SHINDENGEN Switching Power Transistor HFX Series OUTLINE DIMENSIONS 2SC4236 Case : MTO-3P (T6W80HFX) Unit : mm 6A NPN RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current DC Collector Current Peak Base Current DC Base Current Peak Total Transistor Dissipation Mounting Torque Symbol Tstg Tj VCBO VCEO VEBO IC I CP IB I BP PT TOR Electrical Characteristics (Tc=25) Item Symbol Collector to Emitter Sustaining Voltage VCEO(sus) Collector Cutoff Current I CBO I CEO Emitter Cutoff Current I EBO DC Current Gain hFE hFEL Collector to Emitter Saturation Voltage VCE(sat) Base to Emitter Saturation Voltage VBE(sat) Thermal Resistance Æjc Transition Frequency fT Turn on Time ton Storage Time ts Fall Time tf Conditions Tc = 25 (Recommended torque : 0.5N¥m) Conditions I C = 0.2A At rated Voltage At rated Voltage VCE = 5V, I C = 3A VCE = 5V, I C = 1mA I C = 3A I B = 0.6A Junction to case VCE = 10V, I C = 0.6A I C = 3A I B1 = 0.6A, I B2 = 1.2A RL = 85¶, VBB2 = 4V Ratings -55`150 150 1200 800 7 6 12 3 6 100 0.8 Unit V V V A Ratings Min 800 Max 0.1 Max 0.1 Max 0.1 Min 8 Min 7 Max 1.0 Max 1.5 Max 1.25 TYP 8 Max 0.5 Max 3.5 Max 0.3 Unit V mA A W N¥m mA V V /W MHz Ês DC Current Gain hFE −55°C 0°C −25°C 50°C 25°C 100°C Tc = 150°C 1 0.001 10 100 0.01 0.1 hFE - I C Collector Current IC [A] 2SC4236 1 10 12 VCE = 5V Collector-Emitter Voltage VCE [V] 6.0A 6.0A 9.0A 9.0A 12A 6 2.5 0 0.01 0.5 1 Tc = 25°C 0.1 Base Current IB [A] 1 0 0.5 1 1.5 3.0A 3.0A 1.5 1.5A 1.5A 3 2 IC = 0.75A IC = 0.75A Saturation Voltage 2 2.5 3 2SC4236 Base-Emitter Voltage VBE [V] 2SC4236 Switching Time - IC 10 ts Switching Time tSW [µs] 1 ton 0.1 tf IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCC = 250V Tc = 25°C 0.01 0 1 2 3 4 Collector Current IC [A] 5 6 2SC4236 Switching Time - VCC 10 ts Switching Time tSW [µs] 1 ton tf 0.1 IC = 3A IB1 = 0.6A IB2 = 1.2A VBB2 = 4V Tc = 25°C 0.01 0 50 100 150 200 Collector Voltage VCC [V] 250 300 2SC4236 Switching Time - Tc 10 ts Switching Time tSW [µs] 1 ton tf 0.1 IC = 3A IB1 = 0.6A IB2 = 1.2A VBB2 = 4V R L = 85Ω 0.01 0 50 100 Case Temperature Tc [°C] 150 2SC4236 L-Load Switching Time - IC 10 ts Switching Time tSW [µs] 1 tf + tvs 0.1 tf IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCE (clamp) = 300V Tc = 25°C 0.01 0 1 2 3 4 Collector Current IC [A] 5 6 2SC4236 L-Load Switching Time - IC (At High Temperature) 10 ts Switching Time tSW [µs] 1 tf + tvs tf 0.1 IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCE (clamp) = 300V Tc = 100°C 0.01 0 1 2 3 4 Collector Current IC [A] 5 6 0.01 0.1 1 10 0.001 Transient Thermal Impedance θjc(t) [°C/W] 10-4 10-3 10-2 2SC4236 Time t [s] 10-1 100 Transient Thermal Impedance 101 2SC4236 Forward Bias SOA 12 10ms 10 1ms 150µs 50µs DC Collector Current IC [A] PT limit 1 IS/B limit 0.1 Tc = 25°C Single Pulse 0.01 1 10 100 Collector-Emitter Voltage VCE [V] 800 2SC4236 Collector Current Derating Collector Current Derating [%] 100 IS/B limit 80 60 40 PT limit 20 VCE = fixed 0 0 50 100 Case Temperature Tc [°C] 150 2SC4236 Reverse Bias SOA 12 IB1 = 0.25IC IB2 = 0.9A VBB2 = 5V Tc < 150°C 10 Collector Current IC [A] 8 6 4 2 0 0 200 400 600 800 1000 Collector-Emitter Voltage VCE [V] 1200 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.