M
N
European Power-
Semiconductor and
Electronics Company
Modern high power frequency converters (
>
approx. 1 MW) are increasingly realised with
IGBT or GCT (Gate Controlled Thyristor) devices. Here, the line side power converter is often designed as “active front end”. This means that the same devices are used in the input bridge as well as in the inverter. Subsequently, regeneration into the net plus improvement of cos ϕ
is possible.
For general applications, however, half-controlled bridges or 12 resp. 24 pulse diode bridges are used. Therefore, eupec has developed a complete range of high voltage, phase control rectifier diodes with disc package design. The corresponding high blocking thyristors are also included in eupec’s product range.
IGBT’s and GCT’s are mainly used in voltage source converters, therefore, operation is only possible with adapted, fast switching free-wheeling diodes. Especially for high outputs and high voltage, discrete free-wheeling diodes offer the following advantages:
•
Hermetic sealed capsules with high case non-rupture current.
•
High reliability and thermocycling stability at low internal thermal resistance.
•
Redundant series connections, because, in case of failure, a short-circuit follows.
The discrete free-wheeling diodes, developed by eupec, enable additional scope regarding their design. Their use avoids the critical paralleling of diodes in application. Therefore, applications with series connection are interesting for the use of these diodes as well as applications where high reliability at high temperature cycles is needed. Main applications are:
•
IGBT traction converters (exact substitution of GTO converters).
•
Medium voltage drives with 2.3 kV to 10 kV nets.
•
High voltage converters for high voltage direct current transmission, static Var compensation and EQM up to approx. 150 kV and 300 MW.
For further information write to: eupec
Marketing
Max-Planck-Straße 5
D-59581 Warstein
Phone: +49 2902 764-1144
Fax: +49 2902-764-1150
Internet:: http://www.eupec.com
2000-03-14

Marketing News Page 2 of 3
V
RRM
6,5 kV D711N D1481N 65DN65 *) D3001N
9,0 kV D471N 55DN90 *) 65DN90 *)
Contact 38mm
Flange 58mm
48mm
75mm
63mm
100mm
D2601N
85mm
120mm
119DN90 **)
150mm
170mm
*) available on demand
**) related to project
Remarks: The data of the diodes D711N, D1481N and D3001N are only available up to 6 kV right now. By changing the silicon specification, also the 6,5 kV voltage class will be offered in the future.
V
RRM
6,5 kV
4,5 kV
34DSH65
Contact 34mm
Flange 58mm
55DSH45
55DSX45
48mm
75mm
D931SH65T
D1441SX60T
D1031SH45T
D1641SX45T
63mm
100mm
D1131SH65T
D1331SH45T
85mm
120mm
Those diodes with a conventional type designation are at present being produced.
Exact data can be found on eupec’s homepage at the internet
(http:\\www.eupec.com).
Samples for test purpose of the other diodes can be obtained or produced on demand. More details upon request.
SH = diodes for hard switching with IGBT’s resp. GCT’s.
The technical data are for a connection with inductive di/dt limitation and overvoltage clamp.
SX = diodes for small snubber with the purpose of di/dt limitation and low leakage inductance (L
σ ≤
100 NH).
MN2000-04e High Power Diodes 2000-03-14

Marketing News Page 3 of 3
3 Level IGBT - converters with 12 pulse diode input rectifiers for medium voltage drives.
Rectifier DC link
+ (C) Crow bar
Inverter
1W1
1V1
1U1
0 (M)
2W1
2V1
2U1
− (D)
1U2 1V2 1W2
Diodes for input rectifiers:
The currently offered 6,5 KV and 9 kV diodes are sufficient for 3,3 kV and 4,5 kV
IGBT’s. It might be necessary to develop diodes with higher blocking voltage for the
6,5 kV IGBT’s with development status. eupec has issued preliminary tests with diodes with 13 kV blocking voltage. This objective was achieved with small-area diodes, large-area diodes are currently developed.
Free-wheeling diodes:
Medium term, the 6,5 kV IGBT devices are trend-setting. Higher blocking voltages have already been announced for GCT’s. Simulations to that respect have shown that the corresponding 9 kV free-wheeling diodes produce considerably more losses than two 4,5 kV diodes connected in series. Therefore, the development of those diodes does not seem reasonable at present.
MN2000-04e High Power Diodes 2000-03-14