VLSI Assignment -1
Tool: LT SPICE TSMC 180 nm CMOS Devices , VDD = 1.8V
Your Name and ID should be written as TEXT within the Schematic
Submit one zip folder containing all the five .asc files
1. Schematic 1: Transfer Characteristics of NMOS. L= 180 nm W=1um. Write down the
observed ION and IOFF as plain text within the schematic. The indicated ION and IOFF will be verified by
the evaluator by running the simulation command available in your schematic.
2. Schematic 2: Transfer Characteristics of PMOS. L= 180 nm W=1u Write down the observed
ION and IOFF as plain text within the schematic. The indicated ION and IOFF will be verified by the
evaluator by running the simulation command available in your schematic.
3. Schematic 3: Resistor Loaded NMOS Inverter. VTC Curve. For NMOS L= 180 nm W=1u. R
= 10 K and 100 K. Indicate the VOL and Static Currents in both cases as text in the schematic
itself.
4. Schematic 4: Design a CMOS inverter with NMOS and PMOS channel length 180 nm.
NMOS Channel width 400 nm. Do a VTC (DC) parametric analysis with PMOS width varying
from 800 nm to 1600 nm in steps of 400 nm. Write in the schematic the best width for PMOS for
a symmetrical VTC.
5. Schematic 5: For the above CMOS inverter (choose PMOS width for symmetrical VTC)
measure the NMOSFET Power, PMOSFET Power and Total Power. Use C_Load as 10 fF.
6. Schematic 6: Implement CMOS Static Full Adder
7. Schematic 7: Implement CMOS Dynamic Full Adder