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GaN HEMT

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AD-009
AD-009: Nitronex NPTB00004 GaN HEMT
Tuned for 2.5 to 2.7GHz Driver Applications
Application board AD-009 with a Nitronex NPTB00004 GaN HEMT device outputs
approximately 29dBm of average RF power under single carrier OFDM (WiMAX)
modulation1 and approximately 12.5dB gain with 22% drain efficiency at 2.5% EVM
(IDQ=50mA). All measurements were collected at 2.5 – 2.7GHz with a drain bias of
VDS=+28.0V.
Caution: Do not operate the device with greater than 36 volts of drain-source
potential and IDQ >150mA. Drain current can exceed 150ma under RF drive.
Note, the gate bias is negative and is fully pinched off at approximately –1.8V.
Caution: Do not exceed 5 dB of gain compression with a single tone signal or expose
the device to a strong reversal of the gate leakage current – from negative to positive.
Note: Device saturation is reached when the polarity of the gate current turns positive, a
small positive gate current of +3 ma will not harm the device but once the current turns
positive it will grow exponentially with additional RF driver level. Maximum Pin should
not exceed 20 dBm.
Biasing sequence: GaN HEMTs are depletion mode devices, therefore
set the gate voltage to –2.0V, bring drain voltage up to 28VDC, adjust gate
to obtain desired IDQ, and then enable RF. Turn off device in the reverse
sequence
1
64 QAM ¾, 8 burst, 10 MHz, 10.3 dB PAR @ 0.01% CCDF , full data frame
APB07-212
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AD-009
AD-009 NPTB00004 Application Board Layout / BOM
s
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A
Name
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
C11
C12
C13
C14
C15
C16
J1
J2
J3
Q1
R1
R3
R4
R5
MD-0001
nbd-012_rev1
C
Value
10uF
1uF
0.1uF
0.01uF
0.001F
33pF
100uF
1uF
0.1uF
0.01uF
0.001F
33pF
2.7pF
10pF
0.8pF
3.3pF
200 ohm
0 ohm
0.033 ohm
0 ohm
APB07-212
E
Description
CAP TANTALUM 10UF 16V 20% SMD
CAP CERM 1.0UF 10% 100V X7R 1210
CAP CER .1UF 100V X7R 0603
CAP CER .01UF 10% 100V X7R 0603
CAP CER 1000PF 10% 100V X7R 0603
CAP CER 33pF 0805
CAP 100UF 63V ELECT VS SMD
CAP CERM 1.0UF 10% 100V X7R 1210
CAP CER .1UF 100V X7R 0603
CAP CER .01UF 10% 100V X7R 0603
CAP CER 1000PF 10% 100V X7R 0603
CAP CER 33pF 0805
CAP CER 2.7pF 0805
CAP CER 10pF 0805
CAP CER 0.8pF 0805
CAP CER 3.3pF 0805
CONN HEADER 3POS .100" R/A TIN
SMA Jack 2-Hole Flange
SMA Jack 2-Hole Flange
Nitronex
RES 200 OHM 1/16W 1% 0402 SMD
RES ZERO OHM 1/16W 5% 0402 SMD
RES 0.033 OHM 1/16W 5% 0402 SMD
RES ZERO OHM 1/16W 5% 0402 SMD
Heat Sink Base with aavshield Al Plating
PCB
F
Vendor
AVX
AVX
Murata
AVX
AVX
ATC
Panasonic
AVX
Murata
AVX
AVX
ATC
ATC
ATC
ATC
ATC
Molex
Amphenol Connex
Amphenol Connex
Nitronex
Panasonic
Panasonic
Panasonic
Panasonic
Aavid
-
G
Vendor Number
TAJA106M016R
12101C105KAT2A
GRM188R72A104KA35D
06031C103KAT2A
06031C102KAT2A
ATC600F330B
ECE-V1JA101P
12101C105KAT2A
GRM188R72A104KA35D
06031C103KAT2A
06031C102KAT2A
ATC600F330B
ATC600F2R7B
ATC600F100B
ATC600F0R8B
ATC600F3R3B
90121-0123
132262
132262
NPTB00004
ERJ-2GEJ201X
ERJ-2GE0R00X
ERJ-6BWJR033W
ERJ-2GE0R00X
Extrusion#: 64690
nbd-012_rev1
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AD-009
AD-009 NPTB00004 WiMax Data
AD-009: WiMax Performance of the NPTB00004 at 2.5GHz
40
35
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10
5
0
4
Gain (dB)
DE (%)
3
EVM (%)
2
EVM (%)
Gain (dB), Drain
Efficiency (%)
(Vds: 28V, Idq: 50mA)
1
0
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30
32
Pout (dBm)
AD-009: WiMax Performance of the NPTB00004 at 2.6GHz
40
35
30
25
20
15
10
5
0
4
Gain (dB)
DE (%)
3
EVM (%)
2
EVM (%)
Gain (dB), Drain
Efficiency (%)
(Vds: 28V, Idq: 50mA)
1
0
16
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30
32
Pout (dBm)
AD-009: WiMax Performance of the NPTB00004 at 2.7GHz
40
35
30
25
20
15
10
5
0
4
Gain (dB)
DE (%)
3
EVM (%)
2
EVM (%)
Gain (dB), Drain
Efficiency (%)
(Vds: 28V, Idq: 50mA)
1
0
14
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20
22
24
26
28
30
32
Pout (dBm)
APB07-212
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