ARGUELLES, JOHN DAVID B.
TELE 2-1
INDUSTRIAL ELECTRONICS
SPECIAL DIODES
1. ZENER DIODE
2. TUNNEL DIODE
3. PIN DIODE
CONSTRUCTION
On both sides, a metallic layer is
used to form the cathode and
anode terminals.
The device is constructed by using
two terminals namely an anode
and cathode.
consists of two layers of
semiconductors and one layer of
intrinsic material in between
them.
4. SCHOTTKY DIODE It is made of metal and
semiconductors forming a
unilateral junction.
VI CHARACTERISTICS
APPLICATION
is a reverse-biased
heavily-doped PN junction
diode that operates in the
breakdown region
used for voltage
regulation, as reference
elements, as surge
suppressors, and in
switching applications and
clipper circuits.
The maximum current that can be used as a switch,
a diode reaches is Ip and
amplifier, and oscillator.
the voltage applied is Vp.
- Low Capacitance.
- High breakdown voltage.
- Sensitive to
photodetection.
- Charge carrier storage.
are very much similar to
the PN junction
diode. Current is the
dependent variable while
voltage is the
independent variable in
the Schottky diode.
Common applications of
PIN diodes are microwave
switches, phase shifters,
and attenuators, where
high isolation and low loss
are required.
sed as switches in fastclamp diode applications.
5. STEP RECOVERY
DIODE
6. GUNN DIODE
7. IMPATT DIODE
is a semiconductor that has a twoterminal P-I-N junction, hence
exhibiting, special dynamic
switching characteristics compared
to the p-n junction diode.
It is made up of three layers of Ntype semiconductors. The
semiconductors used in Gunn
diodes are Gallium Arsenide
(GaAs), Gallium Nitride (GaN),
Cadmium Telluride (CdTe),
Cadmium Sulphide (CdS), Indium
Phosphide (InP), Indium Arsenide
(InAs), Indium Antimonide (InSb)
and Zinc Selenide (ZnSe).
is a semiconductor
junction diode with the
ability to generate
extremely short pulses
used as a parametric
amplifier or pulse
generator.
After crossing the
threshold point the
current starts decreasing
and this creates negative
resistance region in the
diode.
Its largest use is in
electronic oscillators to
generate microwaves, in
applications such as radar
speed guns, microwave
relay data link
transmitters, and
automatic door openers.
This diode includes four regions
like P+-N-I-N+. The structure of
both the PIN diode and IMPATT is
the same, but it works on an
extremely high voltage gradient of
approximately 400KV/cm to
generate an avalanche current
IMPATT diode operates in
reverse bias. It exhibits a
negative resistance region
due to the impact of
avalanche and transit time
effects.
used in microwave links,
continuous-wave radars,
and electronic
countermeasures.