半导体功率器件： 高压封装集成 宋正 . CONTENTS 1.导言 2.半导体器件的应用 3.电网对器件的要求 4.SiC高压器件封装集成 5.IGBT高压封装集成 6.结论 1.导言 Power devices have reached an extremely high level of efficiency, thanks to the research of numerous companies in the sector. The excellent results are due to the synergies of different electronic and physical sectors which, combined together, allow to reach the highest levels. The high voltages present in factory automation, motor drives, grid infrastructure and electric vehicles (EVs) can be several hundred or even thousands of volts – good for efficiency, but potentially harmful for low-voltage circuits and humans. This ppt will explain by examples how the packaging and the integration of semiconductor power devices allow for very high efficiency, especially at high switching speeds, high voltages in such a way as to actively use all the available power. 2.半导体器件的应用 The first priority of any system operating with high voltage is protecting maintenance personnel and end-equipment users. The second priority is establishing reliable and safe operation between high- and low-voltage circuits, performing such functions as voltage and current sensing, powersupply control, digital communication and signal processing. Galvanic isolation satisfies both priorities by isolating the high voltage from low-voltage sections 2.半导体器件的应用 3.电网对器件的要求 Packaging/integration that reduces short circuit failures and allows for efficient heat dissipation Device failure and open circuit will produce arc combustion effect at the disconnection, resulting in the burning of power electronic equipment o Therefore, maintain the short-circuit state when the device fails Device having high power. o double-sided heat dissipation to reduce the thermal resistance 3.电网对器件的要求 3. Crimp/Press-pack encapsulated devices advantages double-sided heat dissipation failure short circuit easy series connection low stray inductance 4.SiC高压器件封装集成 SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both. Large single crystals of silicon carbide can be grown by the Lely method and they can be cut into gems known as synthetic moissanite。SiC is far much better than the traditional Si by multiples. The forbidden band width of SiC material is 3 times that of Si, the critical breakdown field strength is 8 times that of Si, and the thermal conductivity is 3 times that of Si. The maximum voltage strength of any SiC device is 10 times that of Si, the current density is 5 times that of Si device, and the frequency is 10 times that of Si. . n-channel-4H-SiC-MOSFET-single-cell The packaging materials mainly include the substrate material to which the silicon carbide chip is attached, the patch material to bond the silicon carbide and the substrate, and the electrode connection bonding material. Sketch map of a SiC device package 18kV / 125A SiC IGBT 器件整体结构 Elastic press method is used. Considering the yield and cost of SiC chip, the grouping method is used, that is, the module adopts two sub modules in parallel, one of which is IGBT module and the other is an FRD module. 18kV / 125A SiC IGBT 器件整体结构 5.IGBT高压封装集成 ABB_StaKPaK IGBT Module In the 1990s, with the increase of chip size, the chip yield decreased. In order to improve the utilization of chips, Jens Gobrecht and others of Hitachi ABB company first proposed a press-pack packaging structure using multiple small chips in parallel instead of the whole wafer and pointed out that this packaging structure can be used for semiconductor chips such as IGBT, GTO, MCT, MOSFET and so on. Press-packs are preferred because of the ease with which they can be connected electrically and mechanically in series and because of their inherent ability to conduct in the shorted state-an essential feature where redundancy is required. The basic structure of the package is shown in the figure below, in which A and B refer to two different semiconductor chips respectively, one for forward conduction and one for reverse conduction. 6.结论 Currently the main objectives are two: increasing performance and reducing costs. For these purposes it is necessary to adapt the production processes. Automated production offers many possibilities in this regard. Heterogeneous integration will therefore be the future for high-performance, parasitic-free switching devices, for both SiC and GaN devices, and it is available for all users. High voltage and high power semiconductor packaging technology is the key link in the development of high voltage, high current and high reliability crimped/press-packed IGBT devices. REFERENCES Z. Chen, Z. Yu, X. Zhang, T. Wei, G. Lyu, L. Qu, Y. Huang and R. Zeng, “Analysis and experiments for IGBT, IEGT, and IGCT in hybrid DC circuit breaker,” IEEE Trans. Ind. Electron., vol. 65, no. 4, pp. 2883-2892, Apr. 2018 A. Agarwal, “Advances in SiC MOSFET Performance”,ECPE SiC & GaN Forum Potential of Wide Band Gap Semi-conductors in Power Electronic Applications, Birmingham,(2011) Dou Zechun,Liu Gouyou,Chen Jun,et al, “ Design and key technologies of high power press-pack IGBT device", High Power Converter Technology,2016(2)
