DG648BH45
DG648BH45
Gate Turn-off Thyristor
Replaces March 1998 version, DS4093-2.3
DS4093-3.0 January 2000
APPLICATIONS
KEY PARAMETERS
2000A
ITCM
VDRM
4500V
IT(AV)
745A
dVD/dt
1000V/µs
diT/dt
300A/µs
■ Variable speed A.C. motor drive inverters (VSD-AC)
■ Uninterruptable Power Supplies
■ High Voltage Converters
■ Choppers
■ Welding
■ Induction Heating
■ DC/DC Converters
FEATURES
■ Double Side Cooling
■ High Reliability In Service
■ High Voltage Capability
■ Fault Protection Without Fuses
■ High Surge Current Capability
■ Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements
Outline type code: H.
See Package Details for further information.
VOLTAGE RATINGS
Type Number
DG648BH45
Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage
VDRM
VRRM
V
V
4500
16
Conditions
Tvj = 125oC, IDM = 50mA,
IRRM = 50mA
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
2000
A
ITCM
Repetitive peak controllable on-state current VD = VDRM, Tj = 125oC, diGQ/dt = 40A/µs, Cs = 2.0µF
IT(AV)
Mean on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
745
A
IT(RMS)
RMS on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
1170
A
1/19
This datasheet has been downloaded from http://www.digchip.com at this page
DG648BH45
SURGE RATINGS
Symbol
ITSM
I2t
diT/dt
dVD/dt
LS
Conditions
Parameter
Max.
Units
Surge (non-repetitive) on-state current
10ms half sine. Tj = 125oC
16.0
kA
I2t for fusing
10ms half sine. Tj =125oC
1.28 x 106
A2s
Critical rate of rise of on-state current
VD = 4500V, IT = 2000A, Tj = 125oC, IFG > 30A,
Rise time > 1.0µs
300
A/µs
To 66% VDRM; RGK ≤ 1.5Ω, Tj = 125oC
175
V/µs
To 66% VDRM; VRG = -2V, Tj = 125oC
1000
V/µs
200
nH
Rate of rise of off-state voltage
Peak stray inductance in snubber circuit
IT = 2000A, VDM = 4500V,- Tj = 125˚C,
diGQ/dt = 40A/µs, Cs = 2.0µF
GATE RATINGS
Symbol
Parameter
Min.
Max.
Units
-
16
V
20
100
A
Average forward gate power
-
15
W
Peak reverse gate power
-
19
kW
VRGM
Peak reverse gate voltage
IFGM
Peak forward gate current
PFG(AV)
PRGM
Conditions
This value maybe exceeded during turn-off
diGQ/dt
Rate of rise of reverse gate current
30
60
A/µs
tON(min)
Minimum permissable on time
50
-
µs
tOFF(min)
Minimum permissable off time
100
-
µs
Min.
Max.
Units
Double side cooled
-
0.018
o
Anode side cooled
-
0.03
o
Cathode side cooled
-
0.045
o
-
0.006
o
-
125
o
Operating junction/storage temperature range
-40
125
o
Clamping force
18.0
22.0
kN
THERMAL RATINGS AND MECHANICAL DATA
Symbol
Rth(j-hs)
Parameter
DC thermal resistance - junction to heatsink
surface
Rth(c-hs)
Contact thermal resistance
Tvj
Virtual junction temperature
TOP/Tstg
-
2/19
Conditions
Clamping force 20.0kN
With mounting compound
per contact
C/W
C/W
C/W
C/W
C
C
DG648BH45
CHARACTERISTICS
Tj = 125oC unless stated otherwise
Symbol
Conditions
Parameter
Min.
Max.
Units
VTM
On-state voltage
At 2000A peak, IG(ON) = 7A d.c.
-
3.2
V
IDM
Peak off-state current
VDRM = 4500V, VRG = 0V
-
100
mA
IRRM
Peak reverse current
At VRRM
-
50
mA
VGT
Gate trigger voltage
VD = 24V, IT = 100A, Tj = 25oC
-
1.0
V
IGT
Gate trigger current
VD = 24V, IT = 100A, Tj = 25oC
-
3.0
A
IRGM
Reverse gate cathode current
VRGM = 16V, No gate/cathode resistor
-
50
mA
EON
Turn-on energy
VD = 3000V
-
3170
mJ
td
Delay time
IT = 2000A, dIT/dt = 300A/µs
-
1.35
µs
tr
Rise time
IFG = 30A, rise time < 1.0µs
-
3.2
µs
Turn-off energy
-
10000
mJ
tgs
Storage time
-
20.0
µs
tgf
Fall time
IT = 2000A, VDM = VDRM
-
2.0
µs
tgq
Gate controlled turn-off time
Snubber Cap Cs = 2.0µF,
-
22.0
µs
QGQ
Turn-off gate charge
diGQ/dt = 40A/µs
-
6000
µC
QGQT
Total turn-off gate charge
-
12000
µC
IGQM
Peak reverse gate current
-
690
A
EOFF
3/19
DG648BH45
2.0
8.0
1.5
6.0
1.0
4.0
VGT
0.5
2.0
Gate trigger current IGT - (A)
Gate trigger voltage VGT - (V)
CURVES
IGT
0
-50
-25
0
25
50
75 100
Junction temperature Tj - (˚C)
0
150
125
Fig.1 Maximum gate trigger voltage/current vs junction temperature
Instantaneous on-state current ITM - (A)
4000
Measured under pulse conditions.
IG(ON) = 7A
Half sine wave 10ms
Tj = 125˚C
3000
Tj = 25˚C
2000
1000
0
0
1.0
2.0
3.0
4.0
Instantaneous on-state voltage VTM - (V)
Fig.2 On-state characteristics
4/19
5.0
DG648BH45
Maximum permissible turn-off
current ITCM - (A)
3000
Conditions:
Tj = 125˚C, VDM = VDRM,
dIGQ/dt = 40A/µs
2000
1000
0
0
1.0
2.0
3.0
Snubber capacitance CS - (µF)
4.0
Fig.3 Maximum dependence of ITCM on CS
0.020
0.015
0.010
0.005
0
0.001
0.01
0.1
Time - (s)
1.0
10
Fig.4 Maximum (limit) transient thermal impedance - double side cooled
Peak half sine wave on-state current - (kA)
Thermal impedance - ˚C/W
dc
40
30
20
10
0
0.0001
0.001
0.01
Pulse duration - (s)
0.1
Fig.5 Surge (non-repetitive) on-state current vs time
1.0
5/19
DG648BH45
Mean on-state power dissipation - (W)
4000
Conditions:
IG(ON) = 7A
dc
3000
180˚
120˚
2000
60˚
30˚
1000
0
0
500
1000
1500
Mean on-state current IT(AV) - (A)
70
80
90 100 120
Maximum permissible case
temperature - (˚C)
130
Mean on-state power dissipation - (W)
Fig.6 Steady state rectangluar wave conduction loss - double side cooled
3000
Conditions:
IG(ON) = 7A
180˚
120˚
90˚
2000
60˚
30˚
1000
0
0
200 400 600 800 1000 1200 1400 80
90 100 120 130
Mean on-state current IT(AV) - (A)
Maximum permissible case
temperature - (˚C)
Fig.7 Steady state sinusoidal wave conduction loss - double side cooled
6/19
DG648BH45
Conditions:
Tj = 25˚C, IFGM = 30A,
CS = 2.0µF,
dI/dt = 300A/µs,
3000 dIFG/dt = 30A/µs
VD = 3000V
VD = 2000V
2000
1000
VD = 1000V
0
0
500
1000
1500
2000
On-state current IT - (A)
2500
3000
Fig.8 Turn-on energy vs on-state current
5000
Conditions:
Tj = 25˚C, IT = 2000A,
CS = 2.0µF, RS = 10 Ohms
dI/dt = 300A/µs,
dIFG/dt = 30A/µs
4000
Turn-on energy loss EON - (mJ)
Turn-on energy loss EON - (mJ)
4000
3000
VD = 3000V
2000
VD = 2000V
1000
VD = 1000V
0
0
20
40
60
Peak forward gate current IFGM - (A)
80
Fig.9 Turn-on energy vs peak forward gate current
7/19
DG648BH45
Turn-on energy loss EON - (mJ)
4000
Conditions:
Tj = 125˚C, IFGM = 30A,
CS = 2.0µF,
RS = 10Ω,
3000 dIT/dt = 300A/µs,
dIFG/dt = 30A/µs,
VD = 3000V
VD = 2000V
2000
1000
0
VD = 1000V
0
500
1000
1500
2000
On-state current IT - (A)
2500
3000
Fig.10 Turn-on energy vs on-state current
5000
Conditions:
Tj = 125˚C, IT = 2000A,
CS = 2.0µF, RS = 10 Ohms
dI/dt = 300A/µs,
dIFG/dt = 30A/µs
3000
Turn-on energy loss EON - (mJ)
Turn-on energy loss EON - (mJ)
4000
4000
VD = 3000V
VD = 2000V
2000
1000
Conditions:
IT = 2000A,
Tj = 125˚C,
CS = 2.0µF
3000 RS = 10 Ohms
IFGM = 30A,
dIFG/dt = 30A/µs
VD = 3000V
VD = 2000V
2000
1000
VD = 1000V
VD = 1000V
0
0
0
100
200
300
Rate of rise of on-state current dIT/dt - (A/µs)
0
20
40
60
Peak forward gate current IFGM - (A)
Fig.11 Turn-on energy vs peak forward gate current
8/19
80
Fig.12 Turn-on energy vs rate of rise of on-state current
DG648BH45
tr
3.0
2.0
td
1.0
0
Conditions: Tj = 125˚C, IFGM = 30A,
CS = 2.0µF, VD = 3000V,
RS = 10Ω, dIT/dt = 300A/µs,
dIFG/dt = 30A/µs,
0
500
1000
1500
2000
On-state current IT - (A)
2500
3000
Fig.13 Delay time & rise time vs turn-on current
8.0
Turn-on delay time and rise time - (µs)
Turn-on delay and rise time - (µs)
4.0
Conditions:
Tj = 125˚C, IT = 2000A,
CS = 2.0µF,
RS = 10 Ohms,
dI/dt = 300A/µs,
dIFG/dt = 30A/µs,
VD = 3000V
6.0
4.0
2.0
tr
td
0
0
20
40
60
Peak forward gate current IFGM - (A)
80
Fig.14 Delay time & rise time vs peak forward gate current
9/19
DG648BH45
5000
4000
Turn-off energy loss EOFF - (mJ)
VDRM
Conditions:
Tj = 25˚C,
CS = 2.0µF,
dIGQ/dt = 40A/µs
0.75x VDRM
3000
0.5x VDRM
2000
1000
0
0
500
1000
1500
2000
On-state current IT - (A)
2500
3000
Fig.15 Turn-off energy vs on-state current
Turn-off energy per pulse EOFF - (mJ)
6000
Conditions:
Tj = 25˚C,
CS = 2.0µF,
IT = 2000A
VDRM
5000
0.75x VDRM
4000
3000
2000
20
0.5x VDRM
30
40
50
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Fig.16 Turn-off energy vs rate of rise of reverse gate current
10/19
70
DG648BH45
10000
Conditions:
Tj = 125˚C,
CS = 2.0µF,
dIGQ/dt = 40A/µs
0.75x VDRM
6000
0.5x VDRM
4000
2000
0
0
500
1000
1500
2000
2500
On-state current IT - (A)
FIG 17Fig.17
TURNTurn-off
OFF ENERGY
ON STATE CURRENT
energy vs on-state current
12000
Turn-off energy per pulse EOFF - (mJ)
Turn-off energy loss EOFF - (mJ)
8000
VDRM
Conditions:
Tj = 125˚C,
CS = 2.0µF,
IT = 2000A
3000
VDRM
10000
0.75x VDRM
8000
6000
4000
20
0.5x VDRM
30
40
50
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
70
Fig.18 Turn-off energy loss vs rate of rise of reverse gate current
11/19
DG648BH45
Turn-off energy per pulse EOFF - (mJ)
8000
Conditions:
Tj = 125˚C,
VDM = 0.75x VDRM,
dIGQ/dt = 40A/µs
CS = 2.0µF
CS = 4.0µF
6000
4000
2000
0
0
500
1000
1500
2000
On-state current IT - (A)
2500
3000
Fig.19 Turn-off energy vs on-state current
Gate storage time tgs - (µs)
20.0
Conditions:
CS = 2.0µF,
dIGQ/dt = 40A/µs
Tj = 125˚C
Tj = 25˚C
15.0
10.0
5.0
0
0
500
1000
1500
2000
On-state current IT - (A)
Fig.20 Gate storage time vs on-state current
12/19
2500
3000
DG648BH45
30
Conditions:
CS = 2.0µF,
IT = 2000A
Gate storage time tgs - (µs)
25
20
Tj = 125˚C
15
10
20
Tj = 25˚C
30
40
50
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
70
Fig.21 Gate storage time vs rate of rise of reverse gate current
2.0
Tj = 125˚C
Conditions:
CS = 2.0µF,
dIGQ/dt = 40A/µs
Gate fall time tgf - (µs)
1.5
Tj = 25˚C
1.0
0.5
0
0
500
1000
1500
2000
On-state current IT - (A)
2500
3000
Fig.22 Gate fall time vs on-state current
13/19
DG648BH45
2.5
Conditions:
CS = 2.0µF,
IT = 2000A
Tj = 125˚C
Gate fall time tgf - (µs)
2.0
1.5
Tj = 25˚C
1.0
0.5
20
30
40
50
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
70
Fig.23 Gate fall time vs rate of rise of reverse gate current
Peak reverse gate current IGQM - (A)
800
Conditions:
CS = 2.0µF,
dIGQ/dt = 40A/µs
Tj = 125˚C
600
Tj = 25˚C
400
200
0
0
500
1000
1500
2000
Turn-off current IT - (A)
2500
Fig.24 Peak reverse gate current vs turn-off current
14/19
3000
DG648BH45
750
Conditions:
CS = 2.0µF,
IT = 2000A
Tj = 125˚C
Peak reverse gate current IGQM - (A)
700
650
Tj = 25˚C
600
550
500
20
30
40
50
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
70
Fig.25 Peak reverse gate current vs rate of rise of reversegate current
Total turn-off charge QGQ - (µC)
8000
Conditions:
CS = 2.0µF,
dIGQ/dt = 40A/µs
Tj = 125˚C
6000
Tj = 25˚C
4000
2000
0
0
500
1000
1500
2000
On-state current IT - (A)
2500
3000
Fig.26 Turn-off gate charge vs on-state current
15/19
DG648BH45
Turn-off gate charge QGQ - (µC)
7000
Conditions:
CS = 2.0µF,
IT = 2000A
6000
TJ = 125˚C
5000
Tj = 25˚C
4000
3000
20
30
40
50
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
70
Rate of rise of off-state voltage dV/dt
- (V/µs)
Fig.27 Turn-off gate charge vs rate of rise of reverse gate current
1000
Tj = 125˚C
500
VD = 2250V
VD = 3000V
0
0.1
1.0
10
100
Gate cathode resistance RGK - (Ohms)
1000
Fig.28 Rate of rise of off-state voltage vs gate cathode resistance
16/19
Anode voltage and current
DG648BH45
0.9VD
0.9IT
dVD/dt
VD
VD VDM
IT
td
ITAIL
VDP
0.1VD
tgs
tr
tgf
tgt
Gate voltage and current
dIFG/dt
0.1IFG
tgq
IFG
VFG
IG(ON)
0.1IGQ
tw1
VRG
QGQ
0.5IGQM
IGQM
V(RG)BR
Recommended gate conditions:
ITCM = 2000A
IFG = 30A
IG(ON) = 7A d.c.
tw1(min) = 20µs
IGQM = 690A
diGQ/dt = 40A/µs
QGQ = 6000µC
VRG(min) = 2V
VRG(max) = 16V
These are recommended Dynex Semiconductor conditions. Other conditions are permitted
according to users gate drive specifications.
Fig.29 General switching waveforms
17/19
DG648BH45
PACKAGE DETAILS
For further package information, please contact Customer Service. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.60 ± 0.05 x 2.0 ± 0.1 deep (One in each electrode)
Cathode Aux. Tube
Gate Tube
15˚
52
Anode
26 ± 0.5
Ø100
Ø62.85
9.6
Ø62.85
55
Nominal weight: 820g
Clamping force: 20kN ±10%
Lead length: 505mm
Package outine type code: H
18/19
Cathode
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
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Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901.
Fax: +44 (0)1522 500020
North America: Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2002 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
Datasheet Annotations:
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Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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