VS-GT400TH60N
www.vishay.com
Vishay Semiconductors
Molding Type Module IGBT,
2-in-1 Package, 600 V and 400 A
FEATURES
• Low VCE(on) trench IGBT technology
• Low switching losses
• 5 μs short circuit capability
• VCE(on) with positive temperature coefficient
• Maximum junction temperature 175 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
Dual INT-A-PAK
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
TYPICAL APPLICATIONS
VCES
600 V
• UPS
IC at TC = 80 °C
400 A
• Switching mode power supplies
VCE(on) (typical)
at IC = 400 A, 25 °C
1.60 V
• Electronic welders
Speed
8 kHz to 30 kHz
Package
Dual INT-A-PAK
Circuit configuration
Half bridge
DESCRIPTION
Vishay’s IGBT power module provides ultralow conduction
loss as well as short circuit ruggedness. It is designed for
applications such as UPS and SMPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
Collector to emitter voltage
VCES
600
Gate to emitter voltage
VGES
± 20
Collector current
Pulsed collector current
TC = 25 °C
IC
ICM (1)
UNITS
V
530
TC = 80 °C
400
tp = 1 ms
800
Diode continuous forward current
IF
400
Diode maximum forward current
IFM
800
A
Maximum power dissipation
PD
TJ = 175 °C
1600
W
Short circuit withstand time
tSC
TJ = 125 °C
5
μs
I2t-value, diode
I2t
VR = 0 V, t = 10 ms, TJ = 125 °C
10 900
A2s
2500
V
RMS isolation voltage
VISOL
f = 50 Hz, t = 1 min
Note
(1) Repetitive rating: pulse width limited by maximum junction temperature
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
Collector to emitter breakdown voltage
V(BR)CES
VGE = 0 V, IC = 2 mA, TJ = 25 °C
600
-
-
VGE = 15 V, IC = 400 A, TJ = 25 °C
-
1.6
2.05
VGE = 15 V, IC = 400 A, TJ = 175 °C
-
2.0
-
4.0
-
6.5
Collector to emitter saturation voltage
VCE(on)
V
Gate to emitter threshold voltage
VGE(th)
VCE = VGE, IC = 4 mA, TJ = 25 °C
Zero gate voltage collector current
ICES
VCE = VCES, VGE = 0 V, TJ = 25 °C
-
-
5.0
mA
Gate to emitter leakage current
IGES
VGE = VGES, VCE = 0 V, TJ = 25 °C
-
-
400
nA
Revision: 18-Sep-17
Document Number: 93488
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT400TH60N
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Vishay Semiconductors
SWITCHING CHARACTERISTICS
PARAMETER
SYMBOL
Turn-on delay time
TEST CONDITIONS
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
VCC = 400 V, IC = 400 A, Rg = 1.3 ,
VGE = ± 15 V, TJ = 25 °C
MIN.
TYP.
MAX.
-
35
-
-
70
-
-
180
-
-
75
-
Turn-on switching loss
Eon
-
14.1
-
Turn-off switching loss
Eoff
-
10.0
-
Turn-on delay time
td(on)
-
37
-
tr
-
72
-
-
220
-
Rise time
Turn-off delay time
td(off)
Fall time
tf
VCC = 400 V, IC = 400 A, Rg = 1.3 ,
VGE = ± 15 V, TJ = 175 °C
-
84
-
Turn-on switching loss
Eon
-
23.2
-
Turn-off switching loss
Eoff
-
16.8
-
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
SC data
ISC
VGE = 0 V, VCE = 30 V, f = 1.0 MHz
tsc  5 μs, VGE = 15 V, TJ = 125 °C, 
VCC = 360 V, VCEM  600 V
-
30.8
-
-
2.12
-
-
0.92
-
-
TBD
-
UNITS
ns
mJ
ns
mJ
nF
A
Internal gate resistance
Rgint
-
1.3
-

Stray inductance
LCE
-
-
20
nH
-
0.35
-
m
UNITS
Module lead resistance, terminal to chip
RCC’+EE’
TC = 25 °C
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Diode forward voltage
VF
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current
Irr
Diode reverse recovery energy
TEST CONDITIONS
IF = 400 A
IF = 400 A, VR = 300 V,
dI/dt = -7000 A/μs,
VGE = -15 V
Erec
MIN.
TYP.
MAX.
TJ = 25 °C
-
1.38
1.80
TJ = 125 °C
-
1.41
-
TJ = 25 °C
-
15.5
-
TJ = 125 °C
-
28.5
-
TJ = 25 °C
-
265
-
TJ = 125 °C
-
335
-
TJ = 25 °C
-
3.5
-
TJ = 125 °C
-
7.5
-
V
μC
A
mJ
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Operating junction temperature range
Storage temperature range
Junction to case
per ½ module
Case to sink
Mounting torque
Weight
IGBT
Diode
MIN.
TYP.
MAX.
TJ
TEST CONDITIONS
-
-
175
TStg
-40
-
125
-
-
0.094
-
-
0.158
-
0.035
-
RthJC
RthCS
Conductive grease applied
Power terminal screw: M6
2.5 to 5.0
Mounting screw: M6
3.0 to 5.0
300
UNITS
°C
K/W
Nm
g
Revision: 18-Sep-17
Document Number: 93488
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT400TH60N
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Vishay Semiconductors
800
70
700
60
600
50
Eon, Eoff (mJ)
25 °C
IC (A)
500
175 °C
400
300
40
Eon
Eoff
30
20
200
10
100
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
VCE (V)
93488_01
200
400
600
800
IC (A)
93488_03
Fig. 3 - IGBT Switching Loss vs. Collector Current
VCC = 600 V, Rg = 1.3 , VGE = ± 15 V, TJ = 175 °C
Fig. 1 - IGBT Typical Output Characteristics
VGE = 15 V
800
100
700
90
80
600
400
TJ = 175 °C
300
70
Eon, Eoff (mJ)
IC (A)
500
50
Eon
40
30
TJ = 25 °C
200
Eoff
60
20
100
10
0
0
3
93488_02
4
5
6
7
8
9
0
10
VGE (V)
5
15
20
Rg (Ω)
93488_04
Fig. 2 - IGBT Typical Transfer Characteristics
VCE = 20 V
10
Fig. 4 - Switching Loss vs. Gate Resistor
VCE = 600 V, IC = 400 A, VGE = ± 15 V, TJ = 175 °C
900
800
IC, module
700
IC (A)
600
500
400
300
200
100
0
0
93488_05
100
200
300
400
500
600
700
VCE (V)
Fig. 5 - RBSOA
Rg = 1.3 , VGE = ± 15 V, TJ = 175 °C
Revision: 18-Sep-17
Document Number: 93488
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT400TH60N
www.vishay.com
Vishay Semiconductors
ZthJC (K/W)
1
0.1
IGBT
0.01
0.001
0.001
0.01
0.1
1
10
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
93488_06
12
800
700
10
600
8
E (mJ)
IC (A)
500
400
300
4
200
150 °C
2
25 °C
100
0
0
0
93488_07
Erec
6
0.5
1.0
1.5
2.0
0
VF (V)
200
Fig. 7 - Forward Characteristics of Diode
400
600
800
IF (A)
93488_08
Fig. 8 - Diode Switching Loss vs. IF
VCC = 600 V, Rg = 1.3 , VGE = - 15 V, TJ = 125 °C
8
7
6
Erec
E (mJ)
5
4
3
2
1
0
0
93488_09
2
4
6
8
10
12
Rg (Ω)
Fig. 9 - Diode Switching Loss vs. Gate Resistance
VCC = 600 V, IC = 400 A, VGE = - 15 V, TJ = 125 °C
Revision: 18-Sep-17
Document Number: 93488
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT400TH60N
www.vishay.com
Vishay Semiconductors
ZthJC (K/W)
1
0.1
Diode
0.01
0.001
0.001
0.01
0.1
1
10
t (s)
Fig. 10 - Diode Transient Thermal Impedance
93488_10
CIRCUIT CONFIGURATION
6
7
1
2
3
5
4
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95525
Revision: 18-Sep-17
Document Number: 93488
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Double INT-A-PAK
DIMENSIONS in millimeters (inches)
26
23 ± 0.3
6
7.2 ± 0.6
31 ± 0.5
2.8 x 0.5
16
3-M6
30.5 ± 0.5
Mounting depth max. 11
Ø
6.
4
±
28 ± 0.3
28 ± 0.3
20.1
0.
2
6
22
35.4
27 ± 0.4
3
15 ± 0.4
2
30
48 ± 0.4
61.4
1
6
93 ± 0.4
106.4
Revision: 27-May-13
Document Number: 95525
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 01-Jan-2022
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Document Number: 91000