See discussions, stats, and author profiles for this publication at: https://www.researchgate.net/publication/272237398 Steady State and Dynamic Performance of an SVC Device With Matlab/SimPowerSystems Conference Paper · April 2008 CITATIONS READS 0 623 2 authors: Bekri Oum El Fadhel Loubaba Mohammed-Karim Fellah Taher Moulay University of Saida University of Sidi-Bel-Abbes 34 PUBLICATIONS 52 CITATIONS 159 PUBLICATIONS 667 CITATIONS SEE PROFILE Some of the authors of this publication are also working on these related projects: Contribution of the Fuzzy Logic in the Optimal Control of Asynchronous Machine View project Inverters View project All content following this page was uploaded by Mohammed-Karim Fellah on 14 February 2015. The user has requested enhancement of the downloaded file. SEE PROFILE nd 2 اﻟﻤﻠﺘﻘﻰ اﻟﺪوﻟﻲ اﻟﺜﺎﻧﻲ ﺣﻮل اﻟﻬﻨﺪﺳﺔ اﻟﻜﻬﺮﺑﺎﺋﻴﺔ International Conference on Electrical and Electronics Engineering 21‐23 April 2008 Steady State and Dynamic Performance of an SVC Device With Matlab/SimPowerSystems O. L. BEKRI * loubabab@yahoo.fr M.K. FELLAH ** mkfellah@yahoo.fr * Institute of Sciences and Technology. University Center Dr Moulay Tahar, Saïda, Algeria. I. Phone. : 048 47 47 07 Fax : 048 47 42 62 ** ICEPS laboratory (Intelligent Control & Electrical Power Systems) Electrical Engineering Department, Engineering Sciences Faculty University of Sidi Bel-Abbes, Algeria. Abstract— The Static Var Compensator (SVC) is generally used as a voltage controller in power systems. It can help maintain the voltage magnitude at the bus it is connected to at a desired value during load variations. The SVC can both absorb as well as supply reactive power at the bus it is connected to by control of the firing angle of the thyristor elements. In this paper, we present the control limits of the SVC in the first part, and the dynamic performance of the SVC in the second part, using Matlab/SimPowerSystems. Keywords— FACTS, SVC, dynamic performance, SimPowerSystems Résumé— Le compensateur statique d’énergie réactive (Static Var Compensator ou SVC) est généralement utilisé comme un contrôleur de tension dans les systèmes d’énergie. Il peut aider à maintenir l’amplitude de la tension dans le noeud où il est connecté à une valeur désirée lors des variations de charge. Le SVC peut à la fois absorber ainsi générer de la puissance réactive au nœud où il est connecté par le contrôle de l'angle d’amorçage des thyristors. Dans cet article, nous allons, en premier lieu, présenté les limites de contrôle du SVC. En seconde partie, nous présenterons la performance dynamique du SVC en utilisant le logiciel de simulation Matlab/SimPowerSystems. I. INTRODUCTION: The first device in the group of shunt connected FACTS devices and in the whole family of the FACTS was the SVC (Static Var Compensator) appeared about two (2) decades ago [1]. The SVC is normally installed to prevent excessive voltage variations at the selected terminal(s) during major power lines or generating stations being lost and for a continuous voltage support during the daily load cycle, but none to control active power flow. The IEE defines the SVC as “A shunt connected static Var generator or absorber whose output is adjusted to exchange capacitive or inductive current so as to maintain or control specific parameters of electrical power system (typically a bus voltage)”. II. STATIC VAR COMPENSATOR: SVC is basically a shunt connected static var generator/load whose output is adjusted to exchange capacitive or inductive current so as to maintain or control specific power system variables; typically, the controlled variable is the SVC bus voltage [2]. One of the major reasons for installing a SVC is to improve dynamic voltage control and thus increase system loadability. The two most popular configurations of this type of shunt controller are the fixed capacitor (FC) with a thyristor controlled reactor (TCR), and the thyristor switched capacitor (TSC) with TCR. Of these two setups, the second (TSC-TCR) minimizes standby losses; however, from a steady-state perspective, we can model the SVC as a variable reactive power source. Figure 1 shows the schematic diagram of a SVC. A. The Thyristor Controlled Reactor (TCR) [3]: The TCR consists of a fixed reactor of inductance L and a bidirectional thyristor valve. In a practical valve, many thyristors (typically 10 to 40) are connected in series to meet the required blocking voltage levels. Applying simultaneously a gate pulse 2nd International Conference on Electrical and Electronics Engineering ICEEE'08 114 nd 2 اﻟﻤﻠﺘﻘﻰ اﻟﺪوﻟﻲ اﻟﺜﺎﻧﻲ ﺣﻮل اﻟﻬﻨﺪﺳﺔ اﻟﻜﻬﺮﺑﺎﺋﻴﺔ International Conference on Electrical and Electronics Engineering 21‐23 April 2008 to all thyristors of a thyristors valve brings the valve into conduction. The valve will automatically block approximately at the zero crossings of the AC current, in the absence of a firing signal. Thus, the controlling element is the thyristor valve. • V = I Bl max SVC is fully inductive ( B = Bl max ) where: V : Positive sequence voltage (pu) Vref : Reference voltage (pu) I : Reactive current (pu/pbase) (I> 0 indicates an inductive current) Xs : Slope or droop reactance (pu/pbase). Bc max : Maximum capacitive susceptance (pu/pbase) with all TCSs in service, no TSR or TCR. Bl max : Maximum inductive susceptance (pu/pbase) with all TSRs in service or TCRs at full conduction, no TSC. Typical values for the slope X s are in the range of Fig. 1 : Schematic diagram of an SVC The current TCR is essentially reactive, lagging the voltage by nearly 90°. The active component of the current is very small and the losses of the device are of the order of 0.5 to 2℅ of the reactive power; therefore, one of the modeling assumptions is that the resistance of the inductor may be neglected. Another assumption that is made here is that the voltage applied to the TCR is sinusoidal, which for the SVC, a shunt device, is reasonable as the supply voltage is the bus voltage. The firing angle α is defined as the angle in electrical degrees between the positive going zerocrossing of the voltage across the inductor and the positive going zero crossing of the current through it. The thyristors are fixed symmetrically; therefore, the maximum possible firing angle is 180°. Full conduction is obtained with a gating angle of 90°. 0.02 to 0.05 p.u. with respect to the SVC base. The slope is needed to avoid hitting limits for small variations of the bus voltage. At the voltage limits, the SVC is transformed into a fixed reactance. A typical value for the controlled voltage range is 10 %. a. SVC V-I Characteristic [4]: The SVC can be operated in two different modes: • In voltage regulation mode (the voltage is regulated within limits, as explained below). See figure 2. A.1. Control and limits of the SVC: The steady state control law for the SVC is the typical current-voltage characteristic the V-I characteristic is described by the flowing three equations: • V = Vref + Xs I SVC is in regulation range (- Bc max < B < Bl max ) • V = I Bc max SVC is fully capacitive Fig. 2: The SVC V-I characteristic in voltage regulation mode • ( B = Bc max ) In var control mode (the SVC susceptance is kept constant). See figure 3. 2nd International Conference on Electrical and Electronics Engineering ICEEE'08 115 nd 2 اﻟﻤﻠﺘﻘﻰ اﻟﺪوﻟﻲ اﻟﺜﺎﻧﻲ ﺣﻮل اﻟﻬﻨﺪﺳﺔ اﻟﻜﻬﺮﺑﺎﺋﻴﺔ International Conference on Electrical and Electronics Engineering 21‐23 April 2008 Fig. 5: The actual positive_sequence susceptance B1 and control signal output B of the voltage regulator Fig. 3: The SVC V-I characteristic in var control mode Primary Voltages Voltage Measurement + TCR B - Secondary Voltages pulses Voltage Regulator Vra Vref Synchronizing Unit (PLL) Pulse Generator n_TSC α Distribution Unit TSC Control System Fig. 4: single line diagram of an SVC and its Control System Block diagram As long as the SVC susceptance B stays within the maximum and minimum susceptance values imposed by the total reactive power of capacitor banks (Bcmax) and reactor banks (Blmax), the voltage is regulated at the reference voltage Vref. However, a voltage droop is normally used (usually between 1% and 4% at maximum reactive power output). Figure 6 shows the SVC reactive power output (pu). A positive value indicates inductive operation. b. The SVC dynamic response: The figure 4 shows a single-line diagram of a static var compensator and a simplified block diagram of its control system. From figure 5 to figure 9: Initially, the source is generating its nominal voltage. At t= 0.1s, the voltage is decreased (0.97pu). At t= 0.4s, the voltage is increased (1.03pu) and finally, at t= 0.7s, return to nominal voltage (1pu). Figure 5 shows the actual positive-sequence susceptance Bactual and control signal output Bcontrol of the voltage regulator. Fig. 6: The SVC reactive power output Figure 7 shows the actual system positive-sequence voltage Vactual and output Vm of the SVC measurement system. Figure 8 compares the SVC susceptance B (output of the voltage regulator) for two different short circuit levels: 3000MVA and 600MVA. If we decrease the system strength, the average time delay due to valve firing is not negligible and we instead 2nd International Conference on Electrical and Electronics Engineering ICEEE'08 116 nd 2 اﻟﻤﻠﺘﻘﻰ اﻟﺪوﻟﻲ اﻟﺜﺎﻧﻲ ﺣﻮل اﻟﻬﻨﺪﺳﺔ اﻟﻜﻬﺮﺑﺎﺋﻴﺔ International Conference on Electrical and Electronics Engineering 21‐23 April 2008 observe an oscillatory response and eventually instability. Fig. 9.b: The phasor current Ib flowing into the SVC Fig. 7: The actual system positive-sequence voltage V-I and output Vm of the SVC measurement system Fig. 9.c: The phasor current Ic flowing into the SVC Fig. 8: The SVC susceptance for two different short-circuit levels: 3000 MVA and 600 MVA Figure 9 shows the phasor currents Ia, Ib, and Ic flowing into the SVC. From figure 10 to 13, we compare the SVC reactive power with different value of the firing angle α. Fig. 10: The reactive power for α = 0° Fig. 11: The reactive power for α = 90° Fig. 9.a: The phasor current Ia flowing into the SVC 2nd International Conference on Electrical and Electronics Engineering ICEEE'08 117 nd 2 اﻟﻤﻠﺘﻘﻰ اﻟﺪوﻟﻲ اﻟﺜﺎﻧﻲ ﺣﻮل اﻟﻬﻨﺪﺳﺔ اﻟﻜﻬﺮﺑﺎﺋﻴﺔ International Conference on Electrical and Electronics Engineering 21‐23 April 2008 Ia Va Fig. 12: The reactive power for α = 120° Fig. 13: The reactive power for Fig. 14: The voltage and the current of the source α = 180° Fig. 15: The SVC reactive power Vmeas A.2. Dynamic performance of the SVC on a transmission system Vref From figure 14 to figure 17: Initially, the source voltage is set at 1.004 pu, resulting in a 1.0 pu voltage at SVC terminals when the SVC is out of service (fig. 14). As the reference voltage Vref is set to 1.0 pu, the SVC is initially floating (zero current). This operating point is obtained with TSC1 in service and TCR almost at full conduction (α = 96 degrees) (fig. 15). At t=0.1s, voltage is suddenly increased to 1.025 pu (fig. 14). The SVC reacts by absorbing reactive power (Q=-95 Mvar) to bring the voltage back to 1.01 pu (fig. 15). The 95% settling time is approximately 135 ms. At this point, all TSCs are out of service and the TCR is almost at full conduction (α = 94 degrees) (figure 17). At t=0.4 s, the source voltage is suddenly lowered to 0.92 pu (fig. 14). The SVC reacts by generating 256 Mvar of reactive power (fig. 15). Thus increasing the voltage to 0.974 pu. At this point, the three TSCs are in service and the TCR absorbs approximately 40% of its nominal reactive power (α =120 degrees) (figure 17). Fig. 16: Vmeas and Vref The TSCs are sequentially switched on and off (figure 18). Each time a TSC is switched on the TCR α angle changes from 180 degrees (no conduction) to 90 degrees (full conduction) (figure 17). Finally, at t=0.7s, the voltage is increased to 1.0 pu and the SVC reactive power is reduced to zero (figure 15). A.3. Steady-state voltage and current in TCR AB The figures 19 and 20 simulate steady-state voltage and current in TCR AB for α =120 degree. The figure 19 shows the voltage across the TCR and the current through it, the current and the voltage are not sinusoidal anymore. 2nd International Conference on Electrical and Electronics Engineering ICEEE'08 118 nd 2 اﻟﻤﻠﺘﻘﻰ اﻟﺪوﻟﻲ اﻟﺜﺎﻧﻲ ﺣﻮل اﻟﻬﻨﺪﺳﺔ اﻟﻜﻬﺮﺑﺎﺋﻴﺔ International Conference on Electrical and Electronics Engineering 21‐23 April 2008 Fig. 20: Thyristor pulses on the TCR AB Fig. 17: The phase degree TCR The major contribution of this study can be summarized as follows: 1. Description of the SVC behavior. 2. Study of Steady-State and Dynamic Performance of the SVC using Matlab/SimPowerSystems: control and limits of the SVC and dynamic performance of the SVC on a transmission system. REFERENCES [1] A.Oudalov, «Coordinated control of multiple Fig. 18: The number of TSCs Iab TCR Vab TCR Fig. 19: The TCR voltage and current in branch AB III. CONCLUSION The simulation described in this article illustrates application of SimPowerSystems to study the steady-state and dynamic performance of a static var compensator (SVC) on a transmission system. The SVC is a shunt device of the Flexible AC Transmission Systems (FACTS) family using power electronics. It regulates voltage by generating or absorbing reactive power. FACTS devices in an electric power system», thesis presented to the Engineering Sciences Faculty, Lausanne, Switzerland 2003. [2] N. Mithulananthan, C. A. Cañizares, J. Reeve, and G. J. Rogers, "Comparison of PSSS, SVC and STATCOM Controllers for Damping Power System Oscillations," IEEE Transactions on Power Systems, Vol. 18, No. 2, May 2003, pp. 786-792. [3] C.A. Canizares, « Modeling of TCR and VSI Based FACTS Controllers " Report AT-UCR 99/595, ENEL Ricerca, Area Trasmissione e Dispacciamento, Milan, Italy, December 1999. [4] Mathworks/SimPowerSystems, 7.5 version, 2007. [5] C.A. Canizares, and Z. Faur, «Analysis of SVC and TCSC controllers in voltage collapse», IEEE Transactions on Power Systems, Vol. 14, No. 1, February 1999, pp. 158-165. Loubaba Bekri : received her Bachelor (1986) and Engineers (1992) degree in Electrical Engineering from Sidi Bel-Abbes University in Algeria, and her Master (2002) from ENSET, Oran,Algeria. She worked in University Center Dr Moulay Tahar, Saïda, Algeria from 1992 to 2008. Mohammed Karim Fellah : was born in Oran, Algeria, in 1963. He received the Eng. degree in Electrical Engineering from University of Sciences and Technology, Oran, Algeria, in 1986, and The Ph.D. degree from National Polytechnic Institute of Lorraine (Nancy, France) in 1991. Since 1992, he is Professor at the University of Sidi-bel-Abbes (Algeria) and Director of the Intelligent Control and Electrical Power Systems Laboratory at this University. His current research interest includes Power Electronics, HVDC links, and Drives. 2nd International Conference on Electrical and Electronics Engineering ICEEE'08 119 View publication stats