.MODEL NHW NMOS ( VTO=1 KP=50U LAMBDA=.03 GAMMA=.6 + PHI=0.8 TOX=1.5E-10 CGDO=5E-10 CGSO= 5e-10 CJ=1E-4 CJSW=5E-10 + MJ=0.5 PB=0.95 )
.MODEL PHW PMOS ( VTO=-1 KP=20U LAMBDA=.033 GAMMA=.6 + PHI=0.8 TOX=1.5E-10 CGDO=5E-10 CGSO= 5e-10 CJ=1E-4 CJSW=5E-10 + MJ=0.5 PB=0.95 )
.MODEL BJTHWN NPN(IS=5E-16 ISE=8E-14 ISC=1.72E-13 XTI=3 BF=100
+BR=35.5 IKF=0.14 IKR=0.03 XTB=1.5 VAF=50 VAR=12.5 VJE=0.7 VJC=0.54 +RE=0.6 RC=0.25 RB=0.56 CJE=13p CJC=4p XCJC=0.75 FC=0.5 NF=0.9955 +NR=1.005 NE=1.46 NC=1.27 MJE=0.33 MJC=0.33 TF=0.64n TR=50.72n EG=1.11 VCEO=45V ICRATING=100M MFG=ZETEX)
*IS-->Saturation Current, BF-->Beta, VJE-->Base-Emitter Built in Potential *VJC-->Base-Collector Built in Potential VAF-->Forward Region Early Effect Region
*You will generally modify IS, BF, VJE and VAF, in this course. Please do not change anything else if it is not necessary.
*The other parameters cover more advanced courses.
.MODEL BJTHWP PNP bf=350 br=5 is=400f rb=100 rbm=10 irb=50u rc=10 ikf=70m xti=3 xtb=1.5 xtf=1.1 vaf=70 itf=40m +vtf=75 cje=20p xcjc=0.5 cjc=15p tf=0.3n tr=25n vjc=.7 mjc=.33 mje=.33 vje=.5 xcjc=0.15 ne=2 ise=315p +nc=2 isc=600p Vceo=35 Icrating=100m mfg=USSR