# MELZG 632 Assignment 1

```MELZG 632: Analog IC Design
Assignment 1
Submission Date: 18th August 2019
Note: Until and otherwise stated use the device data given in table at the end of this
document and assume π½π«π« = π π½ where necessary.
1. Sketch πΌπ and transconductance of the transistor as a function of ππ for each circuit
given as ππ varies from 0 to ππ·π· .
2. Sketch πππ’π‘ as a function of πππ for the circuit given as πππ varies from 0 to ππ·π· .
3. Sketch ππ and πΌπ as a function of time for the circuit given. The initial voltage of πΆ1
is equal to 3 V.
4. The transit frequency, ππ , of a MOSFET is defined as the frequency at which the
small-signal current gain of the device drops to unity while the source and drain
terminals are held at ac ground. Prove that
ππ =
ππ
2π(πΆπΊπ· + πΆπΊπ )
Note that ππ does not include the effect of S/D junction capacitance.
5. Explain why the structures cannot operate as current sources even if they are in
saturation.
6. An NMOS device is operating in the subthreshold region has a ζ of 1.5. What
variation in πΆπΊπ results in a ten-fold change in πΌπ· ? If πΌπ· = 10 &micro; π΄, what is ππ ?
```