Gilbert Cell Mixer Design
Technology/
Node
130 nm
180 nm
1
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5
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Supply
Voltage
1.3 V
1.8 V
Design Specification
Conversion
Noise
Third Order
Gain
Figure
Input Intercept Point
> 10 dB
< 10 dB
> -10 dBm
> 10 dB
< 10 dB
> -10 dBm
Node/Technology/Gate Length (L)
Supply Voltage VDD
unCox
Assumed Conversion Gain GC or AV
Assumed DC Power Consumption Pdc
Current Source ISS
Transconductance gm
Assumed Resistive Load RL
Transistor Widths WRF, WLO
Overdrives Vod_RF, Vod_SS (Vgs-Vt)
Input/RF frequency fRF
LO frequency fLO
Output/IF frequency
Input/RF Power PRF
LO Power PLO
Simulated Conversion Gain Gc or AV
Simulated Noise Figure NF
Simulated 1-dB Compression
Simulated Third Order Intercept Point IIP3
Figure of Merit FoM
0.13 um (130 nm)
1.3 V
511 uA/V2
10 dB
2.5 mA
1.92 mA
31.4 mS
500 Ω
131 um, 65.3 um
61.2 mV, 122 mV
5.825 GHz
5.725 GHz
100 MHz
-30 dBm
0 dBm
10.01 dB
9.38 dB
-16.22 dBm
-7.1 dBm
51.72 dB
Required Equations:
Pdc = VDD*ISS
WLO = 2* WRF
Vod_LO = ½ * Vod_RF
Power
Consumption
< 5 mW
< 5 mW
0.18 um (180 nm)
1.8 V
387 uA/V2
10 dB
3.5 mA
? mA
? mS
500 Ω
? um, ? um
? mV, ? mV
2.4 GHz
2.3 GHz
100 MHz
-30 dBm
0 dBm
? dB
? dB
? dBm
? dBm
? dB