# gg

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1. If a sinusoidal voltage is applied to the base of a biased npn transistor and the resulting
sinusoidal collector voltage is clipped near zero volts, the transistor is
Ans: Being Driven into cutoff and operating nonlinearly.
Ans: Being driven into cutoff
2. Which transistor bias circuit provides good Q-point stability with a single-polarity supply
voltage?
Ans: Voltage Divider bias
3.
Ans: 8.23 V (Iba yun napalabas ko dito pero malapit sa 8.23 V)
4.
Ans: 1.71 mA
Sure ako tama to
5. Emitter bias is
Ans: answers (a) and (c)
(essentially independent of βdc and provides a stable bias point)
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6.
Ans: 9.52 V (Sure ako tama to)
7. What is the Q-point for a fixed-bias transistor with I = 75 μA, βDC = 100, Vcc = 20 V, and
Rc = 1.5 kΩ?
Ans: VC = 8.75 V
8. Which transistor bias circuit arrangement has poor stability because its Q-point varies
widely with DC?
Ans: Base bias
9. The linear region of a transistor’s operation lies between saturation and cutoff.
Ans: True
10. Voltage-divider bias has a relatively stable Q-point, as does
Ans: Collector bias
11. A pnp transistor requires bias voltage polarities opposite to an npn transistor.
Ans: True
12. Negative feedback is employed in collector-feedback bias.
Ans: True
13. For a common-emitter amplifier, the purpose of swamping is
Ans: to reduce the effects of r'e
14. What is the unit of the parameter ho?
Ans: Siemens
15. The advantage that a Sziklai pair has over a Darlington pair is
Ans: less input voltage is needed to turn it on.
16. What is the range of the current gain for BJT transistor amplifiers?
Ans: Any of the choices (the choices are: more than 100 or 1 to 100 or less than
1)
17. Q-point is the quadratic point in a bias circuit.
Ans: False
18. For a common-emitter amplifier, . if the frequency is reduced to the point where , the
voltage gain __________
Ans: Greater
19. The current gain for the Darlington connection is
Ans:
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Di ko alam to
1. A certain n-channel E-MOSFET has VGS(th) = 2V. If VGS= 0V, the drain current is
Ans: 0m
2. An n-channel E-MOSFET conducts when it has
Ans: An N-Type inversion layer
3. IGFET is a/an ______ device.
Ans: Square Law
4. VGS(on) is always
Ans: Greater than VGS(th)
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5. The input gate current of a FET is
Ans: Negligible
6. A p-channel D-MOSFET with a negative VGS is operating in
Ans: the enhancement mode
7. Which among the following devices is the most suited for high frequency applications?
Ans: MOSFET
8. The broken line in schematic symbol of E-MOSFET indicates the
Ans: Absence of a physical channel
9. A certain p-channel E-MOSFET has VGS(th) = -2V. If VGS= -3V, the drain current is
Ans: 0mA
10. The VGS(on) of an n-channel E-MOSFET is
Ans: Greater than VGS(th)
11. An E-MOSFET with its gate connected to its drain is an example of
Ans: An Active Load
12. The arrow on the symbol of MOSFET indicates
Ans: the direction of electrons
13. An E-MOSFET that operates at cutoff or in the ohmic region is an example of
Ans: A Switching Device
14. A MOSFET has ______ terminals.
Ans: 3
15. A certain n-channel E-MOSFET has VGS(th) = 2V. If VGS= 3V, the drain current is
Ans: max? 0?
16.
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17.
18.
19. A MOSFET differs from a JFET mainly because
Ans: the JFET has a pn junction
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