Crystal Technology 1 2 02 Company Profile Qioptiq designs and manufactures photonic products precision manufacturing and responsive global and solutions, serving a wide range of markets and sourcing. Due to a series of acquisitions, Qioptiq applications in the medical and life sciences, industrial has an impressive history and pedigree, benefiting manufacturing, defense and aerospace, and research from the knowledge and experience of LINOS, and development sectors. Point Source, Rodenstock Precision Optics, Spindler & Hoyer, Gsänger, Optem, Pilkington, Avimo and The company is known for its high-quality standard others. With a total workforce exceeding 2,300, components, products and instruments, custom Qioptiq has a worldwide presence with locations modules and assemblies, leading-edge innovation, throughout Europe, Asia and the USA. 1877 Rodenstock founded 1898 Spindler & Hoyer founded 1966 1969 1984 1991 Pilkington PE Ltd. founded, which later becomes THALES Optics Gsänger Optoelektronik founded Optem International founded Point Source founded Medical & Life Sciences Index Industrial Manufacturing Defense & Aerospace Company Profile 02 – 03 Core Competencies 04 – 05 LINOS Faraday Isolators – Introduction 06 – 09 Single Stage Faraday Isolators 10 – 17 Isolators with a Broad Tuning Rage 18 – 20 Two Stage Faraday Isolators 21 – 24 Questionnaire Faraday Isolators 25 LINOS Pockels Cells and Laser Modulators – Introduction 26 LINOS Pockels Cells – Technical Information 27 – 31 Research & Development LINOS Pockels Cells 32 – 43 Questionnaire Pockels Cells 44 LINOS Laser Modulators – Technical Information 45 – 46 Amplifiers 47 – 48 LINOS Laser Modulators 48 – 53 Questionnaire Laser Modulators 1996 LINOS founded through the merger of Spindler & Hoyer, Steeg & Reuter Präzisionsoptik, Franke Optik and Gsänger Optoelektronik 2000 Rodenstock Präzisionsoptik acquired by LINOS 2001 2005 AVIMO Group acquired by THALES Qioptiq founded as THALES sells High Tech Optics Group 54 2006 / 2007 2010 Qioptiq acquires LINOS and Point Source as “members of the Qioptiq group” The new Qioptiq consolidates all group members under one brand 03 4 04 Core Competencies Qioptiq offers the most comprehensive set of technologies and knowledge to fulfill the demands of almost any modern application in the field of photonics. Our decades of interdisciplinary experience in many markets enable us to provide a portfolio of design, technologies and manufacturing capabilities suitable for your specific application. We can supply a solution that will boost your competitive edge and support your efforts to optimize your products. Our components, modules and systems have superior specifications – such as optimum optical resolution, highest transmission, superior beam quality and much more. Design and development • Optical system design including non-linear optics • Mechanical design • Characterization of crystals • FEM-analysis including magnetic and thermal effects • Standard and Sol-Gel coating technologies • Numerous product patents • Lasers for biotechnology and metrology 05 5 Materials Assembly technologies • Non-linear crystals: KD*P, BBO, RTP, • Development of in-house processes ADP, LiNbO3, TGG and others • Various optical materials for UV to IR applications • Metals, magnets and various polymer materials for assembly of electro- and magneto-optical systems • Glueing technologies • Flow-box assembly LINOS Faraday Isolators The LINOS Faraday Isolators We have LINOS Faraday isolators for all wavelengths in the range from 390 nm to 1310 nm, as well as ! for 1550 nm. Isolators for other wavelengths can Special features: be implemented upon request. Many isolators can We also have LINOS Microbench-compatible versions be adjusted over a wide spectral range; variable of our isolators for the most commonly used frequency models can even be set for an interval wavelengths. of several hundred nanometers. At the same time, We are always happy to implement custom designs LINOS Faraday isolators are distinguished by high and systems, even for one-time orders. performance combined with the greatest possible 06 transmission. With more than 60 dB, our two-stage Ideal areas of application: isolators offer the best isolation available on the Protecting market. decoupling oscillators and amplification systems; The consistently high Qioptiq quality is assured by injection locking, panels, and more. lasers from damage or instability; a combination of our many years of experience, an intelligent design, modern engineering with computer simulations, sophisticated processing and our ISO 9001 / ISO 13485 certified quality management system. The result is the incomparable value that distinguishes all our products – value you can count on! Qioptiq quality criteria: Isolation > 30 dB (one-stage) or > 60 dB (two-stage) Transmission > 90% (one-stage) or > 80% (two-stage) All models can be used in wide wavelength ranges More information: Contact us to receive the complete Qioptiq standard offer in our LINOS catalog by mail, or look for it under: www.qioptiq-shop.com LINOS Faraday Isolators Overview Single SingleStage Stage Aperture FI-600/1100-8SI FI-420/460-5SV FI-390/420-5SV FI-1060-8SI FI-600/1100-5SI FI-500/820-5SV FI-500/780-5SV 5 mm FI-x-5SV FI-405-5SV FI-488-5SV FI-x-5SI 07 Broadband FI-x-5SV BB Microbench FI-x-5SV MB Low Power 3.5 mm Compact FI-488-5SC Compact FI-488-3SC 2 mm Wavelength 400 Aperture FI-x-5LP FI-x-5SC FI-x-3SC FI-x-2SI FI-x-2SV 500 600 700 800 900 1000 Two Stage 5 mm Wavelength Aperture 4 mm Wavelength LPE-Technology 1100 1200 al yst G LINOS Faraday Isolators TG Cr N m mu Tra xi Ma S Characteristics tor ota r N ize lar Po R ay ad Far um n tio inc Ext xim Principle of Operation Ma Faraday isolators are optical components which allow light travel in only one direction. Their mode of operation is based on the non-linear Faraday effect direction of the magnetic field (±45°) and the (magneto rotation). In principle, the function of an exit polarizer is also oriented at ±45°, so that the optical isolator is analogue to that of an electrical maximum beam intensity is transmitted. diode. If light of any polarization, but with a reversed direction 08 ion iss nsm Faraday isolators are composed of three elements: of propagation, meets the exit polarizer, it leaves • Entrance Polarizer at ±45°, passes through the Faraday rotator and is • Faraday Rotator again rotated by ±45°. The non-reciprocal nature of • Exit Polarizer the Faraday effect results in the direction of rotation once again being counter clockwise as viewed in the Thin film polarizers are commonly used as entrance north/south direction of the magnetic field. Upon and exit polarizers, typically in form of a special leaving the Faraday rotator, the polarization has polarizing beam splitter cube. These polarizers have gone through two ±45° rotations resulting in a total an extremely high extinction ratio and are designed rotation of ±90°. In this polarization direction the for use with high power lasers. The polarizer entrance light is deflected laterally by the entrance polarizer. and exit surfaces are coated with an antireflective coating for the specified wavelength range. The key Increased Isolation element of the Faraday isolator is the Faraday rotator. The maximum isolation of the Faraday isolator is The rotator consists of a strong permanent magnet limited by inhomogenities of the TGG crystal and containing a crystal with a high Verdet constant. the magnetic field. However, it is possible to square the extinction ratio by placing two isolators in series Light of any polarization entering the entrance and by arranging the polarity of the two magnets to polarizer exits as horizontally or vertically linearly be opposite to each other. This way the polarization polarized light. Since laser light is usually linearly direction of the transmitted light remains unchanged polarized, one can match the orientation of the in the transmission direction and the effect of both entrance polarizer and the laser by simply rotating magnetic fields is enhanced. This arrangement also the isolator. Light then passes through the Faraday leads to a more compact isolator. The strength of rotator. For most wavelengths the crystal is a Terbium this effect depends on the distance between the Gallium Garnet (TGG) crystal which is placed in a two magnets and can be used to tune the isolator to strong homogeneous magnetic field. Crystal length different wavelengths. The adjustment is necessary and magnetic field strength are adjusted so that because the rotational angle of the TGG crystal is the light polarization is rotated by 45° on exiting wavelength and temperature dependent. Please see the crystal. In the figure above the light is rotated chapter “Two stage isolators” (page 21) for more counter clockwise when viewed in the north/south information. LINOS Faraday Isolators Advantages High Isolation Three sides of the entrance and exit polarizers are The properties of the LINOS Faraday isolator are usable and readily accessible for easy cleaning. The determined by the quality of the optical elements and degree of isolation can be adjusted in a wide range. the uniformity of the magnetic field. The entrance and exit polarizers exhibit a very high extinction ratio, so Mounting Flexibility that the isolation is mainly limited by inhomogenities The LINOS Faraday isolators can be mounted directly in the crystal material. Specially selected crystal via threaded holes in the housing or via additional materials with a high Verdet constant combined with base plates or angle brackets. permanent magnets with a high remanence enable us to use shorter crystals and obtain an isolation Applications > 30 dB. The ongoing development and refinement of laser technology have created a need for optical The radiation blocked by the entrance and exit components that shield the laser resonator from polarizers is not absorbed internally, but is deflected back reflections. LINOS Faraday isolators provide by 90° with respect to the beam direction. This an efficient method of suppressing instabilities and ensures a stable thermal operation even at higher intensity fluctuations in laser devices. laser power levels. The blocked radiation can be used for other applications. All optical surfaces are slightly Typical applications are: tilted relative to the beam axis. • Protection of the resonator in solid state and gas lasers from back reflections Low Insertion Loss The high transmission, typically > 90%, is achieved by using absorption free materials and antireflective coatings with low residual reflectivity on all entrance • Prevention of parasitic oscillation in multistage solid state amplifiers • Protection of diode lasers against back scatter and extraneous light and exit surfaces. Large Aperture, Compact Design compact design All optical elements have been aligned to eliminate low insertion loss beam shading and allow for easy adjustment. Focusing is not necessary. The compact design is achieved by using rare earth magnets with the highest remanent magnetism and large aperture TGG crystal material with a high Verdet constant. The isolator is suitable for divergent beams or in setups with limited space. A minimal optical path length in the isolator results in the lowest possible influence on the image. high isolation 09 LINOS Faraday Isolators Single Stage Faraday Isolators Technical Overview Broadband option The compact LINOS Faraday isolators in this chapter On Broadband (BB) models the isolation is improved use a single stage rotator. The length is kept to a over a broadband spectrum by compensating minimum with the use of powerful permanent rotational dispersion of the TGG. This renders the magnets in an optimized geometry. A 360° rotation device usable over a wavelength range of ±50 nm of the exit polarizer provides a maximum extinction without additional adjustment. The isolators can be over a certain range around the central wavelength. mounted on rods, cylindrical mounts or by using the The entrance and exit polarizers are polarizing beam assembly surfaces so that the laser polarization can splitter cubes. The blocked radiation is diverted by be oriented horizontally or vertically. 90° and is readily available for other applications. At 30 dB, the specification of the isolator is sufficient Applications for most standard applications. For specialized The following single stage LINOS Faraday isolators applications, selected isolators with an extinction up are suitable for all lasers operating in the range to 45 dB are available. especially: An even higher extinction is provided by the two stage isolator series. • Ar+ and Kr+ lasers • other Ion lasers Wavelength tuning • HeNe lasers The Verdet constant of the TGG crystal is dependent • other gas lasers upon wavelength and temperature. In order to • Dye lasers compensate for different temperatures or different • Diode lasers wavelengths, it is possible to tune the isolator in • Ti:Sapphire lasers order to achieve maximum extinction. Tuning the • Cr:LiCAF lasers isolator is accomplished by rotating the holder of the • Short pulse lasers exit polarizer with respect to an engraved angular • Mode-synchronized lasers scale. • Alexandrite lasers The graph shows the typical reduction factor of the transmission (Δλ) that is due to the tuning of the isolator to a wavelength λ that is different from the design wavelength λ0. The bar has a length that covers the wavelength range for which 0.95 < T(Δλ) < 1. The bullet indicates the design wavelength λ0. The overall transmission of a Faraday isolator is equal to Tt = T0 x T(Δλ), where T0 is a factor that represents the transmission of the polarizers. At the design wavelength the overall transmission of the Faraday isolator is T0 > 90% Reduction of transmission T(Δλ) [%] 10 Tuning of design wavelength Δλ LINOS Faraday Isolators Isolators with 2mm Aperture, SV / SI-Series FI-x-2SV / FI-x-2SI • Isolation better than 30 dB / typically 38 - 42 dB over the entire wavelength range, custom isolation values on request • TGG crystal • Rare earth magnet • Output polarizer, 360° rotation, engraved tuning scale • Access to blocked beam FI-x-2SV (x = 530, 630, 680 nm) • Mounting 2SV-version: via two M3 threaded holes at the bottom side, 20 mm separation 11 • Damage threshold > 200 mJ / cm2 for pulses of 10 ns (1064 nm) • Damage threshold > 28 mJ / cm2 for pulses of 280 fs (850 nm, 20 Hz) FI-x-2SI (x = 760, 820, 990, 1060 nm) FI-x-2SV / FI-x-2SI Product Isolation, guaranteed / typical (dB) Transmission at design wavelength (%) Transmission at boundry wavelength (%) Tuning range typical (nm) Aperture Dimensions Isolator (mm) (mm) Order-No FI-530-2SV > 30/38-42 > 90 > 85 505 - 565 Ø2 25x25x37 84 50 1010 007 FI-630-2SV > 30/38-42 > 90 > 85 595 - 670 Ø2 25x25x37 84 50 1011 000 FI-680-2SV > 30/38-42 > 90 > 85 645 - 725 Ø2 25x25x37 84 50 1010 009 FI-760-2SI > 30/38-42 > 90 > 85 720 - 810 Ø2 Ø 40x91 84 50 1034 007 FI-820-2SI > 30/38-42 > 90 > 85 775 - 875 Ø2 Ø 40x91 84 50 1034 008 FI-990-2SI > 30/38-42 > 90 > 85 940 - 1050 Ø2 Ø 40x91 84 50 1034 009 FI-1060-2SI > 30/38-42 > 90 > 85 1010 - 1120 Ø2 Ø 40x91 84 50 1034 010 Subject to technical changes LINOS Faraday Isolators Isolators with 3.5 and 5mm Aperture, SC-Series FI-x-3SC / FI-x-5SC • Extreme compact design • Isolation better than 30 dB, typically 38-42 dB over the entire wavelength range, custom isolation values on request • TGG crystal • Rare earth magnet • Output polarizer, 360° rotation, engraved tuning scale • Access to blocked beam FI-x-3SC (x = 488, 980, 1064, 1120 nm) • Optional version with Brewster plate polarizers (BP) on request for FI-1060-xSC, isolation better than 30 dB • Mounting: via four M2 threaded holes at the bottom side and at backside; 15 x 22.5 mm separation (3SC-version, except FI-1210-3SC); 49.5 x 22.5 mm separation (FI-1210-3SC); 13 x 22.5 mm separation (5SC-version) 12 FI-x-5SC (x = 488, 930, 1064, 1120 nm) • Damage threshold > 200 mJ / cm2 for pulses of 10 ns (1064 nm) • Damage threshold > 28 mJ / cm2 for pulses of 280 fs (850 nm, 20 Hz) FI-1210-3SC, -5SC FI-x-3SC / FI-x-5SC * Product Isolation, guaranteed/ typical (dB) Transmission at design wavelength (%) Transmission at boundry wavelength (%) Tuning range typical (nm) Aperture Dimensions Order-No (mm) (mm) FI-488-3SC* > 35/38-42 > 90 - 478 - 498 Ø 3.5 40x40x60 FI-488-5SC* > 35/38-42 > 90 - 478 - 498 Ø5 45x45x58 84 51 1090 0013 FI-980-3SC > 30/38-42 > 90 > 85 925 - 1040 Ø 3.5 40x40x60 84 50 1036 004 84 51 1090 0016 FI-930-5SC > 30/38-42 > 90 > 85 880 - 990 Ø5 45x45x58 84 50 1037 007 FI-1060-3SC > 30/38-42 > 90 > 85 1010 - 1120 Ø 3.5 40x40x60 84 50 1036 001 84 50 1037 001 FI-1060-5SC > 30/38-42 > 90 > 85 1010 - 1120 Ø5 45x45x58 FI-1120-3SC > 30/38-42 > 90 > 85 1080 - 1170 Ø 3.5 40x40x60 84 51 1010 0057 FI-1120-5SC > 30/38-42 > 90 > 85 1080 - 1170 Ø5 45x45x58 84 51 1010 0009 FI-1210-3SC > 30/38-42 > 90 > 85 1160 - 1260 Ø 3.5 45x45x96 84 51 1010 0043 FI-1210-5SC > 30/38-42 > 90 > 85 1160 - 1260 Ø5 45x45x96 84 51 1010 0053 optical contacted polarizers Subject to technical changes LINOS Faraday Isolators Isolators with 5mm Aperture, LP-Series FI-x-5LP • Faraday Isolator, low power • Isolation better than 38 dB • TGG crystal • Rare earth magnet • In- and output polarizer rotatable • Mounting: via two M4 threaded holes at the bottom side, 30 mm separation • Damage threshold > 25 W / cm2 FI-x-5LP (x = 630, 680, 780, 850 nm) 13 FI-x-5LP Isolation, guaranteed (dB) Transmission at design wavelength (%) Tuning range typical (nm) Aperture FI-630-5LP > 38 > 70 595 - 670 Ø5 41x40x40 84 51 1010 0098 FI-680-5LP > 35 > 75 645 - 725 Ø5 41x40x40 84 51 1010 0100 (mm) Dimension Isolator (mm) Order-No Product FI-780-5LP > 38 > 85 750 - 810 Ø5 41x40x40 84 51 1010 0091 FI-850-5LP > 38 > 85 810 - 905 Ø5 41x40x40 84 51 1010 0099 Subject to technical changes LINOS Faraday Isolators Isolators with 5mm Aperture, SV / SI-Series FI-x-5SV / FI-x-5SI • Isolation better than 30 dB, typically 38-42 dB over the entire wavelength range, custom isolation values on request • TGG crystal • Rare earth magnet • Output polarizer, 360° rotation, engraved tuning scale • Access to blocked beam FI-x-5SV (x = 530, 630, 730, 780, 810, 850 nm) 14 • Optional version with Brewster plate polarizers (BP) on request for FI-1060-5SI, isolation better than 30 dB • For upgrading to broadband-version refer to chapter Special Isolators • Mounting: via two M4 threaded holes at the bottom side and at the back side; 30 mm separation (5SV-version); 40 mm separation (5SI-version); or via base plate • Base plate included FI-x-5SI (x = 488, 910, 960, 1000, 1060 nm) • Damage threshold > 200 mJ / cm2 for pulses of 10 ns (1064 nm) • Damage threshold > 28 mJ / cm2 for pulses of 280 fs (850 nm, 20 Hz) FI-x-5SV / FI-x-5SI Item Title * Isolation guaranteed / typical (dB) Transmission at design wavelength (%) Transmission at boundry wavelength (%) Tuning range typical (nm) Aperture Dimensions Isolator (mm) (mm) Dimensions base plate (LxWxH) (mm) Order-No FI-405-5SV* > 35 > 88 - 400 - 420 Ø5 40x56x90 - 84 51 1010 0131 FI-488-5SI* > 30/38-42 > 90 > 85 478 - 498 Ø5 58x58x95 70x58x8 84 50 1030 000 FI-530-5SV > 30/38-42 > 90 > 85 505 - 565 Ø5 40x40x55 50x30x9.5 84 50 1013 002 FI-630-5SV > 30/38-42 > 90 > 85 595 - 670 Ø5 40x40x55 50x30x9.5 84 50 1013 004 FI-730-5SV > 30/38-42 > 90 > 85 690 - 780 Ø5 40x40x55 50x30x9.5 84 50 1013 034 FI-780-5SV > 30/38-42 > 90 > 85 740 - 830 Ø5 40x40x55 50x30x9.5 84 50 1013 008 FI-810-5SV > 30/38-42 > 90 > 85 765 - 865 Ø5 40x40x55 50x30x9.5 84 50 1013 033 FI-850-5SV > 30/38-42 > 90 > 85 805 - 905 Ø5 40x40x55 50x30x9.5 84 50 1013 027 FI-910-5SI > 30/38-42 > 90 > 85 860 - 970 Ø5 58x58x95 70x58x8 84 50 1031 002 FI-960-5SI > 30/38-42 > 90 > 85 910 - 1020 Ø5 58x58x95 70x58x8 84 50 1031 006 FI-1000-5SI > 30/38-42 > 90 > 85 950 - 1060 Ø5 58x58x95 70x58x8 84 50 1031 014 FI-1060-5SI > 30/38-42 > 90 > 85 1010 - 1120 Ø5 58x58x95 70x58x8 84 50 1031 000 optical contacted polarizers Subject to technical changes LINOS Faraday Isolators Isolators with 8mm Aperture, SI-Series FI-1060-8SI • Isolation better than 30 dB, typically 38-42 dB over the entire wavelength range, custom isolation values on request • TGG crystal • Rare earth magnet • Output polarizer, 360° rotation, engraved tuning scale • Access to blocked beam FI-1060-8SI • Optional version with Brewster plate polarizers (BP) on request, isolation better than 30 dB • Mounting: via two M4 threaded holes at the bottom side and at the back side; 55 mm separation, or via base plate • Base plate included 15 • Damage threshold > 200 mJ / cm2 for pulses of 10 ns (1064 nm) • Damage threshold > 28 mJ / cm2 for pulses of 280 fs (850 nm, 20 Hz) FI-1060-8SI Order-No (mm) Dimensions base plate (LxWxH) (mm) 76x76x95 85x76x8 84 50 1032 000 Item Title Isolation, guaranteed / typical (dB) Transmission at design wavelength (%) Transmission at boundary wavelength (%) Tuning range typical (nm) Aperture Dimensions Isolator (mm) FI-1060-8SI > 30/38-42 > 90 > 80 1010-1120 Ø8 Subject to technical changes LINOS Faraday Isolators Special Isolators with 5mm Aperture, SV-Series FI-x-5SV-MB / FI-x-5SV-BB FI-x-5SV-MB (x = 530, 630, 730, 780, 810, 850 nm) • Isolation better than 30 dB, typically 38-42 dB over the entire wavelength range, custom isolation values on request • TGG crystal • Rare earth magnet • Output polarizer, 360° rotation, engraved tuning scale • Access to blocked beam • MB-version: compatible to the Microbench system • BB-version: for multiline lasers or spectrally broadband lasers such as fs-laser systems • Mounting BB-version: via two M4 threaded holes at the bottom side and at the back side; 30 mm separation, or via base plate • Base plate included 16 FI-x-5SV-BB (x = 780, 820 nm) • Damage threshold > 200 mJ / cm2 for pulses of 10 ns (1064 nm) • Damage threshold > 28 mJ / cm2 for pulses of 280 fs (850 nm, 20 Hz) FI-x-5SV-MB / FI-x-5SV-BB Order-No (mm) Dimensions base plate (LxWxH) (mm) 42x36x65 - 84 50 1014 002 42x36x65 - 84 50 1014 004 Ø5 42x36x65 - 84 50 1014 034 740 - 830 Ø5 42x36x65 - 84 50 1014 008 > 85 765 - 865 Ø5 42x36x65 - 84 50 1014 033 > 90 > 85 805 - 905 Ø5 42x36x65 - 84 50 1014 001 > 30/38-42 > 90 > 85 725 - 825 Ø5 40x40x61 50x30x9.5 84 50 1024 008 > 30/38-42 > 90 > 85 760 - 860 Ø5 40x40x61 50x30x9.5 Product Isolation guaranteed/ typical (dB) Transmission at design wavelength (%) Transmission at boundary wavelength (%) Tuning range typical (nm) Aperture Dimensions Isolator (mm) FI-530-5SV-MB > 30/38-42 > 90 > 85 505 - 565 Ø5 FI-630-5SV-MB > 30/38-42 > 90 > 85 595 - 670 Ø5 FI-730-5SV-MB > 30/38-42 > 90 > 85 690 - 780 FI-780-5SV-MB > 30/38-42 > 90 > 85 FI-810-5SV-MB > 30/38-42 > 90 FI-850-5SV-MB > 30/38-42 FI-780-5SV-BB FI-820-5SV-BB 84 50 1024 009 Subject to technical changes LINOS Faraday Isolators 4mm Aperture Isolators with Magnetooptical Crystal Film FI-x-4SL • Extremely small size • Isolation better than 35 dB • Faraday material: magneto-optical crystal film in saturation • Rare earth magnet • Output polarizer, 360° rotation • Access to blocked beam FI-x-4SL (x = 1310, 1550 nm) • Max. cw power: 2 W • Damage threshold > 100 MW / cm2 for pulses of 20 ns (1550 nm) 17 FI-x-4SL Aperture Dimensions Isolator Order-No Item Title Isolation, guaranteed/ typical (dB) Transmission at design wavelength (%) Transmision at boundary wavelength (%) Tuning range typical (nm) (mm) (mm) FI-1250-4SL > 35 > 85 > 80 1200 - 1300 Ø4 14x23.5 84 51 102 000 04 FI-1310-4SL > 35 > 90 > 85 1260 - 1360 Ø4 14x23.5 84 50 1071 000 FI-1550-4SL > 35 > 90 > 85 1485 - 1615 Ø4 14x23.5 84 50 1072 000 Subject to technical changes LINOS Faraday Isolators Isolators with a Broad Tuning Range Technical Overview Introduction The function of the tunable LINOS Faraday isolators in the following chapter is based on a single stage isolator. Precision mechanics allow a continuous adjustment of the interaction between the magnetic field and the TGG crystal without moving any optical components. 18 It is possible to set the rotation angle to any value between 0° to 45° within the wavelength range in order to study the effects of varying degrees of feedback. Easy access to the blocked beam is provided by polarizing beam splitter cubes, which divert the blocked beam by 90°. Precision mechanics allow the exact reproduction of adjustments previously established. And with the • Ar+ and Kr+ lasers addition of an optional micrometer display, an angular • other Ion lasers resolution in the arc minute range is achievable. The • HeNe lasers incorporation of very powerful magnets ensures a • Other gas lasers compact and efficient design. • Diode lasers • Nd:YAG lasers Operation • Ti: Sapphire lasers The isolator can be mounted on rods, cylindrical • Cr:LiCAF lasers mounts or by using the assembly surfaces so that • Dye lasers the laser polarization can be oriented horizontally or • Alexandrite lasers vertically. The entry and exit polarizers can be easily • Mode-locked lasers cleaned by removing the security rings. • Short Pulse lasers Applications Faraday Rotator These isolators are suitable for all lasers operating For every laser line selected from 390 nm to a in the 390-420 nm respectively in the 500-1100 nm maximum of 1100 nm, every polarization direction wavelength range especially for: from 0° to 90° is precise and reproducible. LINOS Faraday Isolators 5mm Aperture Tunable Isolators, SV / SI-Series FI-x/y-5SV / FI-600/1100-5SI • Continuous adjustment for wavelength without movement of optical parts • Tunable with maximum transmission and isolation over the complete wavelength range • Isolation better than 30 dB, typically 38 - 42 dB over the entire wavelength range, custom isolation values on request • TGG crystal • Rare earth magnet • Access to blocked beam FI-x/y-5SV 19 • Mounting: via two M4 threaded holes at the bottom side and at the back side; 20 mm separation (5SV-version); 55 mm separation (5SI-version); or via base plate, or via angle bracket (5SV-version only) • Base plate included • Angle bracket included (5SV-version only) FI-600/1100-5SI • Damage threshold > 200 mJ / cm2 for pulses of 10 ns (1064 nm) • Damage threshold > 28 mJ / cm2 for pulses of 280 fs (850 nm, 20 Hz) FI-x/y-5SV, FI-x/y-5SI Order-No (mm) Dimensions base plate (LxWxH) (mm) 60x60x77 54x60x8 84 50 1046 000 60x60x77 54x60x8 84 50 1046 001 Ø5 60x60x77 54x60x8 84 50 1041 000 Ø5 80x80x125 88x90x8 Product Isolation, guaranteed / typical (dB) Transmission at design wavelength (%) Tuning range typical Aperture Dimensions Isolator (nm) (mm) FI-390/420-5SV > 30/38-42 > 90 390-420 Ø5 FI-420/460-5SV > 30/38-42 > 90 420-460 Ø5 FI-500/820-5SV > 30/38-42 > 90 500-820 FI-600/1100-5SI > 30/38-42 > 90 600-1100 84 50 1044 000 Subject to technical changes High quality A precise mechanics enables a continuous wavelength adjustment. Without movement of the optics a broad wavelength range is realized. LINOS Faraday Isolators 8mm Aperture Tunable Isolator, SI-Series FI-600/1100-8SI • Continuous adjustment for wavelength without movement of optical parts • Tunable with maximum transmission and isolation over the complete wavelength • Isolation better than 30 dB, typically 38-42 dB over the entire wavelength range, custom isolation values on request • TGG crystal • Rare earth magnet • Access to blocked beam FI-600/1100-8SI • Damage threshold > 200 mJ / cm2 for pulses of 10 ns (1064 nm) • Damage threshold > 28 mJ / cm2 for pulses of 280 fs (850 nm, 20 Hz) 20 • Mounting: via two M4 threaded holes at the bottom side and at the back side; 55 mm separation, or via base plate • Base plate included FI-600/1100-8SI Item Title FI-600/1100-8SI Isolation, guaranteed/ typical (dB) Transmission Tuning range typical Aperture Dimensions Isolator (%) (nm) (mm) (mm) Dimensions base plate (LxWxH) (mm) > 30/38-42 > 90 600 - 1100 Ø8 80x80x125 88x90x8 Order-No 84 50 1045 000 Subject to technical changes A closer look The excellent quality of the high-precision LINOS electro-optics from Qioptiq is a testament to decades of experience at both Gsänger and Qioptiq. The 40-year history of these products is marked by immense customer satisfaction, and has established Qioptiq as a leader in laser technology. Dr. Gsänger, founder of Gsänger Optics in Munich, was instrumental in the success of the electro-optics. Two Stage Faraday Isolators Technical Overview FI-x-5TI and FI-x-5TV Based on this special Diode lasers are extremely sensitive to reflected 60 dB isolation at the radiation. Standard Faraday isolators typically achieve ctively within the design wavelength, respectively between 30 dB and 40 dB isolation, which in some adjustment range of ±10 nm, makes Linos two stage cases is not sufficient to suppress undesirable Faraday isolators the best on the market. design a guaranteed feedback. DLI, Overview Our two stage LINOS Faraday isolators were The isolators of the DLI-series were developed for developed for the special requirements of diode the special requirements of diode lasers in the visible lasers and square the standard isolation of single stage spectrum and combine the outstanding isolation of Faraday isolators. At the heart of this development a two stage isolator with the flexibility of a tunable is the use of two coupled isolator stages together isolator. with the best polarizers available on the market. The DLI isolators are easily integrated into an existing This configuration combines the exit polarizer of setup and can be adjusted to match any wavelength the first stage with the entry polarizer of the second without changing the laser polarization or displacing stage to form one central polarizer. the laser beam. The isolators can be coarsely tuned by altering the effective magnetic field in the two Arranging the polarity of the two magnets to be isolator stages. A precise wavelength adjustment opposite to each other results in two benefits: is possible by rotating the central polarizer with The polarization direction of the transmitted light a micrometer set screw. The blocked radiation is remains unchanged in the transmission direction deflected out of the isolator at 90° with respect to and the effect of both magnetic fields is enhanced. the beam axis. It is not absorbed by the interior of Therefore this configuration also leads to a more the isolator, but is available at the side surfaces of the compact isolator and a reduction of the optical path polarizer and the exit window. length which in turn enhances the optical quality of the LINOS Faraday isolator. DLI Injection Locking The DLI injection version revolves this operating mode All optical surfaces are antireflection coated and and uses the exit window for in-coupling of the seed the surfaces normal to the beam axis are tilted. laser for injection locking while decoupling efficiently The polarizers are mounted in a way that allows the master and the slave laser from each other at easy cleaning of the external optical surfaces. This the same time. Like this stable mode locking (e.g. of guarantees that the isolation is not reduced by Ti:Sapphire lasers) is simplified. residual reflections and scattering from the isolator. 21 LINOS Faraday Isolators Applications All two stage LINOS Faraday isolators are typically used to improve the power and frequency stability of diode lasers used in spectroscopy, interferometry and precision control as well as in alignment applications. Since the output polarization and the beam position are conserved for all two stage LINOS Faraday isolators, the influence of the smallest feedback effects on the laser can be quantitatively examined. 22 LINOS Faraday Isolators 5mm Aperture Two Stage Faraday Isolators (non-tunable), TV / TI-Serie FI-x-TV / FI-x-TI • • • • Two coupled isolator stages in series Especially high isolation > 60 dB TGG crystal Rare earth magnet High quality High isolation (60 dB) and high transmission for wavelengths from 650 nm to 1060 nm is guaranteed. • TV-version: wavelength range ±10 nm depending on the central wavelength • TI-version: wavelength adjustable • Customized central wavelength on request • Mounting TV-version: via two M4 threaded holes at the bottom side, 30 mm separation • Mounting TI-version: via two M4 threaded holes at the bottom side or at the back side, 40 mm separation, or via base plate • Base plate included FI-x-TV FI-x-TI 23 • Damage threshold > 200 mJ / cm2 for pulses of 10 ns (1064 nm) • Damage threshold > 28 mJ / cm2 for pulses of 280 fs (850 nm, 20 Hz) FI-x-TV / FI-x-TI Product Isolation, guaranteed Transmission at design wavelength (%) (dB) Order-No (mm) Dimensions base plate (LxWxH) (mm) Tuning range typical Aperture Dimensions Isolator (nm) (mm) FI-650-TV ≥ 60 ≥ 80 - Ø5 40x40x106 - 84 51 1010 0044 FI-670-TV ≥ 60 ≥ 80 - Ø5 40x40x106 - 84 50 1060 020 FI-710-TV ≥ 60 ≥ 80 - Ø5 40x40x106 - 84 50 1060 019 FI-760-TV ≥ 60 ≥ 80 - Ø5 40x40x106 - 84 50 1060 017 FI-780-TV ≥ 60 ≥ 80 - Ø5 40x40x106 - 84 50 1060 002 FI-810-TV ≥ 60 ≥ 80 - Ø5 40x40x106 - 84 50 1060 003 FI-850-TV ≥ 60 ≥ 80 - Ø5 40x40x106 - 84 50 1060 009 FI-920-TI ≥ 60 ≥ 80 885-960 Ø5 58x58x131 70x58x8 84 50 1061 001 FI-950-TI ≥ 60 ≥ 80 915-990 Ø5 58x58x131 70x58x8 84 50 1061 002 FI-980-TI ≥ 60 ≥ 80 940-1020 Ø5 58x58x131 70x58x8 84 50 1061 003 FI-1060-TI ≥ 60 ≥ 80 1000-1080 Ø5 58x58x131 70x58x8 Other wavelengths available upon request 84 50 1061 004 Subject to technical changes LINOS Faraday Isolators 5mm Aperture Two Stage Faraday Isolators (tunable), DLI-Series Tunable Diode Laser Isolators DLI • Tunable with maximum isolation over the complete wavelength range • Two coupled isolator stages in series • Especially high Isolation > 60 dB • TGG crystal • Rare earth magnet • Input polarization = output polarization • Individually calibrated adjustment curve supplied with each isolator 24 • Mounting: via four M4 threaded holes at the bottom side and at the back side; 40 x 40 mm separation, or via base plate • Base plate included • Special version for injection locking on request • Damage threshold > 200 mJ / cm2 for pulses of 10 ns (1064 nm) • Damage threshold > 28 mJ / cm2 for pulses of 280 fs (850 nm, 20 Hz) DLI-x Order-No Isolation, guaranteed (dB) Transmission at design wavelength (%) Tuning range typical (nm) Aperture DLI 1 ≥ 60 ≥ 80 754-890 Ø5 50x50x97 50x60x10 84 50 1003 000 DLI 2 ≥ 60 ≥ 80 610-700 Ø5 50x50x97 50x60x10 84 50 1002 000 DLI 3 ≥ 60 ≥ 80 650-760 Ø5 50x50x97 50x60x10 (mm) Dimensions Isolator (mm) Dimensions base plate (LxWxH) (mm) Product 84 50 1001 000 Subject to technical changes A closer look An easy integration of DLI isolators is possible. They can be adjusted easily without changing laser polarization or beam position. Special versions for injection locking on request. LINOS Faraday Isolators Faraday Isolators - Questionnaire QIOPTIQ Photonics GmbH & Co. KG Crystal Technology Hans-Riedl-Straße 9 85622 Feldkirchen Germany Phone Fax E-mail Internet +49(0)89 255 458-100 +49(0)89 255 458-895 laser@qioptiq.de www.qioptiq.com • Full Name: _____________________________________________ • Company Name: ________________________________________ • Address: _______________________________________________ • Zip Code: ______________________________________________ • Country: _______________________________________________ • Phone: ________________________________________________ • Fax: ___________________________________________________ • City: __________________________________________________ 1. Laser Parameters at Location of Faraday Isolator 1.1 Wavelength [nm] ____________________________________________________________________________________________________ 1.2 Type of Laser _______________________________________________________________________________________________________ 1.3 Beam Diameter, 1/e2 [mm] _____________________________________________________________________________________________ 1.4 CW / Pulsed ________________________________________________________________________________________________________ 1.5 Laser Pulse Energy [mJ] _______________________________________________________________________________________________ 1.6 Laser Pulse Duration [ps] ______________________________________________________________________________________________ 1.7 Repetition Rate [Hz] __________________________________________________________________________________________________ 2. Type of Faraday Isolator 2.1 Hard Aperture [mm] __________________________________________________________________________________________________ 2.2 Transmission [%] ____________________________________________________________________________________________________ 2.3 Extinction1) [dB] _____________________________________________________________________________________________________ 1) Single stage: > 30dB, typically 38 - 42dB. Two stage: > 60dB, custom isolation values on request 3. Miscellaneous 3.1 Temperature @ operation ____________________________________________________________________________________________3 3.2 Year [No. of Units] Target Price / Unit ____________________________________________________________________________________ 4. Comments / Remarks: ______________________________________________________________________________________________________________________ ______________________________________________________________________________________________________________________ ______________________________________________________________________________________________________________________ 25 LINOS Pockels Cells & Laser Modulators The LINOS Pockels Cells and Laser Modulators Electro-optical modulators are divided into modulators (for applications outside of laser cavity) ! and Pockels cells (for applications within laser cavity) Special features: on the following pages. On request we can customize products for You can choose from a large selection of crystals for wavelengths in the 250 nm to 3 μm range. a variety of applications, apertures and laser outputs, 26 covering the entire wavelength range from 250 nm Ideal areas of application: to 3 μm. The consistently high Qioptiq quality and Phase and intensity modulation; Q-switching; pulse incomparable value of our products is assured by picking. a combination of our many years of experience, an intelligent design, modern engineering with computer simulations and sophisticated processing. In addition we offer a broad range of fast and highperformance high-voltage drivers. For details, please contact our staff from the customer service. More information: Qioptiq quality criteria: Best possible extinction ratio for each crystal High transmission Patented isolation system minimizes piezoelectric oscillation for exceptionally precise switching operations (optional) Contact us to receive the complete Qioptiq offer in our LINOS catalog by mail, or look for it under: www.qioptiq-shop.com LINOS Pockels Cells & Laser Modulators lators Pockels Cells, Technical Information The Electro-Optic Effect Q-Switching The linear electro-optic effect, also known as the Laser activity begins when the threshold condition Pockels effect, describes the variation of the refractive is met: the optical amplification for one round trip index of an optical medium under the influence of an in the laser resonator is greater than the losses external electrical field. In this case certain crystals (output coupling, diffraction, absorption, scattering). become birefringent in the direction of the optical The laser continues emitting until either the stored axis which is isotropic without an applied voltage. energy is exhausted, or the input from the pump source stops. Only a fraction of the storage capacity When linearly polarized light propagates along the is effectively used in the operating mode. If it were direction of the optical axis of the crystal, its state possible to block the laser action long enough to of polarization remains unchanged as long as no store a maximum energy, then this energy could be voltage is applied. When a voltage is applied, the released in a very short time period. light exits the crystal in a state of polarization which is in general elliptical. A method to accomplish this is called Q-switching. The resonator quality, which represents a measure This way phase plates can be realized in analogy of the losses in the resonator, is kept low until the to conventional polarization optics. Phase plates maximum energy is stored. A rapid increase of the introduce a phase shift between the ordinary and resonator quality then takes the laser high above the extraordinary beam. Unlike conventional optics, threshold, and the stored energy can be released the magnitude of the phase shift can be adjusted in a very short time. The resonator quality can be with an externally applied voltage and a λ/4 or λ/2 controlled as a function of time in a number of retardation can be achieved at a given wavelength. ways. In particular, deep modulation of the resonator This presupposes that the plane of polarization of quality is possible with components that influence the incident light bisects the right angle between the state of polarization of the light. Rotating the the axes which have been electrically induced. In the polarization plane of linearly polarized light by 90°, longitudinal Pockels effect the direction of the light the light can be guided out of the laser by a polarizer. beam is parallel to the direction of the electric field. In the transverse Pockels cell they are perpendicular The modulation depth, apart from the homogeneity to each other. The most common application of the of the 90° rotation, is only determined by the degree Pockels cell is the switching of the quality factor of a of extinction of the polarizer. The linear electro- laser cavity. optical (Pockels) effect plays a predominant role besides the linear magneto-optical (Faraday) and the quadratic electro-optical (Kerr) effect. Typical electrooptic Q-switches operate in a so called λ/4 mode. 27 LINOS Pockels Cells a) Off Q-Switching 5 Light emitted by the laser rod (1) is linearly polarized 1 by the polarizer (2). If a λ/4 voltage is applied to the Pockels cell (3), then on exit, the light is circularly 2 polarized. After reflection from the resonator mirror 3 (4) and a further passage through the Pockels cell, 6 the light is once again polarized, but the plane of 4 polarization has been rotated by 90°. The light is deflected out of the resonator at the polarizer, but the resonator quality is low and the laser does not start 28 On Q-Switching to oscillate. At the moment the maximum storage capacity of the active medium has been reached, Pulse Picking the voltage of the Pockels cell is turned off very Typically femto second lasers emit pulses with a rapidly; the resonator quality increases immediately repetition rate of several 10 MHz. However, many and a very short laser pulse is emitted. The use of a applications like regenerative amplifying require polarizer can be omitted for active materials which slower repetition rates. Here a Pockels cell can be show polarization dependent amplification (e.g. used as an optical switch: by applying ultra fast and Nd:YAlO3, Alexandrite, Ruby, etc.). precisely timed λ/2-voltage pulses on the Pockels cell, the polarization of the laser light can be controlled 5 pulse wise. Thus, combined with a polarizer the Pockels cell works as an optical gate. 1 Selection Criteria 2 The selection of the correct Q-switch for a given 3 application is determined by the excitation of the 4 laser, the required pulse parameters, the switching voltage, the switching speed of the Pockels cell, Off Q-Switching the wavelength, polarization state and degree of coherence of the light. b) On Q-Switching Unlike off Q-switching, a λ/4 plate (6) is used Type of Excitation between the Pockels cell (3) and the resonator mirror Basically, both off and on Q-switching are equivalent (4). If no voltage is applied to the Pockels cell the in physical terms for both cw and for pulse pumped laser resonator is blocked: no laser action takes place. lasers. On Q-switching is, however, recommended A voltage pulse opens the resonator and permits the in cw operation because a high voltage pulse and emission of laser light. not a rapid high voltage switch-off is necessary to generate a laser pulse. This method also extends the LINOS Pockels Cells life time of the cell. Over a long period of time, the The CPC and SPC series cells are suitable for small, continuous application of a high voltage would lead compact lasers and especially for OEM applications. to electrochemical degradation effects in the KD*P They are available as dry cells and immersion cells. crystal. We advice the use of an on Q-switching driver. The level of deuterium content in an electro-optic crystal influences the spectral position of the infrared Off Q-switching is more advantageous for lasers edge. The higher the deuterium level the further the stimulated with flash lamps because the λ/4 plate is absorption edge is shifted into the infrared spectral not required. In order to prevent the electrochemical region: for Nd:YAG at 1064 nm, the laser absorption degradation of the KD*P crystal in the off Q-switching decreases. Crystals, which are deuterated to > 98%, mode we recommend a trigger scheme in which the are available for lasers with a high repetition rate or a high voltage is turned off between the flashlamp high average output power. pulses and turned on to close the laser cavity before the onset of the pump pulse. Pockels Cell Switching Voltage Using double Pockels cells can half the switching The CPC- and SPC-series cells are recommended for voltage. This is achieved by switching two crystals diode pumped solid state lasers. These cells are ultra electrically in parallel and optically in series. The compact and will operate in a short length resonator: damage threshold is very high and the cells are this is necessary to achieve very short laser pulses. mainly used outside the resonator. Pulse Parameters Electro-optic material The LM n, LM n IM, and LM n SG series cells are The selection of the electro-optic material depends recommended for lasers with a power density of on its transmission range. Further on, the laser up to 500 MW / cm². The LM n and LM n SG cells parameters as well as the application have to be are used for lasers with very high amplification. The taken into account. SG cells with Sol-Gel technology have the same transmission as the immersion cells and both are For wavelengths from 0.25 μm to 1.1 μm, longitudinal typically used when a higher transmission is required. Pockels cells made of KD*P and a deuterium content At high pulse energies LMx cells are preferred. of 95% should be considered. If the deuterium content is higher the absorption edge of the material Brewster Pockels cells are recommended for lasers is shifted further into the infrared. KD*P crystal cells with low amplification, such as Alexandrite lasers. with a deuterium content > 98% can be used up to The passive resonator losses are minimal due to a 1.3 μm. high transmission of 99%. KD*P can be grown with high optical uniformity and is therefore recommended for large apertures. 29 LINOS Pockels Cells The spectral window of BBO also ranges from cell will be determined by these factors. Thin film 0.25 μm to 1.3 μm. In addition, BBO crystals provide a polarizers are used and the substrate is mounted at low dielectric constant and a high damage threshold. the Brewster angle. A parallel beam displacement Therefore, BBO is recommended for lasers with high of 1 mm results from this configuration and can be repetition rate and high average powers. compensated by adjusting the resonator. RTP, with an optical bandwidth from 0.5 μm up to 1.5 μm, combines low switching voltage and high laser induced damage threshold. Together with its relative insensitivity for Piezo effects RTP is best 30 suited for precise switching in high repetition rate lasers with super fast voltage drivers. For wavelengths from 1.5 μm up to 3 μm we recommend LiNbO3. Suppression of Piezo effects Like any other insulating material electro optical crystals show Piezo effects when high voltage is applied. The extent of the Piezo ringing depends on the electro optic material and usually its effect on the extinction ratio is negligible when used for Q-switching. However, for pulse picking applications, which require highly precise switching behaviour, Qioptiq offers specially Piezo damped Pockels cells which suppress these ringing effects efficiently. State of Polarization The MIQS- and CIQS-series cells are supplied with an integrated polarizer: the alignment of the Pockels cell relative to the polarizer thus becomes unnecessary. The rotational position of the cell relative to the resonator axis can be chosen at will. However, should the polarization state of the light in the resonator be determined by other components, such as anisotropic amplification of the laser crystal or Brewster surfaces of the laser rod, then the rotational position of the LINOS Pockels Cells Product Overview 31 LINOS Pockels Cells KD*P Pockels Cells LM Series • • • • KD*P-based Pockels cell High crystal deuteration (typical) > 98% Wave front deformation: < λ/4 Damage threshold: > 500 MW / cm2 at 1064 nm, 10 ns, 1 Hz (typical, not guaranteed) • Optionally available as dry, immersion (IM) or Sol-Gel (SG) version • Optionally available with λ/4 disk: LM n (IM) (SG) WP • Optionally available with dust protection caps for hermetically sealed installation: LM n (IM) (SG) DT LM 8 (IM) (SG) • Other specifications upon request • Please state the applied wavelength when ordering 32 LM 10 (IM) (SG) LM 12 (IM) (SG) LM 16 (IM) (SG) KD*P Pockels Cells LM Series Product Clear Aperture (mm) Transmission typical (%) Extinction ratio (voltage-free) λ/4 voltage Capacity (pF) Order-No LM 8 Ø8 91 > 1000:1 3.2 kV at 1064 nm, 20°C 4 84 50 3001 005 LM 8 IM Ø8 98 > 1000:1 3.2 kV at 1064 nm, 20°C 4 84 50 3011 002 LM 8 SG Ø 7.5 98 > 1000:1 3.2 kV at 1064 nm, 20°C 4 84 50 3006 001 LM 10 Ø 10 91 > 1000:1 3.2 kV at 1064 nm, 20°C 5 84 50 3002 001 LM 10 IM Ø 10 98 > 1000:1 3.2 kV at 1064 nm, 20°C 5 84 50 3012 001 LM 10 SG Ø 9.5 98 > 1000:1 3.2 kV at 1064 nm, 20°C 5 84 50 3007 005 LM 12 Ø 12 91 > 1000:1 3.2 kV at 1064 nm, 20°C 6 84 50 3003 001 LM 12 IM Ø 12 98 > 1000:1 3.2 kV at 1064 nm, 20°C 6 84 50 3013 003 LM 12 SG Ø 11 98 > 1000:1 3.2 kV at 1064 nm, 20°C 6 84 50 3008 001 LM 16 Ø 16 91 > 1000:1 3.2 kV at 1064 nm, 20°C 6 84 50 3004 000 LM 16 IM Ø 16 98 > 1000:1 3.2 kV at 1064 nm, 20°C 6 84 50 3014 000 LM 16 SG Ø 15 98 > 1000:1 3.2 kV at 1064 nm, 20°C 6 84 50 3009 000 All order numbers valid for 1064 nm. Subject to technical changes LINOS Pockels Cells KD*P Pockels Cells MIQS 8 Series • KD*P-based Pockels cell • High crystal deuteration (typical) > 98% • With integrated, pre-adjusted Brewster polarizer • Compact design for OEM applications • Wave front deformation: < λ/4 • Damage threshold: > 500 MW / cm2 at 1064 nm, 10 ns, 1 Hz (typical, not guaranteed) MIQS 8 (IM) (SG) • Optionally available as dry, immersion (IM) or Sol-Gel (SG) version • Optionally available with λ/4 disk: MIQS 8 (IM) (SG) WP • Other specifications upon request • Please state the applied wavelength when ordering 33 KD*P Pockels Cells MIQS 8 Series Product Clear aperture (mm) Transmission typical (%) Extinction ratio (voltage-free) λ/4 voltage Capacity (pF) Order-No MIQS 8 Ø8 88 > 500:1 3.2 kV at 1064 nm, 20°C 4 84 50 3070 001 MIQS 8 IM Ø8 95 > 500:1 3.2 kV at 1064 nm, 20°C 4 84 50 3071 017 MIQS 8 SG Ø 7.5 95 > 500:1 3.2 kV at 1064 nm, 20°C 4 All order numbers valid for 1064 nm. 84 50 3071 024 Subject to technical changes LINOS Pockels Cells KD*P-Pockels Cells CPC Series • • • • • KD*P-based Pockels cell High crystal deuteration (typical) > 98% Compact design for OEM applications Wave front deformation: < λ/4 Damage threshold: > 500 MW / cm2 at 1064 nm, 10 ns, 1 Hz (typical, not guaranteed) • Optionally available as dry, immersion (IM) or Sol-Gel (SG) version • Optionally available with λ/4 disk: CPC n (IM) (SG) WP CPC 8 (IM) (SG) • Other specifications upon request • Please state the applied wavelength when ordering 34 CPC 10 (IM) (SG) CPC 12 (IM) (SG) KD*P Pockels Cells CPC Series Product Clear Aperture (mm) Transmission typical (%) Extinction ratio1) (voltage-free) λ/4 voltage Capacity (pF) Order-No CPC 8 Ø8 91 > 3000:1 3.2 kV at 1064 nm, 20°C 4 84 50 3091 001 CPC 8 IM Ø8 98 > 3000:1 3.2 kV at 1064 nm, 20°C 4 84 50 3092 001 CPC 8 SG Ø 7.5 98 > 3000:1 3.2 kV at 1064 nm, 20°C 4 84 50 3093 000 CPC 10 Ø 10 91 > 3000:1 3.2 kV at 1064 nm, 20°C 6 84 50 3094 000 CPC 10 IM Ø 10 98 > 3000:1 3.2 kV at 1064 nm, 20°C 6 84 50 3094 001 CPC 10 SG Ø 9.5 98 > 3000:1 3.2 kV at 1064 nm, 20°C 6 84 50 3096 000 CPC 12 Ø 12 91 > 3000:1 3.2 kV at 1064 nm, 20°C 8 84 50 3097 000 CPC 12 IM Ø 12 98 > 3000:1 3.2 kV at 1064 nm, 20°C 8 84 50 3098 000 CPC 12 SG Ø 11 98 > 3000:1 3.2 kV at 1064 nm, 20°C 8 > 1000 : 1 λ/2-voltage applied All order numbers valid for 1064 nm. 1) 84 50 3099 000 Subject to technical changes LINOS Pockels Cells KD*P Pockels Cells CIQS Series • KD*P-based Pockels cell • High crystal deuteration (typical) > 98% • With integrated, pre-adjusted Brewster polarizer • Compact design for OEM applications • Wave front deformation: < λ/4 • Damage threshold: > 500 MW / cm2 at 1064 nm, 10 ns, 1 Hz (typical, not guaranteed) CIQS 8 (IM) (SG) • Optionally available as dry, immersion (IM) or Sol-Gel (SG) version • Optionally available with λ/4 disk: CIQS n (IM) (SG) WP • Other specifications upon request • Please state the applied wavelength when ordering CIQS 10 (IM) (SG) CIQS 12 (IM) (SG) KD*P Pockels Cells CIQS Series Product Clear Aperture (mm) Transmission typical (%) Extinction ratio (voltage-free) λ/4 voltage Capacity (pF) Order-No CIQS 8 Ø8 88 > 500:1 3.2 kV at 1064 nm, 20°C 4 84 50 3070 000 CIQS 8 IM Ø8 95 > 500:1 3.2 kV at 1064 nm, 20°C 4 84 51 3010 0004 CIQS 8 SG Ø 7.5 95 > 500:1 3.2 kV at 1064 nm, 20°C 4 84 50 3071 022 CIQS 10 Ø 10 88 > 500:1 3.2 kV at 1064 nm, 20°C 6 84 50 3073 000 CIQS 10 IM Ø 10 95 > 500:1 3.2 kV at 1064 nm, 20°C 6 84 50 3074 001 CIQS 10 SG Ø 9.5 95 > 500:1 3.2 kV at 1064 nm, 20°C 6 84 50 3075 001 CIQS 12 Ø 12 88 > 500:1 3.2 kV at 1064 nm, 20°C 8 84 50 3076 000 CIQS 12 IM Ø 12 95 > 500:1 3.2 kV at 1064 nm, 20°C 8 84 50 3077 000 CIQS 12 SG Ø 11 95 > 500:1 3.2 kV at 1064 nm, 20°C 8 All order numbers valid for 1064 nm. 84 50 3078 002 Subject to technical changes 35 LINOS Pockels Cells KD*P Pockels Cells SPC 4 Series • • • • • KD*P-based Pockels cell High crystal deuteration (typical) > 98% Very compact design for OEM applications Wave front deformation: < λ/4 Damage threshold: > 500 MW / cm2 at 1064 nm, 10 ns, 1 Hz (typical, not guaranteed) • Optionally available as dry, immersion (IM) or Sol-Gel (SG) version • Optionally available with integrated, pre-adjusted Brewster polarizer • Optionally available with λ/4 disk: SPC4 (IM) (SG) WP SPC 4 (IM) (SG) • Other specifications upon request • Please state applied wavelength when ordering 36 KD*P Pockels Cells SPC 4 Series Transmission typical (%) Capacity (pF) Order-No 3.2 kV at 1064 nm, 20°C 2 84 50 3036 007 3.2 kV at 1064 nm, 20°C 2 84 50 3036 004 Clear aperture (mm) SPC 4 Ø4 91 > 3000:1 SPC 4 IM Ø4 98 > 3000:1 SPC 4 SG Ø 3.5 98 > 3000:1 3.2 kV at 1064 nm, 20°C 2 All order numbers valid for 1064 nm, maximum voltage 4 kV. A closer look The compact size of approx. 13 x 15 x 16 mm² enables size critical OEM-applications. Extinction ratio (voltage-free) λ/4 voltage Product 84 50 3052 001 Subject to technical changes LINOS Pockels Cells KD*P Double Pockels Cells DPZ Series • • • • KD*P-based Pockels cell High crystal deuteration (typical) > 98% Two crystals in series Damage threshold: > 500 MW / cm2 at 1064 nm, 10 ns, 1 Hz (typical, not guaranteed) • Optionally available as dry, immersion (IM) or Sol-Gel (SG) version • λ/4 voltage: 1.6 kV at 1064 nm, 20°C DPZ 8 • Other specifications on request • Please state the applied wavelength when ordering 37 DPZ 8 (IM) DPZ 8 (SG) KD*P Double Pockels Cells DPZ Series Product Clear aperture (mm) Transmission typical (%) Extinction ratio (voltage-free) λ/2- voltage Capacity (pF) Order-No DPZ 8 Ø8 84 > 500:1 3.2 kV at 1064 nm, 20°C 8 84 50 3041 001 DPZ 8 IM Ø8 95 > 1000:1 3.2 kV at 1064 nm, 20°C 8 84 50 3042 000 DPZ 8 SG Ø 7.5 95 > 1000:1 3.2 kV at 1064 nm, 20°C 8 All order numbers valid for 1064 nm. 84 50 3043 005 Subject to technical changes LINOS Pockels Cells KD*P Brewster Pockels Cell BPC 8 • • • • • KD*P-based Pockels cell High crystal deuteration (typical) > 98% Crystal with Brewster angle cut No coatings High transmission for lasers with low amplification • Beam offset: 8.4 mm • Wave front deformation: < λ/4 • Damage threshold: > 500 MW / cm2 at 1064 nm, 10 ns, 1 Hz (typical, not guaranteed) • Other specifications on request • Please state the applied wavelength when ordering 38 KD*P Brewster Pockels Cell BPC 8 Product Clear aperture (mm) Transmission typical (%) Extinction ratio (voltage-free) λ/4 voltage Capacity (pF) Order-No BPC 8 Ø 7.4 99 > 1000:1 2.5 kV at 755 nm, 20°C 4 84 50 3034 001 Subject to technical changes LINOS Pockels Cells LiNbO3 Pockels Cells • LiNbO3-based Pockels cell • Preferably for Er:YAG-, Ho:YAG-, Tm:YAG-laser • For wavelengths up to 3 μm • Brewster cells BPZ 5 IR for laser with low amplification • Compact design • Wave front deformation: < λ/4 • Damage threshold: > 100 MW / cm2 at 1064 nm, 10 ns, 1 Hz (typical, not guaranteed) LM 7 IR • Other specifications on request • Please state the applied wavelength when ordering 39 LM 9 IR BPZ 5 IR LiNbO3 Pockels Cells 1) Product Clear aperture (mm) Transmission typical (%) Extinction ratio (voltage-free) λ/4-voltage (kV) Order-No LM 7 IR1) 7.45 x 7.45 > 98 >100:1 3kV1) 84 50 3030 001 LM 9 IR2) 9x9 > 98 >100:1 4.5kV2) 84 50 3032 001 BPZ 5 IR 5x5 > 99 >100:1 1.9kV1) 2 μm wavelength 2) 3 μm wavelength 84 51 3040 0003 Subject to technical changes LINOS Pockels Cells BBO Pockels Cells BBPC Series • BBO-based Pockels cell • Suited for Q-switch applications with high repetition rates • Wave front deformation: < λ/4 • Damage threshold: > 300 MW / cm2 at 1064 nm, 10 ns, 1 Hz (typical, not guaranteed) • Optionally available with integrated Brewster polarizer: BBPC n BP • Optionally available with integrated λ/ 4 disk: BBPC n WP • Optionally available with Piezo attenuator: BBPC n pp BBPC • Other specifications on request • Please state the applied wavelength when ordering 40 BBO Pockels Cells BBPC Series 1) Product Clear aperture (mm) Transmission typical (%) Extinction ratio (voltage-free) λ/4-voltage1) Capacity (pF) Order-No BBPC 3 Ø2.6 98 >1000:1 3.6kV 4 84 50 3083 012 BBPC 4 Ø3.6 98 >1000:1 4.8kV 4 84 50 3083 008 BBPC 5 Ø4.6 98 >1000:1 6.0kV 4 DC at 1064 nm All order numbers valid for 1064 nm. 84 50 3083 020 Subject to technical changes LINOS Pockels Cells BBO Double Pockels Cells DBBPC Series • • • • BBO-based double Pockels cell Two crystals in series With Piezo attenuator Suited for Q-switch applications with high repetition rates • Damage threshold: > 300 MW / cm2 at 1064 nm, 10 ns, 1 kHz (typical, not guaranteed) DBBPC • Other specifications on request • Please state the applied wavelength when ordering 41 Double BBO Pockels Cells DBBPC Series Product Clear aperture (mm) Transmission typical (%) Extinction ratio (voltage-free) λ/4-voltage1) Capacity (pF) Order-No DBBPC 3 Ø2.6 98 > 1000:1 1.8kV 8 84 51 3020 0010 DBBPC 4 Ø3.6 98 > 1000:1 2.4kV 8 84 51 3020 0011 DBBPC 5 Ø4.6 98 > 1000:1 3.0kV 8 84 51 3020 0001 DBBPC 6 Ø5.6 98 > 1000:1 3.6kV 8 1) DC at 1064 nm All order numbers valid for 1064 nm. High quality All pockels cells series DBBPC feature a piezodamping and are ideally suited for applications which require a precise switch. 84 51 3020 0008 Subject to technical changes LINOS Pockels Cells RTPC Pockels Cells Series • RTP-based Pockels cell • Suited for Q-switch applications with high repetition rates • Two crystals in compensation layout • Wave front deformation: < λ/4 • Damage threshold: > 600 MW / cm2 at 1064 nm, 10 ns, 1 Hz (typical, not guaranteed) • SC version with short crystals • Optionally available with integrated Brewster polarizer: RTPC n BP • Optionally available with integrated λ/4 disk: RTPC n WP RTPC 4 SC • Other specifications on request • Please state the applied wavelength when ordering 42 RTPC 3, RTPC 4 RTPC Pockels Cells Series Product Clear aperture (mm) Transmission typical (%) Extinction ratio (voltage-free) λ/4 voltage1) Capacity (pF) Order-No RTPC 3 Ø2.6 98 > 200:1 0.5kV 3 84 50 3080 018 RTPC 4 SC Ø3.6 98 > 200:1 1.3kV 3 84 50 3080 021 RTPC 4 Ø3.6 98 > 200:1 0.65kV 3 1) DC at 1064 nm All order numbers valid for 1064 nm High quality An extremely low switch-voltage combined with high damaging threshold enable applications where a precise switching with high repetition rates and very fast drivers is essential. 84 51 3030 0007 Subject to technical changes LINOS Pockels Cells Pockels Cells Positioner • Compact and stable design • Easy adjustment of yaw, pitch and rotation • Adjustment via fine thread screws • For Pockels cells with a diameter of up to 35 mm • Optionally special OEM modifications available Positioner 25 (Pockels cell shown not included) 43 Positioner 35 (Pockels cells shown not included) Pockels Cells Positioner Product Diameter Pockels cell (mm) Tilt range Beam height (mm) Dimensions (mm3) Order-No Positioner 25 12.7 ±4° 24 46 x 46 x 40 84 50 3021 127 Positioner 25 19 ±4° 24 46 x 46 x 40 84 50 3021 190 Positioner 25 21 ±4° 24 46 x 46 x 40 84 50 3021 210 Positioner 25 23 ±4° 24 46 x 46 x 40 84 50 3021 230 Positioner 25 25 ±4° 24 46 x 46 x 40 84 50 3021 250 Positioner 25 25.4 ±4° 24 46 x 46 x 40 84 50 3021 254 Positioner 35 35 ±4° 24 56 x 54 x 40 84 50 3021 350 Subject to technical changes LINOS Pockels Cells Pockels Cells - Questionnaire QIOPTIQ Photonics GmbH & Co. KG Crystal Technology Hans-Riedl-Straße 9 85622 Feldkirchen Germany Phone Fax E-mail Internet +49(0)89 255 458-100 +49(0)89 255 458-895 laser@qioptiq.de www.qioptiq.com • Full Name: _____________________________________________ • Company Name: ________________________________________ • Address: _______________________________________________ • Zip Code: ______________________________________________ • Country: _______________________________________________ • Phone: ________________________________________________ • Fax: ___________________________________________________ • City: __________________________________________________ 1. Laser Pulse Parameter at Location of Pockels Cell1) 44 1.1 Wavelength [nm] ____________________________________________________________________________________________________ 1.2 Laser Active Medium ________________________________________________________________________________________________ 1.3 Beam Diameter, 1/e2 [mm] ____________________________________________________________________________________________ 1.4 Laser Pulse Energy1) __________________________________________________________________________________________________ 1.5 Laser Pulse Duration _________________________________________________________________________________________________ 1.6 Operating mode, (Mode Locking, Q-switch, Pulse Picking, Intensity Modulation) ____________________________________________________________________________________ 2. Type of Pockels Cell 2.1 Hard Aperture [mm] _________________________________________________________________________________________________ 2.2 Transmission[%] ____________________________________________________________________________________________________ 2.3 Maximum Extinction [1:x] _____________________________________________________________________________________________ 2.4 Crystal [KD*P, BBO, RTP] _____________________________________________________________________________________________ 2.5 Operation mode (single pass or double pass)[λ/4 or λ/2] ___________________________________________________________________ 3. Timing Requirements of High Voltage Switch 3.1 Regenerative / Pulse Picker / Q - Switch __________________________________________________________________________________ 3.2 For Regenerative Amplifier / Pulse Picker: - Trigger Electronics for RVD required [Yes/No] ___________________________________________________________________________ - Repetition Rate of Master Osc. [MHz] _________________________________________________________________________________ - Repetition Rate of Regen. Amp. [kHz] _________________________________________________________________________________ - max. rise / fall time of rectangular HV pulse [ns] _________________________________________________________________________ - min. / max. temporal width of rectangular HV pulse [ns] __________________________________________________________________ - range of plateau voltage ____________________________________________________________________________________________ 3.3 For Q-switched Laser - ON / OFF Q-Switching _____________________________________________________________________________________________ - Rep. Rate of Q-switched Laser [kHz] _________________________________________________________________________________ 4. Accessories 4.1 Brewsterplate Polarizer [Yes / No] ______________________________________________________________________________________ 4.2 λ/4 - Plate (for ON-Q-Switching) [Yes / No] ______________________________________________________________________________ 5. Miscellaneous 5.1 Temperature @ operation [°C] _________________________________________________________________________________________ 5.2 Humidity @ operation [%] ____________________________________________________________________________________________ 5.3 Year [No. of Units] Target Price / Unit _________________________________________________________________________________ 6. Comments / Remarks: ______________________________________________________________________________________________________________________ ______________________________________________________________________________________________________________________ ______________________________________________________________________________________________________________________ 1) EPC = EOP/(1-R), EPC: pulse energy at location of Pockels cell; EOP: pulse energy at output of laser; R: reflectivity of output coupler; regenerative amplifier: at the end of the amplification cycle LINOS Laser Modulators Laser Modulators Technical Overview If the laser beam is polarized in the direction of Electro-optical crystals are characterized by their the optical axis, no polarization rotation, but pure ability to change optical path length in function of an phase retardation will occur. In principle this allows applied external voltage. This change depends on the the user to operate the LM 0202 modulator as a direction of polarization of the irradiated light. At λ/2 phase modulator. In this configuration, optimized voltage, the path length difference of orthogonally for minimum background retardation, two of the polarized beams is just half of the wavelength. With four crystals are electro-optically active for phase a suitable orientation of the crystals, the polarization modulation. A special model, LM 0202 PHAS, is direction of the irradiated light is rotated 90°: in this available with a crystal configuration that uses all state the light is extinguished by a polarizer. Varying four crystals for phase modulation. 45 the applied voltage allows quick modulation of the laser beam intensity. The performance of an electro- The PM 25 phase modulator, is a Brewster modulator optic modulator can be understood very simply as of high optical quality and should be used for that of a retardation plate with electrically adjustable loss sensitive applications, especially intracavity retardation. modulation. Mounting the modulator in the resonator is simple, as there is no beam deviation or LM 0202 series modulators use the transverse displacement. electro-optical effect: the direction of the light beam and electric field are orthogonal. In this configuration, All modulators use electro-optical crystals that long crystals with a small cross section have a low possess strong natural birefringence. The crystals are halfwave voltage used in order of compensation and there is no beam deviation or displacement. Since most of the electro-optical crystals operate with a strong background of natural birefringence, Electro-optic modulators generally require linearly a compensation scheme is used. Each modulator in polarized laser light. If the laser light is not sufficiently the LM 0202 series has four crystals as a matched polarized by itself, an additional polarizer must be ensemble. used. These crystals are fabricated with deviations in length less than 100 nm. The crystals are operated optically in series and electrically parallel. The LM 0202 P intensity modulator has an integrated polarizer that is used as an analyzer. The crystal orientation of the LM 0202 and LM 0202P modulators has been optimized to minimize the The modulator voltage input plugs are isolated from retardation caused by natural birefringence. Just as in the housing and directly connected to the crystals. A an ordinary retardation plate, the polarization of the change of the laser intensity can be observed when laser beam has to be adjusted at 45° to the optical the applied voltage is changed. By subsequently axis in order to achieve a proper 90° rotation. adjusting voltage and rotation, an extinction better than 250:1 can be achieved. Selected models with better extinction ratios are available on request. LINOS Laser Modulators Operating an electro-optical modulator between crossed, or parallel, polarizers yields an intensity variation given by the following formula: Applications The LM 0202 or LM 13 series electro-optical 2 I = Io · sin (U/Uλ/2 · π /2) modulators are typically used when intensity, Uλ/2 - half wave voltage power, phase or polarization state modulation is Io - input intensity required. The devices are ideal for continuous or U - signal voltage pulsed laser applications. Standard models, in many configurations, are available for wavelength ranges 46 It has been assumed that the appropriate offset or for definite wavelengths between 250 to 1100 nm voltage has been applied for maximum extinction. and operation up to 3000 nm is possible with special The offset voltage causes a shift of the intensity curve crystals. over the voltage. The halfwave voltage is proportional to the wavelength λ, to the crystal thickness d and in The modulators are typically used with diode lasers, reverse proportional to the crystal length l: solid state lasers, ion lasers, gas lasers or white light lasers. These devices are being used in the fields of Here n0 is the refractive index of the ordinary beam reprography, stereo lithography, laser projection, and r63 the electro-optical coefficient of the crystal. optical storage, printing, research and development and communication engineering in the laser industry. In many cases it is advantageous to select an offset voltage such that the first order intensity varies The PM 25 and PM-CBB series are typically used linearly with voltage. This is achieved by setting the for fast intra-cavity phase modulation. Therefore offset voltage to the value required for maximum very fast control loops, with high feedback gain for extinction minus frequency and phase stabilization, can be constructed ½ · Uλ/2 for precision lasers. The LM 0202 series modulators are hermetically Selection Criteria sealed. They can be operated at pressures from The required wavelength and aperture are determined 100 mbar to 1500 mbar and at a temperature range based on the existing laser system. Very high laser between 0°C to 50°C. power, in the multiwatt range, requires a large aperture. Laser lines in the short wave spectral region Standard models are designed for horizontal can work problem free with modulators having low operation. Modulators for vertical use are available by electro-optical sensitivity: this gives rise to advantages request. The modulator windows are easily cleaned in bandwidth and size. A Brewster modulator of with a mild organic solvent. high optical quality should be used for loss sensitive applications, especially intracavity modulation. LINOS Laser Modulators Digital Pulse Amplifier LIV 20-iso • For all laser modulators with λ/2 voltage up to 400 V • High repetition rate • Compact design • Output Specifications: - Signal voltage1)2): 70 - 420 V - Rise-/falltime (10 - 90%)3): < 15 ns, typ. 10 ns - Repetition rate4): 2 to 20 MHz (depends on signal voltage) - Offset-voltage 1) 2): 0 - 400 V • Input Specifications: - Impedance5): pulse 50 / 600 Ω / mod. 600 Ω - Low state: 0 V to + 0.4 V - High state: 2.4 V to + 5.5 V - Trigger threshold: + 1.5 V - Minimum pulse width : > 30 ns - Input-output delay, typ.: 50 ns - Input-output jitter: < 1 ns - Line Voltage: 230 / 115 V - Line Frequency: 50 / 60 Hz • Housing Specifications: - Dimensions (WxLxH) 260x330x155 mm - Weight: app. 9.5 kg - Power cord and connecting cable to Modulator included 1) Relative to ground This voltage can be set manually or externally with a control voltage 0 to + 10 V (input impendance 5 k) 3) Optical risetime achieved with a modulator LM 0202, connected with special cable (l = 80 cm) 4) Maximum signal voltage for 5 MHz operation is 200 V. maximum repetition rate for 400 V signal voltage is 2 MHz 5) Modulation allows gating of signal output 2) LIV 20-iso Product Order-No Digital Pulse Amplifier LIV 20-iso 84 50 2061 000 Sine-Amplifier for Phase Modulators • Compact design • Can be used with PM-C-BB, PM25, LM13 and LM0202 • Large modulation bandwidth • High output voltage • Cost effective • Modulator cable and adapters included • Power-supply included (on request with snap-in multi-plug) • Input waveform: SINE-Wave • Input voltage: max. +13dBm • Bandwidth with LM0202 : appr. 4-7 MHz • Bandwidth with PM-C-BB: appr. 5-12 MHz • Max. Output Voltage with LM0202 appr. 200 V @ 5-7 MHz frequency • Max. Output Voltage with PM-C-BB appr. 500 V @ 8-12 MHz frequency • Supply-Voltage (Power-Supply incl.): +12V DC • Dimensions: 115x65x70 mm Sine-Amplifier Product Order-No Sine-Amplifier for Phase Modulators 84 51 8000 0014 47 LINOS Laser Modulators Phase Modulator PM 25 • Two crystals at Brewster angle in order of compensation • With Brewster windows • Very high transmission • Connectors: 4 mm banana plugs • Different versions for wavelength ranges between 250 and 1100 nm • • • • • • Wavefront distortion < λ/10 at 633 nm Bandwidth (3 dB) 100 MHz Capacitance 30 pF Max. continuous voltage 1500 V Operating temperature 10 - 45°C Weight approx. 500 g • Please specify the wavelength or wavelength range and laser parameters when ordering. 48 Phase Modulator PM 25 Product Wavelengths (nm) Power capability (W) Transmission (%) Aperture (mm) λ/10-voltage at 633 nm (V) Order-No PM ADP 400-650 100 W (> 400 nm), 10 W (< 400 nm) > 98 5x5 200 ±10% 84 50 2030 000 PM KD*P 250-1100 100 W (> 400 nm), 10 W (< 400 nm) > 98 5x5 200 ±10% 84 50 2031 000 Subject to technical changes LINOS Laser Modulators Phase Modulator PM-C-BB • • • • • • • • • Brewster-cut MgO-LiNbO3 crystal High photorefractive damage threshold Broad wavelength range 450 ± 3000 nm High transmission Compact design Small residual amplitude modulation Connector: 1 x SMA Wavefront distortion < λ/4 at 633 nm Bandwidth DC-500 MHz (> 10 MHz resonance-free) 49 Phase Modulator PM-C-BB Product Wavelength (nm) Power capability at 1064 nm1) Transmission2) Aperture (Clear Apertur) λ/10-Voltage at 1064 nm Order-No PM-C-BB 450-3000 > 100 W / mm2 > 98% (680 - 2000 nm) 1.9 mm (1.5 mm) 100 V ± 10% 84 51 2090 0006 PM-C-BB (T)3) 450-3000 > 100 W / mm2 > 98% (680 - 2000 nm) 1.9 mm (1.5 mm) 100 V ± 10% Adapter plate for 1" mirror mount 1) 2) 3) CW operation, depends on wavelength excluded: LiNbO3 absorption at 2.82 - 2.84 μm with built-in active temperature stabilization (< 10 mK) 84 51 2090 0007 84 51 2090 0008 Subject to technical changes LINOS Laser Modulators Laser Modulators LM 13 • Different versions: Universal modulator, Intensity modulator (P) with thin film polarizer, Phase modulator (PHAS) • With 2 crystals in order of compensation • Connectors: 4 mm banana plugs • Different versions for wavelength ranges between 250 and 1100 nm • • • • • • • Extinction1) > 250:1 (VIS, IR) or > 100:1 (UV) Wavefront distortion < λ /4 at 633 nm Bandwidth (3 dB) 100 MHz Capacitance 46 pF Max. continuous voltage 800 V Operating temperature 10 - 45°C Weight approx. 500 g 50 1) Extinction: measured at continuous wave between crossed polarizers. Please specify the wavelength or wavelength range and laser parameters when ordering. LM 13 (P) (PHAS) LM 13 UV KD*P 2) Product Wavelengths (nm) Power capability (W) Transmission2) (%) Aperture (mm) λ/2-voltage at 355 nm (V) Order-No LM 13 250-310 0.1 > 91 / 88 Ø 1.5 240 ± 10% 84 50 2020 020 LM 13 250-310 0.1 > 91 / 88 Ø 3.5 390 ± 10% 84 50 2021 020 LM 13 300-390 1.0 > 95 / 92 Ø 1.5 240 ± 10% 84 50 2023 019 LM 13 300-390 1.0 > 95 / 92 Ø 3.5 390 ± 10% 84 50 2024 019 LM 13 P 250-310 0.1 > 91 / 88 Ø 1.5 240 ± 10% 84 50 2026 020 LM 13 P 250-310 0.1 > 91 / 88 Ø 3.5 390 ± 10% 84 50 2027 020 LM 13 P 300-390 1.0 > 95 / 92 Ø 1.5 240 ± 10% 84 50 2029 019 LM 13 P 300-390 1.0 > 95 / 92 Ø 3.5 390 ± 10% 84 50 2030 019 LM 13 PHAS 250-310 0.1 > 91 / 88 Ø 1.5 240 ± 10% 84 50 2032 020 LM 13 PHAS 250-310 0.1 > 91 / 88 Ø 3.5 390 ± 10% 84 50 2033 020 LM 13 PHAS 300-390 1.0 > 95 / 92 Ø 1.5 240 ± 10% 84 50 2035 019 LM 13 PHAS 300-390 1.0 > 95 / 92 Ø 3.5 390 ± 10% Transmission: measured without / with polarizing beamsplitter cube. 84 50 2036 019 Subject to technical changes LINOS Laser Modulators StandardPlus Modulators series LM 13 are also available with the crystal LiTaO3 as universal or intensity modulator. LM 13 VIS KD*P 2) Product Wavelengths (nm) Power capability (W) Transmission2) (%) Aperture (mm) λ/2-voltage at 633 nm (V) Order-No LM 13 400-850 0.1 > 98 / 95 3x3 420 ± 10% 84 50 2020 000 LM 13 400-850 0.1 > 98 / 95 5x5 700 ± 10% 84 50 2021 000 LM 13 400-850 5.0 > 95 / 92 3x3 420 ± 10% 84 50 2023 000 LM 13 400-850 5.0 > 95 / 92 5x5 700 ± 10% 84 50 2024 000 LM 13 P 400-850 0.1 > 98 / 95 3x3 420 ± 10% 84 50 2026 000 LM 13 P 400-850 0.1 > 98 / 95 5x5 700 ± 10% 84 50 2027 000 LM 13 P 400-850 5.0 > 95 / 92 3x3 420 ± 10% 84 50 2029 000 LM 13 P 400-850 5.0 > 95 / 92 5x5 700 ± 10% 84 50 2030 010 LM 13 PHAS 400-850 0.1 > 98 / 95 3x3 420 ± 10% 84 50 2032 000 LM 13 PHAS 400-850 0.1 > 98 / 95 5x5 700 ± 10% 84 50 2033 000 LM 13 PHAS 400-850 5.0 > 95 / 92 3x3 420 ± 10% 84 50 2035 000 LM 13 PHAS 400-850 5.0 > 95 / 92 5x5 700 ± 10% Transmission: measured without / with polarizing beamsplitter cube. 84 50 2036 000 Subject to technical changes LM 13 IR KD*P Product 2) Wavelengths (nm) Power capability (W) Transmission2) (%) Aperture (mm) λ/2-voltage at 1064 nm (V) Order-No LM 13 650-1000 5.0 > 95 / 92 3x3 710 ± 10% 84 50 2023 015 LM 13 950-1100 5.0 > 94 / 91 3x3 710 ± 10% 84 50 2023 016 LM 13 P 650-1000 5.0 > 95 / 92 3x3 710 ± 10% 84 50 2029 015 LM 13 P 950-1100 5.0 > 94 / 91 3x3 710 ± 10% 84 50 2029 016 LM 13 PHAS 650-1000 5.0 > 95 / 92 3x3 710 ± 10% 84 50 2035 015 LM 13 PHAS 650-1000 5.0 > 95 / 92 5x5 1180 ± 10% 84 50 2036 015 LM 13 PHAS 950-1100 5.0 > 94 / 91 3x3 710 ± 10% 84 50 2035 016 LM 13 PHAS 950-1100 5.0 > 94 / 91 5x5 1180 ± 10% Transmission: measured without / with polarizing beamsplitter cube. 84 50 2036 016 Subject to technical changes LM 13 IR KD*P High Power 2) Product Wavelengths (nm) Power capability (W) Transmission2) (%) Aperture (mm) λ/2-voltage at 1064 nm (V) Order-No LM 13 700-950 10 > 94 / 91 Ø1.0 710 ± 10% 84 50 2023 017 LM 13 950-1100 20 > 93 / 90 Ø1.0 710 ± 10% 84 50 2023 018 LM 13 P 700-950 10 > 94 / 91 Ø1.0 710 ± 10% 84 50 2029 017 LM 13 P 950-1100 20 > 93 / 90 Ø1.0 710 ± 10% 84 50 2029 018 LM 13 PHAS 700-950 10 > 94 / 91 Ø1.0 710 ± 10% 84 50 2035 017 LM 13 PHAS 700-950 10 > 94 / 91 Ø3.0 1180 ± 10% 84 50 2036 017 LM 13 PHAS 950-1100 20 > 93 / 90 Ø1.0 710 ± 10% 84 50 2035 018 LM 13 PHAS 950-1100 20 > 93 / 90 Ø3.0 1180 ± 10% Transmission: measured without / with polarizing beamsplitter cube 84 50 2036 018 Subject to technical changes 51 LINOS Laser Modulators Laser Modulators LM 0202 • Different versions: Universal modulator, Intensity modulator (P) with thin film polarizer, Phase modulator (PHAS) • With 4 crystals in order of compensation • Connectors: 4 mm banana plugs • Different versions for wavelength ranges between 250 and 1100 nm LM 0202 (P) (PHAS) • • • • • • • Extinction1) > 250:1 (VIS, IR) or > 100:1 (UV) Wavefront distortion < λ/4 at 633 nm Bandwidth (3 dB) 100 MHz Capacitance 82 pF Max. continuous voltage 800 V Operating temperature 10 - 45°C Weight approx. 800 g 1) Extinction: measured at continuous wave between crossed polarizers. Please specify the wavelength or wavelength range and laser parameters when ordering. StandardPlus Modulators series LM 0202 are also available with the crystal LiTaO3 - as universal or intensity modulator. 52 LM 0202 UV KD*P 1) Product Wavelengths (nm) Power capability (W) Transmission1) (%) Aperture (mm) λ/2-voltage (355 nm) (V) Order-No LM 0202 250-310 0.1 > 88 / 85 Ø 1.5 120 ± 10% 84 50 2040 003 LM 0202 250-310 0.1 > 88 / 85 Ø 3.5 200 ± 10% 84 50 2041 003 LM 0202 300-390 1 > 93 / 90 Ø 1.5 120 ± 10% 84 50 2049 007 LM 0202 300-390 1 > 93 / 90 Ø 3.5 200 ± 10% 84 50 2050 011 LM 0202 P 250-310 0.1 > 88 / 85 Ø 1.5 120 ± 10% 84 50 2043 003 LM 0202 P 250-310 0.1 > 88 / 85 Ø 3.5 200 ± 10% 84 50 2044 004 LM 0202 P 300-390 1 > 93 / 90 Ø 1.5 120 ± 10% 84 50 2052 013 LM 0202 P 300-390 1 > 93 / 90 Ø 3.5 200 ± 10% 84 50 2053 006 LM 0202 PHAS 250-310 0.1 > 88 / 85 Ø 1.5 120 ± 10% 84 50 2046 004 LM 0202 PHAS 250-310 0.1 > 88 / 85 Ø 3.5 200 ± 10% 84 50 2047 004 LM 0202 PHAS 300-390 1 > 93 / 90 Ø 1.5 120 ± 10% 84 50 2055 010 LM 0202 PHAS 300-390 1 > 93 / 90 Ø 3.5 200 ± 10% 84 50 2056 006 Subject to technical changes Transmission: measured without / with polarizing beamsplitter cube LM 0202 VIS ADP 1) Product Wavelengths (nm) Power capability (W) Transmission1) (%) Aperture (mm) λ/2-voltage (633 nm) (V) Order-No LM 0202 400-650 0.1 > 97 / 94 3x3 210 ± 10% 84 50 2001 000 LM 0202 400-650 0.1 > 97 / 94 5x5 350 ± 10% 84 50 2002 000 LM 0202 400-650 5.0 > 92 / 89 3x3 210 ± 10% 84 50 2010 000 LM 0202 400-650 5.0 > 92 / 89 5x5 350 ± 10% 84 50 2011 000 LM 0202 P 400-650 0.1 > 97 / 94 3x3 210 ± 10% 84 50 2004 000 LM 0202 P 400-650 0.1 > 97 / 94 5x5 350 ± 10% 84 50 2005 000 LM 0202 P 400-650 5.0 > 92 / 89 3x3 210 ± 10% 84 50 2013 000 LM 0202 P 400-650 5.0 > 92 / 89 5x5 350 ± 10% 84 50 2014 000 LM 0202 PHAS 400-650 0.1 > 97 / 94 3x3 210 ± 10% 84 50 2007 000 LM 0202 PHAS 400-650 0.1 > 97 / 94 5x5 350 ± 10% 84 50 2008 000 LM 0202 PHAS 400-650 5.0 > 92 / 89 3x3 210 ± 10% 84 50 2016 000 LM 0202 PHAS 400-650 5.0 > 92 / 89 5x5 350 ± 10% Transmission: measured without / with polarizing beamsplitter cube 84 50 2017 000 Subject to technical changes LINOS Laser Modulators LM 0202 VIS KD*P Product 1) Wavelengths (nm) Power capability (W) Transmission1) (%) Aperture (mm) λ/2-voltage (633 nm) (V) Order-No LM 0202 400-850 0.1 > 97 / 94 3x3 210 ± 10% 84 50 2040 000 LM 0202 400-850 0.1 > 97 / 94 5x5 350 ± 10% 84 50 2041 000 LM 0202 400-850 5.0 > 92 / 89 3x3 210 ± 10% 84 50 2049 000 LM 0202 400-850 5.0 > 92 / 89 5x5 350 ± 10% 84 50 2050 005 LM 0202 P 400-850 0.1 > 97 / 94 3x3 210 ± 10% 84 50 2043 000 LM 0202 P 400-850 0.1 > 97 / 94 5x5 350 ± 10% 84 50 2044 000 LM 0202 P 400-850 5.0 > 92 / 89 3x3 210 ± 10% 84 50 2052 000 LM 0202 P 400-850 5.0 > 92 / 89 5x5 350 ± 10% 84 50 2053 000 LM 0202 PHAS 400-850 0.1 > 97 / 94 3x3 210 ± 10% 84 50 2046 000 LM 0202 PHAS 400-850 0.1 > 97 / 94 5x5 350 ± 10% 84 50 2047 000 LM 0202 PHAS 400-850 5.0 > 92 / 89 3x3 210 ± 10% 84 50 2055 000 LM 0202 PHAS 400-850 5.0 > 92 / 89 5x5 350 ± 10% 84 50 2056 000 Transmission: measured without / with polarizing beamsplitter cube Subject to technical changes 53 LM 0202 IR KD*P 1) Product Wavelengths (nm) Power capability (W) Transmission1) (%) Aperture (mm) λ/2-voltage (1064 nm) (V) Order-No LM 0202 650-1000 5.0 > 92 / 89 3x3 360 ± 10% 84 50 2049 001 LM 0202 650-1000 5.0 > 92 / 89 5x5 590 ± 10% 84 50 2050 006 LM 0202 950-1100 5.0 > 90 / 87 3x3 360 ± 10% 84 50 2049 004 LM 0202 950-1100 5.0 > 90 / 87 5x5 590 ± 10% 84 50 2050 007 LM 0202 P 650-1000 5.0 > 92 / 89 3x3 360 ± 10% 84 50 2052 001 LM 0202 P 650-1000 5.0 > 92 / 89 5x5 590 ± 10% 84 50 2053 001 LM 0202 P 950-1100 5.0 > 90 / 87 3x3 360 ± 10% 84 50 2052 004 LM 0202 P 950-1100 5.0 > 90 / 87 5x5 590 ± 10% 84 50 2053 002 LM 0202 PHAS 650-1000 5.0 > 92 / 89 3x3 360 ± 10% 84 50 2055 006 LM 0202 PHAS 650-1000 5.0 > 92 / 89 5x5 590 ± 10% 84 50 2056 001 LM 0202 PHAS 950-1100 5.0 > 90 / 87 3x3 360 ± 10% 84 50 2055 001 LM 0202 PHAS 950-1100 5.0 > 90 / 87 5x5 590 ± 10% Transmission: measured without / with polarizing beamsplitter cube 84 50 2056 002 Subject to technical changes LM 0202 IR KD*P High Power 1) Product Wavelengths (nm) Power capability (W) Transmission1) (%) Aperture (mm) λ/2-voltage (1064 nm) (V) Order-No LM 0202 700-950 10 > 91 / 88 Ø 1.0 360 ± 10% 84 50 2049 006 LM 0202 700-950 10 > 91 / 88 Ø 3.0 590 ± 10% 84 50 2050 010 LM 0202 950-1100 20 > 89 / 86 Ø 1.0 360 ± 10% 84 50 2049 005 LM 0202 950-1100 20 > 89 / 86 Ø 3.0 590 ± 10% 84 50 2050 008 LM 0202 P 700-950 10 > 91 / 88 Ø 1.0 360 ± 10% 84 50 2052 012 LM 0202 P 700-950 10 > 91 / 88 Ø 3.0 590 ± 10% 84 50 2053 005 LM 0202 P 950-1100 20 > 89 / 86 Ø 1.0 360 ± 10% 84 50 2052 011 LM 0202 P 950-1100 20 > 89 / 86 Ø 3.0 590 ± 10% 84 50 2053 003 LM 0202 PHAS 700-950 10 > 91 / 88 Ø 1.0 360 ± 10% 84 50 2055 009 LM 0202 PHAS 700-950 10 > 91 / 88 Ø 3.0 590 ± 10% 84 50 2056 005 LM 0202 PHAS 950-1100 20 > 89 / 86 Ø 1.0 360 ± 10% 84 50 2055 008 LM 0202 PHAS 950-1100 20 > 89 / 86 Ø 3.0 590 ± 10% 84 50 2056 004 Transmission: measured without / with polarizing beamsplitter cube Subject to technical changes Laser Modulators Laser Modulators - Questionnaire QIOPTIQ Photonics GmbH & Co. KG Crystal Technology Hans-Riedl-Straße 9 85622 Feldkirchen Germany Phone Fax E-mail Internet 54 +49(0)89 255 458-100 +49(0)89 255 458-895 laser@qioptiq.de www.qioptiq.com • Full Name: _____________________________________________ • Company Name: ________________________________________ • Address: _______________________________________________ • Zip Code: ______________________________________________ • Country: _______________________________________________ • Phone: ________________________________________________ • Fax: ___________________________________________________ • City: __________________________________________________ 1. Laser Pulse Parameter at Location of Modulator 1.1 Wavelength [nm] ____________________________________________________________________________________________________ 1.2 Continuous-Wave Laser Power [W] _____________________________________________________________________________________ 1.3 Beam Diameter, 1/e2 [mm] ____________________________________________________________________________________________ 1.4 Laser Pulse Energy ___________________________________________________________________________________________________ 1.5 Laser Pulse Duration [ns] ______________________________________________________________________________________________ 1.6 Repetition Rate [MHz] ________________________________________________________________________________________________ 2. Type of Modulator 2.1 Hard Aperture [mm] _________________________________________________________________________________________________ 2.2 Transmission [%] ____________________________________________________________________________________________________ 2.3 Maximum Extinction [1:x] _____________________________________________________________________________________________ 2.4 Crystal [KD*P, ADP] __________________________________________________________________________________________________ 2.5 Number of crystals (2 or 4) _____________________________________________________________________________________________ 2.6 Universal-, Intensity-, Phase-Modulator __________________________________________________________________________________ 3. If a driver (Amplifier) is required... 3.1 Digital- or Analog-Amplifier ___________________________________________________________________________________________ 3.2 Switching Voltage [V] _________________________________________________________________________________________________ 3.3 Rise-/Fall-Time [ns] ___________________________________________________________________________________________________ 3.4 Duration [ns] _______________________________________________________________________________________________________ 3.1 Repetition Rate [MHz] ________________________________________________________________________________________________ 4. Estimate Number of Units 4.1 Year [No. of Units] Target Price/Unit ____________________________________________________________________________________ 5. Comments / Remarks: ______________________________________________________________________________________________________________________ ______________________________________________________________________________________________________________________ ______________________________________________________________________________________________________________________ … coming soon … Laser Power Stabilization Series • Operation modes: - Modulation: (no stabilization) up to 2 kHz - Setpoint: Stabilization to preset transmission value - Autolock: Stabilization to maximum possible transmission value • Optical output stability < 0.1% (1h) • Large stabilization bandwidth DC – 300 kHz • Optional wireless photodiode for external stabilization • USB interface Compact two stage Faraday Isolator Series High isolation (> 60dB) and high transmission at further reduced size for space critical applications FI-780-5 TVC Outer dimensions: FI-780-TV: 40 x 40 x 106 mm New TVC verion: 40 x 40 x 78 mm FI-920-5 TIC Outer dimensions FI-920-TI: 58 x 58 x 131 mm New TIC version: 45 x 45 x 90 mm Other wavelengths available upon request 55 Discover the Q! 56 Qioptiq supplies cutting edge technology for all optical requirements of Industrial Manufacturing. Worldwide production capacities and state-of-theart manufacturing plants guarantee an impressive portfolio of photonic products and solutions. Join us on a journey of discovery in our Crystal Technology brochure! Photonics for Innovation For technical information contact: Qioptiq www.qioptiq.com photonics@qioptiq.com