, W.O. J. Phys. F 7, 2623
(1971).
Kowalczyk, 5.1'., Edelstein, N.. McFeely, ER., Ley, L" Shirley, D.A.
Chelll. Ph]s. Lell. 29. 491 (1914).
Kim, K.S" G<mmann, A.E, Winogmd, N. AnaL CIrelli. 46, 191 (1914),
Kim. K.S., <Aarenstroom, S.W.. Winogl1ld, N. Chtllt. Phys. LttL 41.
503(1976).
I<.aunaV.L LL. IrebA1, PJ.. ShekIon, P., Oau. T.L. Om. SS., till,
C. J. \be. Sci. TtellrtoL 17, 1061 (1980).
Perkin·Elmer Corporation
Physical Electronics Division
KJIDSI
KKL83
KLI\I1'73
KLMP'14
KAUl78
KN1"iIl68
KNPI'74
KOK83
KOW73
KPML73
KSPB76
KnVl'76
KWDlI
KaFJ79
KiIk13
KiWi?3
KiWi14
KiWi7S
Kim1S
K1Ut83
KoNaSO
UK77
LANM81
L8HK73
1.8NN78
LDDB80
LFBC80
1.FS73
LFWS79
LllJG70
LKI\I1'73
I},IFSO
LMKj75
Kl1J'I\CI"Sk~ LL, lam;oom, 0., Ireland. PJ.. Deb, S.K., Mickelsen,
R.A., Olen, W.J. \tic. Sci" Ttchnol. 19,467 (1981).
Kasperkiewicz, l., Kovacich, lA., Lichlman, D. J. £Itc/ron S/)tClm.w:.
/(e/m. PllelUHII. 32, 128 (1983).
Kowalclyk, S.P., Ley, L., McFeely, ER" Pollak. R.A" Shirley, D.A.
Plr'$. Rt\'. B 8. 3583 (1973).
KOWl1Iczyt, S.P., Ley, L, McFttly, FR. Pollak, R.A.. Shirley, D.A.
Plfp. ReP. 8 9. 381 (1974).
Kc:r\:IIlf, F.PJ~ Moulijll, lA_ Hems. A. J. f1tc/nJII ¥tc/fllSC. Rt/aL
PIIm•. 14,453 (1978).
KJrl'lSllll, S.E., Norilcfg, C.H., NiisSOll. 0.. Iklgber:. S~ I:1-Fanuh.
A.H., Nordling. C~ Siegbalm, K, Art;, Fur fyslt 38, 349 (1968),
KlutilOrlova, L.C., Nefedol', V.I.. Pankl'll101'l, LN.. Pershin, V.L ZJr.
NtlNg. Khim. 19. 860 (1974).
Kohiki, 5., Ohmum, T" Kusao. K. J. 1:1telrrJII S/Icclrose, Relm.
I'lltIll'»11. 31. 85 (1983).
Kim, K.S., O'leary, TJ., WinogT3d. N. Allal. Chelll. 45, 2214 (1973).
Kowalczyk, S.P., Potbk, R.A.. McFttly, F.R, Ley, L, Shirley, O.A.
Pityr. Rt\'. 88,2387 (1973).
KapI,*,v, M.G" Sbulp. Y.M~ PokIm1ya. K.I.. Borodko. Y.G. PIIys.
SId. Solidi 73. 336(1916~
KlllOrDUJ'2, F.. TllffiIIJ'I, T~ Waambe, I., Yokoyama. Y~ Ikeda. S. Bull.
Chern. Soc. lp". 49, 3544 (1916).
Kim, K.S~ WiIlOglld, N., Dal'i5, R.E. J. A/II, CIrtnt Soc. 93, 6296
(1911).
Kalrib, A., EI·Egaby, M.S./!lQrg. Chim. Aela 36, IA05 (1979).
Kishi, K.. lkeda, S. 8ull, Chern. Soc. JpII. 46. 341 (1973).
Kim. K.S., Winograd, N. Chern. Ph)'J. U/I. 19,209 (1973).
Kim, KS" Winogl'ld, N. J. Catal. 35, 66 (1974).
Kill, KS" Wmog11d, N. C1lea. PIt)'J. UII. 30, 91 (1m).
Kim, K.S. PIr,s.. /In. B 11,2177 (1975).
Klein.lc.. Hcfmes, D.M. J. CaJOl. 82.424 (1983).
KQlIoo, H., Na&ayama. M. J. EItct"", ~ Rtlal. PhoIont. 18,
341 (1980).
Lin, A.W.C~ Armsll'Ol'lg. N.R... Kuwana, T. AmJl. Chern. 49, 1228
(1977).
Lebugle, A., AxclSSQll, 0., Nyholm, R., Mal1enssOll, N, PhyJ. Ser. 23,
825 (1981).
Leoohard~ G., BemdlSSOIl, A. Hedman, J., Klasson, M., Nilsson, R
Php. S/allU Solidi (b) 60, 241 (1913).
Lindberg, B., Bcmdl$SOfl, A., Nil\m, R., N)tlolm, R, Exner, O. ACID
a-. Samd. A 32, 353 (1918).
I....efttoJrs, B~ Duerr, J~ D'Hui$SCI, A., Boanelle, J.P., I..cugIet, M.
Phys. Statu Solidi A 'I, KI75 (1980).
Lassct, R., FUf.8Ie, le., 8eyss, M., Campaglll, M~ Steglict, F., Hut·
liger, F. Ph}'slCO 102B, 360 (1980).
l..amoo, R., FoIkcsson, B" Sdloen, G. ehem. Ser. 3, 88 (1973).
Lorenz, p" Finsler, J., Wendt, G., Salyn, J.Y., Zumadilov, E.K.,
Nerwov, Y. J. flee/ron Sptc/rose. Re/m. Pht/lom, 16.267 (1979),
Lindberg. Bl., Hamrin, K., Johansson, G., GeHus, V., Fahlm:mn, A.,
Nordling, c., SiegbMIO, K. Phys. Scr. 1,286 (1970).
Ley, L. Kowalczyk, S.P., Mcfeely, ER., Pollak, R.A.• Shirley, D.A.
PIIF. RI!Y. 88.2392 (1973).
UrssoD.. R, MaJet., A.. Fdkesson, B. CheJIl. Scr. 16, -47 (\980).
Ley, L. McFeely, F.R, Kowalczyk. S.P~ JmkiD, J.G., Sbirie)', D.A.
PltYf. RI!I'. B 11, (4) (1975).
245
Appendix C, Chemical States Tables Rererences
LPGC71
LPMK74
I,PWJOi5
l,alio76
LaKe76
1.e-1Ir72
l.eRa71
lD:bu, I.. P'ianella. P., Gamer, c.M~ Chye. P.E.. Grqory, P.£., Spicer.
w.E. Surf. Sci 6.1. 45 (lm~
Ley, 1.., PoilU. R.A., McFeely, F.R., Kowalczyk, S.P., Shirley, D.A.
Plrp. Rtf. IJ 9. 600 (1974).
Lang, W.C., Paclalia, B.O.. W3ts0n. L.M., Fabian. OJ. J. F.ltclrm
SptClr(J!C. Ndllt. PhenQIII. 7, 351 (1915).
urswt, R.. Folkesson, n, Chelli. Sa 9,148 (1976).
Lwicllc, L" Kessler, H. J, E/ecrroll Spec/rose, Reill/. l'i1ellolll, lI, 95
(1976),
Larkins, EP.. Lubenfeld, A. J. Eiec/I'Drr Spec/rof(;. Relat. I'ilellom, IS,
m (1919).
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(Im~
liHe7S
limoSl
UMa7'
MUN80
MEcca
MIN8l
MlNN78
MKI.P73
MMRC72
MNfB70
MRV83
I.indbet& BJ~ Hedman, 1 a-. Sa: "
155 (1975).
L..imouzill·Maire, Y. &dl. Sir. Olin. Fr. I, 340 (l98I~
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c..
Handbook or X-ray Photoelectron Spech'OsCOI»)'
lIIWLF78
NBK14
NBM073
Nli'S82
NGIlS75
NIMN78
NIS72
NKBP73
NMsm
NNBF68
NP!lS14
NSllN11
NSCP74
NSDU15
NSlS77
NSMS79
(19831.
MSAV7l
1115(;3
1I15S581
MSV73
MSV79
MTHB71
MVS7J
MWI75
MaDu17
l'ola\\'075
McC07S
McGi82
Me"I?6
McWe76
MeZe77
i\'loVa73
246
Morgan, W.E., SICC, WJ., A1bridIC, R.o.., Van Wurx, lR. Itlorg.
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NSWi\lSO
NSWU77
NZB78
NZKn
NeB372
NeSa1.
Nefe18
Nefefl2
NgHe76
NyMa80
OCl179
ml115
OU'fi9
OVK14
Moses. P.R.. Wxr, L.M., \..eD1I(U, J.C.. Finklea,
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Perkin-Elmer Corporation
(J) Physical
Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
OkUi76
I'CU176
PEl82
l'm73
I'KIIL80
PKW73
PKIS1l
PWL73
1'1\10577
PRCV77
PVVA79
PWA"
PeKa77
PiLun
RlJOn
RGRHSO
RHJF69
RN$73
RRD78
RSKC82
Rigg72
Ri\'t83
RoRo76
SATD73
SB1l80
SCKK75
501077
SORSO
s>-sn
SGC'1i4
Oku, M., Hirokawa, K. J. E1ec/TOII SfJ«/TOse. Relm. Phenom. S, 475
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l)erkin·Elmer Corporation
Ifhysical Electronics Division
z..
Appendix C. Chemical States Tables References
SGRS72
Shanna, J., Gora, T., Rimstidt, W .. Slaley, R. Chelll. l'It]s' UII. IS,
(1972).
Siegbahn, K., GeliUS, U., Siegbahn. H.. Olson, E. Phys. Scr. I, 272
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SGSQ70
(19m).
SMAV72
~
WJ.• MOI!an. W.E., Abid"ee, R.G~ Van Wazo:, J.R. Inorr.
ClItIIL 11,220 (1972).
5MBM76
SMKMn
SNMK78
SPB76
SPB76a
SRD79
SRII72
Svensson. S~ Martensson, N., Basilicr, E.. Malm:rvist, P.A.~ Gclius, U..
SiegbaM. K. J. EltCI1(H1 SptcllUSC. Rtla/. Phmom. 9, ~I (1916).
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(1m).
SRIIII78
SSEW79
SSIlU83
SSOTSI
STA74
STAB76
SW1l71
SZNS77
$aRa80
5<&81
S<Oo81
5&82
". "
Scho7J
Scho71a
Scho73b
"1\76
Shlq78
ShRt79
SbTr75
Shcr76
SiLe78
Steiner, P., Reiter, FJ., lloeehst, H~ Hlltfner, S., Fuggle. l.C. PIrp.
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Srinivasan, V~ StiefJd, E.I., E1sbelTy, A., Wthon, RA J. AnI. Chta.
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Sherwood, P.M.A. J. Chenl. Sot, Fllmday Trons.1f 72, 1806 (1976).
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eor-n.
m
m
247
Appendix C. Chemical States Tables References
Sinharoy, 5" Wolfe, AL J. £1«I'On 5,>«:I'O$C:. Relnt. PI/ellOlII. 18,
369 (1980).
Smith. TJ., Walton, RA 1./uorg. Huc/. (Mm. 39, 133J (19n).
SnlWa77
Srinivasan, R., Walloo. R.A. /lJOrg. Chilli. Acto 25. L85 (1977).
SrWan
SleYen5, G.t.. EdIlIOlIds. T. J. Colol. 31, 544 (J975).
Stli:d75
51eiMf, P.. HCleCf$, H. Z
B 15. 51 (1979).
SIHo79
Swau. W.E., AlfOllSO, R.A. J. B«lroII SpcodlVJf. RLIaJ. PhDloa 4.
SwA174
351 (I974).
Swartz, W.E., IJcltUles, D.M. AINlI. eMIII. 43. 1714 (I97n
511'Ht71
Swifl, P. Surf Iw1ue:t! Anal. 4, 47 (1982).
Sll'if82
TI11JI1WS, V.P., Beycr, L.. Hennig, K., Hoyer, E., Nefcdov. v.I..
TIIIIII77
Zumadilov, E.K. Z Allorg. Mig. ChclIl. 437, 299 (1977).
ThilaUl, E., Bo,uiqut, 1., VerbiSl, JJ.• leveL 1.e.. Noel. Ii. J. Alii.
T8VL82
Chmt. .sox. I~, 5266(19R2).
1luna, J.M. Albms, L WiUiarns. R.H~ Ba'btt, M. 1. Chmt. $«.
l1WB72
Farodtry TIUnJ. If 68. 755 (1972~
Taylor. lA., LaIaSICf, G.M., Ibbalais, lW. J. £ltc/rat Sp«IrOSf.
TLR78
Rd(l/. ,btllOf,l. 13,435 (1978~
Turner, NJi.. Murda~, 1.5.• Ramaker, D,E. Allal. Olcm. 52. 84 (1980).
TMR80
TRI,K73
Tolman. CA, Riggs, w'M" Linn, w.J., King. C.M., Wcndt, R.C.
//lorg. Cbem. 12. 2772{l973).
TtQltI-NoeI, c.. Vemisl, J., Bogillon, Y. J. MiaolC. Sp«/ffllC.
TVG76
EkrfCffl,255(1976l.
Taylor, J.A.. Rabmis.. 1.W. J. the.. /'Irfi. 15, 1735 (1981).
TaRaSI
Taykx, lA. AppI. Surf. Sci. 1. 168 (1981).
rayt81
Taylor, lA. 1. \be. Sci. Technd. 20, 151 (1982).
"'~8l
Thomas, JR, Shanna, S.P. J. \be. Sci. Tedllrd. 15. 1707 (1978).
ThSh78
Tricker, MJ. /norg. Chelll. 13.743 (1974).
1'rie14
Ueno, T., Odajima, A.l/1l1. J. Appl. Pbys. 20, L501 (1981).
UeOd81
UtQd82
Ueno, T.. Odajiml, A. Jpn. J. Appl. Pbl'S. 21.230 (1982).
Umczawa, Y, Reilley, CN. AlJ(Jj. Clwrt. SO, 1294 (1978).
UmRe78
VHES2
¥aD Der Veen. l.F. Himpsd, FJ~ Easurwt, DE. Ph]S. R~. B 25. 7388
(1982).
VLDJln
Veal, B.W.. Lan, DJ~ DiamoDd. H.• HotbUl, H.R.1'tIys. Rn'. B IS,
2929 (19m.
VRP(;74
Verbis!. J.. Rip. J~ PirelU~. JJ., Caooano. R. J. Electron SptCl/we.
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VVSW77
Van De Voodel, D.P., Van DeT Kelen, G.P., Schmidbaur, H" Wollebtn,
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VWIIS81
Van Der lIan, G~ WCSli1.,
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Vann76
Vayr81
Vayrynen. l. 1. Eleelroo Spec:,IWf:. Re/lI1. Pherwm. 22, 27 (19BI).
WHMC78 Willbe:rg. T.N~ Hocnigman. J.R., Moddemall, W.E., ilihcm, C.R.,
QlIeU, M.R. J. \OC Sci. T«/moL 15. 348 (1918).
WPl1K82
Wagner. CD.. Passoja, DE, Hillery, H1'~ Kinisky, T.G.. Six. H.A~
J-.sert, W.T.• TaYD_ lA. J. Ibc-. Sci. TtehtoL 21, 933 (19S2~
5iWoSO
' 'JJ.
c..
248
Handbook of X-ray Photoelectron
WRlJM79
WSI'77
WVV1'J
WagnCf, CD., Riggs, W.M.. OJV~. LE., Moulder, lE, Mullcnbcrg,
G.E. 1/IIIIdbol!k of X.my I'lw/odeclron SpWI"OUO/l)'. Perkin-E1mcr
COfpOf3liOll, l'bysicaJ EI('.C\ronic.~ Divisioo, Eden Prairie, MN 55344
(19791.
Wcser, U~ Sokolowsti, G.. PiJz. w. J. El«lroo Sprorosc:. Nt/al.
PIImt.. 10. 429 (911).
Wil\emen, H., Van IX '*-del. D.F.. Viln Ocr Kdc:n. G.P. /"'/fl. C1Ii...
Acta 34.
WW(.iS
WWVY77
WZR80
WaTaSO
WaTa82
Wagn75
Wagn77
Wagn1S
W"""
w.lm
WtAn80
WeMt78
YMK7B
YNAB77
YI\'NA14
YNNAn
YYS78
Y\'S79
Spectroscop~'
m (1919).
Wcrlhtirn. G.K.. Wernick. lH., Cltttlius. G. Pltp. R~. B 18. B78
(1978).
WillcmCll. H.. WU~l~, LE, Van Dc Voodcl, D.P., Van Der Kclcn. G.I'.
J. EI«/1'O/1 Sp«/IWf:. Re/lIl. PhC/J()III, 11.245 (1977).
Wagner. C.D.• Zalko, D.A., Ra)'mood, R.l1. AI/Ill. CheRl. 52, 1445
(1980).
Wqner, (;.D.. Taylor. J.A. J. £ltc/1TJfI Spfflrosc. Rdal. Ph~ 2lJ.
83 (1980~
Wagner. CD., Taylor. lA. J. £ltc/1TJfI Sp«11WC. Rt/ul. Phnrum. 28,
211 (19&2).
Wagroer. CO. Di.'lc:llS.t Faraday Soc. 60, 291 (1975).
Wagner, CO. Chapler ? in Ilmlilbook of X.m)' and UI/f(!I'iol~/
PholOcltelrlJ/l SptcIIWf:OPY. Ed. Briggs, Heyden and Sons, Loodoo
(1971).
WJgner, CD. J. \be.. &1'. T«Iw>I. 15.518 (l978).
Wagner, CD. J. fltcJff7l Sp«1I'OJC. Rtim. Phmoa 18,345 (1980).
Wahoa. ElA. J. 11IOf'g. Nud. CltlIL 39, S49 (1m).
\lkightman, P.• AndleW$., P.T. J. Ptr/t. C IJ, LJ15, L821 (1980).
Westerhof, A.. Meijer, HJ.D. 1. O'rQllometal. Chen!. 144,61 (1978).
Yamashila, M" MalSulnoIo. N., Kida, S./1I0rg. Chim. ACia 31, LlBI
(1978).
Yatsimirskii, KB., Nemoshalcnko, V.V., Aleshin, V.G., Bratushko, Y.I.,
Moiscenko, E.P. C1ltm. P/rys. Ull. 52. 48 I (1977).
YatsimUskii, K.a~ NemoshaJcnko, V.V~ Naz.arent.o. Y.P., Aleshin,
V.G, Zhilinsbya. V.V., TaideJio. Y.D. DoH Abd. Nauk SSSR (Ph]f.
0-..)211.835(197-4).
Yatsimirskii, K.8. NemoshaIenko, v.v~ Naz.arent.o, Y.P.• Aleshill.
V.G.. Zhilinsbya, V.V.. Tomashevsky, N.A. J. EI«11TJfI Sp«froSf.
Re/ol. PlreIlOIll. 10,239 (1977).
Yoshida. T.• Y~masaki, K., Sawada, S. Bull, Chem. SM. JWI. 51, 1561
(1978).
Yoshida, T., Yamasaki, K. Sawada, S. Bull. 0rCII. Soc. JjJfI. 52,291ll
(1979).
y,"",
YoSt1.
YoYa81
Yosh78
YoshBO
ZSQS79
leHa?1
ZiHt1S
Yang. SJ~ BaleS, C. w. Appl. PIrys.. Lett. 36, 675 (198O).
Yoshida, T.. S3wab., S. B/Ii/. a-. Soc. Jpn. 47, SO (I914).
Yoshida, T., Yamasaki, K. Bull. Oem. Soc. JfJII. 54, 935 (1981).
Yoshida, T. Bull. Q(III. Soc. Jpll. 51, 3257 (1978).
Yoshida, T. Bull. Chem. Soc. Jpn. 53, 498 (1980).
Zhdan, P,A., Shepelin, A.P., OsiflOva, ZoG., Sokolovskii. V.D. 1. Caw/.
58.8(1979).
zeller, M.Y., Hayes. R.G. CMm. Phys. Len. 10,610 {197ll.
Zingg. DS., Hcl'tUles, D.M. J. Phys. a-. 82, 1992 (1978).
Perkin-Elmer Corporation
Physical Electronics t;>ivision
Handbook of X-ray Pbotoelectron Sptctl1lSC<lpy
Appendix C. Chemical States Tables Rererences
Acknowledgment: Perkin-Elmer Corporation, Physical Electronics Division (PHI). acknowledges Dr. Charles Wagners conlributions 10 the Chemical States Tables. The entries in Ihe tables, used with his permission, were compiled by Dr. Wagner in
collaboration with PHI.
Perkin-Elmer Corporation
Physical Electronics Division
?An
Appendix D.Valence Band Spectra
III sOllie castS, lilt chemical shifts oburvtd ill core level XPS are IlOl su!ficiCIII /(I idell/if! the surface chemisrry af a pafticular S(llIIple. /lIllie case of XPS aml/y.fi,1 oj polymers. the
c1lallges in carbOlI chetnisrry may be quill sllblle ill core level XPS or the chemical shifls may /)( Dilly (/ secondary or tertiary effect. Willi Ihe mu/ille list ofmonochromators ill XPS
and the high tounring rates made possible by currem s/ltcrrometer technologies. ill/lilY onolysls use valence btJnds for ide/ilificOlioli oj lIIa/uials. In mmlY CClses. Ihe )!(lie/Ice /)(mds
me used lIS fingerfl'im.> for II sample or a slHface treatment, mlker limn/or identifying .specific molewlar orbitals, Theflngerprin'ts of/he role/lCt /Ill/Ills may II'CII be used 10 aid in
001" tl,e identificatioll of polymers olld the qilalllificalioll of polymer mi~l!Ift$ by 1I,ling methods such as linear leas/ squores filling. The following i£ a smoll campi/a/jar, 0/ valence
band spectra ofargauic and inorganic ma/erial.! /0 iIIuslmte ti,e u/ility a/villella band dow.
Poly(methy/methacrylate)
/'oly(ethylelle)
-5
35
35
Binding Energy (eV)
Binding Energy (eV)
Poly(isobutyl methacry/ate)
Poly(eiher ether ketO/ie)
-5
35
Binding Energy (eV)
Po/y(phenylmt) sulfide
Binding Energy (eV)
250
f'o/y(n-bmy/ methacry/ote)
·5
35
-5
35
Binding Energy (eV)
-5
35
Binding Energy (eV)
Pcrkin~Elmer Corporation
Physical Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
Appendix D. Valence Band Spectra
Poiy(propyltnt)
(\
COfOnO-!ftottd
Pofy(propylent)
1\
t'\
f\
~-
\
35
\
-5
35
Bildn! Eacrgy (tV)
-5
Binding Energy (tV)
Nael
M~
\
35
-5
Binding Energy (eV)
~\
35
F(ZOJ (lremulitt}
35
FtJ04 (magnetite)
-5
Bindin& Energy (tV)
Perkin-Elmer Corporation
Physical Electronics Division
-5
Binding Energy (eV)
35
-5
Blndinx Enc:tu (eV)
HI
Appendix E. Atomic Sensitivity Factors for X-ray Sources at 90'
This lobLe is based upon empirical peak area lIalues* corrected for the system s rrallSmission function. The values are only valid for and
should only be applied when the electron energy analyzer used has the transmission characteristics of the spherical CalJaci/or type
analyzer equipped with an Olnn; Focus III lens supplied by Perkin-Elmer. The dara are calculated for x-rays at 90° relative to the
analyzer.
Ag
3d
5198
Eu
4d
2.210
Element Line
I,
Na
AI
2p
0193
F
1.000
Nb
3d
2.517
Sm
3d",
2.907
Ar
2p
1.011
Fe
I'
2p
2686
Nd
4.697
Sn
3d",
4.095
A,
3d
0.570
Gn
3.341
Ne
1.340
Sr
3d
1.578
Au
4r
5.240
Gd
2PJn
4d
3d
I,
2207
Ni
2p
3653
Ta
4f
2.589
B
0.159
Ge
2pJJ1
3100
0.711
Tb
4d
2.201
2.627
Hf
4f
2.221
°
I,
Ba
I'
4d
0,
4f
3747
Te
3d
3266
Be
I'
0.074
Hg
4f
5.797
P
2p
0.412
Te
3d",
4.925
Bi
4f
7.632
.Ho
4d
2.189
Ph
4f
6.968
Th
4fm
7.498
Br
3d
0895
I
3d",
5.337
Pd
3d
4.642
11
2p
1.798
C
I'
0.296
In
3d",
3m
Pm
3d
3754
T1
4f
6.447
Ca
2p
1.634
Ir
4f
4.217
Pr
3d
6.356
Tm
4d
2.172
Cd
3d",
3.444
K
2p
1.300
PI
4f
4.674
U
4fm
8.476
Ce
3d
7.399
Kr
3d
1.096
Rb
3d
1.316
V
2p
1.912
CI
2p
0770
La
3d
7708
Re
4f
3.327
W
4f
2.959
Co
2p
3.255
Li
0.025
Rh
3d
4.179
5.702
2p
2201
Lu
2.156
Ru
3d
3696
Xe
y
3d",
Cr
I'
4d
3d
1.867
Cs
3d",
6.032
Mg
2s
0.252
S
2p
0.570
Vb
4d
2.169
Cu
2p
4.798
Mn
2p
2.420
Sb
3d",
4.473
Zn
2PJn
3.354
Dy
4d
2.198
Mo
2.867
50
2p
1.678
Zr
3d
2.216
Er
4d
2.184
N
3d
I,
0.477
Se
3d
0.722
ASP
Element Line
'C.D Wagner," al.
252
Element Line
ASP
ASP
Element Line
ASP
1.685
Si
2p
0.283
S",! In">!a,, Anal. 3, 211 (1981)..
if\.
W'
Perkin-Elmer Corporation
Physical Electronics Division
Appendix F. Atomic Sensitivity Factors for X-ray Sources at 54.7'
This table is based upon empirical peak area values* correcledJor the syslem~' transmission function. The values are only valid for and
should only be applied when the electron energy Qnalyzer used has the transmission charaClerLstics oj the spherical capacitor type
analyzer equipped with an Glnni Focus miens supplied by Perkin-Elmer. The data afe calculated for x-rays at 54.7" relative to the
analyzer.
Element Line
ASF
Element Line
Ag
3d
5.987
Eu
4d
ASF
2.488
Al
2p
0.234
F
Is
1.000
Ar
2p
1.155
Fe
2p
2.957
As
3d
0.677
Ga
Is
1.340
Sr
3d
1.843
4f
6.250
Gd
3.720
2.484
Ne
Au
2P3n
4d
Ni
2p
4.044
Ta
4f
3.082
B
Is
0.159
Ge
0
Is
0.711
Tb
4d
2.477
Ba
3d,n
7.469
Hf
2P312
4f
3.457
2639
Os
4f
4.461
Tc
3d
3.776
Be
Is
0.074
Hg
4f
6.915
P
2p
0486
Te
3ds12
5.705
Bi
4f
9.140
Ho
4d
2.469
Pb
4f
8.329
Th
4fm
9.089
Br
3d
1.053
3ds12
6.206
Pd
3d
5.356
Ti
2p
2.00!
C
Is
0.296
In
3dsf2
4.359
Pm
3d
4.597
TI
4f
7.691
Ca
2p
1.833
Ir
4f
5.021
Pr
3d
7.627
Tm
4d
2.454
Cd
3ds12
3.974
K
2p
1.466
PI
4f
5.575
U
4f712
10.315
Ce
3d
8.808
Kr
3d
1.287
Rb
3d
1.542
V
2p
2.116
CI
2p
0.891
La
3d
9.122
Re
4f
3.961
W
4f
3.523
Co
2p
3.590
Li
Is
0.025
Rh
3d
4.822
Xe
3ds12
6.64
Cr
2p
2.427
Lu
4d
2.441
Ru
3d
4.273
Y
3d
2.175
Cs
3ds12
7.041
Mg
2s
0.252
S
2p
0.666
Yb
4d
2.451
Cu
2p
5.321
Mn
2p
2.659
Sb
3ds12
5.176
Zn
2P312
3.726
Dy
Er
4d
2.474
Mo
3d
Is
3.321
Sc
2p
1.875
Zr
3d
2.576
Sc
3d
4d
2.463
N
'C.D Wagner, et ,I. Sniffnlerface Anal 3,211 (1981).
Perkin-Elmer Corporation
Phv..;;ir.al Rl~r.tmJli('" nivi"itll1
iF\.
W
0.477
Element Line
Na
Is
Nb
3d
Nd
3d
ASF
1.685
Si
2p
ASF
0.339
2.921
Sm
3ds12
3.611
5.671
Sn
3d,n
4.725
0.853
Element Line
Appendix G. Line Positions') by Element for AI Ka X-rays
AI_ NWlbffl'lo::lt...c
" "
,
2plll 2M :II
~l"""
JplII )p.rj 3d1'l 30IlIl
,.
•
,• ,""" '"
,,,• , .,'"
III "
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~
C
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AU&tl' UIllI
1'1.,1"
4JM 4pl'l
-
lIS
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~
II
~
III
Il P
Il
~
Co
To
0
•
.
.
1,).\Il1o\lll~,"\llI,\lllq
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m
,...., ,. •
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•
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,., '"m,.,, .","lOll "'m " "
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,., ,.,
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1211
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7Il
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n
...
no
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Kl.tlk>ll
BIG
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10
KL,14I
m
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.....'" ...
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m
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m
1Il
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~,
m
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M.s/'I:lY
'll6
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1Il
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,.
II>
m
m
'"'IS'"
,.
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~Iao""'"
'03
I) Lines enclosed in boxes are the ones which are most useful for identifying chemical Slales.
b) Includes KVV dr.$ignalion when Ln is nol a £ore level.
c) [ksigoaliOll is oveaimplified.
d) locludes LVV wIlerI M btls an: not in corelnd MVY wbca N Ieveb are not in core.
e) No simple 4Pln 1ft aim f(l" this groupofelements.
l) The -4d doublel for ltcse ~ is ~ and is Ylrilble with clcnical $We because of IIllltiplet spIittill& &I1d muhi-dectron puuses.
g) The ~ is of low intellSity and is ofieD in the 5hili-up stnJdure of the 4f lines. These yahleS ae estimates of the energy.
254
Perkin-Elmer Corporation
Physical Electronics Diyision
.
~I(."ir N"""~r/..:lt"",,,
• "
. . '",.. '"
lplI'
~.
~,
lOS
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PhOl""l«tron Li...
4p", 4pl'>
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.... '" ....'" '"'" '" '"'"'" .."" ",f'
• . '" '"...
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"• • '" '"'" '" '"'" "".
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Perkin-Elmer Corporation
Physical Electronics Division
..
lO
II
S>
214· 2&:1
lJl1
1116
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II
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1326
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ill
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.
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50S
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850
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5U
161"
m
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on
211
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110)
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900
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M,......
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• •
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on '" ,,,.
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Appendix H. Line Positions') by Element for Mg Ka X-rays
,
.. .
,C
,- ..•
•,, ,c,
,
""
F
".
10
II
"" ,,"
IS
,
"a
,•
"
"n
n •
,
"" c,
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a) UIle.'i enclosed in boxes arc 1he ones whicll are mostllSeful for idenlifying chemical stales.
b) IlICludes KVV designalioo wilen Ln is not a core 1evtI.
c) Designation is oYmimplifled.
d) hx:ludes LVV when Mbock are Il)( in core and MVV Il'hc:n N b'eIs m not in core.
e) No simple 4pm1ine cxisu for !his gl\lllp or elements.
I) The 4d doubkc for these elemenu is comllleJ. and is variable with chemical state because of 1lJJlliplet splitting and JTI\llti-elr:ctron processes.
g) The 5s is of low intensity and is often in tlte sltake·up structure of the 4f lines. These yalues are estimates of the energy.
256
Perkin-Elmer Corporation
(I) Physical
Electronics Division
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Alorpi( Numbr,fUtmenl
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35
Perkin-Elmer Corporation
Physical Electronics Division
257
Appendix J. Line Positions in Numerical Order·
For photoelectroll lilies, the spin orbi! split/ing is indicated
Auger excitation is jnJicated in parentheses.
7
14
23
22
25
29
30
31
37
40
41
42
43
48
49
50
51
53
56
60
61
64
67
69
71
73
75
77
84
87
89
Lu 4f712
Hf4f,.
02s
Ta 4f
Sn 4d
Ge 3d",
F2s
(2)
(2)
W4fm
(2)
(2)
(I) .
V 3p
Rc4fm
Ne2s
As 3d",
Cr 3p
Mn3p
14d",
Mg2p
Os 4fm
Fe 3p
Li Is
Se 3d",
Co3p
IT 4f712
Xe 4dsn
Na2s
NiJp
Br 3d",
PI 4f1l2
AI2p
Cu 3p",
Cs4d",
Au 4fm
Kr 3d",
Zn 3p",
(2)
89
90
98
99
101
103
104
109
Mg 2,
Ba 4<1112
(3)
Er
(AI)
Si 2p",
Hg 4f,.
La 4d",
Ga 3p",
Ce 4d",
(I)
(4)
(3)
(3)
(3)
Ge
(Mg)
112 Rb 3d",
(I)
Be Is
(I)
.
(2)
(3)
(I)
(3)
(2)
(I)
(3)
(2)
(3)
(4)
(I)
(2)
115 Pr 4d
117 Ho
118 TI4f1l2
AI2s
121 Nd 4d
122 Ge 3p",
128 Eu 4d
129 Sm 4d
131 P2p",
134 Sf Jdsn
137 Pb 4f,.
140 Gd 4d
141 As3p",
146 Tb4d
151 Si 2s
152 Dy 4d
156 V3d",
157 Bi 4f1l2
160 Ho4d
163 Se 3p",
164 S 2p",
167 Er4d
(AI)
(4)
(4)
(1)
(2)
(5)
ill
parentheses. Auger lines are ill ;lalies, alld the phD/on source for the
175
179
181
182
186
188
189
196
199
202
208
211
226
228
(6)
(1)
(2)
S,
(AI)
Vb 4d
Br 3p",
(7)
Ga
(Mg)
P2s
B Is
Lu 4d5fl
C12p",
Nb 3d",
Kr 3p",
flf 4d",
Ta 4d.sn
S2s
Mo 3dy'!
Rb 3p",
AT 2p312
IV 4d",
Re 4d sn
(9) .
(2)
(13)
(14)
Na
(Mg)
Tb
(AI)
262 2"
(Mg)
As
(AI)
Sr3p",
Cl2s
Os 4d",
(II)
240
242
243
260
(5)
(2)
(5)
Tm 4d
Zr 3d",
270
271
279
280
285
Ru Jdj,'l
Tb4p",
Cis
294 K 2p",
297 Dy 4p",
If 4djJ2
(10)
(2)
(3)
(8)
(II)
(12)
(3)
(14)
(4)
(37)
(3)
(40)
(15)
299
301
307
309
315
320
321
330
333
Y3p",
(12)
Mg
(AI)
Rh 3d",
flo 4p",
PI 4d",
(5)
(44)
(17)
AT 25
Er4p",
Zr 3pJll
Th4f,.
Tm4p:lI1
335 Pd 3d",
Au4d.l/2
CII
341 Vb 4p",
342 G,
347 Ca 2p",
360 Lu 4p",
361 fig 4d",
Nb 3p",
368 Ag 3d",
369 Gd
377 U4f712
380 K 2s
385 T14d",
394 Mo 3p",
398 N Is
399 Sc 2p",
404 Ell
405 Cd 3d",
408 Ni
412 Pb 4d",
419 Ga
436 N,
(47)
(14)
(9)
(51 )
(5)
(18)
(Mg)
(48)
(AI)
(3)
(53)
(20)
(15)
(6)
(Mg)
(11)
(21)
(17)
(5)
(Mg)
(7)
(Mg)
(22)
(AI)
(Mg)
Corpor~lion
258
Perkin-Elmer
(J) Physicnl
Electronics Division
Handbook of X-ray Photoelectron Spectroscopy
440 Ca 2s
449
44\
444
454
462
480
485
493
495
497
499
512
525
526
528
531
533
551
561
564
568
573
Sm
Bi 4d",
In 3d",
11 2p",
Ru 3p",
(Mg)
Co
(Mg)
669
670
676
682
685
(24)
(8)
(6)
(22)
Sn Jdsn
(8)
No
(AI)
Zn
Rh 3p",
Sc 2,
V 2p",
(AI)
696
707
709
713
715
726
(24)
(8)
Nd
(Mg)
Dy
Sh 3d",
o Is
Pd 3p",
(AI)
(27)
F,
(Mg)
736
738
745
758
767
772
778
781
(9)
11 2s
Pr
(Mg)
Cu
(AI)
Ag 3p",
Te3d",
574 Cr 2p",
599 F
600 C,
602 Gd
619 Cd 3p",
\ 3d",
634 La
637 Eu
639 Mn 2p",
641 Ni
653 80
665 In 3p",
667 M"
(31)
(10)
(9)
784
797
799
816
820
832
833
835
836
843
853
863
867
870
(Mg)
(Mg)
(AI)
(34)
(12)
(Mg)
(AI)
(II)
(AI)
(Mg)
(38)
Appendix J. Line Positions in Numerical Order
N,
(AI)
Xe 3d",
Th 4d",
Sm
F Is
(13)
(37)
C,
(Mg)
(AI) .
874
884
886
8%
900
916
918
926
932
933
942
952
959
964
971
N
(Mg)
Ce 3dyz
80
(\8)
Ag
(Mg)
Mn
Sc
(AI)
(Mg)
C,
(AI)
1103 Cd
1107 N
1117 Ga 2p",
1126 Eo 3d",
1129 Ag
1149 Sc
1154 8j
(Mg)
Pd
(Mg)
1159 Pd
(AI)
Pr 3dyz
Cu 2p",
(20)
(20)
1161 Pb
(Mg)
1168 TI
(Mg)
X,
(AI) .
1179 Hg
(Mg)
Rh
(Mg)
1183 AI<
(Mg)
Cr
(AI)
1185 Rh
(AI)
Co
(Mg)
1186 Gd 3d",
(32)
U
(Mg)
1197 Co
(AI)
(AI)
(AI)
(AI)
(27)
(30)
(AI)
(AI)
Cr2s
Fe 2plI2
(13)
X,
(Mg)
Co
(AI)
Sn3p",
C,3d",
(42)
(14)
Cr
(Mg)
U 4d",
(42)
I
(Mg)
0
(Mg)
I
(AI)
1204 U
(AI)
Nd
(AI)
(AI)
(46)
(Mg)
(31)
T,
(Mg)
(21)
1212 Ru
1217 Ge 2p",
1223 C
(AI)
Sb3p",
978 0
979 Ru
981 Nd 3d",
Co 2p",
Ba3d",
(15)
(15)
990C
(Mg)
1239 Th
(AI)
1005 T,
(AI)
K
(AI)
V
(Mg)
1006 K
(Mg)
F,
Th
(Mg)
Pr
(AI)
.1014 V
(AI)
1241 Th 3d",
1272 Ar
1296 Dy 3d",
(35)
(AI)
Sb
(Mg)
1022 Zn 2p",
(23)
1299 Mo
(AI)
S"
Te 3p",
(Mg)
1032 Sb
. (AI)
(51)
1039 Ar
(Mg)
(AI)
F
C,
(AI)
S"
(AI)
13\9 Nb
(AI)
(Mg)
Ii
CI
(AI)
Ii
(Mg)
(35)
La 3d",
(17)
I"
(Mg)
Ni 2p",
Ne Is
La
(18)
Cd
(Mg)
1049
1068
1071
1072
1076
1077
1081
1086
1103
1303 Mg Is
1304 CI
13108
(AI)
(AI)
(AI)
(AI)
(37)
(AI)
I"
(AI)
1324 As 2p",
1336S
1387 8i
8
Sm 3d",
(Mg)
1394 Pb
(AI)
(27)
\401 TI
(AI)
Nb
(Mg)
\4\2 Hg
(AI)
S
(Mg)
\416 Au
(AI)
Na Is
(AI)
(AI)
(Mg)
Perkin-Elmer Corporation
Physical Electronics Division
m
'lI
259
Appendix K. Periodic Table
9
Atomic number
3
0.025
Is
Kll
Most intense photoelcetronlransition
Most intense Auger transitioo
H
4
PHI sensitivity faetor* for designated p/'Kltoelectron lransit;on
F
Element symbol
1
1.0
685
647
Binding energy, most intense photoelectron transition
Kinetic energy. most inlense Auger transition
Be
.
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Li
U1l5
10
1.340
13 0.193 14 "'" IS 0.412 16 o..s7Q 170.710 18
1.011
6
0,159
7 0.417
8
0.711
9
53l 1$
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B C
" . """ ."'''"" . " " ... """ ,..
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......AI ....
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5
0.074
2
In
12 ""
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'"
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..
..
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2p
512
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516 . . ,<5
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2.201
66
Ce Pr Nd Pm Sm Eu Gd Tb
:li1
411
118 •
'51 tftl" 110
89
Fr Ra Ac
80
3dw
r.IItI
1034 3I:U IOB1.td
1215'-
140 «:I
2.1118
67
68 tIll 692.m
702-1E1!l 71 2.l56
Ho Er Tm Yb Lu
Dy
146 4lI
2.189
152 4d
1m 4d
161 4d
115 4d
II! 41
7
~~~~~~_m_e_ti~eH~~11"~lm~.
90 Hill! 91
92
lU76
93
.....
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94
95
96
97
98
99
100
101
102
103
Th Pa U Np Pu Am Cm Bk Cf Es Fm Md No Lr
'M .,
'The values aTe for area measurements of the designated transitions and are only valid when the electron energy analyzer used has the transmission
characteristics of the spherical capacitor type analyzer equipped with an Omni Focus 111 lens supplied by Perkin-Elmer and with x-rays at 90" relative to the
analyzer. Where a spin-orbit splitting is 001 designated the nlue is for a measurement including both spin-Olbit componenl~
Perkin-Elmer Corporation
Physical Electroni~ Di\lision
26\