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Qioptiq Crystal Technology 2013 05

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Crystal Technology
1
2
02
Company Profile
Qioptiq designs and manufactures photonic products
precision manufacturing and responsive global
and solutions, serving a wide range of markets and
sourcing. Due to a series of acquisitions, Qioptiq
applications in the medical and life sciences, industrial
has an impressive history and pedigree, benefiting
manufacturing, defense and aerospace, and research
from the knowledge and experience of LINOS,
and development sectors.
Point Source, Rodenstock Precision Optics, Spindler
& Hoyer, Gsänger, Optem, Pilkington, Avimo and
The company is known for its high-quality standard
others. With a total workforce exceeding 2,300,
components, products and instruments, custom
Qioptiq has a worldwide presence with locations
modules and assemblies, leading-edge innovation,
throughout Europe, Asia and the USA.
1877
Rodenstock
founded
1898
Spindler & Hoyer
founded
1966
1969
1984
1991
Pilkington PE
Ltd. founded,
which later
becomes
THALES Optics
Gsänger
Optoelektronik
founded
Optem
International
founded
Point Source
founded
Medical &
Life Sciences
Index
Industrial
Manufacturing
Defense &
Aerospace
Company Profile
02 – 03
Core Competencies
04 – 05
LINOS Faraday Isolators – Introduction
06 – 09
Single Stage Faraday Isolators
10 – 17
Isolators with a Broad Tuning Rage
18 – 20
Two Stage Faraday Isolators
21 – 24
Questionnaire Faraday Isolators
25
LINOS Pockels Cells and
Laser Modulators – Introduction
26
LINOS Pockels Cells – Technical Information 27 – 31
Research &
Development
LINOS Pockels Cells
32 – 43
Questionnaire Pockels Cells
44
LINOS Laser Modulators –
Technical Information
45 – 46
Amplifiers
47 – 48
LINOS Laser Modulators
48 – 53
Questionnaire Laser Modulators
1996
LINOS founded
through the merger
of Spindler & Hoyer,
Steeg & Reuter
Präzisionsoptik,
Franke Optik and
Gsänger Optoelektronik
2000
Rodenstock
Präzisionsoptik
acquired
by LINOS
2001
2005
AVIMO Group
acquired
by THALES
Qioptiq
founded as
THALES sells
High Tech
Optics Group
54
2006 / 2007
2010
Qioptiq acquires
LINOS and Point Source
as “members of the
Qioptiq group”
The new Qioptiq
consolidates all
group members
under one brand
03
4
04
Core Competencies
Qioptiq offers the most comprehensive set of
technologies and knowledge to fulfill the demands
of almost any modern application in the field of
photonics.
Our decades of interdisciplinary experience in many
markets enable us to provide a portfolio of design,
technologies and manufacturing capabilities suitable
for your specific application. We can supply a
solution that will boost your competitive edge and
support your efforts to optimize your products. Our
components, modules and systems have superior
specifications – such as optimum optical resolution,
highest transmission, superior beam quality and
much more.
Design and development
• Optical system design including
non-linear optics
• Mechanical design
• Characterization of crystals
• FEM-analysis including magnetic
and thermal effects
• Standard and Sol-Gel coating
technologies
• Numerous product patents
• Lasers for biotechnology and
metrology
05
5
Materials
Assembly technologies
• Non-linear crystals: KD*P, BBO, RTP,
• Development of in-house processes
ADP, LiNbO3, TGG and others
• Various optical materials for UV to IR
applications
• Metals, magnets and various polymer
materials
for assembly of electro- and
magneto-optical systems
• Glueing technologies
• Flow-box assembly
LINOS Faraday Isolators
The LINOS Faraday Isolators
We have LINOS Faraday isolators for all wavelengths
in the range from 390 nm to 1310 nm, as well as
!
for 1550 nm. Isolators for other wavelengths can
Special features:
be implemented upon request. Many isolators can
We also have LINOS Microbench-compatible versions
be adjusted over a wide spectral range; variable
of our isolators for the most commonly used
frequency models can even be set for an interval
wavelengths.
of several hundred nanometers. At the same time,
We are always happy to implement custom designs
LINOS Faraday isolators are distinguished by high
and systems, even for one-time orders.
performance combined with the greatest possible
06
transmission. With more than 60 dB, our two-stage
Ideal areas of application:
isolators offer the best isolation available on the
Protecting
market.
decoupling oscillators and amplification systems;
The consistently high Qioptiq quality is assured by
injection locking, panels, and more.
lasers
from
damage
or
instability;
a combination of our many years of experience,
an intelligent design, modern engineering with
computer
simulations,
sophisticated
processing
and our ISO 9001 / ISO 13485 certified quality
management system. The result is the incomparable
value that distinguishes all our products – value you
can count on!
Qioptiq quality criteria:
Isolation > 30 dB (one-stage) or > 60 dB
(two-stage)
Transmission > 90% (one-stage) or > 80%
(two-stage)
All models can be used in wide
wavelength ranges
More information:
Contact us to receive the complete Qioptiq standard
offer in our LINOS catalog by mail, or look for it
under:
www.qioptiq-shop.com
LINOS Faraday Isolators
Overview
Single
SingleStage
Stage
Aperture
FI-600/1100-8SI
FI-420/460-5SV
FI-390/420-5SV
FI-1060-8SI
FI-600/1100-5SI
FI-500/820-5SV
FI-500/780-5SV
5 mm
FI-x-5SV
FI-405-5SV FI-488-5SV
FI-x-5SI
07
Broadband
FI-x-5SV BB
Microbench
FI-x-5SV MB
Low Power
3.5 mm
Compact
FI-488-5SC
Compact
FI-488-3SC
2 mm
Wavelength 400
Aperture
FI-x-5LP
FI-x-5SC
FI-x-3SC
FI-x-2SI
FI-x-2SV
500
600
700
800
900
1000
Two Stage
5 mm
Wavelength
Aperture
4 mm
Wavelength
LPE-Technology
1100
1200
al
yst
G
LINOS Faraday Isolators
TG
Cr
N
m
mu
Tra
xi
Ma
S
Characteristics
tor
ota
r
N
ize
lar
Po
R
ay
ad
Far
um
n
tio
inc
Ext
xim
Principle of Operation
Ma
Faraday isolators are optical components which
allow light travel in only one direction. Their mode of
operation is based on the non-linear Faraday effect
direction of the magnetic field (±45°) and the
(magneto rotation). In principle, the function of an
exit polarizer is also oriented at ±45°, so that the
optical isolator is analogue to that of an electrical
maximum beam intensity is transmitted.
diode.
If light of any polarization, but with a reversed direction
08
ion
iss
nsm
Faraday isolators are composed of three elements:
of propagation, meets the exit polarizer, it leaves
• Entrance Polarizer
at ±45°, passes through the Faraday rotator and is
• Faraday Rotator
again rotated by ±45°. The non-reciprocal nature of
• Exit Polarizer
the Faraday effect results in the direction of rotation
once again being counter clockwise as viewed in the
Thin film polarizers are commonly used as entrance
north/south direction of the magnetic field. Upon
and exit polarizers, typically in form of a special
leaving the Faraday rotator, the polarization has
polarizing beam splitter cube. These polarizers have
gone through two ±45° rotations resulting in a total
an extremely high extinction ratio and are designed
rotation of ±90°. In this polarization direction the
for use with high power lasers. The polarizer entrance
light is deflected laterally by the entrance polarizer.
and exit surfaces are coated with an antireflective
coating for the specified wavelength range. The key
Increased Isolation
element of the Faraday isolator is the Faraday rotator.
The maximum isolation of the Faraday isolator is
The rotator consists of a strong permanent magnet
limited by inhomogenities of the TGG crystal and
containing a crystal with a high Verdet constant.
the magnetic field. However, it is possible to square
the extinction ratio by placing two isolators in series
Light of any polarization entering the entrance
and by arranging the polarity of the two magnets to
polarizer exits as horizontally or vertically linearly
be opposite to each other. This way the polarization
polarized light. Since laser light is usually linearly
direction of the transmitted light remains unchanged
polarized, one can match the orientation of the
in the transmission direction and the effect of both
entrance polarizer and the laser by simply rotating
magnetic fields is enhanced. This arrangement also
the isolator. Light then passes through the Faraday
leads to a more compact isolator. The strength of
rotator. For most wavelengths the crystal is a Terbium
this effect depends on the distance between the
Gallium Garnet (TGG) crystal which is placed in a
two magnets and can be used to tune the isolator to
strong homogeneous magnetic field. Crystal length
different wavelengths. The adjustment is necessary
and magnetic field strength are adjusted so that
because the rotational angle of the TGG crystal is
the light polarization is rotated by 45° on exiting
wavelength and temperature dependent. Please see
the crystal. In the figure above the light is rotated
chapter “Two stage isolators” (page 21) for more
counter clockwise when viewed in the north/south
information.
LINOS Faraday Isolators
Advantages
High Isolation
Three sides of the entrance and exit polarizers are
The properties of the LINOS Faraday isolator are
usable and readily accessible for easy cleaning. The
determined by the quality of the optical elements and
degree of isolation can be adjusted in a wide range.
the uniformity of the magnetic field. The entrance and
exit polarizers exhibit a very high extinction ratio, so
Mounting Flexibility
that the isolation is mainly limited by inhomogenities
The LINOS Faraday isolators can be mounted directly
in the crystal material. Specially selected crystal
via threaded holes in the housing or via additional
materials with a high Verdet constant combined with
base plates or angle brackets.
permanent magnets with a high remanence enable
us to use shorter crystals and obtain an isolation
Applications
> 30 dB.
The ongoing development and refinement of
laser technology have created a need for optical
The radiation blocked by the entrance and exit
components that shield the laser resonator from
polarizers is not absorbed internally, but is deflected
back reflections. LINOS Faraday isolators provide
by 90° with respect to the beam direction. This
an efficient method of suppressing instabilities and
ensures a stable thermal operation even at higher
intensity fluctuations in laser devices.
laser power levels. The blocked radiation can be used
for other applications. All optical surfaces are slightly
Typical applications are:
tilted relative to the beam axis.
• Protection of the resonator in solid state and gas
lasers from back reflections
Low Insertion Loss
The high transmission, typically > 90%, is achieved
by using absorption free materials and antireflective
coatings with low residual reflectivity on all entrance
• Prevention of parasitic oscillation in multistage solid
state amplifiers
• Protection of diode lasers against back scatter and
extraneous light
and exit surfaces.
Large Aperture, Compact Design
compact design
All optical elements have been aligned to eliminate
low insertion
loss
beam shading and allow for easy adjustment.
Focusing is not necessary.
The compact design is achieved by using rare earth
magnets with the highest remanent magnetism and
large aperture
TGG crystal material with a high Verdet constant. The
isolator is suitable for divergent beams or in setups
with limited space. A minimal optical path length in
the isolator results in the lowest possible influence
on the image.
high isolation
09
LINOS Faraday Isolators
Single Stage Faraday Isolators
Technical Overview
Broadband option
The compact LINOS Faraday isolators in this chapter
On Broadband (BB) models the isolation is improved
use a single stage rotator. The length is kept to a
over a broadband spectrum by compensating
minimum with the use of powerful permanent
rotational dispersion of the TGG. This renders the
magnets in an optimized geometry. A 360° rotation
device usable over a wavelength range of ±50 nm
of the exit polarizer provides a maximum extinction
without additional adjustment. The isolators can be
over a certain range around the central wavelength.
mounted on rods, cylindrical mounts or by using the
The entrance and exit polarizers are polarizing beam
assembly surfaces so that the laser polarization can
splitter cubes. The blocked radiation is diverted by
be oriented horizontally or vertically.
90° and is readily available for other applications. At
30 dB, the specification of the isolator is sufficient
Applications
for most standard applications. For specialized
The following single stage LINOS Faraday isolators
applications, selected isolators with an extinction up
are suitable for all lasers operating in the range
to 45 dB are available.
especially:
An even higher extinction is provided by the two
stage isolator series.
• Ar+ and Kr+ lasers
• other Ion lasers
Wavelength tuning
• HeNe lasers
The Verdet constant of the TGG crystal is dependent
• other gas lasers
upon wavelength and temperature. In order to
• Dye lasers
compensate for different temperatures or different
• Diode lasers
wavelengths, it is possible to tune the isolator in
• Ti:Sapphire lasers
order to achieve maximum extinction. Tuning the
• Cr:LiCAF lasers
isolator is accomplished by rotating the holder of the
• Short pulse lasers
exit polarizer with respect to an engraved angular
• Mode-synchronized lasers
scale.
• Alexandrite lasers
The graph shows the typical reduction factor of the
transmission (Δλ) that is due to the tuning of the
isolator to a wavelength λ that is different from the
design wavelength λ0. The bar has a length that covers
the wavelength range for which 0.95 < T(Δλ) < 1.
The bullet indicates the design wavelength λ0. The
overall transmission of a Faraday isolator is equal to
Tt = T0 x T(Δλ), where T0 is a factor that represents
the transmission of the polarizers. At the design
wavelength the overall transmission of the Faraday
isolator is T0 > 90%
Reduction of transmission T(Δλ) [%]
10
Tuning of design wavelength Δλ
LINOS Faraday Isolators
Isolators with 2mm Aperture,
SV / SI-Series
FI-x-2SV / FI-x-2SI
• Isolation better than 30 dB / typically
38 - 42 dB over the entire wavelength
range, custom isolation values on request
• TGG crystal
• Rare earth magnet
• Output polarizer, 360° rotation, engraved
tuning scale
• Access to blocked beam
FI-x-2SV (x = 530, 630, 680 nm)
• Mounting 2SV-version: via two M3
threaded holes at the bottom side,
20 mm separation
11
• Damage threshold > 200 mJ / cm2 for
pulses of 10 ns (1064 nm)
• Damage threshold > 28 mJ / cm2 for
pulses of 280 fs (850 nm, 20 Hz)
FI-x-2SI (x = 760, 820, 990, 1060 nm)
FI-x-2SV / FI-x-2SI
Product
Isolation,
guaranteed /
typical
(dB)
Transmission
at design
wavelength
(%)
Transmission
at boundry
wavelength
(%)
Tuning
range
typical
(nm)
Aperture
Dimensions
Isolator
(mm)
(mm)
Order-No
FI-530-2SV
> 30/38-42
> 90
> 85
505 - 565
Ø2
25x25x37
84 50 1010 007
FI-630-2SV
> 30/38-42
> 90
> 85
595 - 670
Ø2
25x25x37
84 50 1011 000
FI-680-2SV
> 30/38-42
> 90
> 85
645 - 725
Ø2
25x25x37
84 50 1010 009
FI-760-2SI
> 30/38-42
> 90
> 85
720 - 810
Ø2
Ø 40x91
84 50 1034 007
FI-820-2SI
> 30/38-42
> 90
> 85
775 - 875
Ø2
Ø 40x91
84 50 1034 008
FI-990-2SI
> 30/38-42
> 90
> 85
940 - 1050
Ø2
Ø 40x91
84 50 1034 009
FI-1060-2SI
> 30/38-42
> 90
> 85
1010 - 1120
Ø2
Ø 40x91
84 50 1034 010
Subject to technical changes
LINOS Faraday Isolators
Isolators with 3.5 and 5mm
Aperture, SC-Series
FI-x-3SC / FI-x-5SC
• Extreme compact design
• Isolation better than 30 dB, typically
38-42 dB over the entire wavelength
range, custom isolation values on request
• TGG crystal
• Rare earth magnet
• Output polarizer, 360° rotation, engraved
tuning scale
• Access to blocked beam
FI-x-3SC (x = 488, 980, 1064, 1120 nm)
• Optional version with Brewster plate
polarizers (BP) on request for FI-1060-xSC,
isolation better than 30 dB
• Mounting:
via four M2 threaded holes at the bottom
side and at backside; 15 x 22.5 mm
separation (3SC-version, except
FI-1210-3SC);
49.5 x 22.5 mm separation
(FI-1210-3SC);
13 x 22.5 mm separation (5SC-version)
12
FI-x-5SC (x = 488, 930, 1064, 1120 nm)
• Damage threshold > 200 mJ / cm2 for
pulses of 10 ns (1064 nm)
• Damage threshold > 28 mJ / cm2 for
pulses of 280 fs (850 nm, 20 Hz)
FI-1210-3SC, -5SC
FI-x-3SC / FI-x-5SC
*
Product
Isolation,
guaranteed/
typical
(dB)
Transmission
at design
wavelength
(%)
Transmission
at boundry
wavelength
(%)
Tuning
range
typical
(nm)
Aperture
Dimensions
Order-No
(mm)
(mm)
FI-488-3SC*
> 35/38-42
> 90
-
478 - 498
Ø 3.5
40x40x60
FI-488-5SC*
> 35/38-42
> 90
-
478 - 498
Ø5
45x45x58
84 51 1090 0013
FI-980-3SC
> 30/38-42
> 90
> 85
925 - 1040
Ø 3.5
40x40x60
84 50 1036 004
84 51 1090 0016
FI-930-5SC
> 30/38-42
> 90
> 85
880 - 990
Ø5
45x45x58
84 50 1037 007
FI-1060-3SC
> 30/38-42
> 90
> 85
1010 - 1120
Ø 3.5
40x40x60
84 50 1036 001
84 50 1037 001
FI-1060-5SC
> 30/38-42
> 90
> 85
1010 - 1120
Ø5
45x45x58
FI-1120-3SC
> 30/38-42
> 90
> 85
1080 - 1170
Ø 3.5
40x40x60
84 51 1010 0057
FI-1120-5SC
> 30/38-42
> 90
> 85
1080 - 1170
Ø5
45x45x58
84 51 1010 0009
FI-1210-3SC
> 30/38-42
> 90
> 85
1160 - 1260
Ø 3.5
45x45x96
84 51 1010 0043
FI-1210-5SC
> 30/38-42
> 90
> 85
1160 - 1260
Ø5
45x45x96
84 51 1010 0053
optical contacted polarizers
Subject to technical changes
LINOS Faraday Isolators
Isolators with 5mm Aperture,
LP-Series
FI-x-5LP
• Faraday Isolator, low power
• Isolation better than 38 dB
• TGG crystal
• Rare earth magnet
• In- and output polarizer rotatable
• Mounting:
via two M4 threaded holes at the bottom
side, 30 mm separation
• Damage threshold > 25 W / cm2
FI-x-5LP (x = 630, 680, 780, 850 nm)
13
FI-x-5LP
Isolation,
guaranteed
(dB)
Transmission at
design wavelength
(%)
Tuning range
typical
(nm)
Aperture
FI-630-5LP
> 38
> 70
595 - 670
Ø5
41x40x40
84 51 1010 0098
FI-680-5LP
> 35
> 75
645 - 725
Ø5
41x40x40
84 51 1010 0100
(mm)
Dimension
Isolator
(mm)
Order-No
Product
FI-780-5LP
> 38
> 85
750 - 810
Ø5
41x40x40
84 51 1010 0091
FI-850-5LP
> 38
> 85
810 - 905
Ø5
41x40x40
84 51 1010 0099
Subject to technical changes
LINOS Faraday Isolators
Isolators with 5mm Aperture,
SV / SI-Series
FI-x-5SV / FI-x-5SI
• Isolation better than 30 dB, typically
38-42 dB over the entire wavelength
range, custom isolation values on request
• TGG crystal
• Rare earth magnet
• Output polarizer, 360° rotation, engraved
tuning scale
• Access to blocked beam
FI-x-5SV (x = 530, 630, 730, 780, 810, 850 nm)
14
• Optional version with Brewster plate
polarizers (BP) on request for FI-1060-5SI,
isolation better than 30 dB
• For upgrading to broadband-version refer
to chapter Special Isolators
• Mounting:
via two M4 threaded holes at the bottom
side and at the back side;
30 mm separation (5SV-version); 40 mm
separation (5SI-version); or via base plate
• Base plate included
FI-x-5SI (x = 488, 910, 960, 1000, 1060 nm)
• Damage threshold > 200 mJ / cm2 for
pulses of 10 ns (1064 nm)
• Damage threshold > 28 mJ / cm2 for
pulses of 280 fs (850 nm, 20 Hz)
FI-x-5SV / FI-x-5SI
Item Title
*
Isolation
guaranteed /
typical
(dB)
Transmission
at design
wavelength
(%)
Transmission
at boundry
wavelength
(%)
Tuning
range
typical
(nm)
Aperture
Dimensions
Isolator
(mm)
(mm)
Dimensions
base plate
(LxWxH)
(mm)
Order-No
FI-405-5SV*
> 35
> 88
-
400 - 420
Ø5
40x56x90
-
84 51 1010 0131
FI-488-5SI*
> 30/38-42
> 90
> 85
478 - 498
Ø5
58x58x95
70x58x8
84 50 1030 000
FI-530-5SV
> 30/38-42
> 90
> 85
505 - 565
Ø5
40x40x55
50x30x9.5
84 50 1013 002
FI-630-5SV
> 30/38-42
> 90
> 85
595 - 670
Ø5
40x40x55
50x30x9.5
84 50 1013 004
FI-730-5SV
> 30/38-42
> 90
> 85
690 - 780
Ø5
40x40x55
50x30x9.5
84 50 1013 034
FI-780-5SV
> 30/38-42
> 90
> 85
740 - 830
Ø5
40x40x55
50x30x9.5
84 50 1013 008
FI-810-5SV
> 30/38-42
> 90
> 85
765 - 865
Ø5
40x40x55
50x30x9.5
84 50 1013 033
FI-850-5SV
> 30/38-42
> 90
> 85
805 - 905
Ø5
40x40x55
50x30x9.5
84 50 1013 027
FI-910-5SI
> 30/38-42
> 90
> 85
860 - 970
Ø5
58x58x95
70x58x8
84 50 1031 002
FI-960-5SI
> 30/38-42
> 90
> 85
910 - 1020
Ø5
58x58x95
70x58x8
84 50 1031 006
FI-1000-5SI
> 30/38-42
> 90
> 85
950 - 1060
Ø5
58x58x95
70x58x8
84 50 1031 014
FI-1060-5SI
> 30/38-42
> 90
> 85
1010 - 1120
Ø5
58x58x95
70x58x8
84 50 1031 000
optical contacted polarizers
Subject to technical changes
LINOS Faraday Isolators
Isolators with 8mm Aperture,
SI-Series
FI-1060-8SI
• Isolation better than 30 dB, typically
38-42 dB over the entire wavelength
range, custom isolation values on request
• TGG crystal
• Rare earth magnet
• Output polarizer, 360° rotation, engraved
tuning scale
• Access to blocked beam
FI-1060-8SI
• Optional version with Brewster plate
polarizers (BP) on request, isolation better
than 30 dB
• Mounting:
via two M4 threaded holes at the bottom
side and at the back side;
55 mm separation, or via base plate
• Base plate included
15
• Damage threshold > 200 mJ / cm2 for
pulses of 10 ns (1064 nm)
• Damage threshold > 28 mJ / cm2 for
pulses of 280 fs (850 nm, 20 Hz)
FI-1060-8SI
Order-No
(mm)
Dimensions
base plate
(LxWxH)
(mm)
76x76x95
85x76x8
84 50 1032 000
Item
Title
Isolation,
guaranteed /
typical
(dB)
Transmission
at design
wavelength
(%)
Transmission
at boundary
wavelength
(%)
Tuning
range
typical
(nm)
Aperture
Dimensions
Isolator
(mm)
FI-1060-8SI
> 30/38-42
> 90
> 80
1010-1120
Ø8
Subject to technical changes
LINOS Faraday Isolators
Special Isolators with 5mm
Aperture, SV-Series
FI-x-5SV-MB / FI-x-5SV-BB
FI-x-5SV-MB (x = 530, 630, 730, 780, 810, 850 nm)
• Isolation better than 30 dB, typically
38-42 dB over the entire wavelength
range, custom isolation values on request
• TGG crystal
• Rare earth magnet
• Output polarizer, 360° rotation, engraved
tuning scale
• Access to blocked beam
• MB-version: compatible to the
Microbench system
• BB-version: for multiline lasers or
spectrally broadband lasers such as
fs-laser systems
• Mounting BB-version:
via two M4 threaded holes at the bottom
side and at the back side;
30 mm separation, or via base plate
• Base plate included
16
FI-x-5SV-BB (x = 780, 820 nm)
• Damage threshold > 200 mJ / cm2 for
pulses of 10 ns (1064 nm)
• Damage threshold > 28 mJ / cm2 for
pulses of 280 fs (850 nm, 20 Hz)
FI-x-5SV-MB / FI-x-5SV-BB
Order-No
(mm)
Dimensions
base plate
(LxWxH)
(mm)
42x36x65
-
84 50 1014 002
42x36x65
-
84 50 1014 004
Ø5
42x36x65
-
84 50 1014 034
740 - 830
Ø5
42x36x65
-
84 50 1014 008
> 85
765 - 865
Ø5
42x36x65
-
84 50 1014 033
> 90
> 85
805 - 905
Ø5
42x36x65
-
84 50 1014 001
> 30/38-42
> 90
> 85
725 - 825
Ø5
40x40x61
50x30x9.5
84 50 1024 008
> 30/38-42
> 90
> 85
760 - 860
Ø5
40x40x61
50x30x9.5
Product
Isolation
guaranteed/
typical
(dB)
Transmission
at design
wavelength
(%)
Transmission
at boundary
wavelength
(%)
Tuning
range
typical
(nm)
Aperture
Dimensions
Isolator
(mm)
FI-530-5SV-MB
> 30/38-42
> 90
> 85
505 - 565
Ø5
FI-630-5SV-MB
> 30/38-42
> 90
> 85
595 - 670
Ø5
FI-730-5SV-MB
> 30/38-42
> 90
> 85
690 - 780
FI-780-5SV-MB
> 30/38-42
> 90
> 85
FI-810-5SV-MB
> 30/38-42
> 90
FI-850-5SV-MB
> 30/38-42
FI-780-5SV-BB
FI-820-5SV-BB
84 50 1024 009
Subject to technical changes
LINOS Faraday Isolators
4mm Aperture Isolators with
Magnetooptical Crystal Film
FI-x-4SL
• Extremely small size
• Isolation better than 35 dB
• Faraday material: magneto-optical crystal
film in saturation
• Rare earth magnet
• Output polarizer, 360° rotation
• Access to blocked beam
FI-x-4SL (x = 1310, 1550 nm)
• Max. cw power: 2 W
• Damage threshold > 100 MW / cm2 for
pulses of 20 ns (1550 nm)
17
FI-x-4SL
Aperture
Dimensions
Isolator
Order-No
Item Title
Isolation,
guaranteed/
typical
(dB)
Transmission
at design
wavelength
(%)
Transmision
at boundary
wavelength
(%)
Tuning range
typical
(nm)
(mm)
(mm)
FI-1250-4SL
> 35
> 85
> 80
1200 - 1300
Ø4
14x23.5
84 51 102 000 04
FI-1310-4SL
> 35
> 90
> 85
1260 - 1360
Ø4
14x23.5
84 50 1071 000
FI-1550-4SL
> 35
> 90
> 85
1485 - 1615
Ø4
14x23.5
84 50 1072 000
Subject to technical changes
LINOS Faraday Isolators
Isolators with a Broad
Tuning Range
Technical Overview
Introduction
The function of the tunable LINOS Faraday isolators
in the following chapter is based on a single stage
isolator. Precision mechanics allow a continuous
adjustment of the interaction between the magnetic
field and the TGG crystal without moving any optical
components.
18
It is possible to set the rotation angle to any value
between 0° to 45° within the wavelength range
in order to study the effects of varying degrees
of feedback. Easy access to the blocked beam is
provided by polarizing beam splitter cubes, which
divert the blocked beam by 90°.
Precision mechanics allow the exact reproduction
of adjustments previously established. And with the
• Ar+ and Kr+ lasers
addition of an optional micrometer display, an angular
• other Ion lasers
resolution in the arc minute range is achievable. The
• HeNe lasers
incorporation of very powerful magnets ensures a
• Other gas lasers
compact and efficient design.
• Diode lasers
• Nd:YAG lasers
Operation
• Ti: Sapphire lasers
The isolator can be mounted on rods, cylindrical
• Cr:LiCAF lasers
mounts or by using the assembly surfaces so that
• Dye lasers
the laser polarization can be oriented horizontally or
• Alexandrite lasers
vertically. The entry and exit polarizers can be easily
• Mode-locked lasers
cleaned by removing the security rings.
• Short Pulse lasers
Applications
Faraday Rotator
These isolators are suitable for all lasers operating
For every laser line selected from 390 nm to a
in the 390-420 nm respectively in the 500-1100 nm
maximum of 1100 nm, every polarization direction
wavelength range especially for:
from 0° to 90° is precise and reproducible.
LINOS Faraday Isolators
5mm Aperture Tunable Isolators,
SV / SI-Series
FI-x/y-5SV / FI-600/1100-5SI
• Continuous adjustment for wavelength
without movement of optical parts
• Tunable with maximum transmission and
isolation over the complete wavelength
range
• Isolation better than 30 dB, typically
38 - 42 dB over the entire wavelength
range, custom isolation values on request
• TGG crystal
• Rare earth magnet
• Access to blocked beam
FI-x/y-5SV
19
• Mounting:
via two M4 threaded holes at the bottom
side and at the back side;
20 mm separation (5SV-version);
55 mm separation (5SI-version);
or via base plate, or via angle bracket
(5SV-version only)
• Base plate included
• Angle bracket included (5SV-version only)
FI-600/1100-5SI
• Damage threshold > 200 mJ / cm2 for
pulses of 10 ns (1064 nm)
• Damage threshold > 28 mJ / cm2 for
pulses of 280 fs (850 nm, 20 Hz)
FI-x/y-5SV, FI-x/y-5SI
Order-No
(mm)
Dimensions
base plate
(LxWxH)
(mm)
60x60x77
54x60x8
84 50 1046 000
60x60x77
54x60x8
84 50 1046 001
Ø5
60x60x77
54x60x8
84 50 1041 000
Ø5
80x80x125
88x90x8
Product
Isolation,
guaranteed /
typical
(dB)
Transmission
at design
wavelength
(%)
Tuning range
typical
Aperture
Dimensions
Isolator
(nm)
(mm)
FI-390/420-5SV
> 30/38-42
> 90
390-420
Ø5
FI-420/460-5SV
> 30/38-42
> 90
420-460
Ø5
FI-500/820-5SV
> 30/38-42
> 90
500-820
FI-600/1100-5SI
> 30/38-42
> 90
600-1100
84 50 1044 000
Subject to technical changes
High quality
A precise mechanics enables a continuous wavelength adjustment.
Without movement of the optics a broad wavelength range is
realized.
LINOS Faraday Isolators
8mm Aperture Tunable Isolator,
SI-Series
FI-600/1100-8SI
• Continuous adjustment for wavelength
without movement of optical parts
• Tunable with maximum transmission and
isolation over the complete wavelength
• Isolation better than 30 dB, typically
38-42 dB over the entire wavelength
range, custom isolation values on request
• TGG crystal
• Rare earth magnet
• Access to blocked beam
FI-600/1100-8SI
• Damage threshold > 200 mJ / cm2 for
pulses of 10 ns (1064 nm)
• Damage threshold > 28 mJ / cm2 for
pulses of 280 fs (850 nm, 20 Hz)
20
• Mounting:
via two M4 threaded holes at the bottom
side and at the back side;
55 mm separation, or via base plate
• Base plate included
FI-600/1100-8SI
Item Title
FI-600/1100-8SI
Isolation,
guaranteed/
typical
(dB)
Transmission
Tuning range
typical
Aperture
Dimensions
Isolator
(%)
(nm)
(mm)
(mm)
Dimensions
base plate
(LxWxH)
(mm)
> 30/38-42
> 90
600 - 1100
Ø8
80x80x125
88x90x8
Order-No
84 50 1045 000
Subject to technical changes
A closer look
The excellent quality of the high-precision LINOS electro-optics from
Qioptiq is a testament to decades of experience at both Gsänger and
Qioptiq. The 40-year history of these products is marked by immense
customer satisfaction, and has established Qioptiq as a leader in laser
technology.
Dr. Gsänger, founder of Gsänger Optics in Munich, was instrumental in the success of
the electro-optics.
Two Stage Faraday
Isolators
Technical Overview
FI-x-5TI and FI-x-5TV
Based on this special
Diode lasers are extremely sensitive to reflected
60 dB isolation at the
radiation. Standard Faraday isolators typically achieve
ctively within the
design wavelength, respectively
between 30 dB and 40 dB isolation, which in some
adjustment range of ±10 nm, makes Linos two stage
cases is not sufficient to suppress undesirable
Faraday isolators the best on the market.
design a guaranteed
feedback.
DLI, Overview
Our two stage LINOS Faraday isolators were
The isolators of the DLI-series were developed for
developed for the special requirements of diode
the special requirements of diode lasers in the visible
lasers and square the standard isolation of single stage
spectrum and combine the outstanding isolation of
Faraday isolators. At the heart of this development
a two stage isolator with the flexibility of a tunable
is the use of two coupled isolator stages together
isolator.
with the best polarizers available on the market.
The DLI isolators are easily integrated into an existing
This configuration combines the exit polarizer of
setup and can be adjusted to match any wavelength
the first stage with the entry polarizer of the second
without changing the laser polarization or displacing
stage to form one central polarizer.
the laser beam. The isolators can be coarsely tuned
by altering the effective magnetic field in the two
Arranging the polarity of the two magnets to be
isolator stages. A precise wavelength adjustment
opposite to each other results in two benefits:
is possible by rotating the central polarizer with
The polarization direction of the transmitted light
a micrometer set screw. The blocked radiation is
remains unchanged in the transmission direction
deflected out of the isolator at 90° with respect to
and the effect of both magnetic fields is enhanced.
the beam axis. It is not absorbed by the interior of
Therefore this configuration also leads to a more
the isolator, but is available at the side surfaces of the
compact isolator and a reduction of the optical path
polarizer and the exit window.
length which in turn enhances the optical quality of
the LINOS Faraday isolator.
DLI Injection Locking
The DLI injection version revolves this operating mode
All optical surfaces are antireflection coated and
and uses the exit window for in-coupling of the seed
the surfaces normal to the beam axis are tilted.
laser for injection locking while decoupling efficiently
The polarizers are mounted in a way that allows
the master and the slave laser from each other at
easy cleaning of the external optical surfaces. This
the same time. Like this stable mode locking (e.g. of
guarantees that the isolation is not reduced by
Ti:Sapphire lasers) is simplified.
residual reflections and scattering from the isolator.
21
LINOS Faraday Isolators
Applications
All two stage LINOS Faraday isolators are typically
used to improve the power and frequency stability of
diode lasers used in spectroscopy, interferometry and
precision control as well as in alignment applications.
Since the output polarization and the beam position
are conserved for all two stage LINOS Faraday
isolators, the influence of the smallest feedback
effects on the laser can be quantitatively examined.
22
LINOS Faraday Isolators
5mm Aperture Two Stage Faraday
Isolators (non-tunable), TV / TI-Serie
FI-x-TV / FI-x-TI
•
•
•
•
Two coupled isolator stages in series
Especially high isolation > 60 dB
TGG crystal
Rare earth magnet
High quality
High isolation (60 dB) and high
transmission for wavelengths
from 650 nm to 1060 nm is
guaranteed.
• TV-version: wavelength range ±10 nm
depending on the central wavelength
• TI-version: wavelength adjustable
• Customized central wavelength on
request
• Mounting TV-version:
via two M4 threaded holes at the bottom
side, 30 mm separation
• Mounting TI-version:
via two M4 threaded holes at the bottom
side or at the back side,
40 mm separation, or via base plate
• Base plate included
FI-x-TV
FI-x-TI
23
• Damage threshold > 200 mJ / cm2 for
pulses of 10 ns (1064 nm)
• Damage threshold > 28 mJ / cm2 for
pulses of 280 fs (850 nm, 20 Hz)
FI-x-TV / FI-x-TI
Product
Isolation,
guaranteed
Transmission
at design
wavelength (%)
(dB)
Order-No
(mm)
Dimensions
base plate
(LxWxH)
(mm)
Tuning range
typical
Aperture
Dimensions
Isolator
(nm)
(mm)
FI-650-TV
≥ 60
≥ 80
-
Ø5
40x40x106
-
84 51 1010 0044
FI-670-TV
≥ 60
≥ 80
-
Ø5
40x40x106
-
84 50 1060 020
FI-710-TV
≥ 60
≥ 80
-
Ø5
40x40x106
-
84 50 1060 019
FI-760-TV
≥ 60
≥ 80
-
Ø5
40x40x106
-
84 50 1060 017
FI-780-TV
≥ 60
≥ 80
-
Ø5
40x40x106
-
84 50 1060 002
FI-810-TV
≥ 60
≥ 80
-
Ø5
40x40x106
-
84 50 1060 003
FI-850-TV
≥ 60
≥ 80
-
Ø5
40x40x106
-
84 50 1060 009
FI-920-TI
≥ 60
≥ 80
885-960
Ø5
58x58x131
70x58x8
84 50 1061 001
FI-950-TI
≥ 60
≥ 80
915-990
Ø5
58x58x131
70x58x8
84 50 1061 002
FI-980-TI
≥ 60
≥ 80
940-1020
Ø5
58x58x131
70x58x8
84 50 1061 003
FI-1060-TI
≥ 60
≥ 80
1000-1080
Ø5
58x58x131
70x58x8
Other wavelengths available upon request
84 50 1061 004
Subject to technical changes
LINOS Faraday Isolators
5mm Aperture Two Stage Faraday
Isolators (tunable), DLI-Series
Tunable Diode Laser Isolators DLI
• Tunable with maximum isolation over
the complete wavelength range
• Two coupled isolator stages in series
• Especially high Isolation > 60 dB
• TGG crystal
• Rare earth magnet
• Input polarization = output
polarization
• Individually calibrated adjustment
curve supplied with each isolator
24
• Mounting:
via four M4 threaded holes at the bottom
side and at the back side;
40 x 40 mm separation, or via base plate
• Base plate included
• Special version for injection locking on
request
• Damage threshold > 200 mJ / cm2 for
pulses of 10 ns (1064 nm)
• Damage threshold > 28 mJ / cm2 for
pulses of 280 fs (850 nm, 20 Hz)
DLI-x
Order-No
Isolation,
guaranteed
(dB)
Transmission at design
wavelength
(%)
Tuning range
typical
(nm)
Aperture
DLI 1
≥ 60
≥ 80
754-890
Ø5
50x50x97
50x60x10
84 50 1003 000
DLI 2
≥ 60
≥ 80
610-700
Ø5
50x50x97
50x60x10
84 50 1002 000
DLI 3
≥ 60
≥ 80
650-760
Ø5
50x50x97
50x60x10
(mm)
Dimensions
Isolator
(mm)
Dimensions base
plate (LxWxH)
(mm)
Product
84 50 1001 000
Subject to technical changes
A closer look
An easy integration of DLI isolators is possible. They can be adjusted
easily without changing laser polarization or beam position. Special
versions for injection locking on request.
LINOS Faraday Isolators
Faraday Isolators - Questionnaire
QIOPTIQ Photonics GmbH & Co. KG
Crystal Technology
Hans-Riedl-Straße 9
85622 Feldkirchen
Germany
Phone
Fax
E-mail
Internet
+49(0)89 255 458-100
+49(0)89 255 458-895
laser@qioptiq.de
www.qioptiq.com
• Full Name: _____________________________________________
• Company Name: ________________________________________
• Address: _______________________________________________
• Zip Code: ______________________________________________
• Country: _______________________________________________
• Phone: ________________________________________________
• Fax: ___________________________________________________
• City: __________________________________________________
1. Laser Parameters at Location of Faraday Isolator
1.1 Wavelength [nm] ____________________________________________________________________________________________________
1.2 Type of Laser _______________________________________________________________________________________________________
1.3 Beam Diameter, 1/e2 [mm] _____________________________________________________________________________________________
1.4 CW / Pulsed ________________________________________________________________________________________________________
1.5 Laser Pulse Energy [mJ] _______________________________________________________________________________________________
1.6 Laser Pulse Duration [ps] ______________________________________________________________________________________________
1.7 Repetition Rate [Hz] __________________________________________________________________________________________________
2. Type of Faraday Isolator
2.1 Hard Aperture [mm] __________________________________________________________________________________________________
2.2 Transmission [%] ____________________________________________________________________________________________________
2.3 Extinction1) [dB] _____________________________________________________________________________________________________
1)
Single stage: > 30dB, typically 38 - 42dB. Two stage: > 60dB, custom isolation values on request
3. Miscellaneous
3.1 Temperature @ operation ____________________________________________________________________________________________3
3.2 Year [No. of Units] Target Price / Unit ____________________________________________________________________________________
4. Comments / Remarks:
______________________________________________________________________________________________________________________
______________________________________________________________________________________________________________________
______________________________________________________________________________________________________________________
25
LINOS Pockels Cells & Laser Modulators
The LINOS Pockels Cells
and Laser Modulators
Electro-optical
modulators
are
divided
into
modulators (for applications outside of laser cavity)
!
and Pockels cells (for applications within laser cavity)
Special features:
on the following pages.
On request we can customize products for
You can choose from a large selection of crystals for
wavelengths in the 250 nm to 3 μm range.
a variety of applications, apertures and laser outputs,
26
covering the entire wavelength range from 250 nm
Ideal areas of application:
to 3 μm. The consistently high Qioptiq quality and
Phase and intensity modulation; Q-switching; pulse
incomparable value of our products is assured by
picking.
a combination of our many years of experience,
an intelligent design, modern engineering with
computer simulations and sophisticated processing.
In addition we offer a broad range of fast and highperformance high-voltage drivers. For details, please
contact our staff from the customer service.
More information:
Qioptiq quality criteria:
Best possible extinction ratio for each crystal
High transmission
Patented isolation system minimizes
piezoelectric oscillation for exceptionally
precise switching operations (optional)
Contact us to receive the complete Qioptiq offer in
our LINOS catalog by mail, or look for it under:
www.qioptiq-shop.com
LINOS Pockels Cells & Laser Modulators
lators
Pockels Cells,
Technical Information
The Electro-Optic Effect
Q-Switching
The linear electro-optic effect, also known as the
Laser activity begins when the threshold condition
Pockels effect, describes the variation of the refractive
is met: the optical amplification for one round trip
index of an optical medium under the influence of an
in the laser resonator is greater than the losses
external electrical field. In this case certain crystals
(output coupling, diffraction, absorption, scattering).
become birefringent in the direction of the optical
The laser continues emitting until either the stored
axis which is isotropic without an applied voltage.
energy is exhausted, or the input from the pump
source stops. Only a fraction of the storage capacity
When linearly polarized light propagates along the
is effectively used in the operating mode. If it were
direction of the optical axis of the crystal, its state
possible to block the laser action long enough to
of polarization remains unchanged as long as no
store a maximum energy, then this energy could be
voltage is applied. When a voltage is applied, the
released in a very short time period.
light exits the crystal in a state of polarization which
is in general elliptical.
A method to accomplish this is called Q-switching.
The resonator quality, which represents a measure
This way phase plates can be realized in analogy
of the losses in the resonator, is kept low until the
to conventional polarization optics. Phase plates
maximum energy is stored. A rapid increase of the
introduce a phase shift between the ordinary and
resonator quality then takes the laser high above
the extraordinary beam. Unlike conventional optics,
threshold, and the stored energy can be released
the magnitude of the phase shift can be adjusted
in a very short time. The resonator quality can be
with an externally applied voltage and a λ/4 or λ/2
controlled as a function of time in a number of
retardation can be achieved at a given wavelength.
ways. In particular, deep modulation of the resonator
This presupposes that the plane of polarization of
quality is possible with components that influence
the incident light bisects the right angle between
the state of polarization of the light. Rotating the
the axes which have been electrically induced. In the
polarization plane of linearly polarized light by 90°,
longitudinal Pockels effect the direction of the light
the light can be guided out of the laser by a polarizer.
beam is parallel to the direction of the electric field.
In the transverse Pockels cell they are perpendicular
The modulation depth, apart from the homogeneity
to each other. The most common application of the
of the 90° rotation, is only determined by the degree
Pockels cell is the switching of the quality factor of a
of extinction of the polarizer. The linear electro-
laser cavity.
optical (Pockels) effect plays a predominant role
besides the linear magneto-optical (Faraday) and the
quadratic electro-optical (Kerr) effect. Typical electrooptic Q-switches operate in a so called λ/4 mode.
27
LINOS Pockels Cells
a) Off Q-Switching
5
Light emitted by the laser rod (1) is linearly polarized
1
by the polarizer (2). If a λ/4 voltage is applied to the
Pockels cell (3), then on exit, the light is circularly
2
polarized. After reflection from the resonator mirror
3
(4) and a further passage through the Pockels cell,
6
the light is once again polarized, but the plane of
4
polarization has been rotated by 90°. The light is
deflected out of the resonator at the polarizer, but the
resonator quality is low and the laser does not start
28
On Q-Switching
to oscillate. At the moment the maximum storage
capacity of the active medium has been reached,
Pulse Picking
the voltage of the Pockels cell is turned off very
Typically femto second lasers emit pulses with a
rapidly; the resonator quality increases immediately
repetition rate of several 10 MHz. However, many
and a very short laser pulse is emitted. The use of a
applications like regenerative amplifying require
polarizer can be omitted for active materials which
slower repetition rates. Here a Pockels cell can be
show polarization dependent amplification (e.g.
used as an optical switch: by applying ultra fast and
Nd:YAlO3, Alexandrite, Ruby, etc.).
precisely timed λ/2-voltage pulses on the Pockels cell,
the polarization of the laser light can be controlled
5
pulse wise. Thus, combined with a polarizer the
Pockels cell works as an optical gate.
1
Selection Criteria
2
The selection of the correct Q-switch for a given
3
application is determined by the excitation of the
4
laser, the required pulse parameters, the switching
voltage, the switching speed of the Pockels cell,
Off Q-Switching
the wavelength, polarization state and degree of
coherence of the light.
b) On Q-Switching
Unlike off Q-switching, a λ/4 plate (6) is used
Type of Excitation
between the Pockels cell (3) and the resonator mirror
Basically, both off and on Q-switching are equivalent
(4). If no voltage is applied to the Pockels cell the
in physical terms for both cw and for pulse pumped
laser resonator is blocked: no laser action takes place.
lasers. On Q-switching is, however, recommended
A voltage pulse opens the resonator and permits the
in cw operation because a high voltage pulse and
emission of laser light.
not a rapid high voltage switch-off is necessary to
generate a laser pulse. This method also extends the
LINOS Pockels Cells
life time of the cell. Over a long period of time, the
The CPC and SPC series cells are suitable for small,
continuous application of a high voltage would lead
compact lasers and especially for OEM applications.
to electrochemical degradation effects in the KD*P
They are available as dry cells and immersion cells.
crystal. We advice the use of an on Q-switching
driver.
The level of deuterium content in an electro-optic
crystal influences the spectral position of the infrared
Off Q-switching is more advantageous for lasers
edge. The higher the deuterium level the further the
stimulated with flash lamps because the λ/4 plate is
absorption edge is shifted into the infrared spectral
not required. In order to prevent the electrochemical
region: for Nd:YAG at 1064 nm, the laser absorption
degradation of the KD*P crystal in the off Q-switching
decreases. Crystals, which are deuterated to > 98%,
mode we recommend a trigger scheme in which the
are available for lasers with a high repetition rate or a
high voltage is turned off between the flashlamp
high average output power.
pulses and turned on to close the laser cavity before
the onset of the pump pulse.
Pockels Cell Switching Voltage
Using double Pockels cells can half the switching
The CPC- and SPC-series cells are recommended for
voltage. This is achieved by switching two crystals
diode pumped solid state lasers. These cells are ultra
electrically in parallel and optically in series. The
compact and will operate in a short length resonator:
damage threshold is very high and the cells are
this is necessary to achieve very short laser pulses.
mainly used outside the resonator.
Pulse Parameters
Electro-optic material
The LM n, LM n IM, and LM n SG series cells are
The selection of the electro-optic material depends
recommended for lasers with a power density of
on its transmission range. Further on, the laser
up to 500 MW / cm². The LM n and LM n SG cells
parameters as well as the application have to be
are used for lasers with very high amplification. The
taken into account.
SG cells with Sol-Gel technology have the same
transmission as the immersion cells and both are
For wavelengths from 0.25 μm to 1.1 μm, longitudinal
typically used when a higher transmission is required.
Pockels cells made of KD*P and a deuterium content
At high pulse energies LMx cells are preferred.
of 95% should be considered. If the deuterium
content is higher the absorption edge of the material
Brewster Pockels cells are recommended for lasers
is shifted further into the infrared. KD*P crystal cells
with low amplification, such as Alexandrite lasers.
with a deuterium content > 98% can be used up to
The passive resonator losses are minimal due to a
1.3 μm.
high transmission of 99%.
KD*P can be grown with high optical uniformity and
is therefore recommended for large apertures.
29
LINOS Pockels Cells
The spectral window of BBO also ranges from
cell will be determined by these factors. Thin film
0.25 μm to 1.3 μm. In addition, BBO crystals provide a
polarizers are used and the substrate is mounted at
low dielectric constant and a high damage threshold.
the Brewster angle. A parallel beam displacement
Therefore, BBO is recommended for lasers with high
of 1 mm results from this configuration and can be
repetition rate and high average powers.
compensated by adjusting the resonator.
RTP, with an optical bandwidth from 0.5 μm up to
1.5 μm, combines low switching voltage and high
laser induced damage threshold. Together with
its relative insensitivity for Piezo effects RTP is best
30
suited for precise switching in high repetition rate
lasers with super fast voltage drivers.
For wavelengths from 1.5 μm up to 3 μm we
recommend LiNbO3.
Suppression of Piezo effects
Like any other insulating material electro optical
crystals show Piezo effects when high voltage is
applied. The extent of the Piezo ringing depends
on the electro optic material and usually its effect
on the extinction ratio is negligible when used for
Q-switching. However, for pulse picking applications,
which require highly precise switching behaviour,
Qioptiq offers specially Piezo damped Pockels cells
which suppress these ringing effects efficiently.
State of Polarization
The MIQS- and CIQS-series cells are supplied with an
integrated polarizer: the alignment of the Pockels cell
relative to the polarizer thus becomes unnecessary.
The rotational position of the cell relative to the
resonator axis can be chosen at will. However, should
the polarization state of the light in the resonator be
determined by other components, such as anisotropic
amplification of the laser crystal or Brewster surfaces
of the laser rod, then the rotational position of the
LINOS Pockels Cells
Product Overview
31
LINOS Pockels Cells
KD*P Pockels Cells LM Series
•
•
•
•
KD*P-based Pockels cell
High crystal deuteration (typical) > 98%
Wave front deformation: < λ/4
Damage threshold: > 500 MW / cm2
at 1064 nm, 10 ns, 1 Hz (typical, not
guaranteed)
• Optionally available as dry, immersion
(IM) or Sol-Gel (SG) version
• Optionally available with λ/4 disk:
LM n (IM) (SG) WP
• Optionally available with dust protection
caps for hermetically sealed installation:
LM n (IM) (SG) DT
LM 8 (IM) (SG)
• Other specifications upon request
• Please state the applied wavelength
when ordering
32
LM 10 (IM) (SG)
LM 12 (IM) (SG)
LM 16 (IM) (SG)
KD*P Pockels Cells LM Series
Product
Clear Aperture
(mm)
Transmission typical
(%)
Extinction ratio
(voltage-free)
λ/4 voltage
Capacity
(pF)
Order-No
LM 8
Ø8
91
> 1000:1
3.2 kV at 1064 nm, 20°C
4
84 50 3001 005
LM 8 IM
Ø8
98
> 1000:1
3.2 kV at 1064 nm, 20°C
4
84 50 3011 002
LM 8 SG
Ø 7.5
98
> 1000:1
3.2 kV at 1064 nm, 20°C
4
84 50 3006 001
LM 10
Ø 10
91
> 1000:1
3.2 kV at 1064 nm, 20°C
5
84 50 3002 001
LM 10 IM
Ø 10
98
> 1000:1
3.2 kV at 1064 nm, 20°C
5
84 50 3012 001
LM 10 SG
Ø 9.5
98
> 1000:1
3.2 kV at 1064 nm, 20°C
5
84 50 3007 005
LM 12
Ø 12
91
> 1000:1
3.2 kV at 1064 nm, 20°C
6
84 50 3003 001
LM 12 IM
Ø 12
98
> 1000:1
3.2 kV at 1064 nm, 20°C
6
84 50 3013 003
LM 12 SG
Ø 11
98
> 1000:1
3.2 kV at 1064 nm, 20°C
6
84 50 3008 001
LM 16
Ø 16
91
> 1000:1
3.2 kV at 1064 nm, 20°C
6
84 50 3004 000
LM 16 IM
Ø 16
98
> 1000:1
3.2 kV at 1064 nm, 20°C
6
84 50 3014 000
LM 16 SG
Ø 15
98
> 1000:1
3.2 kV at 1064 nm, 20°C
6
84 50 3009 000
All order numbers valid for 1064 nm.
Subject to technical changes
LINOS Pockels Cells
KD*P Pockels Cells MIQS 8 Series
• KD*P-based Pockels cell
• High crystal deuteration (typical) > 98%
• With integrated, pre-adjusted Brewster
polarizer
• Compact design for OEM applications
• Wave front deformation: < λ/4
• Damage threshold: > 500 MW / cm2
at 1064 nm, 10 ns, 1 Hz (typical, not
guaranteed)
MIQS 8 (IM) (SG)
• Optionally available as dry, immersion
(IM) or Sol-Gel (SG) version
• Optionally available with λ/4 disk:
MIQS 8 (IM) (SG) WP
• Other specifications upon request
• Please state the applied wavelength
when ordering
33
KD*P Pockels Cells MIQS 8 Series
Product
Clear aperture
(mm)
Transmission
typical (%)
Extinction ratio
(voltage-free)
λ/4 voltage
Capacity
(pF)
Order-No
MIQS 8
Ø8
88
> 500:1
3.2 kV at 1064 nm, 20°C
4
84 50 3070 001
MIQS 8 IM
Ø8
95
> 500:1
3.2 kV at 1064 nm, 20°C
4
84 50 3071 017
MIQS 8 SG
Ø 7.5
95
> 500:1
3.2 kV at 1064 nm, 20°C
4
All order numbers valid for 1064 nm.
84 50 3071 024
Subject to technical changes
LINOS Pockels Cells
KD*P-Pockels Cells CPC Series
•
•
•
•
•
KD*P-based Pockels cell
High crystal deuteration (typical) > 98%
Compact design for OEM applications
Wave front deformation: < λ/4
Damage threshold: > 500 MW / cm2
at 1064 nm, 10 ns, 1 Hz (typical, not
guaranteed)
• Optionally available as dry, immersion (IM)
or Sol-Gel (SG) version
• Optionally available with λ/4 disk:
CPC n (IM) (SG) WP
CPC 8 (IM) (SG)
• Other specifications upon request
• Please state the applied wavelength
when ordering
34
CPC 10 (IM) (SG)
CPC 12 (IM) (SG)
KD*P Pockels Cells CPC Series
Product
Clear Aperture
(mm)
Transmission
typical (%)
Extinction ratio1)
(voltage-free)
λ/4 voltage
Capacity
(pF)
Order-No
CPC 8
Ø8
91
> 3000:1
3.2 kV at 1064 nm, 20°C
4
84 50 3091 001
CPC 8 IM
Ø8
98
> 3000:1
3.2 kV at 1064 nm, 20°C
4
84 50 3092 001
CPC 8 SG
Ø 7.5
98
> 3000:1
3.2 kV at 1064 nm, 20°C
4
84 50 3093 000
CPC 10
Ø 10
91
> 3000:1
3.2 kV at 1064 nm, 20°C
6
84 50 3094 000
CPC 10 IM
Ø 10
98
> 3000:1
3.2 kV at 1064 nm, 20°C
6
84 50 3094 001
CPC 10 SG
Ø 9.5
98
> 3000:1
3.2 kV at 1064 nm, 20°C
6
84 50 3096 000
CPC 12
Ø 12
91
> 3000:1
3.2 kV at 1064 nm, 20°C
8
84 50 3097 000
CPC 12 IM
Ø 12
98
> 3000:1
3.2 kV at 1064 nm, 20°C
8
84 50 3098 000
CPC 12 SG
Ø 11
98
> 3000:1
3.2 kV at 1064 nm, 20°C
8
> 1000 : 1 λ/2-voltage applied
All order numbers valid for 1064 nm.
1)
84 50 3099 000
Subject to technical changes
LINOS Pockels Cells
KD*P Pockels Cells CIQS Series
• KD*P-based Pockels cell
• High crystal deuteration (typical) > 98%
• With integrated, pre-adjusted Brewster
polarizer
• Compact design for OEM applications
• Wave front deformation: < λ/4
• Damage threshold: > 500 MW / cm2
at 1064 nm, 10 ns, 1 Hz (typical, not
guaranteed)
CIQS 8 (IM) (SG)
• Optionally available as dry, immersion
(IM) or Sol-Gel (SG) version
• Optionally available with λ/4 disk:
CIQS n (IM) (SG) WP
• Other specifications upon request
• Please state the applied wavelength
when ordering
CIQS 10 (IM) (SG)
CIQS 12 (IM) (SG)
KD*P Pockels Cells CIQS Series
Product
Clear Aperture
(mm)
Transmission
typical (%)
Extinction ratio
(voltage-free)
λ/4 voltage
Capacity
(pF)
Order-No
CIQS 8
Ø8
88
> 500:1
3.2 kV at 1064 nm, 20°C
4
84 50 3070 000
CIQS 8 IM
Ø8
95
> 500:1
3.2 kV at 1064 nm, 20°C
4
84 51 3010 0004
CIQS 8 SG
Ø 7.5
95
> 500:1
3.2 kV at 1064 nm, 20°C
4
84 50 3071 022
CIQS 10
Ø 10
88
> 500:1
3.2 kV at 1064 nm, 20°C
6
84 50 3073 000
CIQS 10 IM
Ø 10
95
> 500:1
3.2 kV at 1064 nm, 20°C
6
84 50 3074 001
CIQS 10 SG
Ø 9.5
95
> 500:1
3.2 kV at 1064 nm, 20°C
6
84 50 3075 001
CIQS 12
Ø 12
88
> 500:1
3.2 kV at 1064 nm, 20°C
8
84 50 3076 000
CIQS 12 IM
Ø 12
95
> 500:1
3.2 kV at 1064 nm, 20°C
8
84 50 3077 000
CIQS 12 SG
Ø 11
95
> 500:1
3.2 kV at 1064 nm, 20°C
8
All order numbers valid for 1064 nm.
84 50 3078 002
Subject to technical changes
35
LINOS Pockels Cells
KD*P Pockels Cells SPC 4 Series
•
•
•
•
•
KD*P-based Pockels cell
High crystal deuteration (typical) > 98%
Very compact design for OEM applications
Wave front deformation: < λ/4
Damage threshold: > 500 MW / cm2
at 1064 nm, 10 ns, 1 Hz (typical, not
guaranteed)
• Optionally available as dry, immersion
(IM) or Sol-Gel (SG) version
• Optionally available with integrated,
pre-adjusted Brewster polarizer
• Optionally available with λ/4 disk:
SPC4 (IM) (SG) WP
SPC 4 (IM) (SG)
• Other specifications upon request
• Please state applied wavelength when
ordering
36
KD*P Pockels Cells SPC 4 Series
Transmission
typical (%)
Capacity (pF)
Order-No
3.2 kV at 1064 nm, 20°C
2
84 50 3036 007
3.2 kV at 1064 nm, 20°C
2
84 50 3036 004
Clear aperture
(mm)
SPC 4
Ø4
91
> 3000:1
SPC 4 IM
Ø4
98
> 3000:1
SPC 4 SG
Ø 3.5
98
> 3000:1
3.2 kV at 1064 nm, 20°C
2
All order numbers valid for 1064 nm, maximum voltage 4 kV.
A closer look
The compact size of approx.
13 x 15 x 16 mm² enables size
critical OEM-applications.
Extinction ratio
(voltage-free)
λ/4 voltage
Product
84 50 3052 001
Subject to technical changes
LINOS Pockels Cells
KD*P Double Pockels Cells DPZ
Series
•
•
•
•
KD*P-based Pockels cell
High crystal deuteration (typical) > 98%
Two crystals in series
Damage threshold: > 500 MW / cm2
at 1064 nm, 10 ns, 1 Hz (typical, not
guaranteed)
• Optionally available as dry, immersion
(IM) or Sol-Gel (SG) version
• λ/4 voltage: 1.6 kV at 1064 nm, 20°C
DPZ 8
• Other specifications on request
• Please state the applied wavelength
when ordering
37
DPZ 8 (IM)
DPZ 8 (SG)
KD*P Double Pockels Cells DPZ Series
Product
Clear aperture
(mm)
Transmission
typical (%)
Extinction ratio
(voltage-free)
λ/2- voltage
Capacity
(pF)
Order-No
DPZ 8
Ø8
84
> 500:1
3.2 kV at 1064 nm, 20°C
8
84 50 3041 001
DPZ 8 IM
Ø8
95
> 1000:1
3.2 kV at 1064 nm, 20°C
8
84 50 3042 000
DPZ 8 SG
Ø 7.5
95
> 1000:1
3.2 kV at 1064 nm, 20°C
8
All order numbers valid for 1064 nm.
84 50 3043 005
Subject to technical changes
LINOS Pockels Cells
KD*P Brewster Pockels Cell BPC 8
•
•
•
•
•
KD*P-based Pockels cell
High crystal deuteration (typical) > 98%
Crystal with Brewster angle cut
No coatings
High transmission for lasers with low
amplification
• Beam offset: 8.4 mm
• Wave front deformation: < λ/4
• Damage threshold: > 500 MW / cm2
at 1064 nm, 10 ns, 1 Hz (typical, not
guaranteed)
• Other specifications on request
• Please state the applied wavelength
when ordering
38
KD*P Brewster Pockels Cell BPC 8
Product
Clear aperture
(mm)
Transmission
typical (%)
Extinction ratio
(voltage-free)
λ/4 voltage
Capacity (pF)
Order-No
BPC 8
Ø 7.4
99
> 1000:1
2.5 kV at 755 nm, 20°C
4
84 50 3034 001
Subject to technical changes
LINOS Pockels Cells
LiNbO3 Pockels Cells
• LiNbO3-based Pockels cell
• Preferably for Er:YAG-, Ho:YAG-,
Tm:YAG-laser
• For wavelengths up to 3 μm
• Brewster cells BPZ 5 IR for laser with low
amplification
• Compact design
• Wave front deformation: < λ/4
• Damage threshold: > 100 MW / cm2
at 1064 nm, 10 ns, 1 Hz (typical, not
guaranteed)
LM 7 IR
• Other specifications on request
• Please state the applied wavelength
when ordering
39
LM 9 IR
BPZ 5 IR
LiNbO3 Pockels Cells
1)
Product
Clear aperture (mm)
Transmission typical (%)
Extinction ratio (voltage-free)
λ/4-voltage (kV)
Order-No
LM 7 IR1)
7.45 x 7.45
> 98
>100:1
3kV1)
84 50 3030 001
LM 9 IR2)
9x9
> 98
>100:1
4.5kV2)
84 50 3032 001
BPZ 5 IR
5x5
> 99
>100:1
1.9kV1)
2 μm wavelength
2)
3 μm wavelength
84 51 3040 0003
Subject to technical changes
LINOS Pockels Cells
BBO Pockels Cells BBPC Series
• BBO-based Pockels cell
• Suited for Q-switch applications with
high repetition rates
• Wave front deformation: < λ/4
• Damage threshold: > 300 MW / cm2
at 1064 nm, 10 ns, 1 Hz (typical, not
guaranteed)
• Optionally available with integrated
Brewster polarizer: BBPC n BP
• Optionally available with integrated
λ/ 4 disk: BBPC n WP
• Optionally available with Piezo
attenuator: BBPC n pp
BBPC
• Other specifications on request
• Please state the applied wavelength
when ordering
40
BBO Pockels Cells BBPC Series
1)
Product
Clear aperture
(mm)
Transmission typical
(%)
Extinction ratio
(voltage-free)
λ/4-voltage1)
Capacity
(pF)
Order-No
BBPC 3
Ø2.6
98
>1000:1
3.6kV
4
84 50 3083 012
BBPC 4
Ø3.6
98
>1000:1
4.8kV
4
84 50 3083 008
BBPC 5
Ø4.6
98
>1000:1
6.0kV
4
DC at 1064 nm
All order numbers valid for 1064 nm.
84 50 3083 020
Subject to technical changes
LINOS Pockels Cells
BBO Double Pockels Cells
DBBPC Series
•
•
•
•
BBO-based double Pockels cell
Two crystals in series
With Piezo attenuator
Suited for Q-switch applications with
high repetition rates
• Damage threshold: > 300 MW / cm2
at 1064 nm, 10 ns, 1 kHz (typical, not
guaranteed)
DBBPC
• Other specifications on request
• Please state the applied wavelength
when ordering
41
Double BBO Pockels Cells DBBPC Series
Product
Clear aperture
(mm)
Transmission typical
(%)
Extinction ratio
(voltage-free)
λ/4-voltage1)
Capacity
(pF)
Order-No
DBBPC 3
Ø2.6
98
> 1000:1
1.8kV
8
84 51 3020 0010
DBBPC 4
Ø3.6
98
> 1000:1
2.4kV
8
84 51 3020 0011
DBBPC 5
Ø4.6
98
> 1000:1
3.0kV
8
84 51 3020 0001
DBBPC 6
Ø5.6
98
> 1000:1
3.6kV
8
1)
DC at 1064 nm
All order numbers valid for 1064 nm.
High quality
All pockels cells series DBBPC
feature a piezodamping and are
ideally suited for applications
which require a precise switch.
84 51 3020 0008
Subject to technical changes
LINOS Pockels Cells
RTPC Pockels Cells Series
• RTP-based Pockels cell
• Suited for Q-switch applications with
high repetition rates
• Two crystals in compensation layout
• Wave front deformation: < λ/4
• Damage threshold: > 600 MW / cm2
at 1064 nm, 10 ns, 1 Hz (typical, not
guaranteed)
• SC version with short crystals
• Optionally available with integrated
Brewster polarizer: RTPC n BP
• Optionally available with integrated
λ/4 disk: RTPC n WP
RTPC 4 SC
• Other specifications on request
• Please state the applied wavelength
when ordering
42
RTPC 3, RTPC 4
RTPC Pockels Cells Series
Product
Clear aperture
(mm)
Transmission
typical (%)
Extinction ratio
(voltage-free)
λ/4 voltage1)
Capacity
(pF)
Order-No
RTPC 3
Ø2.6
98
> 200:1
0.5kV
3
84 50 3080 018
RTPC 4 SC
Ø3.6
98
> 200:1
1.3kV
3
84 50 3080 021
RTPC 4
Ø3.6
98
> 200:1
0.65kV
3
1)
DC at 1064 nm
All order numbers valid for 1064 nm
High quality
An extremely low switch-voltage combined with high damaging
threshold enable applications where a precise switching with high
repetition rates and very fast drivers is essential.
84 51 3030 0007
Subject to technical changes
LINOS Pockels Cells
Pockels Cells Positioner
• Compact and stable design
• Easy adjustment of yaw, pitch and
rotation
• Adjustment via fine thread screws
• For Pockels cells with a diameter of up
to 35 mm
• Optionally special OEM modifications
available
Positioner 25
(Pockels cell shown not included)
43
Positioner 35
(Pockels cells shown not included)
Pockels Cells Positioner
Product
Diameter Pockels cell
(mm)
Tilt range
Beam height
(mm)
Dimensions
(mm3)
Order-No
Positioner 25
12.7
±4°
24
46 x 46 x 40
84 50 3021 127
Positioner 25
19
±4°
24
46 x 46 x 40
84 50 3021 190
Positioner 25
21
±4°
24
46 x 46 x 40
84 50 3021 210
Positioner 25
23
±4°
24
46 x 46 x 40
84 50 3021 230
Positioner 25
25
±4°
24
46 x 46 x 40
84 50 3021 250
Positioner 25
25.4
±4°
24
46 x 46 x 40
84 50 3021 254
Positioner 35
35
±4°
24
56 x 54 x 40
84 50 3021 350
Subject to technical changes
LINOS Pockels Cells
Pockels Cells - Questionnaire
QIOPTIQ Photonics GmbH & Co. KG
Crystal Technology
Hans-Riedl-Straße 9
85622 Feldkirchen
Germany
Phone
Fax
E-mail
Internet
+49(0)89 255 458-100
+49(0)89 255 458-895
laser@qioptiq.de
www.qioptiq.com
• Full Name: _____________________________________________
• Company Name: ________________________________________
• Address: _______________________________________________
• Zip Code: ______________________________________________
• Country: _______________________________________________
• Phone: ________________________________________________
• Fax: ___________________________________________________
• City: __________________________________________________
1. Laser Pulse Parameter at Location of Pockels Cell1)
44
1.1 Wavelength [nm] ____________________________________________________________________________________________________
1.2 Laser Active Medium ________________________________________________________________________________________________
1.3 Beam Diameter, 1/e2 [mm] ____________________________________________________________________________________________
1.4 Laser Pulse Energy1) __________________________________________________________________________________________________
1.5 Laser Pulse Duration _________________________________________________________________________________________________
1.6 Operating mode, (Mode Locking, Q-switch,
Pulse Picking, Intensity Modulation) ____________________________________________________________________________________
2. Type of Pockels Cell
2.1 Hard Aperture [mm] _________________________________________________________________________________________________
2.2 Transmission[%] ____________________________________________________________________________________________________
2.3 Maximum Extinction [1:x] _____________________________________________________________________________________________
2.4 Crystal [KD*P, BBO, RTP] _____________________________________________________________________________________________
2.5 Operation mode (single pass or double pass)[λ/4 or λ/2] ___________________________________________________________________
3. Timing Requirements of High Voltage Switch
3.1 Regenerative / Pulse Picker / Q - Switch __________________________________________________________________________________
3.2 For Regenerative Amplifier / Pulse Picker:
- Trigger Electronics for RVD required [Yes/No] ___________________________________________________________________________
- Repetition Rate of Master Osc. [MHz] _________________________________________________________________________________
- Repetition Rate of Regen. Amp. [kHz] _________________________________________________________________________________
- max. rise / fall time of rectangular HV pulse [ns] _________________________________________________________________________
- min. / max. temporal width of rectangular HV pulse [ns] __________________________________________________________________
- range of plateau voltage ____________________________________________________________________________________________
3.3 For Q-switched Laser
- ON / OFF Q-Switching _____________________________________________________________________________________________
- Rep. Rate of Q-switched Laser [kHz] _________________________________________________________________________________
4. Accessories
4.1 Brewsterplate Polarizer [Yes / No] ______________________________________________________________________________________
4.2 λ/4 - Plate (for ON-Q-Switching) [Yes / No] ______________________________________________________________________________
5. Miscellaneous
5.1 Temperature @ operation [°C] _________________________________________________________________________________________
5.2 Humidity @ operation [%] ____________________________________________________________________________________________
5.3 Year [No. of Units] Target Price / Unit _________________________________________________________________________________
6. Comments / Remarks:
______________________________________________________________________________________________________________________
______________________________________________________________________________________________________________________
______________________________________________________________________________________________________________________
1)
EPC = EOP/(1-R), EPC: pulse energy at location of Pockels cell;
EOP: pulse energy at output of laser; R: reflectivity of output coupler;
regenerative amplifier: at the end of the amplification cycle
LINOS Laser Modulators
Laser Modulators
Technical Overview
If the laser beam is polarized in the direction of
Electro-optical crystals are characterized by their
the optical axis, no polarization rotation, but pure
ability to change optical path length in function of an
phase retardation will occur. In principle this allows
applied external voltage. This change depends on the
the user to operate the LM 0202 modulator as a
direction of polarization of the irradiated light. At λ/2
phase modulator. In this configuration, optimized
voltage, the path length difference of orthogonally
for minimum background retardation, two of the
polarized beams is just half of the wavelength. With
four crystals are electro-optically active for phase
a suitable orientation of the crystals, the polarization
modulation. A special model, LM 0202 PHAS, is
direction of the irradiated light is rotated 90°: in this
available with a crystal configuration that uses all
state the light is extinguished by a polarizer. Varying
four crystals for phase modulation.
45
the applied voltage allows quick modulation of the
laser beam intensity. The performance of an electro-
The PM 25 phase modulator, is a Brewster modulator
optic modulator can be understood very simply as
of high optical quality and should be used for
that of a retardation plate with electrically adjustable
loss sensitive applications, especially intracavity
retardation.
modulation.
Mounting
the
modulator
in
the
resonator is simple, as there is no beam deviation or
LM 0202 series modulators use the transverse
displacement.
electro-optical effect: the direction of the light beam
and electric field are orthogonal. In this configuration,
All modulators use electro-optical crystals that
long crystals with a small cross section have a low
possess strong natural birefringence. The crystals are
halfwave voltage
used in order of compensation and there is no beam
deviation or displacement.
Since most of the electro-optical crystals operate
with a strong background of natural birefringence,
Electro-optic modulators generally require linearly
a compensation scheme is used. Each modulator in
polarized laser light. If the laser light is not sufficiently
the LM 0202 series has four crystals as a matched
polarized by itself, an additional polarizer must be
ensemble.
used.
These
crystals
are
fabricated
with
deviations in length less than 100 nm. The crystals are
operated optically in series and electrically parallel.
The LM 0202 P intensity modulator has an integrated
polarizer that is used as an analyzer.
The crystal orientation of the LM 0202 and LM 0202P
modulators has been optimized to minimize the
The modulator voltage input plugs are isolated from
retardation caused by natural birefringence. Just as in
the housing and directly connected to the crystals. A
an ordinary retardation plate, the polarization of the
change of the laser intensity can be observed when
laser beam has to be adjusted at 45° to the optical
the applied voltage is changed. By subsequently
axis in order to achieve a proper 90° rotation.
adjusting voltage and rotation, an extinction better
than 250:1 can be achieved. Selected models with
better extinction ratios are available on request.
LINOS Laser Modulators
Operating an electro-optical modulator between
crossed, or parallel, polarizers yields an intensity
variation given by the following formula:
Applications
The LM 0202 or LM 13 series electro-optical
2
I = Io · sin (U/Uλ/2 · π /2)
modulators are typically used when intensity,
Uλ/2 - half wave voltage
power, phase or polarization state modulation is
Io - input intensity
required. The devices are ideal for continuous or
U - signal voltage
pulsed laser applications. Standard models, in many
configurations, are available for wavelength ranges
46
It has been assumed that the appropriate offset
or for definite wavelengths between 250 to 1100 nm
voltage has been applied for maximum extinction.
and operation up to 3000 nm is possible with special
The offset voltage causes a shift of the intensity curve
crystals.
over the voltage. The halfwave voltage is proportional
to the wavelength λ, to the crystal thickness d and in
The modulators are typically used with diode lasers,
reverse proportional to the crystal length l:
solid state lasers, ion lasers, gas lasers or white light
lasers.
These devices are being used in the fields of
Here n0 is the refractive index of the ordinary beam
reprography, stereo lithography, laser projection,
and r63 the electro-optical coefficient of the crystal.
optical storage, printing, research and development
and communication engineering in the laser industry.
In many cases it is advantageous to select an offset
voltage such that the first order intensity varies
The PM 25 and PM-CBB series are typically used
linearly with voltage. This is achieved by setting the
for fast intra-cavity phase modulation. Therefore
offset voltage to the value required for maximum
very fast control loops, with high feedback gain for
extinction minus
frequency and phase stabilization, can be constructed
½ · Uλ/2
for precision lasers.
The LM 0202 series modulators are hermetically
Selection Criteria
sealed. They can be operated at pressures from
The required wavelength and aperture are determined
100 mbar to 1500 mbar and at a temperature range
based on the existing laser system. Very high laser
between 0°C to 50°C.
power, in the multiwatt range, requires a large
aperture. Laser lines in the short wave spectral region
Standard models are designed for horizontal
can work problem free with modulators having low
operation. Modulators for vertical use are available by
electro-optical sensitivity: this gives rise to advantages
request. The modulator windows are easily cleaned
in bandwidth and size. A Brewster modulator of
with a mild organic solvent.
high optical quality should be used for loss sensitive
applications, especially intracavity modulation.
LINOS Laser Modulators
Digital Pulse Amplifier LIV 20-iso
• For all laser modulators with λ/2 voltage
up to 400 V
• High repetition rate
• Compact design
• Output Specifications:
- Signal voltage1)2): 70 - 420 V
- Rise-/falltime (10 - 90%)3):
< 15 ns, typ. 10 ns
- Repetition rate4): 2 to 20 MHz (depends
on signal voltage)
- Offset-voltage 1) 2): 0 - 400 V
• Input Specifications:
- Impedance5): pulse 50 / 600 Ω /
mod. 600 Ω
- Low state: 0 V to + 0.4 V
- High state: 2.4 V to + 5.5 V
- Trigger threshold: + 1.5 V
- Minimum pulse width : > 30 ns
- Input-output delay, typ.: 50 ns
- Input-output jitter: < 1 ns
- Line Voltage: 230 / 115 V
- Line Frequency: 50 / 60 Hz
• Housing Specifications:
- Dimensions (WxLxH) 260x330x155 mm
- Weight: app. 9.5 kg
- Power cord and connecting cable to
Modulator included
1)
Relative to ground
This voltage can be set manually or
externally with a control voltage 0 to
+ 10 V (input impendance 5 k)
3)
Optical risetime achieved with a
modulator LM 0202, connected with
special cable (l = 80 cm)
4)
Maximum signal voltage for 5 MHz
operation is 200 V. maximum repetition
rate for 400 V signal voltage is 2 MHz
5)
Modulation allows gating of signal
output
2)
LIV 20-iso
Product
Order-No
Digital Pulse Amplifier LIV 20-iso
84 50 2061 000
Sine-Amplifier for Phase Modulators
• Compact design
• Can be used with PM-C-BB, PM25, LM13
and LM0202
• Large modulation bandwidth
• High output voltage
• Cost effective
• Modulator cable and adapters included
• Power-supply included (on request with
snap-in multi-plug)
• Input waveform: SINE-Wave
• Input voltage: max. +13dBm
• Bandwidth with LM0202 : appr. 4-7 MHz
• Bandwidth with PM-C-BB: appr. 5-12 MHz
• Max. Output Voltage with LM0202 appr.
200 V @ 5-7 MHz frequency
• Max. Output Voltage with PM-C-BB appr.
500 V @ 8-12 MHz frequency
• Supply-Voltage (Power-Supply incl.): +12V DC
• Dimensions: 115x65x70 mm
Sine-Amplifier
Product
Order-No
Sine-Amplifier
for Phase Modulators
84 51 8000 0014
47
LINOS Laser Modulators
Phase Modulator PM 25
• Two crystals at Brewster angle in order
of compensation
• With Brewster windows
• Very high transmission
• Connectors: 4 mm banana plugs
• Different versions for wavelength ranges
between 250 and 1100 nm
•
•
•
•
•
•
Wavefront distortion < λ/10 at 633 nm
Bandwidth (3 dB) 100 MHz
Capacitance 30 pF
Max. continuous voltage 1500 V
Operating temperature 10 - 45°C
Weight approx. 500 g
• Please specify the wavelength or
wavelength range and laser parameters
when ordering.
48
Phase Modulator PM 25
Product
Wavelengths
(nm)
Power capability (W)
Transmission
(%)
Aperture
(mm)
λ/10-voltage at
633 nm (V)
Order-No
PM ADP
400-650
100 W (> 400 nm), 10 W (< 400 nm)
> 98
5x5
200 ±10%
84 50 2030 000
PM KD*P
250-1100
100 W (> 400 nm), 10 W (< 400 nm)
> 98
5x5
200 ±10%
84 50 2031 000
Subject to technical changes
LINOS Laser Modulators
Phase Modulator PM-C-BB
•
•
•
•
•
•
•
•
•
Brewster-cut MgO-LiNbO3 crystal
High photorefractive damage threshold
Broad wavelength range 450 ± 3000 nm
High transmission
Compact design
Small residual amplitude modulation
Connector: 1 x SMA
Wavefront distortion < λ/4 at 633 nm
Bandwidth DC-500 MHz (> 10 MHz
resonance-free)
49
Phase Modulator PM-C-BB
Product
Wavelength
(nm)
Power capability at
1064 nm1)
Transmission2)
Aperture
(Clear Apertur)
λ/10-Voltage at
1064 nm
Order-No
PM-C-BB
450-3000
> 100 W / mm2
> 98% (680 - 2000 nm)
1.9 mm (1.5 mm)
100 V ± 10%
84 51 2090 0006
PM-C-BB (T)3)
450-3000
> 100 W / mm2
> 98% (680 - 2000 nm)
1.9 mm (1.5 mm)
100 V ± 10%
Adapter plate for 1" mirror mount
1)
2)
3)
CW operation, depends on wavelength
excluded: LiNbO3 absorption at 2.82 - 2.84 μm
with built-in active temperature stabilization (< 10 mK)
84 51 2090 0007
84 51 2090 0008
Subject to technical changes
LINOS Laser Modulators
Laser Modulators LM 13
• Different versions: Universal modulator,
Intensity modulator (P) with thin film
polarizer, Phase modulator (PHAS)
• With 2 crystals in order of compensation
• Connectors: 4 mm banana plugs
• Different versions for wavelength ranges
between 250 and 1100 nm
•
•
•
•
•
•
•
Extinction1) > 250:1 (VIS, IR) or > 100:1 (UV)
Wavefront distortion < λ /4 at 633 nm
Bandwidth (3 dB) 100 MHz
Capacitance 46 pF
Max. continuous voltage 800 V
Operating temperature 10 - 45°C
Weight approx. 500 g
50
1)
Extinction: measured at continuous
wave between crossed polarizers.
Please specify the wavelength or
wavelength range and laser parameters
when ordering.
LM 13 (P) (PHAS)
LM 13 UV KD*P
2)
Product
Wavelengths
(nm)
Power capability
(W)
Transmission2)
(%)
Aperture
(mm)
λ/2-voltage at
355 nm (V)
Order-No
LM 13
250-310
0.1
> 91 / 88
Ø 1.5
240 ± 10%
84 50 2020 020
LM 13
250-310
0.1
> 91 / 88
Ø 3.5
390 ± 10%
84 50 2021 020
LM 13
300-390
1.0
> 95 / 92
Ø 1.5
240 ± 10%
84 50 2023 019
LM 13
300-390
1.0
> 95 / 92
Ø 3.5
390 ± 10%
84 50 2024 019
LM 13 P
250-310
0.1
> 91 / 88
Ø 1.5
240 ± 10%
84 50 2026 020
LM 13 P
250-310
0.1
> 91 / 88
Ø 3.5
390 ± 10%
84 50 2027 020
LM 13 P
300-390
1.0
> 95 / 92
Ø 1.5
240 ± 10%
84 50 2029 019
LM 13 P
300-390
1.0
> 95 / 92
Ø 3.5
390 ± 10%
84 50 2030 019
LM 13 PHAS
250-310
0.1
> 91 / 88
Ø 1.5
240 ± 10%
84 50 2032 020
LM 13 PHAS
250-310
0.1
> 91 / 88
Ø 3.5
390 ± 10%
84 50 2033 020
LM 13 PHAS
300-390
1.0
> 95 / 92
Ø 1.5
240 ± 10%
84 50 2035 019
LM 13 PHAS
300-390
1.0
> 95 / 92
Ø 3.5
390 ± 10%
Transmission: measured without / with polarizing beamsplitter cube.
84 50 2036 019
Subject to technical changes
LINOS Laser Modulators
StandardPlus
Modulators series LM 13 are also
available with the crystal LiTaO3 as universal or intensity modulator.
LM 13 VIS KD*P
2)
Product
Wavelengths
(nm)
Power capability
(W)
Transmission2)
(%)
Aperture
(mm)
λ/2-voltage at
633 nm (V)
Order-No
LM 13
400-850
0.1
> 98 / 95
3x3
420 ± 10%
84 50 2020 000
LM 13
400-850
0.1
> 98 / 95
5x5
700 ± 10%
84 50 2021 000
LM 13
400-850
5.0
> 95 / 92
3x3
420 ± 10%
84 50 2023 000
LM 13
400-850
5.0
> 95 / 92
5x5
700 ± 10%
84 50 2024 000
LM 13 P
400-850
0.1
> 98 / 95
3x3
420 ± 10%
84 50 2026 000
LM 13 P
400-850
0.1
> 98 / 95
5x5
700 ± 10%
84 50 2027 000
LM 13 P
400-850
5.0
> 95 / 92
3x3
420 ± 10%
84 50 2029 000
LM 13 P
400-850
5.0
> 95 / 92
5x5
700 ± 10%
84 50 2030 010
LM 13 PHAS
400-850
0.1
> 98 / 95
3x3
420 ± 10%
84 50 2032 000
LM 13 PHAS
400-850
0.1
> 98 / 95
5x5
700 ± 10%
84 50 2033 000
LM 13 PHAS
400-850
5.0
> 95 / 92
3x3
420 ± 10%
84 50 2035 000
LM 13 PHAS
400-850
5.0
> 95 / 92
5x5
700 ± 10%
Transmission: measured without / with polarizing beamsplitter cube.
84 50 2036 000
Subject to technical changes
LM 13 IR KD*P
Product
2)
Wavelengths
(nm)
Power capability
(W)
Transmission2)
(%)
Aperture
(mm)
λ/2-voltage at
1064 nm (V)
Order-No
LM 13
650-1000
5.0
> 95 / 92
3x3
710 ± 10%
84 50 2023 015
LM 13
950-1100
5.0
> 94 / 91
3x3
710 ± 10%
84 50 2023 016
LM 13 P
650-1000
5.0
> 95 / 92
3x3
710 ± 10%
84 50 2029 015
LM 13 P
950-1100
5.0
> 94 / 91
3x3
710 ± 10%
84 50 2029 016
LM 13 PHAS
650-1000
5.0
> 95 / 92
3x3
710 ± 10%
84 50 2035 015
LM 13 PHAS
650-1000
5.0
> 95 / 92
5x5
1180 ± 10%
84 50 2036 015
LM 13 PHAS
950-1100
5.0
> 94 / 91
3x3
710 ± 10%
84 50 2035 016
LM 13 PHAS
950-1100
5.0
> 94 / 91
5x5
1180 ± 10%
Transmission: measured without / with polarizing beamsplitter cube.
84 50 2036 016
Subject to technical changes
LM 13 IR KD*P High Power
2)
Product
Wavelengths
(nm)
Power capability
(W)
Transmission2)
(%)
Aperture
(mm)
λ/2-voltage at
1064 nm (V)
Order-No
LM 13
700-950
10
> 94 / 91
Ø1.0
710 ± 10%
84 50 2023 017
LM 13
950-1100
20
> 93 / 90
Ø1.0
710 ± 10%
84 50 2023 018
LM 13 P
700-950
10
> 94 / 91
Ø1.0
710 ± 10%
84 50 2029 017
LM 13 P
950-1100
20
> 93 / 90
Ø1.0
710 ± 10%
84 50 2029 018
LM 13 PHAS
700-950
10
> 94 / 91
Ø1.0
710 ± 10%
84 50 2035 017
LM 13 PHAS
700-950
10
> 94 / 91
Ø3.0
1180 ± 10%
84 50 2036 017
LM 13 PHAS
950-1100
20
> 93 / 90
Ø1.0
710 ± 10%
84 50 2035 018
LM 13 PHAS
950-1100
20
> 93 / 90
Ø3.0
1180 ± 10%
Transmission: measured without / with polarizing beamsplitter cube
84 50 2036 018
Subject to technical changes
51
LINOS Laser Modulators
Laser Modulators LM 0202
• Different versions: Universal modulator,
Intensity modulator (P) with thin film
polarizer, Phase modulator (PHAS)
• With 4 crystals in order of compensation
• Connectors: 4 mm banana plugs
• Different versions for wavelength ranges
between 250 and 1100 nm
LM 0202 (P) (PHAS)
•
•
•
•
•
•
•
Extinction1) > 250:1 (VIS, IR) or > 100:1 (UV)
Wavefront distortion < λ/4 at 633 nm
Bandwidth (3 dB) 100 MHz
Capacitance 82 pF
Max. continuous voltage 800 V
Operating temperature 10 - 45°C
Weight approx. 800 g
1)
Extinction: measured at continuous wave
between crossed polarizers.
Please specify the wavelength or
wavelength range and laser parameters
when ordering.
StandardPlus
Modulators series LM 0202 are
also available with the crystal
LiTaO3 - as universal or intensity
modulator.
52
LM 0202 UV KD*P
1)
Product
Wavelengths
(nm)
Power capability
(W)
Transmission1)
(%)
Aperture
(mm)
λ/2-voltage (355 nm)
(V)
Order-No
LM 0202
250-310
0.1
> 88 / 85
Ø 1.5
120 ± 10%
84 50 2040 003
LM 0202
250-310
0.1
> 88 / 85
Ø 3.5
200 ± 10%
84 50 2041 003
LM 0202
300-390
1
> 93 / 90
Ø 1.5
120 ± 10%
84 50 2049 007
LM 0202
300-390
1
> 93 / 90
Ø 3.5
200 ± 10%
84 50 2050 011
LM 0202 P
250-310
0.1
> 88 / 85
Ø 1.5
120 ± 10%
84 50 2043 003
LM 0202 P
250-310
0.1
> 88 / 85
Ø 3.5
200 ± 10%
84 50 2044 004
LM 0202 P
300-390
1
> 93 / 90
Ø 1.5
120 ± 10%
84 50 2052 013
LM 0202 P
300-390
1
> 93 / 90
Ø 3.5
200 ± 10%
84 50 2053 006
LM 0202 PHAS
250-310
0.1
> 88 / 85
Ø 1.5
120 ± 10%
84 50 2046 004
LM 0202 PHAS
250-310
0.1
> 88 / 85
Ø 3.5
200 ± 10%
84 50 2047 004
LM 0202 PHAS
300-390
1
> 93 / 90
Ø 1.5
120 ± 10%
84 50 2055 010
LM 0202 PHAS
300-390
1
> 93 / 90
Ø 3.5
200 ± 10%
84 50 2056 006
Subject to technical changes
Transmission: measured without / with polarizing beamsplitter cube
LM 0202 VIS ADP
1)
Product
Wavelengths
(nm)
Power capability
(W)
Transmission1)
(%)
Aperture
(mm)
λ/2-voltage (633 nm)
(V)
Order-No
LM 0202
400-650
0.1
> 97 / 94
3x3
210 ± 10%
84 50 2001 000
LM 0202
400-650
0.1
> 97 / 94
5x5
350 ± 10%
84 50 2002 000
LM 0202
400-650
5.0
> 92 / 89
3x3
210 ± 10%
84 50 2010 000
LM 0202
400-650
5.0
> 92 / 89
5x5
350 ± 10%
84 50 2011 000
LM 0202 P
400-650
0.1
> 97 / 94
3x3
210 ± 10%
84 50 2004 000
LM 0202 P
400-650
0.1
> 97 / 94
5x5
350 ± 10%
84 50 2005 000
LM 0202 P
400-650
5.0
> 92 / 89
3x3
210 ± 10%
84 50 2013 000
LM 0202 P
400-650
5.0
> 92 / 89
5x5
350 ± 10%
84 50 2014 000
LM 0202 PHAS
400-650
0.1
> 97 / 94
3x3
210 ± 10%
84 50 2007 000
LM 0202 PHAS
400-650
0.1
> 97 / 94
5x5
350 ± 10%
84 50 2008 000
LM 0202 PHAS
400-650
5.0
> 92 / 89
3x3
210 ± 10%
84 50 2016 000
LM 0202 PHAS
400-650
5.0
> 92 / 89
5x5
350 ± 10%
Transmission: measured without / with polarizing beamsplitter cube
84 50 2017 000
Subject to technical changes
LINOS Laser Modulators
LM 0202 VIS KD*P
Product
1)
Wavelengths
(nm)
Power capability
(W)
Transmission1)
(%)
Aperture
(mm)
λ/2-voltage (633 nm)
(V)
Order-No
LM 0202
400-850
0.1
> 97 / 94
3x3
210 ± 10%
84 50 2040 000
LM 0202
400-850
0.1
> 97 / 94
5x5
350 ± 10%
84 50 2041 000
LM 0202
400-850
5.0
> 92 / 89
3x3
210 ± 10%
84 50 2049 000
LM 0202
400-850
5.0
> 92 / 89
5x5
350 ± 10%
84 50 2050 005
LM 0202 P
400-850
0.1
> 97 / 94
3x3
210 ± 10%
84 50 2043 000
LM 0202 P
400-850
0.1
> 97 / 94
5x5
350 ± 10%
84 50 2044 000
LM 0202 P
400-850
5.0
> 92 / 89
3x3
210 ± 10%
84 50 2052 000
LM 0202 P
400-850
5.0
> 92 / 89
5x5
350 ± 10%
84 50 2053 000
LM 0202 PHAS
400-850
0.1
> 97 / 94
3x3
210 ± 10%
84 50 2046 000
LM 0202 PHAS
400-850
0.1
> 97 / 94
5x5
350 ± 10%
84 50 2047 000
LM 0202 PHAS
400-850
5.0
> 92 / 89
3x3
210 ± 10%
84 50 2055 000
LM 0202 PHAS
400-850
5.0
> 92 / 89
5x5
350 ± 10%
84 50 2056 000
Transmission: measured without / with polarizing beamsplitter cube
Subject to technical changes
53
LM 0202 IR KD*P
1)
Product
Wavelengths
(nm)
Power capability
(W)
Transmission1)
(%)
Aperture
(mm)
λ/2-voltage (1064 nm)
(V)
Order-No
LM 0202
650-1000
5.0
> 92 / 89
3x3
360 ± 10%
84 50 2049 001
LM 0202
650-1000
5.0
> 92 / 89
5x5
590 ± 10%
84 50 2050 006
LM 0202
950-1100
5.0
> 90 / 87
3x3
360 ± 10%
84 50 2049 004
LM 0202
950-1100
5.0
> 90 / 87
5x5
590 ± 10%
84 50 2050 007
LM 0202 P
650-1000
5.0
> 92 / 89
3x3
360 ± 10%
84 50 2052 001
LM 0202 P
650-1000
5.0
> 92 / 89
5x5
590 ± 10%
84 50 2053 001
LM 0202 P
950-1100
5.0
> 90 / 87
3x3
360 ± 10%
84 50 2052 004
LM 0202 P
950-1100
5.0
> 90 / 87
5x5
590 ± 10%
84 50 2053 002
LM 0202 PHAS
650-1000
5.0
> 92 / 89
3x3
360 ± 10%
84 50 2055 006
LM 0202 PHAS
650-1000
5.0
> 92 / 89
5x5
590 ± 10%
84 50 2056 001
LM 0202 PHAS
950-1100
5.0
> 90 / 87
3x3
360 ± 10%
84 50 2055 001
LM 0202 PHAS
950-1100
5.0
> 90 / 87
5x5
590 ± 10%
Transmission: measured without / with polarizing beamsplitter cube
84 50 2056 002
Subject to technical changes
LM 0202 IR KD*P High Power
1)
Product
Wavelengths
(nm)
Power capability
(W)
Transmission1)
(%)
Aperture
(mm)
λ/2-voltage (1064 nm)
(V)
Order-No
LM 0202
700-950
10
> 91 / 88
Ø 1.0
360 ± 10%
84 50 2049 006
LM 0202
700-950
10
> 91 / 88
Ø 3.0
590 ± 10%
84 50 2050 010
LM 0202
950-1100
20
> 89 / 86
Ø 1.0
360 ± 10%
84 50 2049 005
LM 0202
950-1100
20
> 89 / 86
Ø 3.0
590 ± 10%
84 50 2050 008
LM 0202 P
700-950
10
> 91 / 88
Ø 1.0
360 ± 10%
84 50 2052 012
LM 0202 P
700-950
10
> 91 / 88
Ø 3.0
590 ± 10%
84 50 2053 005
LM 0202 P
950-1100
20
> 89 / 86
Ø 1.0
360 ± 10%
84 50 2052 011
LM 0202 P
950-1100
20
> 89 / 86
Ø 3.0
590 ± 10%
84 50 2053 003
LM 0202 PHAS
700-950
10
> 91 / 88
Ø 1.0
360 ± 10%
84 50 2055 009
LM 0202 PHAS
700-950
10
> 91 / 88
Ø 3.0
590 ± 10%
84 50 2056 005
LM 0202 PHAS
950-1100
20
> 89 / 86
Ø 1.0
360 ± 10%
84 50 2055 008
LM 0202 PHAS
950-1100
20
> 89 / 86
Ø 3.0
590 ± 10%
84 50 2056 004
Transmission: measured without / with polarizing beamsplitter cube
Subject to technical changes
Laser Modulators
Laser Modulators - Questionnaire
QIOPTIQ Photonics GmbH & Co. KG
Crystal Technology
Hans-Riedl-Straße 9
85622 Feldkirchen
Germany
Phone
Fax
E-mail
Internet
54
+49(0)89 255 458-100
+49(0)89 255 458-895
laser@qioptiq.de
www.qioptiq.com
• Full Name: _____________________________________________
• Company Name: ________________________________________
• Address: _______________________________________________
• Zip Code: ______________________________________________
• Country: _______________________________________________
• Phone: ________________________________________________
• Fax: ___________________________________________________
• City: __________________________________________________
1. Laser Pulse Parameter at Location of Modulator
1.1 Wavelength [nm] ____________________________________________________________________________________________________
1.2 Continuous-Wave Laser Power [W] _____________________________________________________________________________________
1.3 Beam Diameter, 1/e2 [mm] ____________________________________________________________________________________________
1.4 Laser Pulse Energy ___________________________________________________________________________________________________
1.5 Laser Pulse Duration [ns] ______________________________________________________________________________________________
1.6 Repetition Rate [MHz] ________________________________________________________________________________________________
2. Type of Modulator
2.1 Hard Aperture [mm] _________________________________________________________________________________________________
2.2 Transmission [%] ____________________________________________________________________________________________________
2.3 Maximum Extinction [1:x] _____________________________________________________________________________________________
2.4 Crystal [KD*P, ADP] __________________________________________________________________________________________________
2.5 Number of crystals (2 or 4) _____________________________________________________________________________________________
2.6 Universal-, Intensity-, Phase-Modulator __________________________________________________________________________________
3. If a driver (Amplifier) is required...
3.1 Digital- or Analog-Amplifier ___________________________________________________________________________________________
3.2 Switching Voltage [V] _________________________________________________________________________________________________
3.3 Rise-/Fall-Time [ns] ___________________________________________________________________________________________________
3.4 Duration [ns] _______________________________________________________________________________________________________
3.1 Repetition Rate [MHz] ________________________________________________________________________________________________
4. Estimate Number of Units
4.1 Year [No. of Units] Target Price/Unit ____________________________________________________________________________________
5. Comments / Remarks:
______________________________________________________________________________________________________________________
______________________________________________________________________________________________________________________
______________________________________________________________________________________________________________________
… coming soon …
Laser Power Stabilization Series
• Operation modes:
- Modulation: (no stabilization) up to 2 kHz
- Setpoint: Stabilization to preset transmission value
- Autolock: Stabilization to maximum possible
transmission value
• Optical output stability < 0.1% (1h)
• Large stabilization bandwidth DC – 300 kHz
• Optional wireless photodiode for external stabilization
• USB interface
Compact two stage Faraday Isolator Series
High isolation (> 60dB) and high transmission
at further reduced size for space critical applications
FI-780-5 TVC
Outer dimensions: FI-780-TV: 40 x 40 x 106 mm
New TVC verion: 40 x 40 x 78 mm
FI-920-5 TIC
Outer dimensions FI-920-TI: 58 x 58 x 131 mm
New TIC version: 45 x 45 x 90 mm
Other wavelengths available upon request
55
Discover the Q!
56
Qioptiq supplies cutting edge technology for all
optical requirements of Industrial Manufacturing.
Worldwide production capacities and state-of-theart manufacturing plants guarantee an impressive
portfolio of photonic products and solutions.
Join us on a journey of discovery in our Crystal
Technology brochure!
Photonics for Innovation
For technical information contact:
Qioptiq
www.qioptiq.com
photonics@qioptiq.com
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