SEMICONDUCTORS
NPN TIP35-A-B-C
SILICON POWER TRANSISTORS
They are PNP power transistors mounted in jedec TO-3PN. They are intended for use in
general purpose power amplifier and switching applications.
PNP complements are TIP36-A-B-C
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
ICM
Collector Peak Current
04/10/2012
Value
TIP35
TIP35A
TIP35B
TIP35C
TIP35
TIP35A
TIP35B
TIP35C
TIP35
TIP35A
TIP35B
TIP35C
TIP35
TIP35A
TIP35B
TIP35C
TIP35
TIP35A
TIP35B
TIP35C
COMSET SEMICONDUCTORS
40
60
80
100
40
60
80
100
Unit
V
V
5
V
25
A
40
A
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SEMICONDUCTORS
NPN TIP35-A-B-C
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Base Current
IB
@ Tc < 25°
PC
Power Dissipation
@ Ta < 25°
Junction Temperature
TJ
Storage Temperature range
Ts
TIP35
TIP35A
TIP35B
TIP35C
TIP35
TIP35A
TIP35B
TIP35C
TIP35
TIP35A
TIP35B
TIP35C
TIP35
TIP35A
TIP35B
TIP35C
TIP35
TIP35A
TIP35B
TIP35C
Value
Unit
5
A
125
Watts
3.5
150
°C
-65 to +150
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-MB
From junction to mounting base
RthJ-A
From junction to ambient in free air
04/10/2012
TIP35
TIP35A
TIP35B
TIP35C
TIP35
TIP35A
TIP35B
TIP35C
COMSET SEMICONDUCTORS
Value
Unit
1
°C/W
35.7
°C/W
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SEMICONDUCTORS
NPN TIP35-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
ICES
Collector Cutoff Current
ICEO
Collector Cutoff Current
IE= 0, VCE = VCEO
IB= 0, VCE = 30V
IB= 0, VCE = 60V
IEBO
VCEO
Emitter Cutoff Current
VEB= 5 V, IC= 0
Collector-Emitter
Breakdown Voltage (*)
IC= 30 mA, IB= 0
IC= 15 A, IB= 1.5 A
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
IC= 25 A, IB= 5 A
IC= 15 A, VCE= 4 V
VBE(on)
Base-Emitter Voltage
(*)
IC= 25 A, VCE= 4 V
VCE=4 V, IC= 1.5 A
hFE
DC Current Gain (*)
VCE= 4 V, IC= 15 A
TIP35
TIP35A
TIP35B
TIP35C
TIP35
TIP35A
TIP35B
TIP35C
TIP35
TIP35A
TIP35B
TIP35C
TIP35
TIP35A
TIP35B
TIP35C
TIP35
TIP35A
TIP35B
TIP35C
TIP35
TIP35A
TIP35B
TIP35C
TIP35
TIP35A
TIP35B
TIP35C
TIP35
TIP35A
TIP35B
TIP35C
TIP35
TIP35A
TIP35B
TIP35C
TIP35
TIP35A
TIP35B
TIP35C
Min
Typ
Max
Unit
-
-
0.7
Ma
-
-
1
-
-
1
-
-
1
mA
40
60
80
100
-
-
V
-
-
1.8
V
-
-
4
V
-
-
2
V
-
-
4
V
25
-
-
mA
15
-
75
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
04/10/2012
COMSET SEMICONDUCTORS
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SEMICONDUCTORS
NPN TIP35-A-B-C
Symbol
fT
Ratings
Current GainBandwidth Product
Test Condition(s)
VCE= 10 V, IC= 10 A
f= 1kHz
Min
Typ
Max
Unit
3
-
-
MHz
TIP35
TIP35A
TIP35B
TIP35C
MECHANICAL DATA CASE TO3PN Non Isolated Plastic Package
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
R
S
T
Pin 1 :
Pin 2 :
Pin 3 :
Case :
Max.
15.20
1.90
4.60
3.10
1600
2.10
5.00
3.30
9.60
2.00
0.55
1.40
5.55
0.35
5.35
20.00
19.60
0.95
20.20
1.25
2.00
3.00
4.00
4.00
1.80
5.20
4.80
Base
Collector
Emitter
Collector
September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
04/10/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
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