CHENMKO ENTERPRISE CO.,LTD
CH751H-40PT
SURFACE MOUNT
SCHOTTKY BARRIER DIODE
VOLTAGE 40 Volts CURRENT 0.03 Ampere
APPLICATION
* High speed switching for detection
SC-76/SOD-323
FEATURE
* Small surface mounting type. (SC-76/SOD-323)
* Low VF and low IR
* High reliability
Cathode Band
(1)
(2)
0.25~0.4
1.15~1.4
CONSTRUCTION
1.6~1.8
* Silicon epitaxial planar
MARKING
* JV
0.6~1.0
0.08~0.177
0.25~0.45
0.1Max.
CIRCUIT
2.3~2.7
(2)
Dimensions in millimeters
(1)
SC-76/SOD-323
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
SYMBOL
CH751H-40PT
UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM
40
Volts
Maximum RMS Voltage
VRMS
28
Volts
Maximum DC Blocking Voltage
VDC
40
Volts
IO
0.03
Amps
IFSM
0.2
Amps
pF
RATINGS
Maximum Average Forward Rectified Current
Peak Forward Surge Current at 8.3 mSec single half sine-wave
Typical Junction Capacitance between Terminal (Note 1)
CJ
2.0
Maximum Operating Temperature Range
TJ
+125
o
C
TSTG
-40 to +125
o
C
Storage Temperature Range
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
SYMBOL
CH751H-40PT
UNITS
Maximum Instantaneous Forward Voltage at IF= 1mA
CHARACTERISTICS
VF
0.37
Volts
Maximum Average Reverse Current at VR= 30V
IR
0.5
uAmps
NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 1.0 volts.
2. ESD sensitive product handling required.
2001-6
RATING CHARACTERISTIC CURVES ( CH751H-40PT )
FIG. 2 - REVERSE CHARACTERISTICS
FIG. 1 - FORWARD CHARACTERISTICS
1000m
100u
REVERSE CURRENT, (A)
5
o
C
10m
75oC
=1
2
1m
Ta
FORWARD CURRENT, (A)
100m
25oC
100u
-25oC
10u
10u
75oC
1u
25oC
100n
- 25oC
10n
Typ.
pulse measurement
1n
1u
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
FORWARD VOLTAGE, (V)
100
Ta = 25oC
f = 1MHz
50
20
10
5
2
1
0
2
4
6
8
10
REVERSE VOLTAGE, (V)
0
5
10
15
20
25
REVERSE VOLTAGE, (V)
FIG. 3 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, (pF)
Ta =125oC
Typ.
pulse measurement
12
14
30
35