AD-009 AD-009: Nitronex NPTB00004 GaN HEMT Tuned for 2.5 to 2.7GHz Driver Applications Application board AD-009 with a Nitronex NPTB00004 GaN HEMT device outputs approximately 29dBm of average RF power under single carrier OFDM (WiMAX) modulation1 and approximately 12.5dB gain with 22% drain efficiency at 2.5% EVM (IDQ=50mA). All measurements were collected at 2.5 – 2.7GHz with a drain bias of VDS=+28.0V. Caution: Do not operate the device with greater than 36 volts of drain-source potential and IDQ >150mA. Drain current can exceed 150ma under RF drive. Note, the gate bias is negative and is fully pinched off at approximately –1.8V. Caution: Do not exceed 5 dB of gain compression with a single tone signal or expose the device to a strong reversal of the gate leakage current – from negative to positive. Note: Device saturation is reached when the polarity of the gate current turns positive, a small positive gate current of +3 ma will not harm the device but once the current turns positive it will grow exponentially with additional RF driver level. Maximum Pin should not exceed 20 dBm. Biasing sequence: GaN HEMTs are depletion mode devices, therefore set the gate voltage to –2.0V, bring drain voltage up to 28VDC, adjust gate to obtain desired IDQ, and then enable RF. Turn off device in the reverse sequence 1 64 QAM ¾, 8 burst, 10 MHz, 10.3 dB PAR @ 0.01% CCDF , full data frame APB07-212 1 of 3 AD-009 AD-009 NPTB00004 Application Board Layout / BOM s 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 A Name C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 C13 C14 C15 C16 J1 J2 J3 Q1 R1 R3 R4 R5 MD-0001 nbd-012_rev1 C Value 10uF 1uF 0.1uF 0.01uF 0.001F 33pF 100uF 1uF 0.1uF 0.01uF 0.001F 33pF 2.7pF 10pF 0.8pF 3.3pF 200 ohm 0 ohm 0.033 ohm 0 ohm APB07-212 E Description CAP TANTALUM 10UF 16V 20% SMD CAP CERM 1.0UF 10% 100V X7R 1210 CAP CER .1UF 100V X7R 0603 CAP CER .01UF 10% 100V X7R 0603 CAP CER 1000PF 10% 100V X7R 0603 CAP CER 33pF 0805 CAP 100UF 63V ELECT VS SMD CAP CERM 1.0UF 10% 100V X7R 1210 CAP CER .1UF 100V X7R 0603 CAP CER .01UF 10% 100V X7R 0603 CAP CER 1000PF 10% 100V X7R 0603 CAP CER 33pF 0805 CAP CER 2.7pF 0805 CAP CER 10pF 0805 CAP CER 0.8pF 0805 CAP CER 3.3pF 0805 CONN HEADER 3POS .100" R/A TIN SMA Jack 2-Hole Flange SMA Jack 2-Hole Flange Nitronex RES 200 OHM 1/16W 1% 0402 SMD RES ZERO OHM 1/16W 5% 0402 SMD RES 0.033 OHM 1/16W 5% 0402 SMD RES ZERO OHM 1/16W 5% 0402 SMD Heat Sink Base with aavshield Al Plating PCB F Vendor AVX AVX Murata AVX AVX ATC Panasonic AVX Murata AVX AVX ATC ATC ATC ATC ATC Molex Amphenol Connex Amphenol Connex Nitronex Panasonic Panasonic Panasonic Panasonic Aavid - G Vendor Number TAJA106M016R 12101C105KAT2A GRM188R72A104KA35D 06031C103KAT2A 06031C102KAT2A ATC600F330B ECE-V1JA101P 12101C105KAT2A GRM188R72A104KA35D 06031C103KAT2A 06031C102KAT2A ATC600F330B ATC600F2R7B ATC600F100B ATC600F0R8B ATC600F3R3B 90121-0123 132262 132262 NPTB00004 ERJ-2GEJ201X ERJ-2GE0R00X ERJ-6BWJR033W ERJ-2GE0R00X Extrusion#: 64690 nbd-012_rev1 2 of 3 AD-009 AD-009 NPTB00004 WiMax Data AD-009: WiMax Performance of the NPTB00004 at 2.5GHz 40 35 30 25 20 15 10 5 0 4 Gain (dB) DE (%) 3 EVM (%) 2 EVM (%) Gain (dB), Drain Efficiency (%) (Vds: 28V, Idq: 50mA) 1 0 18 20 22 24 26 28 30 32 Pout (dBm) AD-009: WiMax Performance of the NPTB00004 at 2.6GHz 40 35 30 25 20 15 10 5 0 4 Gain (dB) DE (%) 3 EVM (%) 2 EVM (%) Gain (dB), Drain Efficiency (%) (Vds: 28V, Idq: 50mA) 1 0 16 18 20 22 24 26 28 30 32 Pout (dBm) AD-009: WiMax Performance of the NPTB00004 at 2.7GHz 40 35 30 25 20 15 10 5 0 4 Gain (dB) DE (%) 3 EVM (%) 2 EVM (%) Gain (dB), Drain Efficiency (%) (Vds: 28V, Idq: 50mA) 1 0 14 16 18 20 22 24 26 28 30 32 Pout (dBm) APB07-212 3 of 3